CN102629602A - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
- Publication number
- CN102629602A CN102629602A CN2012100214923A CN201210021492A CN102629602A CN 102629602 A CN102629602 A CN 102629602A CN 2012100214923 A CN2012100214923 A CN 2012100214923A CN 201210021492 A CN201210021492 A CN 201210021492A CN 102629602 A CN102629602 A CN 102629602A
- Authority
- CN
- China
- Prior art keywords
- wiring
- wirings
- measured
- column
- row
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Automation & Control Theory (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-024568 | 2011-02-08 | ||
| JP2011024568A JP5660313B2 (ja) | 2011-02-08 | 2011-02-08 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102629602A true CN102629602A (zh) | 2012-08-08 |
Family
ID=46587826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012100214923A Pending CN102629602A (zh) | 2011-02-08 | 2012-01-31 | 半导体器件 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20120199829A1 (enExample) |
| JP (1) | JP5660313B2 (enExample) |
| CN (1) | CN102629602A (enExample) |
| TW (1) | TW201234413A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104517938A (zh) * | 2013-10-04 | 2015-04-15 | 爱思开海力士有限公司 | 具有测试单元的半导体器件、电子器件和测试方法 |
| CN105321567A (zh) * | 2014-07-23 | 2016-02-10 | 三星电子株式会社 | 非易失性存储器装置、编程方法及存储装置 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8816715B2 (en) * | 2011-05-12 | 2014-08-26 | Nanya Technology Corp. | MOS test structure, method for forming MOS test structure and method for performing wafer acceptance test |
| US9972571B1 (en) | 2016-12-15 | 2018-05-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Logic cell structure and method |
| US10756114B2 (en) | 2017-12-28 | 2020-08-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor circuit with metal structure and manufacturing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060157700A1 (en) * | 2004-12-15 | 2006-07-20 | Ramona Winter | Semiconductor wafer with test structure |
| CN1976022A (zh) * | 2005-10-03 | 2007-06-06 | Pdf全解公司 | 用于半导体晶片测试的被测装置阵列的布局 |
| US20090243645A1 (en) * | 2008-03-27 | 2009-10-01 | Renesas Technology Corp. | Manufacturing method of a semiconductor device, a semiconductor wafer, and a test method |
| JP2009239027A (ja) * | 2008-03-27 | 2009-10-15 | Sharp Corp | 不具合検出機能を備えた半導体装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3763664B2 (ja) * | 1998-04-08 | 2006-04-05 | 松下電器産業株式会社 | テスト回路 |
| US7030651B2 (en) * | 2003-12-04 | 2006-04-18 | Viciciv Technology | Programmable structured arrays |
| JP4274576B2 (ja) * | 2007-01-12 | 2009-06-10 | エルピーダメモリ株式会社 | 半導体装置 |
| KR101283537B1 (ko) * | 2007-09-28 | 2013-07-15 | 삼성전자주식회사 | 고전압 측정 회로 및 이를 구비하는 비휘발성 메모리 장치 |
| US8343781B2 (en) * | 2010-09-21 | 2013-01-01 | International Business Machines Corporation | Electrical mask inspection |
-
2011
- 2011-02-08 JP JP2011024568A patent/JP5660313B2/ja not_active Expired - Fee Related
-
2012
- 2012-01-09 TW TW101100848A patent/TW201234413A/zh unknown
- 2012-01-25 US US13/358,084 patent/US20120199829A1/en not_active Abandoned
- 2012-01-31 CN CN2012100214923A patent/CN102629602A/zh active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060157700A1 (en) * | 2004-12-15 | 2006-07-20 | Ramona Winter | Semiconductor wafer with test structure |
| CN1976022A (zh) * | 2005-10-03 | 2007-06-06 | Pdf全解公司 | 用于半导体晶片测试的被测装置阵列的布局 |
| US20090243645A1 (en) * | 2008-03-27 | 2009-10-01 | Renesas Technology Corp. | Manufacturing method of a semiconductor device, a semiconductor wafer, and a test method |
| JP2009239027A (ja) * | 2008-03-27 | 2009-10-15 | Sharp Corp | 不具合検出機能を備えた半導体装置 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104517938A (zh) * | 2013-10-04 | 2015-04-15 | 爱思开海力士有限公司 | 具有测试单元的半导体器件、电子器件和测试方法 |
| CN104517938B (zh) * | 2013-10-04 | 2018-06-26 | 爱思开海力士有限公司 | 具有测试单元的半导体器件、电子器件和测试方法 |
| CN105321567A (zh) * | 2014-07-23 | 2016-02-10 | 三星电子株式会社 | 非易失性存储器装置、编程方法及存储装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20120199829A1 (en) | 2012-08-09 |
| JP5660313B2 (ja) | 2015-01-28 |
| TW201234413A (en) | 2012-08-16 |
| JP2012164838A (ja) | 2012-08-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7735375B2 (en) | Stress-distribution detecting semiconductor package group and detection method of stress distribution in semiconductor package using the same | |
| US11769726B2 (en) | Semiconductor device | |
| US9496192B2 (en) | Test pattern of semiconductor device | |
| US10658294B2 (en) | Structure and method for flexible power staple insertion | |
| CN106356371B (zh) | 半导体装置、片上系统、移动装置和半导体系统 | |
| US11652101B2 (en) | Trench capacitor assembly for high capacitance density | |
| CN102891142B (zh) | 具有无方向的去耦合电容器的半导体器件及其制造方法 | |
| US9355205B2 (en) | Method and apparatus of a three dimensional integrated circuit | |
| CN102629602A (zh) | 半导体器件 | |
| US20130173214A1 (en) | Method and structure for inline electrical fin critical dimension measurement | |
| Weerasekera et al. | Two-dimensional and three-dimensional integration of heterogeneous electronic systems under cost, performance, and technological constraints | |
| WO2019132944A1 (en) | Power shared cell architecture | |
| US20090127721A1 (en) | Semiconductor integrated circuit device | |
| US8954916B2 (en) | Test circuit, integrated circuit, and test circuit layout method | |
| JP4970749B2 (ja) | 容易に変更することができる配線構造体の設計方法 | |
| US11682664B2 (en) | Standard cell architecture with power tracks completely inside a cell | |
| JP2007207933A (ja) | 半導体装置 | |
| EP4557362A2 (en) | Multi-die power semiconductor package | |
| NL2030602B1 (en) | Integrated circuit supports with microstrips | |
| US20250112125A1 (en) | Bridges over metal voids in integrated circuit packages | |
| JP2005032768A (ja) | 半導体装置 | |
| US11296036B2 (en) | Mark pattern in semiconductor device | |
| US20250355021A1 (en) | Test element group and using the same | |
| TW201841339A (zh) | 具有接觸窗跳線件的積體電路及半導體裝置 | |
| WO2022178814A1 (en) | Integrated circuit supports with microstrips |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120808 |