CN102564378A - Error compensation method for measuring film thickness of wafer of wafer stage - Google Patents
Error compensation method for measuring film thickness of wafer of wafer stage Download PDFInfo
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- CN102564378A CN102564378A CN2011104523419A CN201110452341A CN102564378A CN 102564378 A CN102564378 A CN 102564378A CN 2011104523419 A CN2011104523419 A CN 2011104523419A CN 201110452341 A CN201110452341 A CN 201110452341A CN 102564378 A CN102564378 A CN 102564378A
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Abstract
The invention provides an error compensation method for measuring film thickness of a wafer of a wafer stage. The error compensation method comprises the following steps of: measuring system errors; controlling a lifting cylinder to lift so as to receive the wafer, and starting a sucker to suck the wafer; controlling the lifting cylinder to lower; controlling a motor to rotate so as to detect the notch of the wafer, and establishing a wafer polar coordinate system according to the notch of the wafer; controlling the motor to stop after establishing the wafer polar coordinate system, returning to the notch of the wafer, controlling the sucker to unload the wafer, and controlling the lifting cylinder to lift; controlling the motor to rotate so as to detect a zero site of the motor, and establishing a motor polar coordinate system according to the zero site of the motor; controlling the motor to stop, returning to the zero site of the motor, controlling the sucker to suck the wafer and controlling the lifting cylinder to lower; and measuring the wafer by means of a wafer measuring system so as to acquire an initial film thickness value, and compensating the initial film thickness value according to the system errors. According to the error compensation method, the errors of the measured film thickness of the wafer can be compensated, and more accurate film thickness of the wafer can be acquired.
Description
Technical field
The present invention relates to the semiconductor manufacturing facility technical field, the error compensating method that particularly a kind of crystal column surface film thickness that is used for the wafer platform is measured.
Background technology
After polishing wafer finishes, need to be grasped the flatness situation of the polishing of crystal column surface.At this moment, need carry out measuring surface form to wafer.Conventional measurement comprises dual mode: probe move and wafer motionless, perhaps pop one's head in motionless and wafer moves.But, when wafer is rotated motion, be accompanied by the influence of end jumping and disc surfaces out-of-flatness equal error usually, thus the accuracy that influence is measured.The film thickness value that measures by the way is rough, and is accurate inadequately.
Summary of the invention
The object of the invention is intended to solve at least one of above-mentioned technological deficiency; The error compensating method that a kind of wafer film thickness degree that is used for the wafer platform of special proposition is measured; This method can realize the film thickness of the wafer that measures is carried out error compensation, thereby can obtain the film thickness value of more accurate wafer.
For achieving the above object; The error compensating method that embodiments of the invention provide a kind of wafer film thickness degree that is used for the wafer platform to measure; Comprise the steps: the measuring system error and deposit said systematic error in wafer measuring system; Wherein, said systematic error is the error in rotating disk when rotation of the said wafer platform of driven by motor of said wafer platform; The lift cylinder that the control system of said wafer platform is controlled said wafer platform rises to receive wafer; And the sucker that starts said wafer platform adsorbs said wafer; After adsorbing said wafer, the lift cylinder that the control system of said wafer platform is controlled said wafer platform descends; The motor rotation that the control system of said wafer platform is controlled said wafer platform to be detecting the breach of said wafer, and sets up the wafer polar coordinate system according to the breach of said wafer; After setting up said wafer polar coordinate system, the motor that said control system is controlled said wafer platform stops and being retracted into the breach of said wafer, and the lift cylinder that the sucker of controlling said wafer platform unloads said wafer and controls said wafer platform rises; The motor rotation that the control system of said wafer platform is controlled said wafer platform to be detecting the zero-bit point of said motor, and sets up the motor polar coordinate system according to the zero-bit point of said motor; After setting up said motor polar coordinate system, the motor that said control system is controlled said wafer platform stops and being retracted into the zero-bit point of said motor, and the lift cylinder that the sucker of controlling said wafer platform adsorbs said wafer and controls said wafer platform descends; Utilize said wafer measuring system that said wafer is measured obtaining the initial film thickness value, and said initial film thickness value is compensated, obtain the thickness modified value according to said systematic error.
The error compensating method of measuring according to the wafer film thickness degree that is used for the wafer platform of the embodiment of the invention; Shift to an earlier date the measuring system error and deposit system database in; When actual measurement,, realize that the wafer polar coordinate system overlaps with the motor polar coordinate system through wafer being done motions such as absorption, rotation, unloading, up-down, absorption.Carry out wafer then and measure, the calling system database carries out error compensation to the measured value that obtains, and tries to achieve wafer accurate surface thickness of metal film value at last.The mechanical motion of the present invention through hardware can realize to actual measurement to the film thickness of wafer carry out error compensation, thereby the accurate film thickness value after can being compensated is and lower to the communicating requirement between the hardware device, is convenient to realize.
End when in one embodiment of the invention, the rotating disk of the said wafer platform of the driven by motor of said wafer platform rotates is jumped the processing irregularity degree error of the disc surfaces of the said wafer platform of sum of errors.
In one embodiment of the invention, the control system of said wafer platform is computing machine or programmable logic controller (PLC) or digital signal processor.
In one embodiment of the invention, utilize first photoelectric detection switch to detect the breach of said wafer; And utilize second photoelectric detection switch to detect the zero-bit point of said motor.
In one embodiment of the invention, said first optoelectronic switch and said second optoelectronic switch are contact optoelectronic switch or Hall-type optoelectronic switch.
In one embodiment of the invention; The control system of said wafer platform receives the breach from the wafer of said first photoelectric detection switch; And the central point that said wafer is set is the polar coordinates initial point of said wafer polar coordinate system, and the breach that central point to the said wafer of said wafer is set is the polar coordinates zero point of said wafer polar coordinate system.
In one embodiment of the invention; The control system of said wafer platform receives the zero-bit point from the motor of said second photoelectric detection switch; And the motor shaft that the motor of said wafer platform is set is the polar coordinates initial point of said motor polar coordinate system, and the zero-bit point that motor shaft to the said motor of said motor is set is the polar coordinates zero point of said motor polar coordinate system.
In one embodiment of the invention, the zero-bit point of said motor is the smart zero-bit point of the motor of outside zero point or said wafer platform.
Aspect that the present invention adds and advantage part in the following description provide, and part will become obviously from the following description, or recognize through practice of the present invention.
Description of drawings
Above-mentioned and/or additional aspect of the present invention and advantage are from obviously with easily understanding becoming the description of embodiment below in conjunction with accompanying drawing, wherein:
Fig. 1 is the FB(flow block) according to the error compensating method of the wafer film thickness degree measurement that is used for the wafer platform of the embodiment of the invention;
Fig. 2 is the synoptic diagram according to the wafer platform of the embodiment of the invention; And
Fig. 3 is the process flow diagram according to the error compensating method of the wafer film thickness degree measurement that is used for the wafer platform of the embodiment of the invention.
Embodiment
Describe embodiments of the invention below in detail, the example of said embodiment is shown in the drawings, and wherein identical from start to finish or similar label is represented identical or similar elements or the element with identical or similar functions.Be exemplary through the embodiment that is described with reference to the drawings below, only be used to explain the present invention, and can not be interpreted as limitation of the present invention.
Disclosing of hereinafter provides many various embodiment or example to be used for realizing different structure of the present invention.Of the present invention open in order to simplify, hereinafter the parts and the setting of specific examples are described.Certainly, they only are example, and purpose does not lie in restriction the present invention.In addition, the present invention can be in different examples repeat reference numerals and/or letter.This repetition is in order to simplify and purpose clearly, itself not indicate the relation between various embodiment that discuss of institute and/or the setting.In addition, various specific technology and the examples of material that the invention provides, but those of ordinary skills can recognize the property of can be applicable to of other technologies and/or the use of other materials.In addition; First characteristic of below describing second characteristic it " on " structure can comprise that first and second characteristics form the embodiment of direct contact; Can comprise that also additional features is formed on the embodiment between first and second characteristics, such first and second characteristics possibly not be direct contacts.
In description of the invention, need to prove, unless otherwise prescribed and limit; Term " installation ", " linking to each other ", " connection " should be done broad understanding, for example, can be mechanical connection or electrical connection; Also can be the connection of two element internals, can be directly to link to each other, and also can link to each other indirectly through intermediary; For those of ordinary skill in the art, can understand the concrete implication of above-mentioned term as the case may be.
With reference to following description and accompanying drawing, with these and other aspects of knowing embodiments of the invention.These describe with accompanying drawing in, some specific implementations in the embodiments of the invention are specifically disclosed, represent some modes of principle of the embodiment of embodiment of the present invention, still should be appreciated that the scope of embodiments of the invention is not limited.On the contrary, embodiments of the invention comprise and fall into appended spirit that adds the right claim and all changes, modification and the equivalent in the intension scope.
The hardware platform of the error compensating method that the wafer film thickness degree that is used for the wafer platform that the embodiment of the invention provides is measured adopts the wafer platform.As shown in Figure 1, the wafer platform comprises: lift cylinder 30, first optoelectronic switch 40, second photoelectric detection switch 50, motor 60, rotating disk 80, sucker 90 and control system 100.Wherein, first optoelectronic switch 40 is used to detect the breach of wafer, and second optoelectronic switch 50 is used to detect the zero-bit point of motor.In an example of the present invention, first optoelectronic switch 40 and second optoelectronic switch 50 are contact optoelectronic switch or Hall-type optoelectronic switch.
In one embodiment of the invention, motor 60 can be for directly driving electric rotating machine.Under the drive of motor 60, rotating disk 80 can be rotated.Rotating disk 80 is provided with sucker 90.Wherein, sucker 90 is used to adsorb the loading or unloading wafer.In an example of the present invention, sucker 90 can be vacuum suction and uninstalling system.
In one embodiment of the invention; Control system 100 can be PC (personal computer; Personal computer), PLC (Programmable Logic Controller, programmable logic controller (PLC)) or DSP (Digital Signal Processor, digital signal processor).
The synoptic diagram of the error compensating method of measuring according to the wafer film thickness degree that is used for the wafer platform of the embodiment of the invention is described with reference to figure 2 below.
Error compensating method as shown in Figure 2, that the wafer film thickness degree that is used for the wafer platform that the embodiment of the invention provides is measured comprises the steps:
Step S101, the measuring system error also deposits systematic error in wafer measuring system.
The measuring system error also deposits systematic error in the system database in the wafer measuring system in.Wherein, the error when systematic error drives rotating disk 80 rotations for directly driving electric rotating machine 60 is deposited into this systematic error in the system database then.
In one embodiment of the invention, systematic error comprises the error that the processing irregularity degreees on sum of errors rotating disk 80 surfaces that the end jumping when directly driving electric rotating machine 60 drives rotating disk 80 rotations causes cause.
Step S102, control system 100 control lift cylinders 30 rise receiving wafer 10, and start 90 pairs of wafers 10 of sucker and adsorb, and after adsorbing wafer 10, control system 100 control lift cylinders 30 descend.
Step S103, control system 100 is controlled the breach 20 of motors 60 rotations with detection wafer 10, and sets up the wafer polar coordinate system according to the breach 20 of wafer 10.
Utilize the breach 20 of first photoelectric detection switch, 40 detection wafers, and testing result is fed back to control system 100 in real time.
The breach 20 that control system 100 receives from the wafer of first photoelectric detection switch 40; And the central point that wafer 10 is set is the polar coordinates initial point of wafer polar coordinate system; And the breach 20 that central point to the wafer of wafer 10 is set is the polar coordinates zero point of wafer polar coordinate system, sets up the wafer polar coordinate system thus.
Step S104, after setting up the wafer polar coordinate system, control system 100 control motors 60 stop and being retracted into the breach 20 of wafer, and control sucker 90 unloading wafers 10 and 30 rises of control lift cylinder.
Step S105, control system 100 is controlled the zero-bit point of motors 60 rotations with the detection motor, and sets up the motor polar coordinate system according to the zero-bit point of motor.
Utilize the zero-bit point of second photoelectric detection switch, 50 detection motors, and testing result is fed back to control system 100.
The zero-bit point that control system 100 receives from the motor of second photoelectric detection switch 50; And the motor shaft that motor 60 is set is the polar coordinates initial point of motor polar coordinate system; And the zero-bit point that motor shaft to the motor 60 of motor 60 is set is polar coordinates zero point of motor polar coordinate system, sets up the motor polar coordinate system thus.
In one embodiment of the invention, the zero-bit point of motor 60 is the smart zero-bit point of outside zero point or motor 60.
Step S106, after setting up the motor polar coordinate system, control system 100 control motors 60 stop and being retracted into the zero-bit point 70 of motor, and control sucker 90 absorption wafers 10 and 30 declines of control lift cylinder.
Step S107 utilizes wafer measuring system that wafer 10 is measured obtaining the initial film thickness value, and according to systematic error the initial film thickness value is compensated, and obtains the thickness modified value.
At the surperficial metal-plated membrane of wafer 10, wafer measuring system need be measured the one-tenth-value thickness 1/10 of this metal film, as the initial film thickness value.The initial film thickness value that then wafer measuring system is measured deducts the systematic error in the system database, thus the thickness modified value after being compensated, and this thickness modified value is the exact value of wafer film thickness.
Below in conjunction with Fig. 3 the flow process of the error compensating method of the wafer film thickness degree measurement that is used for the wafer platform of the embodiment of the invention is further described.
Step S301, the measuring system error.
The measuring system error also deposits systematic error in the system database in the wafer measuring system in.
Step S302 loads wafer.
Control lift cylinder 30 rises to receive wafer 10.
Step S303, the absorption wafer.
Utilize vacuum suction and uninstalling system 90 to load wafer 10.After adsorbing wafer 10, control system 100 control lift cylinders 30 descend.
Step S304 seeks the wafer polar coordinate system.
Control system 100 is controlled the breach 20 of motors 60 rotations with detection wafer 10, and sets up the wafer polar coordinate system according to the breach 20 of wafer 10.Particularly, utilize the breach 20 of first photoelectric detection switch, 40 detection wafers, and testing result is fed back to control system 100 in real time.Control system 100 is set up the wafer polar coordinate system according to the breach of wafer 10.
Step S305 separates wafer with motor.
After setting up the wafer polar coordinate system, control system 100 control motors 60 stop and being retracted into the breach 20 of wafer, and control vacuum suction and uninstalling system 90 unloading wafers 10 and 30 rises of control lift cylinder.
Step S306 seeks the motor polar coordinate system.
Utilize the zero-bit point of second photoelectric detection switch, 50 detection motors, and testing result is fed back to control system 100.Control system 100 is set up the motor polar coordinate system according to the zero-bit point of motor.
Step S307 overlaps the motor polar coordinate system with the wafer polar coordinate system.
The coincidence position of wafer polar coordinate system and motor polar coordinate system is the coincidence position of notched wafer and motor zero.On this position, rotating disk 20 surperficial each point surface topographies and end are jumped error amount all in step S301, to store in the system database, can directly call.
Step S308, the initial film thickness value of the metal of measurement crystal column surface.
Step S309 carries out error compensation according to the systematic error in the system database to the initial film thickness value of the metal that measures, thereby obtains accurate film thickness value.
Particularly, the initial film thickness value that wafer measuring system is measured deducts the systematic error in the system database, thus the thickness modified value after being compensated, as the exact value of wafer film thickness.
The error compensating method of measuring according to the wafer film thickness degree that is used for the wafer platform of the embodiment of the invention; Shift to an earlier date the measuring system error and deposit system database in; When actual measurement,, realize that the wafer polar coordinate system overlaps with the motor polar coordinate system through wafer being done motions such as absorption, rotation, unloading, up-down, absorption.Carry out wafer then and measure, the calling system database carries out error compensation to the measured value that obtains, and tries to achieve wafer accurate surface thickness of metal film value at last.The mechanical motion of the present invention through hardware can realize to actual measurement to the film thickness of wafer carry out error compensation, thereby the accurate film thickness value after can being compensated is and lower to the communicating requirement between the hardware device, is convenient to realize.
Describe and to be understood that in the process flow diagram or in this any process otherwise described or method; Expression comprises module, fragment or the part of code of the executable instruction of the step that one or more is used to realize specific logical function or process; And the scope of preferred implementation of the present invention comprises other realization; Wherein can be not according to order shown or that discuss; Comprise according to related function and to carry out function by the mode of basic while or by opposite order, this should be understood by the embodiments of the invention person of ordinary skill in the field.
In process flow diagram the expression or in this logic of otherwise describing and/or step; For example; Can be considered to be used to realize the sequencing tabulation of the executable instruction of logic function; May be embodied in any computer-readable medium; Use for instruction execution system, device or equipment (like computer-based system, comprise that system or other of processor can be from the systems of instruction execution system, device or equipment instruction fetch and execution command), or combine these instruction execution systems, device or equipment and use.With regard to this instructions, " computer-readable medium " can be anyly can comprise, storage, communication, propagation or transmission procedure are for instruction execution system, device or equipment or combine these instruction execution systems, device or equipment and the device that uses.The example more specifically of computer-readable medium (non-exhaustive list) comprises following: the electrical connection section (electronic installation) with one or more wirings; Portable computer diskette box (magnetic device); Random-access memory (ram), ROM (read-only memory) (ROM) can be wiped and can edit ROM (read-only memory) (EPROM or flash memory); Fiber device, and portable optic disk ROM (read-only memory) (CDROM).In addition; Computer-readable medium even can be paper or other the suitable media that to print said program above that; Because can be for example through paper or other media are carried out optical scanning; Then edit, decipher or handle to obtain said program with other suitable methods in case of necessity with the electronics mode, then it is stored in the computer memory.
Should be appreciated that each several part of the present invention can use hardware, software, firmware or their combination to realize.In the above-described embodiment, a plurality of steps or method can realize with being stored in the storer and by software or firmware that suitable instruction execution system is carried out.For example; If realize with hardware; The same in another embodiment, each in the available following technology well known in the art or their combination realize: have the discrete logic that is used for data-signal is realized the logic gates of logic function, have the special IC of suitable combinational logic gate circuit; Programmable gate array (PGA), field programmable gate array (FPGA) etc.
Those skilled in the art are appreciated that and realize that all or part of step that the foregoing description method is carried is to instruct relevant hardware to accomplish through program; Described program can be stored in a kind of computer-readable recording medium; This program comprises one of step or its combination of method embodiment when carrying out.
In addition, each functional unit in each embodiment of the present invention can be integrated in the processing module, also can be that the independent physics in each unit exists, and also can be integrated in the module two or more unit.Above-mentioned integrated module both can adopt the form of hardware to realize, also can adopt the form of software function module to realize.If said integrated module realizes with the form of software function module and during as independently production marketing or use, also can be stored in the computer read/write memory medium.
The above-mentioned storage medium of mentioning can be a ROM (read-only memory), disk or CD etc.
In the description of this instructions, the description of reference term " embodiment ", " some embodiment ", " example ", " concrete example " or " some examples " etc. means the concrete characteristic, structure, material or the characteristics that combine this embodiment or example to describe and is contained at least one embodiment of the present invention or the example.In this manual, the schematic statement to above-mentioned term not necessarily refers to identical embodiment or example.And concrete characteristic, structure, material or the characteristics of description can combine with suitable manner in any one or more embodiment or example.
Although illustrated and described embodiments of the invention; For those of ordinary skill in the art; Be appreciated that under the situation that does not break away from principle of the present invention and spirit and can carry out multiple variation, modification, replacement and modification that scope of the present invention is accompanying claims and be equal to and limit to these embodiment.
Claims (8)
1. an error compensating method that is used for the wafer film thickness degree measurement of wafer platform is characterized in that, comprises the steps:
The measuring system error also deposits said systematic error in wafer measuring system, wherein, and the error when said systematic error is the rotating disk rotation of the said wafer platform of the driven by motor of said wafer platform;
The lift cylinder that the control system of said wafer platform is controlled said wafer platform rises to receive wafer; And the sucker that starts said wafer platform adsorbs said wafer; After adsorbing said wafer, the lift cylinder that the control system of said wafer platform is controlled said wafer platform descends;
The motor rotation that the control system of said wafer platform is controlled said wafer platform to be detecting the breach of said wafer, and sets up the wafer polar coordinate system according to the breach of said wafer;
After setting up said wafer polar coordinate system, the motor that said control system is controlled said wafer platform stops and being retracted into the breach of said wafer, and the lift cylinder that the sucker of controlling said wafer platform unloads said wafer and controls said wafer platform rises;
The motor rotation that the control system of said wafer platform is controlled said wafer platform to be detecting the zero-bit point of said motor, and sets up the motor polar coordinate system according to the zero-bit point of said motor;
After setting up said motor polar coordinate system, the motor that said control system is controlled said wafer platform stops and being retracted into the zero-bit point of said motor, and the lift cylinder that the sucker of controlling said wafer platform adsorbs said wafer and controls said wafer platform descends;
Utilize said wafer measuring system that said wafer is measured obtaining the initial film thickness value, and said initial film thickness value is compensated, obtain the thickness modified value according to said systematic error.
2. error compensating method as claimed in claim 1 is characterized in that, said systematic error comprises: the end the when rotating disk of the said wafer platform of the driven by motor of said wafer platform rotates is jumped the processing irregularity degree error of the disc surfaces of the said wafer platform of sum of errors.
3. error compensating method as claimed in claim 1 is characterized in that, the control system of said wafer platform is computing machine or programmable logic controller (PLC) or digital signal processor.
4. error compensating method as claimed in claim 1 is characterized in that, further comprises:
Utilize first photoelectric detection switch to detect the breach of said wafer; And
Utilize second photoelectric detection switch to detect the zero-bit point of said motor.
5. error compensating method as claimed in claim 4 is characterized in that, said first optoelectronic switch and said second optoelectronic switch are contact optoelectronic switch or Hall-type optoelectronic switch.
6. error compensating method as claimed in claim 4; It is characterized in that; The control system of said wafer platform receives the breach from the wafer of said first photoelectric detection switch; And the central point that said wafer is set is the polar coordinates initial point of said wafer polar coordinate system, and the breach that central point to the said wafer of said wafer is set is the polar coordinates zero point of said wafer polar coordinate system.
7. error compensating method as claimed in claim 4; It is characterized in that; The control system of said wafer platform receives the zero-bit point from the motor of said second photoelectric detection switch; And the motor shaft that the motor of said wafer platform is set is the polar coordinates initial point of said motor polar coordinate system, and the zero-bit point that motor shaft to the said motor of said motor is set is the polar coordinates zero point of said motor polar coordinate system.
8. error compensating method as claimed in claim 7 is characterized in that, the zero-bit point of said motor is the smart zero-bit point of the motor of outside zero point or said wafer platform.
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| CN115453304A (en) * | 2022-09-06 | 2022-12-09 | 无锡卓海科技股份有限公司 | Over-360-degree rotating platform equipment for wafer detection and operation method thereof |
| CN116255917A (en) * | 2023-02-23 | 2023-06-13 | 泰微科技(珠海)有限公司 | Wafer thickness measuring method and device |
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| WO2018107791A1 (en) * | 2016-12-15 | 2018-06-21 | 惠科股份有限公司 | Automatic measurement method and device for drive chip transferring platform |
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| CN115453304A (en) * | 2022-09-06 | 2022-12-09 | 无锡卓海科技股份有限公司 | Over-360-degree rotating platform equipment for wafer detection and operation method thereof |
| CN115453304B (en) * | 2022-09-06 | 2023-09-22 | 无锡卓海科技股份有限公司 | Super 360-degree rotating platform equipment for wafer detection and operation method thereof |
| CN116255917A (en) * | 2023-02-23 | 2023-06-13 | 泰微科技(珠海)有限公司 | Wafer thickness measuring method and device |
| CN116255917B (en) * | 2023-02-23 | 2023-08-29 | 泰微科技(珠海)有限公司 | Wafer thickness measuring method and device |
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| CN102564378B (en) | 2014-04-23 |
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