CN102691101B - 硅锭及其制造装置和方法、硅晶圆、太阳能电池和硅零件 - Google Patents

硅锭及其制造装置和方法、硅晶圆、太阳能电池和硅零件 Download PDF

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Publication number
CN102691101B
CN102691101B CN201210074025.7A CN201210074025A CN102691101B CN 102691101 B CN102691101 B CN 102691101B CN 201210074025 A CN201210074025 A CN 201210074025A CN 102691101 B CN102691101 B CN 102691101B
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crucible
silicon
silicon ingot
sidewall
manufacture
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Chinese (zh)
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CN102691101A (zh
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二田伸康
中田嘉信
池田洋
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Mitsubishi Materials Corp
Mitsubishi Materials Electronic Chemicals Co Ltd
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Mitsubishi Materials Corp
Mitsubishi Materials Electronic Chemicals Co Ltd
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
CN201210074025.7A 2011-03-25 2012-03-20 硅锭及其制造装置和方法、硅晶圆、太阳能电池和硅零件 Active CN102691101B (zh)

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JP2011-068191 2011-03-25
JP2011068191A JP5606976B2 (ja) 2011-03-25 2011-03-25 シリコンインゴット製造装置、シリコンインゴットの製造方法

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CN102691101A CN102691101A (zh) 2012-09-26
CN102691101B true CN102691101B (zh) 2016-08-24

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CN (1) CN102691101B (ja)
TW (1) TWI527940B (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007020006A1 (de) * 2007-04-27 2008-10-30 Freiberger Compound Materials Gmbh Vorrichtung und Verfahren zur Herstellung von poly- oder multikristallinem Silizium, dadurch hergestellter Masseblock (Ingot) sowie Wafer aus poly- oder multikristallinem Silizium, und Verwendung zur Herstellung von Solarzellen
US9472380B2 (en) * 2012-12-27 2016-10-18 Mitsubishi Materials Corporation Silicon part for plasma etching apparatus and method of producing the same
JP2015006990A (ja) * 2014-08-27 2015-01-15 三菱マテリアル株式会社 シリコンインゴット、シリコンウェハ、太陽電池及びシリコンパーツ
CN105568363B (zh) * 2016-03-10 2018-07-31 中国电子科技集团公司第十三研究所 一种化合物原位合成连续晶体生长的vgf高压炉

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004058075A (ja) * 2002-07-25 2004-02-26 Mitsubishi Materials Corp 鋳造装置及び鋳造方法
CN101024895A (zh) * 2006-01-12 2007-08-29 硅电子股份公司 外延晶片以及制造外延晶片的方法
CN101370969A (zh) * 2006-01-20 2009-02-18 Bp北美公司 制造几何多晶铸硅的方法和装置及用于光电池的几何多晶铸硅实体

Family Cites Families (3)

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Publication number Priority date Publication date Assignee Title
JP4099884B2 (ja) * 1998-11-27 2008-06-11 三菱マテリアル株式会社 鋳造装置
JP3885452B2 (ja) * 1999-04-30 2007-02-21 三菱マテリアル株式会社 結晶シリコンの製造方法
JP2005088056A (ja) * 2003-09-18 2005-04-07 Mitsubishi Materials Corp 鋳造装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004058075A (ja) * 2002-07-25 2004-02-26 Mitsubishi Materials Corp 鋳造装置及び鋳造方法
CN101024895A (zh) * 2006-01-12 2007-08-29 硅电子股份公司 外延晶片以及制造外延晶片的方法
CN101370969A (zh) * 2006-01-20 2009-02-18 Bp北美公司 制造几何多晶铸硅的方法和装置及用于光电池的几何多晶铸硅实体

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JP5606976B2 (ja) 2014-10-15
CN102691101A (zh) 2012-09-26
TW201250070A (en) 2012-12-16
JP2012201557A (ja) 2012-10-22
TWI527940B (zh) 2016-04-01

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