CN102569486A - 一种肖特基栅场效应紫外探测器及其制备方法 - Google Patents
一种肖特基栅场效应紫外探测器及其制备方法 Download PDFInfo
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- CN102569486A CN102569486A CN2012100139918A CN201210013991A CN102569486A CN 102569486 A CN102569486 A CN 102569486A CN 2012100139918 A CN2012100139918 A CN 2012100139918A CN 201210013991 A CN201210013991 A CN 201210013991A CN 102569486 A CN102569486 A CN 102569486A
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- ultraviolet detector
- field effect
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- schottky
- gate field
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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CN201210013991.8A CN102569486B (zh) | 2012-01-17 | 2012-01-17 | 一种肖特基栅场效应紫外探测器及其制备方法 |
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CN201210013991.8A CN102569486B (zh) | 2012-01-17 | 2012-01-17 | 一种肖特基栅场效应紫外探测器及其制备方法 |
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CN102569486A true CN102569486A (zh) | 2012-07-11 |
CN102569486B CN102569486B (zh) | 2014-07-09 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104900745A (zh) * | 2015-05-26 | 2015-09-09 | 北京工业大学 | 一种基于高电子迁移率晶体管的光谱探测器及其制备方法 |
CN106876516A (zh) * | 2017-02-15 | 2017-06-20 | 上海大学 | 基于ZnO薄膜晶体管的集成式全固态中子探测器及其制备方法 |
CN109698250A (zh) * | 2018-12-26 | 2019-04-30 | 中南大学 | 栅极调控AlGaN基金属-半导体-金属紫外探测器及制备方法 |
CN109817757A (zh) * | 2019-01-18 | 2019-05-28 | 中国空间技术研究院 | 一种二硒化钨薄片/氧化锌纳米带结型场效应晶体管光电探测器及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010034116A1 (en) * | 2000-03-22 | 2001-10-25 | Lg Electronics Inc. | Semiconductor device with schottky contact and method for forming the same |
EP1172858A1 (en) * | 1999-03-25 | 2002-01-16 | Japan Science and Technology Corporation | Semiconductor device |
US20050145970A1 (en) * | 2002-01-04 | 2005-07-07 | Rutgers, The State University Of New Jersey | Schottky diode with silver layer contacting the ZnO and MgxZn1-xO films |
CN1917202A (zh) * | 2005-08-16 | 2007-02-21 | 三星电子株式会社 | 布线结构、布线制造方法、薄膜晶体管基板及其制造方法 |
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2012
- 2012-01-17 CN CN201210013991.8A patent/CN102569486B/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1172858A1 (en) * | 1999-03-25 | 2002-01-16 | Japan Science and Technology Corporation | Semiconductor device |
US6878962B1 (en) * | 1999-03-25 | 2005-04-12 | Japan Science And Technology Corp. | Semiconductor device |
US20010034116A1 (en) * | 2000-03-22 | 2001-10-25 | Lg Electronics Inc. | Semiconductor device with schottky contact and method for forming the same |
US20050145970A1 (en) * | 2002-01-04 | 2005-07-07 | Rutgers, The State University Of New Jersey | Schottky diode with silver layer contacting the ZnO and MgxZn1-xO films |
CN1917202A (zh) * | 2005-08-16 | 2007-02-21 | 三星电子株式会社 | 布线结构、布线制造方法、薄膜晶体管基板及其制造方法 |
Non-Patent Citations (1)
Title |
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张新安等: "L-MBE法制备以ZnO为沟道层的薄膜晶体管", 《半导体学报》, vol. 27, no. 6, 30 June 2006 (2006-06-30), pages 1051 - 1054 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104900745A (zh) * | 2015-05-26 | 2015-09-09 | 北京工业大学 | 一种基于高电子迁移率晶体管的光谱探测器及其制备方法 |
CN106876516A (zh) * | 2017-02-15 | 2017-06-20 | 上海大学 | 基于ZnO薄膜晶体管的集成式全固态中子探测器及其制备方法 |
CN109698250A (zh) * | 2018-12-26 | 2019-04-30 | 中南大学 | 栅极调控AlGaN基金属-半导体-金属紫外探测器及制备方法 |
CN109698250B (zh) * | 2018-12-26 | 2021-01-01 | 中南大学 | 栅极调控AlGaN基金属-半导体-金属紫外探测器及制备方法 |
CN109817757A (zh) * | 2019-01-18 | 2019-05-28 | 中国空间技术研究院 | 一种二硒化钨薄片/氧化锌纳米带结型场效应晶体管光电探测器及其制备方法 |
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CN102569486B (zh) | 2014-07-09 |
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Inventor after: Zhang Xinan Inventor after: Hai Fusheng Inventor after: Zheng Haiwu Inventor after: Dang Yujing Inventor after: Ding Linghong Inventor after: Jiao Yang Inventor after: Zhang Weifeng Inventor before: Zhang Xinan Inventor before: Hai Fusheng Inventor before: Dang Yujing Inventor before: Ding Linghong Inventor before: Jiao Yang Inventor before: Zhang Weifeng |
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Free format text: CORRECT: INVENTOR; FROM: ZHANG XINAN HAI FUSHENG DANG YUJING DING LINGHONG JIAO YANG ZHANG WEIFENG TO: ZHANG XINAN HAI FUSHENG ZHENG HAIWU DANG YUJING DING LINGHONG JIAO YANG ZHANG WEIFENG |
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