CN102664171A - Three-dimensional grid-type chip heat conduction model based on carbon nano tube - Google Patents
Three-dimensional grid-type chip heat conduction model based on carbon nano tube Download PDFInfo
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- CN102664171A CN102664171A CN2012101387281A CN201210138728A CN102664171A CN 102664171 A CN102664171 A CN 102664171A CN 2012101387281 A CN2012101387281 A CN 2012101387281A CN 201210138728 A CN201210138728 A CN 201210138728A CN 102664171 A CN102664171 A CN 102664171A
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Abstract
The invention relates to a three-dimensional grid-type chip heat conduction model based on a carbon nano tube. The three-dimensional grid-type chip heat conduction model forms a heat interface material layer between a chip layer and a heat conduction device layer, wherein the heat interface material layer is based on the carbon nano tube and is composed of a heat through hole based on the carbon nano tube and a grid layer based on the carbon nano tube; the heat through hole based on the carbon nano tube forms a rapid heat transmission channel from the chip layer to the grid layer based on the carbon nano tube, thus heat on the chip layer is rapidly transferred to the grid layer based on the carbon nano tube by virtue of the heat through hole based on the carbon nano tube; and then the heat is transmitted to the whole chip layer by virtue of horizontally transverse and longitudinal carbon nano tubes arranged in the grid layer based on the carbon nano tube, so as to realize uniform distribution of the heat. By adopting the model disclosed by the invention, diffusion of the heat of the chip can be effectively realized, thus the chip can obtain uniform heat distribution.
Description
Technical field
The present invention relates to a kind of three dimensional network form chip heat conduction model based on CNT.CNT can be used as a kind of promising thermal interfacial material because of the pyroconductivity of its superelevation, so this paper proposes the new structure based on the chip cooling of CNT.In this structure, improve the heat diffusion between chip layer and the heat conductor through heat through-hole based on CNT, simultaneously through horizontal cross and longitudinally the CNT clathrum come the heat on the balance monoblock chip, reduce the peak temperature of chip.This structure not only can improve chip reliability, but also can prolong the life-span of chip.
Background technology
Along with device feature size gets into nanoscale, the integrated level of device constantly increases, thereby causes the high power consumption and the high-temperature problem of chip.High power consumption and high-temperature are having a strong impact on circuit performance, reliability and Chip Packaging.Therefore dispelling the heat becomes the maximum stumbling-block that can the performance of chip good.And in the entire heat dissipation problem, the thermal contact resistance from the chip layer to the thermal diffuser and between the radiator layer remains a problem that is difficult to overcome.
For overcoming the problems referred to above, existing scholar proposes novel chip model, promptly between chip layer and heat conductor layer, adds one deck thermal interface material layer.Novel thermal interfacial material and chip structure can be filled up the blank between the heat delivered face, have not only improved the heat performance, but also have strengthened circuit reliability, therefore also need continue to explore good thermal interfacial material and chip heat conduction model.Traditional thermal interfacial material mainly is to be made up of copper, has very high pyroconductivity than air, and therefore its thermal contact resistance is little comparatively speaking, so just can the temperature of heat intersection be reduced.
Because CNT has special construction, character such as electricity and calorifics have higher pyroconductivity and less thermal contact resistance than copper, so CNT is more suitable for making the composition material of thermal interfacial material and is added between chip and the heat conductor.Be we propose based on the thermal interfacial material of CNT model and heat through-hole with the too high problem of more effective solution chip temperature.
Summary of the invention
The present invention proposes a kind of three dimensional network form chip heat conduction model based on CNT, strengthens the heat dispersion of chip as the chip internal thermal interface material layer, thereby improves chip reliability.
Design of the present invention is following:
The present invention improves the heat diffusion between chip layer and the heat conductor layer through the heat through-hole based on CNT, simultaneously through horizontal cross and longitudinally the CNT clathrum come the heat on the balance monoblock chip, reduce peak temperature.Thereby effectively raise the heat dispersion of chip.
Conceive according to foregoing invention; The present invention adopts following technical proposals: a kind of three dimensional network form chip heat conduction model based on CNT; Constitute the thermal interface material layer between chip layer and the heat conductor layer; It is characterized in that: said thermal interface material layer is based on the thermal interface material layer of CNT, by forming based on the heat through-hole of CNT with based on the clathrum of CNT, constitutes chip layer to the flash heat transfer passage based on the clathrum of CNT based on the heat through-hole of CNT; Thereby; Heat through-hole based on CNT is transferred to the heat on the chip layer on the clathrum based on CNT fast, and then, heat is through being transferred to the even distribution of entire chip layer with the realization heat based on horizontal cross in the clathrum of CNT and CNT longitudinally.The carbon nano-tube bundle that the heat through-hole of said CNT is made up of the 5*5 array carbon nano tube.Saidly form by horizontal cross CNT lamination and the vertical CNT lamination of level based on the CNT clathrum; The CNT lamination of horizontal cross is made up of the stack of two-layer CNT, and each layer carbon nanotube layer is made up of some equally distributed CNTs, post with insulating barrier that chip layer links to each other on; The vertical CNT lamination of level is made up of two-layer CNT stack; Each layer carbon nanotube layer is made up of some equally distributed CNTs; Be positioned on the horizontal cross CNT lamination; On chip layer, form clathrum based on CNT, this based on the clathrum of CNT in vertical direction insert heat through-hole based on CNT.
1. fill heat through-hole based on carbon nano-tube bundle
Through the carbon nano-tube bundle through hole with the heat delivered on the silicon substrate to based on the CNT clathrum, thereby realize better heat conduction.
2. realize the chip Homogeneouslly-radiating based on the CNT clathrum
Through the carbon nano-tube bundle on level and the vertical direction with the transfer of heat in thermal source district to cooled region, thereby the heat of balance entire chip has improved chip cooling efficient.
The design and make easy
The present invention is by the CNT hole that generates level, vertical CNT hole and horizontal cross and longitudinally pith such as carbon nano-tube bundle node realize that hence one can see that, the present invention designs easily, manufacturing process is simple.
Description of drawings
Fig. 1 is based on the three dimensional network form chip heat conduction illustraton of model of CNT.
Fig. 2 is a carbon nano-tube bundle on substrate.
Fig. 3 is a carbon nano-tube on the hole down below.
Fig. 4 is the multi-form of CNT node.
Fig. 5 is based on the heat distribution of Alpha 21364 processor chips of CNT thermal management structure generation.
Fig. 6 is based on the heat distribution of the OpenSparc T1 processor chips of CNT thermal management structure generation.
Embodiment
The preferred embodiments of the present invention combine detailed description of the drawings following:
Embodiment one:
Referring to Fig. 1; This is based on the three dimensional network form chip heat conduction model of CNT; Constitute the thermal interface material layer (2) between chip layer (3) and the heat conductor layer (1); It is characterized in that: said thermal interface material layer (2) is based on the thermal interface material layer of CNT, by forming based on the heat through-hole (5) of CNT with based on the clathrum (4) of CNT, constitutes chip layer (3) to the flash heat transfer passage based on the clathrum (4) of CNT based on the heat through-hole (5) of CNT; Thereby; Heat through-hole (5) based on CNT is transferred to the heat on the chip layer (3) on the clathrum (4) based on CNT fast, and then, heat is through being transferred to the even distribution of entire chip layer (1) with the realization heat based on horizontal cross in the clathrum (4) of CNT and CNT (6,7) longitudinally.
Embodiment two:
Present embodiment and embodiment one are basic identical, and special feature is following:
The carbon nano-tube bundle that the heat through-hole of said CNT (5) is made up of the 5*5 array carbon nano tube.Saidly form by horizontal cross CNT (6) lamination and the vertical CNT of level (7) lamination based on CNT clathrum (4); The CNT of horizontal cross (6) lamination is made up of the stack of two-layer CNT, and each layer carbon nanotube layer is made up of some equally distributed CNTs, post with insulating barrier that chip layer links to each other on; The vertical CNT of level (7) lamination is made up of two-layer CNT stack, and each layer carbon nanotube layer is made up of some equally distributed CNTs, is positioned on horizontal cross CNT (6) lamination.On chip layer (3), form clathrum (4) based on CNT, this based on the clathrum of CNT in vertical direction insert heat through-hole (5) based on CNT.
Embodiment three:
Referring to Fig. 1, this three dimensional network form chip heat conduction structure of models based on CNT is following:
1. fill heat through-hole with carbon nano-tube bundle: based on the carbon nano-tube bundle that the heat through-hole (5) of CNT is made up of the 5*5 array carbon nano tube, will be inserted in based on the heat through-hole (5) of CNT between device layer (5) and the fin (1) is to be used for the heat delivered on the silicon substrate to the clathrum (4) based on CNT.Heat through-hole (5) need be evenly distributed on the silicon substrate simultaneously, if words pockety will influence its radiating efficiency.
2. CNT clathrum.Clathrum (4) based on CNT comprises cancellated carbon nano-tube bundle (horizontal cross and vertically discharging).Clathrum (4) based on CNT mainly is made up of horizontal cross CNT (6) lamination and the vertical CNT of level (7) lamination.The CNT of horizontal cross (6) lamination structure is made up of two-layer CNT stack, and single-layer carbon nano-tube is made up of some equally distributed CNTs, is placed on the insulating barrier that links to each other with chip layer (3).Level CNT (7) lamination longitudinally is made up of the stack of two-layer CNT, and single-layer carbon nano-tube is made up of some equally distributed CNTs, is placed on horizontal cross CNT (6) lamination, thereby constitutes the clathrum (4) of whole CNT.Fig. 1 specifies the CNT clathrum.This CNT clathrum structure can be transferred to heat conductor (1) through the carbon nano-tube bundle of vertical direction with heat; Through the carbon nano-tube bundle of level the hot-fluid in thermal source district is transferred to cooled region simultaneously; Temperature just can be sent to the monoblock chip like this, thereby reduces the peak temperature of chip.Because heat was diffused into temperature on the monoblock chip (3), so just can improve the heat diffusion area, thereby improve diffuser efficiency before being transferred on the heat conductor (1).
3. generate afterwards based on the clathrum (4) of CNT; Insert the heat through-hole (5) of vertical direction again, thereby form based on the three-dimensional grid type chip heat conduction model of CNT, this model needs three critical elements: (a) carbon nano-tube bundle on the vertical and horizontal direction; Like Fig. 2; The heat through-hole of (b) filling with carbon nano-tube bundle, like Fig. 3, (c) carbon nano-tube bundle vertical and level is connected to form grid.Heat through-hole (5) is filled by carbon nano-tube bundle, through deep reactive ion etch technology etching vias on silicon substrate.CNT is grown on the catalyst layer through the heat chemistry gaseous phase deposition and extends on the hole.Therefore, the carbon nano-tube bundle on the vertical direction can form on the hole, and is grown on the silicon substrate.Carbon nano-tube bundle on the horizontal direction but can not directly comprehensively obtain; Utilize the method for first carbon nano-tube bundle at this; CNT connects on their surface through control mode; Because two continuous CNTs can form through adding electron beam, this feasible molecular carbon nanotube node that can form various ways is as shown in Figure 4.And be the CNT hole of elder generation through the formation level in the present invention; Next generates vertical CNT hole; The carbon nano-tube bundle of regeneration level, the carbon nano-tube bundle on vertical and horizontal direction is set up node then, just can form the thermal management structure that the present invention proposes at last.
Fig. 5 is based on the heat distribution of Alpha 21364 processor chips that the three dimensional network form chip heat conduction model of CNT produces.Fig. 6 is based on the heat distribution of the OpenSparc T1 processor chips that the three dimensional network form chip heat conduction model of CNT produces.Their peak temperature is respectively 369K (96
oC) and 347K (73
oC) and Alpha 21364 processor chips under baseline design (in the situation that adds the thermal interfacial material of silicon between substrate and the heat conductor) and the peak temperature of OpenSparc T1 processor chips are respectively 415K (142
oC) and 368K (95
oC).Therefrom can find out based on the foundation of the three dimensional network form chip heat conduction model of CNT, make the peak temperature of Alpha 21364 processor chips and OpenSparc T1 processor chips reduce by 32% and 23% respectively.Explain that the present invention can effectively reduce the peak temperature of chip.
Claims (4)
1. the three dimensional network form chip heat based on CNT is conducted model; Constitute the thermal interface material layer (2) between chip layer (3) and the heat conductor layer (1); It is characterized in that: said thermal interface material layer (2) is based on the thermal interface material layer of CNT; By forming based on the heat through-hole (5) of CNT with based on the clathrum (4) of CNT; Constitute chip layer (3) to flash heat transfer passage based on the heat through-hole (5) of CNT based on the clathrum (4) of CNT, thereby, based on the heat through-hole (5) of CNT the heat on the chip layer (3) is transferred on the clathrum (4) based on CNT fast; Then, heat is through being transferred to the even distribution of entire chip layer (1) with the realization heat based on horizontal cross in the clathrum (4) of CNT and CNT (6,7) longitudinally.
2. the three dimensional network form chip heat conduction model based on CNT according to claim 1 is characterized in that: the carbon nano-tube bundle that the heat through-hole of said CNT (5) is made up of the 5*5 array carbon nano tube.
3. the three dimensional network form chip heat conduction model based on CNT according to claim 1 is characterized in that: saidly be made up of horizontal cross CNT (6) lamination and the vertical CNT of level (7) lamination based on CNT clathrum (4); The CNT of horizontal cross (6) lamination is made up of the stack of two-layer CNT, and each layer carbon nanotube layer is made up of some equally distributed CNTs, post with insulating barrier that chip layer links to each other on; The vertical CNT of level (7) lamination is made up of two-layer CNT stack, and each layer carbon nanotube layer is made up of some equally distributed CNTs, is positioned on horizontal cross CNT (6) lamination.
4. according to claim 1 or 2 or 3, described three dimensional network form chip heat conduction model based on CNT; It is characterized in that: on chip layer (3), form clathrum (4) based on CNT, this based on the clathrum of CNT in vertical direction insert heat through-hole (5) based on CNT.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111123064A (en) * | 2020-04-01 | 2020-05-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaN power device and reliability test method thereof |
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| CN101083234A (en) * | 2006-05-26 | 2007-12-05 | 香港科技大学 | Heat dissipation structure with aligned carbon nanotube arrays and methods for manufacturing and use |
| JP2009130113A (en) * | 2007-11-22 | 2009-06-11 | Fujitsu Ltd | Package and electronic device using carbon nanotube |
| JP2009258517A (en) * | 2008-04-18 | 2009-11-05 | Sharp Corp | Fixing device and image forming apparatus including the same |
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Patent Citations (6)
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|---|---|---|---|---|
| CN1666335A (en) * | 2002-07-02 | 2005-09-07 | 英特尔公司 | Method and apparatus using nanotubes for cooling and grounding die |
| US20060112857A1 (en) * | 2004-11-12 | 2006-06-01 | International Business Machines Corporation | Self orienting micro plates of thermally conducting material as component in thermal paste or adhesive |
| CN101083234A (en) * | 2006-05-26 | 2007-12-05 | 香港科技大学 | Heat dissipation structure with aligned carbon nanotube arrays and methods for manufacturing and use |
| JP2009130113A (en) * | 2007-11-22 | 2009-06-11 | Fujitsu Ltd | Package and electronic device using carbon nanotube |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111123064A (en) * | 2020-04-01 | 2020-05-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaN power device and reliability test method thereof |
| CN111123064B (en) * | 2020-04-01 | 2020-06-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaN power device and reliability test method thereof |
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Inventor after: Yan Ke Inventor after: Huang Jiale Inventor after: Zhang Wei Inventor after: Dan Junming Inventor after: Yang Shengqi Inventor before: Huang Jiale Inventor before: Zhang Wei Inventor before: Dan Junming Inventor before: Yang Shengqi |
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