CN102655126A - Power module, substrate provided with heat radiator and used for power module and manufacturing method of substrate - Google Patents
Power module, substrate provided with heat radiator and used for power module and manufacturing method of substrate Download PDFInfo
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- CN102655126A CN102655126A CN201110051637XA CN201110051637A CN102655126A CN 102655126 A CN102655126 A CN 102655126A CN 201110051637X A CN201110051637X A CN 201110051637XA CN 201110051637 A CN201110051637 A CN 201110051637A CN 102655126 A CN102655126 A CN 102655126A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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Abstract
The invention provides a substrate for a power module, the power module with the substrate and a manufacturing method of the substrate for the power module, wherein the substrate has metal plates and a ceramic substrate which are jointed definitely and has high heat circulation reliability. According to the substrate (10) for the power module, the surface of the ceramic substrate (11) is laminated and jointed with aluminum metal plates (12 and 13). The substrate is characterized in that besides Si, one or more than two adding elements selected from Zn, Ge, Ag, Mg, Ca, Ga and Li are solidly dissolved in the metal plates (12 and 13), the sum of the Si concentration near an interface of the ceramic substrate (11) and the concentration of the adding elements is set to be higher than 0.05 percent by mass and lower than 5 percent by mass.
Description
Technical field
The present invention relates to a kind of power module substrate, the power module substrate that carries radiator that uses in big electric current, the high-tension semiconductor device, manufacturing approach that possesses power model and this power module substrate of this power module substrate controlled.
Background technology
Because the caloric value that in semiconductor element, is used for the power component that electric power supplies with is than higher; So as the substrate that carries this power component; For example; Shown in patent documentation 1, use following power module substrate: on the ceramic substrate that constitutes by AlN (aluminium nitride), Al (aluminium) metallic plate is arranged through the solder joint.
And this metal plate shape becomes circuit layer, on its metallic plate, is equipped with power component (semiconductor element) through scolder.
In addition, proposing has following content: in order to dispel the heat, below ceramic substrate, also to engage metallic plate such as Al and be made as metal level, and whole through this layer of metal bonded power module substrate on heating panel.
And; As the means that form circuit layer, after the bonding metal plates, forming on this metallic plate outside the method for circuit pattern except proposing to have on ceramic substrate; For example open like patent documentation 2, also propose to have the sheet metal that is pre-formed to circuit pattern is engaged in the method on the ceramic substrate.
At this, in order to obtain as the metallic plate of said circuit layer and said metal level and the good bond strength of ceramic substrate, the surface roughness that for example in following patent documentation 3, discloses ceramic substrate is made as the technology less than 0.5 μ m.
Patent documentation 1: the open 2003-086744 communique of Japan Patent
Patent documentation 2: the open 2008-311294 communique of Japan Patent
Patent documentation 3: the openly flat 3-234045 communique of Japan Patent
But when metallic plate is engaged in ceramic substrate, have following problem points: the roughness that only reduces ceramic base plate surface can not obtain fully high bond strength, can not seek the raising of reliability.For example, recognize and to know, the surface of ceramic substrate is carried out based on Al with dry type
2O
3The milled processed of particle even surface roughness is made as Ra=0.2 μ m, also produces interface peel sometimes in disbonded test.And, have following situation:, still produce interface peel equally even surface roughness is made as below the Ra=0.1 μ m through polishing.
Especially; In the miniaturization of carrying out power model, thin-walled property, its environment for use is also severe day by day, has the big trend of heating quantitative change from the electronic components such as semiconductor element that carried recently; As previously mentioned, need on heating panel, set power module substrate.At this moment; Because of receiving heating panel, limits power module substrate, so when thermal cycle was loaded, great shear forces acted on the joint interface of metallic plate and ceramic substrate; With compared in the past, require the raising of the bond strength between ceramic substrate and the metallic plate and the raising of reliability more.
Summary of the invention
The present invention In view of the foregoing accomplishes, and its purpose is power module substrate, the power module substrate that carries radiator that provides a kind of certain bonding metal plates and ceramic substrate and thermal cycle reliability high, the manufacturing approach that possesses power model and this power module substrate of this power module substrate.
In order to solve this problem and to realize said purpose, power module substrate of the present invention, engaging in the surface laminated of ceramic substrate has the aluminum metallic plate; It is characterized in that; In said metallic plate, except Si, also solid solution has the interpolation element more than a kind or 2 kinds that is selected among Zn, Ge, Ag, Mg, Ca, Ga and the Li; In the said metallic plate, amount to the concentration of the Si of the near interface of said ceramic substrate and said interpolation element and to be set in more than the 0.05 quality % in the scope below the 5 quality %.
In the power module substrate of this structure; Because in said metallic plate; Except Si, also solid solution has the interpolation element more than a kind or 2 kinds that is selected among Zn, Ge, Ag, Mg, Ca, Ga and the Li, therefore makes the joint interface side sections solution strengthening of metallic plate.Thus, breaking of sheet metal part office can be prevented, joint reliability can be improved.
At this, because in said metallic plate, add up to more than the 0.05 quality %, so the joint interface side sections of solution strengthening metallic plate positively with the Si of the near interface of said ceramic substrate and the concentration of said interpolation element.And; In the said metallic plate; Add up to below the 5 quality % with the Si of the near interface of said ceramic substrate and the concentration of said interpolation element, too uprise, on this power module substrate during the load cold cycling so can prevent the intensity of the joint interface of metallic plate; Can absorb thermal stress by metallic plate, and can prevent breaking of ceramic substrate etc.
At this, said ceramic substrate is by AlN or Al
2O
3Constitute, at the joint interface of said metallic plate and said ceramic substrate, also can be formed with Si concentration is the Si high concentration portion more than 5 times of Si concentration in the said metallic plate.
At this moment, owing to be formed with the Si high concentration portion more than 5 times that Si concentration is Si concentration in the said metallic plate, improve by AlN or Al through the Si atom that is present in joint interface at the joint interface of said metallic plate and said ceramic substrate
2O
3The ceramic substrate that constitutes and the bond strength of aluminum metallic plate.In addition, at this, the Si concentration in the metallic plate is meant, in metallic plate from the Si concentration of joint interface away from the part of certain distance (for example, more than the 50nm).
And also can be for as follows: said ceramic substrate be by AlN or Si
3N
4Constitute, be formed with oxygen concentration at the joint interface of said metallic plate and said ceramic substrate and be higher than the oxygen high concentration portion that reaches the oxygen concentration in the said ceramic substrate in the said metallic plate, the thickness of this oxygen high concentration portion is below the 4nm.
At this moment, because by AlN or Si
3N
4The ceramic substrate that constitutes and the joint interface of aluminum metallic plate are formed with oxygen concentration and are higher than the oxygen high concentration portion that reaches the oxygen concentration in the said ceramic substrate in the said metallic plate, so improve by AlN or Si through the oxygen that is present in joint interface
3N
4The ceramic substrate that constitutes and the bond strength of aluminum metallic plate.In addition, because the thickness of this oxygen high concentration portion is below the 4nm, the stress in the time of therefore can suppressing through the load thermal cycle is created in the crackle of oxygen high concentration portion.
In addition, at this, in the metallic plate and ceramic substrate in oxygen concentration be meant, in metallic plate and the ceramic substrate from the oxygen concentration of joint interface away from the part of certain distance (for example, more than the 50nm).
The power module substrate that carries radiator of the present invention is characterised in that to possess the radiator of said power module substrate and this power module substrate of cooling.
According to the power module substrate that carries radiator of this structure, owing to possess the radiator of cooling power module with substrate arranged, so can be through the effective cooling power module of radiator with the heat that produces in the substrate.
Power model of the present invention is characterised in that to possess said power module substrate and be equipped on the electronic component on this power module substrate.
According to the power model of this structure, the bond strength of ceramic substrate and metallic plate is high, even under the environment for use of sternness, also can leap and improve its reliability.
The manufacturing approach of power module substrate of the present invention; It is characterized in that having: the set operation for engage the manufacturing approach of the power module substrate that the aluminum metallic plate is arranged in the surface laminated of ceramic substrate; At least one side in the composition surface of the composition surface of said ceramic substrate and said metallic plate; Except Si, also set is selected from the interpolation element more than a kind or 2 kinds of Zn, Ge, Ag, Mg, Ca, Ga and Li kind, forms the fixation layer that contains Si and said interpolation element; Lamination, through said fixation layer, said ceramic substrate of lamination and said metallic plate; Heating process will be heated when laminating direction pressurizes by the said ceramic substrate of lamination and said metallic plate, form the motlten metal zone at the interface of said ceramic substrate and said metallic plate; And solidify operation, and engage said ceramic substrate and said metallic plate through solidifying this motlten metal zone, wherein in said set operation, make Si and said interpolation element at 0.1mg/cm
2Above 10mg/cm
2Get involved interface in the following scope at said ceramic substrate and said metallic plate; In said heating process; Si and said interpolation element through making said fixation layer spread to said metallic plate side, form said motlten metal zone at the interface of said ceramic substrate and said metallic plate.
Manufacturing approach according to the power module substrate of this structure; Owing to possess and have: at least one side in the composition surface of the composition surface of said ceramic substrate and said metallic plate; Except Si; Also set is selected from the interpolation element more than a kind or 2 kinds among Zn, Ge, Ag, Mg, Ca, Ga and the Li, forms the set operation of the fixation layer contain Si and said interpolation element, so at the joint interface of said metallic plate and said ceramic substrate; Except Si, also getting involved has the interpolation element more than a kind or 2 kinds that is selected among Zn, Ge, Ag, Mg, Ca, Ga and the Li.At this, because the element of Si and Zn, Ge, Ag, Mg, Ca, Ga and Li and so on is the element of the fusing point of reduction aluminium, therefore comparing under the cryogenic conditions, can form the motlten metal zone at the interface of metallic plate and ceramic substrate.
Thereby, even under than the engaging condition of lower temperature, short time, engage, also can secure engagement ceramic substrate and metallic plate.
And; In heating process; Spread to said metallic plate side through Si that makes fixation layer and the interpolation element more than a kind or 2 kinds that is selected among Zn, Ge, Ag, Mg, Ca, Ga and the Li; Form said motlten metal zone at the interface of said ceramic substrate and said metallic plate; And solidify this motlten metal zone, thus become the structure that engages said metallic plate and said ceramic substrate, so need not to use solder paper tinsel etc. just can make the power module substrate that metallic plate and ceramic substrate engage really with low cost.
So; Do not use the solder paper tinsel just can engage said ceramic substrate and said metallic plate, so need not to carry out the positioning work etc. of solder paper tinsel, for example; When being pre-formed sheet metal for circuit pattern shape and being engaged in ceramic substrate, also can be with waiting the trouble that causes prevent trouble before it happens by dislocation.
And, in said set operation, be made as 0.1mg/cm with getting involved in the Si at the interface of said ceramic substrate and said metallic plate and the set amount of said interpolation element
2More than, therefore at the interface of ceramic substrate and metallic plate, can positively form the motlten metal zone, and can securely engage ceramic substrate and metallic plate.
In addition, be made as 10mg/cm with getting involved in the Si at the interface of said ceramic substrate and said metallic plate and the set amount of said interpolation element
2Below, therefore can prevent in fixation layer, to crack, and can positively form the motlten metal zone at the interface of ceramic substrate and metallic plate.In addition, can prevent that Si and said interpolation element are too to metallic plate side diffusion and the intensity of the metallic plate of near interface too uprises.Thus, when power module substrate load cold cycling, can absorb thermal stress by metallic plate, and can prevent breaking of ceramic substrate etc.
In addition, in said set operation, make Si and said interpolation element at 0.1mg/cm
2Above 10mg/cm
2Get involved in the interface of said ceramic substrate and said metallic plate in the following scope; Therefore can make following power module substrate: in said metallic plate, amount to more than 0.05 quality % in the scope below the 5 quality % with the concentration of the Si of the near interface of said ceramic substrate and said interpolation element.
And, owing on metallic plate and ceramic substrate, directly form fixation layer, so oxide film only is formed on the surface of metallic plate.So, compare when having used the solder paper tinsel that forms oxide film on the two sides, be present in the total thickness attenuation of oxide film at the interface of metallic plate and ceramic substrate, therefore can improve the rate of finished products of initial engagement.
In addition; Become following structure: direct set Si of at least one side and said interpolation element in the composition surface of the composition surface of said ceramic substrate and said metallic plate; But consider from productive viewpoint, preferably at the composition surface of metallic plate set Si and said interpolation element.
And, can be at least one side in the composition surface of the composition surface of said ceramic substrate and said metallic plate, independent respectively set Si and said interpolation element and form the Si layer and add the element layer.Perhaps, also can be at least one side in the composition surface of the composition surface of said ceramic substrate and said metallic plate, set Si and said interpolation element and form the fixation layer of Si and said interpolation element simultaneously.
At this, in the said set operation, preferably become and Si and the said interpolation element structure of set Al together.
At this moment since with Si and said interpolation element set Al together, therefore formed fixation layer contains Al, in heating process, preferentially fusion and form the motlten metal zone really of this fixation layer, and can securely engage ceramic substrate and metallic plate.And, can prevent the oxidation of oxidation activity elements such as Mg, Ca, Li.In addition, for Si and said interpolation element set Al together, vapor deposition Si and said interpolation element and Al also can carry out sputter as target with the alloy of Si and said interpolation element and Al simultaneously.In addition, but also lamination Si and add element and Al.
And; Said set operation preferably is dispersed with paste and the ink etc. of powder through plating, vapor deposition, CVD, sputter, cold spraying or through coating, at least one side's set Si and said interpolation element in the composition surface of the composition surface of said ceramic substrate and said metallic plate.
At this moment; Owing to be dispersed with paste and the ink etc. of powder through plating, vapor deposition, CVD, sputter, cold spraying or through coating; Si and said interpolation element are bonded at least one side in the composition surface of composition surface and said metallic plate of said ceramic substrate really, therefore Si and said interpolation element are got involved in the joint interface of ceramic substrate and metallic plate really.And, but high accuracy is regulated the set amount of Si and said interpolation element, and can form the motlten metal zone really and securely engage ceramic substrate and metallic plate.
According to the present invention, metallic plate and ceramic substrate engages really and the thermal cycle reliability is high power module substrate can be provided, carry radiator power module substrate, possess the manufacturing approach of power model and this power module substrate of this power module substrate.
Description of drawings
Fig. 1 is to use the brief description figure of power model of the power module substrate of the 1st execution mode of the present invention.
Fig. 2 is circuit layer and the Si concentration of metal level and the key diagram of interpolation concentration of element of the power module substrate of expression the 1st execution mode of the present invention.
Fig. 3 is the sketch map of circuit layer and metal level (metallic plate) and the joint interface of ceramic substrate of the power module substrate of the 1st execution mode of the present invention.
Fig. 4 is the flow chart of manufacturing approach of the power module substrate of expression the 1st execution mode of the present invention.
Fig. 5 is the key diagram of manufacturing approach of the power module substrate of expression the 1st execution mode of the present invention.
Fig. 6 is near the key diagram the joint interface of metallic plate and ceramic substrate in the presentation graphs 5.
Fig. 7 is circuit layer and the Si concentration of metal level and the key diagram of interpolation concentration of element of the power module substrate of expression the 2nd execution mode of the present invention.
Fig. 8 is the sketch map of circuit layer and metal level (metallic plate) and the joint interface of ceramic substrate of the power module substrate of the 2nd execution mode of the present invention.
Fig. 9 is the flow chart of manufacturing approach of the power module substrate of expression the 2nd execution mode of the present invention.
Figure 10 is the key diagram of manufacturing approach of the power module substrate of expression the 2nd execution mode of the present invention.
Symbol description
The 1-power model, 3-semiconductor chip (electronic component), 10-power module substrate; 11,111-ceramic substrate, 12, the 112-circuit layer, 13, the 113-metal level; 22,23,122, the 123-metallic plate, 24, the 25-fixation layer, 26,27,126,127-motlten metal zone; 30,130-joint interface, 124A, 125A-Si layer, 124B, 125B-add the element layer.
Embodiment
Below, with reference to accompanying drawing execution mode of the present invention is described.Power module substrate, the power module substrate that carries radiator and the power model of expression the 1st execution mode of the present invention among Fig. 1.
This power model 1 possesses and has: power module substrate 10 is equipped with circuit layer 12; Semiconductor chip 3 is engaged in the surface of circuit layer 12 through layer 2; And radiator 4.At this, the scolder that layer 2 for example for Sn-Ag system, Sn-In system or Sn-Ag-Cu is.In addition, in this execution mode, be provided with Ni coating (not shown) between circuit layer 12 and the layer 2.
As shown in Figure 5, circuit layer 12 engages the metallic plate 22 with conductivity through the one side at ceramic substrate 11 and forms.In this execution mode, circuit layer 12 is through being that metallic plate 22 that aluminium (so-called 4N aluminium) the calendering plate more than 99.99% constitutes is engaged in ceramic substrate 11 and forms by purity.
As shown in Figure 5, metal level 13 forms through the another side bonding metal plates 23 at ceramic substrate 11.In this execution mode, metal level 13 and circuit layer 12 are equally through being that the metallic plate 23 of aluminium (so-called 4N aluminium) the calendering plate formation 99.99% or more is engaged in ceramic substrate 11 and forms by purity.
And, in this execution mode, be provided with by aluminum or aluminum alloy between the top plate portion 5 of radiator 4 and the metal level 13 or contain the resilient coating 15 that the composite material (for example AlSiC etc.) of aluminium constitutes.
And; As shown in Figure 2; In the Width central portion of ceramic substrate 11 and the joint interface 30 of circuit layer 12 (metallic plate 22) and metal level 13 (metallic plate 23); In circuit layer 12 (metallic plate 22) and metal level 13 (metallic plate 23), except Si, also solid solution has the interpolation element more than a kind or 2 kinds that is selected among Zn, Ge, Ag, Mg, Ca, Ga and the Li.The concentration that is formed with Si concentration and said interpolation element in the vicinity of the joint interface 30 of circuit layer 12 and metal level 13 is along with leaving and the concentration dipping bed 33 that reduces to laminating direction from joint interface 30.At this, near the Si of joint interface 30 sides of this concentration dipping bed 33 (joint interface 30 of circuit layer 12 and metal level 13) and the concentration of said interpolation element amount in the scope that is set in below the above 5 quality % of 0.05 quality %.
In addition, the concentration of near Si the joint interface 30 of circuit layer 12 and metal level 13 and said interpolation element is to analyze (spot diameter 30 μ m) at the mean value that carries out 5 mensuration apart from 50 μ m positions of joint interface 30 through EPMA.And the chart of Fig. 2 is that the middle body at circuit layer 12 (metallic plate 22) and metal level 13 (metallic plate 23) carries out linear analysis to laminating direction, and the chart that the concentration of said 50 μ m positions is obtained as benchmark.
At this; In this execution mode; Ge is used as adding element, and near the Ge concentration the joint interface 30 of circuit layer 12 and metal level 13 are set in the scope below the above 1 quality % of 0.05 quality %, Si concentration is set in the scope below the above 0.5 quality % of 0.05 quality %.
And, as shown in Figure 3 when in transmission electron microscope, observing the joint interface 30 of ceramic substrate 11 and circuit layer 12 (metallic plate 22) and metal level 13 (metallic plate 23), be formed with the Si high concentration portion 32 that concentrates Si at joint interface 30.In this Si high concentration portion 32, the Si concentration in Si concentration ratio circuit layer 12 (metallic plate 22) and the metal level 13 (metallic plate 23) exceeds more than 5 times.In addition, the thickness H of this Si high concentration portion 32 is below the 4nm.
At this, as shown in Figure 3, observed joint interface 30 is made as datum level S with the central authorities between the interface side end of the lattice image of the interface side end of the lattice image of circuit layer 12 (metallic plate 22) and metal level 13 (metallic plate 23) and ceramic substrate 11.
Below, with reference to Fig. 4 to Fig. 6 the manufacturing approach of the power module substrate 10 of said structure is described.
(set operation S1)
At first, like Fig. 5 and shown in Figure 6, each composition surface set Si through sputtering at metallic plate 22,23 and be selected from the interpolation element more than a kind or 2 kinds among Zn, Ge, Ag, Mg, Ca, Ga and the Li forms fixation layer 24,25.
At this, in this execution mode, Ge to be used as adding element, the Si amount in the fixation layer 24,25 is set in 0.002mg/cm
2Above 1.2mg/cm
2Below, the Ge amount is set in 0.002mg/cm
2Above 2.5mg/cm
2Below.
(lamination S2)
Then, as shown in Figure 5, metallic plate 22 is laminated to the one side side of ceramic substrate 11, and metallic plate 23 is laminated to the another side side of ceramic substrate 11.At this moment, like Fig. 5 and shown in Figure 6, to be formed with the mode lamination of the face of fixation layer 24,25 in the metallic plate 22,23 towards ceramic substrate 11.That is, between metallic plate 22,23 and ceramic substrate 11, get involved respectively fixation layer 24,25 (Si and said interpolation element) is arranged.So form layered product 20.
(heating process S3)
The layered product 20 that then, will in lamination S2, form is so that (pressure is 1～35kgf/cm to its laminating direction pressurization
2) state pack into and heat in the vacuum furnace, as shown in Figure 6, form motlten metal zone 26,27 respectively at the interface of metallic plate 22,23 and ceramic substrate 11.As shown in Figure 6; This motlten metal zone the 26, the 27th, through what form as follows: the Si of fixation layer 24,25 and said interpolation element spread to metallic plate 22,23 sides; Thereby near the Si concentration the fixation layer of metallic plate 22,23 24,25 and the concentration (being Ge concentration in this execution mode) of said interpolation element rise, and fusing point reduces.In addition, above-mentioned pressure is less than 1kgf/cm
2The time, might carry out engaging of ceramic substrate 11 and metallic plate 22,23 well.And above-mentioned pressure surpasses 35kgf/cm
2The time, metallic plate 22,23 might be out of shape.Thereby above-mentioned moulding pressure preferably is located at 1～35kgf/cm
2Scope in.
At this, in this execution mode, the pressure in the vacuum furnace is set in 10
-3～10
-6In the scope of Pa, heating-up temperature is set in more than 550 ℃ in the scope below 650 ℃.
(solidifying operation S4)
Then, under the state that is formed with motlten metal zone 26,27, temperature is remained constant.Like this, Si and the interpolation element (being Ge in this execution mode) in the motlten metal zone 26,27 further spreads to metallic plate 22,23 sides.Thus, once be that Si concentration and the concentration (in this execution mode, being Ge concentration) of said interpolation element of the part in motlten metal zone 26,27 reduces gradually, fusing point rises, and solidifies in that temperature is remained under the constant state.That is, ceramic substrate 11 engages through so-called diffusion bond (Transient Liquid Phase Diffusion Bonding) with metallic plate 22,23.So, be cooled to normal temperature after solidifying.
So, the metallic plate 22,23 that becomes circuit layer 12 and metal level 13 engages with ceramic substrate 11, produces the power module substrate 10 of this execution mode.
In the power module substrate 10 and power model 1 that become like this execution mode of above structure; Have at the composition surface set Si of metallic plate 22,23 and the set operation S1 of said interpolation element (in this execution mode, being Ge), so Si and said interpolation element are arranged owing to possess in 30 interventions of the composition surface of metallic plate 22,23 and ceramic substrate 11.At this,, therefore under condition, also can form the motlten metal zone at the interface of metallic plate and ceramic substrate than lower temperature because the element of Si and Zn, Ge, Ag, Mg, Ca, Ga and Li and so on is the element of the fusing point of reduction aluminium.
In addition; The Si of ceramic substrate 11 and circuit layer 12 (metallic plate 22) and metal level 13 (metallic plate 23) fixation layer that contains Si and said interpolation element 24,25 through making the composition surface that is formed at metallic plate 22,23 and said interpolation element spread to metallic plate 22,23 sides and form motlten metal zone 26,27; And through making Si and said interpolation element in this motlten metal zone 26,27 solidify and engage to metallic plate 22,23 diffusions; Therefore under than the engaging condition of lower temperature, short time, engage, also can secure engagement ceramic substrate 11 and metallic plate 22,23.
And; In the Width central portion of ceramic substrate 11 and the joint interface 30 of circuit layer 12 (metallic plate 22) and metal level 13 (metallic plate 23); At circuit layer 12 (metallic plate 22) and metal level 13 (metallic plate 23) solid solution Si and said interpolation element are arranged; The Si of each joint interface 30 side of circuit layer 12 and metal level 13 and the concentration of said interpolation element amount in the scope that is set in below the above 5 quality % of 0.05 quality %; In this execution mode; Ge is used as adding element, and near the Ge concentration the joint interface 30 of circuit layer 12 and metal level 13 is set in the scope below the above 1 quality % of 0.05 quality %, and Si concentration is set in the scope below the above 0.5 quality % of 0.05 quality %; So the part solution strengthening of joint interface 30 sides of circuit layer 12 (metallic plate 22) and metal level 13 (metallic plate 23) can prevent the generation of the be full of cracks in circuit layer 12 (metallic plate 22) and the metal level 13 (metallic plate 23).
And Si and said interpolation element fully spread to metallic plate 22,23 sides in heating process S3, and secure engagement metallic plate 22,23 and ceramic substrate 11.
In addition; In this execution mode; Ceramic substrate 11 is made up of AlN; Joint interface 30 at metallic plate 22,23 and ceramic substrate 11 is formed with the Si high concentration portion 32 more than 5 times that Si concentration becomes the Si concentration in circuit layer 12 (metallic plate 22) and the metal level 13 (metallic plate 23), therefore can seek the raising of the bond strength of ceramic substrate 11 and metallic plate 22,23 through the Si that is present in joint interface 30.
And; Possesses the set operation S1 that has at the composition surface of metallic plate set Si and said interpolation element and form fixation layer 24,25; And constitute as follows: in heating process S3; Si and said interpolation element through making fixation layer 24,25 spread to metallic plate 22,23 sides, thereby in the interface formation motlten metal zone 26,27 of ceramic substrate 11 with metallic plate 22,23, therefore; Need not to use the solder paper tinsel of the Al-Si system that makes difficulty, just can make metallic plate 22,23 and ceramic substrate 11 certain power module substrates 10 that engage with low cost.
In addition, in this execution mode, in set operation S1, get involved in the Si amount and the Ge amount at ceramic substrate 11 and the interface of metallic plate 22,23 and be set at Si:0.002mg/cm
2More than, Ge:0.002mg/cm
2More than, therefore can positively form motlten metal zone 26,27 at the interface of ceramic substrate 11 and metallic plate 22,23, and can secure engagement ceramic substrate 11 and metallic plate 22,23.
In addition, owing to will get involved in the Si amount and the Ge amount at ceramic substrate 11 and the interface of metallic plate 22,23 and be set at Si:1.2mg/cm
2Below, Ge:2.5mg/cm
2Below, therefore can prevent crackle to take place, and can form motlten metal zone 26,27 really at the interface of ceramic substrate 11 and metallic plate 22,23 at fixation layer 24,25.In addition, can prevent that Si and said interpolation element are too to metallic plate 22,23 sides diffusions and the intensity of the metallic plate 22,23 of near interface becomes too high.Thus, when power module substrate 10 load cold cycling, can absorb thermal stress, and can prevent breaking of ceramic substrate 11 etc. by circuit layer 12, metal level 13 (metallic plate 22,23).
And, owing to do not use the solder paper tinsel, directly form fixation layer 24,25 on the composition surface of metallic plate 22,23, therefore need not to carry out the positioning work of solder paper tinsel etc., just can engage ceramic substrate 11 and metallic plate 22,23 really.Thereby, can effectively produce this power module substrate 10.
And, owing to be formed with fixation layer 24,25, get involved thus in the oxide film at the interface of metallic plate 22,23 and ceramic substrate 11 and only be present in the surface of metallic plate 22,23, so can improve the rate of finished products of initial engagement on the composition surface of metallic plate 22,23.
Then, with reference to Fig. 7 to Figure 10 the 2nd execution mode of the present invention is described.
In the power module substrate of the 2nd execution mode, ceramic substrate 111 is by Si
3N
4Constitute.
In the Width central portion of ceramic substrate 111 and the joint interface 130 of circuit layer 112 (metallic plate 122) and metal level 113 (metallic plate 123); As shown in Figure 7; In circuit layer 112 (metallic plate 122) and metal level 113 (metallic plate 123); Except Si, also solid solution has interpolation element above in a kind or 2 that is selected among Zn, Ge, Ag, Mg, Ca, Ga and the Li.At this, near the Si the joint interface 130 of circuit layer 112 and metal level 113 and the concentration of said interpolation element amount in the scope that is set in below the above 5 quality % of 0.05 quality %.
In addition, the concentration of near Si the joint interface 130 of circuit layer 112 and metal level 113 and said interpolation element is to analyze (spot diameter 30 μ m) at the mean value that carries out 5 mensuration apart from 50 μ m positions of joint interface 130 through EPMA.And the chart of Fig. 7 is that the middle body at circuit layer 112 (metallic plate 122) and metal level 113 (metallic plate 123) carries out linear analysis to laminating direction, and the chart that the concentration of said 50 μ m positions is obtained as benchmark.
At this; In this execution mode; Ag is used as adding element, and near the Ag concentration the joint interface 130 of circuit layer 112 and metal level 113 is set in more than the 0.05 quality % in the scope below the 1.5 quality %, and Si concentration is set in the following scope of the above 0.5 quality % of 0.05 quality %.
And, as shown in Figure 8 when in transmission electron microscope, observing the joint interface 130 of ceramic substrate 111 and circuit layer 112 (metallic plate 122) and metal level 113 (metallic plate 123), be formed with the oxygen high concentration portion 132 of concentrate oxygen at joint interface 130.In this oxygen high concentration portion 132, oxygen concentration is higher than the oxygen concentration in circuit layer 112 (metallic plate 122) and the metal level 113 (metallic plate 123).In addition, the thickness H of this oxygen high concentration portion 132 is below the 4nm.
In addition; As shown in Figure 8, at the joint interface 130 of this observation the central authorities between the joint interface side end of the lattice image of the interface side end of the lattice image of circuit layer 112 (metallic plate 122) and metal level 113 (metallic plate 123) and ceramic substrate 111 are made as datum level S.
Below, with reference to Fig. 9 and Figure 10 the manufacturing approach of the power module substrate of said structure is described.In addition, in this execution mode, the set operation is divided into Si set operation S10 and adds element set operation S11.
(Si set operation S10)
At first, shown in figure 10, through sputtering at each composition surface set Si of metallic plate 122,123, form Si layer 124A, 125A.At this, the Si of Si layer 124A, 125A amount is set in 0.002mg/cm
2Above 1.2mg/cm
2Below.And the thickness of Si layer 124A, 125A preferably sets more than 0.01 μ m in the scope below the 5 μ m.
(adding element set operation S11)
Then, through sputter at said Si layer 124A, the last set of 125A is selected from the interpolation element more than a kind or 2 kinds among Zn, Ge, Ag, Mg, Ca, Ga and the Li, form to add element layer 124B, 125B.At this, in this execution mode, use Ag as adding element, the Ag amount of adding among element layer 124B, the 125B is set in 0.08mg/cm
2Above 5.4mg/cm
2Below.And the thickness that adds element layer 124B, 125B preferably sets more than 0.01 μ m in the scope below the 5 μ m.
(lamination S12)
Then, metallic plate 122 is laminated to the one side side of ceramic substrate 111, and metallic plate 123 is laminated to the another side side of ceramic substrate 111.At this moment, shown in figure 10, to be formed with Si layer 124A, 125A in the metallic plate 122,123 and to add the mode lamination of the face of element layer 124B, 125B towards ceramic substrate 111.That is, between metallic plate 122,123 and ceramic substrate 111, get involved respectively and Si layer 124A, 125A are arranged and add element layer 124B, 125B.So form layered product.
(heating process S13)
The layered product that then, will in lamination S12, form is so that (pressure is 1～35kgf/cm to its laminating direction pressurization
2) state pack into and heat in the vacuum furnace, shown in figure 10, form motlten metal zone 126,127 respectively at the interface of metallic plate 122,123 and ceramic substrate 111.Shown in figure 10; This motlten metal zone the 126, the 127th, through what form as follows: Si and the interpolation element (in this execution mode, being Ag) of Si layer 124A, 125A and interpolation element layer 124B, 125B spread to metallic plate 122,123 sides; Thereby near the Si concentration the Si layer 124A of metallic plate 122,123,125A and interpolation element layer 124B, the 125B and the concentration of interpolation element rise, and fusing point reduces.
At this, in this execution mode, the pressure in the vacuum furnace is set in 10
-3～10
-6In the scope of Pa, heating-up temperature is set in more than 550 ℃ in the scope below 650 ℃.
(solidifying operation S15)
Then, under the state that is formed with motlten metal zone 126,127, temperature is remained constant.Like this, Si in the motlten metal zone 126,127 and interpolation element further spread to metallic plate 122,123 sides.Thus, once reduced gradually for the Si concentration of the part in motlten metal zone 126,127 and the concentration of adding element, fusing point rises, and remains under the constant state in temperature and solidifies.That is, ceramic substrate 111 engages through so-called diffusion bond (Transient Liquid Phase Diffusion Bonding) with metallic plate 122,123.So, be cooled to normal temperature after solidifying.
So, the metallic plate 122,123 that becomes circuit layer 112 and metal level 113 engages with ceramic substrate 111, produces the power module substrate of this execution mode.
In the power module substrate that becomes like this execution mode of above structure; Owing to possess the Si set operation S10 that has at the composition surface set Si of metallic plate 122,123, the interpolation element set operation S11 that reaches the said interpolation element of set (in this execution mode, being Ag), Si and said interpolation element arranged so in the joint interface 130 of metallic plate 122,123 and ceramic substrate 111, get involved.At this, the element of Si and Zn, Ge, Ag, Mg, Ca, Ga and Li and so on reduces the fusing point of aluminium, so can under cryogenic conditions, engage.
In addition; The Si of Si layer 124A, 125A and interpolation element layer 124B through making the composition surface that is formed at metallic plate 122,123 of ceramic substrate 111 and circuit layer 112 (metallic plate 122) and metal level 113 (metallic plate 123), 125B and add element and spread to metallic plate 122,123 sides and form motlten metal zone 126,127; And solidify and engage to metallic plate 122,123 diffusions through making the Si in this motlten metal zone 126,127 and adding element; So under the engaging condition than lower temperature, short time, also can secure engagement ceramic substrate 111 and metallic plate 122,123.
And, in this execution mode, because ceramic substrate 111 is by Si
3N
4Constitute; Generate the oxygen high concentration portion 132 of the oxygen concentration in the metallic plate 122,123 that has oxygen concentration to be higher than forming circuit layer 112 and metal level 113 at the joint interface 130 of metallic plate that becomes circuit layer 112 and metal level 113 122,123 and ceramic substrate 111, so can seek the raising of the bond strength of ceramic substrate 111 and metallic plate 122,123 through this oxygen.And because the thickness of this oxygen high concentration portion 132 is below the 4nm, the stress when therefore suppressing through the load thermal cycle is created in the crackle in the oxygen high concentration portion 132.
More than, execution mode of the present invention is illustrated, but the present invention is not limited thereto, can suitably change in the scope of the technological thought that does not break away from its invention.
For example, for the metallic plate of forming circuit layer and the metal level situation as the fine aluminium calendering plate of purity 99.99% is illustrated, but being not limited thereto, also can be that purity is 99% aluminium (2N aluminium).
And; In the set operation; Structure at the composition surface of metallic plate set Si and said interpolation element is illustrated; But be not limited thereto, can also can distinguish set Si and said interpolation element at the composition surface of ceramic substrate set Si and said interpolation element on the composition surface of ceramic substrate and the composition surface of metallic plate.
And, in the set operation, can with Si and said interpolation element set Al together.
In addition; In the set operation, the situation through sputter set Si and said interpolation element is illustrated, but is not limited thereto; Also can be through plating, vapor deposition, CVD, cold spraying, or be dispersed with paste and the ink etc. of powder through coating, set Si and said interpolation element.
And, in the 2nd execution mode, the situation of after Si set operation S10, adding element set operation S11 in the set operation work is illustrated, but is not limited thereto, can after adding element set operation, carry out Si set operation.
In addition, can use the alloy that adds element and Si etc. to form Si and the alloy-layer that adds element.
And, be illustrated with the situation about engaging of metallic plate using vacuum furnace to carry out ceramic substrate, but be not limited thereto, also can be at N
2Carry out engaging of ceramic substrate and metallic plate under the conditions such as atmosphere, Ar atmosphere and He atmosphere.
And, be illustrated for the situation that between the top plate portion of radiator and metal level, is provided with by aluminum or aluminum alloy or contain the resilient coating that the composite material (for example AlSiC etc.) of aluminium constitutes, but also this resilient coating not.
In addition, the situation that is made up of radiator aluminium is illustrated, but also can constitutes by aluminium alloy or the composite material that contains aluminium etc.In addition, stream with coolant situation as radiator is illustrated, but the structure of radiator does not have special qualification, can use the radiator of various structures.
And, to by AlN, Si
3N
4The situation that constitutes ceramic substrate is illustrated, but is not limited thereto, also can be by Al
2O
3Wait other potteries to constitute.
[embodiment]
Comparative experiments to carrying out in order to confirm validity of the present invention describes.
The ceramic substrate that constitutes at the AlN that by thickness is 0.635mm engages by thickness and is the circuit layer that constitutes of the 4N aluminium of 0.6mm and is the metal level that the 4N aluminium of 0.6mm constitutes by thickness, has produced power module substrate.
At this, at the composition surface set Si of the aluminium sheet that becomes circuit layer and metal level (4N aluminium) and add element and form fixation layer, laminated metal sheet and ceramic substrate and pressurized, heated have engaged metallic plate and ceramic substrate.
And, make the various test films of the interpolation element that has changed set, and use these test films to carry out the evaluation of joint reliability.As the evaluation of joint reliability, compared repeatedly the joint rate after 2000 cold cycling (45 ℃～125 ℃).The result is shown in table 1 to table 3.
In addition, use following formula: joint rate=(initial engagement area-peel off area)/initial engagement area calculates the joint rate.At this, the initial engagement area is meant the area that should engage before engaging.
And,, analyze near the Si of the joint interface (apart from joint interface 50 μ m) of ceramic substrate in (spot diameter 30 μ m) mensuration metallic plate and the concentration of adding element through EPMA for these test films.The total concentration merging of Si and interpolation element is shown in table 1-3.
Be 0.01mg/cm in the Si of fixation layer amount
2The set amount of (is 0.043 μ m with thickness conversion) and interpolation element (Li) is 0.05mg/cm
2(is 0.935 μ m with thickness conversion) and set amount add up to 0.06mg/cm
2Comparative example 1 in, represented that repeatedly joint rate after 2000 cold cycling (45 ℃～125 ℃) is 50.6% low-down numerical value.Judge that it is former because few between the amount of the Si at interface amount and interpolation element (Li), fail fully to form the motlten metal zone at the interface of metallic plate and ceramic substrate.
The Si amount of fixation layer is 1.2mg/cm
2The set amount of (is 5.15 μ m with thickness conversion) and interpolation element (Zn) is 1.2mg/cm
2The set amount of (is 1.68 μ m with thickness conversion), interpolation element (Ge) is 2.4mg/cm
2The set amount of (is 4.51 μ m with thickness conversion), interpolation element (Ag) is 5.3mg/cm
2(is 5.05 μ m with thickness conversion) and set amount add up to 10.1mg/cm
2Comparative example 2 in, the joint rate after 2000 cold cycling (45 ℃～125 ℃) is 63.8% repeatedly.Infer that it is former because the many and too hardening of metallic plate of the amount of Si and interpolation element (Zn, Ge, Ag) is loaded in joint interface by the thermal stress that cold cycling causes.
In contrast, in the present invention's example 1-63, the joint rate after 2000 cold cycling (45 ℃～125 ℃) is more than 93% repeatedly.
And, be 0.01mg/cm in the Si of fixation layer amount
2The set amount of (is 0.043 μ m with thickness conversion) and interpolation element (Li) is 0.09mg/cm
2(is 1.68 μ m with thickness conversion) and set amount add up to 0.1mg/cm
2The present invention example 64 or the Si amount of fixation layer be 1.1mg/cm
2The set amount of (is 4.72 μ m with thickness conversion) and interpolation element (Zn) is 1.2mg/cm
2The set amount of (is 1.68 μ m with thickness conversion), interpolation element (Ge) is 2.2mg/cm
2The set amount of (is 4.13 μ m with thickness conversion), interpolation element (Ag) is 5.1mg/cm
2(is 4.86 μ m with thickness conversion) and set amount add up to 9.6mg/cm
2The present invention example 65 in, the joint rate after 2000 cold cycling (45 ℃～125 ℃) has surpassed 70% repeatedly.
The result judges the example according to the present invention thus, through Si and various interpolation elemental diffusion, can form the motlten metal zone really at the interface of metallic plate and ceramic substrate, and can secure engagement metallic plate and ceramic substrate.
And, confirm in the present invention's example 1-65, in the metallic plate near the joint interface of ceramic substrate the total concentration of the Si of (apart from joint interface 50 μ m) and various interpolation elements more than 0.05 quality % in the scope below the 5 quality %.
Claims (8)
1. power module substrate, its surface laminated at ceramic substrate engages has the aluminum metallic plate, it is characterized in that,
In said metallic plate; Except Si; Also solid solution is selected from Zn, Ge, Ag, Mg, Ca, the interpolation element more than a kind or 2 kinds among Ga and the Li; In said metallic plate, amount to the concentration of the Si concentration of the near interface of said ceramic substrate and said interpolation element and to be set in more than the 0.05 quality % in the scope below the 5 quality %.
2. power module substrate as claimed in claim 1 is characterized in that,
Said ceramic substrate is by AlN or Al
2O
3Constitute, be formed with the Si high concentration portion more than 5 times that Si concentration is Si concentration in the said metallic plate at the joint interface of said metallic plate and said ceramic substrate.
3. power module substrate as claimed in claim 1 is characterized in that,
Said ceramic substrate is by AlN or Si
3N
4Constitute, at the joint interface of said metallic plate and said ceramic substrate, be formed with oxygen concentration and be higher than the oxygen high concentration portion that reaches the oxygen concentration in the said ceramic substrate in the said metallic plate, the thickness of this oxygen high concentration portion is below the 4nm.
4. a power module substrate that carries radiator is characterized in that,
Possess each the described power module substrate in the claim 1 to 3 and cool off the radiator of this power module substrate.
5. a power model is characterized in that,
Possess each the described power module substrate in the claim 1 to 3 and be equipped on the electronic component on this power module substrate.
6. the manufacturing approach of a power module substrate, said power module substrate engage in the surface laminated of ceramic substrate has the aluminum metallic plate, it is characterized in that having:
The set operation; At least one side in the composition surface of the composition surface of said ceramic substrate and said metallic plate; Except Si, also set is selected from the interpolation element more than a kind or 2 kinds among Zn, Ge, Ag, Mg, Ca, Ga and the Li, forms the fixation layer that contains Si and said interpolation element;
Lamination, through said fixation layer, said ceramic substrate of lamination and said metallic plate;
Heating process will be heated when laminating direction pressurizes by the said ceramic substrate of lamination and said metallic plate, form the motlten metal zone at the interface of said ceramic substrate and said metallic plate; And
Solidify operation, engage said ceramic substrate and said metallic plate through solidifying this motlten metal zone,
In said set operation, make Si and said interpolation element at 0.1mg/cm
2Above 10mg/cm
2Get involved in the following scope at the interface of said ceramic substrate and said metallic plate,
In said heating process, spread to said metallic plate side through the element that makes said fixation layer, thereby form said motlten metal zone at the interface of said ceramic substrate and said metallic plate.
7. the manufacturing approach of power module substrate as claimed in claim 6 is characterized in that,
In said set operation, with Si and said interpolation element set Al together.
8. like the manufacturing approach of claim 6 or 7 described power module substrates, it is characterized in that,
Said set operation is dispersed with the paste and the ink of powder through plating, vapor deposition, CVD, sputter, cold spraying or through coating, at least one side's set Si in the composition surface of the composition surface of said ceramic substrate and said metallic plate be selected from the interpolation element more than a kind or 2 kinds among Zn, Ge, Ag, Mg, Ca, Ga and the Li.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106158764A (en) * | 2016-08-30 | 2016-11-23 | 无锡新洁能股份有限公司 | Power model base plate and power model |
| CN116457321A (en) * | 2020-10-22 | 2023-07-18 | 株式会社东芝 | Bonded body, ceramic copper circuit board, and semiconductor device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11163209A (en) * | 1997-12-01 | 1999-06-18 | Denki Kagaku Kogyo Kk | Ceramic circuit board and manufacture thereof |
| US20040022029A1 (en) * | 2000-08-09 | 2004-02-05 | Yoshiyuki Nagatomo | Power module and power module with heat sink |
| JP2006240955A (en) * | 2005-03-07 | 2006-09-14 | Denki Kagaku Kogyo Kk | Ceramic substrate, ceramic circuit board, and power control component using the same |
| CN101218671A (en) * | 2005-07-07 | 2008-07-09 | 株式会社丰田自动织机 | Heat dissipation device and power module |
| CN101529588A (en) * | 2006-10-27 | 2009-09-09 | 三菱麻铁里亚尔株式会社 | Power module substrate, method for manufacturing power module substrate, and power module |
-
2011
- 2011-03-01 CN CN201110051637.XA patent/CN102655126B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11163209A (en) * | 1997-12-01 | 1999-06-18 | Denki Kagaku Kogyo Kk | Ceramic circuit board and manufacture thereof |
| US20040022029A1 (en) * | 2000-08-09 | 2004-02-05 | Yoshiyuki Nagatomo | Power module and power module with heat sink |
| JP2006240955A (en) * | 2005-03-07 | 2006-09-14 | Denki Kagaku Kogyo Kk | Ceramic substrate, ceramic circuit board, and power control component using the same |
| CN101218671A (en) * | 2005-07-07 | 2008-07-09 | 株式会社丰田自动织机 | Heat dissipation device and power module |
| CN101529588A (en) * | 2006-10-27 | 2009-09-09 | 三菱麻铁里亚尔株式会社 | Power module substrate, method for manufacturing power module substrate, and power module |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106158764A (en) * | 2016-08-30 | 2016-11-23 | 无锡新洁能股份有限公司 | Power model base plate and power model |
| CN116457321A (en) * | 2020-10-22 | 2023-07-18 | 株式会社东芝 | Bonded body, ceramic copper circuit board, and semiconductor device |
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