CN102736169A - 多模光纤和光学系统 - Google Patents
多模光纤和光学系统 Download PDFInfo
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Abstract
本发明涉及一种多模光纤和光学系统。所述多模光纤从中心到外周依次包括内纤芯、内包层、凹槽和外包层,其中:所述内纤芯的半径r1为22μm~28μm,所述内纤芯的渐变折射率分布的相对折射率差n0是所述内纤芯的最大折射率值且ncl是所述内纤芯的最小折射率值;所述内包层的半径为r2,所述内包层相对于所述外包层的折射率差为Δn2;所述凹槽的半径为r3,所述凹槽相对于所述外包层的负的折射率差为Δn3,所述凹槽包住所述内包层;0.0115807+0.0127543×(r2-r1)+0.00241674×1000Δn3-0.00124086×(r3-r2)×1000Δn3<2%;以及小于-20μm。
Description
技术领域
本发明涉及光纤传输领域,尤其涉及泄漏模式的数量减小了的弯曲不敏感多模光纤。
背景技术
传统上,光纤包括光纤芯或内纤芯以及光包层或外包层,其中,光纤芯或内纤芯用于传输光信号并且可以对光信号进行放大,而光包层或外包层用于将光信号限制在内纤芯内。为此,内纤芯的折射率nc大于外包层的折射率ng。
对于光纤,通常将折射率分布限定为与用于标绘使折射率和光纤半径相关联的函数的图形的轨迹相关。传统上,沿着横轴示出相对于光纤中心的距离r,并且沿着纵轴示出光纤中心的给定距离处的折射率和光纤外包层的折射率之间的差。因此,对于形状分别为阶梯形、梯形、三角形或渐变形的图形,将折射率分布称为“阶梯”、“梯形”、“三角形”或“α(alpha)”(还称为渐变折射率)分布。这些曲线代表光纤的理论分布或设定分布,因而光纤的制造约束可能导致略微不同的分布。
主要存在多模光纤(“MMF”)和单模光纤这两类光纤。在MMF中,对于给定波长,多个光模式沿着光纤同时传播。在单模光纤中,基本模式为特许模式并且高阶模式被大幅衰减。
在阶梯折射率的光纤中,不同的模式以不同的速度沿着光纤传播,这造成光脉冲的扩散,而光脉冲的扩散可能与位时间相当并且导致不能接受的错误率。为了减小MMF的模间色散,已提出了制造具有“α”纤芯分布的渐变折射率的光纤。这种光纤已经使用了很多年,并且在D.Gloge等人发表的出版物“Multimode theory of graded-core fibers”,Bell System TechnicalJournal,1973 pp 1563-1578、以及G.Yabre发表的出版物“Comprehensive theory of dispersion in graded-index opticalfibers”,Journal of Lightwave Technology,February 2000,vol.18,No.2,pp 166-177中已具体描述了这种光纤的特性。
可以将一般的渐变折射率分布定义为某一点处的折射率值n与从该点到光纤中心的距离r之间的关系:
其中,α≥1(α→与阶梯折射率相对应的∞),n0是多模纤芯的最大折射率值(通常与内纤芯的中心处的折射率值相对应),并且a是多模纤芯的半径;以及
其中,ncl是多模纤芯的最小折射率值,其通常与内纤芯和内包层之间的边界处的折射率值相对应,并且还通常与(最常见是由二氧化硅制成的)外包层的折射率值相对应。
通常,对于50μm的MMF,a=25μm,并且对于62.5μm的MMF,a=31.25μm。参数α通常为1.9~2.2,并且使参数α最佳以在通常为850nm或1300nm的目标工作波长处提供最大带宽。
用以确保MMF在多千兆位以太网(Ethernet)通信内的良好性能的关键参数是针对弯曲的抵抗性(还称为“抗弯曲性”)以及带宽。
抗弯曲性通常可以通过利用容量大的凹槽包住渐变折射率的纤芯来容易地得以改进。凹槽相对于光纤的外包层具有负的折射率差。必须仔细设计凹槽的位置和大小以避免带宽的劣化。
然而,在凹槽使引导模式的抗弯曲性得以改进的情况下,还将允许被称为“泄漏模式”的附加模式与所期望的引导模式共同传播。
泄漏模式展现出被称为“泄漏损耗”的附加损耗。如技术人员众所周知的,凹槽越大,泄漏损耗越低。另一方面,凹槽越深,即凹槽相对于外包层的负的折射率差越大,泄漏模式的数量越高。
常规MMF、即抗弯曲性无明显改进的MMF内也存在泄漏模式,但这些泄漏模式实际上可被看作不存在,这是因为它们的泄漏损耗的程度极高。
另一方面,利用一般的槽辅助,根据对于与常规MMF的兼容性而言至关重要的槽设计,泄漏模式的泄漏损耗降低使得这些泄漏模式可以在几米甚至更长的范围内传播。
因而,问题是如何设计出泄漏模式对光学特性(例如,纤芯大小和数值孔径)的影响有限且仍提供高抗弯曲性的槽辅助的渐变折射率多模光纤。
例如US-A-2009 0154888、US-A-2008 0166094、JP-A-200647719和US-A-2010 0067858、以及US-A-2009 169163等的多个文献涉及槽辅助MMF。然而,这些文献均未涉及泄漏模式的影响。
本发明人的于本申请的优先权日之后公布的文献EP 2339384公开了一种弯曲损耗降低了的高带宽MMF。然而,本发明选择了不同的方法。
文献FR-A-2949870涉及泄漏模式的问题。然而,文献FR-A-2949870关注数值孔径即远场而不是关注内纤芯的大小即近场,从而限制泄漏模式的作用。本发明涉及不同的方法。
发明内容
本发明目的在于弥补上述的现有技术的缺陷。
更具体地,本发明提出了对凹槽在光纤的折射率分布中的尺寸和位置进行配置,从而防止槽辅助理念固有的泄漏模式的任何有害影响,同时保持光纤的高抗弯曲性(所谓的“弯曲不敏感性”)。
为此,本发明提供一种多模光纤,其从中心到外周依次包括内纤芯、内包层、凹槽和外包层,其中:
所述内纤芯的半径r1为22μm~28μm,并且所述内纤芯的渐变折射率分布的相对折射率差
其中,n0是所述内纤芯的最大折射率值,并且ncl是所述内纤芯的最小折射率值,
所述内包层的半径为r2,并且所述内包层相对于所述外包层的折射率差为Δn2,
所述凹槽的半径为r3,所述凹槽相对于所述外包层的负的折射率差为Δn3,并且所述凹槽包住所述内包层,
其中,0.0115807+0.0127543×(r2-r1)+0.00241674×1000Δn3-0.00124086×(r3-r2)×1000Δn3<2%;以及
根据一个实施例,本发明的所述光纤的
根据另一实施例,在波长850nm处,对于曲率半径5mm,宏弯曲损耗低于0.3dB/匝。
根据另一实施例,所述折射率差Δn3为-15×10-3~-5.8×10-3。
根据另一实施例,r2-r1为0.8μm~7μm。
根据另一实施例,r2-r1为0.8μm~2μm。
根据另一实施例,所述折射率差Δn2为-0.1×10-3~+0.1×10-3,更优选基本等于0。
根据另一实施例,在所有的引导模式和泄漏模式都被激励的情况下、在所述多模光纤的2m(米)试样处所述内纤芯的大小的测量值和在所述多模光纤的900m试样处所述内纤芯的大小的测量值之间的变化小于1μm。
为此,本发明还提供一种包括如上简明扼要地描述的多模光纤的至少一部分的光学系统。
附图说明
通过阅读以下参考附图以非限制性示例的方式所给出的本发明的特定实施例的说明,本发明的其它特征和优点将变得清楚,其中:
图1是示出根据本发明的特定实施例中的光纤的折射率分布的图;
图2是示出根据本发明的线性模型和物理模拟所计算出的光纤的900m之后内纤芯的大小与2m之后内纤芯的大小之间的相对差的比较的图;以及
图3说明在ITU-T推荐G651.1所推荐的特定注入条件下、50μm的MMF的一些示例在以曲率半径5mm绕两匝的情况下的宏弯曲损耗。
具体实施方式
参考图1将更好地理解本发明,其中图1示出根据本发明的特定实施例中的光纤的折射率分布。
根据本发明的光纤是多模光纤,其从中心到外周依次包括内纤芯、内包层、凹槽和外包层。
内纤芯具有渐变折射率的折射率分布,其中,内纤芯的端部位于相对于光纤中心的径向距离(还称为内纤芯的“半径”)r1处,该径向距离r1为22μm~28μm。在α分布的开头,内纤芯相对于外包层的折射率差为Δn1。
表述“α分布的开头”表示内纤芯的折射率分布具有最大值n0的位置、通常为内纤芯的中心。在α分布的末尾,内纤芯相对于外包层的折射率差为Δnend。表述“α分布的末尾”表示如下的径向距离,其中超出该径向距离,该分布不再呈“α”形。
内纤芯的相对折射率差Δ为如下:
其中,n0是内纤芯的最大折射率值,并且ncl是内纤芯的最小折射率值。通常,ncl是未掺杂的二氧化硅的折射率。
内包层包住内纤芯。在实施例中,内包层直接包住内纤芯。内包层的端部位于相对于光纤中心的径向距离(还称为内包层的“半径”)r2处。内包层相对于外包层的折射率差为Δn2。在图1的优选实施例中,Δn2优选为-0.1×10-3~+0.1×10-3,更优选基本等于0。
凹槽包住内包层,其中该凹槽的端部位于相对于光纤中心的径向距离(还称为凹槽的“半径”)r3处。在实施例中,凹槽直接包住内包层。凹槽相对于外包层的负的折射率差为Δn3。在实施例中,外包层直接包住凹槽。
通常以μm为单位的差r2-r1还被称为内纤芯的端部与凹槽之间的“间距”,其与内包层的“宽度”相同。通常也以μm为单位的差r3-r2还被称为凹槽的“宽度”。值1000×Δn3还被称为凹槽的“深度”。
根据本发明,内纤芯的端部和凹槽之间的间距、槽宽度和槽深度满足如下的条件,从而限制泄漏模式的影响。
0.0115807+0.0127543×(r2-r1)+0.00241674×1000Δn3-0.00124086×(r3-r2)×1000Δn3<2%
其中,r2-r1和r3-r2以μm为单位。
该条件左侧表示为“diff”的项,即
diff=0.0115807+0.0127543×(r2-r1)+0.00241674×1000Δn3-0.00124086×(r3-r2)×1000Δn3
是通过对如下的数据的集合进行线性回归分析所获得的,其中,这些数据是通过对折射率分布展现出如下表2所概述的各种间距、宽度和深度的组合的46μm槽辅助MMF的60个试样的2m之后纤芯大小以及900m之后纤芯大小进行模拟所得到的。在表2中,参数“diff”是900m处纤芯大小和2m处纤芯大小之间的相对差。
表2
图2的图形说明了给出“diff”的上述公式的线性模型的质量。即,图2示出根据线性模型(参见给出“diff”的上述公式)和物理模拟所计算出的900m处纤芯大小和2m处纤芯大小之间的相对差的比较。
上述条件即diff<2%意味着:在OFL(过满注入)下,泄漏模式对在光纤的2m试样处的输出端观察到的近场模式造成的干扰不明显。
在本发明中,如上所定义的参数“diff”小于2%。
更具体地,对于2m光纤试样和900m光纤试样,利用IEC60793-1-20方法C(该方法为本领域的技术人员众所周知,并且包含通过在OFL下分析光纤端部的横截面的近场光分布(还称为近场模式)并利用或不利用曲线拟合计算纤芯直径来确定光纤的内纤芯的横截面直径)进行的测量所得到的纤芯大小之间的差接近2%,不进行曲线拟合就是直接来自k级(其中,k是根据标准规程IEC 60793-1-20方法C定义纤芯半径所使用的阈值,k=2.5%)的测量模式。
另外,在所有的引导模式和泄漏模式都被激励的情况下、在光纤的2m试样处内纤芯的大小的测量值和在光纤的900m试样处内纤芯的大小的测量值之间的变化小于1μm。
为了改进抗弯曲性,在优先实施例中,对凹槽进行设计以使得(r3-r2)×1000Δn3小于-20μm(即,宽度×深度小于-20μm)。
对内纤芯的端部和凹槽之间的间距进行选择,以优选足够大至允许利用内纤芯和凹槽之间的内包层的折射率来对带宽进行微调。例如,“间距”r2-r1大于0.8μm,并且优选为0.8μm~7μm,更优选为0.8μm~2μm。
根据本发明的优选实施例,凹槽的深度Δn3为-15×10-3~-5.8×10-3,更优选为-10×10-3~-5.8×10-3。
下表1a给出不是根据本发明的光纤的示例。下表1b给出根据本发明的光纤的示例。参数“diff”是上述所定义的条件的左侧的项。
diff=0.0115807+0.0127543×(r2-r1)+0.00241674×1000Δn3-0.00124086×(r3-r2)×1000Δn3
表1a
表1b
宏弯曲损耗主要依赖于宽度×深度的乘积。下表3给出该乘积为不同的值的50μm的MMF的一些示例。宏弯曲损耗是在标准IEC 60793-1-47所定义的特定注入条件下根据ITU-T推荐G651.1在850nm处测量出的。“BL 2匝5mm”表示以曲率半径5mm绕两匝情况下的宏弯曲损耗。
表3a
表3b
在表3a中,这些示例全部示出条件diff>2%并且弯曲损耗高。宏弯曲损耗可以改进,但将对纤芯大小造成有害影响。对于以粗体示出的示例,宏弯曲损耗可以改进,但作用于近场的泄漏模式将过大。这都与diff>2%有关。
图3的图形说明了表3a(空白方块)和表3b(全黑三角形)的示例。该图形示出在ITU-T G651.1所推荐的注入条件下、表3a和表3b所列出的对于以曲率半径5mm绕两匝的50μm的MMF的示例的宏弯曲损耗(以dB为单位)。可以看出,根据本发明的实施例,在波长850nm处,对于曲率半径5mm,光纤所展现出的宏弯曲损耗低于0.4dB/匝。因此,根据本发明的光纤除了使其泄漏模式的数量减小以外,还提供了高的抗弯曲性。
本发明还提供包括如上所述的多模光纤的至少一部分的光学系统。
应当注意,可以对色散模式延迟(DMD)进行改进,从而满足如下的标准OM3和OM4的要求。
表4
OM3光纤的DMD规格
OM3光纤满足这六种规格中的至少一种。外部DMD、内部DMD和滑动(sliding)DMD的值以ps/m为单位。
表5
OM4光纤的DMD规格
OM4光纤满足这三种规格中的至少一种。外部DMD、内部DMD和滑动DMD的值以ps/m表示。
这些标准定义了被命名为分别具有掩模的内部DMD、外部DMD和滑动DMD的这三个DMD值。内部掩模从5μm一直延伸到18μm,并且外部掩模从0μm延伸到23μm。滑动掩模是在7μm、9μm、11μm和13μm的偏移处相继开始的5μm宽的掩模。
基于四分之一最高(at quarter maximum)的上升时间和下降时间并且考虑到基准输入脉冲的FWQM,这些DMD值与给定的还称为掩模的偏移注入分组内的最快脉冲和最慢脉冲之间的延迟相对应。
这些DMD值是根据通过如下的DMD测量获得的DMD标绘所计算出的,其中这些DMD测量包含针对径向扫描光纤纤芯的单模注入测量该光纤的脉冲响应。
通过选择r2-r1、Δn2和Δn3的适当值,可以使DMD最佳。
此外,由于降低了宏弯曲损耗,因此在弯曲时这些DMD值很有可能保持不变。
Claims (10)
3.根据权利要求1或2所述的多模光纤,其特征在于,在波长850nm处,对于曲率半径5mm的宏弯曲损耗低于0.3dB/匝。
4.根据权利要求1至3中任一项所述的多模光纤,其特征在于,所述负的折射率差Δn3为-15×10-3~-5.8×10-3。
5.根据权利要求1至4中任一项所述的多模光纤,其特征在于,所述内包层的半径r2和所述内纤芯的半径r1之差r2-r1为0.8μm~7μm。
6.根据权利要求5所述的多模光纤,其特征在于,所述r2-r1为0.8μm~2μm。
7.根据权利要求1至6中任一项所述的多模光纤,其特征在于,所述折射率差Δn2为-0.1×10-3~+0.1×10-3。
8.根据权利要求1至7中任一项所述的多模光纤,其特征在于,所述折射率差Δn2基本等于0。
9.根据权利要求1至8中任一项所述的多模光纤,其特征在于,在所有的引导模式和泄漏模式都被激励的情况下、在所述多模光纤的2m试样处所述内纤芯的大小的测量值和在所述多模光纤的900m试样处所述内纤芯的大小的测量值之间的变化小于1μm。
10.一种光学系统,其包括根据权利要求1至9中任一项所述的多模光纤的至少一部分。
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-
2011
- 2011-03-29 EP EP11305344A patent/EP2506044A1/en not_active Withdrawn
-
2012
- 2012-03-28 JP JP2012072853A patent/JP5945441B2/ja active Active
- 2012-03-29 DK DK12161943.1T patent/DK2506045T3/da active
- 2012-03-29 ES ES12161943.1T patent/ES2513016T3/es active Active
- 2012-03-29 EP EP12161943.1A patent/EP2506045B1/en active Active
- 2012-03-29 US US13/434,101 patent/US8639079B2/en active Active
- 2012-03-29 CN CN201210088701.6A patent/CN102736169B/zh active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105408784B (zh) * | 2013-06-26 | 2019-10-15 | 德拉卡康泰克公司 | 具有减少的泄漏模影响的抗弯多模光纤 |
CN106324752A (zh) * | 2016-11-08 | 2017-01-11 | 长飞光纤光缆股份有限公司 | 一种高带宽抗辐射多模光纤 |
CN106324752B (zh) * | 2016-11-08 | 2019-01-22 | 长飞光纤光缆股份有限公司 | 一种高带宽抗辐射多模光纤 |
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Publication number | Publication date |
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CN102736169B (zh) | 2016-03-16 |
DK2506045T3 (da) | 2014-10-20 |
JP2012208497A (ja) | 2012-10-25 |
JP5945441B2 (ja) | 2016-07-05 |
US8639079B2 (en) | 2014-01-28 |
EP2506045B1 (en) | 2014-07-16 |
ES2513016T3 (es) | 2014-10-24 |
EP2506045A1 (en) | 2012-10-03 |
US20120251062A1 (en) | 2012-10-04 |
EP2506044A1 (en) | 2012-10-03 |
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