CN102637704B - 光电转换装置和图像感测系统 - Google Patents

光电转换装置和图像感测系统 Download PDF

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Publication number
CN102637704B
CN102637704B CN201210027705.3A CN201210027705A CN102637704B CN 102637704 B CN102637704 B CN 102637704B CN 201210027705 A CN201210027705 A CN 201210027705A CN 102637704 B CN102637704 B CN 102637704B
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refractive index
layer
index
photoelectric conversion
film
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Chinese (zh)
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CN102637704A (zh
Inventor
小林昌弘
栗原政树
市川武史
关根康弘
篠原真人
加藤太朗
门间玄三
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
CN201210027705.3A 2011-02-09 2012-02-09 光电转换装置和图像感测系统 Active CN102637704B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011026345 2011-02-09
JP2011-026345 2011-02-09
JP2011223303A JP5372102B2 (ja) 2011-02-09 2011-10-07 光電変換装置および撮像システム
JP2011-223303 2011-10-07

Publications (2)

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CN102637704A CN102637704A (zh) 2012-08-15
CN102637704B true CN102637704B (zh) 2015-04-29

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US (1) US9293493B2 (https=)
JP (1) JP5372102B2 (https=)
CN (1) CN102637704B (https=)

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WO2021062663A1 (zh) 2019-09-30 2021-04-08 Oppo广东移动通信有限公司 图像传感器、摄像头组件及移动终端
CN112824956A (zh) * 2019-11-21 2021-05-21 三赢科技（深圳）有限公司 透光薄片、激光投射模组、深度相机以及电子装置
US20230253518A1 (en) * 2020-08-27 2023-08-10 Compoundtek Pte. Ltd. Semiconductor device and fabricating method therefor
TWI807248B (zh) * 2021-01-22 2023-07-01 財團法人國家實驗研究院 具有增強感光效果之聚光結構
WO2022168523A1 (ja) * 2021-02-02 2022-08-11 株式会社ジャパンディスプレイ 検出装置及び検出装置の製造方法
EP4318590A4 (en) * 2021-03-31 2025-03-05 Sony Semiconductor Solutions Corporation SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE
CN112885859A (zh) * 2021-03-31 2021-06-01 华虹半导体(无锡)有限公司 Cmos图像传感器
US11594647B2 (en) * 2021-04-21 2023-02-28 National Applied Research Laboratories Light-concentrating structure with photosensitivity enhancing effect
CN115224055A (zh) * 2021-04-21 2022-10-21 谢远达 具有增强感光效果的聚光结构
CN115825927A (zh) * 2022-03-29 2023-03-21 神盾股份有限公司 距离感测模块
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Also Published As

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JP5372102B2 (ja) 2013-12-18
CN102637704A (zh) 2012-08-15
JP2012182432A (ja) 2012-09-20
US20120200728A1 (en) 2012-08-09
US9293493B2 (en) 2016-03-22

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