CN102610742B - 磁性随机存取存储器及其制造方法 - Google Patents
磁性随机存取存储器及其制造方法 Download PDFInfo
- Publication number
- CN102610742B CN102610742B CN201110274938.9A CN201110274938A CN102610742B CN 102610742 B CN102610742 B CN 102610742B CN 201110274938 A CN201110274938 A CN 201110274938A CN 102610742 B CN102610742 B CN 102610742B
- Authority
- CN
- China
- Prior art keywords
- layer
- insulating film
- magnetization
- gate electrode
- gate insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011011357A JP2012156167A (ja) | 2011-01-21 | 2011-01-21 | 磁気ランダムアクセスメモリ及びその製造方法 |
JP011357/2011 | 2011-01-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102610742A CN102610742A (zh) | 2012-07-25 |
CN102610742B true CN102610742B (zh) | 2015-04-22 |
Family
ID=46527991
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110274938.9A Active CN102610742B (zh) | 2011-01-21 | 2011-09-16 | 磁性随机存取存储器及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8592882B2 (zh) |
JP (1) | JP2012156167A (zh) |
KR (1) | KR20120085135A (zh) |
CN (1) | CN102610742B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101713871B1 (ko) * | 2013-03-14 | 2017-03-09 | 삼성전자주식회사 | 자기 저항 메모리 장치 및 그 제조 방법 |
US10115891B2 (en) * | 2015-04-16 | 2018-10-30 | Toshiba Memory Corporation | Magnetoresistive memory device and manufacturing method of the same |
US11283005B2 (en) * | 2019-09-30 | 2022-03-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Spacer scheme and method for MRAM |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1495793A (zh) * | 2002-09-10 | 2004-05-12 | 株式会社东芝 | 磁随机存取存储器 |
CN1606093A (zh) * | 2003-10-10 | 2005-04-13 | 株式会社日立制作所 | 使用转矩的非易失性磁存储单元和使用它的随机存取磁存储器 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6881351B2 (en) * | 2003-04-22 | 2005-04-19 | Freescale Semiconductor, Inc. | Methods for contacting conducting layers overlying magnetoelectronic elements of MRAM devices |
US7345911B2 (en) * | 2006-02-14 | 2008-03-18 | Magic Technologies, Inc. | Multi-state thermally assisted storage |
US20080246082A1 (en) * | 2007-04-04 | 2008-10-09 | Force-Mos Technology Corporation | Trenched mosfets with embedded schottky in the same cell |
JP2009049101A (ja) | 2007-08-16 | 2009-03-05 | Sony Corp | 磁気メモリ素子及び磁気メモリ装置 |
JP2009239121A (ja) | 2008-03-27 | 2009-10-15 | Toshiba Corp | 磁気抵抗効果素子及び磁気ランダムアクセスメモリ |
WO2010134378A1 (ja) | 2009-05-19 | 2010-11-25 | 富士電機ホールディングス株式会社 | 磁気メモリ素子およびそれを用いる記憶装置 |
-
2011
- 2011-01-21 JP JP2011011357A patent/JP2012156167A/ja active Pending
- 2011-09-15 KR KR1020110092999A patent/KR20120085135A/ko not_active Application Discontinuation
- 2011-09-16 CN CN201110274938.9A patent/CN102610742B/zh active Active
- 2011-09-16 US US13/235,223 patent/US8592882B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1495793A (zh) * | 2002-09-10 | 2004-05-12 | 株式会社东芝 | 磁随机存取存储器 |
CN1606093A (zh) * | 2003-10-10 | 2005-04-13 | 株式会社日立制作所 | 使用转矩的非易失性磁存储单元和使用它的随机存取磁存储器 |
Also Published As
Publication number | Publication date |
---|---|
US20120187456A1 (en) | 2012-07-26 |
KR20120085135A (ko) | 2012-07-31 |
US8592882B2 (en) | 2013-11-26 |
CN102610742A (zh) | 2012-07-25 |
JP2012156167A (ja) | 2012-08-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170801 Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Toshiba Corp. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Japanese businessman Panjaya Co.,Ltd. Address after: Tokyo, Japan Patentee after: Kaixia Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20211014 Address after: Tokyo, Japan Patentee after: Japanese businessman Panjaya Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. |