CN102598291A - 太阳能电池单元的制造方法 - Google Patents

太阳能电池单元的制造方法 Download PDF

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Publication number
CN102598291A
CN102598291A CN2010800475284A CN201080047528A CN102598291A CN 102598291 A CN102598291 A CN 102598291A CN 2010800475284 A CN2010800475284 A CN 2010800475284A CN 201080047528 A CN201080047528 A CN 201080047528A CN 102598291 A CN102598291 A CN 102598291A
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CN
China
Prior art keywords
silane
type layer
electrode
butyl
battery cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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CN2010800475284A
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English (en)
Chinese (zh)
Inventor
冈庭香
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
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Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of CN102598291A publication Critical patent/CN102598291A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
CN2010800475284A 2009-10-28 2010-10-21 太阳能电池单元的制造方法 Pending CN102598291A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009247813 2009-10-28
JP2009-247813 2009-10-28
PCT/JP2010/068563 WO2011052465A1 (fr) 2009-10-28 2010-10-21 Procédé de fabrication d'une pile solaire

Publications (1)

Publication Number Publication Date
CN102598291A true CN102598291A (zh) 2012-07-18

Family

ID=43921888

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800475284A Pending CN102598291A (zh) 2009-10-28 2010-10-21 太阳能电池单元的制造方法

Country Status (7)

Country Link
US (1) US20120231575A1 (fr)
EP (1) EP2495770A1 (fr)
JP (1) JPWO2011052465A1 (fr)
KR (1) KR20120068945A (fr)
CN (1) CN102598291A (fr)
TW (1) TW201125154A (fr)
WO (1) WO2011052465A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104392899A (zh) * 2014-10-08 2015-03-04 程德明 整流单晶硅片免喷砂扩散镀镍工艺
CN108311112A (zh) * 2018-03-16 2018-07-24 嘉兴学院 基于低温等离子体技术的表面巯基化碳纤维制备方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5886591B2 (ja) * 2011-08-09 2016-03-16 株式会社ダイセル 印刷用溶剤及びペースト組成物
US8945978B2 (en) * 2013-06-28 2015-02-03 Sunpower Corporation Formation of metal structures in solar cells

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5270248A (en) * 1992-08-07 1993-12-14 Mobil Solar Energy Corporation Method for forming diffusion junctions in solar cell substrates
US20080000519A1 (en) * 2004-07-29 2008-01-03 Kyocera Corporation Solar Cell Device and Method for Manufacturing the Same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59136926A (ja) 1983-01-25 1984-08-06 Seiko Epson Corp 半導体装置の製法
JPH0543489Y2 (fr) * 1987-07-28 1993-11-02
JP3267452B2 (ja) * 1993-08-31 2002-03-18 キヤノン株式会社 光電変換装置及び太陽電池モジュール
JPH09293889A (ja) * 1996-04-25 1997-11-11 Kyocera Corp 太陽電池素子
JP3722326B2 (ja) * 1996-12-20 2005-11-30 三菱電機株式会社 太陽電池の製造方法
JP3749079B2 (ja) * 2000-04-10 2006-02-22 シャープ株式会社 太陽電池セル及びその製造方法
JP2006041105A (ja) * 2004-07-26 2006-02-09 Sharp Corp 太陽電池およびその製造方法
JP2006135017A (ja) * 2004-11-04 2006-05-25 Sharp Corp 光電変換装置およびその製造方法
US20100224241A1 (en) * 2005-06-22 2010-09-09 Kyocera Corporation Solar Cell and Solar Cell Manufacturing Method
US20070163634A1 (en) * 2005-07-14 2007-07-19 Kyocera Corporation Solar cell, manufacturing method and manufacturing management system thereof, and solar cell module
JP5047186B2 (ja) * 2006-09-27 2012-10-10 京セラ株式会社 太陽電池素子とその製造方法
JP4842191B2 (ja) 2007-03-29 2011-12-21 シャープ株式会社 太陽電池セルの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5270248A (en) * 1992-08-07 1993-12-14 Mobil Solar Energy Corporation Method for forming diffusion junctions in solar cell substrates
US20080000519A1 (en) * 2004-07-29 2008-01-03 Kyocera Corporation Solar Cell Device and Method for Manufacturing the Same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104392899A (zh) * 2014-10-08 2015-03-04 程德明 整流单晶硅片免喷砂扩散镀镍工艺
CN108311112A (zh) * 2018-03-16 2018-07-24 嘉兴学院 基于低温等离子体技术的表面巯基化碳纤维制备方法
CN108311112B (zh) * 2018-03-16 2021-01-01 嘉兴学院 基于低温等离子体技术的表面巯基化碳纤维制备方法

Also Published As

Publication number Publication date
WO2011052465A1 (fr) 2011-05-05
US20120231575A1 (en) 2012-09-13
TW201125154A (en) 2011-07-16
EP2495770A1 (fr) 2012-09-05
JPWO2011052465A1 (ja) 2013-03-21
KR20120068945A (ko) 2012-06-27

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Application publication date: 20120718