CN220352223U - Device and system for preparing heterojunction solar cell by adopting RPD and PVD - Google Patents

Abstract

The application discloses a device and a system for preparing a heterojunction solar cell by adopting RPD and PVD, and belongs to the field of solar cells. The device comprises an inlet chamber group for environmental transition, a first surface coating chamber for coating a first surface of a battery piece, a second surface coating chamber group for coating a second surface of the battery piece, an outlet chamber group for environmental transition and a main control unit; the first surface coating chamber comprises a first PVD magnetron sputtering chamber; the second surface coating chamber group comprises an RPD coating chamber and a second PVD magnetron sputtering chamber which are sequentially arranged, and an RPD+PVD composite TCO film is prepared on the second surface of the battery piece; the composite TCO film is a laminated composite film formed by depositing a PVD film on one surface of the RPD film, which is far away from the silicon wafer. The preparation method can reduce the preparation cost under the condition of ensuring the preparation efficiency and the energy conversion rate of the SHJ battery, and breaks through the problem of limited productivity of RPD equipment.

Description

Device and system for preparing heterojunction solar cell by adopting RPD and PVD

Technical Field

The application belongs to the technical field of solar energy, relates to preparation of battery pieces, and in particular relates to a device and a system for preparing a heterojunction solar cell by adopting RPD and PVD.

Background

Currently, PVD (Physical Vapor Deposition ) equipment is generally used for preparing heterojunction solar cells, but the conversion efficiency of solar cells prepared by PVD equipment is not very ideal. The RPD (reactive plasma deposition ) equipment has remarkable advantages in the aspect of preparing the high-efficiency heterojunction solar cell, and the conversion efficiency of the prepared solar cell can be improved by 0.1-0.3% compared with that of PVD; however, the RPD device has its own defect that the productivity is smaller, if all the coating is completed by using the RPD device, the requirement of large productivity cannot be met, and if the RPD device is increased to increase the productivity, the problem of high equipment cost is caused.

In the prior art, in order to solve the above problems, two deposition processes are used in combination, but generally, an RPD deposition process is used to prepare a TCO film on the front surface of the SHJ battery, and a PVD process is used to prepare a TCO film on the back surface of the SHJ battery, so as to achieve the purpose of improving the energy conversion efficiency of the SHJ battery under the condition of controlling the cost. However, this method only solves the above problems to a certain extent, but cannot completely solve the above problems, because in this combination method, the demand for RPD devices is still large, and the production capacity is limited, and the above technical problems still exist to a certain extent.

Disclosure of Invention

The present application aims to solve, at least to some extent, one of the technical problems in the related art described above.

Therefore, the purpose of the application is to provide a device for preparing a heterojunction solar cell by adopting RPD and PVD, which can reduce the equipment input cost to the greatest extent on the premise of ensuring the conversion efficiency of the prepared cell, and can break through the problem of limited productivity of the RPD equipment.

In order to solve the technical problems, the application is realized as follows:

the embodiment of the application provides a device for preparing a heterojunction solar cell by adopting RPD and PVD, which comprises: the device comprises an inlet end chamber group for realizing the transition from the external environment to the film making process environment, a first surface film coating chamber for preparing a TCO film on a first surface of a battery piece, a second surface film coating chamber group for preparing a TCO film on a second surface of the battery piece, an outlet end chamber group for realizing the transition from the film making process environment to the external environment, and a main control unit connected with each chamber group and used for controlling the normal operation of each chamber group;

the first surface coating chamber comprises a first PVD magnetron sputtering chamber;

the second surface coating chamber group comprises an RPD coating chamber and a second PVD magnetron sputtering chamber which are sequentially arranged, and is used for preparing an RPD+PVD composite TCO film on the second surface of the battery piece; the composite TCO film is a laminated composite film formed by depositing a PVD film on one surface of the RPD film, which is far away from the battery piece silicon wafer.

In addition, the device for preparing the heterojunction solar cell by adopting the RPD and the PVD can also have the following additional technical characteristics:

in some embodiments, 1-10 rotating cathodes or planar cathodes are arranged in the chamber of the first PVD magnetron sputtering chamber, and any cathode is downwards coated;

1-8 plasma generating devices are arranged in the RPD coating chamber, and the plasma generating devices are arranged in any combination mode; each plasma device is correspondingly provided with a crucible for installing a target, and a target supply structure for automatically supplying the target is arranged below the crucible; the plasma generating device is coated upwards;

1-10 rotating cathodes or plane cathodes are arranged in the chamber of the second PVD magnetron sputtering chamber, and any cathode is coated upwards.

In some embodiments, the inlet chamber group comprises an inlet lock chamber, an inlet buffer chamber and an inlet transition chamber which are sequentially arranged; the outlet chamber group comprises an outlet transition chamber, an outlet buffer chamber and an outlet lock chamber; the inlet end of the inlet end lock chamber, the inlet end buffer chamber, the outlet end lock chamber and the outlet end of the outlet end lock chamber are all provided with gate valve structures; the gate valve structure is connected with the main control unit.

In some embodiments, a first transmission mode changing structure is arranged in the cavity of the inlet transition chamber, so that the transmission mode of the carrier plate is changed from a discontinuous mode to a continuous mode;

and a second transmission mode changing structure is arranged in the cavity of the outlet end transition chamber, so that the transmission mode of the carrier plate is changed from a continuous mode to an intermittent mode.

In some embodiments, the chambers of the inlet lock chamber, the inlet buffer chamber, the outlet buffer chamber and the outlet lock chamber are respectively provided with a first vacuumizing pump set, and the chambers are respectively provided with a first vacuum gauge set; the first vacuumizing pump set is connected with the corresponding chamber; the first vacuumizing pump set and the first vacuum gauge set are connected with the main control unit, and the main control unit controls the first vacuumizing pump set to work according to the measurement result of the first vacuum gauge set so as to vacuumize the cavity;

the vacuum degree in the chambers of the inlet lock chamber, the inlet buffer chamber and the inlet transition chamber is sequentially enhanced; and the vacuum degree in the chambers of the outlet transition chamber, the outlet buffer chamber and the outlet lock chamber is sequentially weakened.

In some embodiments, a heater for heating the carrier plate and the battery piece and a first thermometer for measuring the real-time temperature are arranged in the chamber of the inlet buffer chamber, the heater and the first thermometer are both connected with the main control unit, and the main control unit controls the heater to work according to the measurement result of the first thermometer.

In some embodiments, a first atmosphere buffer structure is further configured in the chamber of the inlet buffer chamber, and the first atmosphere buffer structure is arranged near a gate valve of the inlet transition chamber;

the first atmosphere buffer structure is connected with an external compensation gas path system and is used for injecting atmosphere to reduce the fluctuation of the pressure of a subsequent process cavity when the door is opened;

a first gas mass flowmeter is arranged in the first atmosphere buffer structure and is used for measuring the amount of injected gas;

the first atmosphere buffer structure and the first gas mass flowmeter are connected with the main control unit, and the main control unit controls the operation of the atmosphere buffer structure according to the injected gas amount.

In some embodiments, a cooler for cooling the carrier plate and the battery piece and a second thermometer for measuring the real-time temperature are arranged in the cavity of the outlet buffer chamber, the cooler and the second thermometer are both connected with the main control unit, and the main control unit controls the cooler to work according to the measurement result of the second thermometer.

In some embodiments, a second atmosphere buffer structure is further configured in the cavity of the outlet buffer chamber, and the second atmosphere buffer structure is disposed near a gate valve of the outlet transition chamber;

the second atmosphere buffer structure is connected with an external compensation gas path system and is used for injecting atmosphere to reduce the fluctuation of the pressure of a subsequent process cavity when the door is opened;

a second gas mass flowmeter is arranged in the second atmosphere buffer structure and is used for measuring the amount of injected gas;

the second atmosphere buffer structure and the second gas mass flowmeter are both connected with the main control unit, and the main control unit controls the second atmosphere buffer structure to work according to the injected gas quantity.

In some embodiments, a group or two groups of second vacuumizing pump groups are respectively arranged at the chambers of the inlet end transition chamber, the first PVD magnetron sputtering chamber, the second PVD magnetron sputtering chamber and the outlet end transition chamber, and second vacuum gauge groups are respectively arranged in the chambers; the second vacuumizing pump set is connected with the corresponding chamber; the second vacuumizing pump set and the second vacuum gauge set are connected with the main control unit, and the main control unit controls the second vacuumizing pump set to work according to the measurement result of the second vacuum gauge set so as to vacuumize the cavity.

In some embodiments, gas isolation cavities are arranged between the first PVD magnetron sputtering chamber and the RPD coating chamber and between the RPD coating chamber and the second PVD magnetron sputtering chamber, so that atmosphere environments of two adjacent chambers are isolated;

the process gas circuit system comprises a main control unit, a RPD (reactive power deposition) magnetron sputtering chamber, a second PVD magnetron sputtering chamber, a first PVD magnetron sputtering chamber, a second PVD magnetron sputtering chamber, a third PVD magnetron sputtering chamber, a fourth PVD magnetron sputtering chamber, a fifth PVD magnetron sputtering chamber and a fourth PVD magnetron sputtering chamber.

The embodiment of the application also provides a preparation system of the heterojunction solar cell, which comprises the device for preparing the heterojunction solar cell by adopting RPD and PVD.

Compared with the prior art, the utility model has at least the following beneficial effects:

in the embodiment of the application, the device for preparing the heterojunction solar cell by adopting the RPD and the PVD adopts a unique mode to realize the combination of the RPD and the PVD, the TCO film on one side of the cell is prepared by adopting a PVD mode, the TCO film on the other side of the cell is prepared into the composite film by adopting an RPD+PVD mode, the energy conversion efficiency of the PVD films on two sides is improved, the transition dependence on RPD equipment is avoided, and the problem that the productivity of the RPD equipment is small and limited is avoided.

The heterojunction solar cell preparation system comprises the heterojunction solar cell preparation device, so that the heterojunction solar cell preparation device at least has all the characteristics and advantages of the heterojunction solar cell preparation device, and the heterojunction solar cell preparation device is not described in detail herein. Additional aspects and advantages of the application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the utility model.

Drawings

Fig. 1 is a schematic structural diagram of an apparatus for fabricating heterojunction solar cells using RPD and PVD according to an embodiment of the present application.

Reference numerals illustrate:

c1-an inlet lock chamber; c2-an inlet buffer chamber; a C3-inlet transition chamber; c4-a first PVD magnetron sputtering chamber; a C5-RPD coating chamber; c6-a second PVD magnetron sputtering chamber; c7-an outlet transition chamber; c8-an outlet buffer chamber; c9-out of the lock chamber.

Detailed Description

The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.

The embodiments of the present application will be described in detail below with reference to the accompanying drawings by means of specific embodiments and application scenarios thereof.

Referring to fig. 1, in some embodiments of the present application, an apparatus for preparing a heterojunction solar cell by using RPD and PVD is provided, which can be applied to a preparation process of a high-efficiency heterojunction solar cell, for example, to realize a film coating process on a solar cell in the preparation process of a heterojunction solar cell. The RPD and PVD composite device can realize the preparation of an RPD+PVD composite film, and the composite film has excellent photoelectric performance and can improve the performance of a heterojunction solar cell; the composite device can fully utilize the advantages of RPD coating, and simultaneously, the PVD is used for sharing part of coating steps, so that the defect of insufficient productivity of RPD equipment is avoided, the dependence on the RPD equipment is reduced, and the quality of a film layer is met.

Specifically, according to fig. 1, in one embodiment of the present application, an apparatus for fabricating a heterojunction solar cell using RPD and PVD includes:

the automatic wafer loading mechanism, the inlet end lock chamber C1, the inlet end buffer chamber C2, the inlet end transition chamber C3, the first PVD magnetron sputtering chamber C4, the RPD coating chamber C5, the second PVD magnetron sputtering chamber C6, the outlet end transition chamber C7, the outlet end buffer chamber C8 and the outlet end lock chamber C9 are sequentially arranged. And gate valve structures are arranged between the automatic sheet loading mechanism and the inlet lock chamber C1, between the inlet lock chamber C1 and the inlet buffer chamber C2, between the inlet buffer chamber C2 and the inlet buffer chamber C3, between the outlet buffer chamber C7 and the outlet buffer chamber C8 and between the outlet buffer chamber C8 and the outlet lock chamber C9, and are used for opening and allowing battery sheets to pass through when the former structure or the chamber finishes a preparation step and enters the latter chamber, and then closing and keeping an isolated state between the two chambers. Atmosphere isolation cavities are arranged between the first PVD magnetron sputtering chamber C4 and the RPD coating chamber C5 and between the RPD coating chamber C5 and the second PVD magnetron sputtering chamber C6, and the atmosphere isolation function is to prevent gas of two adjacent process cavities from being communicated, so that process parameters with great differences can be selected when the adjacent process cavities are coated. The gas isolation device is typically a molecular pump set with a large pumping speed.

In this embodiment, corresponding conveying structures are disposed in each chamber, so that the carrier plate carrying the battery pieces can be conveyed in each chamber and between the chambers, and thus a designated station is reached for realizing each preparation step. The transmission structure can adopt the structure existing in the prior art, and the application is not excessively limited. The automatic feeding mechanism is also realized by adopting the existing structure and is used for automatically feeding sheets.

In this embodiment, each of the chambers C1-C9 includes a corresponding chamber (also referred to as an inner chamber) and structures, components, devices, systems, etc. disposed inside and outside the chamber for implementing the process requirements and/or specific functions of the chamber before and after the TCO film is produced and in the film production.

In this embodiment, the two ends of the chamber of the inlet lock chamber C1 are respectively in the atmospheric environment and the transitional vacuum state of C2, so the purpose of the inlet lock chamber C1 is to realize the transition between the atmospheric environment and the transitional vacuum state, which is also called as rough vacuum state. The inlet end door valve of the inlet end lock chamber C1 is in contact with the atmosphere, the inlet end door valve is opened (at the moment, the outlet end door valve is closed) to receive the carrier plate transmitted by the automatic loading mechanism in the atmosphere state, then the inlet end door valve is closed, the vacuumizing operation is carried out, and the air pressure in the carrier plate is pumped to the rough vacuum state. An independent vacuumizing pump set is arranged at the chamber of the inlet lock chamber C1 and is connected with the inner cavity of the inlet lock chamber C1, and the chamber of the inlet lock chamber C1 is vacuumized through the action of the vacuumizing pump set; the vacuum gauge is further arranged in the cavity of the inlet lock chamber C1 and used for measuring the vacuum degree in the cavity in real time, the vacuum gauge is connected with a main control unit arranged outside, the main control unit compares the real-time vacuum degree measured by the vacuum gauge with a preset vacuum threshold value, and the vacuum pumping pump set is controlled to work according to a comparison result, and vacuumizing is stopped when the vacuum degree reaches the vacuum threshold value.

In this embodiment, the in-end buffer chamber C2 receives the carrier plate transferred from the in-end lock chamber C1, heats the carrier plate and the silicon wafer thereon, and transfers the carrier plate to the next chamber transition vacuum chamber C3. Correspondingly, a heater and a thermometer are arranged in the chamber of the inlet buffer chamber C2, the heater and the thermometer are connected with a main control unit, the main control unit compares the real-time temperature measured by the thermometer with a preset temperature threshold value, and controls the heater to work according to the comparison result, and heating is stopped when the temperature threshold value is reached. The two inlet and outlet ends of the inlet buffer chamber C2 are respectively in a rough vacuum state and a film-forming vacuum state of C3, so the setting purpose of the inlet buffer chamber C2 further comprises the realization of transition buffer between the rough vacuum state and the film-forming vacuum state. The inlet end door valve of the inlet end buffer chamber C2 is connected with the inlet end lock chamber C1, the inlet end door valve is opened (at the moment, the outlet end door valve is closed) to receive the carrier plate transmitted by the inlet end lock chamber C1 in the state of vacuum exchange of C1 and C2, then the inlet end door valve is closed, the vacuum pumping operation is carried out, and the air pressure in the carrier plate is pumped to the vacuum state of film making. An independent vacuumizing pump set is arranged at the chamber of the inlet buffer chamber, the vacuumizing pump set is connected with the inner cavity of the inlet buffer chamber C2, and the inner cavity of the inlet buffer chamber C2 is vacuumized through the action of the vacuumizing pump set; the vacuum gauge is further arranged in the cavity of the inlet end buffer chamber C2 and used for measuring the vacuum degree in the cavity in real time, the vacuum gauge is connected with the main control unit arranged outside, the main control unit compares the real-time vacuum degree measured by the vacuum gauge with a preset vacuum threshold value, and the vacuum pumping pump set is controlled to work according to a comparison result, and the vacuum pumping is stopped when the vacuum degree reaches the vacuum threshold value. An atmosphere buffer structure is further arranged in the cavity of the inlet buffer chamber C2, the atmosphere buffer structure is arranged at the door valve of the near-inlet transition chamber C3 and is connected with a compensation gas path system, and when the door is opened, atmosphere is injected by the atmosphere buffer structure so as to reduce fluctuation of pressure intensity of a subsequent process chamber when the door is opened, and specifically: and before a door valve between the inlet buffer chamber C2 and the inlet transition chamber C3 is opened, gas is introduced from an atmosphere buffer structure, the pressure in the chamber C2 is regulated to be the same as that of the inlet transition chamber C3, and thus the process pressure fluctuation of the inlet transition chamber C3, the first PVD magnetron sputtering chamber C4 or the RPD coating chamber C5 can not be caused by the door opening. The atmosphere buffer structure is internally provided with a gas mass flowmeter for measuring the amount of injected gas. The atmosphere buffer structure and the gas mass flowmeter are connected with the main control unit, and the main control unit receives the gas amount and controls the operation of the atmosphere buffer structure according to whether the gas amount reaches the standard.

In this embodiment, the inlet transition chamber C3 receives the carrier plate transferred from the inlet buffer chamber C2, converts the transmission mode of the carrier plate from the intermittent mode to the continuous mode, and converts the transmission speed to the transmission speed set by the process, and transmits the carrier plate to the first PVD magnetron sputtering chamber C4 of the next chamber for coating. The structure of converting the discontinuous mode into the continuous mode can adopt the existing structure, and the application is not limited excessively. In addition, in order to ensure the vacuum degree in the inlet transition chamber C3, an independent vacuumizing pump set is arranged at the chamber of the inlet transition chamber C3, the vacuumizing pump set is connected with the inner cavity of the inlet transition chamber C3, and the inlet transition chamber C3 is vacuumized through the action of the vacuumizing pump set; the vacuum gauge is further arranged in the cavity of the inlet end transition chamber C3 and used for measuring the vacuum degree in the cavity in real time, the vacuum gauge is connected with the main control unit arranged outside, the main control unit compares the real-time vacuum degree measured by the vacuum gauge with a preset vacuum threshold value, and the vacuum pumping pump set is controlled to work according to a comparison result, and the vacuum pumping is stopped when the vacuum degree reaches the vacuum threshold value.

In this embodiment, 1-10 rotating cathodes or planar cathode devices are installed in the chamber of the first PVD magnetron sputtering chamber C4, and any cathode can be used to realize downward coating for the deposition preparation of the first TCO film on the p-side (the side with the p-type microcrystalline silicon layer) of the incoming cell. A path of process gas path system containing a gas mass flowmeter is arranged in the chamber of the first PVD magnetron sputtering chamber C4, a gas outlet of the process gas path system is arranged in the chamber, and the process gas path system and the gas mass flowmeter therein are connected with a main control unit and used for injecting process atmosphere according to instructions of the main control unit so as to ensure that the atmosphere environment in the sputtering chamber meets the film deposition requirement. In addition, in order to ensure that the vacuum degree in the cavity of the first PVD magnetron sputtering chamber C4 is suitable for film preparation, an independent vacuumizing pump set is arranged at the cavity of the first PVD magnetron sputtering chamber C4, the vacuumizing pump set is connected with the inner cavity of the first PVD magnetron sputtering chamber C4, and the cavity of the first PVD magnetron sputtering chamber C4 is vacuumized through the action of the vacuumizing pump set; the vacuum gauge is further arranged in the chamber of the first PVD magnetron sputtering chamber C4 and used for measuring the vacuum degree in the chamber in real time, the vacuum gauge is connected with the main control unit arranged outside, the main control unit compares the real-time vacuum degree measured by the vacuum gauge with a preset vacuum threshold value, and the vacuum pumping pump set is controlled to work according to a comparison result, and the vacuum pumping is stopped when the vacuum degree reaches the vacuum threshold value.

In another embodiment, a plurality of process gas circuit systems containing gas mass flow meters are arranged at the chamber of the first PVD magnetron sputtering chamber C4. The air outlets of the multi-path process gas circuit system are respectively arranged at each position in the first PVD magnetron sputtering chamber C4 so as to better inject the atmosphere and ensure the uniformity of the atmosphere.

In another embodiment, the number of vacuum gauges in the cavity of the first PVD magnetron sputtering chamber C4 is plural, that is, the vacuum gauge group, each vacuum gauge in the vacuum gauge group is arranged at each position in the cavity of the first PVD magnetron sputtering chamber C4, and the vacuum degree of each position is collected, so that when leakage or failure occurs, the fault position can be measured more quickly and more sensitively, and the quality of thin film sputtering deposition is further ensured.

In this embodiment, the RPD coating chamber C5 receives the carrier plate transferred from the first PVD magnetron sputtering chamber C4, performs dynamic reactive ion coating according to the process setting, and sends the carrier plate to the second PVD magnetron sputtering chamber C6 of the next chamber after coating is completed. A plurality of (for example, 1-8) plasma generating devices are arranged in the RPD cavity, and the plasma generating devices are distributed in the cavity and are distributed in any combination mode; each plasma device is correspondingly provided with a crucible capable of installing a target, and a target supply structure for automatically supplying the target is arranged below the crucible; the chamber can only be coated upwards for preparing a second TCO film on the back side of the cell. And a path of process gas path system containing a gas mass flowmeter is arranged at the C5 chamber of the RPD coating chamber, a gas outlet of the process gas path system is arranged in the chamber, and the process gas path system and the gas mass flowmeter therein are connected with the main control unit and used for injecting process atmosphere according to the instruction of the main control unit so as to ensure that the atmosphere environment in the RPD coating chamber meets the film deposition requirement. In addition, in order to ensure that the vacuum degree in the cavity of the RPD coating cavity C5 is suitable for film preparation, an independent vacuumizing pump set is arranged at the cavity of the RPD coating cavity C5, the vacuumizing pump set is connected with the inner cavity of the RPD coating cavity C5, and the cavity of the RPD coating cavity C5 is vacuumized through the action of the vacuumizing pump set; the vacuum gauge is further arranged in the cavity of the RPD coating cavity C5 and used for measuring the vacuum degree in the cavity in real time, the vacuum gauge is connected with the main control unit arranged outside, the main control unit compares the real-time vacuum degree measured by the vacuum gauge with a preset vacuum threshold value, and the vacuum pumping pump set is controlled to work according to a comparison result, and the vacuum pumping is stopped when the vacuum degree reaches the vacuum threshold value.

In another embodiment, a multi-path process gas path system containing a gas mass flowmeter is arranged at the C5 chamber of the RPD coating chamber. The air outlets of the multi-path process gas path system are respectively arranged at each position in the cavity of the RPD coating cavity C5, so that the atmosphere can be better injected and the uniformity of the atmosphere can be ensured.

In another embodiment, the number of vacuum gauges in the cavity of the RPD coating cavity C5 is multiple, that is, the vacuum gauge group, each vacuum gauge in the vacuum gauge group is arranged at each position in the cavity of the RPD coating cavity C5, and the vacuum degree of each position is collected, so that when leakage or failure occurs, the fault position can be measured more quickly and more sensitively, and the quality of film deposition is further ensured.

In this embodiment, a plurality of pairs (e.g., 1-10 pairs) of rotating cathodes or planar cathode devices are installed in the chamber of the second PVD magnetron sputtering chamber C6, and any one of the cathodes can realize upward film plating, and together with the RPD chamber, the deposition of the transparent conductive film on the back of the battery is completed. The second PVD magnetron sputtering chamber C6 is used for preparing a third TCO film by sputtering on the outer surface (i.e. the surface far away from the silicon wafer) of the second TCO film, and the second TCO film and the third TCO film together form an rpd+pvd composite film, which is used as the TCO film on the front surface of the cell n, that is, a transparent conductive film. And a process gas circuit system containing a gas mass flowmeter is arranged at the chamber of the second PVD magnetron sputtering chamber C6, a gas outlet of the process gas circuit system is arranged in the chamber, and the process gas circuit system and the gas mass flowmeter therein are connected with a main control unit and are used for injecting process atmosphere according to the instruction of the main control unit so as to ensure that the atmosphere environment in the PVD magnetron sputtering chamber meets the film sputtering deposition requirement. In addition, in order to ensure that the vacuum degree in the cavity of the second PVD magnetron sputtering chamber C6 is suitable for film preparation, an independent vacuumizing pump set is arranged at the position of the second PVD magnetron sputtering chamber C6, the vacuumizing pump set is connected with the inner cavity of the second PVD magnetron sputtering chamber C6, and the cavity of the second PVD magnetron sputtering chamber C6 is vacuumized through the action of the vacuumizing pump set; and a vacuum gauge is further arranged in the chamber of the second PVD magnetron sputtering chamber C6 and used for measuring the vacuum degree in the chamber in real time, the vacuum gauge is connected with a main control unit arranged outside, the main control unit compares the real-time vacuum degree measured by the vacuum gauge with a preset vacuum threshold value, and the vacuum pumping pump set is controlled to work according to a comparison result, and the vacuum pumping is stopped when the vacuum degree reaches the vacuum threshold value.

In another embodiment, a multi-path process gas path system comprising a gas mass flowmeter is arranged at the chamber of the second PVD magnetron sputtering chamber C6. The air outlets of the multi-path process gas circuit system are respectively arranged at each position in the chamber of the second PVD magnetron sputtering chamber C6 so as to better inject the atmosphere and ensure the uniformity of the atmosphere.

In another embodiment, the number of vacuum gauges in the cavity of the second PVD magnetron sputtering chamber C6 is plural, that is, the vacuum gauge group, each vacuum gauge in the vacuum gauge group is arranged at each position in the cavity of the second PVD magnetron sputtering chamber C6, and the vacuum degree of each position is collected, so that when leakage or failure occurs, the fault position can be measured more quickly and more sensitively, and the quality of film deposition is further ensured.

The end-out transition chamber C7, the end-out buffer chamber C8, the end-out lock chamber C9, the end-in transition chamber C3, the end-in buffer chamber C2 and the end-in lock chamber C1 are arranged in a one-to-one correspondence manner, wherein:

the outlet transition chamber C7 is configured to convert the transmission mode of the carrier plate transferred from the preceding process vacuum chamber from a continuous mode to an intermittent mode, and convert the transmission speed to a transmission speed set by the process, and transmit the transmission speed to the subsequent outlet chamber and the sheet feeding mechanism. The independent vacuumizing pump set and the independent vacuum gauge set are arranged at the chamber of the outlet end transition chamber C7, so that the vacuum degree in the chamber of the outlet end transition chamber C7 after the door opening valve is closed is operated is guaranteed to meet the preset requirement.

The outlet buffer chamber C8 is used for cooling the carrier plate and the battery piece transmitted by the outlet transition chamber C7 and transmitting the carrier plate to the next chamber; the outlet buffer chamber C8 is provided with an independent vacuumizing pump set and a vacuum gauge set as the inlet buffer chamber C2 so as to ensure that the vacuum degree in the outlet buffer chamber meets the preset requirement after the door opening valve and the door closing valve are operated; an atmosphere buffer structure is also arranged. The atmosphere buffer structure is arranged at the door valve of the near-outlet end transition chamber C7, is connected with the compensation gas path system, and is used for injecting atmosphere when the door is opened so as to reduce the fluctuation of the pressure of a subsequent process chamber when the door is opened. The atmosphere buffer structure is internally provided with a gas mass flowmeter for measuring the amount of injected gas. The atmosphere buffer structure and the gas mass flowmeter are connected with the main control unit, and the main control unit receives the gas amount and controls the operation of the atmosphere buffer structure to reduce the fluctuation of the pressure of the process chamber when the door opening valve is opened according to whether the gas amount reaches the standard.

As a preferred embodiment, because the two chambers of the inlet end transition chamber C3 and the first PVD magnetron sputtering chamber C4, and the two chambers of the second PVD magnetron sputtering chamber C6 and the outlet end transition chamber C7 are all of a communicated structure, the two chambers can share one set of vacuumizing pump set and vacuum gauge set, and the vacuumizing position and the vacuum gauge setting position are uniformly arranged in the two chambers, so that the consistency of the air pressure change of each chamber in the vacuumizing process is ensured.

Optionally, the cooling of the carrier plate and the battery piece is realized by arranging a corresponding cooling device in the cavity. The cooling device can be a water cooling device or a temperature control system adopting other refrigerants, so that the setting of the environmental temperature of the chamber is realized.

The output lock chamber C9 receives the carrier plate transmitted from the output buffer chamber C8, realizes the state from vacuum return air to atmosphere through the output lock chamber, and sends the carrier plate to the automatic lifting platform. The outlet lock chamber C9 is provided with an independent vacuumizing pump set and a vacuum gauge set as the inlet lock chamber C1, and is used for vacuumizing the chamber after the door opening valve is closed, so that the chamber is in a rough vacuum state.

Optionally, in the present application, the order of the front plating film and the back plating film of the battery piece may be adjusted, for example, the back plating film is disposed on the front, and the front plating film is disposed on the back, specifically: the RPD coating chamber C5, the second PVD magnetron sputtering chamber C6 and the first PVD magnetron sputtering chamber C4 are sequentially arranged, and the arrangement modes of the other chambers and the chambers are unchanged.

Optionally, part or all of an inlet buffer chamber C2, an inlet transition chamber C3, a first PVD magnetron sputtering chamber C4, an RPD coating chamber C5, a second PVD magnetron sputtering chamber C6 and an outlet transition chamber C7 in the present application are configured with a variable temperature cold trap for controlling the moisture content. The implementation mode of the variable temperature cold trap is not excessively limited in the application, and the prior art is adopted.

Table 1 below is the performance data, including mobility and transmittance, of the TCO films of different thicknesses prepared by PVD, RPD, and RPD+PVD.

TABLE 1

As can be seen from Table 1, there are great advantages in both material mobility and transmittance with RPD coatings. However, the equipment cost of the RPD is high and the equipment capacity is not high. If the RPD+PVD combined mode is adopted for coating, the performance of the film prepared by adopting the RPD is the same as or even better than that of the film prepared by adopting the RPD only when the RPD film layer occupies 1/8 (or more) of the whole thickness.

It should be noted that in the prior art, there are the following schemes: depositing a TCO film on one side of the cell in an RPD mode, and forming the TCO film on the other side in a PVD+RPD mode; the preparation method solves the specific technical problem, but as the RPD equipment is required to be used for both sides of the preparation method, and one side of the preparation method is used independently, namely the use requirement on the RPD equipment is larger and is limited by the productivity of the RPD equipment, the technical problem recorded in the background technology of the application still exists, that is, the technical problem of the application cannot be solved.

The utility model is not described in detail in a manner known to those skilled in the art.

The embodiments of the present application have been described above with reference to the accompanying drawings, but the present application is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many forms may be made by those of ordinary skill in the art without departing from the spirit of the present application and the scope of the claims, which are also within the protection of the present application.

Claims (12)

1. An apparatus for fabricating a heterojunction solar cell using RPD and PVD, the apparatus comprising: the device comprises an inlet end chamber group for realizing the transition from the external environment to the film making process environment, a first surface film coating chamber for preparing a TCO film on a first surface of a battery piece, a second surface film coating chamber group for preparing a TCO film on a second surface of the battery piece, an outlet end chamber group for realizing the transition from the film making process environment to the external environment, and a main control unit connected with each chamber group and used for controlling the normal operation of each chamber group;

the first surface coating chamber comprises a first PVD magnetron sputtering chamber;

the second surface coating chamber group comprises an RPD coating chamber and a second PVD magnetron sputtering chamber which are sequentially arranged, and is used for preparing an RPD+PVD composite TCO film on the second surface of the battery piece; the composite TCO film is a laminated composite film formed by depositing a PVD film on one surface of the RPD film, which is far away from the battery piece silicon wafer.

2. The device for preparing the heterojunction solar cell by adopting the RPD and the PVD according to claim 1, wherein 1-10 rotating cathodes or planar cathodes are arranged in a chamber of the first PVD magnetron sputtering chamber, and any cathode is downwards coated;

1-8 plasma generating devices are arranged in the RPD coating chamber, and the plasma generating devices are arranged in any combination mode; each plasma generating device is correspondingly provided with a crucible for installing a target, and a target supply structure for automatically supplying the target is arranged below the crucible; the plasma generating device is coated upwards;

1-10 rotating cathodes or plane cathodes are arranged in the chamber of the second PVD magnetron sputtering chamber, and any cathode is coated upwards.

3. The device for preparing the heterojunction solar cell by adopting the RPD and the PVD according to claim 1, wherein the inlet chamber group comprises an inlet lock chamber, an inlet buffer chamber and an inlet transition chamber which are sequentially arranged; the outlet chamber group comprises an outlet transition chamber, an outlet buffer chamber and an outlet lock chamber; the inlet end of the inlet end lock chamber, the inlet end buffer chamber, the outlet end lock chamber and the outlet end of the outlet end lock chamber are all provided with gate valve structures; the gate valve structure is connected with the main control unit.

4. The device for preparing the heterojunction solar cell by adopting the RPD and the PVD according to claim 3, wherein a first transmission mode changing structure is arranged in the cavity of the inlet transition chamber, and the transmission mode of the carrier plate is changed from a discontinuous mode to a continuous mode;

and a second transmission mode changing structure is arranged in the cavity of the outlet end transition chamber, so that the transmission mode of the carrier plate is changed from a continuous mode to an intermittent mode.

5. The device for preparing the heterojunction solar cell by adopting the RPD and the PVD according to claim 3, wherein the chambers of the inlet lock chamber, the inlet buffer chamber, the outlet buffer chamber and the outlet lock chamber are respectively provided with a first vacuumizing pump set, and the chambers are respectively provided with a first vacuum gauge set; the first vacuumizing pump set is connected with the corresponding chamber; the first vacuumizing pump set and the first vacuum gauge set are connected with the main control unit, and the main control unit controls the first vacuumizing pump set to work according to the measurement result of the first vacuum gauge set so as to vacuumize the cavity;

the vacuum degree in the chambers of the inlet lock chamber, the inlet buffer chamber and the inlet transition chamber is sequentially enhanced; and the vacuum degree in the chambers of the outlet transition chamber, the outlet buffer chamber and the outlet lock chamber is sequentially weakened.

6. The device for preparing the heterojunction solar cell by adopting the RPD and the PVD according to claim 3, wherein a heater for heating the carrier plate and the battery piece and a first thermometer for measuring real-time temperature are arranged in a cavity of the inlet buffer chamber, the heater and the first thermometer are connected with the main control unit, and the main control unit controls the heater to work according to a measurement result of the first thermometer.

7. The device for preparing the heterojunction solar cell by adopting the RPD and the PVD according to claim 3, wherein a first atmosphere buffer structure is further arranged in the cavity of the inlet buffer chamber, and the first atmosphere buffer structure is arranged near a gate valve of the inlet transition chamber;

the first atmosphere buffer structure is connected with an external compensation gas path system and is used for injecting atmosphere to reduce the fluctuation of the pressure of a subsequent process cavity when the door is opened;

a first gas mass flowmeter is arranged in the first atmosphere buffer structure and is used for measuring the amount of injected gas;

the first atmosphere buffer structure and the first gas mass flowmeter are connected with the main control unit, and the main control unit controls the operation of the atmosphere buffer structure according to the injected gas amount.

8. The device for preparing the heterojunction solar cell by adopting the RPD and the PVD according to claim 3, wherein a cooler for cooling the carrier plate and the battery piece and a second thermometer for measuring real-time temperature are arranged in the cavity of the outlet buffer chamber, the cooler and the second thermometer are connected with the main control unit, and the main control unit controls the cooler to work according to the measurement result of the second thermometer.

9. The device for preparing the heterojunction solar cell by adopting the RPD and the PVD according to claim 3, wherein a second atmosphere buffer structure is further arranged in the cavity of the outlet buffer chamber, and the second atmosphere buffer structure is arranged at a gate valve near the outlet transition chamber;

the second atmosphere buffer structure is connected with an external compensation gas path system and is used for injecting atmosphere to reduce the fluctuation of the pressure of a subsequent process cavity when the door is opened;

a second gas mass flowmeter is arranged in the second atmosphere buffer structure and is used for measuring the amount of injected gas;

the second atmosphere buffer structure and the second gas mass flowmeter are both connected with the main control unit, and the main control unit controls the second atmosphere buffer structure to work according to the injected gas quantity.

10. The device for preparing the heterojunction solar cell by adopting the RPD and the PVD according to claim 3, wherein a group or two groups of second vacuumizing pump groups are respectively arranged at the chambers of the inlet transition chamber, the first PVD magnetron sputtering chamber, the second PVD magnetron sputtering chamber and the outlet transition chamber, and second vacuum gauge groups are respectively arranged in the chambers; the second vacuumizing pump set is connected with the corresponding chamber; the second vacuumizing pump set and the second vacuum gauge set are connected with the main control unit, and the main control unit controls the second vacuumizing pump set to work according to the measurement result of the second vacuum gauge set so as to vacuumize the cavity.

11. The device for preparing the heterojunction solar cell by adopting the RPD and the PVD according to claim 1, wherein a gas isolation cavity is arranged between the first PVD magnetron sputtering chamber and the RPD coating chamber and between the RPD coating chamber and the second PVD magnetron sputtering chamber, so that the atmosphere environment of two adjacent chambers is isolated;

the process gas circuit system comprises a main control unit, a RPD (reactive power deposition) magnetron sputtering chamber, a second PVD magnetron sputtering chamber, a first PVD magnetron sputtering chamber, a second PVD magnetron sputtering chamber, a third PVD magnetron sputtering chamber, a fourth PVD magnetron sputtering chamber, a fifth PVD magnetron sputtering chamber and a fourth PVD magnetron sputtering chamber.

12. A system for fabricating a heterojunction solar cell comprising an apparatus for fabricating a heterojunction solar cell as claimed in any one of claims 1 to 11 using RPD and PVD.