CN102560375B - Thin film deposition equipment - Google Patents

Thin film deposition equipment Download PDF

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Publication number
CN102560375B
CN102560375B CN201210042641.4A CN201210042641A CN102560375B CN 102560375 B CN102560375 B CN 102560375B CN 201210042641 A CN201210042641 A CN 201210042641A CN 102560375 B CN102560375 B CN 102560375B
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China
Prior art keywords
chamber
substrate
film deposition
thin film
preheating cavity
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CN201210042641.4A
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CN102560375A (en
Inventor
刁宏伟
彭铮
李媛媛
王巍
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China wisdom (Taixing) Power Technology Co., Ltd.
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SHANGHAI CIIC OPTICAL FIBER COMMUNICATION CO Ltd
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Abstract

The invention relates to thin film deposition equipment which comprises a substrate preprocessing part and a thin film deposition part, wherein a substrate hanging rack with substrates is transferred among a substrate loading chamber, a surface processing chamber and a drying chamber in the substrate preprocessing part by a transfer device; a high vacuum gate valve is arranged between a preheating chamber and a transfer chamber in the thin film deposition part; the drying chamber is communicated with the preheating chamber; a high vacuum gate valve is arranged between the drying chamber and the preheating chamber; the preheating chamber is internally provided with a substrate hanging rack; the drying chamber is internally provided with a manipulator for hanging the substrates to the substrate hanging rack in the preheating chamber; the transfer chamber is internally provided with a three-dimensional rotary manipulator for sending the substrates into a thin film deposition chamber; and the preheating chamber is further connected with a nitrogen charging device and an evacuating device. The equipment can avoid performance degradation arising from external contamination, and improves the stability and repeatability of the process.

Description

A kind of film deposition equipment
Technical field
The present invention relates to vacuum coating film equipment field, particularly relate to a kind of film deposition equipment.
Background technology
The wide model of use of vacuum coating film equipment is distributed in all trades and professions, and required film plating substrate is of a great variety.In sun power industry, the use of vacuum coating technology spreads all over links, and the substrate of use comprises glass, metal, plastics and silicon chip etc.; The thin-film material that plates is also varied, as antireflective film, conducting film, insulating film, silica-base film etc.; The device category of using is different, and as tubular type, board-like, cluster formula etc., method has plasma body, molecular beam, magnetron sputtering, thermal evaporation etc.Therefore in order to make, thin film deposition processes is more stable needs a kind of stable film deposition equipment badly.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of film deposition equipment, can avoid, because the degradation that reason causes is stain in outside, having improved stability and the repeatability of technique.
The technical solution adopted for the present invention to solve the technical problems is: a kind of film deposition equipment is provided, comprise substrate preprocessing part and thin film deposition part, described substrate preprocessing part comprises that the substrate that is communicated with successively and is separated by pneumatic door packs chamber, surface treatment chamber into and dries chamber; Described substrate packs chamber, surface treatment chamber into and dries between chamber and transmitted the substrate hanger of substrate is housed by transfer device; Described thin film deposition partly comprises preheating cavity, transmission chamber and the thin film deposition chamber being communicated with successively, between described preheating cavity and transmission chamber, is provided with high vacuum push-pull valve; Described oven dry chamber is connected with preheating cavity, between described oven dry chamber and preheating cavity, is provided with high vacuum push-pull valve; In described preheating cavity, be provided with substrate hanger, indoor being provided with of described drying cavity is suspended to the mechanical manipulator on the substrate hanger in preheating cavity by substrate; In described transmission chamber, be provided with for the substrate in preheating cavity being sent into the three-dimensional rotation mechanical manipulator in thin film deposition chamber; Described preheating cavity is also connected with vacuum extractor with nitrogen charging device respectively.
Described thin film deposition part also comprise with transmit that chamber is communicated with get sheet chamber.
Described surface treatment chamber comprises a dilute acid bath and a treatment trough.
Described drying cavity is indoor is provided with hot high pure nitrogen air knife; Between described hot high pure nitrogen air knife and mechanical manipulator, be provided with partition door.
Described thin film deposition is equipped with substrate heating device in chamber, and on described substrate heating device, band is useful on the slot of fixed substrate.
Described thin film deposition chamber using plasma method, magnetron sputtering method or inductance method deposit film.
Described thin film deposition chamber adopts stainless material or aluminum to make.
Described substrate hanger top is provided with T-shaped web member; Described T-shaped web member is connected with described transfer device.
Beneficial effect
Owing to having adopted above-mentioned technical scheme, the present invention compared with prior art, there is following advantage and positively effect: the present invention can realize the successive sedimentation of thin-film material, can in the different chamber of same equipment, be coated with continuously dissimilar thin-film material, can plated film not carried out in vacuum breaker situation in substrate two sides, a whole set of battery process completes in airtight or vacuum environment, avoids, because the degradation that reason causes is stain in outside, having improved stability and the repeatability of technique.
Accompanying drawing explanation
Fig. 1 is substrate preprocessing part schematic top plan view in the present invention;
Fig. 2 is film successive sedimentation part schematic top plan view in the present invention;
Fig. 3 is substrate hanger schematic side view in the present invention.
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment are only not used in and limit the scope of the invention for the present invention is described.In addition should be understood that those skilled in the art can make various changes or modifications the present invention after having read the content of the present invention's instruction, these equivalent form of values fall within the application's appended claims limited range equally.
Embodiments of the present invention relate to a kind of film deposition equipment, comprise substrate preprocessing part and thin film deposition part.Substrate preprocessing part is comprised of three chambers: substrate packs chamber 1, surface treatment chamber 2 into, dries between 3, three chambers of chamber and transmitted the substrate hanger of substrate is housed by transfer device, between chamber and chamber, by pneumatic door, is separated; Thin film deposition is partly mainly used in thin film deposition, preheating cavity 6, transmission chamber 7, thin film deposition chamber 8 etc., consists of.
As shown in Figure 1, described substrate preprocessing part comprises that the substrate that is communicated with successively and is separated by pneumatic door packs chamber 1, surface treatment chamber 2 into and dries chamber 3; Described substrate packs chamber 1, surface treatment chamber 2 and 3 of chambers of oven dry into and is transmitted the substrate hanger 10 of substrate is housed by transfer device.Wherein, surface treatment chamber 2 and oven dry chamber 3 are also provided with access hole 4, so that easy to maintenance.
Substrate packs chamber 1 into for packing substrate into and being isolated from the outside, substrate is positioned on substrate hanger 10, on substrate hanger 10, can place multi-disc substrate, and substrate quantity is determined according to equipment situation, substrate material can be glass, silicon chip, plastics or sheet metal, and sizes of substrate is determined with actual demand; Substrate hanger 10 is shown in Fig. 3 by the T-shaped web member 11(on its top) be connected with transport unit, and by transport unit, substrate hanger 10 is sent to next process procedure.Surface treatment chamber 2, for substrate surface pre-treatment, comprises a dilute acid bath, a warm water tank or other treatment trough because of process requirements.Dry chamber 3 and dry for substrate surface, adopt hot blast cutter mode, this chamber is also furnished with a mechanical manipulator for the substrate handover between preheating cavity.
As shown in Figure 2, described thin film deposition partly comprises preheating cavity 6, transmission chamber 7 and the thin film deposition chamber 8 being communicated with successively.Between described preheating cavity 6 and transmission chamber 7, be provided with high vacuum push-pull valve; Described oven dry chamber 3 is connected by interface 5 with preheating cavity 6, between described oven dry chamber 3 and preheating cavity 6, is provided with high vacuum push-pull valve; In described preheating cavity 6, be provided with substrate hanger 10, in described oven dry chamber 3, be provided with substrate is suspended to the mechanical manipulator on the substrate hanger 10 in preheating cavity 6; In described transmission chamber 7, be provided with for the substrate in preheating cavity 6 being sent into the three-dimensional rotation mechanical manipulator in thin film deposition chamber 8; Described preheating cavity 6 is also connected with vacuum extractor with nitrogen charging device respectively.Described thin film deposition part also comprise with transmit that chamber 7 is communicated with get sheet chamber 9.
Preheating cavity 6 is for preheating to substrate, and main purpose is to remove the steam of substrate surface absorption.Transmit chamber 7 and carry out turn-over for substrate is taken out to send into thin film deposition chamber or to substrate from preheating cavity, substrate transmits by the three-dimensional rotation mechanical manipulator transmitting in chamber 7 and completes, this three-dimensional rotation mechanical manipulator can carry out three-dimensional rotation, and rotation object is to select for realizing substrate coating face.Substrate heating device, for thin film deposition, is equipped with in thin film deposition chamber 8 in thin film deposition chamber 8, on substrate heating device, with slot, slot is used for inserting substrate fixed substrate, deposit film method using plasma or magnetron sputtering or inductance method.Thin film deposition chamber 8 can adopt stainless material or aluminum to make.
Processing step of the present invention is as follows:
First, the substrate transfer device in packing with substrate the substrate hanger that substrate is housed into chamber is connected, and after substrate transfer device is passed to the substrate hanger that substrate is housed surface treatment chamber and processes, then is delivered to and dries chamber and dry; By oven dry chamber mechanical manipulator, import one by one substrate into preheating cavity and carry out preheating, the substrate of process preheating imports thin film deposition chamber into through transmission chamber mechanical manipulator again and carries out thin film deposition, after having deposited, imports into and gets sheet chamber, after substrate temperature is down to room temperature, takes out.
Specific implementation process of the present invention, except substrate hanger is packed into, substrate packs chamber into and substrate takes out step, and other processing step all can complete by computer interface is program control.
The present invention is specifically implemented as follows:
1. open substrate and pack chamber door into, substrate transfer device in packing with substrate the substrate hanger that substrate is housed into chamber is connected, close and open substrate and pack chamber door into, by the program control selection of computer interface programsegment required or that readjust, confirm errorless rear start-up routine.
2. under program control, substrate hanger arrives before surface treatment chamber with transfer device, and partition door is opened, substrate hanger enters surface treatment chamber, partition door is closed, and surface treatment chamber interior is provided with acid tank and spray warm water tank, and substrates of different is carried out to selectable surface treatment.
3. after surface treatment completes, automatically open surface treatment chamber and dry chamber partition door, substrate hanger enters oven dry chamber, surface treatment chamber is closed with oven dry chamber partition door, dry chamber and be provided with hot high pure nitrogen air knife and mechanical manipulator, between air knife and mechanical manipulator, be provided with partition door, to prevent that mechanical manipulator from making moist, air knife dries up substrate surface.
4. between air knife and mechanical manipulator, partition door is opened, substrate hanger enters mechanical manipulator position, partition door is closed, to preheating cavity, pour drying nitrogen, pressure reaches after normal atmosphere, dries high vacuum push-pull valve between chamber and preheating cavity and opens, and by the mechanical manipulator of drying chamber, substrate is imported in preheating cavity on substrate hanger, after all substrate transmission complete, dry high vacuum push-pull valve between chamber and preheating cavity and close.
5. give preheating cavity pumping high vacuum and start heating, after reaching requirement, between preheating cavity and transmission chamber, high vacuum push-pull valve is opened, transmit three-dimensional mechanical hand in chamber takes out substrate from preheating cavity, any one that put into four thin film deposition chambeies carried out thin film deposition, and after having deposited, in transmitting chamber, mechanical manipulator takes out substrate, or carries out thin film deposition put back to thin film deposition chamber after turn-over in transmitting chamber in again, also can substrate be put into and get sheet chamber according to processing requirement, after temperature drops to room temperature, take out.
Be not difficult to find, the present invention can realize the successive sedimentation of thin-film material, can in the different chamber of same equipment, be coated with continuously dissimilar thin-film material, can plated film not carried out in vacuum breaker situation in substrate two sides, a whole set of battery process completes in airtight or vacuum environment, avoid, because the degradation that reason causes is stain in outside, having improved stability and the repeatability of technique.

Claims (7)

1. a film deposition equipment, comprise substrate preprocessing part and thin film deposition part, it is characterized in that, described substrate preprocessing part comprises that the substrate that is communicated with successively and is separated by pneumatic door packs chamber (1), surface treatment chamber (2) into and dries chamber (3); Described substrate packs (3) between chamber (1), surface treatment chamber (2) and oven dry chamber into and is transmitted the substrate hanger (10) of substrate is housed by transfer device; Described thin film deposition partly comprises successively the preheating cavity (6) that is communicated with, transmits chamber (7) and thin film deposition chamber (8), between described preheating cavity (6) and transmission chamber (7), is provided with high vacuum push-pull valve; Described oven dry chamber (3) is connected with preheating cavity (6), between described oven dry chamber (3) and preheating cavity (6), is provided with high vacuum push-pull valve; In described preheating cavity (6), be provided with substrate hanger (10), in described oven dry chamber (3), be provided with substrate is suspended to the mechanical manipulator on the substrate hanger (10) in preheating cavity (6); In described transmission chamber (7), be provided with for the substrate in preheating cavity (6) being sent into the three-dimensional rotation mechanical manipulator in thin film deposition chamber; Described preheating cavity (6) is also connected with vacuum extractor with nitrogen charging device respectively; Described surface treatment chamber (2) comprises a dilute acid bath and a treatment trough.
2. film deposition equipment according to claim 1, is characterized in that, described thin film deposition part also comprise with transmit that chamber (7) is communicated with get sheet chamber (9).
3. film deposition equipment according to claim 1, is characterized in that, is provided with hot high pure nitrogen air knife in described oven dry chamber (3); Between described hot high pure nitrogen air knife and mechanical manipulator, be provided with partition door.
4. film deposition equipment according to claim 1, is characterized in that, in described thin film deposition chamber (8), substrate heating device is housed, and on described substrate heating device, band is useful on the slot of fixed substrate.
5. film deposition equipment according to claim 1, is characterized in that, described thin film deposition chamber (8) using plasma method, magnetron sputtering method or inductance method deposit film.
6. film deposition equipment according to claim 1, is characterized in that, described thin film deposition chamber (8) adopts stainless material or aluminum to make.
7. film deposition equipment according to claim 1, is characterized in that, described substrate hanger (10) top is provided with T-shaped web member (11); Described T-shaped web member (11) is connected with described transfer device.
CN201210042641.4A 2012-02-23 2012-02-23 Thin film deposition equipment Active CN102560375B (en)

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CN103540894B (en) * 2012-07-17 2016-08-03 无锡华润上华科技有限公司 Titanium nitride thin membrane preparation method and system
CN104289382B (en) * 2014-07-10 2019-04-05 华东师范大学 Using rotation suction method microchannel plate side wall deposition film method and its dedicated unit
CN107475672A (en) * 2017-08-08 2017-12-15 顺安(天津)塑胶制品有限公司 One kind operates flexible mobile phone metal-back plated film robot
CN114592171B (en) * 2022-01-21 2022-09-23 杭州启俄微纳科技有限公司 Film coating machine
CN115287607B (en) * 2022-08-16 2024-03-19 无锡乘风航空工程技术有限公司 High-efficiency turbine blade electron beam physical vapor deposition device

Citations (3)

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Publication number Priority date Publication date Assignee Title
JPH0466119A (en) * 1990-07-06 1992-03-02 Hitachi Ltd Vacuum treatment device
CN1440222A (en) * 2002-02-05 2003-09-03 株式会社半导体能源研究所 Manufacturing system and method, operational method therefor and luminating device
CN202626284U (en) * 2012-02-23 2012-12-26 上海中智光纤通讯有限公司 Thin film deposition equipment

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Publication number Priority date Publication date Assignee Title
US20100147396A1 (en) * 2008-12-15 2010-06-17 Asm Japan K.K. Multiple-Substrate Transfer Apparatus and Multiple-Substrate Processing Apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0466119A (en) * 1990-07-06 1992-03-02 Hitachi Ltd Vacuum treatment device
CN1440222A (en) * 2002-02-05 2003-09-03 株式会社半导体能源研究所 Manufacturing system and method, operational method therefor and luminating device
CN202626284U (en) * 2012-02-23 2012-12-26 上海中智光纤通讯有限公司 Thin film deposition equipment

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Effective date of registration: 20160815

Address after: 225400 Jiangsu city of Taizhou Province Branch Road, Taixing city high tech Industrial Park on the west side

Patentee after: China wisdom (Taixing) Power Technology Co., Ltd.

Address before: 201108 Shanghai, Minhang District Jin Road, room 4299, No. 208

Patentee before: Shanghai CIIC Optical Fiber Communication Co., Ltd.