CN115267339A - Automatic measuring system and method for film resistance - Google Patents
Automatic measuring system and method for film resistance Download PDFInfo
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- CN115267339A CN115267339A CN202210861180.7A CN202210861180A CN115267339A CN 115267339 A CN115267339 A CN 115267339A CN 202210861180 A CN202210861180 A CN 202210861180A CN 115267339 A CN115267339 A CN 115267339A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/08—Measuring resistance by measuring both voltage and current
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
- G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2832—Specific tests of electronic circuits not provided for elsewhere
- G01R31/2834—Automated test systems [ATE]; using microprocessors or computers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2893—Handling, conveying or loading, e.g. belts, boats, vacuum fingers
Abstract
The embodiment of the invention discloses an automatic measuring system and method of a thin film resistor, wherein a wafer carrying module is used for controlling a mechanical arm to carry a wafer to be measured from a wafer storage position to a specific position of a wafer platform; and the wafer resistance measurement module is used for controlling the probe arm to drive the probe to linearly move along the radius direction from the wafer boundary so as to measure the point-by-point resistance of the wafer. The invention can realize the full-automatic flow from the transportation to the measurement of the wafer, improve the measurement efficiency and save the labor cost.
Description
Technical Field
The application relates to the technical field of integrated circuit testing, in particular to a thin film resistor automatic measuring system, a thin film resistor automatic measuring method, computer equipment and a storage medium.
Background
At present, the integration level of products in a semiconductor process is higher, thousands of active devices are arranged on each integrated circuit chip, hundreds of integrated circuit chips are arranged on each wafer, and the precision requirement of each processing step is higher. Accurate measurements of the resistivity and sheet resistance of the wafer film are necessary to control the performance quality of the finished product and save production costs.
At present, the square resistor is measured by a four-probe method at home and abroad, and the method has the characteristics of high measurement precision, high sensitivity and good stability. Most of four-probe resistance meters on the market are manual control meters, full automation is not realized, the circuit connection mode and the probe position need to be manually changed during measurement, the measurement speed is low, and the position accuracy of manual placement is low. When the automatic resistance measuring instrument is used for measuring, the testing probe is kept static, and the wafer platform rotates to the required angle and direction according to instructions, so that the diameter scanning and the outline scanning of the wafer are realized. Such instruments basically allow for wafer inspection, but have many disadvantages in terms of wafer handling techniques. The wafer to be detected is manually placed on the detection platform, and the position needs to be manually aligned, so that deviation can be caused to influence the measurement result; or a separate wafer handling system placed on the inspection platform, which must be placed directly in front of the housing of the metrology instrument or elsewhere near the platform, with too many components that tend to interfere with each other during inspection.
Aiming at the problems that the four-probe resistance meter in the related technology is mostly manually controlled, full-automatic measurement cannot be realized, the measurement speed is low, and the measurement precision is high, an effective solution is not provided at present.
Disclosure of Invention
The embodiment of the invention provides a method, a system, computer equipment and a storage medium for automatically measuring a film resistor, which are used for solving the problems that a four-probe resistance meter in the related technology is mostly manually controlled, the full-automatic measurement cannot be realized, the measurement speed is low and the measurement precision is high.
In order to achieve the above object, in a first aspect of embodiments of the present invention, there is provided an automatic measuring system for a sheet resistance, including:
the wafer carrying module is used for controlling the mechanical arm and carrying the wafer to be measured to a specific position of the wafer platform from the wafer storage position;
and the wafer resistance measurement module is used for controlling the probe arm to drive the probe to linearly move along the radius direction from the wafer boundary so as to measure the resistance of the wafer point by point.
Optionally, in a possible implementation manner of the first aspect, the wafer handling module includes: the vacuum robot comprises a mechanical arm, a vacuum source, a driver and a motion motor, wherein the motion motor comprises a horizontal motor, a vertical motor and a rotating motor, and the mechanical arm is enabled to vertically translate and rotate through the driver and the three motion motors; and one end of the mechanical arm is provided with a wafer adsorption head, the other end of the mechanical arm is connected with a motion motor, the wafer adsorption head is connected with a vacuum source through the mechanical arm, and the wafer is loaded and unloaded by using the wafer adsorption head.
Optionally, in one possible implementation manner of the first aspect, the wafer resistance measurement module includes a wafer rotation platform and a probe arm unit; wherein the wafer rotating platform comprises a rotating platform and a vacuum component; a rotary joint is arranged in the vacuum component, and double bearings are arranged in the rotary joint and used for realizing continuous rotation and ensuring that a rear air path does not follow up; the vacuum component is directly connected with the rotary platform and is used for adsorbing the wafer on the rotary platform; the probe arm unit comprises a probe arm, a probe head, a cam mechanism and a servo motor, and is used for driving the probe arm to lift by rotating the cam mechanism through the servo motor.
In a second aspect of the embodiments of the present invention, there is provided a method for automatically measuring a sheet resistance, including:
controlling the mechanical arm to convey the wafer to be measured from the wafer storage position to a specific position of the wafer rotating platform;
and controlling the probe arm to drive the probe to linearly move along the radius direction from the boundary of the wafer to be measured, and measuring the resistance of each point on the wafer.
Optionally, in a possible implementation manner of the second aspect, the method further includes:
when measuring the resistance of any point on the wafer;
inputting a first current value into the first probe and the third probe, measuring a first voltage value of the second probe and the fourth probe, and calculating a first resistance value according to the first current value and the first voltage value;
inputting a second current value into the first probe and the fourth probe, measuring a second voltage value of the second probe and the third probe, and calculating a second resistance value according to the second current value and the second voltage value;
and calculating the resistance value of the target point position based on the first resistance value and the second resistance value.
Optionally, in a possible implementation manner of the second aspect, the controlling the probe arm to drive the probe to linearly move along a radius direction from a boundary of the wafer to be measured, and performing resistance measurement on each point on the wafer includes:
step 1: when the probe head is placed at a first point location, the rotating platform is controlled to rotate 360 degrees, so that the probe head measures the resistance values of all the point locations within the range of the first point location, wherein the first point location refers to any point on the boundary of the wafer;
and 2, step: when the resistance values of all point locations in the first point location range are measured, controlling the probe arm to drive the probe head to linearly move a unit distance from the first point location along the radius direction so as to enable the probe head to be arranged at a second point location, repeating the step 1, and measuring the resistance values of all point locations in the second point location range;
and 3, step 3: and (5) repeating the steps (1) and (2) until the moving distance of the probe head is equal to the radius of the wafer, and finishing the measurement.
In a third aspect of the embodiments of the present invention, a full-automatic handling and measuring method for a sheet resistor is provided, including:
setting parameters, wherein the parameters comprise wafer size, notch type and measurement parameters;
judging whether to load the wafer to the wafer platform, if so, using a control mechanical arm to transport the wafer to be measured from the wafer storage position to a specific position of the wafer platform; if not, waiting for the preset time and judging whether to load the wafer on the wafer platform again;
after a wafer to be measured is loaded to a specific position of a wafer platform, controlling a probe arm to drive a probe to linearly move along the radius direction from the boundary of the wafer, and measuring the resistance of each point position on the wafer;
storing the resistance values of all point positions on the wafer to be measured, and calculating a final measurement result according to the resistance values;
and after resistance measurement is carried out on all point positions on the wafer, the mechanical arm is controlled to unload the wafer to be measured on the wafer platform.
In a fourth aspect of the embodiments of the present invention, a computer device is provided, which includes a memory and a processor, where the memory stores a computer program that can be run on the processor, and the processor executes the computer program to implement the steps in the above-mentioned method embodiments.
A fifth aspect of the embodiments of the present invention provides a readable storage medium, in which a computer program is stored, which, when being executed by a processor, is adapted to carry out the steps of the method according to the first aspect of the present invention and any possible design of the first aspect of the present invention.
According to the automatic measuring method, system, computer equipment and storage medium for the thin film resistor, the wafer carrying module is used for controlling the mechanical arm to carry the wafer to be measured from the wafer storage position to the specific position of the wafer platform; and the wafer resistance measurement module is used for controlling the probe arm to drive the probe to linearly move along the radius direction from the wafer boundary so as to measure the resistance of the wafer point by point. The invention can realize the full-automatic flow from the transportation to the measurement of the wafer, improve the measurement efficiency and save the labor cost.
Drawings
Fig. 1 is a structural diagram of an automatic measuring system for sheet resistance according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of an automatic measurement system architecture;
FIG. 3 is a block diagram of a probe arm unit;
FIG. 4 is a block diagram of the probe head;
FIG. 5 is a flow chart of an automatic thin film resistance measurement method according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of the implementation of the method for measuring the resistance of all the points on the wafer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
The terms "first," "second," "third," "fourth," and the like in the description and in the claims, as well as in the drawings, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in sequences other than those illustrated or described herein.
It should be understood that, in the various embodiments of the present invention, the sequence numbers of the processes do not mean the execution sequence, and the execution sequence of the processes should be determined by the functions and the internal logic, and should not constitute any limitation to the implementation process of the embodiments of the present invention.
It should be understood that in the present application, "comprising" and "having" and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
It should be understood that, in the present invention, "a plurality" means two or more. "and/or" is merely an association describing an associated object, meaning that three relationships may exist, for example, and/or B, may mean: a exists alone, A and B exist simultaneously, and B exists alone. The character "/" generally indicates that the former and latter associated objects are in an "or" relationship. "comprising a, B and C", "comprising a, B, C" means that all three of a, B, C are comprised, "comprising a, B or C" means comprising one of a, B, C, "comprising a, B and/or C" means comprising any 1 or any 2 or 3 of a, B, C.
It should be understood that in the present invention, "B corresponding to a", "a corresponds to B", or "B corresponds to a" means that B is associated with a, and B can be determined from a. Determining B from a does not mean determining B from a alone, but may also be determined from a and/or other information. And the matching of A and B means that the similarity of A and B is greater than or equal to a preset threshold value.
As used herein, the term "if" may be interpreted as "at \8230; …" or "in response to a determination" or "in response to a detection" depending on the context.
The technical means of the present invention will be described in detail with reference to specific examples. These several specific embodiments may be combined with each other below, and details of the same or similar concepts or processes may not be repeated in some embodiments.
Example 1:
the present application provides an automatic measuring system for thin film resistance, which is shown in fig. 1 as a structural diagram, and comprises:
the wafer carrying module is used for controlling the mechanical arm and carrying the wafer to be measured to a specific position of the wafer platform from the wafer storage position;
and the wafer resistance measurement module is used for controlling the probe arm to drive the probe to linearly move along the radius direction from the wafer boundary so as to measure the point-by-point resistance of the wafer.
In this embodiment, the automatic measurement system is mainly divided into: the device comprises a human-computer interaction module, a wafer automatic carrying module and a wafer resistance automatic measuring module, wherein the human-computer interaction module is communicated with the wafer carrying module and the wafer resistance automatic measuring module through serial ports. Specifically, as shown in fig. 2, after an operator inputs measurement parameters and submits a measurement request through the human-computer interaction module, the automatic wafer resistance measurement system can directly realize loading, measurement and unloading of the wafer to be measured (wherein the automatic wafer handling module is responsible for loading and unloading, and the automatic wafer resistance measurement module is responsible for measuring the resistance of each point on the wafer), and finally the human-computer interaction module is responsible for storing measurement data and calculating a final measurement result. The automatic measuring system for the wafer resistance is simple and convenient to operate and high in measuring precision, all moving or measuring parts are reasonably arranged through compact design, the size of a machine table is greatly reduced, the space utilization rate is improved, and the requirements of more customers can be met.
In one embodiment, a wafer handling module comprises: the vacuum robot comprises a mechanical arm, a vacuum source, a driver and a motion motor, wherein the motion motor comprises a horizontal motor, a vertical motor and a rotating motor, and the mechanical arm is enabled to vertically translate and rotate through the driver and the three motion motors; and one end of the mechanical arm is provided with a wafer adsorption head, the other end of the mechanical arm is connected with a motion motor, the wafer adsorption head is connected with a vacuum source through the mechanical arm, and the wafer is loaded and unloaded by using the wafer adsorption head.
In this embodiment, the wafer handling system implements wafer handling, loading, and unloading functions. Comprises a hollow mechanical arm, a vacuum source, a driver, a horizontal motor, a vertical motor and a rotating motor. The vertical translation and rotation of the mechanical arm are realized through a driver and three motion motors. The other end of the mechanical arm is provided with a wafer adsorption head, the adsorption head is connected with a vacuum source through the mechanical arm, and when the wafer is close to the adsorption head, the wafer is firmly adsorbed on the mechanical arm due to air pressure difference during working. The wafer to be detected can be placed on the detection platform by moving the mechanical arm, and the wafer is unloaded from the detection platform through the mechanical arm after detection is finished and is placed back to the specified position.
In one embodiment, the wafer resistance measurement module comprises a wafer rotation platform and a probe arm unit; the wafer rotating platform comprises a rotating platform and a vacuum component; a rotary joint is arranged in the vacuum component, and double bearings are arranged in the rotary joint and used for realizing continuous rotation and simultaneously ensuring that a rear air path does not follow up; the vacuum component is directly connected with the rotary platform and is used for adsorbing the wafer on the rotary platform; the probe arm unit comprises a probe arm, a probe head, a cam mechanism and a servo motor, and is used for driving the probe arm to lift by rotating the cam mechanism through the servo motor.
In the above embodiments, the wafer resistance measuring module mainly includes a wafer rotating platform, a probe arm unit, a current unit, a voltage unit, and a relay. Wherein the wafer rotary platform is composed of a hollow rotary platform and a vacuum component. The platform is driven by a servo motor, and can realize continuous rotation and positive and negative rotation. A rotary joint is arranged in the vacuum component, and the rotary joint internally comprises double bearings, so that the rear air passage can be ensured not to follow up while continuous rotation is realized. The vacuum component is directly connected with the surface of the platform, so that the wafer is stably absorbed on the platform, and the measuring result cannot be influenced by rotation and shaking.
Specifically, the probe arm unit is shown in fig. 3, and mainly includes a probe arm, probes (the selected probes are 4 probe heads arranged in a straight line at equal intervals, as shown in fig. 4, the four probes are connected with the current unit and the voltage unit, and pass through the relay control circuit), a cam mechanism, and a servo motor. Wherein, be equipped with the lead screw straight line module of stroke 200mm in the probe arm, by servo motor drive, can satisfy the probe along 12 cun wafer radius (150 mm) direction rectilinear movement. The measuring probe head is installed at the terminal of probe arm, need measure twice when measuring the resistance of every position point on the wafer, the probe contact is twice and because the probe needs contact wafer surface measurement, the measurement end need lift up and prevent wafer scratch when rotating, so the probe need be equipped with and lift up the function of putting down, consequently this application selects to install cam mechanism in probe arm below, rotates the lift that the cam comes probe arm and probe through the motor, amplitude of rise 10mm.
Example 2:
the present application provides a method for automatically measuring a sheet resistance, which comprises the following steps:
step S110, controlling the mechanical arm to convey the wafer to be measured from the wafer storage position to a specific position of the wafer rotating platform;
in step S110, the measurement parameters are mainly set in a human-computer interaction manner, and after the parameters are set, it is determined whether to load a wafer onto the wafer platform (the determination criterion is whether an unmeasured wafer exists at a specific position of the wafer platform); if yes, the wafer to be measured is transported to a specific position of the wafer platform from the wafer storage position by using the control mechanical arm; if not, waiting for the preset time, and judging whether to load the wafer to the wafer platform again.
And step S120, controlling the probe arm to drive the probe to linearly move along the radius direction from the boundary of the wafer to be measured, and measuring the resistance of each point on the wafer.
In one embodiment, the method further includes the following steps in the process of measuring the resistance of each point on the wafer:
when measuring the resistance of any point on the wafer;
inputting a first current value in the first probe and the third probe, measuring a first voltage value of the second probe and the fourth probe, and calculating a first resistance value according to the first current value and the first voltage value;
inputting a second current value into the first probe and the fourth probe, measuring a second voltage value of the second probe and the third probe, and calculating a second resistance value according to the second current value and the second voltage value;
and calculating the resistance value of the target point position based on the first resistance value and the second resistance value.
In this embodiment, when measuring the resistance of a point on the wafer, the current unit and the voltage unit are read to determine the proper current magnitude and voltage range for measurement, and then the resistance is measured. The probe that this application was selected is the probe head of 4 equidistant linear arrangements, and four probes link to each other with current cell and voltage unit, through relay control circuit. Constant current I is input to the ends of the probe 1 and the probe 313Measuring probe 2 and probe 4 terminal voltage V24The ratio of the voltage between the probes 24 to the current between the probes 13, R3＝V24/I13(ii) a Then constant current I is input to the probe 1 and the probe 4 end14Probe 2 probe 3 terminal voltage V23The ratio of the voltage between the probes 23 to the current between the probes 14, R2＝V23/I14。
The square resistance R of the measuring pointSCan be calculated by the equation:
in one embodiment, the controlling the probe arm to drive the probe to move linearly along a radial direction from a boundary of the wafer to be measured, and performing resistance measurement on each point on the wafer includes:
step 1: when the probe head is placed at a first point location, the rotating platform is controlled to rotate 360 degrees, so that the probe head measures the resistance values of all the point locations within the range of the first point location, wherein the first point location refers to any point on the boundary of the wafer;
step 2: when the resistance values of all point locations within the first point location range are measured, controlling the probe arm to drive the probe head to linearly move by a unit distance along the radius direction from the first point location, so that the probe head is placed at a second point location, repeating the step 1, and measuring the resistance values of all point locations within the second point location range;
and 3, step 3: and (3) repeating the steps (1) and (2) until the moving distance of the probe head is equal to the radius of the wafer, and finishing the measurement.
In this embodiment, referring to fig. 6, a specific step of performing resistance measurement on all point locations on a wafer may be to arbitrarily select one point location as a first point location on a wafer boundary for resistance measurement, and when the resistance value of the point location is measured, take the point location as a starting point, take a radius of the wafer as a movement radius, perform circular movement to the left or the right, and measure the resistance values of all point locations within the circular range, as shown by "1" in fig. 6; when the resistance values of all the point locations in the circumference range are measured, controlling the probe arm to drive the probe head to linearly move from the first point location along the radius direction by a unit distance to reach a second point location, as shown by '2' in fig. 6; then, taking the second point location as a starting point, taking the radius of the wafer as a movement radius, performing circular movement leftwards or rightwards, measuring the resistance values of all the point locations in the circular range, as shown in "3" in fig. 6, and finally repeating the above method until the probe head reaches the center of the wafer.
Example 3:
the application also provides a full-automatic carrying and measuring method of the film resistor, which comprises the following steps:
setting parameters, wherein the parameters comprise wafer size, notch type and measurement parameters (including unit step length and unit angle);
judging whether to load the wafer on the wafer platform, if so, using the control mechanical arm to transport the wafer to be measured from the wafer storage position to a specific position of the wafer platform; if not, waiting for the preset time and judging whether to load the wafer to the wafer platform again;
after a wafer to be measured is loaded to a specific position of a wafer platform, controlling a probe arm to drive a probe to linearly move along the radius direction from the boundary of the wafer, and measuring the resistance of each point position on the wafer;
storing the resistance values of all point positions on the wafer to be measured, and calculating a final measurement result according to the resistance values;
and after resistance measurement is carried out on all point positions on the wafer, the mechanical arm is controlled to unload the wafer to be measured on the wafer platform.
The invention provides an automatic measuring system and method of a film resistor, wherein a wafer carrying module is used for controlling a mechanical arm to carry a wafer to be measured from a wafer storage position to a specific position of a wafer platform; and the wafer resistance measurement module is used for controlling the probe arm to drive the probe to linearly move along the radius direction from the wafer boundary so as to measure the resistance of the wafer point by point. The invention can realize the full-automatic flow from the transportation to the measurement of the wafer, improve the measurement efficiency and save the labor cost.
The technical effects are as follows:
(1) The wafer conveying and detecting device comprises wafer conveying and wafer detecting, and solves the problem that wafers are manually conveyed and assembled and disassembled during wafer detecting. The detection speed is greatly improved, the measurement time is shortened, and the labor cost is saved.
(2) The device size has been considered during the design of this application, and when designing, under the prerequisite that does not influence measurement quality and speed, the priority considers compact design, so reduced the volume greatly, improved space utilization, can satisfy more users' demand, especially the limited user in space.
(3) The resistance measurement of the single point of the wafer in the application is a double-electric-measurement combined four-probe resistance measurement method. The method is different from the traditional four-probe measurement method and has the function of automatically correcting the boundary effect, correction is not needed when the wafer with the determined size is measured, the probe head is not needed to be moved, and the resistance uniformity of the tested part can be calculated through measurement in different modes. The method has the advantages that the transverse migration of the needle tip is not influenced during measurement, the measurement precision is higher, and the measurement speed is higher.
The readable storage medium may be a computer storage medium or a communication medium. Communication media includes any medium that facilitates transfer of a computer program from one place to another. Computer storage media may be any available media that can be accessed by a general purpose or special purpose computer. For example, a readable storage medium is coupled to the processor such that the processor can read information from, and write information to, the readable storage medium. Of course, the readable storage medium may also be an integral part of the processor. The processor and the readable storage medium may reside in an Application Specific Integrated Circuits (ASIC). Additionally, the ASIC may reside in user equipment. Of course, the processor and the readable storage medium may also reside as discrete components in a communication device. The readable storage medium may be a read-only memory (ROM), a random-access memory (RAM), a CD-ROM, a magnetic tape, a floppy disk, an optical data storage device, and the like.
The present invention also provides a program product comprising executable instructions stored on a readable storage medium. The at least one processor of the device may read the execution instructions from the readable storage medium, and the execution of the execution instructions by the at least one processor causes the device to implement the methods provided by the various embodiments described above.
In the above embodiments of the terminal or the server, it should be understood that the Processor may be a Central Processing Unit (CPU), other general-purpose processors, a Digital Signal Processor (DSP), etc. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like. The steps of a method disclosed in connection with the present invention may be embodied directly in a hardware processor, or in a combination of hardware and software modules.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (9)
1. An automatic thin film resistance measuring system, comprising:
the wafer carrying module is used for controlling the mechanical arm and carrying the wafer to be measured to a specific position of the wafer platform from the wafer storage position;
and the wafer resistance measurement module is used for controlling the probe arm to drive the probe to linearly move along the radius direction from the wafer boundary so as to measure the resistance of the wafer point by point.
2. The automatic thin film resistance measuring system according to claim 1,
the wafer handling module includes: the vacuum robot comprises a mechanical arm, a vacuum source, a driver and a motion motor, wherein the motion motor comprises a horizontal motor, a vertical motor and a rotating motor, and the mechanical arm is enabled to vertically translate and rotate through the driver and the three motion motors; and one end of the mechanical arm is provided with a wafer adsorption head, the other end of the mechanical arm is connected with a motion motor, the wafer adsorption head is connected with a vacuum source through the mechanical arm, and the wafer is loaded and unloaded by using the wafer adsorption head.
3. The automatic thin film resistance measuring system according to claim 1,
the wafer resistance measuring module comprises a wafer rotating platform and a probe arm unit;
wherein the wafer rotating platform comprises a rotating platform and a vacuum component; a rotary joint is arranged in the vacuum component, and double bearings are arranged in the rotary joint and used for realizing continuous rotation and simultaneously ensuring that a rear air path does not follow up; the vacuum component is directly connected with the rotary platform and used for adsorbing the wafer on the rotary platform; the probe arm unit comprises a probe arm, a probe head, a cam mechanism and a servo motor, and is used for driving the probe arm to lift by rotating the cam mechanism through the servo motor.
4. A method for automatically measuring a thin film resistance is characterized by comprising the following steps:
controlling the mechanical arm to convey the wafer to be measured from the wafer storage position to a specific position of the wafer rotating platform;
and controlling the probe arm to drive the probe to linearly move along the radius direction from the boundary of the wafer to be measured, and measuring the resistance of each point on the wafer.
5. The method of claim 4, further comprising:
when measuring the resistance of any point on the wafer;
inputting a first current value into the first probe and the third probe, measuring a first voltage value of the second probe and the fourth probe, and calculating a first resistance value according to the first current value and the first voltage value;
inputting a second current value into the first probe and the fourth probe, measuring a second voltage value of the second probe and the third probe, and calculating a second resistance value according to the second current value and the second voltage value;
and calculating the resistance value of the target point position based on the first resistance value and the second resistance value.
6. The method as claimed in claim 4, wherein the controlling the probe arm drives the probe to move linearly along a radial direction from the edge of the wafer to be measured, so as to measure the resistance of each point on the wafer, the method comprises:
step 1: when the probe head is placed at a first point position, the rotating platform is controlled to rotate 360 degrees, so that the probe head can measure the resistance values of all the point positions in a first point position range, wherein the first point position refers to any point on the boundary of the wafer;
step 2: when the resistance values of all point locations in the first point location range are measured, controlling the probe arm to drive the probe head to linearly move a unit distance from the first point location along the radius direction so as to enable the probe head to be arranged at a second point location, repeating the step 1, and measuring the resistance values of all point locations in the second point location range;
and 3, step 3: and (5) repeating the steps (1) and (2) until the moving distance of the probe head is equal to the radius of the wafer, and finishing the measurement.
7. A full-automatic conveying and measuring method for a thin film resistor is characterized by comprising the following steps:
setting parameters, wherein the parameters comprise wafer size, notch type and measurement parameters;
judging whether to load the wafer on the wafer platform, if so, using the control mechanical arm to transport the wafer to be measured from the wafer storage position to a specific position of the wafer platform; if not, waiting for the preset time and judging whether to load the wafer on the wafer platform again;
after a wafer to be measured is loaded to a specific position of a wafer platform, controlling a probe arm to drive a probe to linearly move along the radius direction from the boundary of the wafer, and measuring the resistance of each point position on the wafer;
storing the resistance values of all point positions on the wafer to be measured, and calculating a final measurement result according to the resistance values;
and after resistance measurement is carried out on all point positions on the wafer, the mechanical arm is controlled to unload the wafer to be measured on the wafer platform.
8. A computer device comprising a memory and a processor, the memory storing a computer program operable on the processor, wherein the processor implements the steps of the method of any one of claims 4 to 6 when executing the computer program.
9. A computer-readable storage medium, on which a computer program is stored, which, when being executed by a processor, carries out the steps of the method of any one of claims 4 to 6.
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