CN102569181B - 一种碳纳米管束垂直互连的制作方法 - Google Patents
一种碳纳米管束垂直互连的制作方法 Download PDFInfo
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- CN102569181B CN102569181B CN 201210038865 CN201210038865A CN102569181B CN 102569181 B CN102569181 B CN 102569181B CN 201210038865 CN201210038865 CN 201210038865 CN 201210038865 A CN201210038865 A CN 201210038865A CN 102569181 B CN102569181 B CN 102569181B
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- 238000000034 method Methods 0.000 title claims abstract description 64
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 58
- 239000002041 carbon nanotube Substances 0.000 title claims abstract description 58
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 70
- 239000010703 silicon Substances 0.000 claims abstract description 70
- 229910052751 metal Inorganic materials 0.000 claims abstract description 47
- 239000002184 metal Substances 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 42
- 238000000280 densification Methods 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 70
- 230000004888 barrier function Effects 0.000 claims description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 19
- 230000003197 catalytic effect Effects 0.000 claims description 16
- 239000003795 chemical substances by application Substances 0.000 claims description 16
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 12
- 238000005240 physical vapour deposition Methods 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 238000005498 polishing Methods 0.000 claims description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 238000004528 spin coating Methods 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 229910052742 iron Inorganic materials 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical group [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 238000000992 sputter etching Methods 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 239000012467 final product Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 238000000608 laser ablation Methods 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- 239000003054 catalyst Substances 0.000 abstract description 9
- 230000008569 process Effects 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract description 3
- 239000011799 hole material Substances 0.000 description 44
- 238000005516 engineering process Methods 0.000 description 7
- 238000011049 filling Methods 0.000 description 7
- 239000003863 metallic catalyst Substances 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- 238000002161 passivation Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 239000002322 conducting polymer Substances 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000708 deep reactive-ion etching Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910021404 metallic carbon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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CN 201210038865 CN102569181B (zh) | 2011-12-15 | 2012-02-20 | 一种碳纳米管束垂直互连的制作方法 |
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CN201110419408 | 2011-12-15 | ||
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CN 201210038865 CN102569181B (zh) | 2011-12-15 | 2012-02-20 | 一种碳纳米管束垂直互连的制作方法 |
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CN102569181B true CN102569181B (zh) | 2013-11-06 |
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Families Citing this family (8)
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CN103879951B (zh) * | 2012-12-19 | 2016-01-06 | 中国科学院上海微系统与信息技术研究所 | 硅通孔的制作方法 |
CN103367185B (zh) * | 2013-07-25 | 2016-03-09 | 华进半导体封装先导技术研发中心有限公司 | 一种采用转移法制作碳纳米管柔性微凸点的方法 |
CN105097653B (zh) * | 2014-05-07 | 2018-05-08 | 中芯国际集成电路制造(上海)有限公司 | 一种硅通孔的结构及其制作方法 |
CN105304611B (zh) * | 2015-12-01 | 2018-06-22 | 北京理工大学 | 一种铜纳米管垂直互连结构及其制作方法 |
US9991215B1 (en) * | 2017-01-19 | 2018-06-05 | Nanya Technology Corporation | Semiconductor structure with through substrate via and manufacturing method thereof |
CN107658263B (zh) * | 2017-09-28 | 2021-01-22 | 江苏师范大学 | 一种基于碳纳米材料复合结构的三维硅通孔垂直互联方法 |
CN109321143A (zh) * | 2018-08-28 | 2019-02-12 | 上海大学 | 垂直碳纳米管阵列与纳米银浆复合互连材料及其制备方法 |
CN109399612B (zh) * | 2018-10-30 | 2020-08-21 | 国家纳米科学中心 | 一种悬空碳纳米管阵列及其制备方法 |
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CN101872730A (zh) * | 2009-11-30 | 2010-10-27 | 上海上大瑞沪微系统集成技术有限公司 | 用碳纳米管簇填充硅通孔的方法 |
CN102130091A (zh) * | 2010-12-17 | 2011-07-20 | 天津理工大学 | 一种用于集成电路芯片的复合通孔互连结构及其制备方法 |
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US7084507B2 (en) * | 2001-05-02 | 2006-08-01 | Fujitsu Limited | Integrated circuit device and method of producing the same |
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CN101872730A (zh) * | 2009-11-30 | 2010-10-27 | 上海上大瑞沪微系统集成技术有限公司 | 用碳纳米管簇填充硅通孔的方法 |
CN102130091A (zh) * | 2010-12-17 | 2011-07-20 | 天津理工大学 | 一种用于集成电路芯片的复合通孔互连结构及其制备方法 |
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