CN1026377C - 图象传感器 - Google Patents

图象传感器 Download PDF

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CN1026377C
CN1026377C CN91100218A CN91100218A CN1026377C CN 1026377 C CN1026377 C CN 1026377C CN 91100218 A CN91100218 A CN 91100218A CN 91100218 A CN91100218 A CN 91100218A CN 1026377 C CN1026377 C CN 1026377C
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bipolar transistor
bipolar
output
image sensor
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CN1053340A (zh
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町田聪
河原行人
向中野浩志
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Seiko Instruments Inc
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Seiko Instruments Inc
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14681—Bipolar transistor imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H04N25/633—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current by using optical black pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/701—Line sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Facsimile Heads (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

由工作双极晶体管阵列构成的图象传感器。在工作双极晶体管旁形成另一光屏蔽的虚设双极晶体管阵列。将复位开关与工作和虚设双极晶体管的基区相连以减少暗图象输出的变化，确保输出信号线性，消除图象存储。

Description

本发明涉及一种在传真机和图象扫描仪中使用的将光信号转变为电信号的图象传感器。
通常图象传感器以这样方式工作，即将光生载流子存储在双极晶体管的基极并从其发射极取出电信号。图5示出了这种常规图象传感器的一个例子。NPN型双极晶体管1有一保持在恒定电压Vcc的集电极。双极晶体管1的发射极3通过象素选择开关4与公共信号线5相连。双极晶体管1的基极6保持在悬空状态。依次接通象素选择开关4以读出存储在各个双极晶体管1中的光生载流子。在读操作期间，双极晶体管根据其放大功能输出几十到几百倍于存储的光生载流子的电荷。
在上述常规图象传感器中，由于双极晶体管1基极6保持在悬空状态，在前面输出操作后，一些电荷遗留在基极中，从而影响下一次输出操作产生存储图象现象。并且，由于发射结必须正向偏置使晶体管工作，一部分光生载流子用于发射结的正向偏置。因而如图4所示在较低曝光量范围内输出功率不能线性增大。
本发明的目的是消除存储图象现象并改善图象传感器的输出特性。本发明的图象传感器由主双极晶体管阵列和屏蔽式掩盖的附加双极晶体管阵列构成，该附加双极晶体管阵列与主双极晶体管阵列平行相邻。复位开关与每个主晶体管和附加晶体管的基极相连。
在上面结构的图象传感器中，对每一象素进行输出操作后，与平行阵列中相应的双极晶体管对相连的相应复位开关对使相应的基极恢复到恒定电压，从而使双极晶体管预置给定的状态。因此，该结构能有效地避免由基极区的残留电荷引起的存储图象现象。并且将基极的复位电压置于相对高的电平使得对基极充分充电以对发射结正向偏置。 通过如此操作，在相对低的曝光范围输出功率也与入射光强成比例。
图1是示出本发明图象传感器一个实施例的电路图;图2是本发明图象传感器上基区和屏蔽薄膜布局的示意图;图3是示出本发明图象传感器光电转换特性的曲线;图4是常规图象传感器的光电转换特性的曲线;图5是常规图象传感器的结构图。
下面将结合附图对本发明的实施例加以描述。参照图1，本发明的图象传感器含有由双极晶体管7构成的主阵列，每个晶体管的集电极保持在恒定电压Vcc。将每个双极晶体管7的基区开放或暴露使感应的光生载流子存储在该基极。该基极与相应的复位开关8相连并通过复位开关8加有基极复位电压VB。每个双极晶体管7的发射极通过象素选择开关9与公共图象信号线10相连。在阵列中线状排列着许多双极晶体管7，并将另外许多虚设（dummy）双极晶体管11对应于工作双极晶体管7也线状排列在阵列中。虚设双极晶体管11与工作双极晶体管7具有相同结构，但用由铝等构成的屏蔽薄膜将其基区遮蔽或覆盖。每个虚设双极晶体管11有一与Vcc线相连的集电极，通过复位开关12接收复位电压VB的基极和通过另一象素选择开关13与公共补偿信号线14相连的发射极。
图2示出了上述结构的图象传感器中基区和屏蔽薄膜的布局。用直线排列的外露基区16形成半导体芯片15，所述基区16确定了入射光的接收区。虚设双极晶体管的屏蔽基区17平行邻接于外露基区16。虚设双极晶体管的基区17由铝制光屏蔽薄膜18遮盖，有选择地将该薄膜18从工作双极晶体管的基区16移去。
下面，参照图1对本发明的图象传感器的操作进行描述。与相应一对工作和虚设双极晶体管7和11相连的一对象素选择开关9和13同时接通使该对晶体管7和11能分别对公共信号线10和14输出电荷。相继接通成对象素选择开关9和13使图象信号和补偿信号按时序分别输给 公共信号线10和14。在输出或读出操作后，该对双极晶体管7和11的发射极分别通过象素选择开关9和13保持恒定电压。然而有一些电荷残留在其基极。
然后将该对基极复位开关8和12接通以使该对双极晶体管7和11的基极电压设置为VB。再随后将基极复位开关对8和12及象素选择开关对9和13切断使工作双极晶体管7被初始化以实现重新响应入射光进行将光生载流子存储在其基区的操作。既然虚设双极晶体管11的基极被光屏蔽，而没有存储光生载流子以致于虚设二极晶体管11连续提供一个具有与工作双极晶体管7的暗图象信号相同电平的补偿信号。由于当接通象素选择开关9和13时将电压VB设置得在相对高的电平使发射结充分正向偏置，双极晶体管7的输出在较低曝光区也具有好的线性输出。将双极晶体管对7和11的基极复位到VB进行读操作，因此前面操作的影响完全除去从而避免了存储图象现象。
图3示出了本发明图象传感器光电转换特性。线a为工作双极晶体管7的光电转换特性，线b为虚设双极晶体管11的光电转换特性。暗图象信号的补偿电压VD根据象素位置变化;然而由于双极晶体管对7和11位置相互很近因而它们之间的补偿电压VD相同。因此，可将公共图象信号线10和公共补偿信号线14接到微分放大器（未示出），该放大器提供一个与入射光量或强度成正比的输出信号并抑制暗图象输出的变化。
每个开关的操作时间可由扫描电路控制，可将该扫描电路集成到同一半导体芯片。将微分放大器也集成到同一半导体芯片。
如上所述，根据本发明，提供了一个有效地抑制了暗图象输出变化的图象传感器的简单结构，确保输出信号有好的线性，并消除了图象存储。

Claims (1)

1、一种图象传感器，它包含：用于实现对入射光进行光电转换的工作双极晶体管；另一对入射光进行光屏蔽位于相应的工作双极晶体管旁的虚设双极晶体管，从而构成工作双极晶体管和虚设双极晶体管对；与相应的晶体管对在基区相连的复位开关对，共同使每一工作和虚设晶体管对复位。
CN91100218A 1990-01-10 1991-01-09 图象传感器 Expired - Lifetime CN1026377C (zh)

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JP02003241A JP3120237B2 (ja) 1990-01-10 1990-01-10 イメージセンサ
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Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5153421A (en) * 1991-11-04 1992-10-06 Xerox Corporation Architecture for analog and digital image sensor arrays
JP2768453B2 (ja) * 1992-03-03 1998-06-25 キヤノン株式会社 固体撮像装置及びそれを用いた装置
JP2991039B2 (ja) * 1994-06-16 1999-12-20 三菱電機株式会社 密着型イメージセンサ
KR100332221B1 (ko) * 1994-06-22 2002-08-08 에스케이 주식회사 에틸렌중합체제조용촉매의제조방법과이를이용한에틸렌중합체의제조방법
JPH0982978A (ja) * 1995-09-20 1997-03-28 Hitachi Ltd 半導体装置及びこれを用いた液晶表示装置
GB2318448B (en) * 1996-10-18 2002-01-16 Simage Oy Imaging detector and method of production
CN1057886C (zh) * 1996-11-21 2000-10-25 明碁电脑股份有限公司 一种图像撷取装置及其控制方法
US8262900B2 (en) 2006-12-14 2012-09-11 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
GB2457851B (en) 2006-12-14 2011-01-05 Ion Torrent Systems Inc Methods and apparatus for measuring analytes using large scale fet arrays
US8349167B2 (en) 2006-12-14 2013-01-08 Life Technologies Corporation Methods and apparatus for detecting molecular interactions using FET arrays
US11339430B2 (en) 2007-07-10 2022-05-24 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US20100301398A1 (en) 2009-05-29 2010-12-02 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US20100137143A1 (en) 2008-10-22 2010-06-03 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US8776573B2 (en) 2009-05-29 2014-07-15 Life Technologies Corporation Methods and apparatus for measuring analytes
US20120261274A1 (en) 2009-05-29 2012-10-18 Life Technologies Corporation Methods and apparatus for measuring analytes
CN106932456B (zh) 2010-06-30 2020-02-21 生命科技公司 用于测试isfet阵列的方法和装置
US8455927B2 (en) 2010-06-30 2013-06-04 Life Technologies Corporation One-transistor pixel array with cascoded column circuit
TWI580955B (zh) 2010-06-30 2017-05-01 生命技術公司 離子感測電荷累積電路及方法
US11307166B2 (en) 2010-07-01 2022-04-19 Life Technologies Corporation Column ADC
CN103168341B (zh) 2010-07-03 2016-10-05 生命科技公司 具有轻度掺杂的排出装置的化学敏感的传感器
WO2012036679A1 (en) 2010-09-15 2012-03-22 Life Technologies Corporation Methods and apparatus for measuring analytes
CN105911126B (zh) * 2010-09-24 2018-12-18 生命科技公司 匹配的晶体管对电路
US9970984B2 (en) 2011-12-01 2018-05-15 Life Technologies Corporation Method and apparatus for identifying defects in a chemical sensor array
US8786331B2 (en) 2012-05-29 2014-07-22 Life Technologies Corporation System for reducing noise in a chemical sensor array
US9080968B2 (en) 2013-01-04 2015-07-14 Life Technologies Corporation Methods and systems for point of use removal of sacrificial material
US9841398B2 (en) 2013-01-08 2017-12-12 Life Technologies Corporation Methods for manufacturing well structures for low-noise chemical sensors
US8963216B2 (en) 2013-03-13 2015-02-24 Life Technologies Corporation Chemical sensor with sidewall spacer sensor surface
JP6671274B2 (ja) 2013-03-15 2020-03-25 ライフ テクノロジーズ コーポレーション 薄伝導性素子を有する化学装置
US9835585B2 (en) 2013-03-15 2017-12-05 Life Technologies Corporation Chemical sensor with protruded sensor surface
WO2014149780A1 (en) 2013-03-15 2014-09-25 Life Technologies Corporation Chemical sensor with consistent sensor surface areas
US20140336063A1 (en) 2013-05-09 2014-11-13 Life Technologies Corporation Windowed Sequencing
US10458942B2 (en) 2013-06-10 2019-10-29 Life Technologies Corporation Chemical sensor array having multiple sensors per well
US10379079B2 (en) 2014-12-18 2019-08-13 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
TWI832669B (zh) 2014-12-18 2024-02-11 美商生命技術公司 具有傳輸器組態的高資料速率積體電路
US10077472B2 (en) 2014-12-18 2018-09-18 Life Technologies Corporation High data rate integrated circuit with power management

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4567529A (en) * 1983-10-26 1986-01-28 Matsushita Electric Industrial Co., Ltd. Image sensor
JPH07120767B2 (ja) * 1986-09-19 1995-12-20 キヤノン株式会社 光電変換装置
JP2564133B2 (ja) * 1987-04-17 1996-12-18 オリンパス光学工業株式会社 固体撮像装置
US4916307A (en) * 1987-12-15 1990-04-10 Fuji Electric Co., Ltd. Light intensity detecting circuit with dark current compensation

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JP3120237B2 (ja) 2000-12-25
JPH03208460A (ja) 1991-09-11
US5151587A (en) 1992-09-29
KR920000188A (ko) 1992-01-10
CN1053340A (zh) 1991-07-24
EP0437340A3 (en) 1992-01-02
EP0437340A2 (en) 1991-07-17

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