CN102646604A - Radiator-contained substrate for power module and manufacturing method thereof, and power module - Google Patents
Radiator-contained substrate for power module and manufacturing method thereof, and power module Download PDFInfo
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- CN102646604A CN102646604A CN2011100430345A CN201110043034A CN102646604A CN 102646604 A CN102646604 A CN 102646604A CN 2011100430345 A CN2011100430345 A CN 2011100430345A CN 201110043034 A CN201110043034 A CN 201110043034A CN 102646604 A CN102646604 A CN 102646604A
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- metallic plate
- radiator
- ceramic substrate
- power module
- layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Abstract
The invention provides a manufacturing method of a radiator-contained substrate capable of inhibiting generation of a clearance at a bonding interface of a radiator and a second metal plate and tightly bonding the radiator with the second metal plate, a radiator-contained substrate for a power module, and a power module. The invention is characterized in that the process of bonding the radiator on the other surface of the second metal plate comprises the following steps: Si layer formation (S01): forming an Si layer on at least one of the other surface of the second metal plate and the bonding surface of the radiator; radiator lamination (S02): laminating the metal plate and the radiator through the Si layer; radiator heating (S03): heating while the second metal plate and the radiator apply pressure to the lamination direction, so that the Si in the Si layer diffuses to the second metal plate and the diffusion, thereby forming a molten metal region; and molten metal solidification (S04): solidifying the molten metal region to bond the second metal plate with the radiator.
Description
Technical field
The present invention relates to a kind of manufacturing approach of the power module substrate that carries radiator that uses in big electric current, the high-tension semiconductor device, the power module substrate that carries radiator and power model controlled.
Background technology
Because the caloric value that in semiconductor element, is used for the power component that electric power supplies with is than higher, so as the substrate that carries this power component, for example using has the power module substrate that carries radiator as follows: by AlN (aluminium nitride) or Si
3N
4When engaging first metallic plate of Al (aluminium) on the ceramic substrate of formations such as (silicon nitrides), second metallic plate through Al (aluminium) engages radiator at the opposition side of substrate.
In this power module substrate that carries radiator, first metallic plate forms as circuit layer, on first metallic plate, carries the semiconductor chip of power component through scolder.
In the past, the said power module substrate that carries radiator was for example shown in patent documentation 1, by following order manufacturing.
At first; One side at ceramic substrate is passed through solder lamination first metallic plate; Another side at ceramic substrate passes through solder lamination second metallic plate; Heat to its pressurization the time to laminating direction with predetermined pressure, make ceramic substrate engage (ceramic substrate joint operation) with first metallic plate and second metallic plate.
Then, the face of the opposition side of ceramic substrate in second metallic plate through solder lamination radiator, heats when laminating direction pressurizes with predetermined pressure, makes second metallic plate engage (radiator joint operation) with radiator thus.
Patent documentation 1: the open 2002-009212 communique of Japan Patent
But; Engage in the operation with the radiator of second metallic plate at the joint radiator; When using the solder paper tinsel; There is following tendency in the interface portion of second metallic plate and radiator: on the surface of second metallic plate and radiator, there are oxide film in 4 faces on the two sides of solder paper tinsel, the total thickness thickening of oxide film.At this, when engaging second metallic plate and radiator, in order to remove these oxide films, with sufficient pressure to laminating direction pressurization radiator and second metallic plate (power module substrate) and carry out heat treated.Yet, fail to remove oxide film in the inadequate part of pressurization, might be in local generation space, the joint interface place of the radiator and second metallic plate.
Especially, proposing in recent years has the method for a plurality of semiconductor elements being installed at 1 power module substrate, and the bonding area of the radiator and second metallic plate has the trend of maximization, and the danger that produces said space increases.
And when soldering second metallic plate and radiator, in order to set fusing point than the lowland, using the Al-Si that contains the above Si of 7.5 quality % mostly is the solder alloy paper tinsel.The Al-Si that so contains more Si is in the alloy, because extensibility is insufficient, is difficult to wait manufacturing paper tinsel material through calendering.
In addition, configuration solder paper tinsel between the radiator and second metallic plate to the laminating direction pressurization and heat, but needs lamination configuration solder paper tinsel, radiator and second metallic plate with these, in order to avoid the dislocation of solder paper tinsel takes place during pressurization.
Summary of the invention
The present invention accomplishes in view of said situation; Its purpose is to provide a kind of generation that can suppress the space, joint interface place of the radiator and second metallic plate; But the secure engagement radiator and second metallic plate; And the manufacturing approach of the power module substrate that carries radiator of the high-quality power module substrate that carries radiator can be provided, and the power module substrate that carries radiator, the power model that obtain according to this manufacturing approach.
For solving this problem and realize said purpose, in the manufacturing approach of the power module substrate that carries radiator of the present invention, the said power module substrate that carries radiator possesses: ceramic substrate; First metallic plate is made up of and one side is engaged in the surface of this ceramic substrate aluminium; Second metallic plate is made up of and one side is engaged in the back side of said ceramic substrate aluminium; And radiator; By aluminum or aluminum alloy constitute and be engaged in the another side of this second metallic plate, the face of the opposition side of the said one side that promptly engages with said ceramic substrate; It is characterized in that; Have: ceramic substrate engages operation, engages said ceramic substrate and said first metallic plate, and engages said ceramic substrate and said second metallic plate; And radiator engages operation; Another side at said second metallic plate engages said radiator; Said radiator engages operation to have: the Si layer forms operation, at least one side's set Si in the composition surface of the another side of said second metallic plate and said radiator and form the Si layer; Radiator lamination operation, through said Si layer, said second metallic plate of lamination and said radiator; The radiators heat operation will be heated when laminating direction pressurizes by said second metallic plate and the said radiator of lamination, form the motlten metal zone at the interface of said second metallic plate and said radiator; And motlten metal solidifies operation; Engage said second metallic plate and said radiator through solidifying this motlten metal zone; In said radiators heat operation; Si through making said Si layer spreads to said second metallic plate and said radiator, thereby forms said motlten metal zone at the interface of said second metallic plate and said radiator.
In the manufacturing approach of the power module substrate that carries radiator of this structure; Possess the Si layer that at least one side's set Si that has in the composition surface of the another side of said second metallic plate and said radiator forms the Si layer and form operation owing to the radiator that engages radiator at the another side of second metallic plate engages operation, so Si is arranged in the joint interface intervention of second metallic plate and radiator.At this,, therefore under condition, also can form the motlten metal zone at the interface of said second metallic plate and said radiator than lower temperature because Si is the element that reduces the fusing point of aluminium.
And; In the heating process; Through the Si in the Si layer is spread to said second metallic plate and heat sink side; Form said motlten metal zone at the interface of said radiator and said second metallic plate, become the structure that engages said second metallic plate and said radiator, therefore need not to use solder paper tinsel that Al-Si is etc. through solidifying this motlten metal zone.
And because at second metallic plate and the direct set Si of radiator, so oxide film only is present in the surface of second metallic plate and radiator, and the total thickness of oxide film at interface that is present in second metallic plate and radiator is thinner during than use solder paper tinsel.Thus, during joint, can remove oxide film really, and can be suppressed at the joint interface generation space of second metallic plate and radiator, thereby improve the bond strength of second metallic plate and radiator.
And; As previously mentioned; Owing to the solder paper tinsel that does not use the Al-Si system that makes difficulty etc. engages said second metallic plate and said radiator, so can make the power module substrate that carries radiator that second metallic plate and radiator engage really with low cost.
In addition, the direct set Si of at least one side owing to do not use the solder paper tinsel in the another side of the composition surface of said radiator and said second metallic plate is so need not to carry out the positioning work etc. of solder paper tinsel.
At this; Said Si layer forms in the operation; The preferred at least one side in the composition surface of the another side of said second metallic plate and said radiator, except Si, also set is selected from interpolation element above in a kind or 2 among Cu, Zn, Ge, Ag, Mg, Ca, Ga and the Li.
At this moment, at the joint interface of second metallic plate and radiator, except Si, also getting involved has the interpolation element more than a kind or 2 kinds that is selected among Cu, Zn, Ge, Ag, Mg, Ca, Ga and the Li.At this, because therefore the element of Cu, Zn, Ge, Ag, Mg, Ca, Ga and Li and so under the condition than lower temperature, also can form the motlten metal zone at the interface of second metallic plate and radiator really for reducing the element of aluminium fusing point.
Thus, even engage under than the engaging condition of lower temperature, short time, also further secure engagement second metallic plate and radiator.
And, form in the operation at said Si layer, preferably be made as the structure of set Al together with Si.
At this moment since with Si set Al together, so the Si layer that forms contains Al, in the heating process, the preferential fusion of this Si layer can form the motlten metal zone really at the interface of second metallic plate and radiator, and can secure engagement second metallic plate and radiator.In addition, for Si set Al together, vapor deposition Si and Al also can carry out sputter as target with the alloy of Si and Al simultaneously.In addition, but also lamination Si and Al.
And; Said ceramic substrate engages operation also can be made as following structure; Promptly have: metal set operation; Among at least one side's set Cu in the composition surface of the composition surface of the said ceramic substrate at the joint interface place of said ceramic substrate and said first metallic plate and said first metallic plate or the Si more than a kind and when forming the 1st metal level, among at least one side's set Cu in the composition surface of the said ceramic substrate in the joint interface of said ceramic substrate and said second metallic plate and the composition surface of said second metallic plate or the Si more than a kind and form the 2nd metal level; Ceramic substrate lamination operation is in the time of through said said ceramic substrate of the 1st metal level lamination and said first metallic plate, through said said ceramic substrate of the 2nd metal level lamination and said second metallic plate; The ceramic substrate heating process; To when laminating direction pressurizes, be heated by said first metallic plate of lamination, said ceramic substrate and said second metallic plate, form first motlten metal zone and second motlten metal zone at the interface of said first metallic plate and said ceramic substrate and the interface of said ceramic substrate and said second metallic plate; Reach first motlten metal and second motlten metal and solidify operation; Through solidifying this first motlten metal zone and second motlten metal zone; Engage said first metallic plate and said ceramic substrate and said ceramic substrate and said second metallic plate; Wherein, In said ceramic substrate heating process, among Cu that can be through making said the 1st metal level and said the 2nd metal level or the Si more than a kind to said first metallic plate and the diffusion of said second metallic plate, at the interface of said first metallic plate and said ceramic substrate and to form regional and said second motlten metal of said first motlten metal regional at the interface of said ceramic substrate and said second metallic plate.
At this moment, in the engaging of ceramic substrate and first metallic plate and ceramic substrate and second metallic plate, also need not to use solder, can low-costly engage ceramic substrate and first metallic plate and second metallic plate really.
And, owing to have at least a kind of Si or Cu in the joint interface intervention of ceramic substrate and first metallic plate and second metallic plate, so under than the engaging condition of short period, engage, also can secure engagement ceramic substrate and metallic plate.
At this; In said metal set operation; Preferably at least one side in the composition surface of the composition surface of the said ceramic substrate at the joint interface place of said ceramic substrate and said first metallic plate and said first metallic plate or at least one side in the composition surface of the composition surface of the said ceramic substrate at the joint interface place of said ceramic substrate and said second metallic plate and said second metallic plate; In Cu or Si more than a kind, also set is selected from the interpolation element more than a kind or 2 kinds among Zn, Ge, Ag, Mg, Ca, Ga and the Li.
At this moment; At the joint interface of said ceramic substrate and said first metallic plate or the joint interface of said ceramic substrate and said second metallic plate; In Cu or Si more than a kind, also getting involved has the interpolation element more than a kind or 2 kinds that is selected among Zn, Ge, Ag, Mg, Ca, Ga and the Li.At this; Because the element of Zn, Ge, Ag, Mg, Ca, Ga and Li and so on is the element of the fusing point of reduction aluminium; So under condition than lower temperature; Also can form first motlten metal zone really, perhaps can form second motlten metal zone really at the interface of said ceramic substrate and said second metallic plate at the interface of said ceramic substrate and said first metallic plate.
Thus, engage under than the engaging condition of lower temperature, short time, also further the secure engagement ceramic substrate and first metallic plate and second metallic plate.
In addition, preferably carry out said ceramic substrate simultaneously and engage operation and said radiator joint operation.
At this moment, said ceramic substrate engages operation and said radiator engages operation through carrying out simultaneously, can significantly cut down to engage and use cost.And, owing to accomplishing, so can also seek the reduction of the warpage of this power module substrate that carries radiator without repeated heating, cooling.
And said Si layer forms operation preferably is dispersed with powder through plating, vapor deposition, CVD, sputter, cold spraying or through coating paste and ink etc., at least one side's set Si in the another side of the composition surface of said radiator and said second metallic plate.
At this moment; Because Si is dispersed with paste and the ink etc. of powder through plating, vapor deposition, CVD, sputter, cold spraying or through coating; Really be bonded at least one side in the another side of composition surface and said second metallic plate of said radiator, so Si is positively got involved in the joint interface of the radiator and second metallic plate.And, can high accuracy regulate the set amount of Si, and can form the motlten metal zone really and the secure engagement radiator and second metallic plate.
In addition, preferred said second metallic plate is made up of a plurality of metallic plate laminations.
At this moment, because second metallic plate becomes the structure of a plurality of metallic plates of lamination, thus can enough this second metallic plates fully relax the thermal strain that the difference by the thermal coefficient of expansion of radiator and ceramic substrate causes, and can be suppressed in the ceramic substrate generation and break.
The power module substrate that carries radiator of the present invention possesses: ceramic substrate; First metallic plate is made up of and one side is engaged in the surface of this ceramic substrate aluminium; Second metallic plate is made up of and one side is engaged in the back side of said ceramic substrate aluminium; And radiator; By aluminium or aluminium constitute and be engaged in the another side of this second metallic plate, the face of the opposition side of the said one side that promptly engages with said ceramic substrate; It is characterized in that; At said second metallic plate and said radiator solid solution Si is arranged, near the Si concentration the joint interface of said second metallic plate and said radiator is set in more than the 0.05 quality % in the scope below the 0.6 quality %.
According to the power module substrate that carries radiator of this structure and since said second metallic plate and said radiator respectively solid solution Si is arranged, so each joint interface side sections solution strengthening of second metallic plate and radiator.
At this, because the Si concentration of the joint interface vicinity of said second metallic plate and said radiator is more than the 0.05 quality %, so the joint interface side sections of said second metallic plate of solution strengthening positively and said radiator.And; Because the Si concentration of the joint interface vicinity of said second metallic plate and said radiator is below the 0.6 quality %; Too uprise so can prevent the intensity of the joint interface of said second metallic plate and said radiator, and can enough said second metallic plates and said radiator absorption thermal strain.
And preferably at said second metallic plate and said radiator, except Si, also solid solution has the interpolation element more than a kind or 2 kinds that is selected among Cu, Zn, Ge, Ag, Mg, Ca, Ga and the Li.
At this moment; Because at said second metallic plate and said radiator; Except Si; Also solid solution has the interpolation element more than a kind or 2 kinds that is selected among Cu, Zn, Ge, Ag, Mg, Ca, Ga and the Li, so the joint interface side sections of said second metallic plate of solution strengthening and said radiator really.
In addition; Preferably in the joint interface vicinity of said first metallic plate and said ceramic substrate or in the joint interface vicinity of said second metallic plate and said ceramic substrate; In Cu or Si more than a kind, also solid solution has the interpolation element more than a kind or 2 kinds that is selected among Zn, Ge, Ag, Mg, Ca, Ga and the Li.
At this moment; Since in the joint interface vicinity of said first metallic plate and said ceramic substrate perhaps in the joint interface vicinity of said second metallic plate and said ceramic substrate; In Cu or Si more than a kind; Also solid solution has the interpolation element more than a kind or 2 kinds that is selected among Zn, Ge, Ag, Mg, Ca, Ga and the Li, thus in said first metallic plate of solution strengthening positively and said second metallic plate with the joint interface side sections of said ceramic substrate.
And the thickness of said second metallic plate is preferably set to the thickness that is thicker than said first metallic plate.
At this moment, can make the rigidity that is provided with heat sink side be higher than the rigidity of its opposition side, can suppress cooled warpage thus.
In addition, said second metallic plate preferably is made up of a plurality of metallic plate laminations.
At this moment, because second metallic plate becomes the structure of a plurality of metallic plates of lamination, thus can enough this second metallic plates fully relax the thermal strain that the difference by the thermal coefficient of expansion of radiator and ceramic substrate causes, and can be suppressed in the ceramic substrate generation and break.
Power model of the present invention is characterised in that to possess: the said power module substrate that carries radiator be equipped on the electronic component on this power module substrate that carries radiator.
According to the power model of this structure, the bond strength of the radiator and second metallic plate is high, even under the environment for use of sternness, also can disperse the heat from electronic components such as semiconductor elements.
According to the present invention; A kind of generation and the secure engagement radiator and second metallic plate of the space, joint interface place that suppresses the radiator and second metallic plate can be provided, and manufacturing approach, and the power module substrate that carries radiator, the power model that obtain through this manufacturing approach of the power module substrate that carries radiator of the high-quality power module substrate that carries radiator can be provided.
Description of drawings
Fig. 1 is to use the brief description figure of power model of the power module substrate that carries radiator of the 1st execution mode of the present invention.
Fig. 2 is the key diagram of Si CONCENTRATION DISTRIBUTION of metal level and radiator of the power module substrate that carries radiator of expression the 1st execution mode of the present invention.
Fig. 3 is the flow chart of manufacturing approach of the power module substrate that carries radiator of the 1st execution mode of the present invention.
Fig. 4 is the key diagram of manufacturing approach of the power module substrate that carries radiator of expression the 1st execution mode of the present invention.
Fig. 5 is near the key diagram with the joint interface of radiator of second metallic plate (metal level) in the presentation graphs 4.
Fig. 6 is to use the brief description figure of power model of the power module substrate that carries radiator of the 2nd execution mode of the present invention.
Fig. 7 is metal level and the Si CONCENTRATION DISTRIBUTION of radiator and the key diagram of Ge CONCENTRATION DISTRIBUTION of the power module substrate that carries radiator of expression the 2nd execution mode of the present invention.
Fig. 8 is the flow chart of manufacturing approach of the power module substrate that carries radiator of the 2nd execution mode of the present invention.
Fig. 9 is the key diagram of manufacturing approach of the power module substrate that carries radiator of expression the 2nd execution mode of the present invention.
Figure 10 is to use the brief description figure of power model of the power module substrate that carries radiator of the 3rd execution mode of the present invention.
Figure 11 is metal level and the Si CONCENTRATION DISTRIBUTION of radiator and the key diagram of Ag CONCENTRATION DISTRIBUTION of the power module substrate that carries radiator of expression the 3rd execution mode of the present invention.
Figure 12 is the flow chart of manufacturing approach of the power module substrate that carries radiator of the 3rd execution mode of the present invention.
Figure 13 is the key diagram of manufacturing approach of the power module substrate that carries radiator of expression the 3rd execution mode of the present invention.
Figure 14 is the key diagram of manufacturing approach of the power module substrate that carries radiator of expression the 3rd execution mode of the present invention.
Figure 15 is to use the brief description figure of power model of the power module substrate that carries radiator of the 4th execution mode of the present invention.
Figure 16 is the flow chart of manufacturing approach of the power module substrate that carries radiator of the 4th execution mode of the present invention.
Figure 17 is the key diagram of manufacturing approach of the power module substrate that carries radiator of expression the 4th execution mode of the present invention.
Figure 18 is the key diagram of manufacturing approach of the power module substrate that carries radiator of expression the 4th execution mode of the present invention.
Figure 19 is to use the brief description figure of power model of the power module substrate that carries radiator of other execution modes of the present invention.
Symbol description
3-semiconductor chip (electronic component), 10,110,210,310, the 410-power module substrate, 11,111,211,311, the 411-ceramic substrate; 12,112,212,312,412-circuit layer (first metallic plate), 13,113,213,313,413-metal level (second metallic plate), 40,140,240,340, the 440-radiator; 24,124,224,324-1Si layer (the 1st metal level), 25,125,225,325-2Si layer (the 2nd metal level), 26,126,226, the 326-Si layer; 27-first motlten metal zone; 28-second motlten metal zone, 29-motlten metal zone, 30,130, the 230-joint interface.
Embodiment
Below, with reference to accompanying drawing execution mode of the present invention is described.
The power module substrate that carries radiator and the power model of expression the 1st execution mode of the present invention among Fig. 1.
This power model 1 possesses and has: power module substrate 10 is equipped with circuit layer 12; Semiconductor chip 3 is engaged in the surface of circuit layer 12 through layer 2; And radiator 40.At this, the scolder that layer 2 for example for Sn-Ag system, Sn-In system or Sn-Ag-Cu is.In addition, in this execution mode, be provided with Ni coating (not shown) between circuit layer 12 and the layer 2.
And, as shown in Figure 2, in the joint interface 30 of metal level 13 (metallic plate 23) and radiator 40, Si is arranged at metal level 13 (metallic plate 23) and radiator 40 solid solutions.Be formed with Si concentration in joint interface 30 vicinity of metal level 13 and radiator 40 along with leaving and the concentration dipping bed 33,34 that reduces gradually to laminating direction from joint interface 30.At this, near the Si concentration of joint interface 30 sides of this concentration dipping bed 33,34 (joint interface 30 of metal level 13 and radiator 40) is set in the scope below the above 0.6 quality % of 0.05 quality %.
In addition, the Si concentration of joint interface 30 vicinity of metal level 13 and radiator 40 is to analyze (spot diameter 30 μ m) at the mean value that carries out 5 mensuration apart from 50 μ m positions of joint interface 30 through EPMA.And the chart of Fig. 2 is that the width middle body at metal level 13 (metallic plate 23) and radiator 40 (top plate portion 41) carries out linear analysis to laminating direction, and is the chart that benchmark is obtained with the concentration of said 50 μ m positions.
Followingly the manufacturing approach of the power module substrate that carries radiator of said structure is described with reference to Fig. 3 to Fig. 5.
(the Si layer forms operation S01/Si set operation S11)
At first; Like Fig. 4, shown in Figure 5; When forming 1Si layer 24, form 2Si layer 25 (Si set operation S11) through the one side set Si that sputters at the metallic plate 23 that becomes metal level 13 through the one side set Si that sputters at the metallic plate 22 that becomes circuit layer 12.
And, form Si layer 26 (Si forms operation S01) through the another side set Si that sputters at the metallic plate 23 that becomes metal level 13.
At this, in this execution mode, the Si of 1Si layer 24,2Si layer 25 and Si layer 26 amount is set in 0.002mg/cm
2Above 1.2mg/cm
2Below.
(radiator lamination operation S02/ ceramic substrate lamination operation S12)
Then, as shown in Figure 4, metallic plate 22 is laminated to the one side side of ceramic substrate 11, and metallic plate 23 is laminated to the another side side (ceramic substrate lamination operation S12) of ceramic substrate 11.At this moment, as shown in Figure 4, with the face that is formed with 2Si layer 25 of the face that is formed with 1Si layer 24 of metallic plate 22, metallic plate 23 mode laminated metal sheet 22,23 towards ceramic substrate 11.
In addition, at the another side side lamination radiator 40 (radiator lamination operation S02) of metallic plate 23.At this moment, as shown in Figure 4, with the face that is formed with Si layer 26 of metallic plate 23 mode laminated metal sheet 23 and radiator 40 towards radiator 40.
That is, between metallic plate 22,23 and ceramic substrate 11, get involved 1Si layer 24,2Si layer 25 respectively, between metallic plate 23 and radiator 40, get involved Si layer 26.
(radiators heat operation S03/ ceramic substrate heating process S13)
Then, with metallic plate 22, ceramic substrate 11, metallic plate 23, radiator 40 with to laminating direction pressurization (pressure 1～35kgf/cm
2) state pack into and heat in the vacuum furnace, form 27, second motlten metal zone, first motlten metal zone, 28 (ceramic substrate heating process S13) respectively at the interface of metallic plate 22,23 and ceramic substrate 11.
And, between metallic plate 23 and radiator 40, form motlten metal zone 29 (radiators heat operation S03) simultaneously.
As shown in Figure 5, motlten metal zone 29 is through form as follows: the Si through Si layer 26 spreads to metallic plate 23 sides and radiator 40 sides, thereby near the Si concentration the Si layer of metallic plate 23 and radiator 40 26 rise the fusing point step-down.
In addition, above-mentioned pressure is less than 1kgf/cm
2The time, might carry out engaging of ceramic substrate 11 and metallic plate 22,23 and engaging of metallic plate 23 and radiator 40 well.And above-mentioned pressure surpasses 35kgf/cm
2The time, might metallic plate 22,23 and radiator 40 distortion.Thus, above-mentioned moulding pressure preferably is located at 1～35kgf/cm
2Scope in.
At this, in this execution mode, the pressure in the vacuum furnace is set in 10
-6Pa above 10
-3In the scope below the Pa, heating-up temperature is set in more than 600 ℃ in the scope below 650 ℃.
(motlten metal solidifies operation S04/ first motlten metal and second motlten metal solidifies operation S14)
Then, under the state that forms motlten metal zone 29, temperature is remained constant.Like this, the Si in the motlten metal zone 29 is further to metallic plate 23 sides and the diffusion of radiator 40 sides.Thus, once the Si concentration for the part in motlten metal zone 29 reduced gradually, and fusing point rises, and solidified in that temperature is remained under the constant state.That is, radiator 40 engages through so-called diffusion bond (Transient Liquid Phase Diffusion Bonding) with metallic plate 23.So, be cooled to normal temperature after solidifying.Equally, the Si in first motlten metal zone, 27, second motlten metal zone 28 spreads to metallic plate 22,23 sides.Thus, once be that the Si concentration of the part in 27, second motlten metal zone, first motlten metal zone 28 reduces gradually, fusing point rises, and solidifies in that temperature is remained under the constant state.Thus, ceramic substrate 11 engages with metallic plate 22,23.
So, the metallic plate 22,23 that becomes circuit layer 12 and metal level 13 engages with ceramic substrate 11, and metallic plate 23 engages with radiator 40, produces the power module substrate that carries radiator of this execution mode.
As the power module substrate that carries radiator and power model 1 of this execution mode of above structure in; There is the Si layer that between metallic plate that becomes metal level 13 23 and radiator 40, forms Si layer 26 to form operation S01 owing to possess, so get involved Si at the metallic plate 23 and the joint interface 30 of radiator 40.At this, because Si for reducing the element of aluminium fusing point, therefore also can positively form motlten metal zone 29 at the interface of metallic plate 23 and radiator 40 under than the condition of lower temperature.
In addition; Owing to be following structure: in radiators heat operation S03; The Si of the Si layer 26 through making the another side that is formed at metallic plate 23 spreads to metallic plate 23 sides and radiator 40 sides and forms motlten metal zone 29, solidifies among the operation S04 at motlten metal, further solidifies to metallic plate 23 sides and the diffusion of radiator 40 sides through making the Si in the motlten metal zone 29; And engage radiator 40 and metal level 13 (metallic plate 23), so need not to use the solder paper tinsel etc. of Al-Si system.
And; Because at the direct set Si of metal level 13 (metallic plate 23); So oxide film only is formed at the surface of metal level 13 (metallic plate 23) and radiator 40 (top plate portion 41), the total thickness of oxide film at interface that is present in metal level 13 (metallic plate 23) and radiator 40 (top plate portion 41) is thinner when using the solder paper tinsel.Thus, can positively remove oxide film, and can be suppressed at the joint interface 30 generation spaces of metal level 13 (metallic plate 23) and radiator 40 (top plate portion 41), improve the bond strength of metal level 13 (metallic plate 23) and radiator 40 (top plate portion 41).
And; In this execution mode; Also is following structure about ceramic substrate 11 with circuit layer 12 (metallic plate 22) and metal level 13 (metallic plate 23): in ceramic substrate heating process S13; Form 27, second motlten metal zone, first motlten metal zone 28 through the 1Si layer 24 that makes the composition surface that is formed at metallic plate 22,23, the Si of 2Si layer 25 to the diffusion of metallic plate 22,23 sides; Solidify among the operation S14 at first motlten metal and second motlten metal; Through the Si in 27, second motlten metal zone, first motlten metal zone 28 is further solidified to the diffusion of metallic plate 22,23 sides; Engage ceramic substrate 11 and circuit layer 12 (metallic plate 22) and metal level 13 (metallic plate 23); So the total thickness attenuation that these are present in joint interface and ceramic substrate 11 with the oxide film of the joint interface of metal level 13 (metallic plate 23) of ceramic substrate 11 and circuit layer 12 (metallic plate 22) can improve the rate of finished products of ceramic substrate 11 and circuit layer 12 (metallic plate 22) and ceramic substrate 11 and the initial engagement of metal level 13 (metallic plate 23).
In addition; Owing to engage and do not use during the engaging of ceramic substrate 11 and metallic plate 22,23 the solder paper tinsel at radiator 40 and metallic plate 23; So need not to carry out the positioning work of solder paper tinsel etc., just can positively engage radiator 40 and metallic plate 23, ceramic substrate 11 and metallic plate 22,23 respectively.Thus, can effectively produce the power module substrate that carries radiator of this execution mode with low cost.
And, in this execution mode, owing to be to carry out engaging and the structure that engages of metallic plate 23 and radiator 40 of ceramic substrate 11 and metallic plate 22,23 simultaneously, so can significantly cut down cost about these joints.And, owing to need not ceramic substrate 11 is carried out repeated heating, cools off and can accomplish, so can seek the reduction of the warpage of this power module substrate that carries radiator, and can produce the high-quality power module substrate that carries radiator.
In addition, be the structure that forms Si layer 26 through the another side set Si that sputters at metallic plate 23 because the Si layer forms operation S01, so can between radiator 40 and metallic plate 23, positively get involved Si.And, the set amount that can regulate Si accurately, and can positively form motlten metal zone 29 and secure engagement radiator 40 and metallic plate 23.
And; In the power module substrate that carries radiator of this execution mode; In the joint interface 30 of radiator 40 and metal level 13 (metallic plate 23); At metal level 13 (metallic plate 23) and radiator 40 solid solutions Si is arranged; The Si concentration of each joint interface 30 side of metal level 13 and radiator 40 is set in the scope below the above 0.6 quality % of 0.05 quality %, so the joint interface 30 side sections solution strengthening of metal level 13 (metallic plate 23) and radiator 40, can prevent to produce in metal level 13 (metallic plate 23) and the radiator 40 be full of cracks.Thus, can provide reliability the high power module substrate that carries radiator.
Then, use Fig. 6 to Fig. 9 that the power module substrate that carries radiator and the power model of the 2nd execution mode of the present invention are described.
This power model 101 possesses and has: power module substrate 110 is equipped with circuit layer 112; Semiconductor chip 3 is engaged in the surface of circuit layer 112 through layer 2; And radiator 140.
And ceramic substrate 111 is made up of the high AlN of insulating properties (aluminium nitride).
In addition, as shown in Figure 6, in this execution mode, the thickness setting of metal level 113 is the thickness that is thicker than circuit layer 112.
And; As shown in Figure 7, in the joint interface 130 of metal level 113 (metallic plate 123) and radiator 140, at metal level 113 (metallic plate 123) and radiator 140; Except Si, also solid solution has the interpolation element more than a kind or 2 kinds that is selected among Cu, Zn, Ge, Ag, Mg, Ca, Ga and the Li.In addition, in this execution mode, solid solution Ge is as adding element.
And; At circuit layer 112 (metallic plate 122) and the joint interface of ceramic substrate 111 and the joint interface of metal level 113 (metallic plate 123) and ceramic substrate 111; Except Si, also solid solution has the interpolation element more than a kind or 2 kinds that is selected among Cu, Zn, Ge, Ag, Mg, Ca, Ga and the Li.In addition, in this execution mode, solid solution Ge is as adding element.
At this,, be formed with Si concentration and Ge concentration along with leaving and the concentration dipping bed 133,134 that reduces gradually to laminating direction from joint interface 130 in joint interface 130 vicinity of metal level 113 and radiator 140.At this, the Si of joint interface 130 sides of this concentration dipping bed 133,134 (joint interface 130 vicinity of metal level 113 and radiator 140) is set in the scope below the above 6.5 quality % of 0.05 quality % with the total concentration of adding element (being Ge in this execution mode).
In addition, near Si concentration the joint interface 130 of metal level 113 and radiator 140 and Ge concentration are to analyze (spot diameter 30 μ m) at the mean value that carries out 5 mensuration apart from 50 μ m positions of joint interface 130 through EPMA.And the chart of Fig. 7 is in the width middle body of metal level 113 (metallic plate 123) and radiator 140 (top plate portion 141), to carry out linear analysis to laminating direction, and the chart of obtaining as benchmark with the concentration of said 50 μ m positions.
Below, with reference to Fig. 8 and Fig. 9 the manufacturing approach of the power module substrate that carries radiator of said structure is described.
(Si set operation S101)
At first, as shown in Figure 9, when forming 1Si layer 124, form 2Si layer 125 through the one side set Si that sputters at the metallic plate 123 that becomes metal level 113 through the one side set Si that sputters at the metallic plate 122 that becomes circuit layer 112.In addition, at this 1Si layer 124,2Si layer 125, except Si, also set has the interpolation element more than a kind or 2 kinds that is selected among Cu, Zn, Ge, Ag, Mg, Ca, Ga and the Li, in this execution mode, adopts Ge as adding element.
(ceramic substrate lamination operation S102)
Then, at the one side side laminated metal sheet 122 of ceramic substrate 111, and at the another side side laminated metal sheet 123 of ceramic substrate 111.At this moment, with the face that is formed with 2Si layer 125 of the face that is formed with 1Si layer 124 of metallic plate 122, metallic plate 123 mode laminated metal sheet 122,123 towards ceramic substrate 111.
(ceramic substrate heating process S103)
Then, with metallic plate 122, ceramic substrate 111, metallic plate 123 with to laminating direction pressurization (pressure 1～35kgf/cm
2) state pack into and heat in the vacuum furnace, form first motlten metal zone, second motlten metal zone respectively at the interface of metallic plate 122,123 and ceramic substrate 111.
At this, in this execution mode, the pressure in the vacuum furnace is set in 10
-6Pa above 10
-3In the scope below the Pa, heating-up temperature is set in more than 600 ℃ in the scope below 650 ℃.
(first motlten metal and second motlten metal solidify operation S104)
Then; Under the state that forms first motlten metal zone, second motlten metal zone, temperature is remained constant; Si in first motlten metal zone, the second motlten metal zone is spread to metallic plate 122,123 sides; Solidify in that temperature is remained under the constant state, engage ceramic substrate 111 and metallic plate 122,123.So, produce power module substrate 110.
(the Si layer forms operation S105/ radiator lamination operation S106)
Then, at the another side side set Si of the metal level 113 of power module substrate 110 and Ge and form Si layer 126.The Si amount of this Si layer 126 is set in 0.002mg/cm
2Above 1.2mg/cm
2Below, the Ge amount is set in 0.002mg/cm
2Above 2.5mg/cm
2Below.
And, through the another side side lamination radiator 140 of this Si layer 126 at metal level 113.
(radiators heat operation S107)
Then, with power module substrate 110 and radiator 140 with to laminating direction pressurization (pressure 1～35kgf/cm
2) state pack into and heat in the vacuum furnace, between metal level 113 and radiator 140, form the motlten metal zone.
At this, in this execution mode, the pressure in the vacuum furnace is set in 10
-6Pa above 10
-3In the scope below the Pa, heating-up temperature is set in more than 600 ℃ in the scope below 650 ℃.
(motlten metal solidifies operation S108)
Then, under the state that forms the motlten metal zone, temperature is remained constant.Like this, Si in the motlten metal zone and Ge are further to metal level 113 sides and the diffusion of radiator 140 sides.Thus, once Si concentration and the Ge concentration for the part in motlten metal zone descended gradually, and fusing point rises, and solidified in that temperature is remained under the constant state.So, be cooled to normal temperature after solidifying.
So, power module substrate 110 engages with radiator 140, and produces the power module substrate that carries radiator of this execution mode.
In the power module substrate that carries radiator and power model 101 of as above this execution mode of structure; Since through between radiator 140 and metal level 113 with Si set Ge together; Make these Si and Ge diffusion and form the motlten metal zone; Make Si and the further diffusion of Ge in the motlten metal zone and engage radiator 140 and power module substrate 110, so need not to use the solder paper tinsel.And, because at metal level 113 (metallic plate 123) directly set Si and Ge, so the total thickness that is present in radiator 140 and the oxide film at the interface of metal level 113 (metallic plate 123) is thinner when using the solder paper tinsel.Thus, oxide film can be positively removed, and the joint interface 130 generation spaces of metal level 113 (metallic plate 123) and radiator 140 can be suppressed at, thus the bond strength of raising metal level 113 (metallic plate 123) and radiator 140.
And; Owing to be except Si; Also add Ge, and make these Si and Ge diffusion and form the structure in motlten metal zone, so can reduce near the fusing point the joint interface 130 of radiator 140 and metal level 113; Even set the junction temperature among the radiators heat operation S107 for be lower than among the ceramic substrate heating process S103 junction temperature, also can engage radiator 140 and power module substrate 110.
In addition; In this execution mode; Because the thickness that constitutes metal level 113 is thicker than the thickness of circuit layer 112; So as benchmark, the rigidity of metal level 113 sides (promptly being provided with radiator 140 sides) is set at the rigidity that is higher than circuit layer 112 sides, the warpage of the power module substrate that carries radiator after can suppressing to engage with ceramic substrate 111.
Then, use Figure 10 to Figure 14 that the power module substrate that carries radiator and the power model of the 3rd execution mode of the present invention are described.
This power model 201 possesses and has: power module substrate 210 is equipped with circuit layer 212; Semiconductor chip 3 is engaged in the surface of circuit layer 212 through layer 2; And radiator 240.
In addition, ceramic substrate 211 is made up of the high AlN of insulating properties (aluminium nitride).
At this, this radiator 240 is through soldering top plate portion 241 and corrugated fin 246, corrugated fin 246 constitute with base plate 245 respectively.In this execution mode; Shown in figure 14; Top plate portion 241 and base plate 245 are made up of laminated aluminium plate; And being equipped with top plate portion 241 and base plate 245 towards the mode of corrugated fin 246 sides with knitting layer 241B, 245B, said laminated aluminium plate middle level is pressed with A3003 alloy system substrate layer 241A, 245A and A4045 alloy system knitting layer 241B, 245B.That is, become the substrate layer 241A and metal level 213 contacting structure of top plate portion 241.
And; Shown in figure 11; In the joint interface 230 of radiator 240 (the substrate layer 241A of top plate portion 241) and metal level 213 (metallic plate 223); At metal level 213 (metallic plate 223) and radiator 240 (the substrate layer 241A of top plate portion 241), except Si, also solid solution has the interpolation element more than a kind or 2 kinds that is selected among Cu, Zn, Ge, Ag, Mg, Ca, Ga and the Li.In addition, in this execution mode solid solution Ag as adding element.
And; In the joint interface of the joint interface of circuit layer 212 (metallic plate 222) and ceramic substrate 211 and metal level 213 (metallic plate 223) and ceramic substrate 211; Except Si, also solid solution has the interpolation element more than a kind or 2 kinds that is selected among Cu, Zn, Ge, Ag, Mg, Ca, Ga and the Li.In addition, in this execution mode solid solution Ag as adding element.
At this, be formed with the concentration dipping bed 233,234 that Si concentration and Ag concentration descend along with leaving from joint interface 230 gradually in joint interface 230 vicinity of metal level 213 and radiator 240.At this, near the Si of joint interface 230 sides of this concentration dipping bed 233,234 (joint interface 230 of metal level 213 and radiator 240) is set in the scope below the above 6.5 quality % of 0.05 quality % with the total concentration of adding element (being Ag in this execution mode).
In addition, the Si concentration of joint interface 230 vicinity of metal level 213 and radiator 240 and Ag concentration are to analyze (spot diameter 30 μ m) at the mean value that carries out 5 mensuration apart from 50 μ m positions of joint interface 230 through EPMA.And the chart of Figure 11 is that the width middle body at metal level 213 (metallic plate 223) and radiator 240 (top plate portion 241) carries out linear analysis to laminating direction, and the chart of obtaining as benchmark with the concentration of said 50 μ m positions.
Below, the manufacturing approach of the power module substrate that carries radiator of said structure is described.
(Si set operation S201)
At first, shown in figure 13, in the one side of the metallic plate that becomes circuit layer 212 222, when forming 1Si layer 224 through sputter set Si, in the one side of the metallic plate that becomes metal level 213 223, Si forms 2Si layer 225 through the sputter set.In addition, at this 1Si layer 224,2Si layer 225, except Si, also set has the interpolation element more than a kind or 2 kinds that is selected among Cu, Zn, Ge, Ag, Mg, Ca, Ga and the Li, in this execution mode, uses Ag as adding element.
At this, in this execution mode, the Si amount in 1Si layer 224, the 2Si layer 225 is set in 0.08mg/cm
2Above 2.7mg/cm
2Below.And the Ag amount is set in 0.08mg/cm
2Above 5.4mg/cm
2Below.
(ceramic substrate lamination operation S202)
Then, shown in figure 13, metallic plate 222 is laminated to the one side side of ceramic substrate 211, and metallic plate 223 is laminated to the another side side of ceramic substrate 211.At this moment, shown in figure 13, laminated metal sheet 222,223 is so that 225 formed on the 2Si layer of the 1Si layer 224 of metallic plate 222, metallic plate 223 is towards ceramic substrate 211.That is, get involved 1Si layer 224,2Si layer 225 respectively between metallic plate 222,223 and the ceramic substrate 211.
(ceramic substrate heating process S203)
Then, to laminating direction to metallic plate 222, ceramic substrate 211, the metallic plate 223 (pressure 1～35kgf/cm that pressurizes
2) state under with heating in its vacuum furnace of packing into, form first motlten metal zone, second motlten metal zone respectively at the interface of metallic plate 222,223 and ceramic substrate 211.
At this, in this execution mode, the pressure in the vacuum furnace is set in 10
-6Pa above 10
-3In the scope below the Pa, heating-up temperature is set in more than 600 ℃ in the scope below 650 ℃.
(first motlten metal and second motlten metal solidify operation S204)
Then, under the state that forms first motlten metal zone, second motlten metal zone, temperature is remained constant.Like this, Si and the Ag in first motlten metal zone, the second motlten metal zone will further spread to metallic plate 222,223 sides.Thus, once be that the Si concentration and the Ag concentration of the part in first motlten metal zone, second motlten metal zone descends gradually, fusing point rises, and solidifies in that temperature is remained under the constant state.Thus, ceramic substrate 211 engages with metallic plate 222,223, and produces power module substrate 210.
(the Si layer forms operation S205)
Then, at the another side of metal level 213, form Si layer 226 through sputter set Si and Ag.At this, in this execution mode, the Si amount in the Si layer 226 is set in 0.08mg/cm
2Above 2.7mg/cm
2Below, the Ag amount is set in 0.08mg/cm
2Above 5.4mg/cm
2Below.
(radiator lamination operation S206)
Then, shown in figure 14, in the another side side of the metal level 213 of power module substrate 210, lamination constitutes top plate portion 241, corrugated fin 246 and the base plate 245 of radiator 240.At this moment, laminate top board 241 and base plate 245 are so that the knitting layer 245B of the knitting layer 241B of top plate portion 241 and base plate 245 is towards corrugated fin 246 sides.And, between top plate portion 241 and corrugated fin 246, base plate 245 and corrugated fin 246, get involved for example with KAlF
4Solder flux (not shown) for principal component.
And, be configured to the top plate portion 241 of the face that is formed with Si layer 226 of metallic plate 223 towards radiator 240, between metallic plate 223 and radiator 240, get involved Si layer 226.
(radiators heat operation S207)
Then, to laminating direction to the (pressure 1～35kgf/cm that pressurizeed by the power module substrate 210 of lamination, top plate portion 241, corrugated fin 246 and base plate 245
2) state under pack into and heat in the atmosphere heating furnace, between the top plate portion 241 of metallic plate 223 and radiator 240, form the motlten metal zone.Simultaneously, between top plate portion 241 and corrugated fin 246, base plate 245 and corrugated fin 246, the melting metal layer of knitting layer 241B, 245B that formed fusion.
At this, in this execution mode, be nitrogen atmosphere in the atmosphere heating furnace, heating-up temperature is set in more than 550 ℃ in the scope below 630 ℃.
(motlten metal solidifies operation S208)
Then, under the state that forms the motlten metal zone, temperature is remained constant.Like this, Si in the motlten metal zone and Ag general is further spread to top plate portion 241 sides of metallic plate 223 sides and radiator 240.Thus, once Si concentration and the Ag concentration for the part in motlten metal zone reduced gradually, and fusing point rises, and solidified in that temperature is remained under the constant state.That is, the top plate portion 241 of radiator 240 engages through so-called diffusion bond (Transient Liquid Phase Diffusion Bonding) with metallic plate 223.So, after solidifying, be cooled to normal temperature.
And, through being set in formed melting metal layer between top plate portion 241 and corrugated fin 246, base plate 245 and the corrugated fin 246, soldering top plate portion 241 and corrugated fin 246, base plate 245 and corrugated fin 246.At this moment, be formed with oxide film, but remove these oxide films through said solder flux on the surface of top plate portion 241, corrugated fin 246, base plate 245.
So, when soldering top plate portion 241 and corrugated fin 246 form radiator 240 with base plate 245, engage this radiator 240 produces this execution mode with power module substrate 210 the power module substrate that carries radiator.
Be made as the power module substrate that carries radiator, carrying in the manufacturing approach of power module substrate of radiator like this execution mode of above structure; Between radiator 240 and metal level 213; With Si set Ag together; Through making these Si and Ag diffusion formation motlten metal zone; Make the further diffusion and engage radiator 240 and power module substrate 210 of Si and Ag in the metal melting zone,, also can positively engage radiator 240 and power module substrate 210 even therefore under condition than lower temperature.
At this; When forming radiator 240 through the soldering of using solder flux; In nitrogen atmosphere, engage, but in this execution mode, in the joint of radiator 240 and power module substrate 210, use Si and add element (Ag) with the temperature conditions below 630 ℃ more than 550 ℃; As previously mentioned; Can under cryogenic conditions, engage and in nitrogen atmosphere, engage, thereby when can engage radiator 240 and power model 210, produce radiator 240 through soldered joint top plate portion 241 and corrugated fin 246 and base plate 245.Thus, the manufacturing process that this carries the power module substrate of radiator can be omitted, and the reduction of cost of manufacture can be sought.
Then, use Figure 15 to Figure 18 that the power module substrate that carries radiator and the power model of the 4th execution mode of the present invention are described.
This power model 301 possesses and has: power module substrate 310 is equipped with circuit layer 312; Semiconductor chip 3 is engaged in the surface of circuit layer 312 through layer 2; And radiator 340.
In addition, ceramic substrate 311 is made up of the high AlN of insulating properties (aluminium nitride).
At this, this radiator 340 is through soldering top plate portion 341 and corrugated fin 346, corrugated fin 346 and base plate 345 constitute respectively.
And; In the joint interface of top plate portion of radiator 340 341 and metal level 313 (metallic plate 323); At metal level 313 (metallic plate 323) and top plate portion 341, except Si, also solid solution has the interpolation element more than a kind or 2 kinds that is selected among Cu, Zn, Ge, Ag, Mg, Ca, Ga and the Li.In addition, solid solution has Ag as adding element in this execution mode.
And; In the joint interface of the joint interface of circuit layer 312 (metallic plate 322) and ceramic substrate 311 and metal level 313 (metallic plate 323) and ceramic substrate 311; Except Si also solid solution the interpolation element more than a kind or 2 kinds that is selected among Cu, Zn, Ge, Ag, Mg, Ca, Ga and the Li is arranged, solid solution has Ag in this execution mode.
Below the manufacturing approach of the power module substrate that carries radiator of said structure is described.
(fixation layer forms operation S301)
At first, shown in figure 17, in the one side of the metallic plate that becomes circuit layer 312 322, when forming 1Si layer 324 through sputter set Si, in the one side of the metallic plate that becomes metal level 313 323, Si forms 2Si layer 325 through the sputter set.In addition, the another side at metallic plate 323 also forms Si layer 326 through sputter set Si.
In addition, at this 1Si layer 324,2Si layer 325, Si layer 326, except Si, also solid solution has the interpolation element more than a kind or 2 kinds that is selected among Cu, Zn, Ge, Ag, Mg, Ca, Ga and the Li, uses Ag as adding element in this execution mode.
At this, in this execution mode, the Si amount in 1Si layer 324,2Si layer 325, the Si layer 326 is set in 0.08mg/cm
2Above 2.7mg/cm
2Below.And the Ag amount is set in 0.08mg/cm
2Above 5.4mg/cm
2Below.
(lamination S302)
Then, shown in figure 17, metallic plate 322 is laminated to the one side side of ceramic substrate 311, and, metallic plate 323 is laminated to the another side side of ceramic substrate 311.At this moment, shown in figure 17, laminated metal sheet 322,323 is so that the face of 2Si layer 325 of 1Si layer 324, metallic plate 323 that is formed with metallic plate 322 is towards ceramic substrate 311.
And, at the one side side lamination configuration top plate portion 341 of the Si layer 326 that is formed with metallic plate 323.
(heating process S303)
Then, with metallic plate 322, ceramic substrate 311, metallic plate 323, top plate portion 341 to laminating direction pressurization (pressure 1～35kgf/cm
2) state; Pack into and heat in the vacuum furnace; When the interface of metallic plate 322,323 and ceramic substrate 311 forms first motlten metal zone, second motlten metal zone respectively, between metallic plate 323 and top plate portion 341, form the motlten metal zone.
At this, in this execution mode, the pressure in the vacuum furnace is set in 10
-6Pa above 10
-3In the scope below the Pa, heating-up temperature is set in more than 600 ℃ in the scope below 650 ℃.
(motlten metal solidifies operation S304)
Then, under the state that is formed with first motlten metal zone, second motlten metal zone, temperature is remained constant.Like this, Si and the Ag in first motlten metal zone, the second motlten metal zone will further spread to metallic plate 322,323 sides.Like this, once be that the Si concentration and the Ag concentration of the part in first motlten metal zone, second motlten metal zone reduces gradually, fusing point rises, and solidifies in that temperature is remained under the constant state.Thus, engage ceramic substrate 311 and metallic plate 322,323.
And, under the state that is formed with the motlten metal zone, temperature is remained constant.Like this, Si in the motlten metal zone and Ag are to metallic plate 323 and the diffusion of top plate portion 341 sides.Like this, once Si concentration and the Ag concentration for the part in motlten metal zone descended gradually, and fusing point rises, and solidified in that temperature is remained under the constant state.Thus, bonding metal plates 323 and top plate portion 341.
(fin lamination S305)
Then, shown in figure 18, in the another side side of top plate portion 341, lamination solder paper tinsel 347 (for example low melting point alloy foil such as Al-10%Si Alloy Foil), corrugated fin 346, base plate 345.At this moment, lamination base plate 345 is so that the knitting layer 345B of base plate 345 is towards corrugated fin 346 sides.And between top plate portion 341 and corrugated fin 346, base plate 345 and corrugated fin 346, getting involved for example is the solder flux (not shown) of principal component with KAlF4.
(soldering operation S306)
Then, with top plate portion 341, corrugated fin 346 and base plate 345 to laminating direction pressurization (pressure 1～35kgf/cm
2) state, heat in the atmosphere of packing into the heating furnace, between top plate portion 341 and corrugated fin 346, base plate 345 and corrugated fin 346, the melting metal layer of formed fusion solder paper tinsel 347 and knitting layer 345B.
At this, in this execution mode, be nitrogen atmosphere in the atmosphere heating furnace, heating-up temperature is set in more than 550 ℃ in the scope below 630 ℃.
And, through cooling, solidify the melting metal layer that is formed between top plate portion 341 and corrugated fin 346, base plate 345 and the corrugated fin 346, and soldering top plate portion 341 and corrugated fin 346, base plate 345 and corrugated fin 346.At this moment, be formed with oxide film, but remove these oxide films through said solder flux on the surface of top plate portion 341, corrugated fin 346, base plate 345.
So, make the power module substrate that carries radiator of this execution mode.
Be made as the power module substrate that carries radiator of as above this execution mode of structure, carrying in the manufacturing approach of power module substrate of radiator; Between the top plate portion 341 and metal level 313 of radiator 340; With Si set Ag together; Through making these Si and Ag diffusion formation motlten metal zone, Si and Ag in the motlten metal zone are further spread, and engage the top plate portion 341 and power module substrate 310 of radiator 340; Even therefore under condition, also can positively engage the top plate portion 341 and power module substrate 310 of radiator 340 than lower temperature.
More than, execution mode of the present invention is illustrated, but the present invention is not limited thereto, in the scope that does not break away from its invention technological thought, can suitably change.
For example, it is that 99.99% fine aluminium calendering plate is illustrated that the metallic plate of forming circuit layer and metal level is made as by purity, but is not limited thereto, and also can be that purity is 99% aluminium (2N aluminium).
And, be illustrated constituting ceramic substrate, but be not limited thereto by AlN, also can be by Si
3N
4, Al
2O
3Wait other potteries to constitute.
In addition, in the 2nd, the 3rd, the 4th execution mode, in the Si layer forms operation, with Si together set Ge or Ag be illustrated as adding element, but be not limited thereto.As add element, also can use be selected among Cu, Zn, Ge, Ag, Mg, Ca, Ga and the Li more than a kind or 2 kinds.At this, Si amounts to the set amount of adding element and preferably is located at 0.002mg/cm
2Above 10mg/cm
2Below.
In addition; In the Si layer forms operation, the structure at the another side set Si of the metallic plate that becomes metal level is illustrated, but is not limited thereto; Can also can distinguish set Si at the composition surface of radiator set Si on the composition surface of radiator and the another side of metallic plate.
And, in the Si layer forms operation, to being illustrated, but being not limited thereto through sputter set Si, also available plating, vapor deposition, CVD, cold spraying or coating are dispersed with set Si such as paste and the ink of powder.
In addition, in the Si layer forms operation, can be made as the structure of set Al together with Si.
And, in this execution mode, the structure that on radiator, engages 1 power module substrate is illustrated, but is not limited thereto, also can on 1 radiator, engage a plurality of power module substrates.
And, in the 1st, the 2nd execution mode, the joint that uses vacuum furnace to carry out radiator and metal level (metallic plate) is illustrated, but is not limited thereto, also can be at N
2Carry out the joint of radiator and metal level (metallic plate) in atmosphere, Ar atmosphere and the He atmosphere etc.
In addition, be illustrated not using solder joint ceramic substrate and metallic plate, but be not limited thereto, also can use and adopt solder to engage the power module substrate of ceramic substrate and metallic plate.
And; In the 3rd execution mode; Top plate portion and base plate be made up of the lamination aluminium that possesses substrate layer and knitting layer be illustrated; But be not limited thereto, corrugated fin also can be made up of the cladding material that core that for example is made up of A3003 and two sides with this core possess the knitting layer that is made up of A4045.At this moment, top plate portion and base plate can be used pure aluminum plate.
And the material of top plate portion, corrugated fin, base plate is not limited to this execution mode.
In addition, comprise the shape of corrugated fin etc., the structure of radiator also is not limited to this execution mode.For example, also can only the top plate portion in the 3rd, the 4th execution mode be engaged in power module substrate as heating panel.
In addition, shown in figure 19, can be with second metallic plate 413 structure of a plurality of metallic plate 413A, 413B that has been made as lamination.At this moment, the metallic plate 413A that is arranged in a side (Figure 19 is a upside) in second metallic plate 413 is engaged in ceramic substrate 411, and the metallic plate 413B that is arranged in opposite side (Figure 19 is a downside) is engaged in the top plate portion 441 of radiator 440.And, between the top plate portion 441 of the metallic plate 413B of opposite side and radiator 440, form the Si layer, be positioned at the metallic plate 413B of opposite side and the top plate portion 441 of radiator 440 thereby engage.At this, can be constituted second metallic plate 413 each other by the metallic plate 413A of lamination, 413B through Si layer joint.In addition, among Figure 19, lamination 2 metallic plate 413A, 413B, but the sheet number and the indefinite of lamination.And shown in figure 19, the metallic plate of lamination size, shape each other can be different, also can be adjusted to identical size, shape.In addition, the composition of these metallic plates can be different.
Claims (13)
1. manufacturing approach that carries the power module substrate of radiator, the said power module substrate that carries radiator possesses: ceramic substrate; First metallic plate is made up of and one side is engaged in the surface of this ceramic substrate aluminium; Second metallic plate is made up of and one side is engaged in the back side of said ceramic substrate aluminium; And radiator, by aluminum or aluminum alloy constitute and be engaged in the another side of this second metallic plate, the face of the opposition side of the said one side that promptly engages with said ceramic substrate, it is characterized in that having:
Ceramic substrate engages operation, engages said ceramic substrate and said first metallic plate, and engages said ceramic substrate and said second metallic plate; And
Radiator engages operation, engages said radiator at the another side of said second metallic plate,
Said radiator engages operation to have:
The Si layer forms operation, at least one side's set Si in the composition surface of the another side of said second metallic plate and said radiator and form the Si layer;
Radiator lamination operation, through said Si layer, said second metallic plate of lamination and said radiator;
The radiators heat operation will be heated when laminating direction pressurizes by said second metallic plate and the said radiator of lamination, form the motlten metal zone at the interface of said second metallic plate and said radiator; And
Motlten metal solidifies operation, engages said second metallic plate and said radiator through solidifying this motlten metal zone,
In said radiators heat operation, spread to said second metallic plate and said radiator through the Si that makes said Si layer, thereby form said motlten metal zone at the interface of said second metallic plate and said radiator.
2. the manufacturing approach that carries the power module substrate of radiator as claimed in claim 1 is characterized in that,
Form in the operation at said Si layer, at least one side in the composition surface of the another side of said second metallic plate and said radiator, except Si, also set is selected from the interpolation element more than a kind or 2 kinds among Cu, Zn, Ge, Ag, Mg, Ca, Ga and the Li.
3. according to claim 1 or claim 2 the manufacturing approach of the power module substrate that carries radiator is characterized in that,
Form in the operation at said Si layer, with Si set Al together.
4. according to claim 1 or claim 2 the manufacturing approach of the power module substrate that carries radiator is characterized in that,
Said ceramic substrate engages operation to have:
Metal set operation; At least one side in the composition surface of the composition surface of the said ceramic substrate at the joint interface place of said ceramic substrate and said first metallic plate and said first metallic plate; Among set Cu or the Si more than a kind and form the 1st metal level; And at least one side in the composition surface of the composition surface of the said ceramic substrate at the joint interface place of said ceramic substrate and said second metallic plate and said second metallic plate, among set Cu or the Si more than a kind and form the 2nd metal level;
Ceramic substrate lamination operation is in the time of through said said ceramic substrate of the 1st metal level lamination and said first metallic plate, through said said ceramic substrate of the 2nd metal level lamination and said second metallic plate;
The ceramic substrate heating process; To when laminating direction pressurizes, be heated by said first metallic plate of lamination, said ceramic substrate and said second metallic plate, form first motlten metal zone and second motlten metal zone at the interface of said first metallic plate and said ceramic substrate and the interface of said ceramic substrate and said second metallic plate; And
First motlten metal and second motlten metal solidify operation, through solidifying this first motlten metal zone and second motlten metal zone, engage said first metallic plate and said ceramic substrate and said ceramic substrate and said second metallic plate,
In said ceramic substrate heating process; Be spread in said first metallic plate and said second metallic plate more than a kind among Cu through making said the 1st metal level and said the 2nd metal level or the Si, form said first motlten metal zone and said second motlten metal zone at the interface of said first metallic plate and said ceramic substrate and the interface of said ceramic substrate and said second metallic plate.
5. according to claim 1 or claim 2 the manufacturing approach of the power module substrate that carries radiator is characterized in that,
Carry out said ceramic substrate joint operation simultaneously and engage operation with said radiator.
6. according to claim 1 or claim 2 the manufacturing approach of the power module substrate that carries radiator is characterized in that,
Said Si layer forms operation and is dispersed with the paste and the ink of powder through plating, vapor deposition, CVD, sputter, cold spraying or through coating, at least one side's set Si in the another side of the composition surface of said radiator and said second metallic plate.
7. according to claim 1 or claim 2 the manufacturing approach of the power module substrate that carries radiator is characterized in that,
Said second metallic plate is made up of a plurality of metallic plate laminations.
8. power module substrate that carries radiator possesses:
Ceramic substrate;
First metallic plate is made up of and one side is engaged in the surface of this ceramic substrate aluminium;
Second metallic plate is made up of and one side is engaged in the back side of said ceramic substrate aluminium; And
Radiator, by aluminum or aluminum alloy constitute and be engaged in the another side of this second metallic plate, the face of the opposition side of the said one side that promptly engages with said ceramic substrate, it is characterized in that,
Solid solution has Si in said second metallic plate and the said radiator, and the Si concentration of the joint interface vicinity of said second metallic plate and said radiator is set in the scope below the above 0.6 quality % of 0.05 quality %.
9. the power module substrate that carries radiator as claimed in claim 8 is characterized in that,
In said second metallic plate and said radiator, except Si, also solid solution has the interpolation element more than a kind or 2 kinds that is selected among Cu, Zn, Ge, Ag, Mg, Ca, Ga and the Li.
10. like claim 8 or the 9 described power module substrates that carry radiator, it is characterized in that,
In the joint interface vicinity of said first metallic plate and said ceramic substrate or the joint interface vicinity of said second metallic plate and said ceramic substrate; In Cu or Si more than a kind, also solid solution has the interpolation element more than a kind or 2 kinds that is selected among Cu, Zn, Ge, Ag, Mg, Ca, Ga and the Li.
11. like claim 8 or the 9 described power module substrates that carry radiator, it is characterized in that,
The thickness setting of said second metallic plate is the thickness more than or equal to said first metallic plate.
12. like claim 8 or the 9 described power module substrates that carry radiator, it is characterized in that,
Said second metallic plate is made up of a plurality of metallic plate laminations.
13. a power model is characterized in that possessing:
Like each the described power module substrate that carries radiator in the claim 8 to 12; And
Be equipped on the electronic component on this power module substrate that carries radiator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110043034.5A CN102646604B (en) | 2011-02-18 | Carry the power module substrate of radiator and manufacture method thereof and power model |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110043034.5A CN102646604B (en) | 2011-02-18 | Carry the power module substrate of radiator and manufacture method thereof and power model |
Publications (2)
| Publication Number | Publication Date |
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| CN102646604A true CN102646604A (en) | 2012-08-22 |
| CN102646604B CN102646604B (en) | 2016-12-14 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110169211A (en) * | 2017-01-13 | 2019-08-23 | 三菱电机株式会社 | Metal-ceramic engages substrate and its manufacturing method |
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| US20040022029A1 (en) * | 2000-08-09 | 2004-02-05 | Yoshiyuki Nagatomo | Power module and power module with heat sink |
| WO2009148168A1 (en) * | 2008-06-06 | 2009-12-10 | 三菱マテリアル株式会社 | Substrate for power module, power module, and method for producing substrate for power module |
| CN101861647A (en) * | 2007-11-19 | 2010-10-13 | 三菱综合材料株式会社 | Process for producing substrate for power module, substrate for power module, and power module |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20040022029A1 (en) * | 2000-08-09 | 2004-02-05 | Yoshiyuki Nagatomo | Power module and power module with heat sink |
| CN101861647A (en) * | 2007-11-19 | 2010-10-13 | 三菱综合材料株式会社 | Process for producing substrate for power module, substrate for power module, and power module |
| WO2009148168A1 (en) * | 2008-06-06 | 2009-12-10 | 三菱マテリアル株式会社 | Substrate for power module, power module, and method for producing substrate for power module |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110169211A (en) * | 2017-01-13 | 2019-08-23 | 三菱电机株式会社 | Metal-ceramic engages substrate and its manufacturing method |
| CN110169211B (en) * | 2017-01-13 | 2022-02-18 | 三菱电机株式会社 | Metal-ceramic bonded substrate and method for producing same |
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