CN102637638B - 一种薄膜晶体管阵列基板及其制作方法 - Google Patents
一种薄膜晶体管阵列基板及其制作方法 Download PDFInfo
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- CN102637638B CN102637638B CN201210132092.XA CN201210132092A CN102637638B CN 102637638 B CN102637638 B CN 102637638B CN 201210132092 A CN201210132092 A CN 201210132092A CN 102637638 B CN102637638 B CN 102637638B
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- 239000000758 substrate Substances 0.000 title claims abstract description 56
- 239000010409 thin film Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 68
- 239000002184 metal Substances 0.000 claims abstract description 68
- 238000000034 method Methods 0.000 claims abstract description 44
- 239000004065 semiconductor Substances 0.000 claims abstract description 34
- 238000000059 patterning Methods 0.000 claims abstract description 23
- 238000000151 deposition Methods 0.000 claims abstract description 13
- 238000009413 insulation Methods 0.000 claims description 35
- 239000004973 liquid crystal related substance Substances 0.000 claims description 25
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 9
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
- 239000011733 molybdenum Substances 0.000 claims description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- 238000001039 wet etching Methods 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000012774 insulation material Substances 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 127
- 239000000463 material Substances 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
Abstract
Description
Claims (9)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210132092.XA CN102637638B (zh) | 2012-04-28 | 2012-04-28 | 一种薄膜晶体管阵列基板及其制作方法 |
PCT/CN2012/075232 WO2013159396A1 (zh) | 2012-04-28 | 2012-05-09 | 一种薄膜晶体管阵列基板及其制作方法 |
US13/574,248 US9048148B2 (en) | 2012-04-28 | 2012-05-09 | Method of manufacturing TFT array using multi-tone mask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210132092.XA CN102637638B (zh) | 2012-04-28 | 2012-04-28 | 一种薄膜晶体管阵列基板及其制作方法 |
Publications (2)
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CN102637638A CN102637638A (zh) | 2012-08-15 |
CN102637638B true CN102637638B (zh) | 2014-02-26 |
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CN201210132092.XA Active CN102637638B (zh) | 2012-04-28 | 2012-04-28 | 一种薄膜晶体管阵列基板及其制作方法 |
Country Status (2)
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CN (1) | CN102637638B (zh) |
WO (1) | WO2013159396A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106711159B (zh) * | 2017-03-28 | 2019-09-03 | 上海天马微电子有限公司 | 阵列基板和阵列基板的制作方法 |
CN107678246B (zh) * | 2017-09-07 | 2020-10-27 | 武汉华星光电半导体显示技术有限公司 | 一种曝光方法及图案化目标膜层的方法 |
CN111725250B (zh) * | 2020-06-29 | 2023-11-07 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示面板 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101807552A (zh) * | 2010-03-16 | 2010-08-18 | 信利半导体有限公司 | 一种半透射式tft阵列基板制造方法 |
CN101995711A (zh) * | 2009-08-11 | 2011-03-30 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板及其制造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4101533B2 (ja) * | 2002-03-01 | 2008-06-18 | 株式会社半導体エネルギー研究所 | 半透過型の液晶表示装置の作製方法 |
JP4096955B2 (ja) * | 2003-01-17 | 2008-06-04 | セイコーエプソン株式会社 | 液晶表示装置、液晶表示装置の製造方法および電子機器 |
JP2005173106A (ja) * | 2003-12-10 | 2005-06-30 | Seiko Epson Corp | 電気光学装置及びその製造方法 |
KR101167304B1 (ko) * | 2004-12-31 | 2012-07-19 | 엘지디스플레이 주식회사 | 프린지 필드 스위칭 타입의 박막 트랜지스터 기판 및 그제조 방법 |
US7821613B2 (en) * | 2005-12-28 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
KR101281918B1 (ko) * | 2006-05-17 | 2013-07-03 | 엘지디스플레이 주식회사 | 반투과형 다이오드 기판 및 그 제조 방법 |
CN102148195B (zh) * | 2010-04-26 | 2013-05-01 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板及其制造方法 |
CN102569192B (zh) * | 2012-03-06 | 2014-04-09 | 深圳市华星光电技术有限公司 | 半穿半反液晶显示器的阵列基板制造方法 |
CN102637637B (zh) * | 2012-04-28 | 2014-03-26 | 深圳市华星光电技术有限公司 | 一种薄膜晶体管阵列基板及其制作方法 |
-
2012
- 2012-04-28 CN CN201210132092.XA patent/CN102637638B/zh active Active
- 2012-05-09 WO PCT/CN2012/075232 patent/WO2013159396A1/zh active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101995711A (zh) * | 2009-08-11 | 2011-03-30 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板及其制造方法 |
CN101807552A (zh) * | 2010-03-16 | 2010-08-18 | 信利半导体有限公司 | 一种半透射式tft阵列基板制造方法 |
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WO2013159396A1 (zh) | 2013-10-31 |
CN102637638A (zh) | 2012-08-15 |
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PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address |
Address after: 518132 No. 9-2 Ming Avenue, Guangming New District, Guangdong, Shenzhen Patentee after: TCL Huaxing Photoelectric Technology Co.,Ltd. Address before: 518132 No. 9-2 Ming Avenue, Guangming New District, Guangdong, Shenzhen Patentee before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
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CP03 | Change of name, title or address | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210309 Address after: No.109, Kangping Road, Liuyang economic and Technological Development Zone, Changsha, Hunan 410300 Patentee after: Changsha Huike optoelectronics Co., Ltd Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: TCL Huaxing Photoelectric Technology Co.,Ltd. |
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TR01 | Transfer of patent right |