FR2841004B1 - Procede lithographique utilisant une resine a amplification chimique et comprenant des etapes de limitation d'un fluage de la resine - Google Patents
Procede lithographique utilisant une resine a amplification chimique et comprenant des etapes de limitation d'un fluage de la resineInfo
- Publication number
- FR2841004B1 FR2841004B1 FR0207516A FR0207516A FR2841004B1 FR 2841004 B1 FR2841004 B1 FR 2841004B1 FR 0207516 A FR0207516 A FR 0207516A FR 0207516 A FR0207516 A FR 0207516A FR 2841004 B1 FR2841004 B1 FR 2841004B1
- Authority
- FR
- France
- Prior art keywords
- resin
- steps
- lithographic process
- limiting
- chemical amplification
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003321 amplification Effects 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000003199 nucleic acid amplification method Methods 0.000 title 1
- 239000011347 resin Substances 0.000 title 1
- 229920005989 resin Polymers 0.000 title 1
- 239000000126 substance Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/2024—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure of the already developed image
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
- G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0207516A FR2841004B1 (fr) | 2002-06-18 | 2002-06-18 | Procede lithographique utilisant une resine a amplification chimique et comprenant des etapes de limitation d'un fluage de la resine |
US10/459,118 US20040007382A1 (en) | 2002-06-18 | 2003-06-10 | Lithographic process using a chemical amplification resist and steps for limiting creep of the resist |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0207516A FR2841004B1 (fr) | 2002-06-18 | 2002-06-18 | Procede lithographique utilisant une resine a amplification chimique et comprenant des etapes de limitation d'un fluage de la resine |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2841004A1 FR2841004A1 (fr) | 2003-12-19 |
FR2841004B1 true FR2841004B1 (fr) | 2004-12-17 |
Family
ID=29595365
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0207516A Expired - Fee Related FR2841004B1 (fr) | 2002-06-18 | 2002-06-18 | Procede lithographique utilisant une resine a amplification chimique et comprenant des etapes de limitation d'un fluage de la resine |
Country Status (2)
Country | Link |
---|---|
US (1) | US20040007382A1 (fr) |
FR (1) | FR2841004B1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080140982A1 (en) * | 2006-10-05 | 2008-06-12 | Holt John M | Redundant multiple computer architecture |
US20100159392A1 (en) * | 2008-12-22 | 2010-06-24 | Shin-Etsu Chemical Co., Ltd. | Patterning process and resist composition |
EP2472327A1 (fr) | 2010-12-30 | 2012-07-04 | Rohm and Haas Electronic Materials LLC | Photorésines et leurs procédés d'utilisation |
FR2979716A1 (fr) * | 2011-09-05 | 2013-03-08 | St Microelectronics Crolles 2 | Procede de photolithographie utilisant une resine a amplification chimique |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5648198A (en) * | 1994-12-13 | 1997-07-15 | Kabushiki Kaisha Toshiba | Resist hardening process having improved thermal stability |
US6057084A (en) * | 1997-10-03 | 2000-05-02 | Fusion Systems Corporation | Controlled amine poisoning for reduced shrinkage of features formed in photoresist |
US6107002A (en) * | 1998-10-29 | 2000-08-22 | Micron Technology, Inc. | Reducing resist shrinkage during device fabrication |
-
2002
- 2002-06-18 FR FR0207516A patent/FR2841004B1/fr not_active Expired - Fee Related
-
2003
- 2003-06-10 US US10/459,118 patent/US20040007382A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
FR2841004A1 (fr) | 2003-12-19 |
US20040007382A1 (en) | 2004-01-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20080229 |