CN102656666B - 混合气体注射器 - Google Patents

混合气体注射器 Download PDF

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Publication number
CN102656666B
CN102656666B CN201080042558.6A CN201080042558A CN102656666B CN 102656666 B CN102656666 B CN 102656666B CN 201080042558 A CN201080042558 A CN 201080042558A CN 102656666 B CN102656666 B CN 102656666B
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CN
China
Prior art keywords
hole
gas injector
gas
connector
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201080042558.6A
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English (en)
Chinese (zh)
Other versions
CN102656666A (zh
Inventor
F·欧莫尔
K·威廉姆斯
N·乐
V·布朗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hangzhou Dunyuan Poly Core Semiconductor Technology Co ltd
Original Assignee
Magnetic Fluid Technology (usa) Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Magnetic Fluid Technology (usa) Corp filed Critical Magnetic Fluid Technology (usa) Corp
Publication of CN102656666A publication Critical patent/CN102656666A/zh
Application granted granted Critical
Publication of CN102656666B publication Critical patent/CN102656666B/zh
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201080042558.6A 2009-09-25 2010-09-24 混合气体注射器 Active CN102656666B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US27736109P 2009-09-25 2009-09-25
US61/277,361 2009-09-25
PCT/US2010/050217 WO2011038242A2 (en) 2009-09-25 2010-09-24 Hybrid gas injector

Publications (2)

Publication Number Publication Date
CN102656666A CN102656666A (zh) 2012-09-05
CN102656666B true CN102656666B (zh) 2015-06-24

Family

ID=43796508

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080042558.6A Active CN102656666B (zh) 2009-09-25 2010-09-24 混合气体注射器

Country Status (6)

Country Link
US (1) US20110232568A1 (enExample)
EP (1) EP2481082B1 (enExample)
JP (1) JP5802672B2 (enExample)
KR (1) KR20120085745A (enExample)
CN (1) CN102656666B (enExample)
WO (1) WO2011038242A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
UA113760C2 (xx) * 2012-04-27 2017-03-10 Кожух для нанесення металооксидного покриття на скляні ємності осадженням пари
JP6176732B2 (ja) * 2014-03-20 2017-08-09 株式会社日立国際電気 ガス供給部、基板処理装置及び半導体装置の製造方法
US20170167023A1 (en) * 2015-12-09 2017-06-15 Lam Research Corporation Silicon or silicon carbide gas injector for substrate processing systems
AT518081B1 (de) * 2015-12-22 2017-07-15 Sico Tech Gmbh Injektor aus Silizium für die Halbleiterindustrie
US11993847B2 (en) * 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR20230026148A (ko) * 2021-08-17 2023-02-24 삼성전자주식회사 기판 처리 장치 및 이를 이용한 반도체 소자 제조 방법
CN115386861B (zh) * 2022-10-27 2023-04-07 盛吉盛(宁波)半导体科技有限公司 一种化学气相沉积设备的导气管及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5441570A (en) * 1993-06-22 1995-08-15 Jein Technics Co., Ltd. Apparatus for low pressure chemical vapor deposition
US5578132A (en) * 1993-07-07 1996-11-26 Tokyo Electron Kabushiki Kaisha Apparatus for heat treating semiconductors at normal pressure and low pressure
JP2001230212A (ja) * 2000-02-16 2001-08-24 Tokyo Electron Ltd 縦型熱処理装置
US6455395B1 (en) * 2000-06-30 2002-09-24 Integrated Materials, Inc. Method of fabricating silicon structures including fixtures for supporting wafers
US6830449B1 (en) * 2004-02-02 2004-12-14 Sis Microelectronics Corporation Injector robot for replacing a gas injector in a furnace

Family Cites Families (24)

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US3761114A (en) * 1971-08-30 1973-09-25 Victaulic Co Ltd Pipe to flange couplings
US3942141A (en) * 1972-05-26 1976-03-02 Licentia Patent-Verwaltungs-G.M.B.H. Flange
FR2490246A1 (fr) * 1980-09-17 1982-03-19 Cit Alcatel Dispositif de deposition chimique activee sous plasma
US4448448A (en) * 1982-03-22 1984-05-15 Raphael Theresa Pollia Coupling system
JPH0719143Y2 (ja) * 1990-04-26 1995-05-01 日本エー・エス・エム株式会社 ガス導入装置を有するｃｖｄ装置
US5318633A (en) * 1991-03-07 1994-06-07 Tokyo Electron Sagami Limited Heat treating apparatus
JPH04280420A (ja) * 1991-03-07 1992-10-06 Toshiba Corp 熱処理装置
JPH05243161A (ja) * 1992-01-29 1993-09-21 Nec Corp 気相成長装置及びエピタキシャル膜の成長方法
JPH09260298A (ja) * 1996-03-18 1997-10-03 Kokusai Electric Co Ltd 半導体製造装置の反応ガス導入ノズル支持構造
JPH10284426A (ja) * 1997-04-10 1998-10-23 Kokusai Electric Co Ltd ノズル
JP2001267255A (ja) * 2000-03-21 2001-09-28 Nec Corp 気相成長装置及び気相成長方法
JP2001351871A (ja) * 2000-06-09 2001-12-21 Asm Japan Kk 半導体製造装置
US6450346B1 (en) 2000-06-30 2002-09-17 Integrated Materials, Inc. Silicon fixtures for supporting wafers during thermal processing
JP3572247B2 (ja) * 2000-10-06 2004-09-29 東芝セラミックス株式会社 半導体熱処理炉用ガス導入管
JP2002334868A (ja) * 2001-05-10 2002-11-22 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
US20020170487A1 (en) * 2001-05-18 2002-11-21 Raanan Zehavi Pre-coated silicon fixtures used in a high temperature process
US7083694B2 (en) * 2003-04-23 2006-08-01 Integrated Materials, Inc. Adhesive of a silicon and silica composite particularly useful for joining silicon parts
JP2006080256A (ja) * 2004-09-09 2006-03-23 Hitachi Kokusai Electric Inc 基板処理装置
WO2006030857A1 (ja) * 2004-09-16 2006-03-23 Hitachi Kokusai Electric Inc. 熱処理装置及び基板の製造方法
US20060185589A1 (en) * 2005-02-23 2006-08-24 Raanan Zehavi Silicon gas injector and method of making
US7972703B2 (en) * 2005-03-03 2011-07-05 Ferrotec (Usa) Corporation Baffle wafers and randomly oriented polycrystalline silicon used therefor
US7910494B2 (en) * 2006-03-29 2011-03-22 Tokyo Electron Limited Thermal processing furnace, gas delivery system therefor, and methods for delivering a process gas thereto
US8070880B2 (en) * 2007-10-22 2011-12-06 Hitachi Kokusai Electric, Inc. Substrate processing apparatus
JP5237133B2 (ja) * 2008-02-20 2013-07-17 株式会社日立国際電気 基板処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5441570A (en) * 1993-06-22 1995-08-15 Jein Technics Co., Ltd. Apparatus for low pressure chemical vapor deposition
US5578132A (en) * 1993-07-07 1996-11-26 Tokyo Electron Kabushiki Kaisha Apparatus for heat treating semiconductors at normal pressure and low pressure
JP2001230212A (ja) * 2000-02-16 2001-08-24 Tokyo Electron Ltd 縦型熱処理装置
US6455395B1 (en) * 2000-06-30 2002-09-24 Integrated Materials, Inc. Method of fabricating silicon structures including fixtures for supporting wafers
US6830449B1 (en) * 2004-02-02 2004-12-14 Sis Microelectronics Corporation Injector robot for replacing a gas injector in a furnace

Also Published As

Publication number Publication date
WO2011038242A2 (en) 2011-03-31
EP2481082A4 (en) 2013-07-10
CN102656666A (zh) 2012-09-05
EP2481082A2 (en) 2012-08-01
JP2013506300A (ja) 2013-02-21
JP5802672B2 (ja) 2015-10-28
EP2481082B1 (en) 2017-06-21
KR20120085745A (ko) 2012-08-01
WO2011038242A3 (en) 2011-06-16
US20110232568A1 (en) 2011-09-29

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
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TR01 Transfer of patent right

Effective date of registration: 20220124

Address after: Building C, No. 668, BINKANG Road, Binjiang District, Hangzhou, Zhejiang

Patentee after: Hangzhou dunyuan poly core semiconductor technology Co.,Ltd.

Address before: New Hampshire

Patentee before: FERROTEC (USA) Corp.