CN102569163B - 一种基于AlN埋绝缘层的晶圆级单轴应变SOI晶圆的制作方法 - Google Patents
一种基于AlN埋绝缘层的晶圆级单轴应变SOI晶圆的制作方法 Download PDFInfo
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CN102569163A CN102569163A (zh) | 2012-07-11 |
CN102569163B true CN102569163B (zh) | 2014-12-10 |
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US10151195B2 (en) * | 2014-04-29 | 2018-12-11 | China Petroleum & Chemical Corporation | Electronic devices for high temperature drilling operations |
CN106098609B (zh) * | 2016-06-20 | 2019-03-26 | 西安电子科技大学 | 基于非晶化与尺度效应的AlN埋绝缘层上晶圆级单轴应变Si的制作方法 |
CN106098613B (zh) * | 2016-06-20 | 2019-03-26 | 西安电子科技大学 | 基于非晶化与尺度效应的AlN埋绝缘层上晶圆级单轴应变SiGe的制作方法 |
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Title |
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《晶圆级机械致单轴应变Si技术研究》;肖哲;《中国优秀硕士学位论文全文数据库》;20101115(第11期);39-62 * |
肖哲.《晶圆级机械致单轴应变Si技术研究》.《中国优秀硕士学位论文全文数据库》.2010,(第11期),39-62. * |
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Inventor after: Dai Xianying Inventor after: Ning Jing Inventor after: Ji Yao Inventor after: Deng Wenhong Inventor after: Liu Ying Inventor after: Zheng Ruochuan Inventor after: Zhang Heming Inventor after: Hao Yue Inventor before: Ning Jing Inventor before: Dai Xianying Inventor before: Ji Yao Inventor before: Deng Wenhong Inventor before: Liu Ying Inventor before: Zheng Ruochuan Inventor before: Zhang Heming Inventor before: Hao Yue |
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