CN102738314B - Device for light emitting diode substrate separation - Google Patents
Device for light emitting diode substrate separation Download PDFInfo
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- CN102738314B CN102738314B CN201110091809.6A CN201110091809A CN102738314B CN 102738314 B CN102738314 B CN 102738314B CN 201110091809 A CN201110091809 A CN 201110091809A CN 102738314 B CN102738314 B CN 102738314B
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Abstract
The invention provides a device for light emitting diode substrate separation, relating to the technical field of a semiconductor light emitting diode. A separation structure of the invention includes an inverted light emitting diode and a support substrate under the inverted light emitting diode. The light emitting diode comprises a buffer layer, an N type semiconductor layer, a light emitting layer, a P type semiconductor layer and a reflection layer which are arranged on a sapphire substrate in order. The structure is characterized in that: the peripheral of the separation structure is provided with a solid support from a position under the support substrate to the sapphire substrate, viscose glue is filled between the solid support and the separation structure, and an upper end of the viscose glue is sealed by a metal pressure ring. According to the invention, an overshoot phenomenon caused in the separation of a gallium nitride based vertical light emitting diode and an abnormal masking phenomenon caused by the introduction of large particle contaminations can be avoided, the yield rate of the product is raised, the device is suitable for a high frequency laser, and the production efficiency is raised.
Description
Technical field
The present invention relates to semiconductor light-emitting-diode technical field, the device of peeling off especially for base material in LED structure with gallium nitride system and epitaxial loayer.
Background technology
From first red light semiconductor LED in 1969, light the course of existing decades till now, from laboratory light efficiency, promote and transfer to gradually practical application, its expensive production is restricting the universal of LED always, yet in the way of research and development low cost process, the yield of chip has conclusive effect, especially true for high-power thin-film LED.Therefore large multiple enterprises is all using final chip yield as an important references weighing whole technique quality, and in the whole manufacturing process of vertical stratification, an indispensable step is peeling off of substrate.Can say, because the irreversibility of peel results, the quality of stripping technology has important function to the lifting of yield.
In prior art, the substrate desquamation technology of LED is all to provide one group of laser array to transition zone top, in the mode of thermal decomposition, transition zone is stripped down.As a laser array being provided to Sapphire Substrate 101 tops, and the most of Sapphire Substrate 101 that can see through of this laser is irradiated to GaN surface, and all absorbed by GaN, but must with plating mode bonding one, be different from another support substrates 107 outside Sapphire Substrate 101 first to this structure before this process, and this support substrates 107 must be conducted electricity, and have certain intensity, and this substrate to there is good capacity of heat transmission, as shown in Figure 1.Of the prior artly peel off the shortcoming that mode exists and have: support substrates 107 is with plating mode, to be bonded to that this is structural, therefore, in electroplating process, at these support substrates 107 back sides, inevitably generate some granular Metal Ball, cause this structure this metal structure when this laser array is peeled off Sapphire Substrate 101 tilt and cause that Energy distribution is inhomogeneous, cause overshoot phenomenon; In electroplating process, because of inevitably minimal stress release, and this metal structure surface causing is not desirable burnishing surface, can cause this structure and this laser array generation absolute displacement in stripping process, causes peeling off deviation, causes serious overshoot phenomenon; In electroplating process, other imperfect phenomenon of introducing at this metallic support face, the overshoot causing.
Summary of the invention
For the shortcoming existing in above-mentioned prior art, the object of this invention is to provide a kind of device for light-emitting diode substrate desquamation.The improper occlusion that it can avoid the larger particles dirt of overshoot phenomenon that gallium nitride based vertical LED causes when peeling off and introducing to cause, improves the yield of product, is applicable to the use of high-frequency laser, enhances productivity.
In order to reach foregoing invention object, technical scheme of the present invention realizes in following two kinds of modes:
Mode one
For a device for light-emitting diode substrate desquamation, its lift-off structure comprises the support substrates of inverted light-emitting diode and inverted light-emitting diode below.Described light-emitting diode comprises resilient coating, n type semiconductor layer, luminescent layer, p type semiconductor layer and the reflector that is placed in successively Sapphire Substrate top.Its design feature is, the periphery of described lift-off structure is equipped with the solid support from support substrates below to Sapphire Substrate, between solid support and lift-off structure, fills viscose glue, and the upper end of viscose glue seals with set metal pressure ring.
In said apparatus, described viscose glue adopts blue film or other stickum.
Mode two
For a device for light-emitting diode substrate desquamation, its lift-off structure comprises the support substrates of inverted light-emitting diode and inverted light-emitting diode below.Described light-emitting diode comprises resilient coating, n type semiconductor layer, luminescent layer, p type semiconductor layer and the reflector that is placed in successively Sapphire Substrate top.Its design feature is, the below of described support substrates is equipped with tack coat, and the below of tack coat is equipped with supporting layer.
In said apparatus, described tack coat adopts blue film or other stickum.
The present invention is owing to having adopted above-mentioned structure, with prior art comparison, its beneficial effect is: greatly reduced the overshoot phenomenon causing when gallium nitride based vertical LED base material is separated with Sapphire Substrate, yield while significantly having promoted gallium nitride based diode production, greatly improved the production efficiency of gallium nitride based vertical LED, reduced the cost of product, be more conducive to the universal of gallium nitride based diode energy-saving illumination and promote.
Below in conjunction with the drawings and specific embodiments, the invention will be further described.
Accompanying drawing explanation
Fig. 1 is the structural representation of light-emitting diode substrate desquamation in prior art;
Fig. 2 is a kind of execution mode structural representation in the present invention;
Fig. 3 is another kind of execution mode structural representation in the present invention.
Embodiment
Embodiment mono-
Referring to Fig. 2, lift-off structure of the present invention comprises the support substrates 107 of inverted light-emitting diode and inverted light-emitting diode below.Light-emitting diode comprises resilient coating 102, n type semiconductor layer 103, luminescent layer 104, p type semiconductor layer 105 and the reflector 106 that is placed in successively Sapphire Substrate 101 tops.The periphery of lift-off structure is equipped with the solid support 211 from support substrates 107 belows to Sapphire Substrate 101, fills the viscose glue 209 of blue film or other stickum between solid support 211 and lift-off structure, metal pressure ring 202 sealings for the upper end of viscose glue 209.
Substrate desquamation process of the present invention is:
1) 211 li of solid support, place viscose glue 209, make viscose glue 209 heating and melting, lift-off structure is put into solid support 211.
2), after substrate 107 to be supported and solid support 211 are bonded together, above viscose glue 209, exposed place applies a metal pressure ring 202 209 coverings of exposed viscose glue, then naturally cooling.
3) when the power supply one of laser array 100, open, laser array 100 is just launched energy.The energy being provided by laser array 100 is between Sapphire Substrate 101 and resilient coating 102, and laser array 100 can be absorbed or be only had a small amount of absorption by Sapphire Substrate 101, and is all absorbed on resilient coating 102 surfaces.Utilize thermal decomposition principle that Sapphire Substrate 101 and resilient coating 102 are peeled away.
4) heating viscose glue 209, removes metal pressure ring 202, makes lift-off structure separated with solid support 211.
Embodiment bis-
Referring to Fig. 3, lift-off structure of the present invention comprises the support substrates 107 of inverted light-emitting diode and inverted light-emitting diode below.Light-emitting diode comprises resilient coating 102, n type semiconductor layer 103, luminescent layer 104, p type semiconductor layer 105 and the reflector 106 that is placed in successively Sapphire Substrate 101 tops.The below of support substrates 107 is equipped with the tack coat 308 of blue film or other goo, and the below of tack coat 308 is equipped with supporting layer 309.
Substrate desquamation process of the present invention is:
1) below lift-off structure, apply one deck tack coat 308, the tack coat 308 belows one deck supporting layer 309 that bonds again;
2) when the power supply one of laser array 100, open, laser array 100 is just launched energy.The energy being provided by laser array 100 is between Sapphire Substrate 101 and resilient coating 102, and laser array 100 can be absorbed or be only had a small amount of absorption by Sapphire Substrate 101, and is all absorbed on resilient coating 102 surfaces.Utilize thermal decomposition principle that Sapphire Substrate 101 and resilient coating 102 are peeled away.
3) manual separation lift-off structure and supporting layer 309.
The above, it is only better case study on implementation of the present invention, the any pro forma restriction of not the present invention being made, is not departing within the scope of the technology of the present invention thinking, and all change that the above method makes or technical schemes of equivalent variations utilized all belong within the scope of technical scheme of the present invention.
Claims (2)
1. the device for light-emitting diode substrate desquamation, its lift-off structure comprises the support substrates (107) of inverted light-emitting diode and inverted light-emitting diode below, described light-emitting diode comprises the resilient coating (102) that is placed in successively Sapphire Substrate (101) top, n type semiconductor layer (103), luminescent layer (104), p type semiconductor layer (105) and reflector (106), it is characterized in that, the periphery of described lift-off structure is equipped with from the solid support (211) of support substrates (107) below to Sapphire Substrate (101), between solid support (211) and lift-off structure, fill viscose glue (209), the upper end of viscose glue (209) seals with set metal pressure ring (202).
2. the device for light-emitting diode substrate desquamation according to claim 1, is characterized in that, described viscose glue (209) adopts blue film or other stickum.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110091809.6A CN102738314B (en) | 2011-04-13 | 2011-04-13 | Device for light emitting diode substrate separation |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110091809.6A CN102738314B (en) | 2011-04-13 | 2011-04-13 | Device for light emitting diode substrate separation |
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| CN102738314A CN102738314A (en) | 2012-10-17 |
| CN102738314B true CN102738314B (en) | 2014-12-03 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101853903A (en) * | 2009-04-01 | 2010-10-06 | 中国科学院半导体研究所 | Method for preparing gallium nitride-based light emitting diode with vertical structure |
| CN101896993A (en) * | 2007-12-10 | 2010-11-24 | 霆激技术有限公司 | Fabrication of semiconductor devices |
| CN202042508U (en) * | 2011-04-13 | 2011-11-16 | 同方光电科技有限公司 | Device for peeling substrate of light-emitting diode (LED) |
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2011
- 2011-04-13 CN CN201110091809.6A patent/CN102738314B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101896993A (en) * | 2007-12-10 | 2010-11-24 | 霆激技术有限公司 | Fabrication of semiconductor devices |
| CN101853903A (en) * | 2009-04-01 | 2010-10-06 | 中国科学院半导体研究所 | Method for preparing gallium nitride-based light emitting diode with vertical structure |
| CN202042508U (en) * | 2011-04-13 | 2011-11-16 | 同方光电科技有限公司 | Device for peeling substrate of light-emitting diode (LED) |
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| CN102738314A (en) | 2012-10-17 |
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Application publication date: 20121017 Assignee: Nantong Tongfang Semiconductor Co.,Ltd. Assignor: Tongfang Opto-electronic Co., Ltd. Contract record no.: 2015990000187 Denomination of invention: Device for light emitting diode substrate separation Granted publication date: 20141203 License type: Exclusive License Record date: 20150413 |
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Effective date of registration: 20170525 Address after: 226015 Nantong economic and Technological Development Zone, Jiangsu, Oriental Avenue, No. 499 Patentee after: Nantong Tongfang Semiconductor Co.,Ltd. Address before: 100083 Haidian District Tsinghua Tongfang Technology Plaza, block A, floor 29, Beijing Patentee before: Tongfang Opto-electronic Co., Ltd. |