CN102751215A - 用于超结功率器件结构的下层外延层电阻测量结构 - Google Patents
用于超结功率器件结构的下层外延层电阻测量结构 Download PDFInfo
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- CN102751215A CN102751215A CN 201210261901 CN201210261901A CN102751215A CN 102751215 A CN102751215 A CN 102751215A CN 201210261901 CN201210261901 CN 201210261901 CN 201210261901 A CN201210261901 A CN 201210261901A CN 102751215 A CN102751215 A CN 102751215A
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- H01—ELECTRIC ELEMENTS
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CN201210261901.7A CN102751215B (zh) | 2012-07-26 | 用于超结功率器件结构的下层外延层电阻测量结构 |
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CN201210261901.7A CN102751215B (zh) | 2012-07-26 | 用于超结功率器件结构的下层外延层电阻测量结构 |
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CN102751215A true CN102751215A (zh) | 2012-10-24 |
CN102751215B CN102751215B (zh) | 2016-11-30 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108281365A (zh) * | 2018-01-24 | 2018-07-13 | 德淮半导体有限公司 | 用于晶圆可接受性测试的焊盘及其制造方法 |
CN112614900A (zh) * | 2020-11-27 | 2021-04-06 | 中国电子科技集团公司第十三研究所 | 一种光导开关封装结构 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108281365A (zh) * | 2018-01-24 | 2018-07-13 | 德淮半导体有限公司 | 用于晶圆可接受性测试的焊盘及其制造方法 |
CN112614900A (zh) * | 2020-11-27 | 2021-04-06 | 中国电子科技集团公司第十三研究所 | 一种光导开关封装结构 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140504 |
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Effective date of registration: 20140504 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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