CN102763231A - 具有模制波长转换层的发光装置 - Google Patents
具有模制波长转换层的发光装置 Download PDFInfo
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- CN102763231A CN102763231A CN2011800096526A CN201180009652A CN102763231A CN 102763231 A CN102763231 A CN 102763231A CN 2011800096526 A CN2011800096526 A CN 2011800096526A CN 201180009652 A CN201180009652 A CN 201180009652A CN 102763231 A CN102763231 A CN 102763231A
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Images
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/18—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles incorporating preformed parts or layers, e.g. compression moulding around inserts or for coating articles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/706,149 US8771577B2 (en) | 2010-02-16 | 2010-02-16 | Light emitting device with molded wavelength converting layer |
US12/706149 | 2010-02-16 | ||
PCT/IB2011/050472 WO2011101764A1 (en) | 2010-02-16 | 2011-02-03 | Light emitting device with molded wavelength converting layer |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102763231A true CN102763231A (zh) | 2012-10-31 |
CN102763231B CN102763231B (zh) | 2017-10-27 |
Family
ID=44041702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180009652.6A Active CN102763231B (zh) | 2010-02-16 | 2011-02-03 | 具有模制波长转换层的发光装置 |
Country Status (7)
Country | Link |
---|---|
US (2) | US8771577B2 (zh) |
EP (1) | EP2537190B1 (zh) |
JP (1) | JP5718368B2 (zh) |
KR (1) | KR101780728B1 (zh) |
CN (1) | CN102763231B (zh) |
TW (2) | TWI612693B (zh) |
WO (1) | WO2011101764A1 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104576892A (zh) * | 2013-10-21 | 2015-04-29 | 隆达电子股份有限公司 | 波长转换膜、波长转换膜贴合结构及发光结构与其制法 |
WO2017198055A1 (zh) * | 2016-05-20 | 2017-11-23 | 厦门三安光电有限公司 | 发光二极管封装结构的制作方法 |
CN108323216A (zh) * | 2015-11-06 | 2018-07-24 | Lg伊诺特有限公司 | 发光封装和包括该发光封装的车辆照明装置 |
WO2020024583A1 (zh) * | 2018-08-02 | 2020-02-06 | 深圳光峰科技股份有限公司 | 波长转换元件及其制备方法 |
CN112334298A (zh) * | 2018-07-30 | 2021-02-05 | 脸谱科技有限责任公司 | 使用拾取工具的光学形成 |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080029720A1 (en) | 2006-08-03 | 2008-02-07 | Intematix Corporation | LED lighting arrangement including light emitting phosphor |
JP2011219597A (ja) * | 2010-04-08 | 2011-11-04 | Nitto Denko Corp | シリコーン樹脂シート |
US20110309393A1 (en) | 2010-06-21 | 2011-12-22 | Micron Technology, Inc. | Packaged leds with phosphor films, and associated systems and methods |
US9394238B2 (en) | 2010-07-21 | 2016-07-19 | Lonza Ltd. | Process for the production of carnitine from β-lactones |
US8835199B2 (en) * | 2010-07-28 | 2014-09-16 | GE Lighting Solutions, LLC | Phosphor suspended in silicone, molded/formed and used in a remote phosphor configuration |
JP5767062B2 (ja) * | 2010-09-30 | 2015-08-19 | 日東電工株式会社 | 発光ダイオード封止材、および、発光ダイオード装置の製造方法 |
US9546765B2 (en) | 2010-10-05 | 2017-01-17 | Intematix Corporation | Diffuser component having scattering particles |
TWI445216B (zh) * | 2010-11-17 | 2014-07-11 | Harvatek Corp | 具有沈積式螢光批覆層之發光二極體封裝結構及其製作方法 |
TWI441361B (zh) * | 2010-12-31 | 2014-06-11 | Interlight Optotech Corp | 發光二極體封裝結構及其製造方法 |
WO2013056009A1 (en) * | 2011-10-13 | 2013-04-18 | Intematix Corporation | Photoluminescence wavelength conversion components for solid-state light emitting devices and lamps |
JP5751154B2 (ja) | 2011-12-14 | 2015-07-22 | 豊田合成株式会社 | 発光装置及びその製造方法 |
US8896010B2 (en) | 2012-01-24 | 2014-11-25 | Cooledge Lighting Inc. | Wafer-level flip chip device packages and related methods |
WO2013112435A1 (en) * | 2012-01-24 | 2013-08-01 | Cooledge Lighting Inc. | Light - emitting devices having discrete phosphor chips and fabrication methods |
US9257617B2 (en) * | 2012-02-10 | 2016-02-09 | Koninklijke Philips N.V. | Wavelength converted light emitting device |
US20130309792A1 (en) * | 2012-05-21 | 2013-11-21 | Michael A. Tischler | Light-emitting dies incorporating wavelength-conversion materials and related methods |
US10914534B2 (en) | 2012-10-01 | 2021-02-09 | Fractal Antenna Systems, Inc. | Directional antennas from fractal plasmonic surfaces |
US11322850B1 (en) | 2012-10-01 | 2022-05-03 | Fractal Antenna Systems, Inc. | Deflective electromagnetic shielding |
WO2014055573A1 (en) | 2012-10-01 | 2014-04-10 | Fractal Antenna Systems, Inc. | Radiative transfer and power control with fractal metamaterial and plasmonics |
US10866034B2 (en) | 2012-10-01 | 2020-12-15 | Fractal Antenna Systems, Inc. | Superconducting wire and waveguides with enhanced critical temperature, incorporating fractal plasmonic surfaces |
US11268771B2 (en) | 2012-10-01 | 2022-03-08 | Fractal Antenna Systems, Inc. | Enhanced gain antenna systems employing fractal metamaterials |
US20140185269A1 (en) | 2012-12-28 | 2014-07-03 | Intermatix Corporation | Solid-state lamps utilizing photoluminescence wavelength conversion components |
CN105121951A (zh) | 2013-03-15 | 2015-12-02 | 英特曼帝克司公司 | 光致发光波长转换组件 |
US10400984B2 (en) * | 2013-03-15 | 2019-09-03 | Cree, Inc. | LED light fixture and unitary optic member therefor |
TWI527274B (zh) * | 2013-04-29 | 2016-03-21 | 新世紀光電股份有限公司 | 發光二極體封裝結構 |
KR20160032236A (ko) * | 2013-07-19 | 2016-03-23 | 코닌클리케 필립스 엔.브이. | 광학 요소를 가지며 기판 캐리어를 갖지 않는 pc led |
JP2015079926A (ja) * | 2013-09-10 | 2015-04-23 | 旭化成ケミカルズ株式会社 | 光デバイス、およびその製造方法 |
US10439111B2 (en) | 2014-05-14 | 2019-10-08 | Genesis Photonics Inc. | Light emitting device and manufacturing method thereof |
US9997676B2 (en) | 2014-05-14 | 2018-06-12 | Genesis Photonics Inc. | Light emitting device and manufacturing method thereof |
TWI557952B (zh) * | 2014-06-12 | 2016-11-11 | 新世紀光電股份有限公司 | 發光元件 |
KR20160010206A (ko) * | 2014-07-18 | 2016-01-27 | 서울바이오시스 주식회사 | 웨이퍼 레벨 패키지 공정을 이용한 발광 소자 제조 방법 및 그것에 의해 제조된 발광 소자 |
KR101504139B1 (ko) | 2014-12-30 | 2015-03-19 | 주식회사 루멘스 | 발광 소자 패키지의 제조 방법 |
DE102015101143A1 (de) * | 2015-01-27 | 2016-07-28 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zu dessen Herstellung |
US9882096B2 (en) | 2015-03-18 | 2018-01-30 | Genesis Photonics Inc. | Light emitting diode structure and method for manufacturing the same |
TWI657597B (zh) | 2015-03-18 | 2019-04-21 | 新世紀光電股份有限公司 | 側照式發光二極體結構及其製造方法 |
US20170338387A1 (en) * | 2015-06-30 | 2017-11-23 | Seoul Semiconductor Co., Ltd. | Light emitting diode |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1574407A (zh) * | 2003-06-18 | 2005-02-02 | 丰田合成株式会社 | 发光器件 |
CN101312184A (zh) * | 2007-03-13 | 2008-11-26 | 信越化学工业株式会社 | 发光二极管芯片和透镜的整体结构物及其制造方法 |
CN101533886A (zh) * | 2009-04-28 | 2009-09-16 | 友达光电股份有限公司 | 发光模块的封装方法 |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6252254B1 (en) * | 1998-02-06 | 2001-06-26 | General Electric Company | Light emitting device with phosphor composition |
US5959316A (en) * | 1998-09-01 | 1999-09-28 | Hewlett-Packard Company | Multiple encapsulation of phosphor-LED devices |
US6987613B2 (en) * | 2001-03-30 | 2006-01-17 | Lumileds Lighting U.S., Llc | Forming an optical element on the surface of a light emitting device for improved light extraction |
US6686676B2 (en) * | 2001-04-30 | 2004-02-03 | General Electric Company | UV reflectors and UV-based light sources having reduced UV radiation leakage incorporating the same |
JP4268389B2 (ja) * | 2002-09-06 | 2009-05-27 | Towa株式会社 | 電子部品の樹脂封止成形方法及び装置 |
JP4496774B2 (ja) | 2003-12-22 | 2010-07-07 | 日亜化学工業株式会社 | 半導体装置の製造方法 |
JPWO2005086239A1 (ja) * | 2004-03-05 | 2008-01-24 | コニカミノルタホールディングス株式会社 | 白色発光ダイオード(led)及び白色ledの製造方法 |
JP2005259847A (ja) | 2004-03-10 | 2005-09-22 | Nitto Denko Corp | 光半導体装置の製造方法 |
JP2006140362A (ja) | 2004-11-15 | 2006-06-01 | Nitto Denko Corp | 光半導体素子封止用シートおよび該シートを用いた光半導体装置の製造方法 |
US7344902B2 (en) * | 2004-11-15 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Overmolded lens over LED die |
US7352011B2 (en) * | 2004-11-15 | 2008-04-01 | Philips Lumileds Lighting Company, Llc | Wide emitting lens for LED useful for backlighting |
US7452737B2 (en) * | 2004-11-15 | 2008-11-18 | Philips Lumileds Lighting Company, Llc | Molded lens over LED die |
US20060171152A1 (en) | 2005-01-20 | 2006-08-03 | Toyoda Gosei Co., Ltd. | Light emitting device and method of making the same |
US20100155738A1 (en) * | 2005-02-22 | 2010-06-24 | Hiroyuki Nabeta | Light Emitting Diode and Method for Manufacturing Same |
JP5196711B2 (ja) | 2005-07-26 | 2013-05-15 | 京セラ株式会社 | 発光装置およびそれを用いた照明装置 |
US7344952B2 (en) | 2005-10-28 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Laminating encapsulant film containing phosphor over LEDs |
JP3120556U (ja) * | 2005-11-29 | 2006-04-13 | 東貝光電科技股▲ふん▼有限公司 | 混合光発光ダイオード構造 |
JP2009524212A (ja) | 2006-01-16 | 2009-06-25 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Eu含有蛍光体材料を有する発光装置 |
US7943952B2 (en) * | 2006-07-31 | 2011-05-17 | Cree, Inc. | Method of uniform phosphor chip coating and LED package fabricated using method |
JP4876760B2 (ja) | 2006-08-01 | 2012-02-15 | 大日本印刷株式会社 | 発光装置および白色変換シート |
CN101679859A (zh) | 2007-06-05 | 2010-03-24 | 皇家飞利浦电子股份有限公司 | 自支撑发光膜和磷光体增强照明系统 |
JP2009094262A (ja) * | 2007-10-09 | 2009-04-30 | Toyoda Gosei Co Ltd | 発光装置の製造方法 |
US7984999B2 (en) | 2007-10-17 | 2011-07-26 | Xicato, Inc. | Illumination device with light emitting diodes and moveable light adjustment member |
US7989236B2 (en) * | 2007-12-27 | 2011-08-02 | Toyoda Gosei Co., Ltd. | Method of making phosphor containing glass plate, method of making light emitting device |
RU2518184C2 (ru) | 2008-03-07 | 2014-06-10 | Конинклейке Филипс Электроникс Н.В. | Светоизлучающее устройство переменного цвета |
CN105481362A (zh) | 2008-06-02 | 2016-04-13 | 松下电器产业株式会社 | 半导体发光设备以及使用所述半导体发光设备的光源设备 |
TWI372175B (en) * | 2008-06-10 | 2012-09-11 | Gigno Technology Co Ltd | Phosphor film |
US9074751B2 (en) * | 2008-06-20 | 2015-07-07 | Seoul Semiconductor Co., Ltd. | Lighting apparatus |
JP5107886B2 (ja) * | 2008-12-24 | 2012-12-26 | 日東電工株式会社 | 光半導体装置の製造方法 |
US8168998B2 (en) * | 2009-06-09 | 2012-05-01 | Koninklijke Philips Electronics N.V. | LED with remote phosphor layer and reflective submount |
US20110031516A1 (en) * | 2009-08-07 | 2011-02-10 | Koninklijke Philips Electronics N.V. | Led with silicone layer and laminated remote phosphor layer |
JP5310536B2 (ja) | 2009-12-25 | 2013-10-09 | 豊田合成株式会社 | 発光装置の製造方法 |
TWI441361B (zh) * | 2010-12-31 | 2014-06-11 | Interlight Optotech Corp | 發光二極體封裝結構及其製造方法 |
-
2010
- 2010-02-16 US US12/706,149 patent/US8771577B2/en active Active
-
2011
- 2011-01-12 TW TW104143940A patent/TWI612693B/zh active
- 2011-01-12 TW TW100101110A patent/TWI529974B/zh active
- 2011-02-03 KR KR1020127024000A patent/KR101780728B1/ko active IP Right Grant
- 2011-02-03 EP EP11707915.2A patent/EP2537190B1/en active Active
- 2011-02-03 WO PCT/IB2011/050472 patent/WO2011101764A1/en active Application Filing
- 2011-02-03 CN CN201180009652.6A patent/CN102763231B/zh active Active
- 2011-02-03 JP JP2012552497A patent/JP5718368B2/ja active Active
-
2014
- 2014-06-04 US US14/295,370 patent/US9847465B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1574407A (zh) * | 2003-06-18 | 2005-02-02 | 丰田合成株式会社 | 发光器件 |
CN101312184A (zh) * | 2007-03-13 | 2008-11-26 | 信越化学工业株式会社 | 发光二极管芯片和透镜的整体结构物及其制造方法 |
CN101533886A (zh) * | 2009-04-28 | 2009-09-16 | 友达光电股份有限公司 | 发光模块的封装方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104576892A (zh) * | 2013-10-21 | 2015-04-29 | 隆达电子股份有限公司 | 波长转换膜、波长转换膜贴合结构及发光结构与其制法 |
CN108323216A (zh) * | 2015-11-06 | 2018-07-24 | Lg伊诺特有限公司 | 发光封装和包括该发光封装的车辆照明装置 |
WO2017198055A1 (zh) * | 2016-05-20 | 2017-11-23 | 厦门三安光电有限公司 | 发光二极管封装结构的制作方法 |
CN112334298A (zh) * | 2018-07-30 | 2021-02-05 | 脸谱科技有限责任公司 | 使用拾取工具的光学形成 |
CN112334298B (zh) * | 2018-07-30 | 2022-08-09 | 元平台技术有限公司 | 使用拾取工具的光学形成 |
WO2020024583A1 (zh) * | 2018-08-02 | 2020-02-06 | 深圳光峰科技股份有限公司 | 波长转换元件及其制备方法 |
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TWI529974B (zh) | 2016-04-11 |
US20140284648A1 (en) | 2014-09-25 |
CN102763231B (zh) | 2017-10-27 |
EP2537190A1 (en) | 2012-12-26 |
JP2013520004A (ja) | 2013-05-30 |
TW201133956A (en) | 2011-10-01 |
US20110198780A1 (en) | 2011-08-18 |
TW201613144A (en) | 2016-04-01 |
US8771577B2 (en) | 2014-07-08 |
JP5718368B2 (ja) | 2015-05-13 |
WO2011101764A1 (en) | 2011-08-25 |
TWI612693B (zh) | 2018-01-21 |
KR101780728B1 (ko) | 2017-09-21 |
US9847465B2 (en) | 2017-12-19 |
KR20120126104A (ko) | 2012-11-20 |
EP2537190B1 (en) | 2014-05-07 |
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