CN102592978A - 光致抗蚀剂及其使用方法 - Google Patents
光致抗蚀剂及其使用方法 Download PDFInfo
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- CN102592978A CN102592978A CN2011104631606A CN201110463160A CN102592978A CN 102592978 A CN102592978 A CN 102592978A CN 2011104631606 A CN2011104631606 A CN 2011104631606A CN 201110463160 A CN201110463160 A CN 201110463160A CN 102592978 A CN102592978 A CN 102592978A
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Abstract
光致抗蚀剂及其使用方法。提供了一种新型的光致抗蚀剂,其包含多酮组分,且特别适用于离子注入光刻应用。本发明优选的光致抗蚀剂对位于其下的无机表面例如SiON、氧化硅、氮化硅、硅酸铪、硅酸锆和其它无机表面,能显示出优良的粘性。提供了一种提供离子注入的半导体基材的方法,所述方法包含:提供其上涂敷有化学增幅型的正性光致抗蚀剂组合物浮雕图像的半导体基材,其中光致抗蚀剂包含1)树脂、2)光敏组分和3)多酮组分;和施加离子到基材上。
Description
技术领域
本发明涉及包含多酮(multi-keto)组分的新型光致抗蚀剂,且特别适用于离子注入(implant lithography)光刻应用。本发明的光致抗蚀剂对于其下的无机表面例如SiON、氧化硅、氮化硅和其它无机表面能显示出优良的粘合性能。
背景技术
光致抗蚀剂是用来将图像转印到基材上的光敏膜。在基材上形成光致抗蚀剂涂层,接着通过光掩模使光致抗蚀剂层曝光于活化辐射源。
离子注入技术已应用于掺杂半导体晶片。通过这种方法,离子束注入机在真空(低压)容器中产生离子束,离子被引导并“注入”晶片内。
然而现有的离子注入方法出现了重大问题。此外,在注入光刻方案(protocols)中,光致抗蚀剂常常不是沉积在有机底层,而是沉积在无机层例如氮氧化硅(SiON)、SiO(氧化硅)层和其它无机层上,例如Si3N4涂层,其已在半导体设备制造中使用,例如作为蚀刻停止层和无机抗反射层。参见例如美国专利号6124217,6153504和6245682。
期望能在SiON和其它无机基底层上提供具有优良的分辨率和粘合的新型光致抗蚀剂。
发明内容
现在我们提供一种新型光致抗蚀剂,优选包含1)多酮组分、2)包括光酸不稳定基团的树脂和3)一种或多种光酸(photoacid)发生剂化合物。本发明优选的光致抗蚀剂用于短波成像,包括小于300nm和小于200nm的波长,例如248nm、193nm和EUV。
具体实施方式
如本文指出的,术语“多酮组分”、“多酮材料”、“多酮单体”或“多酮树脂”或其他类似术语指的是一种组分、材料、单体或树脂,其中两个相邻的酮基(即>C=O)部分被不超过30个插入的原子(例如插入的碳和/或杂原子例如O、N和/或S)隔开,更典型的是两个相邻的酮基部分被不超过25、20、15、10、9、8、7、6、5、4、3、2或1个插入的原子隔开。在一个优选的方案中,两个相邻的酮基(即>C=O)部分被15、14、13、12、11、10、9、8、7、6、5、4、3、2或1个插入的原子(例如插入的碳和/或杂原子例如O、N和/或S)隔开,更优选的,两个相邻的酮基(即>C=O)部分被10、9、8、7、6、5、4、3或2个插入的原子(例如插入的碳和/或杂原子例如O、N和/或S)隔开。两个相邻的酮基部分可以是独立的酮、羧基(-COOH)、酯等部分。
没有任何理论约束,确信相邻的酮基可以与表面上的部分螯合或作用,在所述表面上涂覆了包含多酮组分的光致抗蚀剂,从而可增强光致抗蚀剂与下面的表面的粘合。比如,相邻的酮基可以与基材表面上的硅烷醇基作用。
本发明的光致抗蚀剂的多酮组分可以是各种形式。在一个方案中,优选包括丙烯酸酯或甲基丙烯酸酯重复单元的树脂。例如,包含多酮基的丙烯酸酯或甲基丙烯酸酯单体可以聚合形成均聚物,或与一种或多种其它不同单体形成更高级的聚合物,用作本发明光致抗蚀剂的多酮组分。
本发明优选的光致抗蚀剂可以在短波成像,包括小于300nm和小于200nm例如248nm、193nm和EUV。
本发明特别优选的光致抗蚀剂包含如本文公开的多酮组分、成像有效量的一种或多种光酸发生剂化合物(PAG)和选自如下组的树脂:
1)包含酸不稳定基团的酚树脂,其能够提供特别适合在248nm成像的化学增幅的正性光致抗蚀剂。特别优选的这类树脂包括:i)包含乙烯基苯酚和丙烯酸烷基酯聚合单元的聚合物,其中聚合的丙烯酸烷基酯单元在光酸的存在下会发生脱保护反应。示例性的、能发生光酸引发的脱保护反应的丙烯酸烷基酯包括例如丙烯酸叔丁酯、甲基丙烯酸叔丁酯、丙烯酸甲基金刚烷酯、甲基丙烯酸甲基金刚烷酯和其他能够发生光酸引发的反应的丙烯酸非环烷基酯和丙烯酸环烷基酯,例如美国专利6042997和5492793中的聚合物,这些专利引入本文作为参考;ii)包含以下聚合单元的聚合物:乙烯基苯酚,任选取代的不含羟基或羧基环取代基的乙烯基苯基(例如苯乙烯),和如以上聚合物i)所述的那些脱保护基团的丙烯酸烷基酯,例如引入本文作为参考的美国专利6042997中描述的聚合物;和iii)包含包括能够与光酸反应的缩醛部分或缩酮部分的重复单元和任选芳族重复单元例如苯基或苯酚基的聚合物;
2)基本不含或完全不含苯基或其他芳基的树脂,其能够提供特别适用于在小于200nm的波长、例如193nm成像的化学增幅的正性光致抗蚀剂。特别优选的这类树脂包括:i)含有非芳族环烯(环内双键)的聚合单元例如任选取代的降冰片烯的聚合物,例如引入本文作参考的美国专利5843624中描述的聚合物;ii)包含丙烯酸烷基酯单元的聚合物,所述单元是例如丙烯酸叔丁酯、甲基丙烯酸叔丁酯、丙烯酸甲基金刚烷酯、甲基丙烯酸甲基金刚烷酯和其它的丙烯酸非环烷基酯和丙烯酸脂环基酯;已在美国专利6057083中描述的这类聚合物。
本发明的光致抗蚀剂还可以包含不同种类的PAG混合物,典型地为两种或三种不同的PAG混合物,更典型地是由两种不同的PAG组成的混合物。
本发明还提供形成本发明光致抗蚀剂的浮雕图像(reliefimage)的方法,包括形成小于四分之一微米尺寸或更小,比如小于0.2或小于0.1微米尺寸的高分辨率的图案化光致抗蚀剂成像(即图案线具有基本上垂直的侧边)的方法。
本发明进一步包括制造的产品,其包含基材,例如其上涂覆有本发明的光致抗蚀剂和浮雕图像的微电子晶片。本发明还包括制造微电子晶片和其它产品的方法。本发明的光致抗蚀剂可以涂覆在各种表面上,包括例如SiON、氧化硅、氮化硅、硅酸铪、硅酸锆和其它无机表面。
此外,正如所讨论的,在一个优选方案中,本发明提供改进的离子注入方法。这种方法可以包括将掺杂离子(例如第III和/或V族离子例如硼、砷、磷等)注入基材(例如半导体晶片)的表面,其上具有所公开的用作掩膜的有机光致抗蚀剂。将上述光致抗蚀剂遮掩的基材放入可提供低压和来自离子化源的离子等离子体的反应容器中。这些离子包括所述当注入基材时具有电活性的掺杂剂。电压可施加在反应容器(例如通过导电性的容器壁)中来选择性地注入掺杂离子。
本发明的其它方面在下文中公开。
如上文讨论的,我们现在提供新型的光致抗蚀剂,其适当地包括1)适当地包括光酸不稳定基团的树脂组分,2)一种或多种光酸发生剂化合物和3)多酮组分,例如包含上述相邻酮基的树脂。优选这些组分1)、2)和3)是不同的,即不会共价连接并且每个均为不同的材料。本发明优选的光致抗蚀剂为正性抗蚀剂,尤其是化学增幅的抗蚀剂。本发明也包括负性光致抗蚀剂,其中所述抗蚀剂可包含本文公开的树脂、交联官能团和酚类组分。
在一些优选的实施方案中,多酮组分在光致抗蚀剂组合物中将是稳定的,不会干扰抗蚀剂的光刻过程。也就是说,多酮组分(即多酮树脂)优选不会促进抗蚀剂的过早降解(即缩短保存期限)或者需要改变光刻工艺条件。
上述多酮组分典型地将是除了其它抗蚀剂组分例如光酸不稳定的或脱饱和的树脂、光酸发生剂、碱性添加剂、表面活性剂/流平剂、增塑剂和/或溶剂之外的另外的、不同的抗蚀剂组分。
在一些方案中,在抗蚀剂中使用的多酮组分添加剂将不包含光酸不稳定部分,例如由于光致抗蚀剂的曝光步骤而进行脱保护反应的光酸不稳定的酯或缩醛基团。
在其他方案中,在抗蚀剂中使用的优选多酮组分添加剂将包含光酸不稳定部分,例如由于光致抗蚀剂的曝光步骤而进行脱保护反应的光酸不稳定的酯或缩醛基团。
多酮组分可以为抗蚀剂组合物提供其它的功能,例如提供或增强固体组分的溶解性。然而,不像其它易挥发的溶剂,多酮组分在任意预曝光热处理之后将以有效量保留在光致抗蚀剂层中,例如在任意预曝光热处理之后,配制在液体抗蚀剂组合物中的多酮组分数量的优选至少约10、20、30、40或50摩尔百分比的部分将会保留在光致抗蚀剂组合物中。典型地,只有少量的多酮组分需要在任意热处理之后保留或存在于抗蚀剂涂层中以得到有效结果,例如挥发性溶剂移除之后,上述多酮组分可以适当的以抗蚀剂层全部材料的约0.05或0.1重量%至约5重量%存在。
在一些方案中,多酮组分优选可以通过聚合一种或多种单体来提供,所述单体包含一种或多种多酮官能团,例如下列分子式(I)的乙烯单体:
其中R是氢或任选取代的烷基,尤其是任选取代的C1-6烷基例如甲基或氟代甲基;并且X是氢或非氢的取代基例如将提供光酸不稳定基的部分(其可以是季碳,例如叔丁基,与depoicted氧相连的全取代脂环碳等),内酯,极性基团例如羟烷基如任选取代的羟基(C1-30烷基)(其中烷基可以是环状或非环状的);或者非极性基团例如烷基如C1-30烷基(其中烷基可以是环状或非环状的)。
特别优选的单体包含一种或多种的多酮官能团,并可以被聚合成包括下述的多酮组分:
1)
2)
3)
4)
如上述式I所列举和上述优选的单体,在优选的方案中,本发明的光致抗蚀剂的多酮组分包含至少两个相邻但不是环原子的酮基。也就是说,所述两个酮基(不管它们是酮基、羧基、酯羰基)将不是环原子,例如内酯,尽管多酮组分优选除了所述两个或更多非环酮基之外,还可以进一步包含如上述单体1)和4)列举的内酯。
适合本发明的光致抗蚀剂可以含有宽范围的多酮组分的量。例如光致抗蚀剂可以包含从约0.1或0.5重量百分比至5、10、15、20、25、30、35、40、45或50或更多重量百分比的一种或多种的多酮组分,基于流体光致抗蚀剂组合物的总重量。
如本文所述,抗蚀剂组分的各种取代基可以是任选取代的。取代部分适合在一种或多种合适的位置取代,通过例如卤素如F、Cl、Br和/或I,硝基,氰基,磺基(sulfono),烷基(包括C1-16烷基,优选C1-8烷基),卤代烷基例如氟烷基(如三氟甲基)和全卤代烷基例如全氟C1-4烷基,烷氧基(包括具有一个或多个氧键的C1-16烷氧基、优选C1-8烷氧基),烯基(包括C2-12烯基、优选C2-8烯基),炔基(包括C2-12炔基、优选C2-8炔基),芳基例如苯基或萘基和取代的芳基例如卤、烷氧基、烯基、炔基和/或烷基取代的芳基,优选具有上述相应基团的碳原子数。优选的取代芳基包括取代苯基、蒽基和萘基。
本发明的光致抗蚀剂典型地包含树脂粘合剂和光活性组分以及多酮组分。例如,优选的树脂粘合剂包含极性基团例如羟基或羧基。优选在抗蚀剂组合物中的树脂粘合剂以足够量使用以使光致抗蚀剂在水碱性溶液中显影。
在许多实施方式中,优选是化学增幅的正性抗蚀剂。许多这类抗蚀剂组合物已描述在例如美国专利4968581、4883740、4810613和4491628以及加拿大专利申请2001384中。
在本发明中使用的光致抗蚀剂还可以包含光活性组分尤其是一种或多种光酸发生剂(即“PAG”),其适合以足够量使用,在曝光于活化辐射之下时,在抗蚀剂的涂层中产生潜影。在193nm和248nm成像的PAGs优选包括酰亚胺基磺酸酯例如以下分子式的化合物:
其中R为樟脑基、金刚烷基、烷基(例如C1-12烷基)和氟代烷基例如氟(C1-18烷基),例如RCF2-,其中R为任选取代的金刚烷基。
本发明的抗蚀剂还可以采用其它已知的PAG。特别是在193nm成像时,为了提供更高的透明性,通常优选不包含芳族基的PAG,比如上述的酰亚胺基磺酸酯。
用于本发明的光致抗蚀剂的其它合适的光酸发生剂包括例如盐,如,三苯基锍三氟甲烷磺酸盐,(对叔丁氧基苯基)二苯基锍三氟甲烷磺酸盐,三(对叔丁氧基苯基)锍三氟甲烷磺酸盐,三苯基锍对甲苯磺酸盐;硝基苄基衍生物,例如2-硝基苄基对甲苯磺酸酯,2,6-二硝基苄基对甲苯磺酸酯,和2,4-二硝基苄基对甲苯磺酸酯;磺酸酯,例如1,2,3-三(甲基磺酰氧基(sulfonyloxy))苯,1,2,3-三(三氟甲基磺酰氧基)苯,和1,2,3-三(对甲苯磺酰氧基)苯;重氮甲烷衍生物,例如,二(苯磺酰基)重氮甲烷,二(对甲苯磺酰基)重氮甲烷;乙二肟衍生物,例如双-O-(对甲苯磺酰基)-α-二甲基乙二肟,和双-O-(正丁基磺酰基)-α-二甲基乙二肟;N-羟基酰亚胺基化合物的磺酸酯衍生物,例如,N-羟基琥珀酰亚胺甲磺酸酯,N-羟基琥珀酰亚胺三氟甲磺酸酯;和含卤素的三嗪化合物,例如,2-(4-甲氧基苯基)-4,6-双(三氯甲基)-1,3,5-三嗪,和2-(4-甲氧基萘基)-4,6-双(三氯甲基)-1,3,5-三嗪。可使用一种或多种这样的PAG。
用于本发明光致抗蚀剂的优选任选添加剂为添加碱,特别是氢氧化四甲基铵(TBAH),或乳酸四甲基铵,其能提高显影后的抗蚀剂浮雕图像的分辨率。对于在193nm成像的抗蚀剂,优选的添加碱为氢氧化四甲基铵以及各种其它的胺例如三异丙醇、二氮杂双环(diazacyclo)十一烯或二氮杂双环壬烯的乳酸盐。添加碱适合以相对较少的数量使用,例如相对于全部固体的约0.03-5重量%。
用于本发明的光致抗蚀剂还可以包含其它任选的材料。例如,其它任选的添加剂包括防条纹剂、增速剂、加速剂等。这种任选添加剂典型地会以较小的浓度存在于光致抗蚀剂组合物中,除了填充剂和染料可以相对大的浓度,例如占光致抗蚀剂干燥成分总重量的5-30重量%存在。
依据本发明使用的光致抗蚀剂通常由下述已知的工序制备。例如,本发明的光致抗蚀剂可以通过将光致抗蚀剂的组分溶解在合适的溶剂中作为涂料组合物来制备,所述溶剂为例如二醇醚例如2-甲氧基乙基醚(二甘醇二甲醚)、乙二醇单甲醚、丙二醇单甲醚;丙二醇单甲醚醋酸酯;乳酸酯例如乳酸乙酯或乳酸甲酯,优选为乳酸乙酯;丙酸酯,尤其是丙酸甲酯、丙酸乙酯和丙酸乙基乙氧基酯;纤溶剂(Cellosolve)酯例如甲基纤溶剂乙酸酯;芳香烃如甲苯或二甲苯;或酮例如甲基乙基酮、环己酮和2-庚酮。典型的,光致抗蚀剂的固体含量在光致抗蚀剂组合物总重量的5-35重量%之间变化。这些溶剂的混合物也适用。
液体光致抗蚀剂组合物可通过例如旋涂、浸渍、辊涂或其它常规涂覆工艺施加于基材上。当旋涂时,涂覆溶液的固体含量可根据采用的特定的旋涂设备、溶液粘度、旋涂机速度以及允许旋涂的时间来调节,以提供所需的涂膜厚度。
将依据本发明使用的光致抗蚀剂组合物适当的施加于涉及涂覆光致抗蚀剂的工艺所惯用的基材上。例如,所述组合物可施加在用于生产微处理器和其它集成电路元件的硅晶片或用二氧化硅涂布的硅晶片上。铝-铝氧化物、砷化镓、陶瓷、石英、铜、玻璃基材等同样是适用的。光致抗蚀剂还可以适当的施加在抗反射层上,特别是有机抗反射层。
光致抗蚀剂涂覆在表面上后,可加热干燥以去除溶剂直至优选光致抗蚀剂涂层无粘性(tack free)。
接着将光致抗蚀剂层曝光于成像辐射。可采用浸没平版印刷工艺。本文提到的“浸没曝光”或其它类似的术语表示曝光是在曝光工具和涂覆的光致抗蚀剂组合物层之间插入的这种流体层(例如水或具有添加剂的水)中进行。
对于任何应用,干燥曝光是适合的,例如成像工具和光致抗蚀剂涂层表面之间的空气或其它非液体介质中进行。
根据曝光工具和光致抗蚀剂组合物的组分,光致抗蚀剂组合物层被适当的图案化曝光于活化辐射,该活化辐射的曝光能量典型地在约1-100mJ/cm2范围内。本文提及的将光致抗蚀剂组合物曝光于能活化光致抗蚀剂的辐射,是指辐射能在光致抗蚀剂中形成潜影,例如通过引发光敏组分的反应(如由光酸发生剂化合物产生光酸)。
如上面讨论的,光致抗蚀剂组合物优选通过短的曝光波长光活化,特别是小于400nm、小于300nm和小于200nm的曝光波长,特别优选的曝光波长为I-线(365nm)、248nm和193nm以及EUV。
曝光后,组合物薄膜层优选在约70℃至约160℃的温度范围内烘烤。此后,使薄膜显影,优选通过例如氢氧化季铵溶液例如氢氧化四烷基铵溶液的水基显影剂处理;各种胺溶液优选0.26N氢氧化四甲基铵,例如乙胺、正丙胺、二乙胺、二正丙胺、三乙胺或甲基二乙胺;醇胺例如二乙醇胺或三乙醇胺;环胺例如吡咯、吡啶等。
本发明的光致抗蚀剂和方法可以大范围使用,包括例如用于制造薄膜磁头(例如3-5μm)、磁盘、CD掩膜和后端注入物。
本发明的光致抗蚀剂还可用于在半导体晶片上形成金属凸块(bump)。该工艺包括:a)在半导体晶片上放置本发明的光致抗蚀剂,优选提供厚膜涂层例如厚度为50μm或更厚的干燥光致抗蚀剂涂层;c)将光敏组合物层成像曝光于光化辐射,包括小于300nm或小于200nm的辐射,特别是248nm和193nm;d)使曝光的光敏组合物层显影以提供图案化的区域;e)将金属沉积至图案化的区域;和f)去除曝光的光敏组合物以提供具有金属凸块的半导体晶片。
在这种凸块的形成方法中,光致抗蚀剂成像以形成开孔例如在光敏层上的通孔。在这种方法中,将光敏层置于电子器件的导电层上。光敏组合物的曝光以及接下来的显影在光敏组合物里提供了规定的孔(通孔),并露出下面的导电层。于是,该方法的下一步骤是沉积金属块或金属合金块于规定孔(通孔)中。这种金属的沉积可以通过化学镀或电解沉积方法。电解金属沉积是优选的。在电解金属沉积方法中,电子器件基材,即半导体基材起阴极作用。
在金属或金属合金例如适合作为焊料的金属或金属合金沉积之前,导电层例如铜或镍可以通过溅镀、化学镀沉积等方法沉积,从而形成凸块下金属(under-bump-metal)。这种凸块下金属层通常厚1000至并用作接下来的镀敷焊块的可湿性基底(wettable foundation)。
多种金属可以进行化学镀沉积,包括但不限于铜、锡-铅、镍、金、银、钯等。可电解沉积的合适金属和金属合金包括但不限于铜、锡、锡-铅、镍、金、银、锡-锑、锡-铜、锡-铋、锡-铟、锡-银、钯等。这种金属的电镀浴为本领域技术人员所公知并且容易从各种来源中获得,例如罗门哈斯公司(Rohm andHaas)。
在一个实施方案中,沉积在半导体晶片上的金属可用作焊块。相应地,优选金属凸块为可焊的金属和金属合金,如锡、锡-铅、锡-铜、锡-银、锡-铋、锡-铜-铋、锡-铜-银等。适合形成焊块的金属和金属合金公开于美国专利号5186383,5902472,5990564,6099713和6013572,以及欧洲专利申请号EP1148548(Cheung等),所有上述资料引入本文作参考。示例的金属和金属合金包括但不限于:锡;具有少于2wt%铜、优选约0.7wt%铜的锡-铜合金;具有少于20wt%银、优选约3.5-10wt%银的锡-银合金;具有5-25wt%铋、优选约20wt%铋的锡-铋合金;和锡-银-铜合金,其具有少于5wt%银、优选约3.5wt%的银,少于2wt%铜、优选约0.7wt%铜,其余为锡。在一个实施方案中,用于焊块的金属合金不含铅,例如,其包含≤10ppm的铅。
通常,合适的电解金属电镀浴是酸性的并含有酸、水、将被沉积的可溶形式的金属或多种金属、任选的一种或多种有机添加剂,例如增亮剂(加速剂)、载体(抑制剂)、流平剂、延展性提高剂、润湿剂、镀浴稳定剂(特别是用于含锡镀浴)、晶粒细化剂等。每一种任选组分的存在与否、类型以及用量都根据使用的特定的金属镀浴的不同而变化。上述金属镀浴通常可商购获得。
在这种方法中,抗蚀剂组合物对于不会被镀敷的区域起到了保护层的作用。金属沉积之后,残留的抗蚀剂组合物例如可以用商购获得的N-甲基吡咯烷酮(“NMP”)基剥离剂在温度约40℃至69℃下剥离。合适的剥离剂可通过各种商业来源获得。
本文提及的所有文献引入本文作为参考。下述非限制性实施例阐述本发明。
实施例1:光致抗蚀剂的制备
树脂1
多酮树脂
光致抗蚀剂通过混合下述组分(以下的1至5)制备,它们的量表示为占光致抗蚀剂总重量的重量百分比。
1.树脂。所述光致抗蚀剂的树脂(在上述的结构式直接指定为树脂1)如上显示,其中三元共聚物每一个重复单元下的数字表示三元共聚物的所述单元(在树脂合成时装载的单体)的重量百分比。这种树脂以流体光致抗蚀剂总重量的12重量%的量存在。
2.光酸发生剂化合物(PAG)。所述PAG是叔丁基苯基四亚甲基锍全氟丁烷磺酸盐,其占流体光致抗蚀剂总重量的2.5重量%。
3.碱性添加剂。所述碱性添加剂是N-烷基己内酰胺,其量为基于流体光致抗蚀剂组合物总重量的0.017重量%。
4.多酮组分。光致抗蚀剂的多酮组分如上显示,其中三元共聚物中每一个重复单元下的数字表示三元共聚物的所述单元(在树脂合成时装载的单体)的重量百分比。这种多酮树脂以流体光致抗蚀剂总重量的8重量%的量存在。
5.溶剂。所述溶剂是提供抗蚀剂的余量的乳酸乙酯。
实施例2:光刻处理
将实施例1中配制好的抗蚀剂组合物旋涂在SiON晶片表面上,并通过真空电炉在90℃软烤60秒。使抗蚀剂涂层透过光掩模在193nm下曝光,然后将曝光后的涂层在110℃下进行后曝光烘烤。接着将被涂覆的晶片用0.26N的氢氧化四丁基铵水溶液处理,从而使图案化的光致抗蚀剂层显影。
在光致抗蚀剂浮雕图像形成后,将基材(具有光致抗蚀剂掩膜)曝露于高能量(>20ev,减压环境)的磷-离子注入工艺。
Claims (13)
1.一种提供离子注入的半导体基材的方法,所述方法包含:
提供其上涂敷有化学增幅型的正性光致抗蚀剂组合物浮雕图像的半导体基材,
其中光致抗蚀剂包含1)树脂、2)光敏组分和3)多酮组分;和
施加离子到基材上。
2.权利要求1的方法,其中多酮组分是树脂。
3.权利要求1或2的方法,其中树脂1)包含光酸不稳定基团。
4.权利要求1至3任一的方法,其中多酮组分包含至少两个相邻但不是环原子的酮基。
5.一种涂覆的基材,所述涂覆的基材包括:
在其上涂敷有化学增幅的正性光致抗蚀剂组合物浮雕图像的半导体晶片,所述光致抗蚀剂组合物包含1)树脂、2)光敏组分和3)多酮组分;和
所述晶片具有施加的掺杂离子。
6.权利要求5的基材,其中多酮组分包含至少两个相邻但不是环原子的酮基。
7.一种形成光致抗蚀剂浮雕图像的方法,所述方法包括:
(a)在基材上施加包含1)树脂、2)光敏组分和3)多酮组分的光致抗蚀剂;和
(b)将光致抗蚀剂涂层曝光于图案化的活化辐射。
8.权利要求7的方法,其中所述辐射具有193nm的波长。
9.权利要求7或8的方法,其中将光致抗蚀剂组合物施加在无机表面上。
10.权利要求7至9任一的方法,其中多酮组分包含至少两个相邻但环原子的酮基。
11.一种光致抗蚀剂组合物,所述组合物包含:
1)树脂、2)光敏组分和3)多酮组分。
12.权利要求8的光致抗蚀剂组合物,其中多酮组分是树脂。
13.权利要求8或9的光致抗蚀剂组合物,其中树脂1)包含光酸不稳定基团。
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KR101897483B1 (ko) | 2018-09-12 |
US9508553B2 (en) | 2016-11-29 |
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