CN102696118A - 对碲化镉光伏器件进行退火的方法 - Google Patents
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Abstract
一种制造光伏器件的方法可以包括：在基底上形成硫化锌镉层；在硫化锌镉层上沉积碲化镉层；使氯化镉与碲化镉层接触；对一层或多层进行退火，其中，所述一层或多层至少包括碲化镉层。
Description
本申请要求按照35U.S.C.§119(e)于2009年10月13日提交的序号为61/251,108的美国临时专利申请的优先权，该申请通过引用被包含于此。
技术领域
本发明涉及光伏器件和生产方法。
背景技术
光伏器件可以包括沉积在基底上方的半导体材料，例如，第一层作为窗口层，第二层作为吸收层。半导体窗口层可以允许太阳辐射穿透至诸如碲化镉层的吸收层，吸收层将太阳能转换为电。光伏器件也可以包含一个或多个透明导电氧化物层，所述一个或多个透明导电氧化物层也通常为电荷的导体。
附图说明
图1是具有多层的光伏器件的示意图。
图2是具有多层的光伏器件的示意图。
具体实施方式
一种制造光伏器件的方法可以包括：在基底上形成硫化锌镉层；在硫化锌镉层上沉积碲化镉层；使氯化镉与碲化镉层接触；对一层或多层进行退火，其中，所述一层或多层至少包括碲化镉层。
所述方法可以具有各种可选特征。例如，所述退火可以包括在高于大约380℃加热至少碲化镉层。所述退火可以包括在大约400℃至大约600℃的范围内加热至少碲化镉层。所述退火可以包括在大约410℃至大约500℃的范围内加热至少碲化镉层。所述退火可以包括在高于大约400℃加热至少碲化镉层。所述退火可以包括在低于大约600℃加热至少碲化镉层。所述退火可以包括加热至少碲化镉层大约5分钟至大约60分钟。所述退火可以包括加热至少碲化镉层大约10分钟至大约50分钟。所述退火可以包括加热至少碲化镉层大约20分钟至大约30分钟。所述基底可以包括位于钠钙玻璃上的透明导电氧化物堆叠件，所述透明导电氧化物堆叠件包括一个或多个阻挡层、位于所述一个或多个阻挡层上的透明导电氧化物层以及位于透明导电氧化物层上的缓冲层。所述接触可以包括物理气相沉积。所述接触可以在真空下进行。
一种光伏器件可以包括位于硫化锌镉层上的碲化镉层，其中，所述碲化镉层与氯化镉至少部分接触。硫化锌镉层可以具有大约20％至大约40％的锌。所述光伏器件可以包括位于硫化锌镉层和碲化镉层之间的碲化锌镉层。所述碲化锌镉层可以具有大约2％至大约10％的锌含量。所述碲化锌镉层可以具有大约4％至大约8％的锌含量。所述碲化锌镉层可以具有大约5％至大约6％的范围内的锌含量。所述光伏器件可以包括位于基底上的透明导电氧化物堆叠件，所述透明导电氧化物堆叠件包括一个或多个阻挡层、位于所述一个或多个阻挡层上的透明导电氧化物层以及位于透明导电氧化物层上的缓冲层，其中，所述硫化锌镉层位于所述透明导电氧化物堆叠件上。
光伏器件可以包括与基底相邻的透明导电氧化物层以及半导体材料的多层。所述半导体材料的多层可以包括双层，所述双层可以包括n型半导体窗口层和p型半导体吸收层。n型窗口层和p型吸收层可以设置为彼此接触，以产生电场。当光子与n型窗口层接触时，光子可以释放电子-空穴对，将电子发送到n侧并且将空穴发送到p侧。电子可以经由外部电流通路流回p侧。得到的电子流提供电流，该电流与电场产生的电压结合，从而产生功率。结果是将光子能转换为电能。为了保持并提高器件性能，除了半导体窗口层和吸收层之外，可以在基底上方设置多个层。
光伏器件可以形成在光学透明的基底(例如，玻璃)上。因为玻璃不导电，所以可以在基底和半导体双层之间沉积透明导电氧化物(TCO)层。缓冲层可以沉积在TCO层和半导体窗口层之间。另外，在基底和TCO层之间可以包括阻挡层，以减少钠或其它污染物从基底到半导体层的扩散，这种扩散会导致劣化和分层。
可以将硫化锌镉沉积在TCO堆叠件上，以作为窗口层。已经证明的是，由于在吸收层的氯化镉退火过程中硫化锌镉能够耐受高的退火温度，所以硫化锌镉比硫化镉更耐用，这样可以改善碲化镉中的结晶质量和传输性质。过高的温度会导致传统的硫化镉/碲化镉结构中的相互扩散，从而干扰硫化镉层的一致性。可以采用任何合适的技术沉积硫化锌镉，所述任何合适的技术包括于2009年7月13日提交的序列号为61/225,013的临时美国专利申请中描述的任何技术，该申请的全部内容通过引用被包含于此。
参照图1，碲化镉层130可以沉积在硫化锌镉层120上。可以使用包括气相传输沉积的任何合适的方式沉积碲化镉层130。硫化锌镉层120可以沉积在透明导电氧化物堆叠件110上。可以利用任何合适的工艺沉积或形成硫化锌镉层120。透明导电氧化物堆叠件110可以沉积在基底100上，基底100可以包括例如钠钙玻璃之类的玻璃的任何合适的材料。
在沉积之后，器件层可以经历氯化镉处理，从而增大晶粒尺寸并且提高器件效率。参照图2，通过示例的方式，氯化镉200可以接触碲化镉层130。可以使用包括例如物理气相沉积的任何合适的方式来接触氯化镉200。可以在例如任何合适的压力下(例如，在减压下或真空下)的任何合适的条件下来接触氯化镉200。氯化镉200可以为气体。可以在退火步骤之后进行氯化镉处理，或者可以在沉积一个或多个器件层之后立刻进行氯化镉处理，可以在高温下或者不在高温下进行氯化镉处理。在沉积氯化镉200之后，可以在比通常用于不包括硫化锌镉的器件的温度高的温度下对器件层进行退火(第一次时间或第二时间)。例如，在高于大约380℃的温度下加热碲化镉层130和硫化锌镉层120，例如，在大约400℃至大约800℃、大约500℃至大约700℃、大约550℃至大约650℃的范围、高于大约400℃或低于大约600℃加热碲化镉层130和硫化锌镉层120。利用这里公开的方法制造的光伏器件在暴露于太阳时可以比传统器件产生更高的效率(大约10％至大约15％，例如大约12％至大约14％)。
在沉积和退火之后，可以将背接触金属沉积在碲化镉层上。可以将背支撑件沉积到背接触金属上。背支撑件可以包括任何合适的材料，所述任何合适的材料包括例如钠钙玻璃之类的玻璃。
利用这里公开的方法制造的光伏器件/模块可以包含在一个或多个光伏阵列中。所述阵列可以被包含到用于产生电的各种系统中。例如，可以用一束光照射光伏模块，以产生光电流。可以收集光电流并且将直流电(DC)转换为交流电(AC)，并且将收集的光电流分配到电网。可以将任何合适波长的光指引至模块，以产生光电流，所述任何合适波长的光包括例如大于400nm或小于700nm(例如，紫外光)。一个光伏模块产生的光电流可以与其它光伏模块产生的光电流组合。例如，光伏模块可以为光伏阵列的一部分，来自光伏阵列的总电流可以被利用(harnessed)和被分配。
通过示出和示例的方式提供上述实施例。应该理解，上面提供的示例可以在特定方面进行改变，并且仍保留在权利要求的范围内。应该理解，尽管已经参照上面的优选实施例描述了本发明，但是其它实施例也在权利要求的范围内。
Claims (19)
1.一种制造光伏器件的方法，所述方法包括：
在基底上形成硫化锌镉层；
在硫化锌镉层上沉积碲化镉层；
使氯化镉与碲化镉层接触；
对一层或多层进行退火，所述一层或多层至少包括碲化镉层。
2.根据权利要求1所述的方法，其中，所述退火包括在高于大约380℃加热至少碲化镉层。
3.根据权利要求2所述的方法，其中，所述退火包括在大约400℃至大约600℃的范围内加热至少碲化镉层。
4.根据权利要求3所述的方法，其中，所述退火包括在大约410℃至大约500℃的范围内加热至少碲化镉层。
5.根据权利要求1所述的方法，其中，所述退火包括在高于大约400℃加热至少碲化镉层。
6.根据权利要求1所述的方法，其中，所述退火包括在低于大约600℃加热至少碲化镉层。
7.根据权利要求1所述的方法，其中，所述退火包括加热至少碲化镉层大约5分钟至大约60分钟。
8.根据权利要求7所述的方法，其中，所述退火包括加热至少碲化镉层大约10分钟至大约50分钟。
9.根据权利要求8所述的方法，其中，所述退火包括加热至少碲化镉层大约20分钟至大约30分钟。
10.根据权利要求1所述的方法，其中，所述基底包括位于钠钙玻璃上的透明导电氧化物堆叠件，所述透明导电氧化物堆叠件包括一个或多个阻挡层、位于所述一个或多个阻挡层上的透明导电氧化物层以及位于透明导电氧化物层上的缓冲层。
11.根据权利要求1所述的方法，其中，所述接触包括物理气相沉积。
12.根据权利要求11所述的方法，其中，所述接触在真空下进行。
13.一种光伏器件，所述光伏器件包括位于硫化锌镉层上的碲化镉层，其中，所述碲化镉层与氯化镉至少部分接触。
14.根据权利要求13所述的光伏器件，其中，硫化锌镉层具有大约20％至大约40％的锌。
15.根据权利要求13所述的光伏器件，所述光伏器件还包括位于硫化锌镉层和碲化镉层之间的碲化锌镉层。
16.根据权利要求15所述的光伏器件，其中，所述碲化锌镉层具有大约2％至大约10％的锌含量。
17.根据权利要求16所述的光伏器件，其中，所述碲化锌镉层具有大约4％至大约8％的锌含量。
18.根据权利要求17所述的光伏器件，其中，所述碲化锌镉层具有大约5％至大约6％范围内的锌含量。
19.根据权利要求13所述的光伏器件，所述光伏器件还包括基底上的透明导电物堆叠件，所述透明导电氧化物堆叠件包括一个或多个阻挡层、位于所述一个或多个阻挡层上的透明导电氧化物层以及位于透明导电氧化物层上的缓冲层，其中，所述硫化锌镉层位于所述透明导电氧化物堆叠件上。
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| US25110809P | 2009-10-13 | 2009-10-13 | |
| US61/251,108 | 2009-10-13 | ||
| PCT/US2010/052318 WO2011046930A1 (en) | 2009-10-13 | 2010-10-12 | Method of annealing cadmium telluride photovoltaic device |
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| CN112837997A (zh) * | 2021-01-06 | 2021-05-25 | 河南大学 | 一种ZnCdS薄膜的制备方法及铜锌锡硫硒太阳电池的制备方法 |
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| CN104025252B (zh) | 2011-11-18 | 2018-04-06 | 第一太阳能有限公司 | 提供用于光伏模块的单步骤氯化镉蒸气处理的方法和设备 |
| US9437760B2 (en) | 2013-03-15 | 2016-09-06 | First Solar, Inc. | Method of reducing semiconductor window layer loss during thin film photovoltaic device fabrication, and resulting device structure |
| WO2014151594A1 (en) | 2013-03-15 | 2014-09-25 | First Solar, Inc. | High efficiency photovoltaic device employing cadmium sulfide telluride and method of manufacture |
| TWI550717B (zh) | 2014-08-25 | 2016-09-21 | 新能光電科技股份有限公司 | 熱處理方法及其所製得之產物 |
| US10453988B2 (en) | 2016-06-03 | 2019-10-22 | University Of Utah Research Foundation | Methods for creating cadmium telluride (CdTe) and related alloy film |
| EP3857611B1 (en) * | 2018-10-24 | 2023-07-05 | First Solar, Inc. | Buffer layers for photovoltaic devices with group v doping |
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| WO2011046930A1 (en) | 2011-04-21 |
| IN2012DN02992A (zh) | 2015-07-31 |
| US20110088768A1 (en) | 2011-04-21 |
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