CN102664171B - Three-dimensional grid-type chip heat conduction model based on carbon nano tube - Google Patents
Three-dimensional grid-type chip heat conduction model based on carbon nano tube Download PDFInfo
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- CN102664171B CN102664171B CN201210138728.1A CN201210138728A CN102664171B CN 102664171 B CN102664171 B CN 102664171B CN 201210138728 A CN201210138728 A CN 201210138728A CN 102664171 B CN102664171 B CN 102664171B
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Abstract
The invention relates to a three-dimensional grid-type chip heat conduction model based on a carbon nano tube. The three-dimensional grid-type chip heat conduction model forms a heat interface material layer between a chip layer and a heat conduction device layer, wherein the heat interface material layer is based on the carbon nano tube and is composed of a heat through hole based on the carbon nano tube and a grid layer based on the carbon nano tube; the heat through hole based on the carbon nano tube forms a rapid heat transmission channel from the chip layer to the grid layer based on the carbon nano tube, thus heat on the chip layer is rapidly transferred to the grid layer based on the carbon nano tube by virtue of the heat through hole based on the carbon nano tube; and then the heat is transmitted to the whole chip layer by virtue of horizontally transverse and longitudinal carbon nano tubes arranged in the grid layer based on the carbon nano tube, so as to realize uniform distribution of the heat. By adopting the model disclosed by the invention, diffusion of the heat of the chip can be effectively realized, thus the chip can obtain uniform heat distribution.
Description
Technical field
The present invention relates to a kind of three-dimensional grid-type chip heat conduction model based on carbon nano-tube.Carbon nano-tube, because of the pyroconductivity of its superelevation, can be used as a kind of promising thermal interfacial material, therefore proposes the new structure of the chip cooling based on carbon nano-tube herein.In this structure, by improving the heat diffusion between chip layer and heat conductor based on the heat through-hole of carbon nano-tube, balanced the heat on monoblock chip simultaneously by horizontal cross and longitudinal carbon nano-tube clathrum, reduce the peak temperature of chip.This structure not only can improve the reliability of chip, but also can extend the life-span of chip.
Background technology
Along with device feature size enters nanoscale, the integrated level of device constantly increases, thus causes high power consumption and the high-temperature problem of chip.High power consumption and high-temperature drastically influence circuit performance, reliability and chip package.Therefore heat radiation becomes the maximum stumbling-block that can the performance of chip excellent.And in whole heat dissipation problem, the thermal contact resistance from chip layer to thermal diffuser and between radiator layer remains a very formidable problem.
For overcoming the problems referred to above, existing scholar proposes novel chip model, namely between chip layer and heat conductor layer, adds one deck thermal interface material layer.Novel hot boundary material and chip structure can fill up the blank between delivered heat face, not only improve heat performance, but also enhance circuit reliability, therefore also need to continue to explore good thermal interfacial material and chip heat conduction model.Traditional thermal interfacial material is mainly made up of copper, has very high pyroconductivity compared to air, and therefore its thermal contact resistance is little comparatively speaking, so just the temperature of heat intersection can be reduced.
Because carbon nano-tube has special construction, the character such as electricity and calorifics, compared to copper, has higher pyroconductivity and less thermal contact resistance, and therefore carbon nano-tube is more suitable for doing the composition material of thermal interfacial material and is added between chip and heat conductor.Namely we propose the thermal interfacial material based on carbon nano-tube model and heat through-hole by problem too high for more effective solution chip temperature.
Summary of the invention
The present invention proposes a kind of three dimensional network form chip heat conducting structure based on carbon nano-tube, strengthens the heat dispersion of chip as chip internal thermal interface material layer, thus improves the reliability of chip.
Design of the present invention is as follows:
The present invention, by improving the heat diffusion between chip layer and heat conductor layer based on the heat through-hole of carbon nano-tube, is balanced the heat on monoblock chip simultaneously, reduces peak temperature by horizontal cross and longitudinal carbon nano-tube clathrum.Thus effectively raise the heat dispersion of chip.
Conceive according to foregoing invention, the present invention adopts following technical proposals: a kind of three dimensional network form chip heat conducting structure based on carbon nano-tube, form the thermal interface material layer between chip layer and heat conductor layer, it is characterized in that: described thermal interface material layer is the thermal interface material layer based on carbon nano-tube, be made up of the heat through-hole based on carbon nano-tube and the clathrum based on carbon nano-tube, heat through-hole based on carbon nano-tube forms chip layer to the flash heat transfer passage based on the clathrum of carbon nano-tube, thus, heat in chip layer is quickly transferred on the clathrum based on carbon nano-tube by the heat through-hole based on carbon nano-tube, then, heat is through being transferred to whole chip layer to realize being uniformly distributed of heat based on the horizontal cross in the clathrum of carbon nano-tube and longitudinal carbon nano-tube.The carbon nano-tube bundle that the heat through-hole of described carbon nano-tube is made up of 5*5 array carbon nano tube.Describedly to be made up of the longitudinal carbon nano-tube lamination of horizontal cross carbon nano-tube lamination and level based on carbon nano-tube clathrum; The carbon nano-tube lamination of horizontal cross is superposed by two-layer carbon nano-tube and forms, and every one deck carbon nanotube layer is made up of some equally distributed carbon nano-tube, posts on the insulating barrier be connected with chip layer; The longitudinal carbon nano-tube lamination of level is superposed by two-layer carbon nano-tube and forms, every one deck carbon nanotube layer is made up of some equally distributed carbon nano-tube, be positioned on horizontal cross carbon nano-tube lamination, on chip layer, form the clathrum based on carbon nano-tube, in this clathrum based on carbon nano-tube, vertical direction inserts the heat through-hole based on carbon nano-tube.
the present invention compared with prior art, has following apparent outstanding essential characteristics and marked improvement:
1. fill heat through-hole based on carbon nano-tube bundle
By carbon nano-tube bundle through hole by the delivered heat on silicon substrate to based on carbon nano-tube clathrum, thus realize better heat transfer.
2. realize chip Homogeneouslly-radiating based on carbon nano-tube clathrum
By the carbon nano-tube bundle on horizontal and vertical direction by the transfer of heat in thermal source district to cooled region, thus balance the heat of whole chip, improve chip cooling efficiency.
3. Design and manufacture is easy
The present invention is by the carbon nano-tube hole generating level, and vertical carbon nano-tube hole and the pith such as horizontal cross and longitudinal carbon nano-tube bundle node realize, it can thus be appreciated that the present invention designs easily, manufacturing process is simple.
Accompanying drawing explanation
Fig. 1 is the three-dimensional grid-type chip heat conduction model figure based on carbon nano-tube.
Fig. 2 is at Grown carbon nano-tube bundle.
Fig. 3 is carbon nano-tube on hole down below.
Fig. 4 is the multi-form of carbon nano-tube node.
Fig. 5 is the heat distribution of Alpha 21364 processor chips based on the generation of carbon nano-tube thermal management structure.
Fig. 6 is the heat distribution of the OpenSparc T1 processor chips based on the generation of carbon nano-tube thermal management structure.
Embodiment
Details are as follows by reference to the accompanying drawings for the preferred embodiments of the present invention:
Embodiment one:
See Fig. 1, this is based on the three dimensional network form chip heat conducting structure of carbon nano-tube, form the thermal interface material layer (2) between chip layer (3) and heat conductor layer (1), it is characterized in that: described thermal interface material layer (2) is the thermal interface material layer based on carbon nano-tube, be made up of the heat through-hole (5) based on carbon nano-tube and the clathrum (4) based on carbon nano-tube, heat through-hole (5) based on carbon nano-tube forms chip layer (3) to the flash heat transfer passage based on the clathrum (4) of carbon nano-tube, thus, heat in chip layer (3) is quickly transferred on the clathrum (4) based on carbon nano-tube based on the heat through-hole (5) of carbon nano-tube, then, heat is through the carbon nano-tube (6 based on the horizontal cross in the clathrum (4) of carbon nano-tube and longitudinal direction, 7) whole chip layer (1) is transferred to realize being uniformly distributed of heat.
Embodiment two:
The present embodiment is substantially identical with embodiment one, and special feature is as follows:
The carbon nano-tube bundle that the heat through-hole (5) of described carbon nano-tube is made up of 5*5 array carbon nano tube.Describedly to be made up of longitudinal carbon nano-tube (7) lamination of horizontal cross carbon nano-tube (6) lamination and level based on carbon nano-tube clathrum (4); Carbon nano-tube (6) lamination of horizontal cross is superposed by two-layer carbon nano-tube and forms, and every one deck carbon nanotube layer is made up of some equally distributed carbon nano-tube, posts on the insulating barrier be connected with chip layer; Longitudinal carbon nano-tube (7) lamination of level is superposed by two-layer carbon nano-tube and forms, and every one deck carbon nanotube layer is made up of some equally distributed carbon nano-tube, is positioned on horizontal cross carbon nano-tube (6) lamination.On chip layer (3), form the clathrum (4) based on carbon nano-tube, in this clathrum based on carbon nano-tube, vertical direction inserts the heat through-hole (5) based on carbon nano-tube.
Embodiment three:
See Fig. 1, this is as follows based on the structure of the three dimensional network form chip heat conducting structure of carbon nano-tube:
1. fill heat through-hole with carbon nano-tube bundle: the carbon nano-tube bundle that the heat through-hole (5) based on carbon nano-tube is made up of 5*5 array carbon nano tube, the heat through-hole (5) based on carbon nano-tube is inserted between device layer (5) and fin (1) and is used to the delivered heat on silicon substrate to the clathrum (4) based on carbon nano-tube.Heat through-hole (5) need be uniformly distributed on a silicon substrate simultaneously, if words pockety, will affect its radiating efficiency.
2. carbon nano-tube clathrum.Clathrum (4) based on carbon nano-tube comprises cancellated carbon nano-tube bundle (horizontal cross and longitudinally discharge).Clathrum (4) based on carbon nano-tube forms primarily of horizontal cross carbon nano-tube (6) lamination and longitudinal carbon nano-tube (7) lamination of level.Carbon nano-tube (6) the lamination structure of horizontal cross is superposed by two-layer carbon nano-tube and forms, and single-layer carbon nano-tube is made up of some equally distributed carbon nano-tube, is placed on the insulating barrier that is connected with chip layer (3).Carbon nano-tube (7) lamination of level longitudinal direction is superposed by two-layer carbon nano-tube and forms, single-layer carbon nano-tube is made up of some equally distributed carbon nano-tube, be placed on horizontal cross carbon nano-tube (6) lamination, thus form the clathrum (4) of whole carbon nano-tube.Fig. 1 describes carbon nano-tube clathrum in detail.Heat can be transferred to heat conductor (1) by the carbon nano-tube bundle of vertical direction by this carbon nano-tube clathrum structure, by the carbon nano-tube bundle of level, the hot-fluid in thermal source district is transferred to cooled region simultaneously, such temperature just can be sent to monoblock chip, thus reduces the peak temperature of chip.Because temperature was diffused on monoblock chip (3) by heat before being transferred on heat conductor (1), so just can improve heat diffusion area, thus improve diffuser efficiency.
3. after generating the clathrum (4) based on carbon nano-tube, insert the heat through-hole (5) of vertical direction again, thus the grid type chip heat conducting structure formed based on carbon nano-tube three-dimensional, this structure needs three critical elements: (a) carbon nano-tube bundle vertically and in horizontal direction, as Fig. 2, b heat through-hole that () is filled with carbon nano-tube bundle, as Fig. 3, (c) carbon nano-tube bundle that is vertical and level is connected to form grid.Heat through-hole (5) is filled by carbon nano-tube bundle, by deep reactive ion etch technique etching vias on a silicon substrate.Carbon nano-tube is extended on hole on catalyst layer by thermal chemical vapor precipitate grows.Therefore, the carbon nano-tube bundle in vertical direction can be formed on hole, and growth on a silicon substrate.Carbon nano-tube bundle in horizontal direction but can not directly comprehensively obtain, the method of first carbon nano-tube bundle is utilized at this, carbon nano-tube is connected over their surface by control mode, because two connected carbon nano-tube can be formed by adding electron beam, this makes it possible to the molecular carbon nanotube node forming various ways, as shown in Figure 4.And be first by the carbon nano-tube hole of formation level in the present invention, secondly vertical carbon nano-tube hole is generated, the carbon nano-tube bundle of regeneration level, then carbon nano-tube bundle in the vertical and horizontal direction sets up node, finally just can form the thermal management structure of the present invention's proposition.
Fig. 5 is the heat distribution of Alpha 21364 processor chips produced based on the three-dimensional grid-type chip heat conduction model of carbon nano-tube.Fig. 6 is the heat distribution of the OpenSparc T1 processor chips produced based on the three-dimensional grid-type chip heat conduction model of carbon nano-tube.Their peak temperature is respectively 369K (96
oand 347K (73 C)
oc) Alpha 21364 processor chips and under baseline design (adding the situation of the thermal interfacial material of silicon between substrate and heat conductor) and the peak temperature of OpenSparc T1 processor chips are respectively 415K (142
oand 368K(95 C)
oc).Therefrom can find out the foundation of the three-dimensional grid-type chip heat conduction model based on carbon nano-tube, make the peak temperature of Alpha 21364 processor chips and OpenSparc T1 processor chips reduce 32% and 23% respectively.Illustrate that the present invention can effectively reduce the peak temperature of chip.
Claims (3)
1. the three dimensional network form chip heat conducting structure based on carbon nano-tube, form the thermal interface material layer (2) between chip layer (3) and heat conductor layer (1), it is characterized in that: described thermal interface material layer (2) is the thermal interface material layer based on carbon nano-tube, be made up of the heat through-hole (5) based on carbon nano-tube and the clathrum (4) based on carbon nano-tube, heat through-hole (5) based on carbon nano-tube forms chip layer (3) to the flash heat transfer passage based on the clathrum (4) of carbon nano-tube, thus, heat in chip layer (3) is quickly transferred on the clathrum (4) based on carbon nano-tube based on the heat through-hole (5) of carbon nano-tube, then, heat is through the carbon nano-tube (6 based on the horizontal cross in the clathrum (4) of carbon nano-tube and longitudinal direction, 7) whole heat conductor layer (1) is transferred to realize being uniformly distributed of heat, describedly to be made up of longitudinal carbon nano-tube (7) lamination of horizontal cross carbon nano-tube (6) lamination and level based on carbon nano-tube clathrum (4), carbon nano-tube (6) lamination of horizontal cross is superposed by two-layer carbon nano-tube and forms, and every one deck carbon nanotube layer is made up of some equally distributed carbon nano-tube, posts on the insulating barrier be connected with chip layer, longitudinal carbon nano-tube (7) lamination of level is superposed by two-layer carbon nano-tube and forms, and every one deck carbon nanotube layer is made up of some equally distributed carbon nano-tube, is positioned on horizontal cross carbon nano-tube (6) lamination.
2. the three dimensional network form chip heat conducting structure based on carbon nano-tube according to claim 1, is characterized in that: the carbon nano-tube bundle that the heat through-hole (5) of described carbon nano-tube is made up of 5*5 array carbon nano tube.
3. the three dimensional network form chip heat conducting structure based on carbon nano-tube according to claim 1 and 2, it is characterized in that: on chip layer (3), form the clathrum (4) based on carbon nano-tube, in this clathrum based on carbon nano-tube, vertical direction inserts the heat through-hole (5) based on carbon nano-tube.
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| DE102018218830B4 (en) * | 2018-11-05 | 2022-09-29 | Robert Bosch Gmbh | Thermally conductive connecting element, its use, cooling arrangement and heat distribution arrangement |
| CN111123064B (en) * | 2020-04-01 | 2020-06-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaN power device and reliability test method thereof |
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| CN1666335A (en) * | 2002-07-02 | 2005-09-07 | 英特尔公司 | Method and apparatus using nanotubes for cooling and grounding die |
| CN101083234A (en) * | 2006-05-26 | 2007-12-05 | 香港科技大学 | Heat dissipation structure with aligned carbon nanotube arrays and methods for manufacturing and use |
| CN102161814A (en) * | 2011-03-01 | 2011-08-24 | 复旦大学 | Preparation method of oriented carbon nano tube/ polymer composite membrane |
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| US7351360B2 (en) * | 2004-11-12 | 2008-04-01 | International Business Machines Corporation | Self orienting micro plates of thermally conducting material as component in thermal paste or adhesive |
| JP5746808B2 (en) * | 2007-11-22 | 2015-07-08 | 富士通株式会社 | Package and electronic device using carbon nanotube |
| JP2009258517A (en) * | 2008-04-18 | 2009-11-05 | Sharp Corp | Fixing device and image forming apparatus including the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1666335A (en) * | 2002-07-02 | 2005-09-07 | 英特尔公司 | Method and apparatus using nanotubes for cooling and grounding die |
| CN101083234A (en) * | 2006-05-26 | 2007-12-05 | 香港科技大学 | Heat dissipation structure with aligned carbon nanotube arrays and methods for manufacturing and use |
| CN102161814A (en) * | 2011-03-01 | 2011-08-24 | 复旦大学 | Preparation method of oriented carbon nano tube/ polymer composite membrane |
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Inventor after: Yan Ke Inventor after: Huang Jiale Inventor after: Zhang Wei Inventor after: Dan Junming Inventor after: Yang Shengqi Inventor before: Huang Jiale Inventor before: Zhang Wei Inventor before: Dan Junming Inventor before: Yang Shengqi |
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