CN102569163A - 一种基于AlN埋绝缘层的晶圆级单轴应变SOI晶圆的制作方法 - Google Patents
一种基于AlN埋绝缘层的晶圆级单轴应变SOI晶圆的制作方法 Download PDFInfo
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CN201110361513.1A CN102569163B (zh) | 2011-11-16 | 2011-11-16 | 一种基于AlN埋绝缘层的晶圆级单轴应变SOI晶圆的制作方法 |
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CN102569163A true CN102569163A (zh) | 2012-07-11 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105050322A (zh) * | 2014-04-29 | 2015-11-11 | 中国石油化工股份有限公司 | 用于高温钻井作业的电子装置 |
CN106098613A (zh) * | 2016-06-20 | 2016-11-09 | 西安电子科技大学 | 基于非晶化与尺度效应的AlN埋绝缘层上晶圆级单轴应变SiGe的制作方法 |
CN106098609A (zh) * | 2016-06-20 | 2016-11-09 | 西安电子科技大学 | 基于非晶化与尺度效应的AlN埋绝缘层上晶圆级单轴应变Si的制作方法 |
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Non-Patent Citations (1)
Title |
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肖哲: "《晶圆级机械致单轴应变Si技术研究》", 《中国优秀硕士学位论文全文数据库》 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105050322A (zh) * | 2014-04-29 | 2015-11-11 | 中国石油化工股份有限公司 | 用于高温钻井作业的电子装置 |
CN106098613A (zh) * | 2016-06-20 | 2016-11-09 | 西安电子科技大学 | 基于非晶化与尺度效应的AlN埋绝缘层上晶圆级单轴应变SiGe的制作方法 |
CN106098609A (zh) * | 2016-06-20 | 2016-11-09 | 西安电子科技大学 | 基于非晶化与尺度效应的AlN埋绝缘层上晶圆级单轴应变Si的制作方法 |
CN106098609B (zh) * | 2016-06-20 | 2019-03-26 | 西安电子科技大学 | 基于非晶化与尺度效应的AlN埋绝缘层上晶圆级单轴应变Si的制作方法 |
CN106098613B (zh) * | 2016-06-20 | 2019-03-26 | 西安电子科技大学 | 基于非晶化与尺度效应的AlN埋绝缘层上晶圆级单轴应变SiGe的制作方法 |
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Inventor after: Dai Xianying Inventor after: Ning Jing Inventor after: Ji Yao Inventor after: Deng Wenhong Inventor after: Liu Ying Inventor after: Zheng Ruochuan Inventor after: Zhang Heming Inventor after: Hao Yue Inventor before: Ning Jing Inventor before: Dai Xianying Inventor before: Ji Yao Inventor before: Deng Wenhong Inventor before: Liu Ying Inventor before: Zheng Ruochuan Inventor before: Zhang Heming Inventor before: Hao Yue |
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