CN102738022B - 组装包括绝缘衬底和热沉的半导体器件的方法 - Google Patents

组装包括绝缘衬底和热沉的半导体器件的方法 Download PDF

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CN102738022B
CN102738022B CN201110094128.5A CN201110094128A CN102738022B CN 102738022 B CN102738022 B CN 102738022B CN 201110094128 A CN201110094128 A CN 201110094128A CN 102738022 B CN102738022 B CN 102738022B
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heat sink
semiconductor element
dielectric substrate
semiconductor device
array
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CN102738022A (zh
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骆军华
姚晋钟
尹保冠
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NXP USA Inc
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Freescale Semiconductor Inc
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Priority to US13/442,878 priority patent/US8643170B2/en
Publication of CN102738022A publication Critical patent/CN102738022A/zh
Priority to US14/155,309 priority patent/US8722465B1/en
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Abstract

本发明涉及组装包括绝缘衬底和热沉的半导体器件的方法。半导体管芯安装在热沉阵列框架结构上。所述热沉阵列框架结构和半导体管芯通过绝缘衬底组装在一起，所述绝缘衬底具有粘合带上的孔的对应阵列。所述半导体管芯与绝缘衬底上的电接触电连接。所述半导体管芯、热沉和到电接触的电连接通过模塑化合物密封，然后密封的阵列被去带和拆分。

Description

组装包括绝缘衬底和热沉的半导体器件的方法
技术领域
本发明涉及半导体封装，并且更具体地，涉及组装包括半导体管芯以及绝缘衬底和热沉(heat sink)的半导体器件的方法。
背景技术
半导体器件封装实现例如提供电连接以及保护管芯抵抗机械和环境应力的基本功能。完成的半导体器件可以安装在例如印刷电路板(“PCB”)等的具有电连接器的支座上。半导体器件可以具有用于与支座上的电连接器连接的露出的外部电接触表面或引线。使用表面安装技术，封装的引线或外部电接触表面可以直接焊接到支座上的对应焊盘，提供机械附接以及电连接。
半导体器件通常通过密封一个或多个半导体管芯来进行封装以便进行表面安装，所述密封处理包括将管芯嵌入模塑化合物(moldingcompound)中。多种技术可用于将封装的引线或外部电接触表面与嵌入的半导体管芯上的电接触焊盘内部连接。
在导线结合封装中，管芯可以安装在管芯支座上，其中管芯的接触焊盘位于其与管芯支座相对工作面(active face)上。在密封之前，导线则可以结合到接触焊盘，并且结合到封装的引线或外部电接触表面，以提供内部连接。
在引线框型封装中，管芯支座可以是导电引线框，在制造期间，其框部件被切断和丢弃，以在施加模塑化合物密封管芯、内部连接和来自引线框的外部电接触之后使封装的电接触表面或引线彼此隔离。通过该技术，封装的外部电接触可以在完成的器件的工作面中或在器件的边沿，绕在半导体管芯的外围设置。然而，外部电接触的最小间距和数值密度受到相邻接触之间短路危险的限制。
在例如层叠基底封装或陶瓷基底封装的绝缘衬底封装中，管芯可以安装在支承外部电接触表面的电绝缘衬底上。层叠基底封装的例子包括球栅阵列(BGA)、针栅阵列(PGA)和面栅阵列(LGA)封装。在一种绝缘衬底封装的技术中，在密封之前，通过管芯的接触焊盘和外部电接触表面之间的导线结合实现内部连接。在密封之后，通常在拆分密封的器件之前，焊料球或柱的阵列可以施加到外部电接触表面。代替球或针，LGA封装具有例如裸露的镀金铜的金属焊盘，它们在使用中被母板上的针接触。
这种绝缘衬底封装能够实现间距较小且数值密度较高的外部电接触。然而，通常，电绝缘衬底也是绝热的。对于某些类型的半导体器件，例如高功率器件等，希望将半导体管芯安装在热沉元件上，所述热沉元件例如金属或其它导热基座(flag)，其将内部产生的热量散布到半导体管芯的面上，并通过进行辐射和/或对流来耗散该热量。
希望在绝缘衬底半导体管芯封装中的热沉设置应最小化封装处理的复杂程度，并且不增加成本。
附图说明
本发明通过示例的方式说明，并且不限于附图中所示出的本发明的实施方式，在附图中，相同的附图标记指示类似的要素。附图中的要素出于简化和清楚的目的示出，并且不一定按比例绘制。
图1是通过已知方法制造的包括半导体管芯以及绝缘衬底和热沉的半导体器件的示意性截面图；
图2是通过根据本发明的实施方式的方法制造的、包括半导体管芯以及绝缘衬底和热沉的半导体器件、在与图7的箭头2-2对应的位置处截取的示意性截面图；
图3是在制造的中间阶段、图2的半导体器件中的热沉阵列结构的一部分、在与图7的箭头2-2对应的位置处截取的示意性截面图；
图4是在制造的中间阶段、图3的热沉阵列结构上安装的半导体管芯阵列的一部分、在与图7的箭头2-2对应的位置处截取的示意性截面图；
图5是在制造的中间阶段、图2的半导体器件中的电绝缘衬底的一部分的、在与图7的箭头2-2对应的位置处截取的示意性截面图；
图6是在制造的中间阶段、与图5的电绝缘衬底组装的图4的热沉阵列结构上安装的半导体管芯阵列的一部分、在与图7的箭头2-2对应的位置处截取的详细截面图；
图7是在同一制造的中间阶段图6中所示的组件的一部分的示意性平面图；
图8是组装图1的半导体器件的已知方法的简化流程图；以及
图9是根据本发明的实施方式组装图2的半导体器件的方法的简化流程图。
具体实施方式
图1示出通过已知方法制造的包括半导体管芯以及绝缘衬底24和热沉元件30的半导体器件20。半导体封装20包括集成到电绝缘有机衬底24的半导体管芯子组件22。半导体管芯子组件22包括结合到形成热沉元件的下部平台层30的半导体管芯28。有机衬底24具有开口26的阵列，半导体管芯子组件22设置在其中。例如结合导线的电互连32将半导体管芯28的焊盘34连接到形成在有机衬底24中的电接触36。弹性粘合剂38将半导体管芯子组件22固定到有机衬底24的开口26中。开口26大于半导体管芯子组件22的外周40。相应地，在有机衬底24的边沿44和半导体管芯子组件22的外周40之间形成间隙42。间隙42通过弹性粘合剂38密封。模塑材料46密封半导体管芯子组件22、有机衬底24、电互连32和弹性粘合剂38。
在图1的器件的制造过程中，单独的半导体管芯28结合到单独的热沉平台层30以形成子组件22。单面粘合带施加到有机衬底24的下侧。然后，半导体管芯子组件22被拾取并单独地放置在有机衬底24的相应的开口26中，并进行剩余的加工工艺。特别地，半导体管芯子组件22的平台层30放置在有机衬底24的开口26中，并且临时地固定到粘合带。弹性粘合剂38用于将半导体管芯子组件22固定到开口26中。弹性粘合剂38填充围绕半导体管芯子组件22的平台层30的间隙42。粘合带的存在极大地防止了弹性粘合剂38在半导体管芯子组件22之下和/或在有机衬底24之下流动。
随后，在步骤106在半导体管芯28和有机衬底24之间形成电互连32。有机衬底24、半导体管芯子组件22、弹性粘合剂38和电互连32通过例如环氧树脂的模塑化合物46密封。从有机衬底24的下侧以及从弹性粘合剂38和半导体管芯子组件22的平台层30的下侧去除粘合带。在密封后，模塑化合物46和弹性粘合剂38将半导体管芯子组件22保持在有机衬底24的开口26中的适当位置。
图2-7示出根据本发明的实施方式制造半导体器件200的方法900的各个阶段，该方法在图9的流程图中以示例的方式给出和概述。半导体器件200包括半导体管芯202、绝缘衬底204和热沉元件206。图2是在通过结合导线208将半导体管芯202与电接触元件(图2中未示出)电连接、密封在模塑化合物210中、将焊料球212的阵列施加到外部电接触表面并拆分密封单元之后，在与图7的箭头2-2对应的位置处截取的半导体器件200的截面图。
方法900包括提供图3中所示的热沉阵列结构300，包括由热沉支持框架(图3中未示出)支持的热沉元件206的阵列。热沉元件206的阵列在该示例中是二维的，但可以是一维。在该示例中，提供热沉阵列结构300包括切割并形成导热材料的薄片。
所述方法900还包括在结构300的热沉元件206的阵列上安装半导体管芯202的阵列，如图4所示。半导体管芯202可以被拾取并被单独地放置在热沉元件206上，并且可以通过导热的糊状粘合剂或焊料的中间层400固定到热沉元件206。
在所述方法900的该示例中，热沉阵列结构300包括将热沉元件206与热沉支持框架机械地连接的联结元件302，使得联结元件和热沉支持框架在密封之前支持热沉元件。在所述方法900的该示例中，拆分密封单元包括切断联结元件302。
所述方法900还包括提供呈现开口502的阵列并支承电接触元件(在图5中未示出)的电绝缘衬底500。开口502的阵列与结构300的热沉元件206的阵列在几何关系方面相同，不同之处在于开口502在二维的每一维中比热沉元件206宽。
如图6所示，所述方法900还包括将电绝缘衬底500与热沉阵列结构300组装在一起，其中热沉元件206的阵列设置在开口502的阵列中，并且支承半导体管芯202的阵列。在所述方法900的该示例中，热沉元件206偏移离开热沉支持框架和联结杆302延伸的平面600，使得当热沉阵列结构300和电绝缘衬底500组装时热沉元件206设置在开口502的阵列中，其中热沉支持框架邻接电绝缘衬底500。在该示例中，在支承半导体管芯202的阵列的热沉阵列结构300在单一操作中对准地设置在电绝缘衬底500和粘合带602上之前，将电绝缘衬底500安装在粘合带602上。
图7是图6中的部分视图中所示的组件的平面视图。热沉阵列结构300的热沉支持框架以700示出。热沉支持框架700呈现对准孔702，所述对准孔与对准工具(未示出)的针对齐，所述对准工具又与用于将热沉元件206的阵列与开口502的阵列对准的电绝缘衬底500中的对应对准孔(未示出)对齐。在该示例中，与热沉阵列结构300组装在一起包括将热沉阵列结构和电绝缘衬底设置在粘合带602上，所述粘合带602在密封之后去除。焊料球212被施加在电绝缘衬底500的外表面上的电接触元件以704示出，并且延伸通过绝缘衬底500的厚度。在绝缘衬底500的内表面上，将半导体管芯202与电接触元件704电连接的导线208结合到其。应认识到，在密封之后，特别地通过模塑化合物210，包括热沉元件206、联结杆302和热沉支持框架700的热沉阵列结构30与电接触元件704和导线208间隔开，从而保持与它们的电绝缘。
在该示例中，在例如通过结合导线208将半导体管芯与电接触元件704电连接之后，所述方法900还包括在模塑化合物210中将在粘合带602上安装在热沉元件206的阵列上并与电绝缘衬底500组装的半导体管芯202的阵列密封。在图2所示的器件的制造过程中，半导体管芯以及对应的热沉元件、电绝缘衬底的周围部分和电接触元件的密封单元然后被拆分。拆分可以包括沿着阵列的相邻单元之间的路线锯切或冲压，例如切断联结杆302并分离和丢弃热沉支持框架700，以留下具有半导体管芯202、对应的热沉元件206、电绝缘衬底500的周围部分以及所连接的电接触元件的密封单元。模塑化合物210将半导体管芯202与对应的热沉元件206以及电绝缘衬底500的周围部分和电接触元件结合在密封单元中。
图8是概述生产图1的半导体器件20的已知方法的简化流程图。在802，方法800开始半导体封装加工处理。在804，提供电绝缘衬底24。在806，单独的半导体管芯28被结合到单独的热沉平台层30，以形成半导体管芯与热沉平台层30的半导体管芯子组件22。在808，向有机衬底的下侧施加粘合带。然后在810，半导体管芯子组件22被拾取，并被单独地放置到有机衬底24的相应开口26中，这是通过以每个半导体管芯子组件22的平台层30位于有机衬底24的相应开口26中的粘合带的粘合侧上的方式设置每个半导体管芯子组件22而实现的。在812中使用弹性粘合剂38，以将每一个半导体管芯子组件22固定在对应的开口26中，并填充间隙42。所述方法800继续，在814提供半导体管芯28与有机衬底24的接触之间的电互连32，在816密封有机衬底24、半导体管芯28、弹性粘合剂38以及电互连32，在818从有机衬底24的下侧去除粘合带，并且所述方法800在820终止。
在图9的简化流程图中概述了根据本发明的实施方式通过示例的方法给出的图2的半导体器件200的制造方法900。
在902，所述方法900开始半导体封装组装处理。在904，提供电绝缘衬底500和热沉阵列框架结构300。在906，半导体管芯202安装在热沉阵列框架结构300上。在908，绝缘衬底500和在其上具有半导体管芯202的整个热沉阵列框架结构300在粘合带上组装在一起。所述方法继续，其中各步骤与方法800的步骤814至820大致类似。更具体地说，所述方法900继续，在910中将半导体管芯202与绝缘衬底500上的电接触704电连接。在912，将半导体管芯202、热沉元件206和到接触704的电连接208密封，之后进行密封阵列的去带处理以及模塑化合物的后成型固化。在914，附接焊料球212，之后进行激光和焊剂清洗操作，然后拆分，并且所述方法900在916结束。
应认识到，所述方法900避免了像方法800中那样操作单独的子组件22以将它们单独地放置在相应的开口26中，以及施加弹性粘合剂38以在对应的开口26中固定每个单独的半导体管芯子组件22。从而实质地简化了封装处理并且降低了成本。
在以上的说明书中，已经参照本发明的实施方式的具体示例描述了本发明。然而，显然可在其中进行各种修改和变化，而不脱离由所附权利要求书给出的本发明的较宽的精神和范围。

Claims (5)

1.一种半导体器件，包括：
热沉，所述热沉包括热沉元件和从所述热沉元件的侧边向外延伸的整体联结杆，所述热沉元件具有顶部表面和底部表面；
半导体管芯，附接到所述热沉元件的所述顶部表面；
绝缘衬底，包围所述热沉元件和所附接的半导体管芯，其中所述绝缘衬底包括从所述绝缘衬底的第一表面延伸到所述绝缘衬底的相反的第二表面的接触部阵列，其中所述绝缘衬底具有开口，所述开口的宽度大于其所包围的热沉元件的宽度，从而在所述绝缘衬底的开口的边沿与所述热沉元件的外周之间形成间隙；
电连接，将所述半导体管芯的工作表面与所述绝缘衬底的接触部连接；以及
模塑化合物，覆盖所述半导体管芯、所述电连接以及所述绝缘衬底的第一表面，其中所述热沉元件的底部表面，所述绝缘衬底的第二表面以及所述联结杆的远端是暴露的。
2.如权利要求1所述的半导体器件，其中所述电连接包括结合线。
3.如权利要求1所述的半导体器件，进一步包括附接到绝缘层的第二表面上的接触部阵列的导电球阵列，所述导电球允许与所述半导体管芯的外部电通信。
4.如权利要求1所述的半导体器件，其中由所述半导体管芯产生的热量经由所述热沉和所述联结杆耗散。
5.如权利要求1所述的半导体器件，其中所述热沉包括三个附加的联结杆，其中所述附加的联结杆之一从所述热沉元件的各侧边延伸。
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CN102738022A (zh) 2012-10-17

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