JP2001217362A - Laminated heat dissipating member, power semiconductor device using it, and method of production - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a laminated heat dissipating member comprising a bonded body of a metal based composite material and an insulating substrate imparted with a heat sink function excellent in heat dissipation properties and heat cycle characteristics in which cracking due to difference in the coefficient of thermal expansion between the insulating substrate, i.e., a heat dissipating plate, and the metal based composite material is substantially eliminated, a power semiconductor device comprising the laminated heat dissipating member and the laminated heat dissipating member, and a method for producing a power semiconductor device comprising the laminated heat dissipating member. SOLUTION: The laminated heat dissipating member comprising the bonded body of the metal based composite material and the insulating substrate imparted with a heat sink function is produced by a method comprising a step for treating the bonding surface of the insulating substrate previously in order to ensure wettability to a soldering material or a metal, as required, a step for mounting ceramic particles previously surface treated in order to ensure wettability to the soldering material or the metal on the insulating substrate, a step for placing the soldering material on the ceramic particles, and a step for producing the metal based composite material reacted on the soldering material by thermally fusing the soldering material to make it permeate into the gap between the ceramic particles and bonding the metal based composite material to the insulating substrate.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method of manufacturing a metal-based composite of ceramics and metal useful as a heat sink for electronic components, that is, a heat sink, and a metal-based composite manufactured by the method. About.

[0002]

2. Description of the Related Art As a conventional power semiconductor device, for example, a device as shown in FIG. 3 is known. The prior art will be described with reference to FIG. 3, which is a cross-sectional view showing a configuration of a main part in a conventional power semiconductor device. 3, reference numeral 101 denotes a power semiconductor device; 102, a semiconductor chip made of IGBT or the like; 103, a heat radiating plate or heat sink for radiating heat generated in the semiconductor chip 102; 105a is a ceramic plate made of aluminum nitride or the like for insulation from
A first metal electrode 105b provided on the upper surface of the ceramic plate 104; a second metal electrode provided on the lower surface of the ceramic plate 104;
106a is a ceramic plate 104 and a second metal electrode 105
a, a first brazing paste for bonding the ceramic plate 104 and the second metal electrode 105b; and 107a, a second brazing paste for bonding the semiconductor chip 102 and the first metal electrode 105a. 1 solder, 107
b is a second solder for bonding the heat sink or heat sink 103 to the first metal electrode 105b, and 108a is a first solder made of aluminum to be connected to the semiconductor chip 102.
108b is a second metal wire made of aluminum and connected to the first metal electrode 105a.
Covers the semiconductor chip 102, the ceramic plate 104, the first metal electrode 105a and the second metal electrode 105b,
Silicon gel to be sealed.

A conventional power semiconductor device having such a configuration is usually manufactured by the following method. When the conventional power semiconductor device 101 is manufactured, first, a brazing paste to be the first and second brazing pastes 106a and 106b is printed on both surfaces of the ceramic plate 104 with a predetermined thickness. Then, the first and second metal electrodes 105a, 105a,
05b are placed on the solder paste printed on both sides of the ceramic plate 104 at a predetermined temperature,
For example, the first and second metal electrodes are bonded to both surfaces of the ceramic plate 104 by performing a heat treatment at about 850 ° C.

After that, the ceramic plate 104 with the metal electrodes bonded to both surfaces is bonded to the heat sink or the heat sink 103 by high-temperature solder (melting point: about 260 ° C.) to be the second solder 107 b, and the semiconductor chip 102 is bonded. , Low-temperature solder to be the first solder 107a (melting point: about 150 ° C.)
The ceramic plate 10 with metal electrodes bonded to both sides
Adhere to 4. Then, the metal wire serving as the first metal wire 108a is connected to the semiconductor chip 102 by wire bonding, and the metal wire serving as the second metal wire 108b is connected to the metal electrode serving as the first metal electrode 105a by wire bonding. Connecting.

Usually, the heat sink or heat sink 103 on which the semiconductor chip 102, the ceramic plate 104, the first metal electrode 105a, the second metal electrode 105b, etc. are mounted is housed in a package. Then, a silicon gel 109 is vacuum-injected into the package and heat-cured, whereby the semiconductor chip 102 and the ceramic plate 10 are cured.
4. First metal electrode 105a and second metal electrode 10
5b and the like are covered with silicon gel 109 and sealed. Thus, the conventional power semiconductor device 101 is manufactured.

However, since the insulating substrate (104) and the metal electrode (105a, b) are joined via the brazing material (106a, b), the insulating substrate having low thermal expansion and the brazing material having high thermal expansion,
Cracks occur due to the difference in thermal expansion with the metal electrode.
Further, since the insulating substrate (104) and the heat sink (103) are connected via solder, there is a problem that the thermal resistance is high. Further, in addition to accelerated integration and speeding up of LSIs in the field of semiconductors, and in recent years, applications of power devices such as GTOs and IGBTs have been expanded, the heat generation of silicon chips has further increased. Therefore, the circuit board for radiating the heat generated from the silicon chip and the heat sink are also referred to as a heat sink material having a coefficient of thermal expansion close to that of the ceramic circuit board and further improved thermal conductivity. As described above, it is the present situation that higher performance is required.

[0007] The applications of the inverter using the above-described high power module substrate have been spread from robots and motors to various machine tools, railways, elevators, and recently to electric vehicles. In particular, in fields where high reliability is important, such as electric vehicles, for vehicles, Japanese Patent Application Laid-Open Nos. 64-83634 and 9-20
As proposed in Japanese Patent No. 9058, as a heat sink having a coefficient of thermal expansion close to that of a ceramic circuit board, a metal-based composite material using ceramic such as silicon carbide (SiC), aluminum nitride, or silicon nitride having good thermal conductivity is used. It has been proposed as a heat sink material.

In general, the composite is produced by preparing a molded product (preform) such as ceramic particles, ceramic fibers, short fibers, and whiskers, then impregnating with a molten metal, and cooling this. As a method of impregnating the molten metal, a method based on a powder metallurgy method, for example, a die casting method (Japanese Patent Laid-Open No. 5-508350) or a molten metal forging method (squeeze casting method) (Materia, Vol. 36, No. 1) , 1997, pp. 40-46) and a method by spontaneous infiltration (JP-A-2-19736).
No. 8) are known.

On the other hand, as a power semiconductor device, for example, a semiconductor chip made of IGBT or the like, and a thickness of 4 mm made of copper or the like for radiating heat generated from the semiconductor chip
A heat sink or heat sink having a thickness of about 0.6 mm made of aluminum nitride or the like for insulating a semiconductor chip from the heat sink or heat sink is known. A first metal electrode made of copper or the like and having a thickness of about 0.4 mm is bonded to the upper surface of the ceramic plate via a first brazing material having a predetermined thickness. A semiconductor chip is bonded to the upper surface of the metal electrode via a solder having a thickness of about 0.2 mm. On the lower surface of the ceramic plate, a second layer made of copper or the like and having a thickness of about 0.2 mm
Are bonded via a second brazing material having a predetermined thickness. The lower surface of the ceramic plate and the second metal electrode are joined to a heat sink via solder or brazing material.

[0010] However, since the insulating ceramic substrate and the metal electrode are joined via the brazing material, a difference in thermal expansion between the insulating substrate having a low thermal expansion, the brazing material having a high thermal expansion, and the metal electrode is caused. Then, when subjected to a thermal cycle or thermal shock, there is a problem that the power module substrate is warped, the copper circuit is peeled off, and the ceramic substrate is cracked. Further, since the insulating ceramic substrate and the heat sink are connected via solder, there is a problem that heat dissipation is low.

[0011] In addition, a multilayer soldered joint provided with a stress buffer layer other than brazing has low durability characteristics when exposed to a heat cycle of cooling and heating, and also has heat dissipation properties. The thermal resistance increases due to an increase in the number of bonding interfaces that hinder the heat transfer. In addition, since the stress is relaxed by adopting the multi-layer structure, the number of manufacturing steps is inevitably increased, which results in an increase in product cost.

As described in JP-A-10-27059 and JP-A-11-121691,
When manufacturing a heat sink by bonding a metal matrix composite to an insulating substrate, a step of bonding the metal matrix composite to be a heat sink to the insulating substrate is required. It is necessary to interpose a layer. Therefore,
In the case of a bonding structure that takes into account stress buffering, the bonding layer itself is a ductile metal layer with a high coefficient of thermal expansion, so its durability under thermal cycling is low, and the insulating substrate and heat sink when bonding are performed. Since the surface treatment of the material is required, the number of manufacturing steps is increased, and as a result, the manufacturing cost is increased.

[0013] Therefore, in order to improve the durability under thermal cycling, a porous ceramic structure as a metal-ceramic composite having a coefficient of thermal expansion as small as a ceramic circuit board and having a high thermal conductivity is used. A composite obtained by impregnating a body with an Al-based metal containing Mg, wherein an intermediate phase at a boundary between ceramic particles and metal particles in the composite is determined from a transmission electron microscope image. JP-A-11-139889 proposes a composite characterized by having a crystallization region of 20% by area or more in this case. In this case, a high-pressure casting method such as a die-casting method is desirable. Since the metal-based composite material imparting the function is composited by applying a high pressure to the molten metal, there are great disadvantages in terms of equipment and cost.

On the other hand, as proposed in Japanese Patent Application Laid-Open No. 1-273659, the wettability between metal and ceramic is determined by a chemical method utilizing a reaction between a ceramic dispersion material and a molten metal. Therefore, since the molten metal permeates while a reaction occurs at the ceramic / metal interface, there is a problem that the permeation speed is low. In the case of JP-A-11-269577, a metal matrix composite as an insulating substrate and a heat sink is used.
The connection is made via a metal film, or the bonding interface between the insulating substrate and the metal film is connected with a compound containing a sintering aid for the insulating substrate interposed therebetween. Good conductivity, but interfacial thermal resistance that impedes heat dissipation when functioning as a heat sink because a compound containing a metal film and a sintering aid is interposed between the insulating substrate and the metal matrix composite. Increase.

[0015]

As described above, cracks due to the difference in the coefficient of thermal expansion between the insulating substrate and the metal matrix composite as the heat radiating plate are substantially free of heat radiation and heat cycling. A laminated heat dissipating member composed of a joined body of a metal-based composite material and an insulating substrate provided with a heat sink function having excellent characteristics, and a power semiconductor device and a laminated heat dissipating member composed of the laminated heat dissipating member, and the laminated heat dissipating member It is an object of the present invention to provide a method for manufacturing a power semiconductor device.

[0016]

Means for Solving the Problems The present inventors have conducted various studies to achieve the above object, and as a result, have formed a metal-based composite material using a specific ceramic dispersing material and a brazing material. By joining the insulating substrate and the metal matrix composite, there is virtually no cracking due to the difference in the coefficient of thermal expansion between the insulating substrate and the heat sink composed of the metal matrix composite, and the heat dissipation is excellent. It has been found that a composite heat sink can be manufactured, and the present invention has been completed.

That is, according to the present invention, first, a heat sink made of a metal matrix composite material in which ceramic particles are dispersed, an insulating substrate joined to one surface of the heat sink, A laminated heat dissipating member comprising an electrode provided on the other surface of the substrate is provided. Further, the insulating substrate is an insulating substrate whose joint surface may be subjected to a surface treatment in advance in order to ensure wettability with a brazing material or a metal if desired. A metal matrix composite manufactured by reacting a brazing material or metal that has been melt-infiltrated into gaps between ceramic dispersed particles that have been surface-treated to ensure wettability with the brazing material or metal in advance. Is provided.

Further, the heat radiating plate is a metal-based composite material produced by reacting ceramic dispersed particles with a brazing material or metal melt-infiltrated into gaps between the ceramic dispersed particles, wherein the brazing material or Metal is Ti,
A metal group containing at least one active metal selected from the group consisting of Zr, Nb, and Hf, or a metal group that can be produced by previously dispersing the active metal powder in the gaps of the ceramic dispersed particles; A laminated heat dissipation member characterized by being a composite material layer is provided.

The insulating substrate is made of aluminum nitride or silicon nitride, wherein the laminated heat radiating member, the insulating substrate, and an electrode provided on an upper surface of the insulating substrate disperse ceramic particles. The laminated heat dissipating member according to the above is provided, wherein the laminated heat dissipating member is joined via a metal-based composite material layer.

According to the present invention, secondly, a circuit electrode,
A laminated heat radiating member comprising a heat radiating plate and an insulating substrate, a semiconductor chip joined to the circuit electrode formed on the laminated heat radiating member, and a metal wire electrically connected to the semiconductor chip; A metal wire electrically connected to a circuit electrode, the semiconductor chip, the laminated heat dissipating member, and the circuit electrode are a power semiconductor device sealed with an insulating sealing material, wherein the laminated heat dissipating member is A power semiconductor device, which is any one of the above-described laminated heat dissipation members, is provided.

According to the present invention, thirdly, a radiator plate, an insulating substrate joined to one surface of the radiator plate,
A method for manufacturing a laminated heat radiation member comprising electrodes provided on a surface of the insulating substrate, wherein a surface treatment is performed on a bonding surface of the insulating substrate in advance in order to ensure wettability with a brazing material or a metal, if desired. A step of placing ceramic particles which have been surface-treated in advance to ensure wettability with a brazing material or metal on an insulating substrate; a step of disposing a brazing material on the ceramic particles; Heating and melting, infiltrating into the ceramic particle gap, producing a metal matrix composite formed by reacting with the brazing material and joining the metal matrix composite and the insulating substrate. A method for manufacturing a laminated heat dissipation member is provided.

Further, the surface treatment for ensuring wettability to the ceramic particles and / or the insulating substrate is a coating treatment with a metal on at least a part of the surface of the ceramic particles and / or the insulating substrate, and the treatment is electroless. A method for producing a laminated heat radiation member is provided, which is a plating method, a plating method, a sputtering method, or an ion plating method.

Still further, the present invention provides a method for manufacturing a laminated heat dissipating member comprising a heat sink, an insulating substrate joined on one surface of the heat sink, and an electrode provided on the surface of the insulating substrate. Placing ceramic particles on an insulating substrate, and disposing a brazing material containing at least one active metal selected from the group consisting of Ti, Zr, Nb and Hf on the ceramic particles; Heating and melting the brazing material, infiltrating the gap between the ceramic particles, manufacturing a heat sink made of a metal-based composite material formed by the reaction with the brazing material and joining the heat sink and the insulating substrate; and The manufacturing method of the laminated heat dissipation member characterized by including this is provided.

In addition, the present invention provides a method for manufacturing a laminated heat dissipating member comprising a heat sink, an insulating substrate joined to one surface of the heat sink, and electrodes provided on the surface of the insulating substrate. Placing at least one active metal powder selected from the group consisting of Ti, Zr, Nb and Hf and ceramic particles on an insulating substrate; disposing a brazing material on the ceramic particles; Heating and melting the brazing material, infiltrating the ceramic particle gap, producing a metal matrix composite reacted with the brazing material, and joining the metal matrix composite and the insulating substrate. The manufacturing method of the laminated heat dissipating member and the step of simultaneously joining the insulating substrate and the electrode via the brazing material or the metal matrix composite material layer during the heat treatment for joining the heat sink composed of the metal matrix composite and the insulating substrate are further modified. And a method for manufacturing a laminated heat radiation member.

Further, the insulating substrate and the electrode are connected to the insulating substrate bonded to the heat radiating plate made of the metal-based composite material through the brazing material or the metal-based composite material layer. The method for manufacturing a laminated heat radiating member, further comprising a step of bonding by heat treatment at a lower temperature than the step, and an insulating substrate bonded to a heat radiating plate made of a metal-based composite material, on the insulating substrate, A method of manufacturing a laminated heat radiation member is provided, further comprising a step of further forming an electrode at a lower temperature than a bonding step of the heat radiation plate and the insulating substrate.

According to the present invention, fourthly, the step of further forming an electrode at a lower temperature than the bonding step is performed by any one of a plating method, a sputtering method, an ion plating method, and a thermal spraying method, or a combination thereof. A method of manufacturing a laminated heat dissipating member, a step of bonding a semiconductor chip to an electrode of the laminated heat dissipating member, a step of electrically connecting a metal wire to each of the semiconductor chip and the electrode, and , The laminated heat dissipation member,
Injecting an insulating sealing material into the package after the circuit electrode is housed in the package, and a method for manufacturing a power semiconductor device. Further, there is provided a method for manufacturing a power semiconductor device, wherein the laminated heat radiating member is any of the above laminated heat radiating members.

According to the method of the present invention, when forming and joining the insulating substrate and the heat sink material, in other words, the metal-based composite material having a function as a heat sink, even if a specific surface treatment is performed as desired. The ceramic particles and the brazing material are used in combination with the ceramic particles and the brazing material, which are a good insulating substrate and ceramic particles subjected to a specific surface treatment and capable of lowering a specific thermal stress as a dispersing material. Into a metal-based composite material with a certain thickness and heat dissipation, and forming this as a heat sink,
Bonding of the insulating substrate and the heat sink can be performed simultaneously.
Thus, a heat-dissipating laminated member for a power semiconductor device, which is often excellent in desired heat-dissipating properties and heat cycle characteristics without forming a bonding layer that hinders heat conduction, and a power using the same. A semiconductor device can be obtained.

[0028]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described more specifically. In the present specification,
The heat dissipating laminated member is a heat dissipating plate made of a metal matrix composite material in which ceramic particles are dispersed, an insulating substrate joined to one surface of the heat dissipating plate, and an electrode provided on the surface of the insulating substrate. And a laminate comprising: In addition, the composite joint member is almost the same as the heat radiation laminate member, but mainly the former refers to a finished product as a heat sink or a heat sink material, and the latter refers to a semi-finished product in which circuit electrodes are not plated. Point. Furthermore, the metal-based composite casting is mainly used when the metal-based composite refers to a heat-dissipating laminated member manufactured by casting. A metal-based composite is a composite member produced by melt-mixing a brazing filler metal and a dispersant capable of reducing a specific thermal stress, which are ceramic particles subjected to a specific surface treatment. Is referred to.

In the present invention, as the insulating substrate,
A ceramic substrate having a thickness of 0.1 to 2 mm, desirably 0.1 to 2 mm, such as aluminum nitride or silicon nitride, is used. In particular, from the viewpoint of thermal conductivity and securing of bonding strength, silicon nitride disclosed in JP-A-4-212441 and Japanese Patent Application No. 11-1764 filed on June 23, 1999 are disclosed.
Silicon nitride according to the '79 application is preferably used in terms of thermal conductivity and mechanical properties. As the insulating substrate, a substrate that has been subjected to a surface treatment in advance to ensure wettability with a brazing material is preferably used. As ceramic particles for reducing thermal stress, SiC, AlN, Si ₃ N ₄ , having a particle size of 5 to 200 μm, more preferably 10 to 50 μm,
Ceramic particles such as Al ₂ O ₃ are used. Usually, a material subjected to a surface treatment to ensure wettability with a brazing material is used.

At the time of forming the metal matrix composite material as the heat sink and joining the composite material to the insulating substrate, at least one metal or metal alloy selected from Al, Al alloy, copper, and copper alloy is formed on the ceramic particles. Place and use brazing material consisting of This brazing material is placed on ceramic particles uniformly spread on an insulating substrate, and heated and melted to penetrate into the gaps between the ceramic particles and solidify, thereby solidifying a target joint body. That is, a metal-based composite casting as a heat sink can be obtained. In this case, the joining / forming is preferably performed by raising the temperature to a temperature higher than the melting point of the metal or alloy in a furnace in a vacuum or an inert atmosphere. Joining by the inflow of the metal or alloy into the gap between the ceramic particles and the formation of the composite material can be completed in a shorter time as compared with a similar prior art utilizing the above-described reaction, so that the temperature and May be 10 minutes or less.

At this time, as a surface treatment of the insulating substrate or the ceramic particles, Ni, Cu,
What is necessary is just to form a layer of Pd or the like on the surface of the ceramic particles.
However, when an Al alloy is mainly used as a brazing material, electroless Ni plating can be suitably used. On this occasion,
The thickness of the plating layer is 1 μm or less, more preferably 0.5 μm.
It is good to be about μm. When the thickness is 0.5 μm or less, the penetration of the brazing material does not occur suitably, and when the thickness is 1 μm or more, a large amount of intermetallic compound (Al ₃ Ni) is generated, and the thermal conductivity is deteriorated.

In order to ensure the above wettability, T
A method in which an active metal such as i, Nb, Hf, or Zr is added to form a nitride, an oxide, or a carbide of the active metal on the surface of an insulating substrate or ceramic particles can also be used. The amount of the active metal to be added is suitably 0.5 to 20% by weight based on the brazing material. Although it is possible to add the active metal to the brazing material in advance, adding the fine particles of the active metal to the ceramic particles can reduce the amount of the active metal added. This is preferable because the conductivity can be kept high. At this time, it is also possible to use in combination with the above-mentioned method of plating the surface of the ceramic particles.

When reacting and compounding the ceramic dispersion material and the molten brazing material, when using a material that has been surface-treated by electroless plating, sputtering, ion plating, or the like, the surface-treated layer and the molten metal are used. Causes a local exothermic reaction (combustion synthesis reaction) that occurs when they contact and react with each other. For example, if the surface treatment layer is made of electroless Ni
In the -B plating, when the molten metal is an Al-based alloy, Ni aluminide is generated from a reaction formula of Al + Ni → Al ₃ Ni, and the generated heat is an exothermic reaction. Therefore, almost no pressure is required, and the local exothermic reaction as described above greatly improves the wettability between the ceramic particles and the molten metal, so that the penetration rate of the molten metal is increased. The metal matrix composite can be formed in a short time.

In the case where an active metal is used in producing a metal base member by compounding a ceramic dispersion material and a molten metal constituting a brazing material, the active metal (Ti, Zr, Nb, Hf) is very active against oxygen, nitrogen and carbon, so that the wettability between the ceramic dispersing material and the molten metal is improved by the solid solution of the active metal in the molten metal, and the microscopic effect is obtained. , An interface reaction with the active metal-containing molten metal occurs on the surface of the ceramic dispersion material.
That is, the ceramic dispersion material is SiC and the molten metal is C
In the case of a u-Ti alloy, a reaction of SiC + Ti → TiC + Si (in copper) causes an exothermic reaction accompanying the generation of TiC. Thus, due to the local heat generation, the penetration rate of the molten metal is increased as described above, and the metal matrix composite can be manufactured in a very short time.

According to the manufacturing method of the present invention, the number of bonding steps can be reduced, and a metal-based composite material having low thermal expansion and excellent heat dissipation can be manufactured at a very low cost. It can be manufactured integrally with an insulating substrate. That is, the metal-based composite casting according to the present invention can be manufactured in a relatively small number of steps and in a relatively short time as compared with the conventional method.

In the method of the present invention, the electrodes can be simultaneously bonded at the time of production and bonding of a metal matrix composite material to be an insulating substrate and a heat sink, as in Example 18 described later, or It may be formed separately. When separately formed, brazing can be performed using a brazing material that melts at a temperature lower than the manufacturing temperature and the bonding temperature of the metal-based composite material serving as the heat sink. In addition, as a method of separate molding, a new electrode can be produced by printing, thermal spraying, plating, or the like instead of joining. Therefore, as described above, of course, in the present invention, the power semiconductor device in which the electronic element is disposed on the surface on the side on which the heat sink is not mounted among the surfaces of the insulating substrate, and the manufacturing method thereof are also in the technical scope. It goes without saying that it is included within.

[0037]

EXAMPLES Hereinafter, the present invention will be further described with reference to examples. Of course, it is needless to say that the present invention is not limited by this embodiment.

In the following examples, characteristics were measured by the methods described below.

(Thermal cycle characteristics) In the air, after being kept in a low-temperature bath kept at -40 ° C for 30 minutes, left in a constant-temperature bath kept at 25 ° C for 10 minutes,
After the temperature was raised to 25 ° C and held for 30 minutes, the temperature of the thermostat was raised to 2
The operation of lowering the temperature to 5 ° C. and leaving it at this temperature for 10 minutes is defined as one cycle, and five specimens are prepared for each sample, and even one of them may cause cracks on the insulating substrate or at the joint of the heat sink. The thermal cycle characteristics of each sample were evaluated based on the number of cycles at the time when peeling occurred.

(Measurement of Thermal Conductivity) The thermal conductivity of a joined body composed of an insulating substrate and a heat sink material, that is, a metal-based composite material was measured by a laser flash method (manufactured by Vacuum Riko: TC-700).
0).

(Thermal Resistance Characteristics) The water-cooled module shown in FIG. 1 was prepared, and a heater was placed on the surface of the circuit forming portion of the insulating substrate.
g. Cooling water was circulated at a water temperature of 24 ° C. and at a flow rate of 2 l / min. The temperatures of the heater surface and the interface between the sample and the flowing water were measured, and the thermal resistance of the sample was calculated. Thermal resistance is Comparative Example 3
The relative evaluation was performed with the case of 1 as 1.

(Examples 1, 2, 3, and 4) (Preparation of heat sink composite material by insulating substrate / plating surface treatment method) As an insulating substrate, commercially available aluminum nitride powder was sintered with Y ₂ O ₃ . 50 × 40 having a thermal conductivity of 180 W / mK by adding as an agent and firing.
An insulating substrate made of AlN (aluminum nitride) having a size of × 0.635 tmm was produced. In addition, Y is added to commercially available silicon nitride powder.
_By adding ₂ O ₃ and MgO as sintering aids and firing at a predetermined temperature for a predetermined time, 50 × 40 × 0.3 tmm Si ₃ N ₄ having a thermal conductivity of 90 W / mK.
An insulating substrate made of (silicon nitride) was manufactured.

Separately, commercially available SiC particles (average particle diameter of about 50 μm) and pulverized AlN particles (average particle diameter of about 50 μm) are subjected to wet electroless plating to form a Ni powder having a thickness of about 0.5 μm on the particle surface. -B plating was prepared as a ceramic dispersion material. On the other hand, A
One side of the 1N and Si ₃ N ₄ insulating substrates was electroless Ni-B plated to a thickness of about 1 μm. Ni-B of the insulating substrate
The NiC-plated SiC and AlN particles are placed on the plating surface, the thickness is reduced by applying pressure, the packing ratio of the particles is improved, and a commercially available Al brazing sheet (BA4004: Al-10Si-1.5Mg). Then, at 15 ° C./min. At a heating rate of 70
The temperature was raised to 0 ° C, and the pressure was reduced to 7 under a vacuum of 0.00133 Pascal.
After the Al brazing material melted by holding at 00 ° C. for 3 minutes penetrates into the gap between the ceramic dispersion materials, the Al brazing material is melted at 2 ° C./min.
The mixture was cooled to room temperature at a temperature lowering rate of to produce a joined body (metal-based composite casting). AC4A: A instead of BA4004
1-9Si-0.45Mg, AC4C: Al-7Si-
0.35Mg, A5052: Al-0.25Mg, A5
005: Al-0.8Mg or A1 of pure Al composition
050: Al> 99.5%, the same result is obtained.

(Examples 5, 6, 7, 8) (Preparation of Heat Sink Composite by Insulating Substrate / Powder Active Metal Method) As an insulating substrate, commercially available aluminum nitride powder was mixed with Y ₂ O ₃ as a sintering aid. And having a thermal conductivity of 180 W / mK, 50 × 40 ×
An insulating substrate of 0.635 tmm made of AlN (aluminum nitride) was produced. In addition, Y ₂ O ₃ ,
By adding MgO as a sintering aid and firing at a high temperature for a long time, 50 × 4 having a thermal conductivity of 90 W / mK is obtained.
An insulating substrate of 0 × 0.3 tmm made of Si ₃ N ₄ (silicon nitride) was produced.

On the other hand, commercially available SiC particles (average particle size of about 5
0 μm) and pulverized AlN particles (average particle diameter of about 50 μm) and Ti powder (average particle diameter of about 10 to 44 μm)
m) is placed thereon, and the thickness is reduced by applying pressure to improve the packing ratio of the particles.
u (pure oxygen-free copper or tough pitch copper: Cu
> 99.9%). Then, at 15 ° C./min.
The temperature was raised to 1120 ° C. at a temperature rising rate, and after the Cu melted by holding at 1120 ° C. for 3 minutes under a vacuum of 0.00133 Pascal penetrated into the gap between the ceramic dispersion materials,
2 ° C / min. The mixture was cooled to room temperature at a temperature lowering rate of to produce a joined body (metal-based composite casting).

(Examples 9 and 10) (Preparation of Heat Sink Composite by Insulating Substrate / Solid Solution Active Metal Method) As an insulating substrate, Y ₂ O ₃ was added to a commercially available aluminum nitride powder as a sintering aid. By firing, having a thermal conductivity of 180 W / mK, 50 × 40 ×
An insulating substrate of 0.635 tmm made of AlN (aluminum nitride) was produced. In addition, Y ₂ O ₃ ,
By adding MgO as a sintering aid and firing at a high temperature for a long time, 50 × 4 having a thermal conductivity of 90 W / mK is obtained.
An insulating substrate of 0 × 0.3 tmm made of Si ₃ N ₄ (silicon nitride) was produced.

On the other hand, commercially available SiC particles (average particle size of about 5
0 μm) is placed on the upper surface of the heat sink, and Cu
A Ti alloy (an alloy having a Cu-15 wt% Ti composition) was placed thereon. Then, at 15 ° C./min. 1000 at a heating rate of
° C and under vacuum of 0.00133 Pascal,
After the Cu-Ti alloy melted by holding at 00 ° C. for 30 minutes (holding for a long time due to the lower permeation rate compared to the powdered active metal described above) penetrates into the gaps of the ceramic dispersion material, then 2 ° C./min. . The mixture was cooled to room temperature at a temperature lowering rate of to produce a joined body (metal-based composite casting). Example 5 above
In the metal matrix composites of Nos. 1 to 10, the active metal such as Ti segregates near the interface of the ceramic particles, so that the matrix portion has a characteristic of approaching a pure Cu composition having good thermal conductivity.

(Comparative Examples 1 and 2) (Preparation of Insulated Substrate / Pure Cu Bonded Body)
By adding Y ₂ O ₃ as a sintering aid to a commercially available aluminum nitride powder and sintering, 50 × 40 × 0.635 tmm AlN having a thermal conductivity of 180 W / mK is obtained.
An insulating substrate made of (aluminum nitride) was manufactured. Further, by adding Y ₂ O ₃ and MgO as sintering aids to commercially available silicon nitride powder and firing at a high temperature for a long time, a 50 × 40 × 0.3 tmm having a thermal conductivity of 90 W / mK is obtained. Si ₃
An insulating substrate made of N ₄ (silicon nitride) was manufactured.

On the other hand, commercially available Ag is placed on a commercially available pure Cu plate (80 × 50 × 3 mm) having a thermal conductivity of 90 W / mK (oxygen-free copper or tough pitch copper having a pure Cu composition: Cu> 99.9%). -Cu-Ti brazing material (Ag-35Cu-
The above-mentioned insulating substrate on which 1.7 Ti) paste was printed on one surface with a predetermined thickness was placed. Then, at 15 ° C./min. At 850 ° C. at a rate of temperature increase, and bonding at 850 ° C. for 10 minutes under a vacuum of 0.00133 Pascal, and then 2 ° C./min.
To a room temperature at a temperature lowering rate of, to produce a joined body (radiation laminated member).

[0050] The thus produced joined body was subjected to a thermal conductivity and a thermal cycle test. Table 1 shows the thermal conductivity and thermal cycle test results of the joined bodies of Examples 1 to 10 and Comparative Examples 1 and 2. FIG. 4 shows a metal-based composite casting according to the present invention, in other words, an insulating substrate /
5 shows an SEM photograph of a heat sink material, which is an example of an AlN / SiC-Al bonding interface region as an example. From this, the substrate /
A structure in which no intervening layer that hinders thermal resistance is present at the interface of the metal-based composite material. Further, Table 2 shows physical properties (coefficient of thermal expansion and thermal conductivity) of the metal-based composite material functioning as a power module insulating substrate and a heat sink material.

[0051]

[Table 1]

[0052]

[Table 2]

Hereinafter, examples of use of the metal-based composite casting according to the present invention as a circuit board having a heat sink function will be described with reference to examples. (Examples 11, 12, and 13) (Example 1 in which upper electrode is joined with a brazing material having a lower melting point than that of a heat sink material) As an insulating substrate, commercially available aluminum nitride powder is mixed with Y ₂ O ₃ as a sintering aid. And having a thermal conductivity of 180 W / mK, 50 ×
40 x 0.635 tmm AlN (aluminum nitride)
An insulating substrate was manufactured. In addition, Y is added to commercially available silicon nitride powder.
_By adding ₂ O ₃ and MgO as sintering aids and sintering at a high temperature for a long time, it has a thermal conductivity of 90 W / mK,
A 0 × 40 × 0.3 tmm insulating substrate made of Si ₃ N ₄ (silicon nitride) was produced.

Separately, commercially available SiC particles (average particle size of about 50 μm) and pulverized AlN particles (average particle size of about 50 μm) are wet electrolessly plated on the surface of the particles to a thickness of about 0.5 μm Ni. -B plating was applied.
On the other hand, about 1 inch was placed on both sides of the AlN and Si ₃ N ₄ insulating substrates.
Electroless Ni-B plating was applied to a thickness of μm. The NiC-plated SiC and AlN particles are placed on one surface of the insulating substrate, and the thickness is reduced by applying pressure to improve the particle filling rate. An Al brazing material sheet (Al050: Al> 99.5%) composed of pure Al having a higher melting point than the brazing material to be joined was placed. Then, at 15 ° C./min. At a heating rate of 70
The temperature was raised to 0 ° C, and the pressure was reduced to 7 under a vacuum of 0.00133 Pascal.
After the Al brazing material melted by holding at 00 ° C. for 3 minutes penetrates into the gap between the ceramic dispersion materials, the Al brazing material is melted at 2 ° C./min.
The mixture was cooled to room temperature at a temperature lowering rate of to produce a joined body (metal-based composite casting).

Next, a commercially available Al brazing material having a sheet thickness of about 120 μm (BA4
004: Al-10Si-1.5Mg), and a 0.3 mm-thick copper plate was placed thereon at 15 ° C./m
in. At a heating rate of 610 ° C.
After joining at 610 ° C for 10 minutes under a vacuum of 3 Pascal, 2 ° C
/ Min. Then, the composite joining member was obtained by cooling to room temperature at the temperature lowering rate. Next, a circuit-forming resist is printed on the entire surface of the composite joining member, and after selectively curing only those portions which are not to be etched later, the uncured portions are removed, and the exposed copper is etched with an aqueous cupric chloride solution to form a composite laminate. The uppermost copper plate of the member was formed in a circuit pattern. Furthermore, in order to remove the brazing material between the circuits, it is washed with an aqueous solution of acidic ammonium fluoride,
It was further washed several times with water. After that, the resist is peeled off, and finally, a Ni-
P-plating was performed to produce a metal-based composite casting.

(Examples 14 and 15) (Example 2 in which the upper electrode is joined with a brazing material having a lower melting point than the heat sink material) AlN and Si ₃ N ₄ / A SiC-Cu metal-based composite casting was produced. Then, on one side of the insulating substrate, about 1
Electroless Ni-B plating was applied to a thickness of μm. Then, a sheet thickness of about 120 μm was placed on the insulating substrate of the metal-based composite casting.
Commercially available Al brazing material (BA4004: Al-10Si-
1.5Mg), and a 0.3 mm thick copper plate was placed thereon. At a heating rate of 610
° C, under vacuum of 0.00133 Pascal, 61
After bonding at 0 ° C. for 10 minutes, 2 ° C./min. Then, the composite joining member was obtained by cooling to room temperature at the temperature lowering rate.

Next, a circuit-forming resist is printed on the entire surface of the composite joining member, and after selectively hardening only those portions which are not to be etched later, the uncured portions are removed, and the exposed copper is etched with an aqueous cupric chloride solution. The uppermost copper plate of the composite laminated member was formed in a circuit pattern. Further, in order to remove the brazing material between the circuits, it was washed with an aqueous solution of acidic ammonium fluoride and further washed with water several times.

Thereafter, the resist was peeled off, and finally, the surface of the uppermost copper plate (= circuit board) was subjected to Ni-P plating as a protective layer to produce a metal-based composite casting.

(Example 16) (Example 3 in which the upper electrode is joined with a brazing material having a lower melting point than the heat sink material) The Si ₃ N ₄ / SiC—Cu metal A composite casting was made. Then, a commercially available Ag-Cu-Ti brazing material (Ag
-35Cu-1.7Ti) paste at a predetermined thickness, and then printing at 15 ° C / min. At 850 ° C. under a vacuum of 0.00133 Pascal at a temperature of 850 ° C.
After joining for 2 minutes, 2 ° C./min. Then, the composite joining member was obtained by cooling to room temperature at the temperature lowering rate.

Next, a circuit-forming resist is printed on the entire surface of the composite joining member, and after selectively curing only portions that are not to be etched later, the uncured portions are removed, and the exposed copper is etched with a cupric chloride aqueous solution. The uppermost copper plate of the composite laminated member was formed in a circuit pattern. Further, in order to remove the brazing material between the circuits, it was washed with an aqueous solution of acidic ammonium fluoride and further washed with water several times. After that, the resist is stripped off,
Finally, N is applied as a protective layer on the top surface of the copper plate (= circuit board).
IP-plating was performed to produce a metal-based composite casting.

(Example 17) (Example of producing upper electrode by thermal spraying) In the same manner as in the method produced in Example 3, a Si ₃ N ₄ / SiC-Al metal-based composite casting was produced. Next, on a silicon nitride insulating substrate,
Mask the area other than the circuit pattern to 50 μm
After spraying about Ai-Si layer, Cu was HVOF sprayed on the circuit pattern to a thickness of about 0.3 mm. After removing the masking, the copper circuit surface was smooth machined to form a copper circuit. Next, Ni-P plating was applied as a protective layer on the surface of the uppermost copper plate (= circuit board) to produce a metal-based composite casting.

(Example 18) (Example 1 in which preparation of heat sink composite material and joining of upper electrode are performed simultaneously) As an insulating substrate, commercially available silicon nitride powder was used as a sintering aid using Y ₂ O ₃ and MgO. By adding and sintering at a high temperature for a long time, 50 × 40 × 0.3 tmm Si ₃ N ₄ (silicon nitride) having a thermal conductivity of 90 WK / mK
An insulating substrate was manufactured. Separately from this, commercially available SiC particles (average particle size of about 50 μm) are subjected to wet electroless plating.
Ni-B plating having a thickness of about 0.5 μm was applied to the particle surface. On the other hand, electroless Ni-B plating with a thickness of about 1 μm was applied to both surfaces of the Si ₃ N ₄ insulating substrate.

Then, a commercially available Al brazing material (BA4004:
Al-10Si-1.5Mg), and the Si ₃ N ₄ insulated substrate on which the double-sided Ni-B plating is performed is further mounted thereon, and the Ni-B plated SiC particles are mounted thereon.
Reduce the thickness by applying pressure, improve the packing ratio of particles,
A commercially available Al brazing material (BA4004: Al-1)
0Si-1.5Mg) sheet. Then 15
° C / min. At a heating rate of 700 ° C.
The Al brazing material melted by holding at 700 ° C. for 3 minutes under a vacuum of 0133 Pascal penetrates into the gap between the ceramic dispersed materials, and then 2 ° C./min. The mixture was cooled to room temperature at a temperature lowering rate of to produce a joined body (metal-based composite casting).
The bonded body is composed of a silicon nitride insulating substrate and SiC / A serving as a heat sink.
Thus, a heat dissipating laminated member was obtained in which the metal base composite material layer was joined and the silicon nitride insulating substrate and the uppermost 0.3 mm thick copper plate were joined via the Al solder.

Next, a circuit-forming resist is printed on the entire surface of the composite joining member, and after selectively curing only portions that are not to be etched later, the uncured portions are removed, and the exposed copper is etched with a cupric chloride aqueous solution. The uppermost copper plate of the composite laminated member was formed in a circuit pattern. Further, in order to remove the brazing material between the circuits, it was washed with an aqueous solution of acidic ammonium fluoride and further washed with water several times. After that, the resist is stripped off,
Finally, N is applied as a protective layer on the top surface of the copper plate (= circuit board).
IP-plating was performed to produce a metal-based composite casting.

(Example 19) (Example 2 in which preparation of heat sink composite material and joining of upper electrode are performed simultaneously) As an insulating substrate, commercially available silicon nitride powder was used as a sintering aid using Y ₂ O ₃ and MgO. By adding and sintering at a high temperature for a long time, 50 × 40 × 0.3 tmm Si ₃ N ₄ (silicon nitride) having a thermal conductivity of 90 WK / mK
An insulating substrate was manufactured. Separately from this, commercially available SiC particles (average particle size of about 50 μm) are subjected to wet electroless plating.
Ni-B plating having a thickness of about 0.5 μm was applied to the particle surface. On the other hand, electroless Ni-B plating with a thickness of about 1 μm was applied to both surfaces of the Si ₃ N ₄ insulating substrate.

Next, the NiC-plated SiC particles were placed on a copper plate having a thickness of 0.3 mm, and the thickness was reduced by applying pressure to improve the packing ratio of the particles. Brazing material sheet (BA4004: Al-10Si
-1.5Mg), and a silicon nitride insulating substrate having Ni-B plating on both sides was placed thereon. Further, the Ni-B plated SiC particles are placed on the upper surface thereof, the thickness is reduced by applying pressure, the packing ratio of the particles is improved, and a commercially available aluminum brazing material sheet (BA4004: Al-
10Si-1.5Mg). Then 0.00
15 ° C./min. After the temperature was raised to 700 ° C. at a rate of
2 ° C / min. Then, the assembly was gradually cooled down to room temperature at a temperature lowering rate to produce a joined body (radiation laminated member). In the joined body, the silicon nitride insulating substrate and the metal-based composite material layer of SiC / Al brazing to be a heat radiating plate are joined, and the silicon nitride insulating substrate and the uppermost surface of the silicon nitride insulating substrate are combined with each other.
A heat-dissipating laminated member joined to the 3 mm-thick copper plate via the metal matrix composite material layer of SiC / Al brazing was obtained.

Next, a circuit-forming resist is printed on the entire surface of the heat-dissipating laminated member thus obtained, and after selectively curing only the unetched portions, the non-cured portions are removed, and the exposed copper is replaced with cupric chloride. The uppermost copper plate of the heat dissipation laminated member was processed into a circuit pattern by etching with an aqueous solution. Further, in order to remove the brazing material between the circuits, it was washed with an aqueous solution of acidic ammonium fluoride and further washed with water several times. Thereafter, the resist was stripped off, and finally, the surface of the uppermost copper plate (= circuit board) was subjected to Ni-P plating as a protective layer to produce a heat radiation laminated member.

Comparative Example 3 Y ₂ O ₃ , Mg
By adding O as a sintering aid and firing at a high temperature for a long time, a 50 × 40 × having a thermal conductivity of 90 W / mK is obtained.
A 0.3-mm-thick silicon nitride insulating substrate was produced. A commercially available Ag-Cu-Ti brazing material (Ag-35Cu-1.
7Ti) paste is printed at a predetermined thickness, and 0.3
0.00133 mm with a copper plate having a thickness of
A heat treatment was performed at 850 ° C. for 10 minutes under a vacuum of Pascal to obtain a composite bonded body. Next, a circuit-forming resist is printed on the entire surface of the composite joining member, and after selectively curing only a portion that is not etched later, an uncured portion is removed.
The exposed copper was etched with an aqueous solution of cupric chloride to form the uppermost copper plate of the composite laminated member in a circuit pattern. Further, in order to remove the brazing material between the circuits, it was washed with an aqueous solution of acidic ammonium fluoride and further washed with water several times. Thereafter, Ni-P plating was applied to the surface of the metal part as a protective layer to produce a circuit board.

Next, the surface of the circuit board on which the circuit is not formed and the Cu—SiC composite material (80 × 50 × 3 mm: 80 mm × 50 mm × 3 mm) manufactured by the method disclosed in JP-A-11-029379.
(A heat sink) was joined by soldering.

(Comparative Example 4) (Heat radiating plate / wax / substrate / wax / circuit) Y ₂ O ₃ and MgO were added to commercially available silicon nitride powder as a sintering aid, followed by firing at high temperature for a long time. A 50 × 40 × 0.3 tmm silicon nitride insulating substrate having a thermal conductivity of 90 W / mK was produced. Separately, C having a thermal conductivity of 90 W / mK by a method disclosed in JP-A-11-029379.
A u-SiC composite material (80 × 50 × 3 mm: heat sink) was produced. On the upper surface of the heat sink, commercially available Ag-Cu-Ti
A brazing material (Ag-35Cu-1.7Ti) paste was printed with a predetermined thickness, and the silicon nitride insulating substrate was placed on the printed material. Further, a commercially available Ag-Cu
-A Ti brazing material (Ag-35Cu-1.7Ti) paste was printed at a predetermined thickness, and a 0.3 mm thick copper plate was placed on the top surface.

Next, after holding at 850 ° C. for 10 minutes under a vacuum of 0.00133 Pascal, the assembly was gradually cooled to produce a joined body (heat-dissipating laminated member). The joined body is Cu-SiC
The heat radiating plate and the silicon nitride insulating substrate are joined via an Ag-Cu-Ti brazing material layer, and the Ag-Cu-Ti brazing material layer is formed on both the silicon nitride insulating substrate and the uppermost 0.3 mm thick copper plate. Was joined through. Next, a circuit-forming resist is printed on the entire surface of the composite joining member, and after selectively curing only a portion that is not etched later, an uncured portion is removed.
The exposed copper was etched with an aqueous solution of cupric chloride to form the uppermost copper plate of the composite laminated member in a circuit pattern. Further, in order to remove the brazing material between the circuits, it was washed with an aqueous solution of acidic ammonium fluoride and further washed with water several times. Thereafter, the resist was stripped off, and finally, the surface of the uppermost copper plate (= circuit board) was subjected to Ni-P plating as a protective layer to produce a heat radiation laminated member.

Table 3 shows the thermal resistance and thermal cycle test results of the joined bodies obtained in Examples 11 to 19 and Comparative Examples 3 and 4.

[0073]

[Table 3]

(Example 20) A commercially available Si IGBT element (power semiconductor) was joined to the circuit electrode of the heat radiation laminated member manufactured in Example 1 by low-temperature soldering. Next, a metal wire was electrically connected to a terminal of the IGBT element by a wire bonding method, and a metal wire was similarly connected to the circuit electrode. Thereafter, the heat dissipating laminated member on which the IGBT element was mounted was housed in a package.
Next, a commercially available silicone gel for potting is injected and cured into the package, and the heat dissipation laminated member on which the IGBT element is mounted is sealed to increase the electrical insulation and increase the mechanical reliability. A semiconductor device was manufactured.

[0075]

EFFECTS OF THE INVENTION The metal-based composite casting according to the present invention is characterized in that, at the time of forming and joining a metal-based composite material as an insulating substrate and a heat sink, a specific surface-treated insulating substrate and a specific surface treatment are applied. By using a combination of a dispersing material capable of lowering a specific thermal stress and a brazing material, the ceramic particles and the brazing material are made of a metal substrate having a certain thickness and heat radiation. Instead of using a composite material, this can be formed as a radiator plate, and the insulating substrate and the radiator plate can be joined at the same time. Thus, as described above, a heat sink having a thermal conductivity, in other words, a heat sink having a reduced coefficient of thermal expansion while maintaining a desired thermal conductivity required as a heat sink, is often used as an obstacle to heat conduction. By directly bonding to the insulating substrate without forming a bonding layer
It is possible to obtain a heat-dissipating laminated member for a power semiconductor device excellent in desired heat-dissipating properties and heat cycle characteristics, and a power semiconductor device using the heat-dissipating laminated member.

[Brief description of the drawings]

FIG. 1 is a schematic view of a water-cooled module used for a test.

FIG. 2 is a sectional view showing a configuration of a main part of a power semiconductor device according to the present invention.

FIG. 3 is a cross-sectional view illustrating a configuration of a main part of a power semiconductor device according to a conventional example.

FIG. 4 shows an example of a metal-based composite casting made of Al / SiC-Al, which is an example of a metal-based composite casting according to the present invention, in which an insulating substrate and a metal-based composite are bonded in an AlN / SiC-Al bonding interface region. It is a SEM photograph which shows a joining condition.

[Explanation of symbols]

1. Electrode circuit, 2. Brazing material or metal matrix composite material layer,
Reference numeral 3 denotes an insulating substrate, 4 denotes a metal-based composite heat sink (heat sink material), 11 denotes a heater, 12 denotes a module, 13 denotes a flow path,
14: Water bath with pump, 15: Flow meter.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Kiyoshi Shinki 2-56, Suda-cho, Mizuho-ku, Nagoya-shi, Aichi Japan Inside Nihon Insulators Co., Ltd. No. 56 Inside Nihon Insulators Co., Ltd. (72) Inventor Takuma Makino 2 56 No. 56 Sudacho, Mizuho-ku, Nagoya-shi, Aichi F-term in Nihon Insulators Co., Ltd. 4G026 BA16 BA17 BB22 BB35 BC01 BF16 BF20 BF24 BG02 BH07 5F036 AA01 BA23 BB01 BC06 BD00 BD13 BD14

Claims (16)

[Claims] 1. A heat sink made of a metal matrix composite material in which ceramic particles are dispersed, an insulating substrate joined to one surface of the heat sink, and provided on the other surface of the insulating substrate. A laminated heat dissipating member comprising electrodes. 2. The insulating substrate is an insulating substrate whose joint surface may be subjected to a surface treatment in advance in order to ensure wettability with a brazing material or a metal, if desired, and is made of the metal-based composite material. The heat radiating plate is a metal matrix composite material produced by reacting the brazing material or metal that has been melt-infiltrated into the gaps between the ceramic dispersed particles that have been surface-treated in advance to ensure wettability with the brazing material or metal. The laminated heat radiating member according to claim 1, wherein: 3. The radiator plate comprises ceramic dispersed particles,
A metal-based composite material layer manufactured by reacting a brazing material or metal melt-infiltrated into the gaps of the ceramic dispersed particles, wherein the brazing material or metal further comprises Ti, Zr, N
b, and a metal matrix composite containing at least one active metal selected from the group consisting of Hf, or produced by previously dispersing the active metal powder in the gaps between the ceramic dispersed particles. The laminated heat radiation member according to claim 1, wherein: 4. The laminated heat radiating member according to claim 1, wherein said insulating substrate is made of aluminum nitride or silicon nitride. 5. The method according to claim 1, wherein the insulating substrate and an electrode provided on a surface of the insulating substrate are joined via a metal-based composite material layer in which ceramic particles are dispersed. The laminated heat radiation member according to any one of claims 1 to 4. 6. A laminated heat radiating member comprising a circuit electrode, a heat radiating plate and an insulating substrate, a semiconductor chip joined to the circuit electrode formed on the laminated heat radiating member, and electrically connected to the semiconductor chip. Power semiconductor device, comprising a metal wire electrically connected to the circuit electrode, and the semiconductor chip, the laminated heat dissipating member, and the circuit electrode sealed with an insulating sealing material. A power semiconductor device, wherein the laminated heat radiating member is the laminated heat radiating member according to any one of claims 1 to 5. 7. A method for manufacturing a laminated heat radiation member, comprising: a heat radiation plate; an insulating substrate joined to one surface of the heat radiation plate; and electrodes provided on the surface of the insulating substrate. If necessary, a step of surface-treating the joint surface of the insulating substrate in advance to ensure wettability with the brazing material or metal, and insulating the ceramic particles that have been surface-treated in advance to ensure wettability with the brazing material or metal. Placing on a substrate, placing a brazing material on the ceramic particles, heating and melting the brazing material, penetrating into the gap between the ceramic particles, and forming a metal substrate formed by a reaction with the brazing material. Producing a composite material and bonding the metal-based composite material to an insulating substrate. 8. The surface treatment for securing wettability to the ceramic particles and / or the insulating substrate is a coating treatment with a metal on at least a part of the surface of the ceramic particles and / or the insulating substrate, and the treatment is electroless. Plating method,
The method according to claim 7, wherein the method is plating, sputtering, or ion plating. 9. A method for manufacturing a laminated heat radiating member comprising: a heat radiating plate; an insulating substrate joined to one surface of the heat radiating plate; and electrodes provided on the surface of the insulating substrate. Placing the particles on an insulating substrate, disposing a brazing material containing at least one active metal selected from the group consisting of Ti, Zr, Nb, and Hf on the ceramic particles; Heating and melting the brazing material, infiltrating the gap between the ceramic particles, manufacturing a heat sink made of a metal matrix composite formed by reaction with the brazing material, and joining the heat sink and the insulating substrate. A method for manufacturing a laminated heat dissipating member, comprising: 10. A method for manufacturing a laminated heat radiating member comprising a heat radiating plate, an insulating substrate joined to one surface of the heat radiating plate, and electrodes provided on the surface of the insulating substrate.
Placing at least one active metal powder selected from the group consisting of Ti, Zr, Nb and Hf and ceramic particles on an insulating substrate; disposing a brazing material on the ceramic particles; Heat and melt the brazing material,
Producing a metal matrix composite that has been permeated into the gaps between the ceramic particles and reacted with the brazing material, and joining the metal matrix composite and the insulating substrate. 11. The method according to claim 1, further comprising the step of simultaneously bonding the insulating substrate and the electrode via a brazing material or a metal-based composite material layer at the time of heat treatment for bonding the heat sink made of the metal-based composite material and the insulating substrate. Any one of claims 7 to 10
13. The method for producing a laminated heat radiation member according to the above item. 12. An insulating substrate joined to a radiator plate made of a metal-based composite material is bonded to the radiator plate and the insulating substrate via a brazing material or a metal-based composite material layer. The method according to any one of claims 7 to 11, further comprising a step of joining by heat treatment at a temperature lower than the step.
13. The method for producing a laminated heat radiation member according to the above item. 13. The method according to claim 1, further comprising the step of: further forming an electrode on the insulating substrate at a lower temperature than the bonding step between the heat radiating plate and the insulating substrate with respect to the insulating substrate bonded to the heat radiating plate made of the metal-based composite material. 13. The method according to claim 7, wherein:
The method for manufacturing a laminated heat radiation member according to any one of the above. 14. The method according to claim 1, wherein the step of further forming an electrode at a lower temperature than the bonding step is any one of plating, sputtering, ion plating, and thermal spraying, or a combination thereof. Item 13
4. The method for manufacturing a laminated heat radiation member according to item 1. 15. A step of bonding a semiconductor chip to an electrode of the laminated heat dissipation member, a step of electrically connecting a metal wire to each of the semiconductor chip and the electrode, and packaging the semiconductor chip, the laminated heat dissipation member, and the circuit electrode. And a step of injecting an insulating sealing material into the package after being housed in the power semiconductor device. 16. The method for manufacturing a power semiconductor device according to claim 15, wherein said laminated heat radiation member is manufactured by the method according to any one of claims 7 to 14.