CN102522404B - 低触发电压的双向scr esd保护电路 - Google Patents
低触发电压的双向scr esd保护电路 Download PDFInfo
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- CN102522404B CN102522404B CN 201110457538 CN201110457538A CN102522404B CN 102522404 B CN102522404 B CN 102522404B CN 201110457538 CN201110457538 CN 201110457538 CN 201110457538 A CN201110457538 A CN 201110457538A CN 102522404 B CN102522404 B CN 102522404B
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- 230000001681 protective effect Effects 0.000 title abstract description 5
- 230000002457 bidirectional effect Effects 0.000 title abstract 2
- 230000001960 triggered effect Effects 0.000 title abstract 2
- 238000002347 injection Methods 0.000 claims abstract description 68
- 239000007924 injection Substances 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 20
- 239000001301 oxygen Substances 0.000 claims abstract description 20
- 229920005591 polysilicon Polymers 0.000 claims description 22
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000003990 capacitor Substances 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000024241 parasitism Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN 201110457538 CN102522404B (zh) | 2011-12-30 | 2011-12-30 | 低触发电压的双向scr esd保护电路 |
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CN 201110457538 CN102522404B (zh) | 2011-12-30 | 2011-12-30 | 低触发电压的双向scr esd保护电路 |
Publications (2)
Publication Number | Publication Date |
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CN102522404A CN102522404A (zh) | 2012-06-27 |
CN102522404B true CN102522404B (zh) | 2013-09-18 |
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CN 201110457538 Active CN102522404B (zh) | 2011-12-30 | 2011-12-30 | 低触发电压的双向scr esd保护电路 |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102969312B (zh) * | 2012-12-18 | 2015-02-04 | 江南大学 | 一种双向衬底触发的高压esd保护器件 |
CN106783806A (zh) * | 2016-11-30 | 2017-05-31 | 北京中电华大电子设计有限责任公司 | 一种cdm保护电路结构 |
CN108269800A (zh) * | 2016-12-30 | 2018-07-10 | 中芯国际集成电路制造(上海)有限公司 | 用于高压器件的静电保护单元及其制作方法、电子装置 |
US10658364B2 (en) * | 2018-02-28 | 2020-05-19 | Stmicroelectronics S.R.L. | Method for converting a floating gate non-volatile memory cell to a read-only memory cell and circuit structure thereof |
CN108649028B (zh) * | 2018-05-22 | 2020-06-30 | 湖南大学 | 静电保护器件 |
CN111599806B (zh) * | 2020-05-18 | 2022-06-21 | 深圳市晶扬电子有限公司 | 用于esd保护的低功耗双向scr器件和静电防护电路 |
CN113725213B (zh) * | 2021-11-01 | 2022-03-01 | 江苏应能微电子有限公司 | 具有补偿阱可控硅结构的瞬态电压抑制保护器件及其制作方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6960792B1 (en) * | 2003-09-30 | 2005-11-01 | National Semiconductor Corporation | Bi-directional silicon controlled rectifier structure with high holding voltage for latchup prevention |
CN101174629A (zh) * | 2006-10-30 | 2008-05-07 | 上海华虹Nec电子有限公司 | 用于cmos静电放电保护的可控硅结构 |
CN101807598A (zh) * | 2010-03-17 | 2010-08-18 | 浙江大学 | 一种pnpnp型双向可控硅 |
CN102034858A (zh) * | 2010-10-28 | 2011-04-27 | 浙江大学 | 一种用于射频集成电路静电放电防护的双向可控硅 |
CN102082183A (zh) * | 2010-10-22 | 2011-06-01 | 上海北京大学微电子研究院 | 用于静电放电保护的器件和系统 |
CN202394974U (zh) * | 2011-12-30 | 2012-08-22 | 无锡新硅微电子有限公司 | 低触发电压的双向scr esd保护电路 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006074012A (ja) * | 2004-08-06 | 2006-03-16 | Renesas Technology Corp | 双方向型静電気放電保護素子 |
TW200905860A (en) * | 2007-07-31 | 2009-02-01 | Amazing Microelectroing Corp | Symmetric type bi-directional silicon control rectifier |
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2011
- 2011-12-30 CN CN 201110457538 patent/CN102522404B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6960792B1 (en) * | 2003-09-30 | 2005-11-01 | National Semiconductor Corporation | Bi-directional silicon controlled rectifier structure with high holding voltage for latchup prevention |
CN101174629A (zh) * | 2006-10-30 | 2008-05-07 | 上海华虹Nec电子有限公司 | 用于cmos静电放电保护的可控硅结构 |
CN101807598A (zh) * | 2010-03-17 | 2010-08-18 | 浙江大学 | 一种pnpnp型双向可控硅 |
CN102082183A (zh) * | 2010-10-22 | 2011-06-01 | 上海北京大学微电子研究院 | 用于静电放电保护的器件和系统 |
CN102034858A (zh) * | 2010-10-28 | 2011-04-27 | 浙江大学 | 一种用于射频集成电路静电放电防护的双向可控硅 |
CN202394974U (zh) * | 2011-12-30 | 2012-08-22 | 无锡新硅微电子有限公司 | 低触发电压的双向scr esd保护电路 |
Non-Patent Citations (1)
Title |
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JP特开2006-74012A 2006.03.16 |
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GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Bidirectional SCR ESD protective circuit for low triggered voltage Effective date of registration: 20140806 Granted publication date: 20130918 Pledgee: Agricultural Bank of China Limited by Share Ltd Wuxi science and Technology Branch Pledgor: WST (Wuxi) Microelectronic Co., Ltd. Registration number: 2014990000636 |
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Date of cancellation: 20191017 Granted publication date: 20130918 Pledgee: Agricultural Bank of China Limited by Share Ltd Wuxi science and Technology Branch Pledgor: WST (Wuxi) Microelectronic Co., Ltd. Registration number: 2014990000636 |
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Effective date of registration: 20191120 Address after: No. 166, Zhengfang Middle Road, Jiangning Economic and Technological Development Zone, Nanjing, Jiangsu Province 210005 Patentee after: Nanjing GEC Electonics Co., Ltd. Address before: 903, building 21-1, genesis building, 214028 Changjiang Road, New District, Jiangsu, Wuxi Patentee before: WST (Wuxi) Microelectronic Co., Ltd. |
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CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 210016 No.166, zhengfangzhong Road, moling street, Jiangning District, Nanjing City, Jiangsu Province Patentee after: Nanjing Guobo Electronics Co.,Ltd. Address before: No.166, Zhengfang Road, Jiangning Economic and Technological Development Zone, Nanjing, Jiangsu, 210005 Patentee before: NANJING GUOBO ELECTRONICS Co.,Ltd. |