CN102713651B - 半导体检测装置 - Google Patents
半导体检测装置 Download PDFInfo
- Publication number
- CN102713651B CN102713651B CN201080003499.1A CN201080003499A CN102713651B CN 102713651 B CN102713651 B CN 102713651B CN 201080003499 A CN201080003499 A CN 201080003499A CN 102713651 B CN102713651 B CN 102713651B
- Authority
- CN
- China
- Prior art keywords
- supporting platform
- mentioned
- wafer
- detector
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 85
- 238000007689 inspection Methods 0.000 title abstract 4
- 239000000463 material Substances 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 abstract description 31
- 230000001070 adhesive effect Effects 0.000 abstract description 31
- 239000000523 sample Substances 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2632—Circuits therefor for testing diodes
- G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
- G01R31/2887—Features relating to contacting the IC under test, e.g. probe heads; chucks involving moving the probe head or the IC under test; docking stations
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Tests Of Electronic Circuits (AREA)
Abstract
Description
Claims (3)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2010/071936 WO2012077190A1 (ja) | 2010-12-07 | 2010-12-07 | 半導体検査装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102713651A CN102713651A (zh) | 2012-10-03 |
CN102713651B true CN102713651B (zh) | 2015-05-20 |
Family
ID=44693628
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080003499.1A Expired - Fee Related CN102713651B (zh) | 2010-12-07 | 2010-12-07 | 半导体检测装置 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP4771346B1 (zh) |
CN (1) | CN102713651B (zh) |
WO (1) | WO2012077190A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013140556A1 (ja) * | 2012-03-21 | 2013-09-26 | パイオニア株式会社 | 半導体発光素子用の発光量推定装置及び発光量推定方法 |
DE102014219604A1 (de) * | 2014-09-26 | 2016-03-31 | Siemens Aktiengesellschaft | Hubsystem, Verfahren zur elektrischen Prüfung, Schwingungsdämpfer und Maschinenaggregat |
EP3036827B1 (de) | 2013-09-27 | 2021-05-26 | Siemens Aktiengesellschaft | Hubsystem, verfahren zur elektrischen prüfung, schwingungsdämpfer und maschinenaggregat |
GB2521176A (en) | 2013-12-11 | 2015-06-17 | Infiniled Ltd | Apparatus and method for profiling a beam of a light emitting semiconductor device |
CN105092898B (zh) * | 2014-05-04 | 2018-03-09 | 中芯国际集成电路制造(北京)有限公司 | 半导体检测结构及形成方法、检测方法 |
CN105182217B (zh) * | 2015-08-25 | 2017-11-07 | 东莞中之光电股份有限公司 | 一种测试编带机的芯片探测装置 |
KR101838805B1 (ko) * | 2016-07-29 | 2018-03-14 | 세메스 주식회사 | 반도체 소자 테스트 장치 및 방법 |
JP6726295B2 (ja) * | 2016-10-27 | 2020-07-22 | 三井化学東セロ株式会社 | 電子装置の製造方法、電子装置製造用粘着性フィルムおよび電子部品試験装置 |
CN111366811B (zh) * | 2020-03-19 | 2022-06-21 | 北京广利核系统工程有限公司 | 一种电子元器件的集成式自动检验装置及方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101398458A (zh) * | 2007-09-27 | 2009-04-01 | 力晶半导体股份有限公司 | 针测系统 |
CN101464474A (zh) * | 2007-12-20 | 2009-06-24 | 和舰科技(苏州)有限公司 | 一种可旋转探针卡的半导体测量探针台 |
CN102077103A (zh) * | 2009-04-14 | 2011-05-25 | 日本先锋公司 | 半导体测定装置以及方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3267938B2 (ja) * | 1998-09-07 | 2002-03-25 | 株式会社東京精密 | プローバ |
JP4254036B2 (ja) * | 2000-09-22 | 2009-04-15 | 横河電機株式会社 | ステージの昇降装置 |
JP2006329816A (ja) * | 2005-05-26 | 2006-12-07 | Sanyo Electric Co Ltd | プローブ検査装置 |
JP2007019237A (ja) * | 2005-07-07 | 2007-01-25 | Tokyo Seimitsu Co Ltd | 両面発光素子用プロービング装置 |
JP2008070308A (ja) * | 2006-09-15 | 2008-03-27 | Tokyo Seimitsu Co Ltd | マルチチッププローバ |
-
2010
- 2010-12-07 WO PCT/JP2010/071936 patent/WO2012077190A1/ja active Application Filing
- 2010-12-07 JP JP2011516912A patent/JP4771346B1/ja not_active Expired - Fee Related
- 2010-12-07 CN CN201080003499.1A patent/CN102713651B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101398458A (zh) * | 2007-09-27 | 2009-04-01 | 力晶半导体股份有限公司 | 针测系统 |
CN101464474A (zh) * | 2007-12-20 | 2009-06-24 | 和舰科技(苏州)有限公司 | 一种可旋转探针卡的半导体测量探针台 |
CN102077103A (zh) * | 2009-04-14 | 2011-05-25 | 日本先锋公司 | 半导体测定装置以及方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4771346B1 (ja) | 2011-09-14 |
CN102713651A (zh) | 2012-10-03 |
WO2012077190A1 (ja) | 2012-06-14 |
JPWO2012077190A1 (ja) | 2014-05-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan Co-patentee after: Pioneer Fa Corp. Patentee after: PIONEER Corp. Address before: Kanagawa Co-patentee before: Pioneer Fa Corp. Patentee before: PIONEER Corp. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Co-patentee after: PFA Co. Patentee after: PIONEER Corp. Address before: Tokyo, Japan Co-patentee before: Pioneer Fa Corp. Patentee before: PIONEER Corp. |
|
CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180828 Address after: Tokyo, Japan Co-patentee after: PFA Co. Patentee after: SHINKAWA Ltd. Address before: Tokyo, Japan Co-patentee before: PFA Co. Patentee before: PIONEER Corp. |
|
TR01 | Transfer of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150520 Termination date: 20201207 |
|
CF01 | Termination of patent right due to non-payment of annual fee |