CN102646627B - 先进硅处理中的软错误率(ser)减少 - Google Patents

先进硅处理中的软错误率(ser)减少 Download PDF

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Publication number
CN102646627B
CN102646627B CN201210035521.1A CN201210035521A CN102646627B CN 102646627 B CN102646627 B CN 102646627B CN 201210035521 A CN201210035521 A CN 201210035521A CN 102646627 B CN102646627 B CN 102646627B
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China
Prior art keywords
boron
rich
substrate
semiconductor device
conductive contact
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Chinese (zh)
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CN102646627A (zh
Inventor
李永辉
蔡超杰
吴佳芳
李正中
曲维正
桂东
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Priority claimed from US13/031,897 external-priority patent/US8633109B2/en
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
CN201210035521.1A 2011-02-22 2012-02-16 先进硅处理中的软错误率(ser)减少 Active CN102646627B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/031,897 2011-02-22
US13/031,897 US8633109B2 (en) 2010-08-04 2011-02-22 Soft error rate (SER) reduction in advanced silicon processes

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CN102646627A CN102646627A (zh) 2012-08-22
CN102646627B true CN102646627B (zh) 2015-04-01

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KR (1) KR101333914B1 (ko)
CN (1) CN102646627B (ko)
TW (1) TWI475694B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI689920B (zh) * 2014-01-08 2020-04-01 日商新力股份有限公司 半導體裝置及記憶體電路
US9564359B2 (en) 2014-07-17 2017-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive structure and method of forming the same
KR102234559B1 (ko) * 2016-12-15 2021-03-31 어플라이드 머티어리얼스, 인코포레이티드 핵형성을 사용하지 않는 갭 충전 ald 프로세스

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5136355A (en) * 1987-11-25 1992-08-04 Marconi Electronic Devices Limited Interconnecting layer on a semiconductor substrate
US5395783A (en) * 1993-02-16 1995-03-07 Texas Instruments Incorporated Electronic device and process achieving a reduction in alpha particle emissions from boron-based compounds essentially free of boron-10
US5973372A (en) * 1997-12-06 1999-10-26 Omid-Zohoor; Farrokh Silicided shallow junction transistor formation and structure with high and low breakdown voltages
CN1662992A (zh) * 2002-06-28 2005-08-31 前进应用科学股份有限公司 减少软错误率的负微分电阻元件和存储器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6482733B2 (en) * 2000-05-15 2002-11-19 Asm Microchemistry Oy Protective layers prior to alternating layer deposition
KR101216381B1 (ko) * 2005-12-21 2012-12-28 주성엔지니어링(주) 박막 형성 방법
US7560379B2 (en) * 2006-02-07 2009-07-14 Texas Instruments Incorporated Semiconductive device fabricated using a raised layer to silicide the gate
JP2011014667A (ja) * 2009-07-01 2011-01-20 Panasonic Corp 半導体装置及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5136355A (en) * 1987-11-25 1992-08-04 Marconi Electronic Devices Limited Interconnecting layer on a semiconductor substrate
US5395783A (en) * 1993-02-16 1995-03-07 Texas Instruments Incorporated Electronic device and process achieving a reduction in alpha particle emissions from boron-based compounds essentially free of boron-10
US5973372A (en) * 1997-12-06 1999-10-26 Omid-Zohoor; Farrokh Silicided shallow junction transistor formation and structure with high and low breakdown voltages
CN1662992A (zh) * 2002-06-28 2005-08-31 前进应用科学股份有限公司 减少软错误率的负微分电阻元件和存储器

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Publication number Publication date
KR101333914B1 (ko) 2013-11-27
TW201246545A (en) 2012-11-16
TWI475694B (zh) 2015-03-01
KR20120096413A (ko) 2012-08-30
CN102646627A (zh) 2012-08-22

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