CN102790513A - 电源模块和电源模块的封装方法 - Google Patents

电源模块和电源模块的封装方法 Download PDF

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Publication number
CN102790513A
CN102790513A CN201210268316XA CN201210268316A CN102790513A CN 102790513 A CN102790513 A CN 102790513A CN 201210268316X A CN201210268316X A CN 201210268316XA CN 201210268316 A CN201210268316 A CN 201210268316A CN 102790513 A CN102790513 A CN 102790513A
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Prior art keywords
electric winding
lead frame
electrically connected
bare chip
semiconductor bare
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CN201210268316XA
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CN102790513B (zh
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段志华
侯召政
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Priority to CN201210268316.XA priority Critical patent/CN102790513B/zh
Publication of CN102790513A publication Critical patent/CN102790513A/zh
Priority to EP13824822.4A priority patent/EP2802064B1/en
Priority to ES16184829T priority patent/ES2836188T3/es
Priority to EP16184829.6A priority patent/EP3174185B1/en
Priority to ES13824822.4T priority patent/ES2613004T3/es
Priority to PCT/CN2013/073950 priority patent/WO2014019384A1/zh
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Publication of CN102790513B publication Critical patent/CN102790513B/zh
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Abstract

本发明提供一种电源模块和电源模块的封装方法。其中，该电源模块包括引线框架、集成电路、无源器件和至少一个半导体裸芯片，所述无源器件中的至少一个磁性器件为通过磁芯和电气绕组组装成的分离式磁性器件；所述电气绕组的一端与所述引线框架电连接，以使所述电气绕组的一端通过所述引线框架与所述集成电路和除磁性器件之外的无源器件电连接；所述电气绕组的另一端直接与所述半导体裸芯片电连接。本发明降低了电源模块中绕线磁性器件的失效概率，提高了电源模块的可靠性。

Description

电源模块和电源模块的封装方法
技术领域
本发明实施例涉及电子技术，尤其涉及一种电源模块和电源模块的封装方法。
背景技术
电源模块的主要元件包括功率开关、集成电路（Integrated circuit，简称IC）和无源器件。其中，无源器件包括磁性器件、电阻和电容。磁性器件可以是电感。功率开关常用的是金属氧化物半导体场效应晶体管（MOSFETMetallic Oxide Semiconductor Field Effect Transistor，简称MOSFET）或绝缘栅极型晶体管（Insulated Gate Bipolar Transistor，简称IGBT），IC可以是驱动芯片或PWM控制芯片，或两者的组合。目前，电源厂商和半导体厂商在电源模块方面的封装集成方案多采用集成MOSFET、IC、无源器件的结构，PCB或其他引线框架，采用金丝或铜丝键合的互连方式，MOSFET作为开关，受IC控制或驱动，完成对输入电源的脉宽调制，经过电感、电容滤波、输出负载需要的电压。
目前，电源模块中的磁性器件通常为贴片式磁性器件、或包含磁芯材料的绕线磁性器件。贴片式磁性器件的电感值较小，无法满足功率密度和电源效率的需求，电源模块的可靠性降低。包含磁芯材料的绕线磁性器件的电感值较大，但电源模块中采用的是已封装好的绕线磁性器件，焊点开裂风险较大，失效概率较高，可靠性较低。
发明内容
本发明实施例提供一种电源模块和电源模块的封装方法，用于降低电源模块中绕线磁性器件的失效概率，提高电源模块的可靠性。
一方面，本发明实施例提供一种电源模块，包括：
引线框架、集成电路、无源器件和至少一个半导体裸芯片；
所述无源器件中的至少一个磁性器件为通过磁芯和电气绕组组装成的分离式磁性器件；
所述电气绕组的一端与所述引线框架电连接，所述电气绕组的一端通过所述引线框架与所述集成电路和除所有磁性器件之外的无源器件电连接；所述电气绕组的另一端直接与所述半导体裸芯片电连接。
另一方面，本发明实施例还提供一种电源模块的封装方法，包括：
将至少一个半导体裸芯片和除磁性器件之外的无源器件以及集成电路贴装在引线框架上；
将通过磁芯和电气绕组组装成的分离式磁性器件，贴装在所述引线框架上；
将所述电气绕组的一端与所述引线框架电连接，将所述电气绕组的另一端直接与所述半导体裸芯片电连接；
对贴装有元件的引线框架进行塑封后，切割成单个电源模块。
本发明实施例提供的技术方案中，电源模块中的至少一个磁性器件为在封装电源模块过程中通过磁芯和电气绕组组装而成的分离式磁性器件，不是单独封装好的封装式磁性器件。该分离式磁性器件的电气绕组的一端直接与半导体裸芯片电连接，不需要通过引线框架与半导体裸芯片电连接，由于本发明实施例提供的电源模块中磁性器件为分离式磁性器件，减少了磁性器件与引线框架电连接的机械应力，提高了散热性能，降低了磁性器件的失效概率。同时该分离式磁性器件的电气绕组的一端直接与半导体裸芯片电连接，因而还减少了电源模块内部器件之间的连接线，降低了阻抗，提高了电源模块的效率。
附图说明
图1为本发明实施倒提供的一种电源模块结构示意图；
图2为本发明实施倒提供的另一种电源模块结构示意图；
图3为本发明实施例提供的一种电源模块的封装方法流程图；
图4为图3中步骤32的一种流程图。
具体实施方式
本发明实施例提供的电源模块包括引线框架、集成电路、无源器件和至少一个半导体裸芯片。其中，所述半导体裸芯片可以MOSFET，也可以是IGBT，或者为IGBT和MOSFET的组合。本发明实施例提供的电源模块可通过引线框架安装在PCB母板上。
上述无源器件中的至少一个磁性器件为包括磁芯和电气绕组的分离式磁性器件。本发明实施例提供的电源模块至少有一个分离式磁性器件，分离式磁性器件为在封装电源模块中通过磁芯和电气绕组组装而成的磁性器件，外部没有经过封装，不是单独封装好的磁性器件。上述电气绕组的材料可以是金，铝或铜等金属，可以具有任何适当的宽度和厚度。
上述分离式磁性器件的电气绕组的一端与引线框架电连接，以使上述电气绕组的一端通过引线框架与集成电路和除所有磁性器件之外的无源器件电连接。上述分离式磁性器件的电气绕组的另一端直接与半导体裸芯片电连接，不需要通过引线框架与半导体裸芯片电连接。
电气绕组与引线框架和半导体裸芯片的电连接，可以采用焊接，键合或导电胶粘接，不限于以上三种。优选地，电气绕组为铝带，电气绕组的一端采用键合方式或粘接方式与引线框架电连接，电气绕组的另一端采用键合方式或粘接方式直接与半导体裸芯片电连接。采用键合或粘接方式进行电连接，可减少电源模块内部器件之间的连接线、减少寄生参数、减小损耗，提高电源效率。
集成电路通过引线框架与半导体裸芯片和无源器件连接。
进一步，电源模块可包括两个半导体裸芯片，其中，一个半导体裸芯片的源极与另一个半导体裸芯片的栅极电连接；电气绕组的另一端直接与一个半导体裸芯片的源极电连接，电气绕组的另一端还直接与另一个半导体裸芯片的栅极电连接。
本实施例提供的电源模块中，至少有一个磁性器件为在封装电源模块过程中通过磁芯和电气绕组组装而成的分离式磁性器件，不是单独封装好的封装式磁性器件。该分离式磁性器件的电气绕组的一端直接与半导体裸芯片电连接，不需要通过引线框架与半导体裸芯片电连接，由于本发明实施例提供的电源模块中磁性器件为分离式磁性器件，减少了磁性器件与引线框架电连接的机械应力，提高了散热性能，降低了磁性器件的失效概率。同时该分离式磁性器件的电气绕组的一端直接与半导体裸芯片电连接，因而还减少了电源模块内部器件之间的连接线，降低了阻抗，提高了电源模块的效率。
图1为本发明实施倒提供的一种电源模块结构示意图。本实施例提供的电源模块中包括一个磁性器件，该磁性器件为通过两个半磁芯和电气绕组组装而成的分离式磁性器件。分离式磁性器件的磁芯包括两个对合设置的半磁芯，电气绕组设置在两个半磁芯对合的空间中。优选地，每个半磁芯的一面的中间设置有突出部分，例如突出圆柱，两个半磁芯通过中突部分对合设置。
如图1所示，本实施例中的分离式磁性器件包括半磁芯21、半磁芯22和电气绕组23。半磁芯21和半磁芯22的中间均设置有突出部分，半磁芯21和半磁芯22通过中突部分对合设置。电气绕组23设置在半磁芯21和半磁芯22对合的空间中，因此，电气绕组23被半磁芯21和半磁芯22包裹。电气绕组23的一端231与引线框架1电连接，也就是，电气绕组23的一端231通过引线框架1与集成电路5和除磁性器件之外的无源器件电连接。
如图1所示，电源模块中包括两个级联的半导体裸芯片，半导体裸芯片3的源极与半导体裸芯片4的栅极电连接。电气绕组23的另一端232直接与半导体裸芯片3和半导体裸芯片4电连接，也就是，电气绕组23的另一端直接与半导体裸芯片3的源极电连接，还直接与半导体裸芯片4的栅极电连接。半导体裸芯片3和半导体裸芯片4还通过引线框架与集成电路5电连接。
本实施例中的分离式磁性器件不是单独制作，而是在模块封装过程中组装而成，先在引线框架安装一个中间具有突出部分的半磁芯，半磁芯没有突出部分的一面设置在引线框架上，再将电气绕组铺设在半磁芯上。然后将电气绕组的一端与引线框架连接，另一端直接与半导体裸芯片电连接。之后再将另外一个半磁芯中间的中突部分对合在已安装好的半磁芯的突出部分上，将电气绕组的磁路闭合。
图2为本发明实施倒提供的另一种电源模块结构示意图。本实施例提供的电源模块中，分离式磁性器件通过一个磁芯和电气绕组装而成，电气绕组沿磁芯的外部盘绕。
如图2所示，磁芯61的外部盘绕有电气绕组62，盘绕有电气绕组62的磁芯组装成了分离式磁性器件。电气绕组62的一端621与引线框架1电连接，也就是，电气绕组62的一端621通过引线框架1与集成电路5和除磁性器件之外的无源器件电连接。
如图2所示，电源模块中包括两个级联的半导体裸芯片，半导体裸芯片3的源极与半导体裸芯片4的栅极电连接。电气绕组62的另一端622直接与半导体裸芯片3和半导体裸芯片4电连接，也就是，电气绕组62的另一端622直接与半导体裸芯片3的源极电连接，还直接与半导体裸芯片4的栅极电连接。其中，电气绕组62的另一端622连接半导体裸片的顶部，半导体裸芯片底部用焊锡与引线框架相连，并与磁芯61的底部电气绕组相连。
本实施例中的分离式磁性器件不是单独制作，而是在模块封装过程中组装而成。先将外部盘绕有电气绕组的磁芯安装在引线框架上，之后，将电气绕组露出的一端与引线框架连接，露出的另一端直接与半导体裸芯片电连接。
优选地，图1和图2对应实施例中，电气绕组可以是金属带状匝线，匝数可为单匝，可为多匝。电气绕组的匝数多匝时，各匝之间相互串联或并联，每匝的一端通过机械压合方式与引线框架电连接。
优选地，图1和图2对应实施例中，电气绕组为铝带，电气绕组的一端采用键合方式或粘接方式与引线框架电连接，电气绕组的另一端采用键合方式或粘接方式直接与半导体裸芯片电连接。
优选地，图1和图2对应实施例中，半导体裸芯片为垂直半导体器件。
在上述各个实施例中，引线框架可以是通过本领域已知的冲压工艺得到，也可以是采用蚀刻导电板得到的预定图形或结合冲压工艺和蚀刻工艺而得到。因此，本实施例中的引线框架结构可以是连续或者不连续的金属结构。引线框结构包含任何适当的材料，可以具有任何适当的形式和厚度,还包含引线框架上的金属镀层如银镀层，镍金镀层，镍钯金镀层等。示例性的引线框架本体材料包括铜，铝及其合金，铁镍合金等。引线框架最初是以通过系杆连接在一起的引线框架陈列中的许多单元中的一个。在制造半导体管芯封装的工艺期间，引线框架陈列可以被切割或者冲切使各个封装相互分离。此外，引线框架结构可以具有多个可形成管芯附联焊盘Die Attach Pad的管芯焊盘区（DAP）,引线可以与管芯附联焊盘DAP的表面共面或者不共面。
在上述各个实施例中，用于封装电源模块的封模材料可以包含适合适当的材料诸如多功能交联环氧树脂复合材料等。封模材料以固定料饼形态，在高温下软化成固液共存的胶体状态，通过转移注入模具与放置在模具中的引线框架结合成型，并发生交联反应后固化成型。
图3为本发明实施例提供的一种电源模块的封装方法流程图。本实施例提供的封装方法包括：
步骤31：将至少一个半导体裸芯片和除磁性器件之外的无源器件以及集成电路贴装在引线框架上。
步骤32：将通过磁芯和电气绕组组装成的分离式磁性器件，贴装在引线框架上。
分离式磁性器件为在封装电源模块中通过磁芯和电气绕组组装而成的磁性器件，外部没有经过封装，不是单独封装好的磁性器件。上述电气绕组的材料可以是金，铝或铜等金属，可以具有任何适当的宽度和厚度。
步骤33：将电气绕组的一端与引线框架电连接，将电气绕组的另一端直接与半导体裸芯片电连接。
上述分离式磁性器件的电气绕组的一端与引线框架电连接，以使上述电气绕组的一端通过引线框架与集成电路和除磁性器件之外的无源器件电连接。上述分离式磁性器件的电气绕组的另一端直接与半导体裸芯片电连接，不需要通过引线框架与半导体裸芯片电连接。
电气绕组与引线框架和半导体裸芯片的电连接，可以采用焊接，键合或导电胶粘接，不限于以上三种。优选地，电气绕组为铝带，电气绕组的一端采用键合方式或粘接方式与引线框架电连接，电气绕组的另一端采用键合方式或粘接方式直接与半导体裸芯片电连接。采用键合或粘接方式进行电连接，可减少电源模块内部器件之间的连接线、减少寄生参数、减小损耗，提高电源效率。
步骤34：对贴装有元件的引线框架进行塑封后，切割成单个电源模块。
优选地，电气绕组可以是金属带状匝线，匝数可为单匝，可为多匝。电气绕组的匝数多匝时，各匝之间相互串联或并联，每匝的一端通过机械压合方式与引线框架电连接。
优选地，半导体裸芯片为垂直半导体器件。
本实施例提供的封装方法，将通过磁芯和电气绕组组装而成的分离式磁性器件贴装在引线框架上，并不是将单独封装后的磁性器件贴装在引线框架上。该分离式磁性器件的电气绕组的一端直接与半导体裸芯片电连接，不需要通过引线框架与半导体裸芯片电连接，由于本发明实施例提供的电源模块中磁性器件为分离式磁性器件，减少了磁性器件与引线框架电连接的机械应力，提高了散热性能。同时该分离式磁性器件的电气绕组的一端直接与半导体裸芯片电连接，因而还减少了电源模块内部器件之间的连接线，降低了阻抗，提高了电源模块的效率。
图4为图3中步骤32的流程图。本实施例采用两个半磁芯和电气绕组组装分离式磁性器件，本实施例提供的封装方法为封装图1提供的电源模块的方法。如图4所示，步骤32包括：
步骤321：将一个半磁芯贴装在引线框架上。
步骤322：在半磁芯上铺设电气绕组。
步骤323：将另一个半磁芯对合设置在已贴装在引线框架上的半磁芯上。
具体封装过程如下：准备引线框架，在引线框架上印刷锡膏，将半导体裸芯片和除磁性器件之外的无源器件贴装在引线框架上，进行清洗。之后，在引线框架上安装集成电路和半磁芯的点胶，将集成电路和中突的半磁芯贴装在引线框架上，其中半磁芯的中突部分朝上。将集成电路和半磁芯底部用填充胶填充并固化。将电气绕组铺设在半磁芯上，将电气绕组的两端分别与引线框架和半导体裸芯片键合连接。集成电路和半导体裸芯片键合连接。在已贴装在引线框架上的半磁芯的中突部分点胶，将另一个半磁芯的中突部分，贴装在已贴装在引线框架上的中突部分上，使两个半磁芯对合设置。对贴装有元件的引线框架进行塑封后，切割成单个电源模块。
另外，本发明还可以采用一个外部盘绕有电气绕组的磁芯组装分离式磁性器件。此时，步骤32具体可为将外部盘绕有电气绕组的磁芯贴装在引线框架上。具体封装过程如下：准备引线框架，在引线框架上印刷锡膏，将半导体裸芯片和除磁性器件之外的无源器件贴装在引线框架上，进行清洗。之后，在引线框架上安装集成电路和磁芯的点胶，将集成电路和外部盘绕有电气绕组的磁芯贴装在引线框架上。将电气绕组的两端分别与引线框架和半导体裸芯片键合连接。集成电路和半导体裸芯片键合连接。对贴装有元件的引线框架进行塑封后，切割成单个电源模块。上述封装方法可为封装图2提供的电源模块的方法。
本实施例提供的封装方法，将通过磁芯和电气绕组组装而成的分离式磁性器件贴装在引线框架上，并不是将单独封装后的磁性器件贴装在引线框架上。该分离式磁性器件的电气绕组的一端直接与半导体裸芯片电连接，不需要通过引线框架与半导体裸芯片电连接，由于本发明实施例提供的电源模块中磁性器件为分离式磁性器件，减少了磁性器件与引线框架电连接的机械应力，提高了散热性能。同时该分离式磁性器件的电气绕组的一端直接与半导体裸芯片电连接，因而还减少了电源模块内部器件之间的连接线，降低了阻抗，提高了电源模块的效率。
最后应说明的是：以上实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。

Claims (17)

1.一种电源模块，包括引线框架、集成电路、无源器件和至少一个半导体裸芯片，其特征在于：
所述无源器件中的至少一个磁性器件为通过磁芯和电气绕组组装成的分离式磁性器件；
所述电气绕组的一端与所述引线框架电连接，以使所述电气绕组的一端通过所述引线框架与所述集成电路和除所有磁性器件之外的无源器件电连接；所述电气绕组的另一端直接与所述半导体裸芯片电连接。
2.根据权利要求1所述的电源模块，其特征在于，所述磁芯包括两个对合设置的半磁芯，所述电气绕组设置在所述两个半磁芯对合的空间中。
3.根据权利要求1所述的电源模块，其特征在于，所述电气绕组沿所述磁芯的外部盘绕。
4.根据权利要求1至3任一项所述的电源模块，其特征在于，所述电源模块包括两个半导体裸芯片，其中，一个所述半导体裸芯片的源极与另一个所述半导体裸芯片的栅极电连接；所述电气绕组的另一端直接与一个所述半导体裸芯片的源极电连接，所述电气绕组的另一端还直接与另一个所述半导体裸芯片的栅极电连接。
5.根据权利要求1至4任一项所述的电源模块，其特征在于，所述电气绕组为铝带，所述电气绕组的一端采用键合方式或粘接方式与所述引线框架电连接，所述电气绕组的另一端采用键合方式或粘接方式直接与所述半导体裸芯片电连接。
6.根据权利要求1至5任一项所述的电源模块，其特征在于，所述半导体裸芯片通过铝带键合方式或粘合方式与所述引线框架电连接。
7.根据权利要求1至6任一项所述的电源模块，其特征在于，所述电气绕组的匝数为单匝或多匝。
8.根据权利要求1至6任一项所述的电源模块，其特征在于，所述电气绕组的匝数为多匝时，各匝之间相互串联或并联。
9.根据权利要求1至8任一项所述的电源模块，其特征在于，所述半导体裸芯片为垂直半导体器件。
10.一种电源模块的封装方法，其特征在于，包括：
将至少一个半导体裸芯片和除磁性器件之外的无源器件以及集成电路贴装在引线框架上；
将通过磁芯和电气绕组组装成的分离式磁性器件贴装在所述引线框架上；
将所述电气绕组的一端与所述引线框架电连接，将所述电气绕组的另一端直接与所述半导体裸芯片电连接；
对贴装有元件的引线框架进行塑封后，切割成单个电源模块。
11.根据权利要求10所述的方法，其特征在于，所述将通过磁芯和电气绕组组装成的分离式磁性器件贴装在所述引线框架上包括：
将一个半磁芯贴装在所述引线框架上；
在所述半磁芯上铺设电气绕组，
将另一个半磁芯对合设置在已贴装在所述引线框架上的半磁芯上。
12.根据权利要求10所述的方法，其特征在于，所述将通过磁芯和电气绕组组装成的分离式磁性器件贴装在所述引线框架上包括：
将外部盘绕有电气绕组的磁芯贴装在所述引线框架上。
13.根据权利要求10至12任一项所述的方法，其特征在于，所述电气绕组为铝带，所述电气绕组的一端采用键合方式或粘接方式与所述引线框架电连接，所述电气绕组的另一端采用键合方式或粘接方式直接与所述半导体裸芯片电连接。
14.根据权利要求10至13任一项所述的方法，其特征在于，所述半导体裸芯片通过铝带键合方式或粘合方式与所述引线框架电连接。
15.根据权利要求10至14任一项所述的方法，其特征在于，所述电气绕组的匝数为单匝或多匝。
16.根据权利要求10至14任一项所述的方法，其特征在于，所述电气绕组的匝数为多匝时，各匝之间相互串联或并联。
17.根据权利要求10至16任一项所述的方法，其特征在于，所述半导体裸芯片为垂直半导体器件。
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