CN102610659A - 电压控制变容器及其制备方法 - Google Patents
电压控制变容器及其制备方法 Download PDFInfo
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- CN102610659A CN102610659A CN201110021966XA CN201110021966A CN102610659A CN 102610659 A CN102610659 A CN 102610659A CN 201110021966X A CN201110021966X A CN 201110021966XA CN 201110021966 A CN201110021966 A CN 201110021966A CN 102610659 A CN102610659 A CN 102610659A
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CN201110021966.XA CN102610659B (zh) | 2011-01-19 | 2011-01-19 | 电压控制变容器及其制备方法 |
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CN201110021966.XA CN102610659B (zh) | 2011-01-19 | 2011-01-19 | 电压控制变容器及其制备方法 |
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CN102610659A true CN102610659A (zh) | 2012-07-25 |
CN102610659B CN102610659B (zh) | 2014-08-13 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111033780A (zh) * | 2018-08-09 | 2020-04-17 | 深圳市为通博科技有限责任公司 | 电容器及其制作方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001102599A (ja) * | 1999-09-29 | 2001-04-13 | Sanyo Electric Co Ltd | 可変容量半導体装置 |
CN1707809A (zh) * | 2004-06-08 | 2005-12-14 | Nec化合物半导体器件株式会社 | 半导体器件 |
US20080157159A1 (en) * | 2006-12-28 | 2008-07-03 | International Business Machines Corporation | Highly tunable metal-on-semiconductor varactor |
US20080164507A1 (en) * | 2006-01-18 | 2008-07-10 | International Business Machines Corporation | Area-Efficient Gated Diode Structure and Method of Forming Same |
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2011
- 2011-01-19 CN CN201110021966.XA patent/CN102610659B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001102599A (ja) * | 1999-09-29 | 2001-04-13 | Sanyo Electric Co Ltd | 可変容量半導体装置 |
CN1707809A (zh) * | 2004-06-08 | 2005-12-14 | Nec化合物半导体器件株式会社 | 半导体器件 |
US20080164507A1 (en) * | 2006-01-18 | 2008-07-10 | International Business Machines Corporation | Area-Efficient Gated Diode Structure and Method of Forming Same |
US20080157159A1 (en) * | 2006-12-28 | 2008-07-03 | International Business Machines Corporation | Highly tunable metal-on-semiconductor varactor |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111033780A (zh) * | 2018-08-09 | 2020-04-17 | 深圳市为通博科技有限责任公司 | 电容器及其制作方法 |
US11063113B2 (en) | 2018-08-09 | 2021-07-13 | Shenzhen Weitongbo Technology Co., Ltd. | Capacitor and method for fabricating the same |
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Publication number | Publication date |
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CN102610659B (zh) | 2014-08-13 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140107 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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TA01 | Transfer of patent application right |
Effective date of registration: 20140107 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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