CN102564378B - Error compensation method for measuring film thickness of wafer of wafer stage - Google Patents
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Abstract
The invention provides an error compensation method for measuring film thickness of a wafer of a wafer stage. The error compensation method comprises the following steps of: measuring system errors; controlling a lifting cylinder to lift so as to receive the wafer, and starting a sucker to suck the wafer; controlling the lifting cylinder to lower; controlling a motor to rotate so as to detect the notch of the wafer, and establishing a wafer polar coordinate system according to the notch of the wafer; controlling the motor to stop after establishing the wafer polar coordinate system, returning to the notch of the wafer, controlling the sucker to unload the wafer, and controlling the lifting cylinder to lift; controlling the motor to rotate so as to detect a zero site of the motor, and establishing a motor polar coordinate system according to the zero site of the motor; controlling the motor to stop, returning to the zero site of the motor, controlling the sucker to suck the wafer and controlling the lifting cylinder to lower; and measuring the wafer by means of a wafer measuring system so as to acquire an initial film thickness value, and compensating the initial film thickness value according to the system errors. According to the error compensation method, the errors of the measured film thickness of the wafer can be compensated, and more accurate film thickness of the wafer can be acquired.
Description
Technical field
The present invention relates to semiconductor manufacturing facility technical field, the error compensating method that particularly a kind of crystal column surface film thickness for wafer platform is measured.
Background technology
After polishing wafer finishes, need to be grasped the flatness situation of the polishing of crystal column surface.Now, need to carry out measuring surface form to wafer.Traditional measuring method comprises two kinds of modes: probe is mobile and wafer is motionless, or the motionless and wafer of popping one's head in moves.But, when wafer is rotated, be conventionally accompanied by the impact of end jumping and disc surfaces out-of-flatness equal error, thus the accuracy that impact is measured.The film thickness value measuring is by the way rough, accurate not.
Summary of the invention
Object of the present invention is intended at least solve one of above-mentioned technological deficiency, the special error compensating method that proposes a kind of measurement of the wafer film thickness degree for wafer platform, the film thickness that the method can realize the wafer to measuring carries out error compensation, thereby can obtain the film thickness value of more accurate wafer.
For achieving the above object, the error compensating method that embodiments of the invention provide a kind of wafer film thickness degree for wafer platform to measure, comprise the steps: measuring system error and deposit described systematic error in wafer measuring system, wherein, the error described in the driven by motor that described systematic error is described wafer platform during the turntable rotation of wafer platform; Described in the control system control of described wafer platform, the lift cylinder of wafer platform rises to receive wafer, and the sucker that starts described wafer platform adsorbs described wafer, adsorbing after described wafer, the lift cylinder of wafer platform declines described in the control system control of described wafer platform; Described in the control system control of described wafer platform, the motor of wafer platform rotates to detect the breach of described wafer, and sets up wafer polar coordinate system according to the breach of described wafer; Setting up after described wafer polar coordinate system, the motor of wafer platform stops and being retracted into the breach of described wafer described in described control system control, and the lift cylinder that the sucker of controlling described wafer platform unloads described wafer and controls described wafer platform rises; Described in the control system control of described wafer platform, the motor of wafer platform rotates to detect the zero point of described motor, and sets up motor polar coordinate system according to the zero point of described motor; Setting up after described motor polar coordinate system, the motor of wafer platform stops and being retracted into the zero point of described motor described in described control system control, and the lift cylinder that the sucker of controlling described wafer platform adsorbs described wafer and controls described wafer platform declines; Utilize described wafer measuring system to measure to obtain initial film thickness value to described wafer, and according to described systematic error, described initial film thickness value is compensated, obtain thickness modified value.
The error compensating method of measuring according to the wafer film thickness degree for wafer platform of the embodiment of the present invention, shift to an earlier date measuring system error and deposit system database in, when actual measurement, by wafer is done, adsorb, the motion such as rotation, unloading, lifting, absorption, realize wafer polar coordinate system and overlap with motor polar coordinate system.Then carry out wafer measurement, calling system database carries out error compensation to the measured value obtaining, and finally tries to achieve the accurate metal film on surface one-tenth-value thickness 1/10 of wafer.The present invention by the mechanical motion of hardware can realize to actual measurement to the film thickness of wafer carry out error compensation, thereby the accurate film thickness value after can being compensated is and lower to the communicating requirement between hardware device, is convenient to realize.
In one embodiment of the invention, described in the driven by motor of described wafer platform, the end during turntable rotation of wafer platform is jumped the processing irregularity degree error of the disc surfaces of error and described wafer platform.
In one embodiment of the invention, the control system of described wafer platform is computing machine or programmable logic controller (PLC) or digital signal processor.
In one embodiment of the invention, utilize the first photoelectric detection switch to detect the breach of described wafer; And utilize the second photoelectric detection switch to detect the zero point of described motor.
In one embodiment of the invention, described the first optoelectronic switch and described the second optoelectronic switch are contact photoelectric switch or Hall-type optoelectronic switch.
In one embodiment of the invention, the control system of described wafer platform receives the breach from the wafer of described the first photoelectric detection switch, and the central point that described wafer is set is the polar coordinates initial point of described wafer polar coordinate system, and central point to the breach of described wafer that described wafer is set is the polar coordinates zero point of described wafer polar coordinate system.
In one embodiment of the invention, the control system of described wafer platform receives the zero point from the motor of described the second photoelectric detection switch, and the motor shaft that the motor of described wafer platform is set is the polar coordinates initial point of described motor polar coordinate system, and motor shaft to the zero point of described motor that described motor is set is the polar coordinates zero point of described motor polar coordinate system.
In one embodiment of the invention, the zero point of described motor is the smart zero point of the motor of outside zero point or described wafer platform.
The aspect that the present invention is additional and advantage in the following description part provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Accompanying drawing explanation
The present invention above-mentioned and/or additional aspect and advantage will become from the following description of the accompanying drawings of embodiments obviously and easily and understand, wherein:
Fig. 1 is according to the FB(flow block) of the error compensating method of the measurement of the wafer film thickness degree for wafer platform of the embodiment of the present invention;
Fig. 2 is according to the schematic diagram of the wafer platform of the embodiment of the present invention; And
Fig. 3 is according to the process flow diagram of the error compensating method of the measurement of the wafer film thickness degree for wafer platform of the embodiment of the present invention.
Embodiment
Describe embodiments of the invention below in detail, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has the element of identical or similar functions from start to finish.Below by the embodiment being described with reference to the drawings, be exemplary, only for explaining the present invention, and can not be interpreted as limitation of the present invention.
Disclosing below provides many different embodiment or example to be used for realizing different structure of the present invention.Of the present invention open in order to simplify, hereinafter the parts to specific examples and setting are described.Certainly, they are only example, and object does not lie in restriction the present invention.In addition, the present invention can be in different examples repeat reference numerals and/or letter.This repetition is in order to simplify and object clearly, itself do not indicate the relation between discussed various embodiment and/or setting.In addition, the various specific technique the invention provides and the example of material, but those of ordinary skills can recognize the property of can be applicable to of other techniques and/or the use of other materials.In addition, First Characteristic described below Second Characteristic it " on " structure can comprise that the first and second Characteristics creations are the direct embodiment of contact, also can comprise the embodiment of other Characteristics creation between the first and second features, such the first and second features may not be direct contacts.
In description of the invention, it should be noted that, unless otherwise prescribed and limit, term " installation ", " being connected ", " connection " should be interpreted broadly, for example, can be mechanical connection or electrical connection, also can be the connection of two element internals, can be to be directly connected, and also can indirectly be connected by intermediary, for the ordinary skill in the art, can understand as the case may be the concrete meaning of above-mentioned term.
With reference to description and accompanying drawing below, these and other aspects of embodiments of the invention will be known.In these descriptions and accompanying drawing, specifically disclose some specific implementations in embodiments of the invention, represent some modes of the principle of implementing embodiments of the invention, but should be appreciated that the scope of embodiments of the invention is not limited.On the contrary, embodiments of the invention comprise all changes, modification and the equivalent within the scope of spirit and the intension that falls into additional claims.
The hardware platform of the error compensating method that the wafer film thickness degree for wafer platform that the embodiment of the present invention provides is measured adopts wafer platform.As shown in Figure 1, wafer platform comprises: lift cylinder 30, the first optoelectronic switch 40, the second photoelectric detection switch 50, motor 60, rotating disk 80, sucker 90 and control system 100.Wherein, the first optoelectronic switch 40 is for detection of the breach of wafer, and the second optoelectronic switch 50 is for detection of the zero point of motor.In an example of the present invention, the first optoelectronic switch 40 and the second optoelectronic switch 50 are contact photoelectric switch or Hall-type optoelectronic switch.
In one embodiment of the invention, motor 60 can be for directly driving electric rotating machine.Under the drive of motor 60, rotating disk 80 can be rotated.On rotating disk 80, be provided with sucker 90.Wherein, sucker 90 is for adsorbing loading or unloading wafer.In an example of the present invention, sucker 90 can be vacuum suction and uninstalling system.
In one embodiment of the invention, control system 100 can be PC (personal computer, personal computer), PLC (Programmable Logic Controller, programmable logic controller (PLC)) or DSP (Digital Signal Processor, digital signal processor).
The schematic diagram of the error compensating method of measuring according to the wafer film thickness degree for wafer platform of the embodiment of the present invention is described below with reference to Fig. 2.
As shown in Figure 2, the error compensating method that the wafer film thickness degree for wafer platform that the embodiment of the present invention provides is measured, comprises the steps:
Step S101, measuring system error also deposits systematic error in wafer measuring system.
Measuring system error also deposits systematic error in the system database in wafer measuring system in.Wherein, systematic error is the error when directly driving electric rotating machine 60 and driving rotating disk 80 to rotate, and then this systematic error is deposited in system database.
In one embodiment of the invention, systematic error comprises that end when directly driving electric rotating machine 60 drives rotating disk 80 to rotate jumps the error that the processing irregularity degree on the error that causes and rotating disk 80 surfaces causes.
Step S102, control system 100 is controlled lift cylinder 30 and is risen to receive wafer 10, and start sucker 90 wafer 10 is adsorbed, adsorbing after wafer 10, control system 100 is controlled lift cylinder 30 and is declined.
Step S103, control system 100 is controlled motor 60 and is rotated to detect the breach 20 of wafer 10, and sets up wafer polar coordinate system according to the breach 20 of wafer 10.
Utilize the first photoelectric detection switch 40 to detect the breach 20 of wafer, and testing result Real-time Feedback is arrived to control system 100.
Step S104, is setting up after wafer polar coordinate system, and control system 100 is controlled motor 60 and stopped and being retracted into the breach 20 of wafer, and control sucker 90 unload wafer 10 and control lift cylinder 30 rise.
Step S105, control system 100 is controlled motor 60 and is rotated to detect the zero point of motor, and sets up motor polar coordinate system according to the zero point of motor.
Utilize the second photoelectric detection switch 50 to detect the zero point of motor, and testing result is fed back to control system 100.
In one embodiment of the invention, the zero point of motor 60 is the smart zero point of outside zero point or motor 60.
Step S106, is setting up after motor polar coordinate system, and control system 100 is controlled motor 60 and stopped and being retracted into the zero point 70 of motor, and control sucker 90 adsorb wafer 10 and control lift cylinder 30 decline.
Step S107, utilizes wafer measuring system to measure to obtain initial film thickness value to wafer 10, and according to systematic error, initial film thickness value is compensated, and obtains thickness modified value.
At the surperficial metal-plated membrane of wafer 10, wafer measuring system need to be measured the one-tenth-value thickness 1/10 of this metal film, as initial film thickness value.Then initial film thickness value wafer measuring system being measured deducts the systematic error in system database, thus the thickness modified value after being compensated, the exact value that this thickness modified value is wafer film thickness.
The flow process of the error compensating method of the wafer film thickness degree for wafer platform of the embodiment of the present invention being measured below in conjunction with Fig. 3 conducts further description.
Step S301, measuring system error.
Measuring system error also deposits systematic error in the system database in wafer measuring system in.
Step S302, loads wafer.
Step S303, absorption wafer.
Utilize vacuum suction and uninstalling system 90 to load wafer 10.Adsorbing after wafer 10, control system 100 is controlled lift cylinder 30 and is declined.
Step S304, finds wafer polar coordinate system.
Step S305, carries out separation by wafer with motor.
Setting up after wafer polar coordinate system, control system 100 is controlled motor 60 and is stopped and being retracted into the breach 20 of wafer, and controls vacuum suction and uninstalling system 90 and unload wafer 10 and control lift cylinder 30 and rise.
Step S306, finds motor polar coordinate system.
Utilize the second photoelectric detection switch 50 to detect the zero point of motor, and testing result is fed back to control system 100.Control system 100 is set up motor polar coordinate system according to the zero point of motor.
Step S307, overlaps motor polar coordinate system with wafer polar coordinate system.
The coincidence position of wafer polar coordinate system and motor polar coordinate system is the coincidence position of notched wafer and motor zero.On this position, the surperficial each point surface topography of rotating disk 20 and end are jumped error amount all to store in system database in step S301, can directly call.
Step S308, the initial film thickness value of the metal of measurement crystal column surface.
Step S309, carries out error compensation according to the systematic error in system database to the initial film thickness value of the metal measuring, thereby obtains accurate film thickness value.
Particularly, the initial film thickness value that wafer measuring system is measured deducts the systematic error in system database, thus the thickness modified value after being compensated, as the exact value of wafer film thickness.
The error compensating method of measuring according to the wafer film thickness degree for wafer platform of the embodiment of the present invention, shift to an earlier date measuring system error and deposit system database in, when actual measurement, by wafer is done, adsorb, the motion such as rotation, unloading, lifting, absorption, realize wafer polar coordinate system and overlap with motor polar coordinate system.Then carry out wafer measurement, calling system database carries out error compensation to the measured value obtaining, and finally tries to achieve the accurate metal film on surface one-tenth-value thickness 1/10 of wafer.The present invention by the mechanical motion of hardware can realize to actual measurement to the film thickness of wafer carry out error compensation, thereby the accurate film thickness value after can being compensated is and lower to the communicating requirement between hardware device, is convenient to realize.
Any process of otherwise describing in process flow diagram or at this or method are described and can be understood to, represent to comprise that one or more is for realizing module, fragment or the part of code of executable instruction of step of specific logical function or process, and the scope of the preferred embodiment of the present invention comprises other realization, wherein can be not according to order shown or that discuss, comprise according to related function by the mode of basic while or by contrary order, carry out function, this should be understood by embodiments of the invention person of ordinary skill in the field.
The logic and/or the step that in process flow diagram, represent or otherwise describe at this, for example, can be considered to the sequencing list of the executable instruction for realizing logic function, may be embodied in any computer-readable medium, for instruction execution system, device or equipment (as computer based system, comprise that the system of processor or other can and carry out the system of instruction from instruction execution system, device or equipment instruction fetch), use, or use in conjunction with these instruction execution systems, device or equipment.With regard to this instructions, " computer-readable medium " can be anyly can comprise, device that storage, communication, propagation or transmission procedure are used for instruction execution system, device or equipment or in conjunction with these instruction execution systems, device or equipment.The example more specifically (non-exhaustive list) of computer-readable medium comprises following: the electrical connection section (electronic installation) with one or more wirings, portable computer diskette box (magnetic device), random access memory (RAM), ROM (read-only memory) (ROM), the erasable ROM (read-only memory) (EPROM or flash memory) of editing, fiber device, and portable optic disk ROM (read-only memory) (CDROM).In addition, computer-readable medium can be even paper or other the suitable medium that can print described program thereon, because can be for example by paper or other media be carried out to optical scanning, then edit, decipher or process in electronics mode and obtain described program with other suitable methods if desired, be then stored in computer memory.
Should be appreciated that each several part of the present invention can realize with hardware, software, firmware or their combination.In the above-described embodiment, multiple steps or method can realize with being stored in software or the firmware carried out in storer and by suitable instruction execution system.For example, if realized with hardware, the same in another embodiment, can realize by any one in following technology well known in the art or their combination: there is the discrete logic for data-signal being realized to the logic gates of logic function, there is the special IC of suitable combinational logic gate circuit, programmable gate array (PGA), field programmable gate array (FPGA) etc.
Those skilled in the art are appreciated that realizing all or part of step that above-described embodiment method carries is can carry out the hardware that instruction is relevant by program to complete, described program can be stored in a kind of computer-readable recording medium, this program, when carrying out, comprises step of embodiment of the method one or a combination set of.
In addition, the each functional unit in each embodiment of the present invention can be integrated in a processing module, can be also that the independent physics of unit exists, and also can be integrated in a module two or more unit.Above-mentioned integrated module both can adopt the form of hardware to realize, and also can adopt the form of software function module to realize.If described integrated module realizes and during as production marketing independently or use, also can be stored in a computer read/write memory medium using the form of software function module.
The above-mentioned storage medium of mentioning can be ROM (read-only memory), disk or CD etc.
In the description of this instructions, the description of reference term " embodiment ", " some embodiment ", " example ", " concrete example " or " some examples " etc. means to be contained at least one embodiment of the present invention or example in conjunction with specific features, structure, material or the feature of this embodiment or example description.In this manual, the schematic statement of above-mentioned term is not necessarily referred to identical embodiment or example.And specific features, structure, material or the feature of description can be with suitable mode combination in any one or more embodiment or example.
Although illustrated and described embodiments of the invention, for the ordinary skill in the art, be appreciated that without departing from the principles and spirit of the present invention and can carry out multiple variation, modification, replacement and modification to these embodiment, scope of the present invention is by claims and be equal to and limit.
Claims (6)
1. an error compensating method of measuring for the wafer film thickness degree of wafer platform, is characterized in that, comprises the steps:
Measuring system error also deposits described systematic error in wafer measuring system, wherein, and the error described in the driven by motor that described systematic error is described wafer platform during the turntable rotation of wafer platform;
Described in the control system control of described wafer platform, the lift cylinder of wafer platform rises to receive wafer, and the sucker that starts described wafer platform adsorbs described wafer, adsorbing after described wafer, the lift cylinder of wafer platform declines described in the control system control of described wafer platform;
Described in the control system control of described wafer platform, the motor of wafer platform rotates to detect the breach of described wafer, and sets up wafer polar coordinate system according to the breach of described wafer, specifically comprises:
Described in the set-up of control system of described wafer platform, the central point of wafer is the polar coordinates initial point of described wafer polar coordinate system, and the central point that described wafer is set to the breach of described wafer is the pole axis of described wafer polar coordinate system;
Setting up after described wafer polar coordinate system, the motor of wafer platform stops and being retracted into the breach of described wafer described in described control system control, and the lift cylinder that the sucker of controlling described wafer platform unloads described wafer and controls described wafer platform rises;
Described in the control system control of described wafer platform, the motor of wafer platform rotates to detect the zero point of described motor, and sets up motor polar coordinate system according to the zero point of described motor, specifically comprises:
Described in the set-up of control system of described wafer platform, the motor shaft of the motor of wafer platform is the polar coordinates initial point of described motor polar coordinate system, and the motor shaft that described motor is set to the zero point of described motor is the pole axis of described motor polar coordinate system;
Setting up after described motor polar coordinate system, the motor of wafer platform stops and being retracted into the zero point of described motor described in described control system control, and the lift cylinder that the sucker of controlling described wafer platform adsorbs described wafer and controls described wafer platform declines;
Utilize described wafer measuring system to measure to obtain initial film thickness value to described wafer, and according to described systematic error, described initial film thickness value is compensated, obtain thickness modified value.
2. error compensating method as claimed in claim 1, is characterized in that, described systematic error comprises: the end described in the driven by motor of described wafer platform during the turntable rotation of wafer platform is jumped the processing irregularity degree error of the disc surfaces of error and described wafer platform.
3. error compensating method as claimed in claim 1, is characterized in that, the control system of described wafer platform is computing machine or programmable logic controller (PLC) or digital signal processor.
4. error compensating method as claimed in claim 1, is characterized in that, further comprises:
Utilize the first photoelectric detection switch to detect the breach of described wafer; And
Utilize the second photoelectric detection switch to detect the zero point of described motor.
5. error compensating method as claimed in claim 4, is characterized in that, described the first optoelectronic switch and described the second optoelectronic switch are contact photoelectric switch or Hall-type optoelectronic switch.
6. error compensating method as claimed in claim 1, is characterized in that, the zero point of described motor is the smart zero point of the motor of outside zero point or described wafer platform.
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| CN106248008A (en) * | 2016-08-31 | 2016-12-21 | 惠晶显示科技（苏州）有限公司 | A kind of thinning after liquid crystal panel method for measuring thickness |
| CN106767455A (en) * | 2016-12-15 | 2017-05-31 | 惠科股份有限公司 | Automatic measurement method and equipment for transfer handover platform of driving chip |
| CN115453304B (en) * | 2022-09-06 | 2023-09-22 | 无锡卓海科技股份有限公司 | Super 360-degree rotating platform equipment for wafer detection and operation method thereof |
| CN116255917B (en) * | 2023-02-23 | 2023-08-29 | 泰微科技(珠海)有限公司 | Wafer thickness measuring method and device |
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