TW201324701A - Connecting body - Google Patents
Connecting body Download PDFInfo
- Publication number
- TW201324701A TW201324701A TW101135780A TW101135780A TW201324701A TW 201324701 A TW201324701 A TW 201324701A TW 101135780 A TW101135780 A TW 101135780A TW 101135780 A TW101135780 A TW 101135780A TW 201324701 A TW201324701 A TW 201324701A
- Authority
- TW
- Taiwan
- Prior art keywords
- aluminum
- metal
- ceramic substrate
- circuit layer
- bonded
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 90
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 80
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 79
- 239000000919 ceramic Substances 0.000 claims abstract description 69
- 238000005219 brazing Methods 0.000 claims abstract description 52
- 239000004065 semiconductor Substances 0.000 claims abstract description 42
- 229910052802 copper Inorganic materials 0.000 claims abstract description 39
- 239000010949 copper Substances 0.000 claims abstract description 39
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims abstract description 33
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 11
- 239000011777 magnesium Substances 0.000 claims abstract description 11
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims description 97
- 239000002184 metal Substances 0.000 claims description 97
- 229910000679 solder Inorganic materials 0.000 claims description 39
- 239000000843 powder Substances 0.000 claims description 16
- 229910045601 alloy Inorganic materials 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052797 bismuth Inorganic materials 0.000 claims description 8
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 8
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 239000007790 solid phase Substances 0.000 claims description 3
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical group [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 abstract description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000009434 installation Methods 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000945 filler Substances 0.000 description 23
- 239000007789 gas Substances 0.000 description 21
- 239000007921 spray Substances 0.000 description 17
- 230000017525 heat dissipation Effects 0.000 description 15
- 238000000034 method Methods 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 238000009864 tensile test Methods 0.000 description 3
- 229910052684 Cerium Inorganic materials 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- -1 aluminum-copper-silver Chemical compound 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 229910052839 forsterite Inorganic materials 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910017980 Ag—Sn Inorganic materials 0.000 description 1
- 229910020220 Pb—Sn Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/28—Selection of soldering or welding materials proper with the principal constituent melting at less than 950 degrees C
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/28—Selection of soldering or welding materials proper with the principal constituent melting at less than 950 degrees C
- B23K35/286—Al as the principal constituent
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/12—Metallic interlayers
- C04B2237/121—Metallic interlayers based on aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Ceramic Products (AREA)
- Die Bonding (AREA)
Abstract
Description
本發明係關於將半導體元件安裝在形成有電路層的絕緣基板之接合體。 The present invention relates to a bonded body in which a semiconductor element is mounted on an insulating substrate on which a circuit layer is formed.
以使用於產業用、汽車用等從電力控制到馬達控制之廣泛領域的節能化之關鍵元件(key device)而言，以往有一種功率模組(Power Module)為人所知。功率模組係為在屬於基材的絕緣基板(例如陶瓷基板)之一方的面，將半導體晶片(電晶體)安裝在由經硬焊之金屬板所構成的電路圖案上，並在另一方的面透過經硬焊之金屬板而配設有散熱板的裝置(例如參照專利文獻1)。在此種功率模組中，半導體晶片係藉由軟焊接合在電路圖案上。 In the past, a power module has been known as a key device for energy saving in a wide range of fields, such as industrial use and automobiles, from power control to motor control. The power module is a semiconductor wafer (transistor) mounted on a circuit pattern composed of a brazed metal plate on one side of an insulating substrate (for example, a ceramic substrate) belonging to a substrate, and is on the other side. A device in which a surface is provided with a heat dissipation plate through a brazed metal plate (see, for example, Patent Document 1). In such a power module, the semiconductor wafer is bonded to the circuit pattern by soldering.
另一方面，以將半導體元件接合在金屬基板的方法而言，已揭示有一種使用使平均直徑100nm以下的金屬微粒子分散於有機系的溶劑之金屬奈米漿料(nano paste)的方法。 On the other hand, in the method of bonding a semiconductor element to a metal substrate, a method of dispersing metal fine particles having an average diameter of 100 nm or less in a solvent of an organic solvent has been disclosed.
專利文獻1：日本特開2007-258416號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 2007-258416
專利文獻2：日本特開2006-202938號公報 Patent Document 2: Japanese Laid-Open Patent Publication No. 2006-202938
如專利文獻1所示，在藉由軟焊接合半導體晶片時，因為軟焊的耐熱性低，因此會有在熱循環產生破裂(crack)之虞。 As shown in Patent Document 1, when the semiconductor wafer is joined by soft soldering, since the heat resistance of the solder is low, cracking occurs in the thermal cycle.
此外，在專利文獻2的接合方法中，金屬奈米漿料雖然耐熱性優異，惟在接合時會有產生孔洞(void)之虞，在產生孔洞時，會有接合部的熱阻增大且散熱性降低之問題。 Further, in the bonding method of Patent Document 2, the metal nanopaste has excellent heat resistance, but a void is generated at the time of bonding, and when the hole is formed, the thermal resistance of the joint portion increases. The problem of reduced heat dissipation.
本發明係為有鑑於前述問題而研創者，其目的在於提供一種接合強度高且散熱特性及耐熱性亦優異之接合體。 The present invention has been made in view of the above problems, and an object of the invention is to provide a bonded body having high joint strength and excellent heat dissipation properties and heat resistance.
為了解決前述課題並達成目的，本發明之接合體係具備半導體元件；及形成有安裝前述半導體元件之電路層且具有絕緣性的陶瓷基板，前述半導體元件與前述電路層係藉由鋁系硬焊料來接合。 In order to solve the above problems and achieve the object, the bonding system of the present invention includes a semiconductor element; and a ceramic substrate having an insulating layer on which a circuit layer on which the semiconductor element is mounted is formed, wherein the semiconductor element and the circuit layer are made of aluminum-based hard solder. Engage.
此外，本發明之接合體在前述發明中，前述陶瓷基板係包含氮化物系陶瓷。 Further, in the bonded body of the present invention, the ceramic substrate includes a nitride-based ceramic.
此外，本發明之接合體在前述發明中，前述半導體元件係為碳化矽元件。 Further, in the bonded body of the present invention, in the invention described above, the semiconductor element is a tantalum carbide element.
此外，本發明之接合體在前述發明中，前述鋁系硬焊料係含有從由鍺(germanium)、鎂(magnesium)、矽、銅所組成之群組選擇之至少一種。 Further, in the above-described invention, the aluminum-based hard solder contains at least one selected from the group consisting of germanium, magnesium, strontium, and copper.
此外，本發明之接合體在前述發明中，前述電路層係包含從由銅、銀、或金所組成之群組選擇之金屬、或含有該金屬之合金。 Further, in the bonded body of the present invention, the circuit layer includes a metal selected from the group consisting of copper, silver, or gold, or an alloy containing the metal.
此外，本發明之接合體在前述發明中，係在前述陶瓷基板與前述電路層之間具備金屬構件，該金屬構件係包含從由鋁、銀、鎳(nickel)、金、或銅所組成的群組選擇之金屬、或含有該金屬之 合金；且前述金屬構件與前述陶瓷基板係以鋁系硬焊料來接合，前述電路層係為藉由下述方式形成者：透過遮罩(mask)使包含金屬或合金之粉末與氣體一起朝前述金屬構件的表面加速，並以固相狀態直接噴附並堆積在前述表面而形成者。 Further, in the above-described invention, the bonded body of the present invention includes a metal member including the aluminum, silver, nickel, gold, or copper between the ceramic substrate and the circuit layer. The metal selected by the group or contains the metal And the metal member and the ceramic substrate are joined by an aluminum-based brazing material, and the circuit layer is formed by a mask that causes a powder containing a metal or an alloy to face the gas together with a gas. The surface of the metal member is accelerated, and is formed by directly spraying and depositing on the surface in a solid phase state.
此外，本發明之接合體在前述發明中，接合前述半導體元件與前述電路層之第1鋁系硬焊料的接合溫度，係為接合前述金屬構件與前述陶瓷基板之第2鋁系硬焊料的接合溫度以下者。 Further, in the above-described invention, the bonding temperature of the first aluminum-based brazing material of the semiconductor element and the circuit layer is bonded to the second aluminum-based brazing material of the ceramic substrate. Below the temperature.
此外，本發明之接合體在前述發明中，前述陶瓷基板係為DBC基板。 Further, in the bonded body of the present invention, the ceramic substrate is a DBC substrate.
此外，本發明之接合體在前述發明中，前述陶瓷基板係為藉由鋁系硬焊料來接合包含銅或銅合金而成之電路層的活性金屬接合基板。 Further, in the bonded body of the present invention, the ceramic substrate is an active metal bonded substrate in which a circuit layer containing copper or a copper alloy is bonded by an aluminum-based hard solder.
根據本發明，將形成有電路層且具有絕緣性的陶瓷基板上所形成之電路層與半導體元件藉由鋁系硬焊料來接合，藉此能得到接合強度高且散熱特性及耐熱性優異的接合體。 According to the present invention, the circuit layer formed on the ceramic substrate having the circuit layer and having the insulating property is bonded to the semiconductor element by the aluminum-based brazing material, whereby the bonding strength is high and the heat dissipation property and the heat resistance are excellent. body.
10‧‧‧陶瓷基板 10‧‧‧Ceramic substrate
20‧‧‧電路層 20‧‧‧ circuit layer
30‧‧‧半導體元件 30‧‧‧Semiconductor components
40‧‧‧散熱構件 40‧‧‧heating components
50‧‧‧金屬構件 50‧‧‧Metal components
60‧‧‧鋁系硬焊料 60‧‧‧Aluminum hard solder
70‧‧‧冷噴塗裝置 70‧‧‧ Cold spray device
71‧‧‧氣體加熱器 71‧‧‧ gas heater
72‧‧‧粉末供給裝置 72‧‧‧Powder supply device
73‧‧‧噴槍 73‧‧‧ spray gun
74‧‧‧氣體噴嘴 74‧‧‧ gas nozzle
75、76‧‧‧閥 75, 76‧‧‧ valve
80‧‧‧DBC基板 80‧‧‧DBC substrate
81‧‧‧銅板 81‧‧‧ copper plate
82‧‧‧AMC基板 82‧‧‧AMC substrate
100、200、300‧‧‧功率模組 100, 200, 300‧‧‧ power modules
第1圖係係為顯示本發明之屬於接合體的功率模組之構成的圖。 Fig. 1 is a view showing the configuration of a power module belonging to a bonded body of the present invention.
第2圖係為顯示顯示第1圖所示之功率模組的製作方法的流程圖。 Fig. 2 is a flow chart showing a method of manufacturing the power module shown in Fig. 1.
第3圖係為顯示冷噴塗裝置之概略的示意圖。 Figure 3 is a schematic view showing the outline of a cold spray apparatus.
第4圖係為顯示本發明實施形態的變形例1之功率模組之構成的剖面圖。 Fig. 4 is a cross-sectional view showing the configuration of a power module according to a first modification of the embodiment of the present invention.
第5圖係為顯示本發明實施形態的變形例2之功率模組之構成的剖面圖。 Fig. 5 is a cross-sectional view showing the configuration of a power module according to a second modification of the embodiment of the present invention.
以下，一面參照圖式，一面詳細地說明用以實施本發明之形態。再者，本發明並非為限定於以下之實施形態者。此外，在以下的說明中所參照的各圖式，僅概略性顯示能夠理解本發明內容的程度之形狀、大小、及位置關係。亦即，本發明並非為僅限定於各圖中所例示之形狀、大小、及位置關係者。 Hereinafter, the form for carrying out the invention will be described in detail with reference to the drawings. Furthermore, the invention is not limited to the embodiments described below. In addition, in the drawings which are referred to in the following description, only the shape, size, and positional relationship of the extent to which the present invention can be understood are schematically shown. That is, the present invention is not limited to the shapes, sizes, and positional relationships exemplified in the respective drawings.
第1圖係為顯示本發明實施形態之屬於接合體之功率模組的構成之剖面圖。第1圖所示之功率模組100係具備：屬於絕緣基板之陶瓷基板10；隔著金屬構件50而形成在陶瓷基板10之一方的面之電路層20；安裝於電路層20上之半導體元件30；及透過金屬構件50而設置在陶瓷基板10之與電路層20成相反側的面之散熱構件40。 Fig. 1 is a cross-sectional view showing the configuration of a power module belonging to a bonded body according to an embodiment of the present invention. The power module 100 shown in FIG. 1 includes a ceramic substrate 10 that is an insulating substrate, a circuit layer 20 that is formed on one surface of the ceramic substrate 10 via the metal member 50, and a semiconductor component that is mounted on the circuit layer 20. 30; and a heat dissipating member 40 provided on the surface of the ceramic substrate 10 opposite to the circuit layer 20 through the metal member 50.
陶瓷基板10係為由絕緣性材料所構成之大致板狀的構件。以絕緣性材料而言，係使用例如氮化鋁、氮化矽等氮化物系陶瓷、或氧化鋁(alumina)、氧化鎂(magnesia)、氧化鋯(zirconia)、滑石(steatite)、鎂橄欖石(forsterite)、莫來石(mullite)、二氧化鈦(titania)、二氧化矽(silica)、氮化矽(sialon)等氧化物系陶瓷。由耐熱性、熱傳導性之觀點來看，係以氮化物系陶瓷為較佳。 The ceramic substrate 10 is a substantially plate-shaped member made of an insulating material. As the insulating material, for example, a nitride-based ceramic such as aluminum nitride or tantalum nitride, or alumina, magnesia, zirconia, steatite or forsterite is used. Oxide ceramics such as (forsterite), mullite, titania, silica, and sialon. From the viewpoint of heat resistance and thermal conductivity, a nitride-based ceramic is preferable.
電路層20係由例如鋁或銅、銀等具有良好的電導度之金屬或包含前述金屬之合金所構成。電路層20係藉由後述之冷噴塗法所形成。在該電路層20形成有用以對半導體元件30等傳遞電訊號 之電路圖案。 The circuit layer 20 is composed of a metal having good electrical conductivity such as aluminum or copper, silver, or an alloy containing the foregoing metal. The circuit layer 20 is formed by a cold spray method described later. Formed in the circuit layer 20 to transmit electrical signals to the semiconductor component 30 or the like Circuit pattern.
半導體元件30係藉由二極體(diode)、電晶體(transistor)、IGBT(絕緣閘雙極電晶體)等半導體元件來實現。再者，半導體元件30較佳為可在高電壓下使用之功率元件(power device)，特別是耐熱性優異之碳化矽晶片，且亦可配合使用目的而在陶瓷基板10上設置複數個。 The semiconductor element 30 is realized by a semiconductor element such as a diode, a transistor, or an IGBT (Insulated Gate Bipolar Transistor). Further, the semiconductor element 30 is preferably a power device that can be used at a high voltage, in particular, a silicon carbide wafer excellent in heat resistance, and a plurality of ceramic substrates 10 can be provided for the purpose of use.
散熱構件40係與電路層20同樣地為藉由後述之冷噴塗法所形成之金屬皮膜層，且由銅、銅合金、鋁、鋁合金、銀、銀合金等具有良好的熱傳導性之金屬或合金所構成。從半導體元件30產生的熱透過散熱構件40而經由陶瓷基板10排出至外部。為了提高散熱效率，在散熱構件40與陶瓷基板10接合的面相反的面，亦可設置藉由切削加工來使散熱構件40的表面積增大之多數個溝部。 Similarly to the circuit layer 20, the heat dissipation member 40 is a metal film layer formed by a cold spray method to be described later, and is made of a metal having good thermal conductivity such as copper, a copper alloy, aluminum, an aluminum alloy, a silver or a silver alloy. Made up of alloys. The heat generated from the semiconductor element 30 is transmitted to the outside through the ceramic substrate 10 through the heat dissipation member 40. In order to improve heat dissipation efficiency, a plurality of groove portions in which the surface area of the heat dissipation member 40 is increased by cutting processing may be provided on a surface opposite to the surface on which the heat dissipation member 40 and the ceramic substrate 10 are joined.
金屬構件50係藉由鋁系硬焊料接合在陶瓷基板10的表面。金屬構件50係在將陶瓷基板10與由金屬或合金所組成之電路層20接合、或在將陶瓷基板10與由金屬或合金所組成之散熱構件40接合時，能提升接合強度。 The metal member 50 is bonded to the surface of the ceramic substrate 10 by an aluminum-based hard solder. The metal member 50 can improve the bonding strength when the ceramic substrate 10 is bonded to the circuit layer 20 composed of a metal or an alloy or when the ceramic substrate 10 is bonded to the heat dissipation member 40 composed of a metal or an alloy.
金屬構件50係厚度例如在0.01mm至0.2mm左右的箔片狀之滾軋構件。在本實施形態中，藉由使用如此小厚度的構件，而在與陶瓷基板10之接合、或其他之熱處理步驟時，防止起因於金屬構件50與陶瓷基板10之間之熱膨脹率的差所造成之破損。另外，以配置於鋁系硬焊料60上之金屬構件50而言，並不限定於箔片狀，只要厚度為約1mm以下，亦可配置板狀的金屬構件。 The metal member 50 is a foil-shaped rolling member having a thickness of, for example, about 0.01 mm to 0.2 mm. In the present embodiment, by using a member having such a small thickness, the bonding with the ceramic substrate 10 or another heat treatment step prevents the difference in thermal expansion rate between the metal member 50 and the ceramic substrate 10. Broken. In addition, the metal member 50 disposed on the aluminum-based brazing material 60 is not limited to the foil shape, and a plate-shaped metal member may be disposed as long as the thickness is about 1 mm or less.
以金屬構件50而言，係使用能藉由硬焊接合至陶瓷基板10， 且具有能藉由後述之冷噴塗法進行皮膜形成之程度的硬度之金屬或合金。該硬度的範圍會因為冷噴塗法的成膜條件等而不同，因此，雖未被設定於一定的範圍，大體上，只要是維氏(Vickers)硬度在100HV以下的金屬構件皆能適用。具體而言，可舉例鋁、銀、鎳、金、銅、或包含該等金屬之合金等。 In the case of the metal member 50, it is used to be bonded to the ceramic substrate 10 by hard soldering. Further, it has a metal or alloy having a hardness that can be formed by a cold spray method described later. Since the range of the hardness differs depending on the film formation conditions of the cold spray method, etc., it is generally applicable to a metal member having a Vickers hardness of 100 HV or less, although it is not set in a certain range. Specifically, aluminum, silver, nickel, gold, copper, an alloy containing the metals, and the like can be exemplified.
鋁系硬焊料60係能因應於陶瓷基板10的種類、或金屬構件50的種類來適當選擇。鋁系硬焊料60較佳為以鋁為主要成分，且含有鍺、鎂、矽、銅中之至少一種者。另外，在本說明書中，當將鋁作為主要成分時，係意指將鋁的混合比例設為50質量%以上。 The aluminum hard solder 60 can be appropriately selected depending on the type of the ceramic substrate 10 or the type of the metal member 50. The aluminum-based brazing filler metal 60 preferably contains aluminum as a main component and contains at least one of barium, magnesium, strontium, and copper. In addition, in the present specification, when aluminum is used as a main component, it means that the mixing ratio of aluminum is 50% by mass or more.
以在本實施形態中所使用之鋁系硬焊料60而言，例如能適當地使用日本發明專利第3977875號公報所記載之5至45質量%的鍺、5至15質量%的矽、2至10質量%的鎂、剩餘部分為鋁之硬焊料。 For the aluminum-based brazing material 60 to be used in the present embodiment, for example, 5 to 45% by mass of bismuth, 5 to 15% by mass of bismuth, 2 to 2 as described in Japanese Patent No. 3977875 can be suitably used. 10% by mass of magnesium and the remainder being aluminum hard solder.
此外，例如亦可適當地使用日本發明專利第3398204號公報所記載之含有12至22質量%的銅、7至9質量%的矽、0.2至1質量%的鎂、69至77質量%的鋁之硬焊料。 Further, for example, 12 to 22% by mass of copper, 7 to 9% by mass of bismuth, 0.2 to 1% by mass of magnesium, and 69 to 77% by mass of aluminum as described in Japanese Patent No. 3398204 can be suitably used. Hard solder.
此外，例如亦可適當地使用日本發明專利第3168227號公報所記載之含有50至80質量%的鋁、5至50質量%的鍺、4至10質量%的矽、0.5至5質量%的鎂、0.5至25質量%的銅、0.5至10質量%的鎳之硬焊料。 Further, for example, 50 to 80% by mass of aluminum, 5 to 50% by mass of bismuth, 4 to 10% by mass of bismuth, and 0.5 to 5% by mass of magnesium as described in Japanese Patent No. 3168227 can be suitably used. , 0.5 to 25% by mass of copper, and 0.5 to 10% by mass of a hard solder of nickel.
此外，例如亦可適當地使用日本發明專利第3398203號公報所記載之含有10至40質量%的銅、10至40質量%的銀、0.1至5質量%的鎂、40至49質量%的鋁之硬焊料、或含有10至40質 量%的鍺、10至40質量%的銀、2至10質量%的矽、0.1至5質量%的鎂、40至49質量%的鋁之硬焊料。 Further, for example, 10 to 40% by mass of copper, 10 to 40% by mass of silver, 0.1 to 5% by mass of magnesium, and 40 to 49% by mass of aluminum as described in Japanese Patent No. 3398203 can be suitably used. Hard solder, or contains 10 to 40 The amount of cerium, 10 to 40% by mass of silver, 2 to 10% by mass of cerium, 0.1 to 5% by mass of magnesium, and 40 to 49% by mass of aluminum hard solder.
在前述例示之鋁系硬焊料60中，鍺、矽、銅、銀係皆具有藉由添加至鋁系硬焊料60來降低硬焊料之融點的效果，因此適於作為鋁系硬焊料60的添加成分。此外，鋁-銅-銀、及鋁-鍺-銀，係各以3元系統來生成低融點的共晶，因此適於作為鋁系硬焊料60的主要成分。 In the aluminum-based brazing filler metal 60 exemplified above, bismuth, antimony, copper, and silver have an effect of reducing the melting point of the hard solder by being added to the aluminum-based brazing filler metal 60, and thus are suitable as the aluminum-based brazing filler metal 60. Add ingredients. Further, since aluminum-copper-silver and aluminum-niobium-silver each form a eutectic having a low melting point by a three-member system, they are suitable as a main component of the aluminum-based brazing filler metal 60.
此外，在前述說明中所例示之鋁系硬焊料60中，係在使用鋁或鋁合金作為金屬構件50時，藉由硬焊時揮發的鎂來還元鋁或鋁合金表面的氧化物而提升硬焊料的潤濕性，因此能提升接合強度。此外，以陶瓷基板10而言，即使在使用氧化鋁系陶瓷時，亦因為分解陶瓷表面的氧化膜而能提升潤濕性，因此能謀求接合強度之提升。因此，鎂係適於作為鋁系硬焊料60的添加成分。 Further, in the aluminum-based brazing filler metal 60 exemplified in the above description, when aluminum or an aluminum alloy is used as the metal member 50, the oxide which is volatilized during brazing is used to regenerate the oxide on the surface of the aluminum or aluminum alloy to enhance the hardness. The wettability of the solder thus improves the joint strength. Further, in the ceramic substrate 10, even when an alumina-based ceramic is used, the wettability can be improved by decomposing the oxide film on the ceramic surface, so that the joint strength can be improved. Therefore, magnesium is suitable as an additive component of the aluminum-based hard solder 60.
以將鋁系硬焊料60配置於陶瓷基板10表面的方法而言，係使用眾所周知之種種方法。例如，亦可藉由網版印刷而將含有有機溶劑及有機接合劑(binder)之漿料狀的硬焊料塗布於陶瓷基板10。此外，亦可將箔片狀之硬焊料(硬焊料箔片)載置於陶瓷基板10上。或者，亦可藉由蒸鍍法或濺鍍(sputter)法來使硬焊料附著於陶瓷基板10的表面。 In the method of disposing the aluminum-based brazing filler metal 60 on the surface of the ceramic substrate 10, various well-known methods are used. For example, a slurry-like hard solder containing an organic solvent and an organic binder may be applied to the ceramic substrate 10 by screen printing. Further, a foil-like hard solder (hard solder foil) may be placed on the ceramic substrate 10. Alternatively, the hard solder may be attached to the surface of the ceramic substrate 10 by a vapor deposition method or a sputtering method.
金屬構件50與陶瓷基板10的硬焊雖然亦會因為要使用之鋁系硬焊料60、金屬構件50及陶瓷基板10而變動，惟仍在真空中或氮氣等惰性氣體氛圍中，藉由加熱在500℃至630℃之溫度範圍進行，較佳為在550℃至600℃之溫度範圍進行。 Although the brazing of the metal member 50 and the ceramic substrate 10 is also changed by the aluminum-based brazing filler metal 60, the metal member 50, and the ceramic substrate 10 to be used, it is still heated in a vacuum or an inert gas atmosphere such as nitrogen. It is carried out at a temperature ranging from 500 ° C to 630 ° C, preferably at a temperature ranging from 550 ° C to 600 ° C.
接著，一面參照第2圖及第3圖，一面說明功率模組100的 製造方法。第2圖係為顯示第1圖所示之功率模組100的製造方法之流程圖。第3圖係為顯示冷噴塗裝置之概略的示意圖。 Next, the power module 100 will be described with reference to FIGS. 2 and 3 . Production method. Fig. 2 is a flow chart showing a method of manufacturing the power module 100 shown in Fig. 1. Figure 3 is a schematic view showing the outline of a cold spray apparatus.
首先，藉由網版印刷等而將鋁系硬焊料60配置於陶瓷基板10的表面(步驟S1)。 First, the aluminum-based brazing filler metal 60 is placed on the surface of the ceramic substrate 10 by screen printing or the like (step S1).
接著，將金屬構件50配置於鋁系硬焊料60上(步驟S2)。在本實施形態中，係透過鋁系硬焊料60而將金屬構件50接合於陶瓷基板10的雙面。可在將鋁系硬焊料60配置於陶瓷基板10的雙面後配置金屬構件50，或者亦可在將鋁系硬焊料60及金屬構件50配置於陶瓷基板10的單面後，將鋁系硬焊料60及金屬構件50配置於陶瓷基板10之另一方的面。 Next, the metal member 50 is placed on the aluminum-based brazing material 60 (step S2). In the present embodiment, the metal member 50 is bonded to both sides of the ceramic substrate 10 through the aluminum-based brazing filler metal 60. The metal member 50 may be disposed after the aluminum-based brazing material 60 is disposed on both sides of the ceramic substrate 10, or the aluminum-based brazing filler metal 60 and the metal member 50 may be disposed on one surface of the ceramic substrate 10, and then the aluminum-based hard material may be hardened. The solder 60 and the metal member 50 are disposed on the other surface of the ceramic substrate 10.
將在表面配置有鋁系硬焊料60及金屬構件50的陶瓷基板10保持於預定時間、預定溫度而於真空中進行熱處理(步驟S3)。藉由該熱處理，鋁系硬焊料60會熔融，能得到陶瓷基板10與金屬基板50的接合體。 The ceramic substrate 10 having the aluminum brazing filler metal 60 and the metal member 50 disposed on the surface thereof is heat-treated in a vacuum for a predetermined time and at a predetermined temperature (step S3). By this heat treatment, the aluminum-based brazing filler metal 60 is melted, and a bonded body of the ceramic substrate 10 and the metal substrate 50 can be obtained.
如第1圖所示，在將金屬構件50接合於陶瓷基板10的雙面時，係對藉由2片金屬構件50包夾於雙面配置有鋁系硬焊料60的陶瓷基板10者進行熱處理，藉以能將金屬構件50接合於陶瓷基板10的雙面。 As shown in Fig. 1, when the metal member 50 is bonded to both surfaces of the ceramic substrate 10, heat treatment is performed on the ceramic substrate 10 in which the aluminum-based brazing material 60 is placed on both sides by the two metal members 50. Thereby, the metal member 50 can be bonded to both sides of the ceramic substrate 10.
接著，藉由冷噴塗法，將金屬皮膜層積層於金屬構件50上而形成散熱構件40(步驟S4)。第3圖係為顯示金屬皮膜層之形成時所使用之冷噴塗裝置的概略之示意圖。 Next, a metal film is laminated on the metal member 50 by a cold spray method to form the heat radiating member 40 (step S4). Fig. 3 is a schematic view showing the outline of a cold spray apparatus used for forming a metal film layer.
第3圖所示之冷噴塗裝置70係具備：將壓縮氣體加熱之氣體加熱器71；收容金屬皮膜層之材料的粉末，並供給至噴槍(spray gun)73之粉末供給裝置72；將經加熱之壓縮氣體及粉末供給裝置 72所供給之材料粉末朝基材噴射之氣體噴嘴74；及分別調節壓縮氣體對於氣體加熱器71及粉末供給裝置72的供給量之閥75及76。 The cold spray device 70 shown in Fig. 3 includes a gas heater 71 that heats a compressed gas, a powder that holds a material of the metal film layer, and supplies the powder to a powder supply device 72 of a spray gun 73; Compressed gas and powder supply device The gas nozzles 74 for injecting the material powder supplied to the substrate 72; and the valves 75 and 76 for adjusting the supply amounts of the compressed gas to the gas heater 71 and the powder supply device 72, respectively.
以壓縮氣體而言，係使用氦氣(helium)、氮氣、空氣等。供給至氣體加熱器71之壓縮氣體係例如為50℃以上，而在加熱至比金屬皮膜層之材料粉末的融點還低之範圍的溫度後，供給至噴槍73。壓縮氣體的加熱溫度，較佳係為300至900℃。 For the compressed gas, helium, nitrogen, air, or the like is used. The compressed gas system supplied to the gas heater 71 is, for example, 50 ° C or higher, and is supplied to the spray gun 73 after being heated to a temperature lower than the melting point of the material powder of the metal film layer. The heating temperature of the compressed gas is preferably from 300 to 900 °C.
另一方面，供給至粉末供給裝置72的壓縮氣體，係以成為預定的送出量之方式將粉末供給裝置72內之材料粉末供給至噴槍73。 On the other hand, the compressed gas supplied to the powder supply device 72 supplies the material powder in the powder supply device 72 to the spray gun 73 so as to be a predetermined discharge amount.
經加熱之壓縮氣體係透過呈漸寬形狀的氣體噴嘴74而成為超音速流(約340m/s以上)。此時之壓縮氣體的氣體壓力，較佳係為1至5MPa左右。這是因為藉由將壓縮氣體的壓力調整到該程度而能謀求金屬皮膜層相對於金屬構件50的密著強度之提升。更佳係亦可在2至4MPa左右的壓力下進行處理。供給至噴槍73的粉末材料係藉由投入至該壓縮氣體的超音速流之中來加速，在固相狀態下直接以高速朝陶瓷基板10上的金屬構件50衝撞並堆積而形成皮膜。另外，只要是能使粉末材料以固相狀態朝向陶瓷基板10衝撞而形成皮膜的裝置，並非限定於第3圖所示之冷噴塗裝置70。 The heated compressed gas system passes through the gas nozzle 74 having a gradually wide shape to become a supersonic flow (about 340 m/s or more). The gas pressure of the compressed gas at this time is preferably about 1 to 5 MPa. This is because the adhesion strength of the metal film layer to the metal member 50 can be improved by adjusting the pressure of the compressed gas to such an extent. More preferably, it can be treated under a pressure of about 2 to 4 MPa. The powder material supplied to the lance 73 is accelerated by being supplied into the supersonic flow of the compressed gas, and collides and accumulates at a high speed toward the metal member 50 on the ceramic substrate 10 at a high speed to form a film. Further, the apparatus for forming a film by causing the powder material to collide with the ceramic substrate 10 in a solid phase state is not limited to the cold spray device 70 shown in Fig. 3 .
在形成散熱構件40後，藉由冷噴塗法將電路層20形成在陶瓷基板10之另一方的面(步驟S5)。電路層20係例如只要在金屬構件50的上層配置形成有電路圖案的金屬遮罩等，並使用形成電路層20的金屬或合金之粉末，藉由冷噴塗裝置70等來進行皮膜 形成即可。 After the heat dissipation member 40 is formed, the circuit layer 20 is formed on the other surface of the ceramic substrate 10 by a cold spray method (step S5). In the circuit layer 20, for example, a metal mask or the like in which a circuit pattern is formed is disposed on the upper surface of the metal member 50, and a powder of a metal or an alloy forming the circuit layer 20 is used, and a film is formed by a cold spray device 70 or the like. It can be formed.
在形成電路層20後，在電路層20上配置鋁系硬焊料60(步驟S6)。 After the circuit layer 20 is formed, the aluminum-based brazing filler metal 60 is placed on the circuit layer 20 (step S6).
之後，將半導體元件30配置在鋁系硬焊料60上(步驟S7)，並進行熱處理(步驟S8)，將半導體元件接合在電路層20上。藉此，完成第1圖所示之功率模組100。 Thereafter, the semiconductor element 30 is placed on the aluminum-based brazing material 60 (step S7), and heat treatment is performed (step S8) to bond the semiconductor element to the circuit layer 20. Thereby, the power module 100 shown in FIG. 1 is completed.
另外，將半導體元件30接合至電路層20的鋁系硬焊料60，亦可使用所混合之金屬及其比例與將金屬基板50接合至陶瓷基板10的鋁系硬焊料60為相同者。然而，將半導體元件30接合至電路層20的鋁系硬焊料60之硬焊溫度，較佳係選擇比將金屬基板50與陶瓷基板10相接合之鋁系硬焊料60的硬焊溫度還低者。 Further, the aluminum-based brazing material 60 in which the semiconductor element 30 is bonded to the circuit layer 20 may be the same as the aluminum-based hard solder 60 in which the metal to be mixed and the ratio thereof are bonded to the ceramic substrate 10 in which the metal substrate 50 is bonded. However, the brazing temperature of the aluminum-based brazing filler metal 60 joining the semiconductor element 30 to the circuit layer 20 is preferably selected to be lower than the brazing temperature of the aluminum-based brazing filler metal 60 joining the metal substrate 50 and the ceramic substrate 10. .
在本實施形態中，藉由鋁系硬焊料60將半導體元件30接合至形成在陶瓷基板10上的電路層20，即能得到接合強度高且散熱特性及耐熱性優異之接合體。 In the present embodiment, the semiconductor element 30 is bonded to the circuit layer 20 formed on the ceramic substrate 10 by the aluminum-based brazing material 60, that is, a bonded body having high bonding strength and excellent heat dissipation characteristics and heat resistance can be obtained.
此外，作為本實施形態之變形例，以陶瓷基板10而言，可舉例說明使用電路層20直接接合至陶瓷基板10之DBC基板(「Direct Bonded Copper基板」(直接接合銅基板)，以下，稱為DBC基板)的功率模組。第4圖係為顯示本發明之實施形態的變形例1之功率模組的構成之剖面圖。 Further, as a modification of the present embodiment, the ceramic substrate 10 can be exemplified by a DBC substrate ("Direct Bonded Copper Substrate" (direct bonded copper substrate) directly bonded to the ceramic substrate 10 using the circuit layer 20, hereinafter, Power module for DBC substrate). Fig. 4 is a cross-sectional view showing the configuration of a power module according to a first modification of the embodiment of the present invention.
第4圖所示之功率模組200係具備：電路層20及銅板81直接接合至陶瓷基板10的DBC基板80；安裝在電路層20上的半導體元件30；及透過銅板81而設置之散熱構件40。 The power module 200 shown in FIG. 4 includes a DBC substrate 80 in which the circuit layer 20 and the copper plate 81 are directly bonded to the ceramic substrate 10, a semiconductor element 30 mounted on the circuit layer 20, and a heat dissipating member provided through the copper plate 81. 40.
DBC基板80的電路層20係由銅或銅合金所形成。與實施形態同樣地，在藉由網版印刷法等將鋁系硬焊料60配置在電路層 20上之後，將半導體元件30配置在鋁系硬焊料60上，藉由在真空中或惰性氣體氛圍中進行熱處理而將半導體元件30接合至電路層20上。 The circuit layer 20 of the DBC substrate 80 is formed of copper or a copper alloy. In the same manner as the embodiment, the aluminum brazing filler metal 60 is placed on the circuit layer by a screen printing method or the like. After the lapse of 20, the semiconductor element 30 is placed on the aluminum-based brazing material 60, and the semiconductor element 30 is bonded to the circuit layer 20 by heat treatment in a vacuum or an inert gas atmosphere.
散熱構件40係藉由鋁系硬焊料60與銅板81接合。散熱構件40往銅板81之接合亦可使用鋁系硬焊料60以外的硬焊料。此外，除了硬焊之外，亦可使用機械緊固構件等而將散熱構件40接合至銅板81。 The heat radiating member 40 is joined to the copper plate 81 by the aluminum brazing filler metal 60. A hard solder other than the aluminum-based brazing material 60 may be used for bonding the heat radiating member 40 to the copper plate 81. Further, in addition to brazing, the heat dissipating member 40 may be joined to the copper plate 81 using a mechanical fastening member or the like.
在本變形例中，係藉由鋁系硬焊料60將半導體元件30接合至經直接接合在DBC基板80上的電路層20，藉以能得到接合強度高且散熱特性及耐熱性優異之接合體。 In the present modification, the semiconductor element 30 is bonded to the circuit layer 20 directly bonded to the DBC substrate 80 by the aluminum-based brazing filler metal 60, whereby a bonded body having high bonding strength and excellent heat dissipation characteristics and heat resistance can be obtained.
再者，作為本實施形態之變形例，以陶瓷基板10而言，可舉例說明電路層20及銅板81藉由硬焊料接合至陶瓷基板10之AMC基板(「Active Metal Brazed Copper基板」(活性金屬銅電路基板)，以下，稱為AMC基板)的功率模組。第5圖係為顯示本發明之實施形態的變形例2之功率模組的構成之剖面圖。 Further, as a modification of the present embodiment, the ceramic substrate 10 can be exemplified by an AMC substrate ("Active Metal Brazed Copper Substrate" (active metal) in which the circuit layer 20 and the copper plate 81 are bonded to the ceramic substrate 10 by hard solder. A copper circuit board), hereinafter referred to as a power module of an AMC board. Fig. 5 is a cross-sectional view showing the configuration of a power module according to a second modification of the embodiment of the present invention.
第5圖所示之功率模組300係具備：電路層20及銅板81藉由鋁系硬焊料60接合至陶瓷基板10的AMC基板82；安裝在電路層20上的半導體元件30；及透過銅板81而設置之散熱構件40。再者，將陶瓷基板10與電路層20及銅板81接合之硬焊料，亦可使用鋁系硬焊料60以外之其他的金屬系硬焊料。 The power module 300 shown in FIG. 5 includes an AMC substrate 82 to which the circuit layer 20 and the copper plate 81 are bonded to the ceramic substrate 10 by the aluminum-based brazing material 60, a semiconductor element 30 mounted on the circuit layer 20, and a copper plate. The heat dissipating member 40 is disposed 81. Further, as the hard solder to which the ceramic substrate 10 is bonded to the circuit layer 20 and the copper plate 81, a metal-based brazing material other than the aluminum-based brazing material 60 may be used.
AMC基板82的電路層20係由銅或銅合金所形成。與實施形態同樣地，在藉由網版印刷法等將鋁系硬焊料60配置在電路層20上之後，將半導體元件30配置在鋁系硬焊料60上，藉由在真空中或惰性氣體氛圍中進行熱處理，將半導體元件30接合至電路 層20上。 The circuit layer 20 of the AMC substrate 82 is formed of copper or a copper alloy. In the same manner as in the embodiment, after the aluminum-based brazing filler metal 60 is placed on the circuit layer 20 by a screen printing method or the like, the semiconductor element 30 is placed on the aluminum-based brazing material 60 by vacuum or an inert gas atmosphere. Heat treatment is performed to bond the semiconductor component 30 to the circuit On layer 20.
散熱構件40係藉由鋁系硬焊料60與銅板81接合。散熱構件40往銅板81之接合亦可使用鋁系硬焊料60以外的硬焊料。此外，除硬焊之外，亦可使用機械緊固構件等而將散熱構件40接合至銅板81。 The heat radiating member 40 is joined to the copper plate 81 by the aluminum brazing filler metal 60. A hard solder other than the aluminum-based brazing material 60 may be used for bonding the heat radiating member 40 to the copper plate 81. Further, in addition to brazing, the heat dissipating member 40 may be joined to the copper plate 81 using a mechanical fastening member or the like.
在本變形例中，係藉由鋁系硬焊料60將半導體元件30接合至經直接接合在AMC基板82上的電路層20，藉以能得到接合強度高且散熱特性及耐熱性優異之接合體。 In the present modification, the semiconductor element 30 is bonded to the circuit layer 20 directly bonded to the AMC substrate 82 by the aluminum-based brazing material 60, whereby a bonded body having high bonding strength and excellent heat dissipation characteristics and heat resistance can be obtained.
藉由本實施形態的接合體所使用之鋁系硬焊料等來製作試片(testpiece)，以測定拉伸強度。 A test piece was prepared by using an aluminum-based hard solder or the like used in the bonded body of the present embodiment to measure tensile strength.
依據鋁系硬焊料(Ge 35mass%-Si 12mass%-Mg 0.7mass%-Cu 0.7mass%-Al剩餘部分，固相線溫度721K，液相線溫度783K)來製作長度40mm、寬度15mm、厚度0.17mm的試片，並根據JIS Z2241進行拉伸試驗。將試驗結果顯示於第1表。另外，第1表所示之拉伸強度係為在n=5之平均值。 According to aluminum hard solder (Ge 35mass%-Si 12mass%-Mg 0.7mass%-Cu 0.7mass%-Al remaining part, solidus temperature 721K, liquidus temperature 783K), the length is 40mm, the width is 15mm, and the thickness is 0.17. A test piece of mm was subjected to a tensile test in accordance with JIS Z2241. The test results are shown in Table 1. Further, the tensile strength shown in the first table is an average value of n=5.
依據Pb-Sn系焊料(Pb 50mass%-Sn 50mass%)來製作長度40mm、寬度10mm、厚度0.09mm的試片，並根據JIS Z2241進行拉伸試驗。將試驗結果顯示於第1表。另外，第1表所示之拉伸強度係為在n=5之平均值。 A test piece having a length of 40 mm, a width of 10 mm, and a thickness of 0.09 mm was produced from a Pb-Sn-based solder (Pb 50 mass% - Sn 50 mass%), and a tensile test was performed in accordance with JIS Z2241. The test results are shown in Table 1. Further, the tensile strength shown in the first table is an average value of n=5.
依據Ag-Sn系焊料(Ag 2.5mass%-Sn 97.5mass%)來製作長度 40mm、寬度10mm、厚度0.11mm的試片，並根據JIS Z2241進行拉伸試驗。將試驗結果顯示於第1表。另外，第1表所示之拉伸強度係為在n=5之平均值。 Length is made according to Ag-Sn solder (Ag 2.5mass%-Sn 97.5mass%) A test piece of 40 mm, a width of 10 mm, and a thickness of 0.11 mm was subjected to a tensile test in accordance with JIS Z2241. The test results are shown in Table 1. Further, the tensile strength shown in the first table is an average value of n=5.
如第1表所示，鋁系硬焊料比起比較例1及比較例2的軟焊填料，係顯示出3倍以上的拉伸強度。從該數值亦可得知，當藉由鋁系硬焊料接合銅板(電路層)與半導體元件時，能提高耐久性。 As shown in the first table, the aluminum-based hard solder exhibited a tensile strength of three times or more as compared with the solder fillers of Comparative Example 1 and Comparative Example 2. From this value, it is also known that when a copper plate (circuit layer) and a semiconductor element are joined by an aluminum-based hard solder, durability can be improved.
關於實施例1、及比較例1和比較例2的各材料，係藉由其材料構成來算出熱傳導率。將所算出之熱傳導率顯示於第2表。 With respect to each of the materials of Example 1 and Comparative Example 1 and Comparative Example 2, the thermal conductivity was calculated from the material configuration. The calculated thermal conductivity is shown in the second table.
如第2表所示，鋁系硬焊料比起比較例1及比較例2的軟焊填料，係顯現出非常大的熱傳導率。從該數值亦可得知，當藉由鋁系硬焊料接合銅板(電路層)與半導體元件時，能提升耐熱特性。 As shown in the second table, the aluminum-based hard solder exhibited a very large thermal conductivity compared to the solder fillers of Comparative Example 1 and Comparative Example 2. From this value, it is also known that when a copper plate (circuit layer) and a semiconductor element are bonded by an aluminum-based hard solder, heat resistance can be improved.
如上所述，本發明之接合體，係有用於要求高接合強度、及 散熱特性和耐熱性之領域。 As described above, the joined body of the present invention is used for requiring high joint strength, and The field of heat dissipation and heat resistance.
10‧‧‧陶瓷基板 10‧‧‧Ceramic substrate
20‧‧‧電路層 20‧‧‧ circuit layer
30‧‧‧半導體元件 30‧‧‧Semiconductor components
40‧‧‧散熱構件 40‧‧‧heating components
50‧‧‧金屬構件 50‧‧‧Metal components
60‧‧‧鋁系硬焊料 60‧‧‧Aluminum hard solder
100‧‧‧功率模組 100‧‧‧Power Module
Claims (9)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011213302A JP2013071873A (en) | 2011-09-28 | 2011-09-28 | Joint body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201324701A true TW201324701A (en) | 2013-06-16 |
Family
ID=47995362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101135780A TW201324701A (en) | 2011-09-28 | 2012-09-28 | Connecting body |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2013071873A (en) |
| TW (1) | TW201324701A (en) |
| WO (1) | WO2013047330A1 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016021561A1 (en) * | 2014-08-08 | 2016-02-11 | 日本発條株式会社 | Composite substrate and power module |
| CN110382738B (en) | 2017-02-24 | 2022-04-08 | 国立研究开发法人物质·材料研究机构 | Method for manufacturing aluminum circuit board |
| CN111566074B (en) * | 2018-01-25 | 2022-04-22 | 三菱综合材料株式会社 | Copper-ceramic joined body, insulated circuit board, method for producing copper-ceramic joined body, and method for producing insulated circuit board |
| JP7192451B2 (en) | 2018-01-25 | 2022-12-20 | 三菱マテリアル株式会社 | COPPER/CERAMIC JOINT, INSULATED CIRCUIT BOARD, METHOD FOR MANUFACTURING COPPER/CERAMIC JOINT, AND METHOD FOR MANUFACTURING INSULATED CIRCUIT BOARD |
| WO2020044590A1 (en) | 2018-08-28 | 2020-03-05 | 三菱マテリアル株式会社 | Copper/ceramic bonded body, insulation circuit board, method for producing copper/ceramic bonded body, and method for manufacturing insulation circuit board |
| JPWO2023203688A1 (en) * | 2022-04-20 | 2023-10-26 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4087090B2 (en) * | 2001-09-18 | 2008-05-14 | 株式会社東芝 | Functional device mounting board |
| JP5102497B2 (en) * | 2007-01-19 | 2012-12-19 | Ｄｏｗａメタルテック株式会社 | Method for manufacturing metal-ceramic bonded circuit board |
| JP5261263B2 (en) * | 2009-03-31 | 2013-08-14 | Ｄｏｗａメタルテック株式会社 | Brazing material and joining method of brazing material |
| JP5564999B2 (en) * | 2010-03-03 | 2014-08-06 | 三菱マテリアル株式会社 | Power module substrate, power module substrate manufacturing method, power module substrate with heat sink, and power module |
-
2011
- 2011-09-28 JP JP2011213302A patent/JP2013071873A/en active Pending
-
2012
- 2012-09-20 WO PCT/JP2012/074103 patent/WO2013047330A1/en active Application Filing
- 2012-09-28 TW TW101135780A patent/TW201324701A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013047330A1 (en) | 2013-04-04 |
| JP2013071873A (en) | 2013-04-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6811719B2 (en) | Method of manufacturing a laminate | |
| KR101572586B1 (en) | Layered body and manufacturing method for layered body | |
| TW201324701A (en) | Connecting body | |
| WO2015064430A1 (en) | Laminate body, insulating cooling plate, power module, and production method for laminate body | |
| EP2641997A1 (en) | Laminate and method for producing laminate | |
| TW201325330A (en) | Wiring substrate and method for manufacturing same and semiconductor device | |
| JP2006278558A (en) | Insulated heat transmission structure and substrate for use of power module | |
| JP6256176B2 (en) | Manufacturing method of joined body, manufacturing method of power module substrate | |
| WO2015019890A1 (en) | Heat sink, power module, and method for manufacturing heat sink | |
| JP2009038162A (en) | Heat radiation component and manufacturing method thereof, and power module | |
| JPWO2016021561A1 (en) | Composite board and power module | |
| WO2016056567A1 (en) | Layered body for radiator member, substrate with heat sink, and method for manufacturing layered body for radiator member | |
| JP2021095327A (en) | Copper/ceramic conjugate, and insulated circuit board | |
| US9349704B2 (en) | Jointed structure and method of manufacturing same | |
| JP2008147307A (en) | Circuit board and semiconductor module having same | |
| JP2009088330A (en) | Semiconductor module | |
| JP2001217362A (en) | Laminated heat dissipating member, power semiconductor device using it, and method of production | |
| JP2009032996A (en) | Manufacturing method of heat radiation structure | |
| JP6378247B2 (en) | LAMINATE, POWER MODULE, AND METHOD FOR PRODUCING LAMINATE | |
| JP4048914B2 (en) | Circuit board manufacturing method and circuit board | |
| JP7538845B2 (en) | LAMINATE AND POWER MODULE | |
| JP5940589B2 (en) | Laminated body and power module | |
| JP2009043814A (en) | Manufacturing method of heat radiation structure | |
| JP2022165044A (en) | Copper/ceramic assembly and insulation circuit board | |
| Zheng | Processing and Properties of Die-attachment on Copper Surface by Low-temperature Sintering of Nanosilver Paste |