CN102576697A - Substrate for power module, substrate with heat sink for power module, power module, method for producing substrate for power module, and method for producing substrate with heat sink for power module - Google Patents

Substrate for power module, substrate with heat sink for power module, power module, method for producing substrate for power module, and method for producing substrate with heat sink for power module Download PDF

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CN102576697A
CN102576697A CN2010800472572A CN201080047257A CN102576697A CN 102576697 A CN102576697 A CN 102576697A CN 2010800472572 A CN2010800472572 A CN 2010800472572A CN 201080047257 A CN201080047257 A CN 201080047257A CN 102576697 A CN102576697 A CN 102576697A
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metallic plate
ceramic substrate
radiator
power module
quality
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CN2010800472572A
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CN102576697B (en
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长友义幸
秋山和裕
殿村宏史
寺崎伸幸
黑光祥郎
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Mitsubishi Materials Corp
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Mitsubishi Materials Corp
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Priority claimed from JP2010217591A external-priority patent/JP5741793B2/en
Priority claimed from JP2010217590A external-priority patent/JP5724273B2/en
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Abstract

Disclosed is a substrate for a power module, which comprises a ceramic substrate and a metal plate that is laminated on and bonded to a surface of the ceramic substrate and composed of aluminum or an aluminum alloy. One or more additional elements selected from among Ag, Zn, Ge, Mg, Ca, Ga and Li are solid-solved in the metal plate. The Ag concentration of the metal plate in the vicinity of the interface with the ceramic substrate is set to be 0.05-10% by mass (inclusive), or the total concentration of Zn, Ge, Mg, Ca, Ga and Li of the metal plate in the vicinity of the interface with the ceramic substrate is set to be 0.01-5% by mass (inclusive).

Description

The manufacturing approach of the power module substrate of the manufacturing approach of the power module substrate of power module substrate, band radiator, power model, power module substrate and band radiator
Technical field
The present invention relates to a kind of manufacturing approach of controlling the manufacturing approach of big electric current, the high-tension power module substrate that in semiconductor device, uses, the power module substrate of band radiator, the power model that possesses this power module substrate, this power module substrate and being with the power module substrate of radiator.
The application quotes its content based on advocating priority on September 28th, Japanese patent application 2010-091366 number 1 of japanese publication to Japanese patent application 2010-217590 number and Japanese patent application 2010-217591 number of japanese publication on April 12nd, Japanese patent application 2010-045747 number 1 of japanese publication on March 2nd, Japanese patent application 2009-243259 number 1 of japanese publication on October 22nd, 2009 at this.
Background technology
The caloric value that in semiconductor element, is used for the power component that electric power supplies with is than higher.Substrate as carrying this power component for example, shown in patent documentation 1, uses following power module substrate: on the ceramic substrate that is made up of AlN (aluminium nitride), through the solder joint Al (aluminium) metallic plate is arranged.
And this metal plate shape becomes circuit layer, on its metallic plate, is equipped with power component (semiconductor element) through scolder.
In addition, propose to have at metallic plate such as the lower surface engages Al of ceramic substrate to form metal level, on this metal level, engage the power module substrate of the band radiator of radiator.
And,, propose to have on ceramic substrate after the bonding metal plates, on this metallic plate, to form the method for circuit pattern as the means that form circuit layer.In addition, for example as patent documentation 2 is disclosed, also propose to have the sheet metal that is pre-formed to circuit pattern is engaged in the method on the ceramic substrate.
At this, in order to obtain the good bond strength of said metallic plate and ceramic substrate, the surface roughness that for example in patent documentation 3, discloses ceramic substrate is made as the technology less than 0.5 μ m.
But, when metallic plate is engaged in ceramic substrate, exist the surface roughness that only reduces ceramic substrate can not obtain fully high bond strength, can not realize the problem of the raising of reliability.For example, even the surface of ceramic substrate is utilized Al with the dry type mode 2O 3The honing process of particle is made as Ra=0.2 μ m with surface roughness, in disbonded test, also produces interface peel sometimes.And,, also produce interface peel sometimes even surface roughness is made as below the Ra=0.1 μ m through polishing.
Especially, in the miniaturization of carrying out power model, slimming, its environment for use is also severe day by day recently.In addition, from the trend that becomes big being arranged, need on radiator, set power module substrate by the caloric value of the electronic components such as semiconductor element that carried.At this moment,, power module substrate retrains, so when thermal cycle was loaded, great shear forces acted on the joint interface of metallic plate and ceramic substrate because of receiving radiator.Therefore, and compared in the past, required the raising of the bond strength between ceramic substrate and the metallic plate and the raising of reliability more.
Patent documentation 1: the open 2003-086744 communique of Japan Patent
Patent documentation 2: the open 2008-311294 communique of Japan Patent
Patent documentation 3: the openly flat 3-234045 communique of Japan Patent
Summary of the invention
One scheme of power module substrate of the present invention is following: for possessing ceramic substrate and engaging the power module substrate of the metallic plate of aluminum or aluminum alloy system in the surface laminated of this ceramic substrate; Wherein, In said metallic plate; Solid solution has Ag or is selected from one or more the interpolation element among Zn, Ge, Mg, Ca, Ga and the Li; Ag concentration with near interface said ceramic substrate in the said metallic plate is set in more than the 0.05 quality % below the 10 quality %, and the total concentration of Zn, Ge, Mg, Ca, Ga and the Li of in the perhaps said metallic plate and near interface said ceramic substrate is set in more than the 0.01 quality % below the 5 quality %.
In the power module substrate of this formation, the solution strengthening that becomes of the joint interface side sections of metallic plate.Thus, the fracture of sheet metal part office can be prevented, joint reliability can be improved.
At this; Because the Ag concentration with near interface said ceramic substrate in the said metallic plate is set in more than the 0.05 quality %; Perhaps the total concentration of Zn, Ge, Mg, Ca, Ga and Li is set in more than the 0.01 quality %, so the joint interface side sections of solution strengthening metallic plate effectively.And; Because the Ag concentration with near interface said ceramic substrate in the said metallic plate is set in below the 10 quality %; Perhaps the total concentration of Zn, Ge, Mg, Ca, Ga and Li is set in below the 5 quality %, becomes too high so can prevent the intensity of the joint interface of metallic plate.So, during the cold cycling of on this power module substrate, loading, can absorb thermal stress by metallic plate, can prevent breaking of ceramic substrate etc.
In a scheme of power module substrate of the present invention; Also can be in said metallic plate; Except Ag; Also solid solution has one or more the element that is selected among Zn, Ge, Mg, Ca, Ga and the Li, and the Ag of in the said metallic plate and near interface said ceramic substrate and the total concentration of Zn, Ge, Mg, Ca, Ga and Li are set in more than the 0.05 quality % below the 10 quality %.
At this moment, the joint interface side sections solution strengthening effectively of metallic plate.Thus, the fracture of sheet metal part office can be prevented, joint reliability can be improved.
At this, owing in the said metallic plate be set in more than the 0.05 quality %, so the joint interface side sections of solution strengthening metallic plate effectively with the Ag near interface of said ceramic substrate and the total concentration of Zn, Ge, Mg, Ca, Ga and Li.And, be set in below the 10 quality % with the Ag of near interface said ceramic substrate and the total concentration of Zn, Ge, Mg, Ca, Ga and Li owing in the said metallic plate, become too high so can prevent the intensity of the joint interface of metallic plate.
In one scheme of power module substrate of the present invention, also can for said ceramic substrate by AlN or Si 3N 4Constitute, at the joint interface of said metallic plate and said ceramic substrate, be formed with oxygen concentration and be higher than the oxygen high concentration portion that reaches the oxygen concentration in the said ceramic substrate in the said metallic plate, the thickness of this oxygen high concentration portion can be for below the 4nm.And when adding element and being Ag, said oxygen high concentration portion is more than 2 times of intragranular oxygen concentration of said ceramic substrate.
At this moment, through being present in the oxygen of joint interface, improve by AlN or Si 3N 4The ceramic substrate that constitutes and the bond strength of aluminum metallic plate.And then because the thickness of this oxygen high concentration portion is below the 4nm, the stress during through the load thermal cycle is suppressed at oxygen high concentration portion and cracks.
In addition, at this, the intragranular oxygen concentration of said ceramic substrate is meant, that part of oxygen concentration of ceramic substrate middle distance joint interface certain distance (for example, more than the 5nm).
In one scheme of power module substrate of the present invention; At the joint interface of said metallic plate and said ceramic substrate, the concentration that also can be formed with said interpolation element is the interpolation element high concentration portion more than 2 times of the concentration of the said interpolation element in the said metallic plate.
At this moment, through being present in the said interpolation element atom of near interface, can realize the raising of the bond strength of ceramic substrate and metallic plate.
In addition, the concentration of the said interpolation element in the metallic plate is meant, the concentration of that part of said interpolation element of metallic plate middle distance joint interface certain distance (for example, more than the 5nm).
In one scheme of power module substrate of the present invention; Also can constitute by AlN for said ceramic substrate; When containing the said joint interface of said interpolation element high concentration portion with the analysis of energy dispersion type x-ray analysis, the mass ratio of Al, said interpolation element, O, N is Al: add element: O: N=50～90 quality %: 1～30 quality %: 1～10 quality %: below the 25 quality %.
Perhaps, in the scheme of power module substrate of the present invention, also can for said ceramic substrate by Si 3N 4Constitute; When containing the said joint interface of said interpolation element high concentration portion with the analysis of energy dispersion type x-ray analysis, the mass ratio of Al, Si, said interpolation element, O, N is Al: Si: add element: O: N=15～45 quality %: 15～45 quality %: 1～30 quality %: 1～10 quality %: below the 25 quality %.
In addition, in the scheme of power module substrate of the present invention, also can for said ceramic substrate by Al 2O 3Constitute, when containing the said joint interface of said interpolation element high concentration portion with the analysis of energy dispersion type x-ray analysis, the mass ratio of Al, said interpolation element, O is Al: interpolation element: O=50～90 quality %: 1～30 quality %: below the 45 quality %.
When the mass ratio that is present in the said interpolation element atom of joint interface surpassed 30 quality %, Al generated too much with the product of adding element, and this product might hinder joint.In addition, because this product is reinforced near the joint interface of metallic plate to more than required, stress is in ceramic substrate when thermal cycle is loaded, and ceramic substrate might rupture.On the other hand, the mass ratio of said interpolation element atom might fully be realized the raising based on the bond strength that adds the element atom during less than 1 quality %.Therefore, the mass ratio of the interpolation element atom in the joint interface is preferably in the scope of 1～30 quality %.
At this, when carrying out the analysis based on the energy dispersion type x-ray analysis,, measure at a plurality of points (for example 10～100 points) of said joint interface, and calculate its mean value because spot diameter is minimum.And, during mensuration, not with the joint interface of the crystal boundary of metallic plate and ceramic substrate as determination object, only with the joint interface of crystal grain and ceramic substrate as determination object.
And; The energy dispersion type fluorescent X-ray Atomic Absorption SpectrophotometerICP NORAN System7 that the assay value based on the energy dispersion type x-ray analysis in this specification is to use the Thermo Fisher Scientific company (サ one モ Off イ Star シ ヤ one サ イ エ Application テ イ Off イ Star Network Co., Ltd.) of lift-launch on the electron microscope JEM-2010F that NEC makes to make carries out with accelerating voltage 200kV.
One scheme of the power module substrate of band radiator of the present invention is for having: said ceramic substrate; Be bonded on first metallic plate of a lip-deep aluminum or aluminum alloy system of this ceramic substrate; Be bonded on second metallic plate of another lip-deep aluminum or aluminum alloy system of said ceramic substrate; And be bonded on the radiator on the face of in said second metallic plate and composition surface opposition side said ceramic substrate.And in said second metallic plate and said radiator, solid solution has Ag or is selected from one or more the interpolation element among Zn, Ge, Mg, Ca, Ga and the Li.The Ag concentration of the near interface of said second metallic plate and said radiator is set in below the above 10 quality % of 0.05 quality %, and the total concentration of the Zn of the near interface of perhaps said second metallic plate and said radiator, Ge, Mg, Ca, Ga and Li is set in below the above 5 quality % of 0.01 quality %.
Power module substrate according to the band radiator of this formation; Because said second metallic plate and said radiator solid solution have Ag or be selected from one or more the interpolation element among Zn, Ge, Mg, Ca, Ga and the Li, therefore the joint interface side sections separately of said second metallic plate and said radiator obtains solution strengthening.
And; Near the joint interface of said second metallic plate and said radiator Ag concentration is set in more than the 0.05 quality %; Perhaps the total concentration of Zn, Ge, Mg, Ca, Ga and Li is set in more than the 0.01 quality %, therefore the joint interface side sections of said second metallic plate of solution strengthening effectively and said radiator.And; Near the joint interface of said second metallic plate and said radiator Ag concentration is set in below the 10 quality %; Perhaps the total concentration of Zn, Ge, Mg, Ca, Ga and Li is set in below the 5 quality %; The intensity that can prevent the joint interface of said second metallic plate and said radiator becomes too high, can absorb thermal deformation by said second metallic plate.
In one scheme of the power module substrate of band radiator of the present invention; Also can be in said second metallic plate and said radiator; Except Ag; Also solid solution has one or more the element that is selected among Zn, Ge, Mg, Ca, Ga and the Li, and the total concentration of the Ag of the near interface of said second metallic plate and said radiator and Zn, Ge, Mg, Ca, Ga and Li is set in below the above 10 quality % of 0.05 quality %.
At this moment, the joint interface side sections solution strengthening of said second metallic plate and said radiator can prevent the generation of the fracture in second metallic plate and the said radiator, can improve joint reliability.
At this; The total concentration of the Ag of the near interface of said second metallic plate and said radiator and Zn, Ge, Mg, Ca, Ga and Li is set in more than the 0.05 quality %, therefore the interface side part of said second metallic plate of solution strengthening effectively and said radiator.And the total concentration of the Ag of the near interface of said second metallic plate and said radiator and Zn, Ge, Mg, Ca, Ga and Li is set in below the 10 quality %, can prevent that the intensity of the joint interface of said second metallic plate and said radiator from becoming too high.
Power model of the present invention is characterised in that to possess the power module substrate of a scheme of the present invention and be equipped on the electronic component on the said power module substrate.
According to the power model of this formation, the bond strength of ceramic substrate and metallic plate is high, even under the situation of environment for use sternness, also can improve its reliability significantly.
One scheme of the manufacturing approach of power module substrate of the present invention is the manufacturing approach of power module substrate that possesses ceramic substrate and engage the metallic plate of aluminum or aluminum alloy system in the surface laminated of this ceramic substrate.This manufacturing approach has: the set operation; At least one side in the composition surface of the composition surface of said ceramic substrate and said metallic plate; Set is selected from one or more the interpolation element among Ag, Zn, Ge, Mg, Ca, Ga and the Li, forms the fixation layer that contains this interpolation element; Lamination, under the state of getting involved said fixation layer, said ceramic substrate of lamination and said metallic plate; Heating process heats when being pressurizeed by the said ceramic substrate of lamination and said metallic plate on laminating direction, forms the motlten metal zone at the interface of said ceramic substrate and said metallic plate; And solidify operation, engage said ceramic substrate and said metallic plate through solidifying this motlten metal zone.And, in said lamination, make said interpolation element at 0.01mg/cm 2Above 10mg/cm 2Get involved interface in the following scope at said ceramic substrate and said metallic plate.In said heating process, spread to said metallic plate through making said interpolation element, thereby form said motlten metal zone at the interface of said ceramic substrate and said metallic plate.
According to the manufacturing approach of the power module substrate of this formation, go into to be selected from one or more the interpolation element among Ag, Zn, Ge, Mg, Ca, Ga and the Li in the joint interface intermediary of said metallic plate and said ceramic substrate.At this, because the such element of Ag, Zn, Ge, Mg, Ca, Ga and Li is the element that reduces the fusing point of aluminium, therefore comparing under the cryogenic conditions, it is regional to form motlten metal at the interface of metallic plate and ceramic substrate.
Thereby, even under the engaging condition of lower temperature, short time, engage, also can firm engagement ceramic substrate and metallic plate.
In addition, need not to use solder paper tinsel etc., just can low-cost produce the power module substrate of bonding metal plates and ceramic substrate effectively.
Owing to do not use the solder paper tinsel just can engage said ceramic substrate and said metallic plate, so need not to carry out the positioning work etc. of solder paper tinsel.Therefore, in the time of for example will being pre-formed sheet metal for the circuit pattern shape and being engaged in ceramic substrate, also can be with waiting the problem that causes prevent trouble before it happens by dislocation.
And, in said lamination, the set amount that gets involved in the said interpolation element at the interface of said ceramic substrate and said metallic plate is made as 0.01mg/cm 2More than, therefore the motlten metal zone can be formed effectively, and ceramic substrate and metallic plate can be engaged securely at the interface of ceramic substrate and metallic plate.
And then, the set amount that gets involved in the said interpolation element at the interface of said ceramic substrate and said metallic plate is made as 10mg/cm 2Below, therefore can prevent in fixation layer, to crack, and can form the motlten metal zone effectively at the interface of ceramic substrate and metallic plate.And then, can prevent that said interpolation element from too making the intensity of metallic plate of near interface too uprise to metallic plate side diffusion.Thus, when power module substrate load cold cycling, can absorb thermal stress by metallic plate, and can prevent breaking of ceramic substrate etc.
And then, in said lamination, make said interpolation element at 0.01mg/cm 2Above 10mg/cm 2Get involved in the interface of said ceramic substrate and said metallic plate in the following scope; Therefore can make Ag concentration in the said metallic plate and the near interface said ceramic substrate and be more than the 0.05 quality % below the 10 quality %, perhaps the total concentration of Zn, Ge, Mg, Ca, Ga and Li is the power module substrates below the above 5 quality % of 0.01 quality %.
And, owing on metallic plate and ceramic substrate, directly form fixation layer, so oxide film thereon only is formed on the surface of metallic plate.So, compare when having used the solder paper tinsel that forms oxide film thereon on the two sides, be present in the total thickness attenuation of oxide film thereon at the interface of metallic plate and ceramic substrate, therefore can improve the qualification rate of initial engagement.
And, the said interpolation element of the direct set of at least one side in the composition surface of said ceramic substrate and the composition surface of said metallic plate, but consider from the viewpoint of productivity ratio, preferably at the said interpolation element of the composition surface of metallic plate set.
In addition, also can be at least one side in the composition surface of the composition surface of said ceramic substrate and said metallic plate, the said interpolation element of independent respectively set and form multilayer and add the element layer.
In one scheme of the manufacturing approach of power module substrate of the present invention, also can be in said set operation, with Al with the set of said interpolation element.
At this moment since with Al with the set of said interpolation element, therefore formed fixation layer contains Al.Therefore, in heating process, the preferentially fusion and form the motlten metal zone conscientiously of this fixation layer, and can engage ceramic substrate and metallic plate securely.And, can prevent the oxidation of oxidation activity elements such as Mg, Ca, Li.In addition, for Al with the set of said interpolation element, simultaneously said interpolation element of vapor deposition and Al.Also can the alloy of said interpolation element and Al be carried out sputter as target.In addition, but also lamination Al and add element.
In one scheme of the manufacturing approach of power module substrate of the present invention, preferred said set operation forms said fixation layer through at least one side's coating Ag slurry in the composition surface of the composition surface of said ceramic substrate and said metallic plate.
At this moment, can form fixation layer effectively through coating Ag slurry.In addition, burn till even the Ag slurry heats in air atmosphere, Ag can oxidation yet, therefore can form the fixation layer that contains Ag easily.
And when using the Ag slurry, the oxidation of the metallic plate when preventing in atmosphere heating preferably is coated on the ceramic substrate side.In addition, also can be at the said ceramic substrate of state laminated and the said metallic plate of coating Ag slurry, when being heated, carry out burning till of Ag slurry by the said ceramic substrate of lamination and said metallic plate.
One scheme of the manufacturing approach of the power module substrate of band radiator of the present invention be possess ceramic substrate, with first metallic plate of the aluminum or aluminum alloy system of a surface engagement of this ceramic substrate, with second metallic plate of the aluminum or aluminum alloy system of another surface engagement of said ceramic substrate and the manufacturing approach of power module substrate that is bonded on the band radiator of the said radiator on the face of in said second metallic plate and composition surface opposition side said ceramic substrate.This manufacturing approach has: ceramic substrate engages operation, engages said ceramic substrate with said first metallic plate and engage said ceramic substrate and said second metallic plate; And radiator joint operation, in the one side of said second metallic plate, engage said radiator.Said radiator engages operation to have: add the element layer and form operation, at least one side's set in the composition surface of the composition surface of said second metallic plate and said radiator be selected among Ag, Zn, Ge, Mg, Ca, Ga and the Li one or more the interpolation element and form interpolation element layer; Radiator lamination operation is at said second metallic plate of state laminated and the said radiator of getting involved said interpolation element layer; The radiators heat operation heats when being pressurizeed by said second metallic plate of lamination and said radiator on laminating direction, forms the motlten metal zone at the interface of said second metallic plate and said radiator; And motlten metal solidifies operation, through solidifying this motlten metal zone, engages said second metallic plate and said radiator.In said radiators heat operation, arrive said second metallic plate and said radiator through the interpolation Elements Diffusion that makes said interpolation element layer, form said motlten metal zone at the interface of said second metallic plate and said radiator.
In the manufacturing approach of the power module substrate of the band radiator of this formation, go into to be selected from one or more the interpolation element among Ag, Zn, Ge, Mg, Ca, Ga and the Li in the joint interface intermediary of second metallic plate and radiator.This adds the element of element for the fusing point of reduction aluminium, therefore can under the lower temperature condition, form the motlten metal zone at the interface of the radiator and second metallic plate.
Therefore, even under the engaging condition of lower temperature, short time, engage, also can engage the radiator and second metallic plate securely.
In addition, need not to use the solder paper tinsel of the Al-Si system that makes difficulty etc., just can make the power module substrate of the band radiator that second metallic plate and radiator engage conscientiously with low cost.
And then, do not use the solder paper tinsel, element is added in the direct set of at least one side in the composition surface of the composition surface of said radiator and said second metallic plate, therefore need not to carry out the solder paper tinsel to bit manipulation etc.
And; On the composition surface of the composition surface of said radiator and said second metallic plate directly set add under the situation of element; Oxide film thereon only is formed on the surface of second metallic plate and radiator; Be present in the total thickness attenuation of oxide film thereon at the interface of second metallic plate and radiator thus, therefore can improve the qualification rate of initial engagement.
In one scheme of the manufacturing approach of the power module substrate of band radiator of the present invention, also can engage operation and carry out simultaneously for said ceramic substrate engages operation and said radiator.
At this moment, carry out said ceramic substrate simultaneously and engage operation and said radiator joint operation, therefore can significantly cut down their the required cost of joint.And, need not to carry out repeated heating, cooling is accomplished, therefore can realize the minimizing of warpage of the power module substrate of this band radiator.
In one scheme of the manufacturing approach of the power module substrate of band radiator of the present invention, said interpolation element layer forms in the operation, can also be with Al with the set of said interpolation element.
At this moment, in the radiators heat operation, the preferentially fusion and form the motlten metal zone conscientiously of this interpolation element layer, and can engage the radiator and second metallic plate securely.And, can prevent the oxidation of oxidation activity elements such as Mg, Ca, Li.In addition, for Al with the set of said interpolation element, simultaneously said interpolation element of vapor deposition and Al.Also can the alloy of said interpolation element and Al be carried out sputter as target.In addition, but also lamination Al and add element.
And in the power module substrate of the band radiator of the invention described above and the scheme of manufacturing approach thereof, the thickness of said second metallic plate may be thicker than the thickness of said first metallic plate.
At this moment, can make the rigidity that is provided with heat sink side be relatively higher than the rigidity with its opposition side.Can suppress warpage thus with the power module substrate of radiator.
And then in the scheme of the power module substrate of band radiator of the present invention and manufacturing approach thereof, said second metallic plate also can a plurality of metallic plate of lamination and is constituted.
At this moment, can fully relax with this second metallic plate and result from the thermal deformation of difference of thermal coefficient of expansion of radiator and ceramic substrate, can be suppressed at the generation of breaking in the ceramic substrate.
And; In one scheme of the manufacturing approach of the power module substrate of the manufacturing approach of the power module substrate of the invention described above or band radiator; Said set operation also can or be dispersed with the coating of slurry and the printing ink etc. of powder, the said interpolation element of set in any composition surface of said ceramic substrate, said metallic plate, said radiator or said second metallic plate through plating, vapor deposition, CVD, sputter, cold spraying.
At this moment, said interpolation element is got involved in joint interface conscientiously.And, but high accuracy is regulated the set amount of said interpolation element, and can engage ceramic substrate and metallic plate or radiator and said second metallic plate securely.
And, to use when containing the slurry of said interpolation element, the oxidation of the metallic plate when preventing in atmosphere heating preferably is coated on the ceramic substrate side.In addition; The said ceramic substrate of state laminated and the said metallic plate that also can contain the slurry of said interpolation element in coating; On laminating direction, when heating when being pressurizeed, contain the burning till of slurry of said interpolation element by the said ceramic substrate of lamination and said metallic plate.
According to the present invention, the manufacturing approach of metallic plate with the power module substrate of the power module substrate that ceramic substrate engages conscientiously and the thermal cycle reliability is high, the manufacturing approach of being with power module substrate, the power model that possesses this power module substrate and this power module substrate of radiator, band radiator can be provided.
Description of drawings
Fig. 1 is to use the brief description figure of power model of the power module substrate of first execution mode of the present invention.
Fig. 2 is circuit layer and the Ag CONCENTRATION DISTRIBUTION of metal level and the key diagram of Ge CONCENTRATION DISTRIBUTION of the power module substrate of expression first execution mode of the present invention.
Fig. 3 is the tem observation figure of circuit layer and metal level (metallic plate) and the joint interface of ceramic substrate of the power module substrate of first execution mode of the present invention.
Fig. 4 is the flow chart of manufacturing approach of the power module substrate of expression first execution mode of the present invention.
Fig. 5 is the key diagram of manufacturing approach of the power module substrate of expression first execution mode of the present invention.
Fig. 6 is near the key diagram the joint interface of metallic plate and ceramic substrate in the presentation graphs 5.
Fig. 7 is to use the brief description figure of power model of the power module substrate of second execution mode of the present invention.
Fig. 8 is the key diagram of Ag CONCENTRATION DISTRIBUTION of circuit layer and metal level of the power module substrate of expression second execution mode of the present invention.
Fig. 9 is the sketch map of circuit layer and metal level (metallic plate) and the joint interface of ceramic substrate of the power module substrate of second execution mode of the present invention.
Figure 10 is the flow chart of manufacturing approach of the power module substrate of expression second execution mode of the present invention.
Figure 11 is the key diagram of manufacturing approach of the power module substrate of expression second execution mode of the present invention.
Figure 12 is to use the brief description figure of power model of the power module substrate of the 3rd execution mode of the present invention.
Figure 13 is the key diagram of Ag CONCENTRATION DISTRIBUTION of circuit layer and metal level of the power module substrate of expression the 3rd execution mode of the present invention.
Figure 14 is the sketch map of circuit layer and metal level (metallic plate) and the joint interface of ceramic substrate of the power module substrate of the 3rd execution mode of the present invention.
Figure 15 is the flow chart of manufacturing approach of the power module substrate of expression the 3rd execution mode of the present invention.
Figure 16 is the key diagram of manufacturing approach of the power module substrate of expression the 3rd execution mode of the present invention.
Figure 17 is the key diagram of manufacturing approach of power module substrate of the band radiator that possesses power module substrate of expression the 3rd execution mode of the present invention.
Figure 18 is to use the brief description figure of power model of power module substrate of the band radiator of the 4th execution mode of the present invention.
Figure 19 is the key diagram of Ag CONCENTRATION DISTRIBUTION of metal level and radiator of power module substrate of the band radiator of expression the 4th execution mode of the present invention.
Figure 20 is the flow chart of manufacturing approach of power module substrate of the band radiator of expression the 4th execution mode of the present invention.
Figure 21 is the key diagram of manufacturing approach of power module substrate of the band radiator of expression the 4th execution mode of the present invention.
Figure 22 is near the key diagram with the joint interface of radiator of second metallic plate (metal level) among expression Figure 21.
Figure 23 is to use the brief description figure of power model of power module substrate of the band radiator of the 5th execution mode of the present invention.
Figure 24 is the flow chart of manufacturing approach of power module substrate of the band radiator of expression the 5th execution mode of the present invention.
Figure 25 is the key diagram of manufacturing approach of power module substrate of the band radiator of expression the 5th execution mode of the present invention.
Figure 26 is the key diagram of manufacturing approach of power module substrate of the band radiator of expression the 5th execution mode of the present invention.
Figure 27 is the key diagram of CONCENTRATION DISTRIBUTION of interpolation element (Ge) of circuit layer and metal level of the power module substrate of expression the 6th execution mode of the present invention.
Figure 28 is the key diagram of CONCENTRATION DISTRIBUTION of interpolation element (Mg) of circuit layer and metal level of the power module substrate of expression the 7th execution mode of the present invention.
Figure 29 is the key diagram of CONCENTRATION DISTRIBUTION of interpolation element (Zn) of circuit layer and metal level of the power module substrate of expression the 8th execution mode of the present invention.
Figure 30 is the key diagram of CONCENTRATION DISTRIBUTION of interpolation element (Ge) of metal level and radiator of power module substrate of the band radiator of expression the 9th execution mode of the present invention.
Figure 31 is the brief description figure of power model of power module substrate of the use band radiator of other execution modes of the present invention.
Embodiment
Below, with reference to accompanying drawing execution mode of the present invention is described.
At first, utilize Fig. 1～Fig. 6 that first execution mode of the present invention is described.
Power model 1 shown in Figure 1 possesses and has: power module substrate 10 is equipped with circuit layer 12; Semiconductor chip 3 is engaged in the surface of circuit layer 12 through layer 2; And radiator 4.At this, the scolder that layer 2 for example for Sn-Ag system, Sn-In system or Sn-Ag-Cu is.In addition, in this execution mode, be provided with Ni coating (not shown) between circuit layer 12 and the layer 2.
Power module substrate 10 possesses and has: ceramic substrate 11; Circuit layer 12 is equipped on the one side (in Fig. 1 for upper surface) of this ceramic substrate 11; Reach metal level 13, be equipped on the another side (in Fig. 1, being lower surface) of ceramic substrate 11.
Ceramic substrate 11 is the substrates that are electrically connected that prevent between circuit layer 12 and the metal level 13, is made up of the high AlN of insulating properties (aluminium nitride).And the thickness setting of ceramic substrate 11 is set at 0.635mm in this execution mode in the scope of 0.2～1.5mm.In addition, as shown in Figure 1, in this execution mode, the width of ceramic substrate 11 (the left and right directions length of Fig. 1) is set at the width of being wider than circuit layer 12 and metal level 13.
Circuit layer 12 engages the metallic plate 22 with conductivity through the one side at ceramic substrate 11 and forms.In this execution mode, the metallic plate 22 that forms circuit layer 12 is that purity is aluminium (the so-called 4N aluminium) milled sheet more than 99.99%.
Metal level 13 forms through the another side bonding metal plates 23 at ceramic substrate 11.In this execution mode, the metallic plate 23 that forms metal level 13 is that purity is aluminium (the so-called 4N aluminium) milled sheet more than 99.99%.
Radiator 4 is used to cool off above-mentioned power module substrate 10.This radiator 4 possesses and has: top plate portion 5 engages with power module substrate 10; And stream 6, be used to make coolant (for example cooling water) circulation.The top plate portion 5 of radiator 4 preferably is made up of the good material of heat conductivity, in this execution mode, is made up of A6063 (aluminium alloy).
And, in this execution mode, be provided with resilient coating 15 between the top plate portion 5 of radiator 4 and the metal level 13.This resilient coating 15 is made up of aluminum or aluminum alloy or the composite material (for example AlSiC etc.) that contains aluminium.
And; As shown in Figure 2; In the joint interface 30 of ceramic substrate 11 and circuit layer 12 (metallic plate 22) and metal level 13 (metallic plate 23); In circuit layer 12 (metallic plate 22) and metal level 13 (metallic plate 23), except Ag, also solid solution has one or more the element that is selected among Zn, Ge, Mg, Ca, Ga and the Li as adding element.
Be formed with the concentration dipping bed 33 that Ag and one or more the concentration of element that is selected among Zn, Ge, Mg, Ca, Ga and the Li reduce along with leaving from joint interface 30 along laminating direction gradually in the vicinity of the joint interface 30 of circuit layer 12 and metal level 13.Near the joint interface 30 of circuit layer 12 and metal level 13 Ag concentration and one or more the total concentration of element that is selected among Zn, Ge, Mg, Ca, Ga and the Li are set in the scope below the above 10 quality % of 0.05 quality %.
In this execution mode, also solid solution has Ge as the interpolation element except Ag, and the total of near Ag concentration the joint interface 30 of circuit layer 12 and metal level 13 and Ge concentration is set in below the above 10 quality % of 0.05 quality %.
In addition, near Ag concentration the joint interface 30 of circuit layer 12 and metal level 13 and Ge concentration are to analyze (spot diameter 30 μ m) at the mean value that carries out 5 mensuration apart from 50 μ m positions of joint interface 30 through EPMA.And, the chart of Fig. 2 be middle body at circuit layer 12 (metallic plate 22) and metal level 13 (metallic plate 23) in the enterprising line linearity analysis of laminating direction, and the chart that the concentration of said 50 μ m positions is obtained as benchmark.
And, as shown in Figure 3 when in transmission electron microscope, observing the joint interface 30 of ceramic substrate 11 and circuit layer 12 (metallic plate 22) and metal level 13 (metallic plate 23), be formed with the Ag high concentration portion 32 that concentrates Ag at joint interface 30.In this Ag high concentration portion 32, Ag concentration is more than 2 times of Ag concentration in circuit layer 12 (metallic plate 22) and the metal level 13 (metallic plate 23).In addition, the thickness H of this Ag high concentration portion 32 is below the 4nm.
And then in this Ag high concentration portion 32, oxygen concentration is higher than the oxygen concentration in the ceramic substrate 11.
In addition, as shown in Figure 3, in the joint interface 30 of this observation, the central authorities between the joint interface side end of the lattice image of the interface side end of the lattice image of circuit layer 12 (metallic plate 22) and metal level 13 (metallic plate 23) and ceramic substrate 11 are made as datum level S.And; Ag concentration in circuit layer 12 (metallic plate 22) and the metal level 13 (metallic plate 23) is meant, apart from the Ag concentration of that part of (the A point among Fig. 3) of joint interface 30 certain distances in circuit layer 12 (metallic plate 22) and the metal level 13 (metallic plate 23) (being more than the 5nm in this execution mode).
And the oxygen concentration in the ceramic substrate 11 is meant, apart from the intragranular oxygen concentration of that part of (the C point among Fig. 3) of 30 certain distances of the joint interface in the ceramic substrate 11 (being more than the 5nm in this execution mode).
And the mass ratio of the Al when analyzing this joint interface 30 (B point among Fig. 3) through energy dispersion type x-ray analysis (EDS), Ag, O, N is Al: Ag: O: N=50～90 quality %: 1～30 quality %: 1～10 quality %: below the 25 quality %.Spot diameter when carrying out the analysis based on EDS is 1～4nm.Measure joint interface 30 at a plurality of points (for example being 20 points) in this execution mode, calculate its mean value.And; Not with the joint interface 30 of the crystal boundary of the metallic plate 22,23 of forming circuit layer 12 and metal level 13 and ceramic substrate 11 as determination object, only with the joint interface 30 of the crystal grain of the metallic plate 22,23 of forming circuit layer 12 and metal level 13 and ceramic substrate 11 as determination object.
Below, with reference to Fig. 4 to Fig. 6 the manufacturing approach of the power module substrate 10 of first embodiment of the invention is described.
(set operation S01)
At first, like Fig. 5 and shown in Figure 6,, at each composition surface set Ag of metallic plate 22,23 be selected from one or more element among Zn, Ge, Mg, Ca, Ga and the Li, form fixation layer 24,25 as adding element through sputter.
At this, in this execution mode, use Ag and Ge as adding element.Ag amount in the fixation layer 24,25 is set in 0.01mg/cm 2Above 10mg/cm 2Below.The Ge amount is set in 0.01mg/cm 2Above 10mg/cm 2Below.
(lamination S02)
Then, as shown in Figure 5, metallic plate 22 is laminated to the one side side of ceramic substrate 11.And, metallic plate 23 is laminated to the another side side of ceramic substrate 11.At this moment, like Fig. 5 and shown in Figure 6, to be formed with the mode lamination of the face of fixation layer 24,25 in the metallic plate 22,23 towards ceramic substrate 11.That is, between metallic plate 22 and ceramic substrate 11, getting involved has fixation layer 24 (Ag and Ge), and getting involved between metallic plate 23 and the ceramic substrate 11 has fixation layer 25 (Ag and Ge).So form layered product 20.
(heating process S03)
The layered product 20 that then, will in lamination S02, form is so that (pressure is 1～35kgf/cm to its laminating direction pressurization 2) state under pack into and heat in the vacuum furnace.Thus, as shown in Figure 6, in the interface formation motlten metal zone 26 of metallic plate 22, in the interface formation motlten metal zone 27 of metallic plate 23 with ceramic substrate 11 with ceramic substrate 11.As shown in Figure 6; This motlten metal zone the 26, the 27th, through what form as follows: the Ag of fixation layer 24,25 and Ge are to metallic plate 22,23 diffusions; Thereby near Ag concentration the fixation layer of metallic plate 22,23 24,25 and Ge concentration rise; Fusing point reduces, and forms motlten metal zone 26,27 thus.In addition, above-mentioned pressure is less than 1kgf/cm 2The time, might carry out engaging of ceramic substrate 11 and metallic plate 22,23 well.And above-mentioned pressure surpasses 35kgf/cm 2The time, metallic plate 22,23 might be out of shape.Thereby above-mentioned moulding pressure preferably is located at 1～35kgf/cm 2Scope in.
At this, in this execution mode, the pressure in the vacuum furnace is set in 10 -3～10 -6In the scope of Pa, heating-up temperature is set in more than 550 ℃ in the scope below 650 ℃.
(solidifying operation S04)
Then, under the state that is formed with motlten metal zone 26,27, temperature is remained constant.Like this, Ag and the Ge in the motlten metal zone 26,27 further spreads to metallic plate 22,23 sides.Thus, once Ag concentration and the Ge concentration for the part in motlten metal zone 26,27 reduced gradually, and fusing point rises, and solidified in that temperature is remained under the constant state.That is, ceramic substrate 11 engages through so-called diffusion bond (Transient Liquid Phase Diffusion Bonding) with metallic plate 22,23.So, be cooled to normal temperature after solidifying.
So, the metallic plate 22,23 that becomes circuit layer 12 and metal level 13 engages with ceramic substrate 11, produces the power module substrate 10 of this execution mode.
As the power module substrate 10 and power model 1 of this execution mode of above formation in; Because possessing has at the composition surface set Ag of metallic plate 22,23 and the set operation S01 of Ge, so Ag and Ge are arranged in joint interface 30 interventions of metallic plate 22,23 and ceramic substrate 11.At this,, therefore under the condition of lower temperature, also can form the motlten metal zone at the interface of metallic plate and ceramic substrate because Ag and Ge are the element of the fusing point of reduction aluminium.
And then; Ag and Ge through fixation layer 24,25 engage ceramic substrate 11 and circuit layer 12 (metallic plate 22) and metal level 13 (metallic plate 23) to metallic plate 22,23 diffusions; Even therefore under the engaging condition of lower temperature, short time, engage, also can firm engagement ceramic substrate 11 and metallic plate 22,23.
And, in the joint interface 30 of ceramic substrate 11 and circuit layer 12 (metallic plate 22) and metal level 13 (metallic plate 23), Ag and Ge are arranged at circuit layer 12 (metallic plate 22) and metal level 13 (metallic plate 23) solid solution.And the Ag of each joint interface 30 side of circuit layer 12 and metal level 13 and Ge amount to concentration and are set in below the above 10 quality % of 0.05 quality %.Therefore, the part solution strengthening of joint interface 30 sides of circuit layer 12 (metallic plate 22) and metal level 13 (metallic plate 23) can prevent the generation of the be full of cracks in circuit layer 12 (metallic plate 22) and the metal level 13 (metallic plate 23).
And Ag and Ge are fully to the diffusion of metallic plate 22,23 sides, with firm engagement metallic plate 22,23 and ceramic substrate 11 in heating process S03.
In addition, in this execution mode, ceramic substrate 11 is made up of AlN, and the joint interface 30 at metallic plate 22,23 and ceramic substrate 11 that becomes circuit layer 12 and metal level 13 is formed with the Ag high concentration portion 32 of concentrated Ag.The Ag concentration of this Ag high concentration portion 32 becomes more than 2 times of Ag concentration in circuit layer 12 (metallic plate 22) and the metal level 13 (metallic plate 23), the raising of the Ag atoms at suitable temperatures ceramic substrate that therefore can be through being present near interface and the bond strength of metallic plate.In addition, the thickness of this Ag high concentration portion 32 is below the 4nm, and the stress in the time of therefore suppressing through the load thermal cycle causes in Ag high concentration portion 32, cracking.
And then; The mass ratio of Al when analyzing joint interface 30 through the energy dispersion type x-ray analysis in this execution mode, Ag, O, N is Al: Ag: O: N=50～90 quality %: 1～30 quality %: 1～10 quality %: below the 25 quality %; Therefore can prevent that Al generates the problem that engages that too much hinders with the product of Ag in joint interface 30, can fully play simultaneously because the raising effect of the bond strength of Ag atoms at suitable temperatures.And, prevent to exist in the joint interface 30 the high part of thick oxygen concentration, the generation of the crackle in the time of can suppressing to load thermal cycle.
And, need not to use the solder paper tinsel of making difficult Al-Si system on the composition surface of metallic plate, can make power module substrate 10 with low cost.And then, need not to carry out the positioning work of solder paper tinsel etc., just can engage ceramic substrate 11 and metallic plate 22,23 conscientiously.Thereby, can effectively produce this power module substrate 10.
And, owing to be formed with fixation layer 24,25, get involved thus in the oxide film thereon at the interface of metallic plate 22,23 and ceramic substrate 11 and only be present in the surface of metallic plate 22,23, so can improve the qualification rate of initial engagement on the composition surface of metallic plate 22,23.
Then, with reference to Fig. 7 to Figure 11 second execution mode of the present invention is described.
Power model 101 shown in Figure 7 possesses and has: power module substrate 110 is equipped with circuit layer 112; Semiconductor chip 3 is engaged in the surface of circuit layer 112 through layer 2; And radiator 140.
Power module substrate 110 possesses and has: ceramic substrate 111; Circuit layer 112 is equipped on the one side (in Fig. 7 for upper surface) of this ceramic substrate 111; Reach metal level 113, be equipped on the another side (in Fig. 7, being lower surface) of ceramic substrate 111.
Ceramic substrate 111 is by the high Al of insulating properties 2O 3(aluminium oxide) constitutes.And the thickness setting of ceramic substrate 111 is set at 0.635mm in this execution mode in the scope of 0.2～1.5mm.
Circuit layer 112 engages first metallic plate 122 with conductivity through the one side at ceramic substrate 111 and forms.
Metal level 113 engages second metallic plate 123 through the another side at ceramic substrate 111 and forms.
In this execution mode, first metallic plate 122 and second metallic plate 123 are that purity is the aluminium milled sheet more than 99.99%.
Radiator 140 is used to cool off said power module substrate 110.This radiator 140 possesses and has: top plate portion 141 engages with power module substrate 110; And stream 142, be used to make the coolant circulation.The top plate portion 141 of radiator 140 preferably is made up of the good material of heat conductivity, in this execution mode, is made up of A6063 (aluminium alloy).
In this execution mode, be provided with resilient coating 115 between the top plate portion 141 of radiator 140 and the metal level 113, this resilient coating 115 is made up of aluminum or aluminum alloy or the composite material (for example AlSiC etc.) that contains aluminium.
And as shown in Figure 8, in the joint interface 130 of ceramic substrate 111 and circuit layer 112 (metallic plate 122) and metal level 113 (metallic plate 123), in circuit layer 112 (metallic plate 122) and metal level 113 (metallic plate 123), solid solution has Ag.
Specifically, be formed with Ag concentration in the vicinity of the joint interface 130 of circuit layer 112 and metal level 113 along with leaving and the concentration dipping bed 133 that reduces gradually to laminating direction from joint interface 130.At this, near the Ag concentration the joint interface 130 of circuit layer 112 and metal level 113 is set in below the above 10 quality % of 0.05 quality %.
In addition, near the Ag concentration the joint interface 130 of circuit layer 112 and metal level 113 is to analyze (spot diameter 30 μ m) at the mean value that carries out 5 mensuration apart from 50 μ m positions of joint interface 130 through EPMA.And, the chart of Fig. 8 be middle body at circuit layer 112 (metallic plate 122) and metal level 113 (metallic plate 123) in the enterprising line linearity analysis of laminating direction, and the chart that the concentration of said 50 μ m positions is obtained as benchmark.
And, as shown in Figure 9 when in transmission electron microscope, observing the joint interface 130 of ceramic substrate 111 and circuit layer 112 (metallic plate 122) and metal level 113 (metallic plate 123), be formed with the Ag high concentration portion 132 that concentrates Ag at joint interface 130.In this Ag high concentration portion 132, Ag concentration is more than 2 times of Ag concentration in circuit layer 112 (metallic plate 122) and the metal level 113 (metallic plate 123).In addition, the thickness H of this Ag high concentration portion 132 is below the 4nm.
In addition; As shown in Figure 9; In the joint interface 130 of this observation, the central authorities between the joint interface side end of the lattice image of the interface side end of the lattice image of circuit layer 112 (metallic plate 122) and metal level 113 (metallic plate 123) and ceramic substrate 111 are made as datum level S.And; Ag concentration in circuit layer 112 (metallic plate 122) and the metal level 113 (metallic plate 123) is meant, apart from the Ag concentration of the part of joint interface 130 certain distances in circuit layer 112 (metallic plate 122) and the metal level 113 (metallic plate 123) (being more than the 5nm in this execution mode).
And, be Al: Ag: O=50～90 quality % through the mass ratio of the Al of energy dispersion type x-ray analysis (EDS) when analyzing this joint interface 130, Ag, O: 1～30 quality %: below the 45 quality %.Spot diameter when in addition, carrying out analysis based on EDS is 1～4nm.Measure joint interface 130 at a plurality of points (for example being 20 points) in this execution mode, calculate its mean value.And; Not with the joint interface 130 of the crystal boundary of the metallic plate 122,123 of forming circuit layer 112 and metal level 113 and ceramic substrate 111 as determination object, only with the joint interface 130 of the crystal grain of the metallic plate 122,123 of forming circuit layer 112 and metal level 113 and ceramic substrate 111 as determination object.
Below, with reference to Figure 10 and Figure 11 the manufacturing approach of the power module substrate of above-mentioned formation is described.
(Ag slurry painting process S101)
At first, shown in figure 11, through one side and the another side coating Ag slurry of screen painting, form Ag pulp layer 124a, 125a at ceramic substrate 111.In addition, be about 0.02～200 μ m after the thickness drying of Ag pulp layer 124a, 125a.
This Ag pulp layer 124a, 125a are heated to 150～200 ℃ except that after desolvating, under 300～500 ℃, burn till, burn till decomposing the Ag pulp layer.
Contain Ag powder, resin, solvent and dispersant at the Ag of this use slurry.And the content of Ag powder is that remainder is resin, solvent and dispersant below the above 90 quality % of 60 whole quality % of Ag slurry.In addition, the content of Ag powder is made as 85 whole quality % of Ag slurry.
And in this execution mode, the viscosity of Ag slurry is adjusted into below the above 500Pas of 10Pas, more preferably is adjusted into below the above 300Pas of 50Pas.
The particle diameter of Ag powder is that using average grain diameter in this execution mode is the Ag powder of 0.8 μ m below the above 1.0 μ m of 0.05 μ m.
It is the solvent more than 200 ℃ that solvent is fit to boiling point, for example can use α-terpineol, acetate of butyl carbitol, diethylene glycol dibutyl ether etc.And, in this execution mode, use diethylene glycol dibutyl ether.
Resin is an adjustment Ag slurry viscosity, is adapted at the resin that decomposes more than 500 ℃.For example, can be suitable for acrylic resin, alkyd resins etc.Use ethyl cellulose in this execution mode.
In addition, add the dispersant of omega-dicarboxylic acids in this execution mode.And, also can not add dispersant and constitute the Ag slurry.
(lamination S102)
Then, metallic plate 122 is laminated to the one side side of ceramic substrate 111.And, metallic plate 123 is laminated to the another side side of ceramic substrate 111.
(heating process S103)
Then, (pressure is 1～35kgf/cm in the laminating direction pressurization with metallic plate 122, ceramic substrate 111 and metallic plate 123 2) state under pack into and heat in the vacuum furnace.At this moment, in temperature-rise period, remove the resin that decomposes in the Ag pulp layer, form Ag and burn till layer 124,125 at 400～500 ℃ time point.This Ag burns till the Ag fixation layer that layer 124,125 forms in this execution mode.
And through further heating, Ag burns till the Ag of layer 124,125 towards metallic plate 122,123 diffusions, forms the motlten metal zone respectively at the interface of metallic plate 122,123 and ceramic substrate 111.At this, in this execution mode, the pressure in the vacuum furnace is set in 10 -6Pa above 10 -3Below the Pa, heating-up temperature is set in more than 600 ℃ below 650 ℃.
(solidifying operation S104)
Then, under the state in motlten metal zone temperature is remained constantly being formed with, the Ag in the motlten metal zone is further to metallic plate 122,123 diffusions.Thus, once the Ag concentration for the regional part of motlten metal reduced gradually, and fusing point rises, and remains under the constant state in temperature and solidifies.That is, ceramic substrate 111 engages through so-called diffusion bond (Transient Liquid Phase Diffusion Bonding) with metallic plate 122,123.So, be cooled to normal temperature after solidifying.
So, produce power module substrate 110.
Becoming as in the power module substrate 110 of this execution mode of above formation and the power model 101, ceramic substrate 111 and circuit layer 112 (metallic plate 122) make Ag that the Ag of the one side that is formed on ceramic substrate 111 burns till layer 124 spread and engage towards metallic plate 122.In addition, ceramic substrate 111 engages towards metallic plate 123 diffusions with the Ag that metal level 113 (metallic plate 123) makes the Ag of the another side that is formed on ceramic substrate 111 burn till layer 125.Therefore, even under than the engaging condition of lower temperature, short time, engage, also can firm engagement ceramic substrate 111 and metallic plate 122,123.
In addition, in the joint interface 130 of the joint interface of ceramic substrate 111 and circuit layer 112 and ceramic substrate 111 and metal level 113, solid solution has Ag in circuit layer 112 and the metal level 113.So; The Ag concentration of 130 sides of joint interface separately of circuit layer 112 and metal level 113 is set at below the above 10 quality % of 0.05 quality %; Thus; The part solution strengthening of joint interface 130 sides of circuit layer 112 and metal level 113 can prevent the generation of the be full of cracks in circuit layer 112 and the metal level 113.
In addition, in this execution mode, ceramic substrate 111 is by Al 2O 3Constitute, be formed with the Ag high concentration portion 132 of concentrated Ag at the joint interface 130 of metallic plate 122,123 that becomes circuit layer 112 and metal level 113 and ceramic substrate 111.And the Ag concentration of this Ag high concentration portion 132 becomes more than 2 times of Ag concentration in circuit layer 112 and the metal level 113, the raising of the Ag atoms at suitable temperatures ceramic substrate that therefore can be through being present near interface and the bond strength of metallic plate.In addition, the thickness of this Ag high concentration portion 132 is below the 4nm, and the stress in the time of therefore suppressing through the load thermal cycle causes in Ag high concentration portion 132, cracking.
And then; The mass ratio of Al in this execution mode during through this joint interface 130 of energy dispersion type x-ray analysis analysis, Ag, O is Al: Ag: O=50～90 quality %: 1～30 quality %: below the 45 quality %, therefore can prevent in joint interface 130 Al and the problem that the product of Ag generates too much and obstruction engages.In addition, can fully play raising effect based on the bond strength of Ag atom.
In addition, in this execution mode, the Ag that burns till Ag pulp layer 124a, 125a is burnt till layer 124,125 as the Ag fixation layer, therefore can be, get involved Ag between 123 effectively at ceramic substrate 111 and metallic plate 122.In addition, burn till even this Ag slurry heats in air atmosphere and also can not make the Ag oxidation, therefore can form Ag with comparalive ease and burn till layer 124,125.
Then, with reference to Figure 12 to Figure 17 the 3rd execution mode of the present invention is described.
Power model 201 shown in Figure 12 possesses and has: power module substrate 210 is equipped with circuit layer 212; Semiconductor chip 3 is engaged in the surface of circuit layer 212 through layer 2; And radiator 240.
Power module substrate 210 possesses and has: ceramic substrate 211; Circuit layer 212 is equipped on the one side (in Figure 12 for upper surface) of this ceramic substrate 211; Reach metal level 213, be equipped on the another side (in Figure 12, being lower surface) of ceramic substrate 211.
Ceramic substrate 211 is by the high Si of insulating properties 3N 4(silicon nitride) constitutes.And the thickness setting of ceramic substrate 211 is set at 0.32mm in this execution mode in the scope of 0.2～1.5mm.
Circuit layer 212 engages first metallic plate 222 with conductivity through the one side at ceramic substrate 211 and forms.
Metal level 213 engages second metallic plate 223 through the another side at ceramic substrate 211 and forms.
In this execution mode, first metallic plate 222 and second metallic plate 223 are that purity is the aluminium milled sheet more than 99.99%.
The radiator 240 of this execution mode possesses and has: top plate portion 241 engages with power module substrate 210; Base plate 245 disposes with this top plate portion 241 relatively; And corrugated fin 246, get involved between top plate portion 241 and base plate 245 and install.The stream 242 that is divided into the coolant that circulates through top plate portion 241, base plate 245 and corrugated fin 246.
This radiator 240 is formed by soldering respectively with base plate 245 through top plate portion 241 and corrugated fin 246, corrugated fin 246.In this execution mode; Shown in figure 17; Top plate portion 241 and base plate 245 are made up of laminated aluminium plate; This laminated aluminium plate laminate substrate layer 241A, 245A and be lower than knitting layer 241B, the 245B that the material of substrate layer 241A, 245A constitutes by fusing point and form set top plate portion 241 and base plate 245 with knitting layer 241B, 245B towards the mode of corrugated fin 246 sides.
In this execution mode, substrate layer 241A, 245A are made up of the A3003 alloy, and knitting layer 241B, 245B are made up of the A4045 alloy.
Shown in figure 13, at the joint interface 230 of ceramic substrate 211 with circuit layer 212 (metallic plate 222) and metal level 213 (metallic plate 223), solid solution has Ag in circuit layer 212 (metallic plate 222) and the metal level 213 (metallic plate 223).
Specifically, be formed with Ag concentration in the vicinity of the joint interface 230 of circuit layer 212 and metal level 213 along with leaving and the concentration dipping bed 233 that reduces gradually to laminating direction from joint interface 230.At this, near the Ag concentration the joint interface 230 of circuit layer 212 and metal level 213 is set in below the above 10 quality % of 0.05 quality %.
Near the joint interface 230 of circuit layer 212 and metal level 213 Ag concentration is to analyze (spot diameter 30 μ m) at the mean value that carries out 5 mensuration apart from 50 μ m positions of joint interface 230 through EPMA.The chart of Figure 13 be middle body at circuit layer 212 (metallic plate 222) and metal level 213 (metallic plate 223) in the enterprising line linearity analysis of laminating direction, and the chart that the concentration of said 50 μ m positions is obtained as benchmark.
When in transmission electron microscope, observing the joint interface 230 of ceramic substrate 211 and circuit layer 212 (metallic plate 222) and metal level 213 (metallic plate 223), shown in figure 14, be formed with the Ag high concentration portion 232 that concentrates Ag at joint interface 230.In this Ag high concentration portion 232, Ag concentration is more than 2 times of Ag concentration in circuit layer 212 (metallic plate 222) and the metal level 213 (metallic plate 223).In addition, the thickness H of this Ag high concentration portion 232 is below the 4nm.
And then in this Ag high concentration portion 232, oxygen concentration is higher than the oxygen concentration in the ceramic substrate 211.
In addition; Shown in figure 14; In the joint interface 230 of this observation, the central authorities between the joint interface side end of the lattice image of the interface side end of the lattice image of circuit layer 212 (metallic plate 222) and metal level 213 (metallic plate 223) and ceramic substrate 211 are made as datum level S.And; Ag concentration in circuit layer 212 (metallic plate 222) and the metal level 213 (metallic plate 223) is meant, apart from the Ag concentration of the part of joint interface 230 certain distances in circuit layer 212 (metallic plate 222) and the metal level 213 (metallic plate 223) (being more than the 5nm in this execution mode).
And the oxygen concentration in the ceramic substrate 211 is meant, apart from the intragranular oxygen concentration of the part of 230 certain distances of the joint interface in the ceramic substrate 211 (being more than the 5nm in this execution mode).
And, be Al: Si: Ag: O: N=15～45 quality % through the mass ratio of the Al of energy dispersion type x-ray analysis (EDS) when analyzing this joint interface 230, Si, Ag, O, N: 15～45 quality %: 1～30 quality %: 1～10 quality %: below the 25 quality %.Spot diameter when carrying out the analysis based on EDS is 1～4nm.Measure joint interface 230 at a plurality of points (for example being 20 points) in this execution mode, calculate its mean value.And; Not with the joint interface 230 of the crystal boundary of the metallic plate 222,223 of forming circuit layer 212 and metal level 213 and ceramic substrate 211 as determination object, only with the joint interface 230 of the crystal grain of the metallic plate 222,223 of forming circuit layer 212 and metal level 213 and ceramic substrate 211 as determination object.
Below, with reference to Figure 15 and Figure 17 the manufacturing approach of the power module substrate of the band radiator of above-mentioned formation is described.
(Ag slurry painting process S201)
At first, shown in figure 16, be coated with the Ag slurry through spray gun or ink jet printing at the one side and the another side of ceramic substrate 211, form Ag pulp layer 224a, 225a.Be about 0.02～200 μ m after the thickness drying of Ag pulp layer 224a, 225a.
Contain Ag powder, solvent and dispersant at the Ag of this use slurry.The content of Ag powder is that remainder is solvent and dispersant below the above 90 quality % of 60 whole quality % of Ag slurry.In this execution mode, the content of Ag powder is made as 85 whole quality % of Ag slurry.
In this execution mode, the viscosity of Ag slurry is adjusted into below the above 500Pas of 10Pas, more preferably is adjusted into below the above 300Pas of 50Pas.
The particle diameter of Ag powder is that using average grain diameter in this execution mode is the Ag powder of 0.03 μ m below the above 0.04 μ m of 0.02 μ m.
It is the solvent more than 200 ℃ that solvent is fit to boiling point.For example can use α-terpineol, acetate of butyl carbitol, diethylene glycol dibutyl ether etc.In this execution mode, use diethylene glycol dibutyl ether.
In addition, add the dispersant of omega-dicarboxylic acids in this execution mode.And, also can not add dispersant and constitute the Ag slurry.
(Ag slurry firing process S202)
Then, the ceramic substrate 211 that will be formed with Ag pulp layer 224a, 225a is heated to 150～200 ℃ under air atmosphere, forms Ag and burns till layer 224,225.In this execution mode, this Ag burns till layer 224,225 and forms the Ag fixation layer.
(lamination S203)
Then, metallic plate 222 is laminated to the one side side of ceramic substrate 211.And, metallic plate 223 is laminated to the another side side of ceramic substrate 211.
(heating process S204)
Then, (pressure is 1～35kgf/cm in the laminating direction pressurization with metallic plate 222, ceramic substrate 211 and metallic plate 223 2) state under pack into and heat in the vacuum furnace.Like this, the Ag that burns till layer 224,225 through Ag forms the motlten metal zone towards metallic plate 222,223 diffusions at the interface of metallic plate 222,223 and ceramic substrate 211.
At this, in this execution mode, the pressure in the vacuum furnace is set in 10 -6Pa above 10 -3Below the Pa, heating-up temperature is set in more than 600 ℃ below 650 ℃.
(solidifying operation S205)
Then, under the state in motlten metal zone temperature is remained constantly being formed with, the Ag in the motlten metal zone is to metallic plate 222,223 diffusions.Thus, once the Ag concentration for the regional part of motlten metal reduced gradually, and fusing point rises, and remains under the constant state in temperature and solidifies.That is, ceramic substrate 211 engages through so-called diffusion bond (Transient Liquid Phase Diffusion Bonding) with metallic plate 222,223.So, be cooled to normal temperature after solidifying.
So, produce power module substrate 210.
(radiator lamination operation S206)
Then, in the another side side of the metal level 213 of power module substrate 210, laminate top board 241, corrugated fin 246 and base plate 245.At this moment, between metal level 213 and top plate portion 241, get involved Ag fixation layer 226.In this execution mode, Ag fixation layer 226 is formed on the another side of metal level 213 through sputter, plating and screen painting Ag slurry.
In addition, with the knitting layer 245B of the knitting layer 241B of top plate portion 241 and base plate 245 mode laminate top board 241 and base plate 245 towards corrugated fin 246 sides.
(radiators heat operation S207)
Then, on laminating direction to the (pressure 1～35kgf/cm that pressurizeed by the power module substrate 210 of lamination, top plate portion 241, corrugated fin 246 and base plate 245 2) state under, be encased in the atmosphere heating furnace and heat.Ag through Ag fixation layer 226 spreads towards metal level 213 and top plate portion 241, between the top plate portion 241 of metal level 213 and radiator 240, forms the motlten metal zone.Simultaneously, form the motlten metal zone through fusion knitting layer 241B, 245B between top plate portion 241 and corrugated fin 246, base plate 245 and the corrugated fin 246.
At this, in this execution mode, be nitrogen atmosphere in the atmosphere heating furnace, heating-up temperature is set at more than 550 ℃ in the scope below 630 ℃.
(motlten metal solidifies operation S208)
Through cooling off, be formed on the motlten metal zone freezing between the top plate portion 241 of metal level 213 and radiator 240, jointing metal layer 213 and top plate portion 241.In addition, be formed on the motlten metal zone freezing between top plate portion 241 and corrugated fin 246, base plate 245 and the corrugated fin 246, engage top plate portion 241 and corrugated fin 246, base plate 245 and corrugated fin 246.
Thus, top plate portion 241, corrugated fin 246 and base plate 245 are formed radiator 240 by soldering.Engage this radiator 240 and make the power module substrate of being with radiator with power module substrate 210.
Becoming as in the power module substrate 210 of this execution mode of above formation and the power model 201; Ceramic substrate 211 and circuit layer 212 (metallic plate 222) and metal level 213 (metallic plate 223) make Ag that the Ag of the one side that is formed on ceramic substrate 211 and another side burns till layer 224,225 towards metallic plate 222,223 diffusions and engage; Therefore even under engaging condition than lower temperature, short time, also can firm engagement ceramic substrate 211 and metallic plate 222,223.
In addition, in this execution mode, on the joint interface 230 of metallic plate 222,223 that becomes circuit layer 212 and metal level 213 and ceramic substrate 211, be formed with the Ag high concentration portion 232 that concentrates Ag.And the Ag concentration of this Ag high concentration portion 232 becomes more than 2 times of Ag concentration in circuit layer 212 and the metal level 213.Therefore, the Ag atoms at suitable temperatures ceramic substrate 211 that can be through being present near interface and the raising of the bond strength of metallic plate 222,223.In addition, the thickness of this Ag high concentration portion 232 is below the 4nm, and the stress in the time of therefore can suppressing through the load thermal cycle causes in Ag high concentration portion 232, cracking.
And then; The mass ratio of Al when analyzing joint interface 230 through the energy dispersion type x-ray analysis in this execution mode, Si, Ag, O, N is Al: Si: Ag: O: N=15～45 quality %: 15～45 quality %: 1～30 quality %: 1～10 quality %: below the 25 quality %, therefore can prevent in joint interface 230 Al and the problem that the product of Ag generates too much and obstruction engages.In addition, can fully play raising effect based on the bond strength of Ag atom.And, prevent to exist in the joint interface 230 the high part of thick oxygen concentration, the generation of the crackle in the time of can suppressing to load thermal cycle.
In addition, in this execution mode, the Ag that burns till Ag pulp layer 224a, 225a is burnt till layer 224,225 as the Ag fixation layer, therefore can be, get involved Ag between 223 effectively at ceramic substrate 211 and metallic plate 222.In addition, burn till even this Ag slurry heats in air atmosphere and also can not make the Ag oxidation, therefore can form Ag with comparalive ease and burn till layer 224,225.
And; In this execution mode; The use particle diameter is the Ag particle below the above 0.04 μ m of 0.02 μ m, and uses the Ag slurry that does not contain resin, therefore can under the low temperature about 200 ℃, burn till formation Ag to Ag pulp layer 224a, 225a and burn till layer 224,225.
Then, with reference to Figure 18 to Figure 22 the 4th execution mode of the present invention is described.
Power model 301 shown in Figure 180 possesses and has: power module substrate 310 is equipped with circuit layer 312; Semiconductor chip 3 is engaged in the surface of circuit layer 312 through layer 2; And radiator 340.
Power module substrate 310 possesses and has: ceramic substrate 311; Circuit layer 312 is equipped on the one side (in Figure 18 for upper surface) of this ceramic substrate 311; Reach metal level 313, be equipped on the another side (in Figure 18, being lower surface) of ceramic substrate 311.
Ceramic substrate 311 is made up of the high AlN of insulating properties (aluminium nitride).And the thickness setting of ceramic substrate 311 is set at 0.635mm in this execution mode in the scope of 0.2～1.5mm.
Circuit layer 312 engages first metallic plate 322 with conductivity through the one side at ceramic substrate 311 and forms.
Metal level 313 engages second metallic plate 323 through the another side at ceramic substrate 311 and forms.
In this execution mode, first metallic plate 322 and second metallic plate 323 are that purity is the aluminium milled sheet more than 99.99%.
Radiator 340 is used to cool off said power module substrate 310.This radiator 340 possesses and has: top plate portion 341 engages with power module substrate 310; And stream 342, be used to make coolant (for example cooling water) circulation.The top plate portion 341 of radiator 340 preferably is made up of the good material of heat conductivity, in this execution mode, is made up of A6063 (aluminium alloy).
And in the joint interface 330 of second metallic plate 323 (metal level 313) and radiator 340, solid solution has Ag in metal level 313 (second metallic plate 323) and radiator 340.
Specifically, shown in figure 19, be formed with Ag concentration in the vicinity of metal level 313 and the joint interface 330 of radiator 340 along with leaving and the concentration dipping bed 333,334 that reduces gradually to laminating direction from joint interface 330.At this, metal level 313 is set in below the above 10 quality % of 0.05 quality % with near the joint interface 330 Ag concentration of radiator 340.
Metal level 313 is to analyze (spot diameter 30 μ m) at the mean value that carries out 5 mensuration apart from 50 μ m positions of joint interface 330 through EPMA with near the joint interface 330 Ag concentration of radiator 340.And, the chart of Figure 19 be width middle body at metal level 313 (metallic plate 323) and radiator 340 (top plate portion 341) in the enterprising line linearity analysis of laminating direction, and the chart that the concentration of said 50 μ m positions is obtained as benchmark.
Below, with reference to Figure 20 to Figure 22 the manufacturing approach of the power module substrate of the band radiator of above-mentioned formation is described.
(the Ag layer forms operation S301/ set operation S311)
At first, shown in figure 21, form an Ag layer 324 through the one side set Ag that sputters at first metallic plate 322 that forms circuit layer 312.One side set Ag through sputtering at second metallic plate 323 that forms metal level 313 forms the 2nd Ag layer 325 (set operation S311).
And then, form Ag layer 326 (the Ag layer forms operation S301) through the another side set Ag that sputters at second metallic plate 323 that forms metal level 313.
At this, in this execution mode, the Ag amount in an Ag layer 324, the 2nd Ag layer 325 and the Ag layer 326 is set at 0.01mg/cm 2Above 10mg/cm 2Below.
(radiator lamination operation S302/ ceramic substrate lamination operation S312)
Then, shown in figure 21, at one side side lamination first metallic plate 322 of ceramic substrate 311.In addition, at another side side lamination second metallic plate 323 (ceramic substrate lamination operation S312) of ceramic substrate 311.At this moment, shown in figure 21, with the face that is formed with an Ag layer 324 of first metallic plate 322, mode lamination first metallic plate 322 and second metallic plate 323 that are formed with the 2nd Ag layer 325 of second metallic plate 323 towards ceramic substrate 311.
And then, in the another side side of second metallic plate 323, lamination radiator 340 (radiator lamination operation S302).At this moment, shown in figure 21, with mode lamination second metallic plate 323 and radiator 340 that is formed with Ag layer 326 of second metallic plate 323 towards radiator 340.
That is, an Ag layer 324 is got involved between first metallic plate 322 and ceramic substrate 311, the 2nd Ag layer 325 is got involved between second metallic plate 323 and ceramic substrate 311, Ag layer 326 is got involved between second metallic plate 323 and radiator 340.
(radiators heat operation S303/ ceramic substrate heating process S313)
Then, on laminating direction to first metallic plate 322, ceramic substrate 311, second metallic plate 323 and the radiator 340 (pressure 1～35kgf/cm that pressurizes 2) state under pack into and heat in the vacuum furnace.Ag through an Ag layer 324 spreads towards first metallic plate 322, forms first motlten metal zone 327 at the interface of first metallic plate 322 and ceramic substrate 311.Ag through the 2nd Ag layer 325 spreads towards second metallic plate 323, forms second motlten metal zone 328 at the interface of second metallic plate 323 and ceramic substrate 311.(ceramic substrate heating process S313)
In addition, between second metallic plate 323 and radiator 340, form motlten metal zone 329 (radiators heat operation S303) simultaneously.Shown in figure 22, the Ag of Ag layer 326 is passed through towards second metallic plate 323 and radiator 340 diffusions in motlten metal zone 329, and near Ag concentration rising the Ag layer 326 of second metallic plate 323 and radiator 340 and fusing point reduce and form.
In this execution mode, the pressure in the vacuum furnace is set at 10 -6Pa above 10 -3Below the Pa, heating-up temperature is set at more than 600 ℃ below 650 ℃.
(motlten metal solidifies operation S304/ first motlten metal and second motlten metal solidifies operation S314)
Then, under the state that is formed with motlten metal zone 329, temperature is remained necessarily.Like this, the Ag in the motlten metal zone 329 is further towards second metallic plate 323 and radiator 340 diffusions.Thus, once the Ag concentration for the part in motlten metal zone 329 reduced gradually, and fusing point rises, and solidified in that temperature is remained under certain state.That is, radiator 340 engages through so-called diffusion bond (Transient Liquid Phase Diffusion Bonding) with second metallic plate 323.
Likewise, the Ag in first motlten metal zone 327 is further towards 322 diffusions of first metallic plate.In addition, the Ag in second motlten metal zone 328 is further towards 323 diffusions of second metallic plate.Like this, once be that the Ag concentration of the part in 327, second motlten metal zone, first motlten metal zone 328 reduces gradually, fusing point rises, and temperature is remained under certain state solidify.Thus, engage ceramic substrate 311 and first metallic plate 322, ceramic substrate 311 and second metallic plate 323.That is, ceramic substrate 311 engages through so-called diffusion bond (Transient Liquid Phase Diffusion Bonding) with first metallic plate 322 and second metallic plate 323.After so solidifying, be cooled to normal temperature.
As stated, engage first metallic plate 322 and ceramic substrate 311 that forms circuit layer 312.Engage second metallic plate 323 and ceramic substrate 311 that forms metal level 313.Engage second metallic plate 323 and radiator 340.Thus, make the power module substrate of the band radiator of this execution mode.
In this execution mode that constitutes as stated, in the joint interface 330 of second metallic plate 323 and radiator 340, getting involved has Ag.This Ag is the element of the fusing point of reduction Al, therefore can under the lower temperature condition, form motlten metal zone 329 at the interface of the radiator 340 and second metallic plate 323.Thus, even under than the engaging condition of lower temperature, short time, engage, also can engage the radiator 340 and second metallic plate 323 securely.
And; This execution mode also has Ag to get involved at joint interface, second metallic plate 323 of first metallic plate 322 and ceramic substrate 311 with the joint interface of ceramic substrate 311, therefore can engage ceramic substrate 311 and first metallic plate 322, ceramic substrate 311 and second metallic plate 323 securely.
And then; 340 diffusions engage radiator 340 and second metallic plate 323 (metal level 313) to the Ag of the Ag layer 326 through making the composition surface that is formed on second metallic plate 323 with radiator towards second metallic plate 323; Therefore under the engaging condition of lower temperature, short time, engage, also can engage the radiator 340 and second metallic plate 323 securely.
And; In this execution mode; Ag layer 324 through making the composition surface that is formed on first metallic plate 322, second metallic plate 323, the Ag of the 2nd Ag layer 325 engage ceramic substrate 311 and first metallic plate 322 (circuit layer 312) and second metallic plate 323 (metal level 313) towards first metallic plate 322,323 diffusions of second metallic plate; Even therefore under the engaging condition of lower temperature, short time, engage, also can engage ceramic substrate 311 and first metallic plate 322 (circuit layer 312) and second metallic plate 323 (metal level 313) securely.
And then, radiator 340 and second metallic plate 323 engage and the engaging of ceramic substrate 311 and first metallic plate 322 and second metallic plate 323 in do not use the solder paper tinsel, therefore need not to carry out the solder paper tinsel to bit manipulation etc.Therefore, can make the power module substrate of the band radiator of this execution mode well with low-cost efficient.
And, in this execution mode, carry out engaging of ceramic substrate 311 and first metallic plate 322 and second metallic plate 323 and engaging of second metallic plate 323 and radiator 340 simultaneously, therefore can significantly cut down their the required cost of joint.And, to ceramic substrate 311 need not to carry out repeated heating, therefore cooling is accomplished, and can realize the minimizing of warpage of the power module substrate of this band radiator.
And then the Ag layer forms among the operation S301, forms Ag layer 326 through the composition surface set Ag that sputters at second metallic plate 323, therefore can between the radiator 340 and second metallic plate 323, get involved Ag effectively.And, can precision adjust the set amount of Ag well, form motlten metal zone 329 effectively, can engage the radiator 340 and second metallic plate 323 securely.
And; In the power module substrate of the band radiator of this execution mode; In the joint interface 330 of radiator 340 and second metallic plate 323 (metal level 313); Second metallic plate 323 (metal level 313) and radiator 340 solid solutions have Ag, and the Ag concentration of 330 sides of joint interface separately of second metallic plate 323 (metal level 313) and radiator 340 is set at below the above 10 quality % of 0.05 quality %.Thus, the part solution strengthening of joint interface 330 sides of second metallic plate 323 (metal level 313) and radiator 340 can prevent the generation of the be full of cracks in second metallic plate 323 (metal level 313) and the radiator 340.The power module substrate of the high band radiator of reliability can be provided thus.
Then, use Figure 23 to Figure 26 that the 5th execution mode of the present invention is described.
This power model 401 possesses and has: power module substrate 410 is equipped with circuit layer 412; Semiconductor chip 3 is engaged in the surface of circuit layer 412 through layer 2; And radiator 440.
Power module substrate 410 possesses and has: ceramic substrate 411; Circuit layer 412 is equipped on the one side (in Figure 23 for upper surface) of this ceramic substrate 411; Reach metal level 413, be equipped on the another side (in Figure 23, being lower surface) of ceramic substrate 411.And ceramic substrate 411 is made up of the high AlN of insulating properties (aluminium nitride).
Circuit layer 412 is through being that first metallic plate 422 that aluminium (the so-called 4N aluminium) milled sheet more than 99.99% forms engages with ceramic substrate 411 and forms by purity.
Metal level 413 is through being that second metallic plate 423 that aluminium (the so-called 4N aluminium) milled sheet more than 99.99% forms engages with ceramic substrate 411 and forms by purity.
Radiator 440 is used to cool off above-mentioned power module substrate 410.Radiator 440 possesses and has: top plate portion 441 engages with power module substrate 410; Base plate 445 disposes with this top plate portion 441 relatively; And corrugated fin 446, get involved between top plate portion 441 and base plate 445 and install.The stream 442 that is divided into the coolant that circulates through top plate portion 441, base plate 445 and corrugated fin 446.
This radiator 440 is formed by soldering respectively with base plate 445 through top plate portion 441 and corrugated fin 446, corrugated fin 446.In this execution mode, shown in figure 26, base plate 445 is made up of laminated aluminium plate, this laminated aluminium plate laminate substrate layer 445A and be lower than the knitting layer 445B that the material of substrate layer 445A constitutes by fusing point and form.And in this execution mode, substrate layer 445A is made up of the A3003 alloy, and knitting layer 445B is made up of the A4045 alloy.
And at the top plate portion 441 of radiator 440 and the joint interface of second metallic plate 423 (metal level 413), solid solution has Ag in second metallic plate 423 (metal level 413) and the top plate portion 441.
In addition, the joint interface of first metallic plate 422 (circuit layer 412) and ceramic substrate 411, and the joint interface of first metallic plate 423 (metal level 413) and ceramic substrate 411 in solid solution Ag is arranged.
Below, the manufacturing approach of the power module substrate of the band radiator of above-mentioned formation is described.
(fixation layer forms operation S401)
At first, shown in figure 25, form an Ag layer 424 through the one side set Ag that sputters at first metallic plate 422 that forms circuit layer 412.And, form the 2nd Ag layer 425 through the one side set Ag that sputters at second metallic plate 423 that forms metal level 413.And then, form Ag layer 426 at the another side of second metallic plate 423 through sputter set Ag.
At this, in this execution mode, the Ag amount in an Ag layer 424, the 2nd Ag layer 425, the Ag layer 426 is set at 0.01mg/cm 2Above 10mg/cm 2Below.
(lamination S402)
Then, at one side side lamination first metallic plate 422 of ceramic substrate 411.Another side side lamination second metallic plate 423 at ceramic substrate 411.At this moment, shown in figure 25, with the face that is formed with an Ag layer 424 of first metallic plate 422, mode lamination first metallic plate 422 and second metallic plate 423 that are formed with the 2nd Ag layer 425 of second metallic plate 423 towards ceramic base 411.
And then, at the face side lamination configuration top plate portion 441 that is formed with Ag layer 426 of second metallic plate 423.
(heating process S403)
Then, on laminating direction to first metallic plate 422, ceramic substrate 411, second metallic plate 423 and the top plate portion 441 (pressure 1～35kgf/cm that pressurizes 2) state under pack into and heat in the vacuum furnace.Ag through an Ag layer 424 spreads towards first metallic plate 422, forms first motlten metal zone 427 at the interface of first metallic plate 422 and ceramic substrate 411.And the Ag through the 2nd Ag layer 425 is towards 423 diffusions of second metallic plate, forms second motlten metal zone 428 at the interface of second metallic plate 423 and ceramic substrate 411.And then the Ag through Ag layer 426 forms motlten metal regional 429 towards second metallic plate 423 and top plate portion 441 diffusions between second metallic plate 423 and top plate portion 441.
At this, in this execution mode, the pressure in the vacuum furnace is set at 10 -6Pa above 10 -3Below the Pa, heating-up temperature is set at more than 600 ℃ below 650 ℃.
(motlten metal solidifies operation S404)
Then, under the state that is formed with 427, second motlten metal zone, first motlten metal zone 428, temperature is remained necessarily.Ag in first motlten metal zone 427 is towards 422 diffusions of first metallic plate.Ag in second motlten metal zone 428 is towards 423 diffusions of second metallic plate.Once the Ag concentration that was the part in 427, second motlten metal zone, first motlten metal zone 428 reduces gradually, and fusing point rises, and temperature is remained under certain state solidify.Thus, engage ceramic substrate 411 and first metallic plate 422 and second metallic plate 423.
And, under the state that is formed with motlten metal zone 429, temperature is remained necessarily.Ag in the motlten metal zone 429 is towards second metallic plate 423 and top plate portion 441 diffusions.Once the Ag concentration that was the part in motlten metal zone 429 reduces gradually, and fusing point rises, and temperature is remained under certain state solidify.Thus, engage second metallic plate 423 and top plate portion 441.
(fin lamination S405)
Then, shown in figure 26, in another side side lamination solder paper tinsel 447 (for example, low melting point alloy foil such as Al-10%Si Alloy Foil), corrugated fin 446 and the base plate 445 of top plate portion 441.At this moment, with the knitting layer 445B of base plate 445 mode lamination base plate 445 towards corrugated fin 446 sides.And, get involved for example KAlF between top plate portion 441 and corrugated fin 446, base plate 445 and the corrugated fin 446 4Solder flux (not shown) for main component.
(soldering operation S406)
Then, on laminating direction to top plate portion 441, corrugated fin 446 and the base plate 445 (pressure 1～35kgf/cm that pressurizes 2) state under, heat in the atmosphere of packing into the heating furnace.So, between top plate portion 441 and corrugated fin 446, form the melting metal layer that 447 fusions of solder paper tinsel are formed.In addition, between base plate 445 and corrugated fin 446, form the melting metal layer that knitting layer 445B fusion is formed.
At this, in this execution mode, be nitrogen atmosphere in the gas heating stove, heating-up temperature is set at more than 550 ℃ in the scope below 630 ℃.
Through cooling, the melting metal layer that is formed between top plate portion 441 and the corrugated fin 446 is solidified, top plate portion 441 and corrugated fin 446 are carried out soldering.In addition, the melting metal layer that is formed between base plate 445 and the corrugated fin 446 is solidified, base plate 445 and corrugated fin 446 are carried out soldering.At this moment, the surface of top plate portion 441, corrugated fin 446, base plate 445 is formed with oxide film thereon, but removes this oxide film thereon through above-mentioned solder flux.
Thus, make the power module substrate of the band radiator of this execution mode.
In the manufacturing approach of the power module substrate of the power module substrate of the band radiator of this execution mode that constitutes as stated, band radiator; Set Ag between the top plate portion 441 of radiator 440 and second metallic plate 423 (metal level 413); Therefore can be through spreading the top plate portion 441 and power module substrate 410 that these Ag engage radiator 440 towards the top plate portion 441 and second metallic plate 423; Even therefore under the lower temperature condition, also can engage the top plate portion 441 and power module substrate 410 of radiator 440 effectively.
Below, with reference to Fig. 1 and Figure 27 the 6th execution mode of the present invention is described.
Except the interpolation element difference that is solid-solubilized in circuit layer 12 (metallic plate 22) and metal level 13 (metallic plate 23), the power model of the 6th execution mode is identical with first execution mode.Therefore, omit the explanation of common ground, use Fig. 1 and symbol thereof that difference is described.
The power model 1 of the 6th execution mode, in Fig. 1, it is the Zn that is selected from the scope below the above 5 quality % of 0.01 quality % that circuit layer 12 (metallic plate 22) has total concentration with the middle solid solution of metal level 13 (metallic plate 23); Ge; Mg, Ca, the interpolation element of one or more among Ga and the Li.
Near the joint interface 30 of circuit layer 12 and metal level 13, be formed with on laminating direction and add the concentration dipping bed 33 that concentration of element reduces gradually along with leaving from joint interface 30.At this, in this execution mode, use Ge as adding element, near the Ge concentration the joint interface 30 of circuit layer 12 and metal level 13 is set at below the above 5 quality % of 0.01 quality %.The CONCENTRATION DISTRIBUTION of the interpolation element (Ge) of circuit layer shown in Figure 27 12 and metal level 13.
In addition, in this joint interface 30, observe the interpolation element high concentration portion that adds element (Ge) that concentrates.
Add in the element high concentration portion at this, adding concentration of element (Ge concentration) is more than 2 times of interpolation concentration of element (Ge concentration) in circuit layer 12 (metallic plate 22) and the metal level 13 (metallic plate 23).And the thickness H of this interpolation element high concentration portion is below the 4nm.
And then in adding element high concentration portion, oxygen concentration is higher than the oxygen concentration in the ceramic substrate 11.
At this, it is identical with Ag concentration in first execution mode to add the definition of concentration of element (Ge concentration), oxygen concentration also with first execution mode in definition identical.
Through the Al of energy dispersion type x-ray analysis (EDS) when analyzing this joint interface 30, the mass ratio that adds element (Ge), O, N is Al: add element (Ge): O: N=50～90 quality %: 1～30 quality %: 1～10 quality %: in the scope below the 25 quality %.In addition, the analysis condition based on EDS is identical with first execution mode.
This power module substrate 1 is through the method manufacturing identical with first execution mode.Just in the set operation, on the composition surface separately of metallic plate 22,23 through sputter set 0.01mg/cm 2Above 10mg/cm 2Following interpolation element (Ge).
In this execution mode that constitutes as stated, therefore Ge can form the motlten metal zone at the interface of metallic plate 22,23 and ceramic substrate 11 for reducing the element of aluminium fusing point under the lower temperature condition.
And then, even under the engaging condition of lower temperature, short time, engage ceramic substrate 11 and circuit layer 12 (metallic plate 22) and metal level 13 (metallic plate 23), also can engage ceramic substrate 11 and metallic plate 22,23 securely.
In addition, in the joint interface 30 of ceramic substrate 11 and circuit layer 12 (metallic plate 22) and metal level 13 (metallic plate 23),, can prevent the generation of the be full of cracks in circuit layer 12 (metallic plate 22) and the metal level 13 (metallic plate 23) through the Ge solution strengthening.
In addition; In this execution mode; The joint interface 30 at metallic plate 22,23 and ceramic substrate 11 that becomes circuit layer 12 and metal level 13 is formed with the interpolation element high concentration portion that adds element (Ge) that concentrates, and therefore can realize the raising of the bond strength of ceramic substrate 11 and metallic plate 22,23.In addition, the thickness of this interpolation element high concentration portion is below the 4nm, and the stress in the time of therefore suppressing through the load thermal cycle causes in adding element high concentration portion, cracking.
And then, in this execution mode, the Al of joint interface 30: add element (Ge): O: N=50～90 quality %: 1～30 quality %: 1～10 quality %: below the 25 quality %, therefore can prevent to add element and have the problem that engages that too much hinders.Can fully play raising effect based on the bond strength that adds element atom (Ge atom).And, prevent to exist in the joint interface 30 the high part of thick oxygen concentration, the generation of the crackle in the time of can suppressing to load thermal cycle.
And, owing to form the motlten metal zone, need not to use the solder paper tinsel of Al-Si system at the interface of ceramic substrate 11 and metallic plate 22,23, can make the power module substrate 10 of bonding metal plates 22,23 and ceramic substrate 11 effectively with low cost.
In addition, in this execution mode, because the Ge amount is 0.01mg/cm 2More than, therefore can form the motlten metal zone effectively at the interface of ceramic substrate 11 and metallic plate 22,23.
And then, because the Ge amount is 10mg/cm 2Below, therefore can prevent to add element (Ge) and too much make the intensity of metallic plate 22,23 of near interface become too high towards metallic plate 22,23 diffusions.Thus, during the cold cycling of loading in the power module substrate 10, thermal stress can be absorbed by circuit layer 12, metal level 13, can prevent the fracture of ceramic substrate 11 etc.
And, need not positioning work of carrying out by the solder paper tinsel etc., can effectively produce this power module substrate 10.
And, owing to be formed with fixation layer 24,25, get involved thus in the oxide film thereon at the interface of metallic plate 22,23 and ceramic substrate 11 and only be present in the surface of metallic plate 22,23, so can improve the qualification rate of initial engagement on the composition surface of metallic plate 22,23.
Below, with reference to Fig. 7 and Figure 28 the 7th execution mode of the present invention is described.
Except the interpolation element difference that is solid-solubilized in circuit layer 112 (metallic plate 122) and metal level 113 (metallic plate 123), the power model of the 7th execution mode is identical with second execution mode.Therefore, omit the explanation of common ground, use Fig. 7 and symbol thereof that difference is described.
The power model 101 of the 7th execution mode; In Fig. 7, solid solution has that to amount to concentration be one or more the interpolation element among Ag, Zn, Ge, Mg, Ca, Ga and the Li that is selected from the scope below the above 5 quality % of 0.01 quality % in circuit layer 112 (metallic plate 122) and the metal level 113 (metallic plate 123).
Specifically, near the joint interface 130 of circuit layer 112 and metal level 113, be formed with on laminating direction and add the concentration dipping bed 133 that concentration of element reduces gradually along with leaving from joint interface 130.
At this, in this execution mode, use Mg as adding element, near the Mg concentration the joint interface 130 of circuit layer 112 and metal level 113 is set at below the above 5 quality % of 0.01 quality %.The CONCENTRATION DISTRIBUTION of the interpolation element (Mg) of circuit layer shown in Figure 28 112 and metal level 113.
In addition, in joint interface 130, observe the interpolation element high concentration portion that adds element (Mg) that concentrates.Add in the element high concentration portion at this, adding concentration of element (Mg concentration) is more than 2 times of interpolation concentration of element (Mg concentration) in circuit layer 112 (metallic plate 122) and the metal level 113 (metallic plate 123).And the thickness H of this interpolation element high concentration portion is below the 4nm.
In addition, be Al through the Al of energy dispersion type x-ray analysis (EDS) when analyzing this joint interface 130, the mass ratio that adds element (Mg), O: add element (Mg): O=50～90 quality %: 1～30 quality %: in the scope below the 45 quality %.In addition, the analysis condition based on EDS is identical with second execution mode.
This power module substrate is through the method manufacturing identical with second execution mode.Just replace Ag slurry painting process, at the one side of ceramic substrate 111 and another side through vapor deposition set 0.01mg/cm 2Above 10mg/cm 2Following interpolation element (Mg).And the heating-up temperature in the heating process is more than 600 ℃ below 650 ℃.
In this execution mode that constitutes as stated; The one side through anchoring at ceramic substrate 111 and the Mg of another side engage towards metallic plate 122,123 diffusions, even therefore under the engaging condition of lower temperature, short time, also can engage ceramic substrate 111 and metallic plate 122,123 securely.
In addition, Mg solution strengthening in the joint interface 130 of ceramic substrate 111 and circuit layer 112 and metal level 113 can prevent the generation of the be full of cracks in circuit layer 112 and the metal level 113.
In addition, in this execution mode, be formed with the interpolation element high concentration portion that adds element (Mg) that concentrates, therefore can realize the raising of the bond strength of ceramic substrate 111 and metallic plate 122,123 through the interpolation element atom (Mg atom) that is present near interface.In addition, the thickness of this interpolation element high concentration portion is below the 4nm, and the stress in the time of therefore suppressing through the load thermal cycle causes in adding element high concentration portion, cracking.
And then; In this execution mode; The Al of joint interface 130: add element (Mg): O=50～90 quality %: 1～30 quality %: below the 45 quality %, can prevent that therefore Al generates the problem that engages that too much hinders with the product of adding element (Mg) in joint interface 130.In addition, can fully play raising effect based on the bond strength that adds element atom (Mg atom).
Below, with reference to Figure 12 and Figure 29 the 8th execution mode of the present invention is described.
Except the interpolation element difference that is solid-solubilized in circuit layer 212 (metallic plate 222) and metal level 213 (metallic plate 223), the power model of the 8th execution mode is identical with the 3rd execution mode.Therefore, omit the explanation of common ground, use Figure 12 and symbol thereof that difference is described.
The power model 201 of the 8th execution mode; In Figure 12, solid solution has that to amount to concentration be one or more the interpolation element among Zn, Ge, Mg, Ca, Ga and the Li that is selected from the scope below the above 5 quality % of 0.01 quality % in circuit layer 212 (metallic plate 222) and the metal level 213 (metallic plate 223).
Specifically, near the joint interface 230 of circuit layer 212 and metal level 213, be formed with on laminating direction and add the concentration dipping bed 233 that concentration of element reduces gradually along with leaving from joint interface 230.
In this execution mode, use Zn as adding element, near the Zn concentration the joint interface 230 of circuit layer 212 and metal level 213 is set at below the above 5 quality % of 0.01 quality %.The CONCENTRATION DISTRIBUTION of the interpolation element (Zn) of circuit layer shown in Figure 29 212 and metal level 213.
In addition, in joint interface 230, observe the interpolation element high concentration portion that adds element (Zn) that concentrates.Add in the element high concentration portion at this, adding concentration of element (Zn concentration) is more than 2 times of interpolation concentration of element (Zn concentration) in circuit layer 212 (metallic plate 222) and the metal level 213 (metallic plate 223).The thickness H of this interpolation element high concentration portion is below the 4nm.
The oxygen concentration of this interpolation element high concentration portion is higher than the oxygen concentration in the ceramic substrate 211.
At this, the definition of interpolation concentration of element (Zn concentration) is identical with the Ag concentration in the 3rd execution mode, and oxygen concentration is also identical with the definition of the 3rd execution mode.
In addition, the mass ratio through the Al of energy dispersion type x-ray analysis (EDS) when analyzing this joint interface 230, Si, interpolation element (Zn), O, N is Al: Si: add element (Zn): O: N=15～45 quality %: 15～45 quality %: 1～30 quality %: 1～10 quality %: below the 25 quality %.In addition, the analysis condition based on EDS is identical with the 3rd execution mode.
This power module substrate 210 is through the method manufacturing identical with the 3rd execution mode.Just in this execution mode, replace Ag slurry firing process, pass through to electroplate set 0.01mg/cm on the surface of metallic plate 222,223 2Above 10mg/cm 2Following interpolation element (Zn) (electroplating work procedure).And the heating-up temperature in the heating process is more than 600 ℃ below 650 ℃.And electroplating thickness is in the scope of 1 μ m～5 μ m.
In addition, in the radiator lamination operation, get involved between metal level 213 and the top plate portion 241 and contain the fixation layer that adds element (Zn).In this execution mode, fixation layer is through implementing sputter or electroplate to form at the another side of metal level 213.
The power module substrate 210 and the power model 201 of this execution mode that constitutes as stated; Interpolation element (Zn) through making plating engages towards the diffusion of metallic plate 222,223 sides, even therefore under the engaging condition of lower temperature, short time, also can engage ceramic substrate 211 and metallic plate 222,223 securely.
In addition, in this execution mode, be formed with the interpolation element high concentration portion that adds element (Zn) that concentrates, therefore can realize the raising of the bond strength of ceramic substrate 211 and metallic plate 222,223 through the interpolation element atom (Zn atom) that is present near interface.In addition, the thickness of this interpolation element high concentration portion is below the 4nm, and the stress in the time of therefore suppressing through the load thermal cycle causes in adding element high concentration portion, cracking.
And then; In this execution mode; The Al of joint interface 230: Si: add element (Zn): O: N=15～45 quality %: 15～45 quality %: 1～30 quality %: 1～10 quality %: below the 25 quality %; Therefore can prevent that Al generates the problem that engages that too much hinders with the product of adding element (Zn) in joint interface 230, can fully play raising effect simultaneously based on the bond strength that adds element atom (Zn atom).In addition, can prevent to exist in the joint interface 230 the high part of thick oxygen concentration, the generation of the crackle in the time of can suppressing to load thermal cycle.
In addition, in this execution mode, add element (Zn), therefore can get involved interpolation element (Zn) effectively with metallic plate 222, between 223 at ceramic substrate 211 through electroplating in metallic plate 222,223 sets.
Below, with reference to Figure 18 and Figure 30 the 9th execution mode of the present invention is described.
Except the interpolation element difference that is solid-solubilized in metal level 313 (second metallic plate 323) and radiator 340, the power model of the 9th execution mode is identical with the 4th execution mode.Therefore, omit the explanation of common ground, use Figure 18 and symbol thereof that difference is described.
The power model 301 of the 9th execution mode; In Figure 18, solid solution has that to amount to concentration be one or more the interpolation element among Zn, Ge, Mg, Ca, Ga and the Li that is selected from the scope below the above 5 quality % of 0.01 quality % in metal level 313 (second metallic plate 323) and the radiator 340.
Specifically, near the joint interface 330 of metal level 313 and radiator 340, be formed with on laminating direction and add the concentration dipping bed 333,334 that concentration of element reduces gradually along with leaving from joint interface 330.
At this, in this execution mode, use Ge as adding element, metal level 313 is set at below the above 5 quality % of 0.01 quality % with near the joint interface 330 Ge concentration of radiator 340.The CONCENTRATION DISTRIBUTION of the interpolation element (Ge) of metal level shown in Figure 30 313 and radiator 340.
The power module substrate of the band radiator of this formation and the 4th execution mode likewise, through implement the engaging of ceramic substrate 311 and metallic plate 322,323 simultaneously, metallic plate 323 is made with engaging of radiator 340.
In this execution mode that constitutes as stated, Ge is for reducing the element of aluminium fusing point, though therefore under the engaging condition of lower temperature, short time joint also can engage the radiator 340 and second metallic plate 323 securely.
In addition, in this execution mode, getting involved at joint interface has Ge, therefore can engage ceramic substrate 311 and first metallic plate 322, ceramic substrate 311 and second metallic plate 323 securely.
And then, since radiator 340 and second metallic plate 323 engage and the engaging of ceramic substrate 311 and first metallic plate 322 and second metallic plate 323 in do not use the solder paper tinsel, so need not to carry out the solder paper tinsel to bit manipulation etc.Therefore, can produce the power module substrate of the band radiator of this execution mode effectively with low cost.
In addition, in this execution mode, carry out engaging of ceramic substrate 311 and first metallic plate 322 and second metallic plate 323 and engaging of second metallic plate 323 and radiator 340 simultaneously, therefore can significantly cut down their the required cost of joint.And, to ceramic substrate 311 need not to carry out repeated heating, therefore cooling is accomplished, and can realize the minimizing of warpage of the power module substrate of this band radiator, makes the power module substrate of high-quality band radiator.
In addition, in the power module substrate of the band radiator of this execution mode,, can prevent the generation of the be full of cracks in second metallic plate 323 (metal level 313) and the radiator 340 through as the Ge solution strengthening of adding element.The power module substrate of the high band radiator of reliability can be provided thus.
More than, execution mode of the present invention is illustrated, but the present invention is not limited thereto, can suitably change in the scope that does not break away from technological thought of the present invention.
For example, for the metallic plate of forming circuit layer and the metal level situation as the fine aluminium milled sheet of purity 99.99% is illustrated, but being not limited thereto, also can be that purity is aluminium (2N aluminium) or the aluminium alloy more than 99%.
In addition, to using the situation of Ag, Ge, Mg, Zn to be illustrated, but be not limited thereto, also can use one or more the interpolation element that is selected among Ag, Zn, Ge, Mg, Ca, Ga and the Li as adding element.
And then, the coating through sputter, slurry, the situation of electroplating set to add element are illustrated, but are not limited to this, also can come the said interpolation element of set through vapor deposition, CVD, cold spraying or the coating that is dispersed with the printing ink of powder.
In addition, also can be with Al with Ag, Zn, Ge, Mg, Ca, Ga and Li set.Particularly, during as oxidation activity elements such as interpolation element use Mg, Ca, Li,, can prevent the oxidation of these elements through with the Al set.
And then, the situation that is made up of radiator aluminium is illustrated, but also can constitutes by aluminium alloy or the composite material that contains aluminium etc.In addition, stream with coolant situation as radiator is illustrated, but the structure of radiator does not have special qualification, can use the radiator of various formations.
And then shown in figure 31, metal level 1013 also can be the structure of a plurality of metallic plate 1013A of lamination, 1013B.Under this situation, the metallic plate 1013A that is arranged in side's side (Figure 31 is a upside) of metal level 1013 engages with ceramic substrate 1011, and the metallic plate 1013B that is arranged in the opposing party's side (Figure 31 is a downside) engages with the top plate portion 1041 of radiator 1040.So; Between the top plate portion 1041 of the metallic plate 1013B of the opposing party's side and radiator 1040, getting involved one or more the interpolation element that is selected among Ag, Zn, Ge, Mg, Ca, Ga and the Li, engaging thus and be positioned at the metallic plate 1013B of the opposing party's side and the top plate portion 1041 of radiator 1040.At this, get involved said interpolation element between the metallic plate 1013A that also can press for tegillum, the 1013B and constitute metal level 1013.In addition, be two metallic plate 1013A of lamination, 1013B among Figure 31, but the number of lamination is not limited.And the size between the metallic plate of lamination, shape can be different, also can be adjusted into identical size, shape.And then the composition of these metallic plates also can be different.
Embodiment
(embodiment 1)
Comparative experiments to carrying out in order to confirm validity of the present invention describes.
On the ceramic substrate that the AlN that by thickness is 0.635mm constitutes, engage by thickness and be the circuit layer that constitutes of the 4N aluminium of 0.6mm and be the metal level that the 4N aluminium of 0.6mm constitutes by thickness, produced power module substrate.
At this; The composition surface set of the aluminium sheet that becomes circuit layer and metal level (4N aluminium) be selected among Ag, Zn, Ge, Mg, Ca, Ga and the Li one or more the interpolation element and form fixation layer, laminated metal sheet and ceramic substrate and pressurized, heated (temperature: 650 ℃, pressure: 4kgf/cm 2, the time: 30 minutes), engaged metallic plate and ceramic substrate.
And, make the various samples of the interpolation element that has changed set, analyzed near the concentration of the interpolation element of (apart from the position of the joint interface 50 μ m) joint interface through EPMA.And, use these samples to carry out the evaluation of joint reliability.As the evaluation of joint reliability, compared repeatedly the joint rate after 2000 cold cycling (45 ℃～125 ℃).The result is shown in table 1.In addition, engage rate with computes.At this, the initial engagement area is meant the area that should engage before engaging.
Joint rate=(initial engagement area-peel off area)/initial engagement area
[table 1]
Figure BDA0000155068230000451
Set amount at Ag is 11mg/cm 2Comparative example 1 in, near the Ag concentration the joint interface has surpassed 10 quality %, the joint rate after 2000 cold cycling (45 ℃～125 ℃) is 67.7% repeatedly.Judge that its former because Ag amount is many and metallic plate becomes really up to the mark, the thermal stress that cold cycling the causes joint interface of loading.
In addition, the set amount at Ag is 0.009mg/cm 2Comparative example 2 in, near the Ag concentration the joint interface is less than 0.05 quality %, the joint rate after 2000 cold cycling (45 ℃～125 ℃) is 60.1% repeatedly.Judge that it is former because it is few to get involved in the Ag at interface amount, can't fully form the motlten metal zone at the interface of metallic plate and ceramic substrate.
Relative therewith; In the present invention's example 1～36; Near the joint interface Ag concentration or one or more the total concentration of interpolation element that is selected among Ag, Zn, Ge, Mg, Ca, Ga and the Li are that the joint rate after 2000 cold cycling (45 ℃～125 ℃) is for being more than 70% repeatedly below the above 10 quality % of 0.05 quality %.Judge through various interpolation elemental diffusion, can form the motlten metal zone effectively at the interface of metallic plate and ceramic substrate, securely bonding metal plates and ceramic substrate.
(embodiment 2)
Comparative experiments to carrying out in order to confirm validity of the present invention describes.
On the ceramic substrate that the AlN that by thickness is 0.635mm constitutes, engage by thickness and be the circuit layer that constitutes of the 4N aluminium of 0.6mm and be the metal level that the 4N aluminium of 0.6mm constitutes by thickness, produced power module substrate.
At this; The composition surface set of the aluminium sheet that becomes circuit layer and metal level (4N aluminium) be selected among Zn, Ge, Mg, Ca, Ga and the Li one or more the interpolation element and form fixation layer, laminated metal sheet and ceramic substrate and pressurized, heated (temperature: 650 ℃, pressure: 4kgf/cm 2, the time: 30 minutes), engaged metallic plate and ceramic substrate.
And, make the various samples of the interpolation element that has changed set, analyzed near the concentration of the interpolation element of (apart from the position of the joint interface 50 μ m) joint interface through EPMA.And, use these samples to carry out the evaluation of joint reliability.As the evaluation of joint reliability, compared repeatedly the joint rate after 2000 cold cycling (45 ℃～125 ℃).The result is shown in table 2, table 3.In addition, engage rate with computes.At this, the initial engagement area is meant the area that should engage before engaging.
Joint rate=(initial engagement area-peel off area)/initial engagement area
[table 2]
Figure BDA0000155068230000471
[table 3]
Figure BDA0000155068230000481
Fixation layer be selected among Zn, Ge, Mg, Ca, Ga and the Li one or more the interpolation element the set amount add up to 10.35mg/cm 2Comparative example 11 in, the joint rate after 2000 cold cycling (45 ℃～125 ℃) is 65.9% repeatedly.It is many and metallic plate becomes really up to the mark because add amount of element to judge that it is former, the thermal stress that cold cycling the causes joint interface of loading.
The set amount of the interpolation element of fixation layer is 0.009mg/cm 2Comparative example 12 in, the joint rate after 2000 cold cycling (45 ℃～125 ℃) is 59.8% repeatedly.Judge that it is former because it is few to get involved in the interpolation amount of element at interface, can't fully form the motlten metal zone at the interface of metallic plate and ceramic substrate.
Relative therewith, in the present invention's example 41～83, the joint rate after 2000 cold cycling (45 ℃～125 ℃) is more than 70% repeatedly.Judge through various interpolation elemental diffusion, can form the motlten metal zone effectively at the interface of metallic plate and ceramic substrate, securely bonding metal plates and ceramic substrate.
Utilizability on the industry
According to the present invention, the joint interface side sections through the solution strengthening metallic plate can prevent the fracture in metal plate sections, can improve joint reliability.
Symbol description
1,101,201,301,401,1001 power models
3 semiconductor chips (electronic component)
10,110,210,310,410,1010 power module substrates
11,111,211,311,411,1011 ceramic substrates
12,112,212,312,412,1012 circuit layers
13,113,213,313,413,1013 metal levels
22,122,222,322,422 metallic plates (first metallic plate)
23,123,223,323,423 metallic plates (second metallic plate)

Claims (16)

1. power module substrate, for possessing ceramic substrate and engage the power module substrate of the metallic plate of aluminum or aluminum alloy system in the surface laminated of this ceramic substrate,
In said metallic plate, solid solution has Ag or is selected from one or more the interpolation element among Zn, Ge, Mg, Ca, Ga and the Li,
Ag concentration with near interface said ceramic substrate in the said metallic plate is set in more than the 0.05 quality % below the 10 quality %, and the total concentration of Zn, Ge, Mg, Ca, Ga and the Li of in the perhaps said metallic plate and near interface said ceramic substrate is set in more than the 0.01 quality % below the 5 quality %.
2. power module substrate according to claim 1,
In said metallic plate; Except Ag; Also solid solution has one or more the element that is selected among Zn, Ge, Mg, Ca, Ga and the Li, and the Ag of in the said metallic plate and near interface said ceramic substrate and the total concentration of Zn, Ge, Mg, Ca, Ga and Li are set in more than the 0.05 quality % below the 10 quality %.
3. power module substrate according to claim 1 and 2,
Said ceramic substrate is by AlN or Si 3N 4Constitute, at the joint interface of said metallic plate and said ceramic substrate, being formed with oxygen concentration is the oxygen high concentration portion more than 2 times of the intragranular oxygen concentration of said ceramic substrate, and the thickness of said oxygen high concentration portion is below the 4nm.
4. according to each described power module substrate of claim 1～3,
At the joint interface of said metallic plate and said ceramic substrate, the concentration that is formed with said interpolation element is the interpolation element high concentration portion more than 2 times of the concentration of the said interpolation element in the said metallic plate.
5. power module substrate according to claim 4,
Said ceramic substrate is made up of AlN,
When containing the said joint interface of said interpolation element high concentration portion with the analysis of energy dispersion type x-ray analysis, the mass ratio of Al, said interpolation element, O, N is Al: add element: O: N=50～90 quality %: 1～30 quality %: 1～10 quality %: below the 25 quality %.
6. power module substrate according to claim 4,
Said ceramic substrate is by Si 3N 4Constitute,
When containing the said joint interface of said interpolation element high concentration portion with the analysis of energy dispersion type x-ray analysis, the mass ratio of Al, Si, said interpolation element, O, N is Al: Si: add element: O: N=15～45 quality %: 15～45 quality %: 1～30 quality %: 1～10 quality %: below the 25 quality %.
7. power module substrate according to claim 4,
Said ceramic substrate is by Al 2O 3Constitute,
When containing the said joint interface of said interpolation element high concentration portion with the analysis of energy dispersion type x-ray analysis, the mass ratio of Al, said interpolation element, O is Al: add element: O=50～90 quality %: 1～30 quality %: below the 45 quality %.
8. power module substrate with radiator possesses each the described power module substrate in the claim 1 to 7 and is used to cool off the radiator of this power module substrate,
Have: said ceramic substrate;
Be bonded on first metallic plate of a lip-deep aluminum or aluminum alloy system of this ceramic substrate;
Be bonded on second metallic plate of another lip-deep aluminum or aluminum alloy system of said ceramic substrate; And
Be bonded on the radiator on the face of in said second metallic plate and composition surface opposition side said ceramic substrate,
In said second metallic plate and said radiator, solid solution has Ag or is selected from one or more the interpolation element among Zn, Ge, Mg, Ca, Ga and the Li,
The Ag concentration of the near interface of said second metallic plate and said radiator is set in below the above 10 quality % of 0.05 quality %, and the total concentration of the Zn of the near interface of perhaps said second metallic plate and said radiator, Ge, Mg, Ca, Ga and Li is set in below the above 5 quality % of 0.01 quality %.
9. the power module substrate of band radiator according to claim 8,
In said second metallic plate and said radiator; Except Ag; Also solid solution has one or more the element that is selected among Zn, Ge, Mg, Ca, Ga and the Li, and the total concentration of the Ag of the near interface of said second metallic plate and said radiator and Zn, Ge, Mg, Ca, Ga and Li is set in below the above 10 quality % of 0.05 quality %.
10. a power model is characterized in that,
Possess each the described power module substrate in the claim 1 to 9 and be equipped on the electronic component on the said power module substrate.
11. the manufacturing approach of a power module substrate, for possessing ceramic substrate and engaging the manufacturing approach of power module substrate of the metallic plate of aluminum or aluminum alloy system in the surface laminated of this ceramic substrate, this method has:
The set operation, at least one side in the composition surface of the composition surface of said ceramic substrate and said metallic plate, set is selected from one or more the interpolation element among Ag, Zn, Ge, Mg, Ca, Ga and the Li, forms the fixation layer that contains this interpolation element;
Lamination, under the state of getting involved said fixation layer, said ceramic substrate of lamination and said metallic plate;
Heating process heats when being pressurizeed by the said ceramic substrate of lamination and said metallic plate on laminating direction, forms the motlten metal zone at the interface of said ceramic substrate and said metallic plate; And
Solidify operation, engage said ceramic substrate and said metallic plate through solidifying this motlten metal zone,
In said lamination, make said interpolation element at 0.01mg/cm 2Above 10mg/cm 2Get involved in the following scope at the interface of said ceramic substrate and said metallic plate,
In said heating process, spread to said metallic plate through making said interpolation element, thereby form said motlten metal zone at the interface of said ceramic substrate and said metallic plate.
12. the manufacturing approach of power module substrate according to claim 11,
In said set operation, with Al with the set of said interpolation element.
13. according to the manufacturing approach of claim 11 or 12 described power module substrates,
Said set operation forms said fixation layer through at least one side's coating Ag slurry in the composition surface of the composition surface of said ceramic substrate and said metallic plate.
14. manufacturing approach with the power module substrate of radiator; The power module substrate of said band radiator possess ceramic substrate, with first metallic plate of the aluminum or aluminum alloy system of a surface engagement of this ceramic substrate, with second metallic plate of the aluminum or aluminum alloy system of another surface engagement of said ceramic substrate and be bonded on radiator on the face of in said second metallic plate and composition surface opposition side said ceramic substrate manufacturing approach
This method has:
Ceramic substrate engages operation, engages said ceramic substrate with said first metallic plate and engage said ceramic substrate and said second metallic plate; And
Radiator engages operation, in the one side of said second metallic plate, engages said radiator,
Said radiator engages operation to have:
Add the element layer and form operation, at least one side's set in the composition surface of the composition surface of said second metallic plate and said radiator be selected among Ag, Zn, Ge, Mg, Ca, Ga and the Li one or more the interpolation element and form interpolation element layer;
Radiator lamination operation is through said second metallic plate of said interpolation element laminated and said radiator;
The radiators heat operation heats when being pressurizeed by said second metallic plate of lamination and said radiator on laminating direction, forms the motlten metal zone at the interface of said second metallic plate and said radiator; And
Motlten metal solidifies operation, through solidifying this motlten metal zone, engages said second metallic plate and said radiator,
In said radiators heat operation, spread to said second metallic plate and said radiator through the interpolation element that makes said interpolation element layer, form said motlten metal zone at the interface of said second metallic plate and said radiator.
15. the manufacturing approach of the power module substrate of band radiator according to claim 14,
Carry out said ceramic substrate simultaneously and engage operation and said radiator joint operation.
16. according to the manufacturing approach of the power module substrate of claim 14 or 15 described band radiators, wherein,
Said interpolation element layer forms in the operation, with Al with the set of said interpolation element.
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