CN106158764A - Power model base plate and power model - Google Patents
Power model base plate and power model Download PDFInfo
- Publication number
- CN106158764A CN106158764A CN201610777986.2A CN201610777986A CN106158764A CN 106158764 A CN106158764 A CN 106158764A CN 201610777986 A CN201610777986 A CN 201610777986A CN 106158764 A CN106158764 A CN 106158764A
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- China
- Prior art keywords
- base plate
- power model
- copper
- bonding layer
- ceramic substrate
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
Abstract
The present invention relates to a kind of power model base plate and power model, including base plate matrix, the one side at base plate matrix is provided with the bonding layer covering copper ceramic substrate or power component and bare chip thereof for welding；It is characterized in that: described bonding layer is formed by cold spray process；The material of described bonding layer is that thermal coefficient of expansion is at the metal-base composites covered between copper ceramic substrate or power component and bare chip thereof and power model base plate or simple metal.Due to base plate and cover the thermal stress that hot expansion system difference between copper ceramic substrate or power component and bare chip thereof produces when the present invention can be effectively reduced power model work, improve the reliability of power model.
Description
Technical field
The present invention relates to a kind of power model base plate and power model, especially one are used for controlling big electric current or high electricity
The power model base plate of the semiconductor device of pressure and power model, belong to power electronic devices and building block technique field.
Background technology
The multiple structure that existing power model is mainly made up of different materials.For common copper soleplate power mould
Block, it includes base plate, covers the critical pieces such as copper ceramic substrate, semiconductor chip, electrode terminal.Covering copper ceramic substrate is sandwich
Structure, it includes ceramic substrate and is formed at the copper metal layer at its surface and the back side.Base plate is engaged with this by scolding tin and covers copper
On the copper metal on back layer of ceramic substrate, semiconductor chip is engaged with this surface copper metal covering copper ceramic substrate by scolding tin
On layer, typically connect up with aluminum steel between the electrode of semiconductor chip and electrode terminal, integral-filled Silica hydrogel (silicone
Etc. gel) encapsulant seals.Another power model does not cover copper ceramic substrate, and it is directly on metal base plate
Engage the elements such as semiconductor chip.In the structure of above two module, owing to layers of material attribute is different, its thermodynamic behavior
Also being not quite similar, when the change of module operating temperature generating period, in modular structure, layers of material is due to thermal coefficient of expansion
(CTE) difference will produce thermal stress, cause module solder layer generation heat exhaustion.For copper soleplate power model, generally, copper is covered
Solder layer between ceramic substrate and metal base plate (typical such as copper) is easier to lose efficacy, because conventional covers copper ceramic base
The intermediate layer of the sandwich structure of plate is aluminium oxide (Al2O3) ceramic substrate, aluminium nitride (AlN) ceramic substrate, silicon nitride
(Si3N4) ceramic substrate, itself and the CTE(Al of copper2O3: 7 ppm/K, AlN:5.7 ppm/K, Si3N4: 2.7 ppm/K, Cu 17
Ppm/K) there is bigger difference.Similarly for above-mentioned the second without covering copper ceramic substrate module for, semiconductor chip and base plate
Between there is also thermal mismatch problem.Therefore, in high reliability is applied, in the urgent need to there being a kind of reduction to cover copper ceramic substrate or half
Solder layer thermal stress between conductor chip and base plate, the method alleviating thermal mismatching.
Summary of the invention
It is an object of the invention to overcome the deficiencies in the prior art, it is provided that a kind of power model base plate and power mould
Block, it is possible to when being effectively reduced power model work due to base plate with cover copper ceramic substrate or power component and bare chip thereof it
Between hot expansion system difference produce thermal stress, improve power model reliability.
The technical scheme provided according to the present invention, described power model base plate, including base plate matrix, at base plate matrix
One side is provided with the bonding layer covering copper ceramic substrate or power component and bare chip thereof for welding；It is characterized in that: described joint
Layer is formed by cold spray process；The material of described bonding layer be thermal coefficient of expansion cover copper ceramic substrate or power component and
Metal-base composites between bare chip and power model base plate or simple metal.
Further, the thickness of described base plate matrix is more than 1 millimeter.
Further, the material of described base plate matrix is any one in copper, copper alloy, aluminum, aluminium alloy, aluminium silicon carbide
Kind.
The manufacture method of described power model base plate, is characterized in that, comprise the following steps:
(1) on base plate matrix, configure mask, mask is formed and covers the bottom side layers of copper size of copper ceramic substrate, position consistency
Mask open frame；
(2) feed particles of bonding layer is sent into spray gun by compressed gas, and feed particles is injected in mask open frame region by spray gun
To the bonding layer forming predetermined thickness.
Further, described compressed gas uses nitrogen, helium or its mixed gas, the pressure of compressed gas be 1～
5MPa；The feed particles particle diameter of described bonding layer is 5～100 μm.
Further, compressed gas heats before sending into spray gun, and heating-up temperature is 50～300 DEG C.
Further, the material of described bonding layer is aluminium silicon carbide or copper alloy, the weight/mass percentage composition of copper in copper alloy
It is 10%～40%；The thickness of described bonding layer is 0.2～1.5 millimeter.
Further, described copper alloy is molybdenum copper or tungsten copper.
Further, the material of described bonding layer is nickel, tungsten or molybdenum, and the thickness of bonding layer is 0.1～1.2 millimeter.
Described power model, is characterized in that: include power model base plate, carries and cover copper above power model base plate
Ceramic substrate or power component and bare chip thereof.
The invention have the advantages that the present invention utilizes cold spray process to arrange one layer of bonding layer on base plate, it is possible to effectively
Due to base plate and cover thermal coefficient of expansion between copper ceramic substrate or power component and bare chip thereof when ground reduces module work
(CTE) thermal stress that difference produces, improves the reliability of module.
Accompanying drawing explanation
Fig. 1 is the profile of power model of the present invention.
Fig. 2 is the schematic diagram of cold spray apparatus.
Fig. 3 is the schematic diagram of the mask for forming bonding layer.
Fig. 4 is a kind of schematic diagram of the power model base plate of the present invention.
Fig. 5 is the flow chart of embodiment 2.
Fig. 6 is the present invention profile without ceramic substrate power model.
Label in figure: power model base plate 1, base plate matrix 11, bonding layer the 12, first welding material 2, cover copper ceramic base
Plate 3, surface layers of copper 31, intermediate ceramic layer 32, bottom side layers of copper the 33, second welding material 4, semiconductor element, power component and
Its bare chip 50, mask 100, mask open frame 101, cold spray apparatus 20, powder feeder 201, gas heater 202, spray gun
203。
Detailed description of the invention
Below in conjunction with concrete accompanying drawing, the invention will be further described.
Hereinafter, referring to the drawings embodiments of the present invention are described in detail.It addition, the invention is not restricted to following reality
Executing mode, each figure of institute's reference is able to understand present disclosure and the most right in the following description
Shape, size and position relationship are indicated.That is, the invention is not restricted to shape, size and position that each figure is illustrated shown
Put relation.
Embodiment 1:
As it is shown in figure 1, power model of the present invention includes that power model base plate 1, power model base plate 1 include base plate base
Body 11 and the bonding layer 12 being arranged on base plate matrix 11, weld material with on the bonding layer 12 of base plate 1 through first at power model
Material 2 joint covers copper ceramic substrate 3, engages semiconductor element 5 through the second welding material 4 covering on copper ceramic substrate 3.Described cover copper
Ceramic substrate includes surface layers of copper 31, intermediate ceramic layer 32 and the bottom side layers of copper 33 from top to bottom set gradually, bottom side layers of copper 33
Being engaged with the bonding layer 12 of power model base plate 1 by the first welding material 2, surface layers of copper 31 is by the second welding material 4 and half
Conductor element 5 engages.
The base plate matrix 11 of described power model base plate 1 plays the effect of heat radiation and mechanical support, it is therefore desirable to have
Good heat conductivity and mechanical strength, preferred material be copper, copper alloy, aluminum, aluminium alloy, aluminium silicon carbide any one.Institute
State base plate matrix 11 thickness more than 1 millimeter.
Bonding layer 12 on described power model base plate 1 is formed by cold spray process, by aluminium silicon carbide, molybdenum
Copper, tungsten copper, copper alloy, nickel, tungsten, molybdenum etc. have good heat conductivity and suitably thermal coefficient of expansion metal-base composites or
Simple metal is formed.
Described cold spray process is spraying technology based on aerodynamic Yu high velocity impact principle of dynamics, and it utilizes height
Calm the anger body (such as H2、He、N2) importing Laval nozzle, gases at high pressure will produce Supersonic Flow after flowing through Laval nozzle throat,
Obtaining high velocity air (300～1200 m/s), powder particle (5～100 micron diameter) is sent in air-flow vertically, is added through air-flow
With high-speed impact matrix after speed, it is deposited on matrix surface by producing bigger plastic deformation and forms coating.In this process
In, gases at high pressure can preheat, and to improve air velocity, thus increases particle rapidity；On the other hand touching of powder particle is increased
Hit temperature, thus improve the deformability of particle.Owing to powder particle temperature in whole deposition process of cold spray process is low
In its fusing point, belong to low temperature depositing, little to the heat affecting of matrix, be evenly distributed, the basic non-oxidation of coating, coating deep layer voidage
Low, adhesion good, internal stress free.
Cold spray layer needs to select suitable material, because being engaged in power model base plate 1 through the first welding material 2
One side cover copper ceramic substrate 3 by the three-decker including that surface layers of copper 31, intermediate ceramic layer 32 and bottom side layers of copper 33 form,
It has insulating properties, as Ins. ulative material；Such as, intermediate ceramic layer 32 can use high-purity alpha-alumina, aluminium nitride, nitridation
Silicon pottery etc., due to high-purity alpha-alumina, aluminium nitride or silicon nitride cover the Thermal Synthetic coefficient of expansion of copper ceramic substrate 2.8～
Between 7ppm/k, the power model thermal coefficient of expansion of the base plate matrix 11 of base plate 1, if copper is 17ppm/K, aluminum is 23ppm/
K, aluminium silicon carbide is 6.5～9.23ppm/k, and therefore the thermal coefficient of expansion of bonding layer 12 material that cold spray process is formed should select
Cover between copper ceramic substrate 3 and power model base plate 1.During it addition, semiconductor element 5 works, its heat distributed must lead to
Crossing component base, conduction is to covering copper ceramic substrate 3, then is transmitted to power model base plate 1, finally by radiator by heat band
Walk.This just requires that the bonding layer 12 that cold spray process is formed has good heat conductivility again.Conditions above can be met simultaneously
There are two class materials.The first kind is metal-base composites, such as copper alloys such as aluminium silicon carbide, molybdenum copper, tungsten coppers.In this kind of material,
The weight/mass percentage composition of copper needs to control 10%～40%, so, while taking into account heat conduction, and containing of the element such as tungsten and molybdenum
Amount can effectively control the thermal coefficient of expansion of bonding layer, thus reaches the purpose extending solder layer fatigue life.According to covering copper pottery
The size of porcelain substrate 3 and thickness, the thickness of bonding layer 12 can control at 0.2～1.5 millimeter.Equations of The Second Kind is simple metal, as nickel,
Tungsten, molybdenum, the thickness of this kind of cold spray bonding layer can control at 0.1～1.2 millimeter.
As in figure 2 it is shown, prepare, by the present invention, the cold spray apparatus 20 that the bonding layer on power model base plate is used, main
Will be by groups such as powder feeder 201, gas heater 202 and the spray guns 203 that the material powder of offer is ejected into base plate matrix 11
Become.
When forming bonding layer 12 by cold spray apparatus 20, base plate matrix 11 is configured with mask 100.Mask 100
Be formed and cover copper ceramic substrate 3 bottom side layers of copper 33 mask open frame 101 of the same size, the position of mask open frame 101 with
Cover the position consistency that copper ceramic substrate 3 coordinates on base plate 1.On the one hand, it is provided to the compressed gas of powder feeder 201, will send
Mean diameter in powder device 201 be 5～100 μm powder particle with regulation spray volume supply to spray gun 203, on the other hand,
After compressed gas is heated by gas heater 202, it is provided to spray gun 203.The optional nitrogen of compressed gas, helium or its mix
Close gas etc..Compressed gas heating-up temperature is at 50～300 DEG C.
By spray gun 203, making heated compressed gas become supersonic airstream, now the air pressure of compressed gas is preferably
1～5MPa.This is because, by the pressure of compressed gas is adjusted to this degree, it is possible to increase the bonding layer sprayed with
The adhesive strength of base plate matrix.The powder particle being provided to spray gun is accelerated to surpass by the supersonic airstream of this compressed gas
Transonic condition, and mask open frame 101 region on high-speed impact base plate matrix 11 piling up, pulverized powder under solid state shape
The spray gun 33 of granule is repeated along opening frame region and moves horizontally, and thus forms connecing of predetermined thickness on base plate matrix 11
Close layer 12.
Embodiment 2: the manufacture method of power model, as it is shown in figure 5, comprise the following steps:
First, the base plate matrix 11 processed through mechanical stamping and pre-bending is covered copper ceramic substrate by cold spray-coating method fixing
That face (for upper surface in figure) of 3 forms one layer of bonding layer 12, and cold spraying bonding layer 12 is according to covering copper ceramic substrate 3 at power mould
On block base plate, position and the number of 1 are correspondingly arranged position and number.With specific reference to the cold spray process of embodiment 1, the most not
Repeat again.
Then, nickel electrodeposited coating is formed on power model base plate 1 surface.In this nickel is electroplated, it is possible to use electrolysis plating
Or any one method in electroless plating.
Then, the bonding layer 12 of power model base plate 1 after plating arranges the first welding material 2, and first
Place on welding material 2 and cover copper ceramic substrate 3, then the second welding material 4 is set and in the second weldering covering on copper ceramic substrate 3
Connect and on material 4, place semiconductor element 5 again, in soldering furnace, finally carry out solder joints.Also can weld in two steps, it may be assumed that first
Step, is covering the second welding material 4 and semiconductor element 5 placing high temperature on copper ceramic substrate 3 and is carrying out in soldering furnace in advance
Solder joints；Second step, will cover copper ceramic substrate 3(on it by the first welding material 2 of relatively low melting point and weld quasiconductor
Element 5) and power model base plate 1 weld.Welding material is mainly the solder of tinbase, lead base etc., and solder is arranged on and connects
Close layer 12 and the method covered on copper ceramic substrate 3 surface, use the various methods of existing routine.Help for example, it is possible to will comprise
The cream solder of solder flux is coated in bonding layer 12 by silk screen print method and covers on copper ceramic substrate 3.Alternatively, it is also possible to by lamellar
Solid solder be placed in bonding layer 12 and cover on copper ceramic substrate 3.Semiconductor element 5 is by IGBT(igbt),
MOSFET(MOS memory), the semiconductor element such as diode realizes.Semiconductor element 5 can be according to use
Purpose different cover arrange on copper ceramic substrate 3 one or more.
Embodiment 3:
As shown in Figure 6, for without covering copper ceramic substrate power model, this power model mainly includes power model base plate 1, power
Module base plate 1 includes base plate matrix 11 and the bonding layer 12 being arranged on base plate matrix 11；Through the first weldering on bonding layer 12
Connect material 2 and engage power component and bare chip 50 thereof.The manufacture method of this power model base plate 1 sees embodiment 1, at this
Repeat no more.
Embodiment 4:
Described in embodiment 3, the manufacture process of power model is as follows:
First, cold spraying bonding layer 12 on base plate matrix 11, then does nickel plating on base plate 1, can need basis here
Need to do the parcel plating of base plate 1 or overall plating, such as, for insulating metal substrate, parcel plating can be done, i.e. only exist
Nickel plating is done on bonding layer.
After nickel has been electroplated, bonding layer is placed the first welding material 2 and power component and bare chip 50 thereof, finally
Solder joints is carried out in soldering furnace.
The present invention has illustrated and has described only certain embodiments of the present invention, but claimed interest field is also
It is not limited to this, make use of the basic conception of the present invention, various deformation that person of ordinary skill in the field is carried out and improvement,
Still fall within the interest field of present invention request.
Claims (10)
1. a power model base plate, including base plate matrix (11), the one side at base plate matrix (11) is provided with to be covered for welding
The bonding layer (12) of copper ceramic substrate (3) or power component and bare chip (50) thereof；It is characterized in that: described bonding layer (12) leads to
Cross cold spray process to be formed；The material of described bonding layer (12) is that thermal coefficient of expansion is covering copper ceramic substrate (3) or power component
And bare chip (50) and the power model metal-base composites between base plate (1) or simple metal.
2. power model base plate as claimed in claim 1, is characterized in that: the thickness of described base plate matrix (11) is at 1 millimeter
Above.
3. power model base plate as claimed in claim 1, is characterized in that: the material of described base plate matrix (11) is copper, copper
Any one in alloy, aluminum, aluminium alloy, aluminium silicon carbide.
4. a manufacture method for power model base plate, is characterized in that, comprises the following steps:
(1) on base plate matrix (11), mask (100) is configured, the upper bottom side copper formed and cover copper ceramic substrate (3) of mask (100)
Layer (33) size, the mask open frame (101) of position consistency；
(2) feed particles of bonding layer is sent into spray gun by compressed gas, and feed particles is injected in mask open frame (101) by spray gun
Region is to the bonding layer (12) forming predetermined thickness.
5. the manufacture method of power model base plate as claimed in claim 4, is characterized in that: described compressed gas uses nitrogen
Gas, helium or its mixed gas, the pressure of compressed gas is 1～5MPa；The feed particles particle diameter of described bonding layer is 5～100 μ
m。
6. the manufacture method of power model base plate as claimed in claim 4, is characterized in that: compressed gas is before sending into spray gun
Heating, heating-up temperature is 50～300 DEG C.
7. the manufacture method of power model base plate as claimed in claim 4, is characterized in that: the material of described bonding layer (12)
For aluminium silicon carbide or copper alloy, in copper alloy, the weight/mass percentage composition of copper is 10%～40%；The thickness of described bonding layer (12) is
0.2～1.5 millimeter.
8. the manufacture method of power model base plate as claimed in claim 7, is characterized in that: described copper alloy is molybdenum copper or tungsten
Copper.
9. the manufacture method of power model base plate as claimed in claim 4, is characterized in that: the material of described bonding layer (12)
For nickel, tungsten or molybdenum, the thickness of bonding layer (12) is 0.1～1.2 millimeter.
10. a power model, is characterized in that: include the power model base plate (1) as described in any one of claims 1 to 3,
Carry in power model base plate (1) top and cover copper ceramic substrate (3) or power component and bare chip (50) thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610777986.2A CN106158764A (en) | 2016-08-30 | 2016-08-30 | Power model base plate and power model |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610777986.2A CN106158764A (en) | 2016-08-30 | 2016-08-30 | Power model base plate and power model |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106158764A true CN106158764A (en) | 2016-11-23 |
Family
ID=57344999
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610777986.2A Pending CN106158764A (en) | 2016-08-30 | 2016-08-30 | Power model base plate and power model |
Country Status (1)
| Country | Link |
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| CN (1) | CN106158764A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106946583A (en) * | 2017-04-07 | 2017-07-14 | 西安明科微电子材料有限公司 | A kind of preparation method of aluminium silicon carbide unitary substrate |
| DE102018133344A1 (en) * | 2018-12-21 | 2020-06-25 | Infineon Technologies Ag | SEMICONDUCTOR PANELS, SEMICONDUCTOR HOUSING, AND METHOD FOR THEIR PRODUCTION |
| CN112687633A (en) * | 2020-12-16 | 2021-04-20 | 株洲中车时代半导体有限公司 | IGBT power module heat dissipation structure and method for improving large-area welding reliability |
| CN113895915A (en) * | 2021-09-30 | 2022-01-07 | 江西德尔诚半导体有限公司 | Diode automatic feeding device |
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| CN112687633A (en) * | 2020-12-16 | 2021-04-20 | 株洲中车时代半导体有限公司 | IGBT power module heat dissipation structure and method for improving large-area welding reliability |
| CN113895915A (en) * | 2021-09-30 | 2022-01-07 | 江西德尔诚半导体有限公司 | Diode automatic feeding device |
| CN113895915B (en) * | 2021-09-30 | 2023-02-03 | 江西德尔诚半导体有限公司 | Diode automatic feeding device |
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