CN102729642B - Thermal head and manufacture method thereof - Google Patents

Thermal head and manufacture method thereof Download PDF

Info

Publication number
CN102729642B
CN102729642B CN201210107289.8A CN201210107289A CN102729642B CN 102729642 B CN102729642 B CN 102729642B CN 201210107289 A CN201210107289 A CN 201210107289A CN 102729642 B CN102729642 B CN 102729642B
Authority
CN
China
Prior art keywords
liner
substrate
thickness
conductive component
thermal heads
Prior art date
Application number
CN201210107289.8A
Other languages
Chinese (zh)
Other versions
CN102729642A (en
Inventor
奥村真澄
Original Assignee
罗姆股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2011-089205 priority Critical
Priority to JP2011089205 priority
Priority to JP2011089206 priority
Priority to JP2011-089206 priority
Priority to JP2012-063193 priority
Priority to JP2012063193A priority patent/JP2012228871A/en
Application filed by 罗姆股份有限公司 filed Critical 罗姆股份有限公司
Publication of CN102729642A publication Critical patent/CN102729642A/en
Application granted granted Critical
Publication of CN102729642B publication Critical patent/CN102729642B/en

Links

Abstract

The invention provides a thermal head. The thermal head (1) possesses a substrate (1), a heating resistor (4) arranged at the side along z direction, an electrode layer (3) arranged at the side of the thickness direction of the substrate (1) and conducted to the heating resistor (4), a control mechanism (5) arranged at the side of the thickness direction of the substrate (1). The electrode layer (3) possesses common electrode wiring (31) and a plurality of individual electrode wirings (32) separated from the common electrode wiring (31). Each individual electrode wiring (32) possesses a connection portion (325) overlapped with the control mechanism (5) when viewed from the thickness direction of the substrate (1). The thermal head is thin through the structure.

Description

The manufacture method of thermal head and thermal head

Technical field

The present invention relates to thermal head (thermal head) and manufacture method thereof.

Background technology

An example (for example, referring to Japanese Unexamined Patent Publication 2009-154359 publication) of what Figure 22 represented is existing thermal head.Substrate 91, glaze layer 92, heating resistor layer 93, electrode layer 94, drive IC 95, electric wire 96 and protection resin 97 is possessed with the thermal head 90 shown in figure.This thermal head 90 is for printing the printed medium 98 be supplied between this thermal head 90 and impression cylinder opposed with it (platen roller) (diagram slightly).Printed medium 98 uses such as heat-sensitive paper etc.Electrode layer 94 is connected with outside supply unit, makes the local pyrexia of heat resistance layer 93.Drive IC 95 is connected by electric wire 96 with electrode layer 94.Protection resin 97 pairs of drive IC 95 and electric wire 96 carry out covering protection.

In this thermal head 90, by not shown impression cylinder, printed medium 98 is pressed against heating resistor layer 93.When the printed medium 98 of movement contacts with protection resin 97 by impression cylinder, often injure printed medium 98.In order to prevent this state of affairs, require that more unfertile land forms protection resin 97.But at thermal head 90, in order to ensure the reliability of device, needs protection resin 97 covers electric wire 96, is difficult to the slimming realizing protection resin 97.

Summary of the invention

The present invention develops based on above-mentioned situation, its object is to, and provides a kind of thermal head and the manufacture method thereof that can realize slimming.

The thermal head that first aspect present invention provides possesses: substrate, be arranged at the side of the thickness direction of aforesaid substrate heating resistor, be arranged at the thickness direction of aforesaid substrate side and with the electrode layer of above-mentioned heating resistor conducting, the controlling organization being arranged at the side of the thickness direction of aforesaid substrate, wherein, above-mentioned electrode layer possesses public electrode distribution, leaves and the multiple single electrode distributions mutually left from above-mentioned public electrode distribution, and above-mentioned each single electrode distribution has connecting portion overlapping with above-mentioned controlling organization viewed from the thickness direction of aforesaid substrate time.

In the preferred embodiment of the present invention, above-mentioned controlling organization possesses the bottom surface opposed with the face of the side of the above-mentioned thickness direction of aforesaid substrate, is arranged at multiple liners of above-mentioned bottom surface, the arbitrary connecting portion conducting in the arbitrary liner in above-mentioned multiple liner and multiple above-mentioned connecting portion.

In the preferred embodiment of the present invention, above-mentioned multiple connecting portion arranges along the first direction orthogonal with above-mentioned thickness direction, above-mentioned multiple liner comprises multiple first liners arranged along above-mentioned first direction, the arbitrary liner in above-mentioned multiple first liner and arbitrary connecting portion conducting of above-mentioned multiple connecting portion.

In the preferred embodiment of the present invention, above-mentioned multiple first liner configures in overlapped mode viewed from above-mentioned first direction time.

In the preferred embodiment of the present invention, viewed from above-mentioned thickness direction time, above-mentioned each connecting portion is overlapping with any one in above-mentioned multiple first liner.

In the preferred embodiment of the present invention, possess and to be clipped on above-mentioned thickness direction between above-mentioned controlling organization and aforesaid substrate and the multiple conductive components mutually left viewed from above-mentioned thickness direction time, above-mentioned multiple conductive component comprises the first conductive component all contacted with the arbitrary connecting portion both sides in above-mentioned multiple connecting portion with the arbitrary liner in above-mentioned multiple first liner.

The thermal head that second aspect present invention provides possesses: substrate, be arranged at the heating resistor of the side of the thickness direction of aforesaid substrate, be arranged at the thickness direction of aforesaid substrate side and with the electrode layer of above-mentioned heating resistor conducting, be arranged at the controlling organization of the side of the thickness direction of aforesaid substrate, wherein, above-mentioned electrode layer possesses public electrode distribution, leave and the multiple single electrode distributions mutually left from above-mentioned public electrode distribution, above-mentioned controlling organization possess with the side of the above-mentioned thickness direction of aforesaid substrate in the face of to bottom surface, be arranged at multiple liners of above-mentioned bottom surface, above-mentioned multiple liner comprises multiple first liners arranged along the first direction orthogonal with above-mentioned thickness direction, any one distribution conducting at least any one liner in above-mentioned multiple first liner and above-mentioned multiple single electrode distribution.

In the preferred embodiment of the present invention, above-mentioned each single electrode distribution have viewed from above-mentioned thickness direction time with any one the overlapping connecting portion in above-mentioned multiple first liner.

In the preferred embodiment of the present invention, possess and to be clipped on above-mentioned thickness direction between above-mentioned controlling organization and aforesaid substrate and the multiple conductive components mutually left viewed from above-mentioned thickness direction time, above-mentioned multiple conductive component possess viewed from above-mentioned thickness direction time with at least any one first conductive component be connected in above-mentioned multiple first liner, above-mentioned first conductive component abuts with above-mentioned connecting portion overlapping with above-mentioned first liner being connected with above-mentioned first conductive component viewed from above-mentioned thickness direction time.

In the preferred embodiment of the present invention, above-mentioned multiple first liner configures in overlapped mode viewed from above-mentioned first direction time.

In the preferred embodiment of the present invention, viewed from above-mentioned thickness direction time, above-mentioned first conductive component is formed in its overall mode overlapping with above-mentioned first liner being connected with this first conductive component.

In the preferred embodiment of the present invention, above-mentioned electrode layer possesses the distribution group left from above-mentioned public electrode distribution and above-mentioned multiple single electrode distribution.

In the preferred embodiment of the present invention, above-mentioned distribution group is formed in the mode overlapping with above-mentioned controlling organization viewed from above-mentioned thickness direction time.

In the preferred embodiment of the present invention, above-mentioned multiple single electrode distribution arranges along above-mentioned first direction, above-mentioned heating resistor is formed as the band shape extended along above-mentioned first direction, above-mentioned multiple liner comprises multiple second liner, any one being formed in above-mentioned multiple first liner of ratio in the second direction orthogonal with above-mentioned thickness direction and above-mentioned first direction of described multiple second liner more leaves the position of above-mentioned heating resistor, and above-mentioned distribution group comprises the first Wiring pattern with all conducting of any one in above-mentioned multiple second liner.

In the preferred embodiment of the present invention, above-mentioned multiple conductive component comprises the second conductive component all contacted with above-mentioned first Wiring pattern both sides with any one in above-mentioned multiple second liner.

In the preferred embodiment of the present invention, above-mentioned multiple second liner arranges along above-mentioned first direction.

In the preferred embodiment of the present invention, above-mentioned multiple second liner configures in overlapped mode viewed from above-mentioned first direction time.

In the preferred embodiment of the present invention, above-mentioned multiple liner is arranged at multiple 3rd liners of not overlapping with above-mentioned first liner position when being included in viewed from above-mentioned second direction, above-mentioned distribution group comprises the second Wiring pattern, described second Wiring pattern, with any one conducting in above-mentioned multiple 3rd liner, and leave from above-mentioned first Wiring pattern.

In the preferred embodiment of the present invention, above-mentioned multiple conductive component comprises and any one the 3rd conductive component all contacted with above-mentioned second Wiring pattern both sides in above-mentioned multiple 3rd liner.

In the preferred embodiment of the present invention, above-mentioned electrode layer has from any one the isolated portion all left above-mentioned public electrode distribution, above-mentioned multiple single electrode distribution and above-mentioned distribution group viewed from above-mentioned thickness direction time, and above-mentioned multiple liner comprises the 4th liner be connected with above-mentioned isolated portion.

In the preferred embodiment of the present invention, above-mentioned multiple conductive component comprises the 4th conductive component all contacted with above-mentioned 4th liner both sides with above-mentioned isolated portion.

In the preferred embodiment of the present invention, above-mentioned multiple conductive component is the projection of gold system.

In the preferred embodiment of the present invention, above-mentioned electrode layer is layer gold.

In the preferred embodiment of the present invention, above-mentioned connecting portion is by ground floor and be laminated in the side contrary with aforesaid substrate relative to this ground floor and the second layer with the surface more coarse than above-mentioned ground floor is formed.

In the preferred embodiment of the present invention, the above-mentioned second layer comprises gold and glass.

In the preferred embodiment of the present invention, above-mentioned ground floor comprises organic gold compound.

In the preferred embodiment of the present invention, the above-mentioned second layer is than above-mentioned first thickness.

In the preferred embodiment of the present invention, above-mentioned each single electrode distribution has the bandpass portion on above-mentioned first direction with the first width and on above-mentioned first direction, has the wide width part of second width longer than the first width, and above-mentioned each wide width part is formed in not overlapping with above-mentioned controlling organization position viewed from the thickness direction of aforesaid substrate time.

In the preferred embodiment of the present invention, above-mentioned multiple single electrode distribution comprises the first single electrode distribution second single electrode distribution different from above-mentioned first single electrode distribution with the position of wide width part viewed from above-mentioned first direction time.

In the preferred embodiment of the present invention, possesses the sealing resin be clipped on the thickness direction of aforesaid substrate at least partially between aforesaid substrate and above-mentioned controlling organization.

In the preferred embodiment of the present invention, above-mentioned sealing resin is formed in the mode making the local of above-mentioned controlling organization and expose.

In the preferred embodiment of the present invention, above-mentioned controlling organization has the side that the thickness direction along aforesaid substrate erects, and above-mentioned sealing resin covers the aforesaid substrate side part of above-mentioned side, and in above-mentioned side, makes to expose with aforesaid substrate opposition side part.

In the preferred embodiment of the present invention, possess the sealing resin be clipped on the thickness direction of aforesaid substrate at least partially between aforesaid substrate and above-mentioned controlling organization, a part for above-mentioned sealing resin is infiltrated between the above-mentioned second layer of above-mentioned connecting portion and above-mentioned liner further.

In the preferred embodiment of the present invention, above-mentioned controlling organization has the multiple drive IC mutually left.

The manufacture method of the thermal head that third aspect present invention provides possesses: the operation forming heating resistor in the side of the thickness direction of substrate, the operation with the electrode layer of above-mentioned heating resistor conducting is formed in the side of the thickness direction of aforesaid substrate, the operation of controlling organization is fixed in the side of the thickness direction of aforesaid substrate, wherein, possesses the operation connecting multiple conductive component at above-mentioned controlling organization, the operation of above-mentioned formation electrode layer possesses formation public electrode distribution and leaves and the operation of the multiple single electrode distributions mutually left from above-mentioned public electrode distribution, the operation of fixing above-mentioned controlling organization possesses: make any one namely in the first conductive component and above-mentioned multiple single electrode distribution of any one in the above-mentioned multiple conductive component i.e. operation of the first single electrode wiring contacts, by the operation that above-mentioned first conductive component and above-mentioned first single electrode distribution engage.

In the preferred embodiment of the present invention, above-mentioned controlling organization possesses multiple liner, and connect at above-mentioned controlling organization in the operation of above-mentioned multiple conductive component, the mode comprising to cover above-mentioned multiple liner forms gold-plated operation.

In the preferred embodiment of the present invention, in the operation engaged with above-mentioned first single electrode distribution by above-mentioned first conductive component, ultrasonic wave vibration is applied to above-mentioned controlling organization.

In the preferred embodiment of the present invention, aforesaid substrate is elongated shape, above-mentioned controlling organization is the length direction elongated shape consistent with the length direction of aforesaid substrate, above-mentioned multiple single electrode distribution has the connecting portion engaged with multiple above-mentioned conductive component, the above-mentioned connecting portion of above-mentioned multiple single electrode distribution is arranged in row along the length direction of aforesaid substrate, in the operation that above-mentioned first conductive component and above-mentioned first single electrode distribution are engaged, apply to vibrate with the ultrasonic wave that the length direction of aforesaid substrate is direction of vibration to above-mentioned controlling organization.

In the preferred embodiment of the present invention, the size of above-mentioned first conductive component of the length direction of aforesaid substrate is less than the size of the above-mentioned connecting portion of the length direction of aforesaid substrate.

In the preferred embodiment of the present invention, above-mentioned connecting portion is by ground floor and be laminated in the opposite side of aforesaid substrate this ground floor and the second layer with the surface more coarse than above-mentioned ground floor is formed.

In the preferred embodiment of the present invention, the above-mentioned second layer comprises gold and glass.

In the preferred embodiment of the present invention, above-mentioned ground floor comprises organic gold compound.

In the preferred embodiment of the present invention, the above-mentioned second layer is than above-mentioned first thickness.

In the preferred embodiment of the present invention, also possesses the operation forming sealing resin between aforesaid substrate and above-mentioned controlling organization.

In the preferred embodiment of the present invention, the operation forming above-mentioned sealing resin to be included on the direction orthogonal with the above-mentioned thickness direction of above-mentioned controlling organization and to arrange the operation of fluid resin material at the ora terminalis leaving above-mentioned heating resistor.

About further feature of the present invention and advantage, will be clearer from the explanation of following working of an invention mode of carrying out.

Accompanying drawing explanation

Fig. 1 is the top view of the thermal head represented based on first embodiment of the invention;

Fig. 2 is the profile of the II-II line along Fig. 1;

Fig. 3 is the crucial portion amplification plan view of the thermal head shown in Fig. 1;

Fig. 4 is the bottom view representing one of drive IC shown in Fig. 1 example;

Fig. 5 is the figure of the regional area of Watch with magnifier diagram 1;

Fig. 6 is the profile of the VI-VI line along Fig. 5;

Fig. 7 is the figure of the regional area of Watch with magnifier diagram 1;

Fig. 8 is the profile of the VIII-VIII line along Fig. 7;

Fig. 9 is the crucial portion enlarged drawing of Fig. 6;

Figure 10 is the figure for being described the plan view shape of the conductive component shown in Fig. 9;

Figure 11 is the figure be described for one of manufacture method to the thermal head shown in Fig. 1 example;

Figure 12 is the figure representing the operation forming multiple conductive component in the manufacture process of the thermal head shown in Fig. 1 in drive IC;

Figure 13 is the figure representing the state being provided with drive IC in the manufacture process of the thermal head shown in Fig. 1;

Figure 14 is the figure representing the operation forming sealing resin in the manufacture process of the thermal head shown in Fig. 1;

Figure 15 is the figure representing the state being formed with sealing resin in the manufacture process of the thermal head shown in Fig. 1;

Figure 16 is the crucial portion amplification profile of the thermal head represented based on second embodiment of the invention;

Figure 17 is the crucial portion amplification plan view of the single electrode distribution representing the thermal head shown in Figure 16;

Figure 18 is the crucial portion amplification profile of one of manufacture method representing the thermal head shown in Figure 16 example;

Figure 19 is the crucial portion amplification profile representing the operation engaged with single electrode distribution by conductive component in one of the manufacture method example of the thermal head shown in Figure 16;

Figure 20 is the crucial portion amplification profile of the thermal head represented based on third embodiment of the invention;

Figure 21 is the crucial portion amplification profile of the thermal head shown in Figure 20;

Figure 22 is the profile representing one of existing thermal head example;

Detailed description of the invention

What Fig. 1 ~ Figure 10 represented is based on thermal head of the present invention.Fig. 1 is the top view of the thermal head based on present embodiment, and Fig. 2 is its profile.The more detail section of what Fig. 3 ~ Figure 10 represented is thermal head A1.Thermal head A1 shown in Fig. 1 and Fig. 2 possesses substrate 1, glaze layer 2, electrode layer 3, heating resistor 4, controlling organization 5, protection resin 6 and protective layer 7.As shown in Figure 2, the printed medium 8 that thermal head A1 is used for being supplied between this thermal head A1 and impression cylinder opposed with it (diagram slightly) prints.Printed medium 8 uses such as heat-sensitive paper.In addition, in FIG, protective layer 7 is eliminated.

Controlling organization 5 has three drive IC 51,52,53 arranged in the x-direction.In FIG, these drive IC 51,52,53 represented by dashed line.

Substrate 1, for overlooking the tabular of long rectangle, is formed by such as aluminium oxide ceramics.X direction shown in Fig. 1 is the length direction of substrate 1, and y direction is width.In addition, the z direction shown in Fig. 2 is the thickness direction of substrate 1.The thickness of substrate 1 is be such as 1mm.In explanation afterwards, with the face of upside in the z directional diagram of the substrate 1 in Fig. 2 for surface.Glaze layer 2 is formed on the surface of substrate 1.In addition, x direction is equivalent to the first direction in the claims in the present invention, and y direction is equivalent to the second direction in the claims in the present invention.

Glaze layer 2 is glass system, is formed in the mode on the surface of covered substrate 1.This glaze layer 2 is for providing the even surface being applicable to arranging electrode layer 3, heating resistor 4 and controlling organization 5.The thickness of glaze layer 2 is such as 110 μm.But as shown in Figure 2, the local on the surface of glaze layer 2 is to the bulging of z direction.The part of this bulging is set to bulge 21.

Glaze layer 2 is formed electrode layer 3.Electrode layer 3, for being energized to heating resistor 4, possesses public electrode distribution 31, multiple single electrode distribution 32, distribution group 33 and outside terminal for connecting group 34.Such as, thickness is 1.7 μm to electrode layer 3, is formed by organic gold compound (organogold compound).

Fig. 3 is the figure of the local of the part overlapping with bulge 21 when seeing in z direction that Watch with magnifier is shown in thermal head A1.In addition, in figure 3, protective layer 7 is eliminated.As shown in Figure 3, public electrode distribution 31 possesses the multiple strap 311 extended in the y-direction.Multiple strap 311 arranges in the x-direction.These strap 311 connect at root.In the example shown in Fig. 2 and Fig. 3, be provided with auxiliary electrode layer 35 in the mode of the root covering multiple strap 311.This auxiliary electrode layer 35 such as, is silvery, establishes for reducing resistance.

Multiple single electrode distribution 32 is to leave public electrode distribution 31 and auxiliary electrode layer 35 and the mode mutually left arranges in the x-direction.Each single electrode distribution 32 is formed as the band shape extended in the y-direction.In explanation afterwards, with upper end in the Fig. 1 in the y direction of each single electrode distribution 32 for leading section 321, with bottom in Fig. 1 for terminal part 322.As shown in Figure 3, stagger mutually with strap 311 side by side in the leading section 321 of multiple single electrode distribution 32.In addition, the terminal part 322 of each single electrode distribution 32 is connected with controlling organization 5.

Distribution group 33 is formed in the mode left with public electrode distribution 31 and each single electrode distribution 32.Controlling organization 5 is mainly connected with outside terminal for connecting group 34 by distribution group 33.Outside terminal for connecting group 34 is for being connected with the supply unit etc. of outside by thermal head A1 and the part that uses.In the example depicted in figure 1, outside terminal for connecting group 34 comprises z direction and sees the multiple outside terminal for connecting formed rectangular-shapedly.

Fig. 5 is the figure of the electrode layer 3 of the oblique line portion Sa shown in Watch with magnifier diagram 1.Fig. 7 is the figure of the electrode layer 3 of the oblique line portion Sb shown in Watch with magnifier diagram 1.In Fig. 5 and Fig. 7, eliminate protection resin 6 for convenience of explanation.In addition, in Fig. 5 and Fig. 7, represent the drive IC 52 configured in the mode overlapping with electrode layer 3 with double dot dash line.

As shown in Figure 5, each single electrode distribution 32 possesses the width in 32a, x direction, the bandpass portion wide width part 32b wider than bandpass portion 32a.The major part of each single electrode distribution 32 is made up of bandpass portion 32a.Part not overlapping with controlling organization 5 when wide width part 32b sees in the z direction be arranged in the local of terminal part 322.In the example as shown in fig. 5, in adjacent single electrode distribution 32A, 32B, the position of wide width part 32b is configured to stagger in y direction.The wide width part 32b of single electrode distribution 32B is arranged in the front (Fig. 5 top) more leaning on y direction than the wide width part 32b of single electrode distribution 32A.The wide width part 32b of single electrode distribution 32A is not overlapping when x direction is seen with the wide width part 32b of single electrode distribution 32B.According to this configuration, when x direction is seen, narrower when the interval in the x direction of single electrode distribution 32A, 32B can be made more overlapping than wide width part 32b, distribution density can be improved.

In addition, as shown in figure 5 and figure 7, the region of the least significant end of the terminal part 322 of each single electrode distribution 32 extends to part overlapping with drive IC 52 when z direction is seen.When the z direction of each single electrode distribution 32 is seen, with the region overlapping with drive IC 52 for connecting portion 325.The connecting portion 325 that is connected to of drive IC 52 and each single electrode distribution 32 carries out.

As shown in Figure 5 and 7, distribution group 33 possesses the multiple Wiring patterns 331,332,333,334,335,336 leaving each single electrode distribution 32.Distribution group 33 also leaves public electrode distribution 31 and auxiliary electrode layer 35.In the example shown in Fig. 5 and Fig. 7, Wiring pattern 331,332,333,334,335,336 all possesses region overlapping with drive IC 52 when z direction is seen.Wiring pattern 331,332,333,336 is connected with outside terminal for connecting group 34 outside the region shown in Fig. 5 with Fig. 7.

Wiring pattern 331 such as, for supplying voltage-to-ground to drive IC 52.When z direction is seen, be formed as overlapping with ora terminalis lower in the Fig. 5 in the y direction of drive IC 52.

Wiring pattern 332,333,334,335 such as, for supplying control signal to controlling organization 5.Wiring pattern 332 reaches the position overlapping when z direction is seen with drive IC 53 in the scope extension shown in Fig. 7.As shown in Figure 7, Wiring pattern 333 extends to right-hand member in the figure in the x direction of drive IC 52 when z direction is seen.As shown in Figure 5, Wiring pattern 334 has the part overlapping with left end in the figure in the x direction of drive IC 52 when z direction is seen.Wiring pattern 334 extends to the position overlapping when z direction is seen with drive IC 51 outward further in the scope shown in Fig. 5.As shown in Figure 7, Wiring pattern 335 has part overlapping with right-hand member in the figure in the x direction of drive IC 52 when z direction is seen.Wiring pattern 335 reaches the position overlapping when z direction is seen with drive IC 53 in the scope extension shown in Fig. 7.

Wiring pattern 336 such as, for supplying driving voltage to controlling organization 5.In addition, this driving voltage is supplied to single electrode distribution 32 by controlling organization 5.Wiring pattern 336 be formed as in y-direction than Wiring pattern 332,333,334,335 wider.As shown in Figure 5, Wiring pattern 336 extends left from the figure in the x direction of drive IC 52.Wiring pattern 336 is via right break-through in the Fig. 7 in the lower side direction x direction in the z direction of drive IC 52.Wiring pattern 336 reaches the position overlapping when z direction is seen with drive IC 51,52 in the scope extension shown in Fig. 5 and Fig. 7.

In addition, in the present embodiment, as shown in figure 5 and figure 7, electrode layer 3 possesses the isolated portion 337 leaving each single electrode distribution 32 and distribution group 33.Public electrode distribution 31 and auxiliary electrode layer 35 also leave in this isolated portion 337.

Heating resistor 4 is pyrotoxins of thermal head A1.Heating resistor 4 is set to the band shape extended in the x-direction, is formed on bulge 21.When public electrode distribution 31 is energized with any single electrode distribution 32, in heating resistor 4, the region be clipped between strap 311 and leading section 321 generates heat partly.The driving voltage that above-mentioned Wiring pattern 336 supplies is for producing potential difference and the voltage given from outside between single electrode distribution 32 and public electrode distribution 31.

Controlling organization 5, by being energized with heating resistor 4 via public electrode distribution 31 and multiple single electrode distribution 32, carries out the drived control for making heating resistor 4 local pyrexia.Therefore, each drive IC 51,52,53 is built-in with multiple semiconductor element respectively.

In the present embodiment, drive IC 51,52,53 is same parts, and only setting position is different.Drive IC 52 is described, omits the explanation to drive IC 51,53.

Such as, x direction is of a size of 9.37mm to drive IC 52, and y direction is of a size of 0.53mm, and z direction is of a size of 0.30mm, is formed as rectangular-shaped to be length direction elongated in x direction.

The bottom surface 52a of drive IC 52 that what Fig. 4 represented is.In addition, the bottom surface 52a of drive IC 52 is the faces with the opposing surface of substrate 1, is the end face close to substrate 1 on the z direction of drive IC 52.As shown in Figure 4, multiple first liners (pad) 501 arranged in the x-direction are provided with at the bottom surface 52a of drive IC 52.When multiple first liner 501 is seen with x direction, overlapped mode is arranged in row.The mode that the row that multiple first liner 501 is formed extend with the ora terminalis of a side in the y direction along drive IC 52 (in Fig. 4 below) configures.Multiple first liner 501, such as every 60 μm are provided with one.Such as, x direction is of a size of 42.0 μm to first liner 501, and y direction is of a size of 67.0 μm.The region being arranged with multiple first liner 501 is set to join domain 501A.About drive IC 51,53, also join domain 501A can be specified.Multiple single electrode distribution 32 is formed as in any region that whole terminal parts 322 is accommodated in three join domain 501A.

As shown in Figure 5, each first liner 501 is overlapping when z direction is seen with the connecting portion 325 of single electrode distribution 32 respectively.Therefore, with connecting portion 325 in the x-direction every 60 μm and the mode showing forms electrode layer 3 in advance.In addition, in the present embodiment, the y direction width of connecting portion 325 is formed as such as 35 μm.

Fig. 9 and Figure 10 is the figure amplifying expression first liner 501.In order to simplify, in fig .9, glaze layer 2 and protection resin 6 is eliminated.

As shown in Figure 9, the first liner 501 has Rotating fields.In the example shown in Fig. 9, the first liner 501 possess be laminated in the z-direction ground floor 511, the second layer 512, third layer 513 and the 4th layer 514.Such as, titanium system, thickness is about 40nm to ground floor 511.Ground floor 511 such as engages with the interior semiconductor element being loaded on drive IC 52.The second layer 512 contacts with ground floor 511, and such as, titanium nickel system, thickness is about 100nm.Third layer 513 contacts with the second layer 512, and such as, take aluminium as principal component, thickness is about 400nm.Contacting with third layer 513 for 4th layer 514, such as, is titanium system, and thickness is about 40nm.

Each first liner 501 is connected with the interior semiconductor element being loaded on drive IC 52 respectively.As shown in Figure 4, when making the first liner 501 fitly be configured to row in the x-direction, more efficiently can carry out the configuration of the semiconductor element in drive IC 52.

As shown in Figure 4, be provided with at the bottom surface 52a of drive IC 52 multiple second liners 502 arranged in the x-direction in the mode parallel with the row of multiple first liner 501.Multiple second liner 502 is arranged in row in the mode overlapped when x direction is seen.The row that multiple second liner 502 is formed are arranged in the position of close the opposing party (Fig. 4 top) ora terminalis in the y direction of drive IC 52.The second adjacent liner 502 interval is each other longer than the first adjacent liner 501 interval each other.Because the interval in x direction is longer, therefore the x direction size of each second liner 502 is longer than the x direction size of the first liner 501.

As shown in figure 5 and figure 7, each second liner 502 is overlapping with Wiring pattern 331 when z direction is seen.Therefore, each second liner 502 is for supplying voltage-to-ground to the semiconductor element in drive IC 52.

Each second liner 502 is connected with the interior semiconductor element being loaded on drive IC 52 respectively.As shown in Figure 4, when making the second liner 502 fitly be configured to row in the x-direction, more efficiently can carry out the configuration of the semiconductor element in drive IC 52.

In addition, multiple 3rd liner 503a, 503b is provided with at the both ends in the x direction of the bottom surface 52a of drive IC 52.In the example shown in Figure 4, multiple 3rd liner 503a, 503b is configured at the region not overlapping with join domain 501A when y direction is seen.Therefore, multiple 3rd liner 503a, 503b is not overlapping with multiple first liner 501 when y direction is seen.

Each 3rd liner 503a, 503b is connected with the interior semiconductor element being loaded on drive IC 52 respectively.In one example in which, different with the semiconductor element being connected to the first liner 501 from the semiconductor element that the 3rd liner 503a connects.When the central portion in the x direction of drive IC 52 is provided with the semiconductor element be connected with the first liner 501, other semiconductor element is configured at the both ends in the x direction of drive IC 52.In this case, simplifying in the connecting structure in drive IC 52, preferably the 3rd liner 503a is arranged at the both ends in the x direction of bottom surface 52a.

As shown in figure 5 and figure 7, each 3rd liner 503a is overlapping with any one in Wiring pattern 333,334,335 when z direction is seen and in distribution group 33.Each 3rd liner 503a is used for the semiconductor element transfer control signal in drive IC 52.

As shown in Figure 5, each 3rd liner 503b is overlapping with Wiring pattern 336.Each 3rd liner 503b is used for the semiconductor element supply control voltage in drive IC 52.

As shown in Figure 4, multiple 4th liner 504 is provided with at the bottom surface 52a of drive IC 52.4th liner 504 such as, for checking drive IC 52 whether regular event and establishing.Therefore, even if do not make the 4th liner 504 be connected with electrode layer 3, drive IC 52 also normally works.

In the present embodiment, as shown in figure 5 and figure 7, when z direction is seen, the 4th liner 504 and isolated portion 337 configure in an overlapping manner.

As shown in Figure 6 and Figure 8, thermal head A1 possesses the multiple conductive components 521,522,523,524 mutually left when z direction is seen between controlling organization 5 and substrate 1.Multiple conductive component 521,522,523,524 is the projection (bump) of gold system.The thickness in the z direction of multiple conductive component 521,522,523,524 is such as 15 μm.Multiple conductive component 521 is connected with multiple first liner 501 respectively.In addition, each conductive component 521 contacts with connecting portion 325.Like this, the first liner 501 and the connecting portion 325 opposed with the first liner 501 connect by multiple conductive component 521 respectively.As shown in Figure 9, the part contacted with the first liner 501 of conductive component 521 is formed as shorter than other parts in y-direction.As shown in Figure 10, conductive component 521 is for seeing long rectangle in z direction, and its entirety is formed in the mode of the inner side being included in the first liner 501.The z direction of conductive component 521 sees that shape is less than the first liner 501, and x direction is of a size of 35 μm, and y direction is of a size of 60 μm.In addition, the y direction size of conductive component 521 is identical with the y direction width of connecting portion 325, and connecting portion 325 and conductive component 521 are well turned up the soil overlap in y-direction.

Multiple conductive component 522 is connected with any one in multiple second liner 502 respectively.Each conductive component 522 configures in the mode of the inner side being positioned at each second liner 502 when z direction is seen.As mentioned above, Wiring pattern 331 is formed with in the mode overlapping with the second liner 502.Multiple conductive component 522 all contacts with Wiring pattern 331, and the second liner 502 is via multiple conductive component 522 and Wiring pattern 331 conducting.The z direction of conductive component 522 sees that shape such as, is the square of the length of side 70 μm.

Multiple conductive component 523 is connected with any one in multiple 3rd liner 503a, 503b respectively.Each conductive component 523 configures in the mode of the inner side being positioned at each 3rd liner 503a, 503b when z direction is seen.As mentioned above, be formed with Wiring pattern 333,334,335 in the mode overlapping with each 3rd liner 503a, be formed with Wiring pattern 336 in the mode overlapping with each 3rd liner 503b.3rd liner 503a via conductive component 523 and Wiring pattern 333,334,335 conducting, the 3rd liner 503b and Wiring pattern 336 conducting.The z direction of conductive component 523 see shape be long limit be 80 μm and minor face to be the length of 70 μ rn rectangular-shaped, x direction size and to overlook size larger than conductive component 521.

In addition, in the present embodiment, conductive component 524 is connected with at the 4th liner 504.Conductive component 524 configures in the mode of the inner side being positioned at the 4th liner 504 when z direction is seen.As mentioned above, the 4th liner 504 is overlapping with isolated portion 337 when z direction is seen, the conductive component 524 therefore connected with the 4th liner 504 contacts with isolated portion 337.

In the present embodiment, by the method shown in manufacture method described later, multiple conductive component 521 engages with the connecting portion 325 that will contact respectively.Equally, multiple conductive component 522 engages with Wiring pattern 331, and multiple conductive component 523 engages with the Wiring pattern 333,334,335,336 that will contact respectively.The conductive component 524 be connected with the 4th liner 504 also engages with isolated portion 337.

Protection resin 6 possesses protection resin 61,62,63.Drive IC 51 is covered by protection resin 61.Drive IC 52 is covered by protection resin 62.Drive IC 53 is covered by protection resin 63.Protection resin 61,62,63 such as, is black resin, prevents the misoperation that the light of the damage of drive IC 51,52,53 and ultraviolet etc. causes.

As shown in Figure 6, resin 6 is protected also to possess sealing resin 60.Sealing resin 60 take epoxy resin as principal component, is formed in the mode between landfill drive IC 52 and glaze layer 2.As shown in Figure 6, sealing resin 60 has in the both sides, y direction of drive IC 52 the rake 60a more leaving drive IC 52 in z direction close to substrate 1 more in y-direction.In addition, driving 1C51, between 52 and glaze layer 2, be also formed with the resin identical with sealing resin 60.

Protective layer 7 contacts with printed medium 8, for the protection of part easy to wear.As shown in Figure 2, protective layer 7 is formed in the mode making the local of multiple single electrode distribution 32 and expose.The exposed portion of multiple single electrode distribution 32 is connected with any one in drive IC 51,52,53.Protective layer 7 is formed by the suitable raw material being selected from such as glass, sialon, tantalum nitride, carborundum.

Then, be described with reference to the manufacture method of Figure 11 ~ Figure 15 to thermal head A1.

When manufacturing thermal head A1, first, form the operation of glaze layer 2 on substrate 1.The operation forming glaze layer 2 is undertaken by such as glass paste (glass paste) printing is coated substrate 1 and made it burn till.

Then, the operation forming electrode layer 3 on glaze layer 2 is carried out.The operation forming electrode layer 3 is undertaken by such as printing the slurry containing organic gold compound and make it burn till on glaze layer 2.In addition, be not limited to the method, such as, also obtain desired Wiring pattern by electroplating processes.

In addition, after formation electrode layer 3, auxiliary electrode layer 35 is formed.This operation is undertaken by printing silver paste in desired region and make it burn till.

In addition, after formation electrode layer 3, preferably carry out the inspection of multiple single electrode distribution 32 whether mutually insulated.By such as making needle-like check, utensil contacts with each single electrode distribution 32 this Inspection carries out.Now, by making inspection utensil contact with the wide width part 32b being arranged at each single electrode distribution 32, Inspection can be carried out with comparalive ease.This Inspection is not detected that bad goods carry out later process.

What Figure 11 represented is the state being formed with electrode layer 3 on glaze layer 2.Region shown in Figure 12 is the predetermined region arranging drive IC 52.

In addition, the operation connecting multiple conductive component 521,522,523,524 at controlling organization 5 is carried out.In addition, because the process carried out each drive IC 51,52,53 is identical, therefore, process is carried out to drive IC 52 and be described.The operation that drive IC 52 is carried out also is carried out drive IC 51,53.

First, the operation of the coating parts 500 forming the bottom surface 52a covering drive IC 52 is carried out.Whole opening 500a exposed of the first ~ four liner 501,502,503,504 making to be arranged at drive IC 52 are formed at these coating parts 500.In fig. 12, as an example, represent the opening 500a that the first liner 501 is exposed.As shown in figure 12, step is provided with in the bottom (in figure upside) of opening 500a.

Then, carry out implementing gold-plated process to the bottom surface 52a of drive IC 52.As mentioned above, the state that bottom surface 52a covers for coating parts 500, is therefore formed gold-plated in the part exposed because of opening 500a.That is, the first ~ four liner 501,502,503,504 is formed by the process of the gold-plated projection formed.The projection now formed is multiple conductive components 521,522,523,524.According to this manufacture method, multiple conductive component 521,522,523,524 is formed with the state linked together with the first ~ four liner 501,502,503,504 respectively.In addition, the corresponding relation of conductive component the 521,522,523,524 and first ~ four liner 501,502,503,504, as shown in the explanation formed, therefore omits the description.

After drive IC 52 is formed with multiple conductive component 521,522,523,524, carry out operation drive IC 52 being fixed on substrate 1.In this operation, first, as shown in figure 13, the mode abutted with multiple connecting portion 325 with multiple conductive component 521 arranges drive IC 52.As mentioned above, multiple first liner 501 and multiple connecting portion 325 are arranged with same interval in the x-direction.Each conductive component 521 is connected with any one in multiple first liner 501, therefore abuts with each conductive component 521 and each connecting portion 325.In this operation, meanwhile, multiple conductive component 522 abuts with Wiring pattern 331.Multiple conductive component 523 abuts with Wiring pattern 333,334,335,336.Multiple conductive component 524 abuts with isolated portion 337.

Next, the operation multiple conductive component 521,522,523,524 and the electrode layer 3 that abuts with it engaged is carried out.This operation is undertaken by such as ultrasonic bonding.Under the state shown in Figure 13, the weight of drive IC 52 puts on each portion of electrode layer 3 via multiple conductive component 521,522,523,524.In this condition, when applying ultrasonic wave vibration to drive IC 52 further, its vibration is just delivered to multiple conductive component 521,522,523,524, adding by vibrational energy, and each portion of multiple conductive component 521,522,523,524 and electrode layer 3 engages.Engaged with each portion of electrode layer 3 by multiple conductive component 521,522,523,524, drive IC 52 is fixed on substrate 1.

Under the state that drive IC 52 has been fixed on substrate 1, carry out checking drive IC 52 and electrode layer 3 whether by the predetermined and operation of conducting.By such as making needle-like check, utensil contacts with each single electrode distribution 32 this Inspection carries out.Now, by making inspection utensil contact with the wide width part 32b being arranged at each single electrode distribution 32, Inspection can be carried out with comparalive ease.This Inspection is not detected that bad goods carry out later process.In addition, wide width part 32b is arranged at position not overlapping with controlling organization 5 when z direction is seen, this is to more easily carry out this inspection operation.

Then, the operation forming sealing resin 60 is carried out.In this operation, the substrate 1 obtained by above-mentioned operation is placed under vacuum conditions.As shown in figure 14, thereon and aqueous resin material 60A is set in drive IC 52 side.Resin material 60A along the y direction of drive IC 52 the ora terminalis (in Figure 14 left end edge) leaving heating resistor 4 and arrange.Like this, resin material 60A penetrates between drive IC 52 and glaze layer 2, arrives the ora terminalis close to heating resistor 4 (in Figure 14 right-hand member edge) in the y direction of drive IC 52.Resin material 60A for being such as added with the material of the fillers such as phenolic resins system curing agent, acid anhydrides system curing agent, curing accelerator, silicones system modifier, diethyl carbitol (diethylene glycol diethyl ether), silica in bisphenol-type epoxy resin.This resin material 60A is passed through by the time and solidifies.The state that what Figure 15 represented is after resin material 60A solidifies.Resin material 60A becomes sealing resin 60 after solidifying.

When carrying out manufacture method as above, the both side edges in the y direction of sealing resin 60 forms rake 60a.

Thereafter, by covering drive IC 52 with epoxy resin further, forming protection resin 62, manufacturing thermal head A1 as shown in Figure 6.

Then, the effect of thermal head A1 is described.

In above-mentioned thermal head A1, the connecting portion 325 of each single electrode distribution 32 extends to the position overlapping with drive IC 52 when z direction is seen.The drive IC 52 of thermal head A1 and the connection of each single electrode distribution 32 are carried out via connecting portion 325.In order to realize this connection, multiple first liners 501 are arranged at the bottom surface 52a of drive IC 52.Each first liner 501, owing to being positioned at the position overlapping with each connecting portion 325 when z direction is seen, therefore when both being connected, uses the necessity of electric wire low.Shown in embodiment described above, be rational by being connected by the gold-plated multiple conductive components 521 formed.Like this, in thermal head A1, different from existing situation, do not use electric wire just drive IC 52 can be connected with each single electrode distribution 32.By not using electric wire, as long as protection resin 6 covers the surface of drive IC 52.Therefore, thermal head A1 possesses the formation of the thickness that can suppress the z direction protecting resin 6.By suppressing the thickness of protection resin 6, thermal head A1 can eliminate the loose contact of impression cylinder as described in existing explanation and printed medium 8.

As shown in existing explanation, when utilizing electric wire drive IC to be connected with single electrode distribution, assuming that electric wire is extended when being connected with metal level by electric wire.Therefore, single electrode distribution interval each other needs to have surplus.But, if adopt the formation not using electric wire as thermal head A1, then do not need that there is that surplus.Therefore, in thermal head A1, single electrode distribution interval each other can be made narrower than existing.When reducing single electrode distribution interval each other, such as, more single electrode distribution can be formed in same substrate.By increasing single electrode distribution, such as, the raising of definition can be realized.

In addition, in thermal head A1, the conducting of multiple second liner 502 and Wiring pattern 331 is also by being undertaken by the gold-plated multiple conductive components 522 formed.In addition, the conducting of multiple 3rd liner 503a and Wiring pattern 333,334,335 and the conducting of multiple 3rd liner 503b and Wiring pattern 336 are also by being undertaken by the gold-plated multiple conductive components 523 formed.Therefore, thermal head A1 become with the connection of electrode layer 3 on do not need the formation of electric wire completely.Preferred this formation in the thickness suppressing protection resin 6.

In addition, according to above-mentioned manufacture method, in thermal head A1, multiple conductive component 521,522,523,524 engages with the electrode layer 3 abutted respectively.Therefore, in the fabrication process, can prevent the position of drive IC 52 from departing from.When drive IC 52 is set to depart from preposition, such as, the first liner 501 and the conducting of unscheduled single electrode distribution 32 will be there is.But, according to above-mentioned manufacture method, that problem can be prevented trouble before it happens.

As shown in Figure 4, the drive IC 52 of thermal head A1 is the shape that x direction is grown.Multiple first liner 501 and multiple second liner 502 are to arrange along the length direction of drive IC 52 and the mode of x direction formation row.In addition, the row of multiple first liner 501 formation and the row of multiple second liner 502 formation configure in the mode left in the y-direction.Thisly be configured in above-mentioned manufacture method, when drive IC 52 is arranged at substrate 1, be applicable to preventing drive IC 52 from tilting.

In addition, in the present embodiment, with conductive component 524, the 4th liner 504 is connected with isolated portion 337.Therefore, junction increases, and drive IC 52 engages with electrode layer 3 more strongly.

In thermal head A1, the z direction of the second liner 502 that the size seen with z direction is larger than the first liner 501 and the conductive component 522,523 that the 3rd liner 503 is connected sees that size is formed as larger than conductive component 521.When multiple conductive component 521, need single electrode distribution 32 conducting each other preventing from adjoining, therefore preferably avoid becoming excessive shape.On the other hand, in conductive component 522,523, do not have that situation, the size that therefore z direction can be made to see is larger.As mentioned above, multiple conductive component 521,522,523,524 not only realizes the conducting of drive IC 52 and electrode layer 3, but also plays the effect of fixed drive IC52.Therefore, the z direction strengthening conductive component 522,523 sees that area can expect favourable effect in fixed drive IC52.

In addition, in thermal head A1, the Wiring pattern 336 of y direction wider width configures in the mode overlapping with drive IC 52 when z direction is seen.Wiring pattern 336, for supplying driving voltage to controlling organization 5, can not omit, and is preferably formed wider width.When this Wiring pattern 336 being configured in position not overlapping with drive IC 52 when z direction is seen, the width in the y direction of substrate 1 must be widened.In other words, above-mentioned formation is the formation of the width in the y direction easily reducing substrate 1, and is the formation being applicable to the miniaturization realizing thermal head A1.

In addition, according to above-mentioned manufacture method, between drive IC 52 and glaze layer 2, be formed with sealing resin 60.Sealing resin 60 prevents foreign matter from entering between drive IC 52 and glaze layer 2, and more strong ground fixed drive IC52.

In the present embodiment, controlling organization 5 is made up of three drive IC 51,52,53 left in the x-direction.Although also can by single drive IC formation control mechanism 5, in this case, the quantity of multiple first liners 501 arranged side by side in the x-direction can increase widely.Now, be sometimes difficult to multiple first liner 501 all critically to engage with connecting portion 325.In order to alleviate this risk, in the present embodiment, controlling organization 5 is formed by three drive IC 51,52,53.

In existing thermal head, when drive IC is connected with single electrode distribution by Live wires, being often partially formed under drive IC of Wiring pattern.In that case, normally on distribution, form smooth glassy layer, and on its glassy layer the bottom surface of fixed drive IC.In thermal head A1, as mentioned above, what adopt is be connected with multiple conductive component 521,522,523,524 on the first ~ four liner 501,502,503,504 of the bottom surface 52a being arranged at drive IC 52, and these conductive components 521,522,523,524 are fixed on the structure of electrode layer 3.According to this structure, do not need on glaze layer 2, to form glassy layer for supporting drive IC 52 further.This just can expect the effect of the number of components reducing thermal head A1.In addition, also preferred in the thickness in z direction suppressing protection resin 6.

What Figure 16 ~ Figure 21 represented is other embodiment of the present invention.In addition, in these figures, for element same or similar with above-mentioned embodiment, the symbol identical with above-mentioned embodiment is paid.

The thermal head that what Figure 16 represented is based on second embodiment of the invention.The formation of the thermal head A2 of present embodiment mainly single electrode distribution 32 is different from above-mentioned embodiment.In the present embodiment, the connecting portion 325 of single electrode distribution 32 is formed by ground floor 325a and second layer 325b.The thickness of connecting portion 325 be about 2 μm of degree or its below.In the present embodiment, in single electrode distribution 32, connecting portion 325 is formed by ground floor 325a and second layer 325b, and in single electrode distribution 32, the position beyond connecting portion 325 is only formed by ground floor 325a.But, also can adopt the structure that single electrode distribution 32 entirety is formed by ground floor 325a and second layer 325b.By the double-layer structural that to be set to ground floor 325a by connecting portion 325 be basalis, the patterning for the formation of connecting portion 325 more correctly can be carried out.The x direction size of connecting portion 325 and conductive component 521 is all about 35 μm.

Ground floor 325a is formed on glaze layer 2, is set to the layer of smoother cross sectional shape.As the principal component of ground floor 325a, such as, organic gold compound is enumerated.The thickness of ground floor 325a is such as about 0.6 μm.Ground floor 325a is burnt till to be formed after passing through such as to be printed with the slurry containing organic gold compound on glaze layer 2.In figure 16, represent that ground floor 325a is relative to the formation of glaze layer 2 sedimentation in this sintering process, but this is an example.Sometimes ground floor 325a is relative to glaze layer 2 not sedimentation.In addition, as shown in figure 16, ground floor 325a and second layer 325b also forms obvious interface sometimes, but does not sometimes also form this obvious interface.In this case, ground floor 325a and second layer 325b such as, when observing cutting plane, as outward appearance, can think one deck.

Second layer 325b has and is layered on ground floor 325a and at least coarse than ground floor 325a surface.The connecting portion 325 that what Figure 17 represented is before engaging with conductive component 521.As shown in FIG. 16 and 17, the surface of second layer 325b is significant concaveconvex shape.The surface of this concaveconvex shape is by such as distributing brokenly with fine gold particle and state of erecting of its local and fixedly realizing.Second layer 325b contains the gold as principal component, in addition, also containing glass.The Thickness Ratio ground floor 325a of second layer 325b is thick, such as, and about 1.1 μm.

In the formation of this second layer 325b, use the slurry such as containing fine gold particle and glass and the resin as solvent.Define the substrate that becomes ground floor 325a containing the layer gold of organic gold after, the slurry of printing containing fine gold particle and glass in this layer gold.Then, when burning till this slurry, the resin as solvent got involved between fine gold particle disappears, and in addition, the glass of intervention moves to below.Thus, obtain distributing brokenly with fine gold particle and its state of erecting of local and fixing layer gold.After this, by the above-mentioned layer gold containing organic gold and the layer gold embodiment containing fine gold particle as the patterning of etching, single electrode distribution 32 can be obtained.

State before drive IC that what Figure 18 represented is 52 and substrate 1 (in detail in this figure, illustrate summary) engage.As shown in the figure, in the present embodiment, the x direction size W2 of the conductive component 521 before joint is less than the x direction size W1 of connecting portion 325, such as, is 25 μm of degree.

Next, as shown in figure 19, drive IC 52 is declined, and conductive component 521 is abutted with connecting portion 325.In addition, give downward power in the z-direction to drive IC 52, and apply ultrasonic wave vibration.In the present embodiment, the direction of vibration of this ultrasonic wave vibration is x direction.By the operation that this is ultrasonic bonding, conductive component 521 and connecting portion 325 ultrasonic bonding.The ultrasonic wave that it is direction of vibration that conductive component 521 passes through to be subject to x direction vibrates while pressurized, and x direction size is than slightly large before joint.In the present embodiment, the x direction of the conductive component 521 after joint is of a size of about 35 μm, roughly the same with connecting portion 325.

In addition, the second layer 325b due to connecting portion 325 is concaveconvex shape, and therefore upon engagement, the upper part becoming second layer 325b enters the form of the end portion of conductive component 521.In addition, by concavo-convex degree and the ultrasonic bonding engaging condition of second layer 325b, between second layer 325b upon engagement and conductive component 521, fine gap can be produced.Therefore, as shown in figure 16, the formation between second layer 325b and conductive component 521 is got involved in the local that can become only sealing resin 60.The sealing resin 60 of this intervention, owing to not getting involved throughout the whole region of second layer 325b and conductive component 521, therefore can not hinder the conducting of second layer 325b and conductive component 521.In addition, by concavo-convex degree and the ultrasonic bonding engaging condition of second layer 325b, also can avoid producing gap between second layer 325b and conductive component 521 and sealing resin 60 is got involved.

According to the present embodiment, in ultrasonic bonding, give to the drive IC 52 that length direction is x direction the ultrasonic wave vibration that direction of vibration is x direction.By adopting this direction of vibration, there is the advantage easily making drive IC 52 stable vibration and so on.Such as, different from present embodiment, when giving direction of vibration to drive IC 52 and being the ultrasonic wave vibration in y direction, the possibility that drive IC 52 swings centered by the axle extended in the x-direction is large.When conductive component 521 rubs with connecting portion 325 because of this swing, below conductive component 521, become the convex surface of slightly bulging below z direction.Become the conductive component 521 with this convex surface and can not expect the suitable joint with connecting portion 325.According to the present embodiment, direction of vibration is the length direction of drive IC 52, and drive IC 52 is difficult to swing.Therefore, it is possible to prevent conductive component 521 from becoming shape improperly because swinging the friction that brings, suitably can engage relative to connecting portion 325.

Although the direction of vibration of ultrasonic wave vibration is x direction, row will be configured in the x-direction by multiple connecting portion 325.The number of stacked wiring layer is cut down in the inside that this formation is adapted at drive IC 52.The abatement of distribution number contributes to the cost reduction of drive IC 52.

Be there is by connecting portion 325 second layer 325b of concaveconvex shape, can realize making connecting portion 325 enter the engaged configuration of conductive component 521.This engaged configuration is applicable to the bond strength improving connecting portion 325 and conductive component 521.

Under state before joint, it is less than the x direction size W1 of connecting portion 325 by the x direction size W2 of conductive component 521 is set to, even if give to drive IC 52 the ultrasonic wave vibration that direction of vibration is x direction, conductive component 521 also can be suppressed to expose significantly from connecting portion 325.This avoid causing adjacent single electrode distribution 32 each other in short circuit preferably.In addition, upon engagement, conductive component 521 is roughly the same with the x direction size of connecting portion 325, is applicable to making each other reliably conducting.

What Figure 20 and Figure 21 represented is the 3rd embodiment of the present invention.In the thermal head A3 of present embodiment, the shape of sealing resin 60 is different from the first above-mentioned embodiment.In addition, as connecting portion 325 and conductive component 521, even the arbitrary formation in first and second above-mentioned embodiment, thermal head A3 can adopt.In addition, as sealing resin 60, even the arbitrary formation in the first above-mentioned embodiment and present embodiment, the thermal head A2 of the second above-mentioned embodiment can adopt.

In the present embodiment, the inferior portion of the side 52b towards y direction of sealing resin 60 pairs of drive IC 52 and these two sides of 52b, side towards x direction covers, and their upper portion is exposed.Described in first embodiment described above, the formation of this sealing resin 60 is formed to inject between drive IC 52 and substrate 1 along the mode such as towards the side 52b in y direction by the fluid resin material 60A of the material by becoming sealing resin 60.

According to this embodiment, the bond strength of drive IC 52 and substrate 1 can be improved further.Particularly, because drive IC 52 is the shape extended in the x-direction, therefore when the use of thermal head A3, such as, the such thermal deformation of substrate 1 is left at the two ends, x direction easily producing drive IC 52.In sealing resin 60, coverage rate is applicable to preventing from causing drive IC 52 to depart from substrate 1 because of the thermal deformation of this drive IC 52 to the part of the side 52b in x direction.

Scope of the present invention is not limited to above-mentioned embodiment.The concrete formation of the manufacture method of thermal head of the present invention and thermal head be all design alterations freely.Such as, electrode layer 3 can utilize the such as metal wiring such as aluminum wiring and silver-colored distribution to replace.In addition, in the above-described embodiment, by ultrasonic bonding, drive IC 52 is fixed on substrate 1, but this only preferred example.When drive IC 52 is fixed on substrate 1, the installation method of other flip-chip (flip chip) also can be utilized.

Claims (62)

1. a thermal head, is characterized in that, comprising:
Substrate;
Heating resistor, it is arranged at the side of the thickness direction of aforesaid substrate;
Electrode layer, its be arranged at the thickness direction of aforesaid substrate side and with described heating resistor conducting; With
Controlling organization, it is arranged at the side of the thickness direction of described substrate, wherein,
Described electrode layer has public electrode distribution, leaves and the multiple single electrode distributions mutually left from described public electrode distribution,
Connecting portion overlapping with described controlling organization when described each single electrode distribution has viewed from the thickness direction from described substrate,
Described controlling organization possesses the bottom surface opposed with the face of the side of the described thickness direction of described substrate, is arranged at multiple liners of described bottom surface,
Arbitrary connecting portion conducting in arbitrary liner in described multiple liner and multiple described connecting portion,
Described multiple connecting portion arranges along the first direction orthogonal with described thickness direction,
Described multiple liner comprises multiple first liners arranged along described first direction,
Arbitrary liner in described multiple first liner and arbitrary connecting portion conducting of described multiple connecting portion,
Viewed from described thickness direction time, described each connecting portion is overlapping with any one in described multiple first liner,
This thermal head possesses and to be clipped on described thickness direction between described controlling organization and described substrate and the multiple conductive components mutually left viewed from described thickness direction time,
Described multiple conductive component comprises the first conductive component all contacted with the arbitrary connecting portion both sides in described multiple connecting portion with the arbitrary liner in described multiple first liner.
2. thermal head as claimed in claim 1, is characterized in that:
Described multiple first liner configures in overlapped mode viewed from described first direction time.
3. a thermal head, is characterized in that, comprising:
Substrate;
Heating resistor, it is arranged at the side of the thickness direction of described substrate;
Electrode layer, its be arranged at the thickness direction of described substrate side and with described heating resistor conducting; With
Controlling organization, it is arranged at the side of the thickness direction of described substrate, wherein,
Described electrode layer possesses public electrode distribution, leaves and the multiple single electrode distributions mutually left from described public electrode distribution,
Described controlling organization possesses the bottom surface opposed with the face of the side of the described thickness direction of described substrate, is arranged at multiple liners of described bottom surface,
Described multiple liner comprises multiple first liners arranged along the first direction orthogonal with described thickness direction,
Any one distribution conducting at least any one liner in described multiple first liner and described multiple single electrode distribution,
Described each single electrode distribution have viewed from described thickness direction time with any one the overlapping connecting portion in described multiple first liner,
This thermal head possesses and to be clipped on described thickness direction between described controlling organization and described substrate and the multiple conductive components mutually left viewed from described thickness direction time,
Described multiple conductive component possess viewed from described thickness direction time with at least any one first conductive component be connected in described multiple first liner,
Described first conductive component abuts with described connecting portion overlapping with described first liner being connected with described first conductive component viewed from described thickness direction time.
4. thermal head as claimed in claim 3, is characterized in that:
Described multiple first liner configures in overlapped mode viewed from described first direction time.
5. thermal head as claimed in claim 3, is characterized in that:
Viewed from described thickness direction time, described first conductive component is formed in its overall mode overlapping with described first liner being connected with this first conductive component.
6. thermal head as claimed in claim 1, is characterized in that:
Described electrode layer has the distribution group left from described public electrode distribution and described multiple single electrode distribution.
7. thermal head as claimed in claim 3, is characterized in that:
Described electrode layer has the distribution group left from described public electrode distribution and described multiple single electrode distribution.
8. thermal head as claimed in claim 6, is characterized in that:
Described distribution group is formed in the mode overlapping with described controlling organization viewed from described thickness direction time.
9. thermal head as claimed in claim 7, is characterized in that:
Described distribution group is formed in the mode overlapping with described controlling organization viewed from described thickness direction time.
10. thermal head as claimed in claim 8, is characterized in that:
Described multiple single electrode distribution arranges along described first direction,
Described heating resistor is formed as the band shape extended along described first direction,
Described multiple liner comprises multiple second liner, and any one being formed in multiple first liner described in the ratio in the second direction orthogonal with described thickness direction and described first direction of described multiple second liner more leaves the position of described heating resistor,
Described distribution group comprises the first Wiring pattern with any one conducting in described multiple second liner.
11. thermal heads as claimed in claim 9, is characterized in that:
Described multiple single electrode distribution arranges along described first direction,
Described heating resistor is formed as the band shape extended along described first direction,
Described multiple liner comprises multiple second liner, and any one being formed in multiple first liner described in the ratio in the second direction orthogonal with described thickness direction and described first direction of described multiple second liner more leaves the position of described heating resistor,
Described distribution group comprises the first Wiring pattern with any one conducting in described multiple second liner.
12. thermal heads as claimed in claim 10, is characterized in that:
Described multiple conductive component comprises the second conductive component all contacted with described first Wiring pattern both sides with any one in described multiple second liner.
13. thermal heads as claimed in claim 11, is characterized in that:
Described multiple conductive component comprises the second conductive component all contacted with described first Wiring pattern both sides with any one in described multiple second liner.
14. thermal heads as claimed in claim 10, is characterized in that:
Described multiple second liner arranges along described first direction.
15. thermal heads as claimed in claim 11, is characterized in that:
Described multiple second liner arranges along described first direction.
16. thermal heads as claimed in claim 14, is characterized in that:
Described multiple second liner configures in overlapped mode viewed from described first direction time.
17. thermal heads as claimed in claim 15, is characterized in that:
Described multiple second liner configures in overlapped mode viewed from described first direction time.
18. thermal heads as claimed in claim 10, is characterized in that:
Described multiple liner is arranged at multiple 3rd liners with the described first nonoverlapping position of liner when being included in viewed from described second direction,
Described distribution group comprises the second Wiring pattern, any one conducting in described second Wiring pattern and described multiple 3rd liner, and leaves from described first Wiring pattern.
19. thermal heads as claimed in claim 11, is characterized in that:
Described multiple liner is arranged at multiple 3rd liners with the described first nonoverlapping position of liner when being included in viewed from described second direction,
Described distribution group comprises the second Wiring pattern, any one conducting in described second Wiring pattern and described multiple 3rd liner, and leaves from described first Wiring pattern.
20. thermal heads as claimed in claim 18, is characterized in that:
Described multiple conductive component comprises and any one the 3rd conductive component all contacted with described second Wiring pattern both sides in described multiple 3rd liner.
21. thermal heads as claimed in claim 19, is characterized in that:
Described multiple conductive component comprises and any one the 3rd conductive component all contacted with described second Wiring pattern both sides in described multiple 3rd liner.
22. thermal heads as claimed in claim 10, is characterized in that:
Described electrode layer has from any one the isolated portion all left described public electrode distribution, described multiple single electrode distribution and described distribution group viewed from described thickness direction time,
Described multiple liner comprises the 4th liner be connected with described isolated portion.
23. thermal heads as claimed in claim 11, is characterized in that:
Described electrode layer has from any one the isolated portion all left described public electrode distribution, described multiple single electrode distribution and described distribution group viewed from described thickness direction time,
Described multiple liner comprises the 4th liner be connected with described isolated portion.
24. thermal heads as claimed in claim 22, is characterized in that:
Described multiple conductive component comprises the 4th conductive component contacted with described 4th liner both sides with described isolated portion.
25. thermal heads as claimed in claim 23, is characterized in that:
Described multiple conductive component comprises the 4th conductive component contacted with described 4th liner both sides with described isolated portion.
26. thermal heads as claimed in claim 6, is characterized in that:
Described multiple conductive component is the projection of gold system.
27. thermal heads as claimed in claim 7, is characterized in that:
Described multiple conductive component is the projection of gold system.
28. thermal heads as claimed in claim 26, is characterized in that:
Described electrode layer is layer gold.
29. thermal heads as claimed in claim 27, is characterized in that:
Described electrode layer is layer gold.
30. thermal heads as claimed in claim 1, is characterized in that:
Described connecting portion is by ground floor and be laminated in the side contrary with described substrate relative to this ground floor and the second layer with the surface more coarse than described ground floor is formed.
31. thermal heads as claimed in claim 3, is characterized in that:
Described connecting portion is by ground floor and be laminated in the side contrary with described substrate relative to this ground floor and the second layer with the surface more coarse than described ground floor is formed.
32. thermal heads as claimed in claim 30, is characterized in that:
The described second layer comprises gold and glass.
33. thermal heads as claimed in claim 31, is characterized in that:
The described second layer comprises gold and glass.
34. thermal heads as claimed in claim 32, is characterized in that:
Described ground floor comprises organic gold compound.
35. thermal heads as claimed in claim 33, is characterized in that:
Described ground floor comprises organic gold compound.
36. thermal heads as claimed in claim 34, is characterized in that:
The described second layer is than described first thickness.
37. thermal heads as claimed in claim 35, is characterized in that:
The described second layer is than described first thickness.
38. thermal heads as claimed in claim 1, is characterized in that:
Described each single electrode distribution comprises the bandpass portion in said first direction with the first width and the wide width part in said first direction with second width longer than the first width,
Described each wide width part is formed at the position of controlling organization overlap described in Shi Buyu viewed from the thickness direction of described substrate.
39. thermal heads as claimed in claim 3, is characterized in that:
Described each single electrode distribution comprises the bandpass portion in said first direction with the first width and the wide width part in said first direction with second width longer than the first width,
Described each wide width part is formed at the position of controlling organization overlap described in Shi Buyu viewed from the thickness direction of described substrate.
40. thermal heads as claimed in claim 38, is characterized in that:
Described multiple single electrode distribution comprises the first single electrode distribution second single electrode distribution different from described first single electrode distribution with the position of wide width part viewed from described first direction time.
41. thermal heads as claimed in claim 39, is characterized in that:
Described multiple single electrode distribution comprises the first single electrode distribution second single electrode distribution different from described first single electrode distribution with the position of wide width part viewed from described first direction time.
42. thermal heads as claimed in claim 1, is characterized in that:
This thermal head possesses the sealing resin be clipped on the thickness direction of described substrate at least partially between described substrate and described controlling organization.
43. thermal heads as claimed in claim 3, is characterized in that:
This thermal head possesses the sealing resin be clipped on the thickness direction of described substrate at least partially between described substrate and described controlling organization.
44. thermal heads as claimed in claim 42, is characterized in that:
Described sealing resin is formed in the mode making the local of described controlling organization and expose.
45. thermal heads as claimed in claim 43, is characterized in that:
Described sealing resin is formed in the mode making the local of described controlling organization and expose.
46. thermal heads as claimed in claim 36, is characterized in that:
This thermal head possesses the sealing resin be clipped on the thickness direction of described substrate at least partially between described substrate and described controlling organization,
A part for described sealing resin is infiltrated between the described second layer of described connecting portion and described liner further.
47. thermal heads as claimed in claim 37, is characterized in that:
This thermal head possesses the sealing resin be clipped on the thickness direction of described substrate at least partially between described substrate and described controlling organization,
A part for described sealing resin is infiltrated between the described second layer of described connecting portion and described liner further.
48. thermal heads as claimed in claim 46, is characterized in that:
Described controlling organization has the side that the thickness direction along described substrate erects,
Described sealing resin covers the described substrate-side part of described side, and in described side, makes to expose with described substrate opposition side part.
49. thermal heads as claimed in claim 47, is characterized in that:
Described controlling organization has the side that the thickness direction along described substrate erects,
Described sealing resin covers the described substrate-side part of described side, and in described side, makes to expose with described substrate opposition side part.
50. thermal heads as claimed in claim 1, is characterized in that:
Described controlling organization has the multiple drive IC mutually left.
51. thermal heads as claimed in claim 3, is characterized in that:
Described controlling organization has the multiple drive IC mutually left.
The manufacture method of 52. 1 kinds of thermal heads, is characterized in that, comprising:
The operation of heating resistor is formed in the side of the thickness direction of substrate;
The operation with the electrode layer of described heating resistor conducting is formed in the side of the thickness direction of described substrate; With
The operation of controlling organization is fixed in the side of the thickness direction of described substrate, wherein,
Possess the operation connecting multiple conductive component at described controlling organization,
The operation of described formation electrode layer possesses: form public electrode distribution and leave and the operation of the multiple single electrode distributions mutually left from described public electrode distribution,
The operation of fixing described controlling organization possesses: make the first conductive component as any one in described multiple conductive component and the operation as the first single electrode wiring contacts of any one in described multiple single electrode distribution; With the operation that described first conductive component is engaged with described first single electrode distribution.
The manufacture method of 53. thermal heads as claimed in claim 52, is characterized in that:
Described controlling organization possesses multiple liner,
The mode comprising to cover described multiple liner in the operation be connected with described multiple conductive component by described controlling organization forms gold-plated operation.
The manufacture method of 54. thermal heads as claimed in claim 52, is characterized in that:
In the operation engaged with described first single electrode distribution by described first conductive component, ultrasonic wave vibration is applied to described controlling organization.
The manufacture method of 55. thermal heads as claimed in claim 54, is characterized in that:
Described substrate is elongated shape,
Described controlling organization is the length direction elongated shape consistent with the length direction of described substrate,
Described multiple single electrode distribution has the connecting portion engaged with multiple described conductive component,
The described connecting portion of described multiple single electrode distribution is arranged in row along the length direction of described substrate,
In the operation that described first conductive component is engaged with described first single electrode distribution, apply to vibrate with the ultrasonic wave that the length direction of described substrate is direction of vibration to described controlling organization.
The manufacture method of 56. thermal heads as claimed in claim 55, is characterized in that:
The size of described first conductive component of the length direction of described substrate is less than the size of the described connecting portion of the length direction of described substrate.
The manufacture method of 57. thermal heads as claimed in claim 55, is characterized in that:
Described connecting portion is by ground floor and be laminated in the opposite side of described substrate relative to this ground floor and the second layer with the surface more coarse than described ground floor is formed.
The manufacture method of 58. thermal heads as claimed in claim 57, is characterized in that:
The described second layer comprises gold and glass.
The manufacture method of 59. thermal heads as claimed in claim 58, is characterized in that:
Described ground floor comprises organic gold compound.
The manufacture method of 60. thermal heads as claimed in claim 59, is characterized in that:
The described second layer is than described first thickness.
The manufacture method of 61. thermal heads as claimed in claim 52, is characterised in that:
Also possesses the operation forming sealing resin between described substrate and described controlling organization.
The manufacture method of 62. thermal heads as claimed in claim 61, is characterized in that:
The operation forming described sealing resin comprises: on the direction that the described thickness direction with described controlling organization is orthogonal, arrange the operation of fluid resin material at the ora terminalis leaving described heating resistor.
CN201210107289.8A 2011-04-13 2012-04-12 Thermal head and manufacture method thereof CN102729642B (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2011-089205 2011-04-13
JP2011089205 2011-04-13
JP2011089206 2011-04-13
JP2011-089206 2011-04-13
JP2012-063193 2012-03-21
JP2012063193A JP2012228871A (en) 2011-04-13 2012-03-21 Thermal head and method for manufacturing the same

Publications (2)

Publication Number Publication Date
CN102729642A CN102729642A (en) 2012-10-17
CN102729642B true CN102729642B (en) 2014-12-31

Family

ID=46986242

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210107289.8A CN102729642B (en) 2011-04-13 2012-04-12 Thermal head and manufacture method thereof

Country Status (1)

Country Link
CN (1) CN102729642B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI703052B (en) 2019-08-05 2020-09-01 謙華科技股份有限公司 Thermal print head element, thermal print head element module and manufacturing method of the thermal print head element module

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10525730B2 (en) * 2015-12-25 2020-01-07 Kyocera Corporation Thermal head and thermal printer
CN107160862B (en) * 2017-06-20 2018-10-19 山东华菱电子股份有限公司 Thermal printing head heating base plate and its manufacturing method
US10632760B2 (en) * 2018-02-26 2020-04-28 Rohm Co., Ltd. Thermal printhead

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1781721A (en) * 2004-12-03 2006-06-07 阿尔卑斯电气株式会社 Thermal head and manufacturing method thereof
CN1946560A (en) * 2004-04-28 2007-04-11 罗姆股份有限公司 Thermal print head
CN1331681C (en) * 2004-01-26 2007-08-15 阿尔卑斯电气株式会社 Thermal head
CN100500442C (en) * 2003-09-16 2009-06-17 罗姆股份有限公司 Thermal printhead and method for manufacturing same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001010101A (en) * 1999-06-29 2001-01-16 Kyocera Corp Thermal head
JP5031701B2 (en) * 2008-09-09 2012-09-26 京セラ株式会社 Recording head and recording device having the same
JP2010194856A (en) * 2009-02-25 2010-09-09 Kyocera Corp Recording head and recording apparatus equipped with the same
JP5363898B2 (en) * 2009-07-29 2013-12-11 京セラ株式会社 Recording head and recording apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100500442C (en) * 2003-09-16 2009-06-17 罗姆股份有限公司 Thermal printhead and method for manufacturing same
CN1331681C (en) * 2004-01-26 2007-08-15 阿尔卑斯电气株式会社 Thermal head
CN1946560A (en) * 2004-04-28 2007-04-11 罗姆股份有限公司 Thermal print head
CN1781721A (en) * 2004-12-03 2006-06-07 阿尔卑斯电气株式会社 Thermal head and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI703052B (en) 2019-08-05 2020-09-01 謙華科技股份有限公司 Thermal print head element, thermal print head element module and manufacturing method of the thermal print head element module

Also Published As

Publication number Publication date
CN102729642A (en) 2012-10-17

Similar Documents

Publication Publication Date Title
KR100194130B1 (en) Semiconductor package
KR100459971B1 (en) Semiconductor device, method and device for producing the same, circuit board, and electronic equipment
CN102693967B (en) Semiconductor memory card
JP5639052B2 (en) Edge stacking at wafer level
TW512498B (en) Semiconductor device, method of manufacture thereof, circuit board, and electronic device
US8076785B2 (en) Semiconductor device
CN100364090C (en) Light-thin laminated packaged semiconductor device and manufacturing process thereof
CN102098876B (en) Manufacturing process for circuit substrate
US8404516B2 (en) Method for producing a MEMS package
TW473982B (en) Stacked semiconductor device
CN100524739C (en) Semiconductor device and fabrication method thereof
CN100359682C (en) Thin electronic label and method for making same
CN107535081A (en) High-frequency model
CN102956353B (en) Chip-component structure and manufacture method thereof
KR100711675B1 (en) Semiconductor device and manufacturing method thereof
CN103681365B (en) Package-on-package structure and preparation method thereof
CN100536128C (en) Semiconductor module and method of manufacturing the same
US20040227256A1 (en) Semiconductor device and production method therefor
TW317026B (en)
KR20080003827A (en) Electronic component mounting board and electronic device using same
JP4938779B2 (en) Micro-electromechanical mechanism device and manufacturing method thereof
KR100356770B1 (en) Semiconductor device
JP2003179099A (en) Semiconductor device and method of manufacturing the same
KR20090092326A (en) Chip capacitor embedded pwb
JP4558539B2 (en) Electronic circuit board, electronic circuit, method for manufacturing electronic circuit board, and method for manufacturing electronic circuit

Legal Events

Date Code Title Description
PB01 Publication
C06 Publication
SE01 Entry into force of request for substantive examination
C10 Entry into substantive examination
GR01 Patent grant
C14 Grant of patent or utility model