CN102766857B - 等离子体处理系统 - Google Patents

等离子体处理系统 Download PDF

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Publication number
CN102766857B
CN102766857B CN201210137245.XA CN201210137245A CN102766857B CN 102766857 B CN102766857 B CN 102766857B CN 201210137245 A CN201210137245 A CN 201210137245A CN 102766857 B CN102766857 B CN 102766857B
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CN
China
Prior art keywords
electrode bus
coupled
bus
positive
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201210137245.XA
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English (en)
Chinese (zh)
Other versions
CN102766857A (zh
Inventor
托马斯·V·博尔登
艾尔玛·M·卡利卡
罗伯特·S·康德拉少弗
路易斯·费耶罗
詹姆士·D·格蒂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nordson Corp
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Nordson Corp
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Filing date
Publication date
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Publication of CN102766857A publication Critical patent/CN102766857A/zh
Application granted granted Critical
Publication of CN102766857B publication Critical patent/CN102766857B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
CN201210137245.XA 2011-05-04 2012-05-04 等离子体处理系统 Expired - Fee Related CN102766857B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/100,605 2011-05-04
US13/100,605 US8333166B2 (en) 2011-05-04 2011-05-04 Plasma treatment systems and methods for uniformly distributing radiofrequency power between multiple electrodes

Publications (2)

Publication Number Publication Date
CN102766857A CN102766857A (zh) 2012-11-07
CN102766857B true CN102766857B (zh) 2016-04-13

Family

ID=47089447

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210137245.XA Expired - Fee Related CN102766857B (zh) 2011-05-04 2012-05-04 等离子体处理系统

Country Status (5)

Country Link
US (1) US8333166B2 (enExample)
JP (1) JP6068825B2 (enExample)
KR (1) KR101935766B1 (enExample)
CN (1) CN102766857B (enExample)
TW (1) TWI618456B (enExample)

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US8372238B2 (en) * 2008-05-20 2013-02-12 Nordson Corporation Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes
WO2010005933A2 (en) 2008-07-07 2010-01-14 Lam Research Corporation Passive capacitively-coupled electrostatic (cce) probe arrangement for detecting plasma instabilities in a plasma processing chamber
KR101588482B1 (ko) * 2008-07-07 2016-01-25 램 리써치 코포레이션 플라즈마 처리 챔버에 사용하기 위한 진공 갭을 포함하는 플라즈마 대향 프로브 장치
KR101136728B1 (ko) * 2010-10-18 2012-04-20 주성엔지니어링(주) 기판처리장치와 그의 분해 및 조립방법
US8333166B2 (en) * 2011-05-04 2012-12-18 Nordson Corporation Plasma treatment systems and methods for uniformly distributing radiofrequency power between multiple electrodes
TWI473382B (zh) * 2012-09-28 2015-02-11 Au Optronics Corp 無線電力傳輸裝置
KR101819839B1 (ko) 2013-10-04 2018-01-17 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 전원장치
JP5857207B2 (ja) * 2013-11-18 2016-02-10 パナソニックIpマネジメント株式会社 プラズマ処理装置及び方法
JP6726865B2 (ja) * 2015-06-05 2020-07-22 パナソニックIpマネジメント株式会社 プラズマ生成装置
CN105142324A (zh) * 2015-08-17 2015-12-09 深圳市华鼎星科技有限公司 一种线性等离子发生器
KR101881536B1 (ko) * 2017-02-24 2018-07-24 주식회사 뉴파워 프라즈마 출력전류 제어가 가능한 전력공급장치 및 이를 이용한 전력공급방법
KR101881535B1 (ko) * 2017-02-24 2018-07-24 주식회사 뉴파워 프라즈마 수동소자를 구비한 전력공급장치 및 이를 이용한 플라즈마 점화를 위한 전력제공방법
HUE047152T2 (hu) * 2017-02-28 2020-04-28 Meyer Burger Germany Gmbh Elektródegység belsõ villamos hálózattal nagyfrekvenciás feszültség hozzávezetésére és tartószerkezet plazmakezelõ berendezéshez
KR102038276B1 (ko) * 2017-04-12 2019-10-30 (주)아이작리서치 배치 타입의 플라즈마 원자층 증착 장치
US11143618B2 (en) * 2018-04-09 2021-10-12 Roche Sequencing Solutions, Inc. Fabrication of tunneling junctions with nanopores for molecular recognition
CN108787634A (zh) * 2018-07-19 2018-11-13 深圳市神州天柱科技有限公司 一种等离子清洗机
CN110042348A (zh) * 2019-03-12 2019-07-23 深圳奥拦科技有限责任公司 等离子表面处理装置及方法
CN110911262B (zh) * 2019-11-12 2022-07-22 北京北方华创微电子装备有限公司 电感耦合等离子体系统
WO2022011581A1 (en) * 2020-07-15 2022-01-20 Nordson Corporation Plasma treatment with isolated cooling paths
KR102405333B1 (ko) * 2020-11-25 2022-06-07 (주)이노플라즈텍 평판형 필터 전극을 이용한 분말 표면처리용 플라즈마 장치
AU2021402001A1 (en) * 2020-12-18 2023-07-06 Xefco Pty Ltd System for treatment of substrates
US11621587B1 (en) 2022-07-18 2023-04-04 Caps Medical Ltd. Configurable plasma generating system
JP2025525575A (ja) * 2022-07-18 2025-08-05 キャプス メディカル リミテッド プラズマ発生システム
US12389521B2 (en) 2022-07-18 2025-08-12 Caps Medical Ltd. Plasma generating system
US12542256B2 (en) * 2022-11-21 2026-02-03 Applied Materials, Inc. Batch processing chambers for plasma-enhanced deposition

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CN101420816A (zh) * 2007-10-22 2009-04-29 新动力等离子体株式会社 容性耦合等离子体反应器
CN102027810A (zh) * 2008-05-14 2011-04-20 应用材料股份有限公司 使用rf功率传递的时间分解调频方案以用于脉冲等离子体工艺的方法及设备

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JP2961103B1 (ja) * 1998-04-28 1999-10-12 三菱重工業株式会社 プラズマ化学蒸着装置
GB2344930B (en) * 1998-12-17 2003-10-01 Trikon Holdings Ltd Inductive coil assembly
KR20060115734A (ko) 2003-10-28 2006-11-09 노드슨 코포레이션 플라즈마 프로세싱 시스템 및 플라즈마 처리 방법
US7993489B2 (en) * 2005-03-31 2011-08-09 Tokyo Electron Limited Capacitive coupling plasma processing apparatus and method for using the same
US20090255630A1 (en) * 2005-04-28 2009-10-15 Hitachi Kokusai Electric Inc. Substrate processing apparatus and electrode member
JP5168907B2 (ja) * 2007-01-15 2013-03-27 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
TWI440405B (zh) * 2007-10-22 2014-06-01 New Power Plasma Co Ltd 電容式耦合電漿反應器
US8372238B2 (en) 2008-05-20 2013-02-12 Nordson Corporation Multiple-electrode plasma processing systems with confined process chambers and interior-bussed electrical connections with the electrodes
US8333166B2 (en) * 2011-05-04 2012-12-18 Nordson Corporation Plasma treatment systems and methods for uniformly distributing radiofrequency power between multiple electrodes

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101420816A (zh) * 2007-10-22 2009-04-29 新动力等离子体株式会社 容性耦合等离子体反应器
CN102027810A (zh) * 2008-05-14 2011-04-20 应用材料股份有限公司 使用rf功率传递的时间分解调频方案以用于脉冲等离子体工艺的方法及设备

Also Published As

Publication number Publication date
JP6068825B2 (ja) 2017-01-25
TW201251520A (en) 2012-12-16
JP2012238593A (ja) 2012-12-06
CN102766857A (zh) 2012-11-07
KR101935766B1 (ko) 2019-01-08
KR20120125177A (ko) 2012-11-14
US8333166B2 (en) 2012-12-18
TWI618456B (zh) 2018-03-11
US20120279658A1 (en) 2012-11-08

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Granted publication date: 20160413