CN102496646A - Photovoltaic cell and preparation method thereof - Google Patents
Photovoltaic cell and preparation method thereof Download PDFInfo
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- CN102496646A CN102496646A CN2011104453312A CN201110445331A CN102496646A CN 102496646 A CN102496646 A CN 102496646A CN 2011104453312 A CN2011104453312 A CN 2011104453312A CN 201110445331 A CN201110445331 A CN 201110445331A CN 102496646 A CN102496646 A CN 102496646A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a photovoltaic cell and a preparation method thereof. The cell is formed by stacking of glass whose upper side is deposited with a conductive film, a function layer and a back electrode layer from the bottom up in order. The function layer comprises a P layer, an I layer and an N layer which are stacked in order from the bottom up. The P layer is in contact with the conductive film. The N layer contacts with the back electrode layer. The thickness of the back electrode layer is 1000 angstroms to 1500 angstroms. The material of the I layer is amorphous silicon-germanium with an energy gap of 1.3 ev to 1.8 ev. The material of the P layer is carbon-doped amorphous silicon with an energy gap of 1.7 ev to 1.9 ev. The thickness of the P layer is less than or equal to 100 angstroms. The energy gap of the N layer is 1.7 ev to 1.8 ev, and the thickness of the N layer is less than or equal to equal to 300 angstroms. The cell has good light absorption property and can fully absorb sunshine for power generation, and power generation efficiency is high. The preparation method of the cell comprises steps of depositing the P layer, the I layer, the N layer and the back electrode layer on the glass whose upper side s deposited with the conductive film respectively. The method has the advantages of simple technology, few usage devices and convenient industrialization popularization.
Description
Technical field
The present invention relates to a kind of battery, more particularly, the present invention relates to photovoltaic cell, simultaneously, the invention still further relates to a kind of preparation method of said photovoltaic cell.
Background technology
At present; Existing thin-film solar cells is generally amorphous silicon unijunction structure or amorphous silicon double junction structure; Because of there are the bigger defective of energy gap in amorphous silicon unijunction structure or amorphous silicon double junction structure; So the absorbing properties of existing thin-film solar cells is relatively poor, said battery can't fully absorb solar power generation, and generating efficiency is lower.
Summary of the invention
Technical problem to be solved by this invention provides photovoltaic cell, and its absorbing properties is preferable, can fully absorb solar power generation, and generating efficiency is higher; A kind of preparation method of this photovoltaic cell is provided simultaneously, and this method technology is simple, and use equipment is few, is convenient to industrialization promotion.
For solving the problems of the technologies described above, the invention provides photovoltaic cell, it is stacked gradually from bottom to top and is formed by glass, functional layer, the dorsum electrode layer that upside deposits conducting film; Functional layer comprises P layer, I layer, the N layer that stacks gradually layout from bottom to top; The P layer contacts with conducting film, and the N layer contacts with dorsum electrode layer, and the thickness of dorsum electrode layer is 1000 ~ 1500 dusts; It is characterized in that: the material of I layer is an amorphous germanium silicon, and its energy gap is 1.3 ~ 1.8 ev.
The material of said P layer is the carbon dope amorphous silicon, and its energy gap is 1.7 ~ 1.9 ev, and the thickness of P layer is less than or equal to 100 dusts.
The energy gap of said N layer is 1.7 ~ 1.8ev, and the thickness of N layer is less than or equal to 300 dusts.
The invention provides the preparation method of photovoltaic cell, this method comprises the steps:
1) the radio frequency plasma enhanced chemical vapor deposition processes deposition P layer that utilizes on glass that deposits conducting film at upside, the material of P layer is the carbon dope amorphous silicon, and its energy gap is 1.7 ~ 1.9 ev, and its thickness is less than or equal to 100 dusts;
2) utilize the radio frequency plasma enhanced chemical vapor deposition processes, 1) in the P layer on deposition I layer, the material of I layer is an amorphous germanium silicon, its energy gap is 1.7 ~ 1.8 ev;
3) utilize the radio frequency plasma enhanced chemical vapor deposition processes, 2) in the I layer on deposition N layer, the energy gap of N layer is 1.7 ~ 1.8 ev, the thickness of its N layer is less than or equal to 300 dusts;
4) utilize magnetron sputtering technique, 3) in the N layer on deposit dorsum electrode layer, the thickness of dorsum electrode layer is 1000 ~ 1500 dusts, obtains this photovoltaic cell.
For can concise description for the purpose of the problem, below photovoltaic cell according to the invention be all abbreviated as this battery.
After adopting above technical scheme, because of the material of I layer is an amorphous germanium silicon, its energy gap is 1.3 ~ 1.8 ev, so this battery becomes the very little amorphous silicon of energy gap/amorphous germanium silicon double junction structure, thereby reaches the purpose that reduces bandwidth, improves absorption sunlight long-wave band.
In sum, the absorbing properties of this battery is preferable, can fully absorb solar power generation, and generating efficiency is higher.The preparation method of this battery, this method technology is simple, and use equipment is few, is convenient to industrialization promotion.
Description of drawings
Fig. 1 is the structural representation of this battery.
Embodiment
Below will combine accompanying drawing and can further be well understood to the present invention through embodiment given below.But they are not to qualification of the present invention.
Referring to Fig. 1; This battery is stacked gradually from bottom to top and is formed by glass 1, functional layer, the dorsum electrode layer 3 that upside deposits conducting film 11; Functional layer comprises P layer 21, I layer 22, the N layer 23 that stacks gradually layout from bottom to top, and P layer 21 contacts with conducting film 11, and N layer 23 contacts with dorsum electrode layer 3.The material of P layer 21 is the carbon dope amorphous silicon, and its energy gap is 1.8ev, and the thickness of P layer 21 equals 100 dusts.The material of I layer 22 is an amorphous germanium silicon, and its energy gap is 1.6ev.The energy gap of N layer 23 is 1.7ev, and the thickness of N layer 23 equals 300 dusts.The thickness of dorsum electrode layer 3 is 1300 dusts, and dorsum electrode layer 3 adopts the aluminium film.
Referring to Fig. 1, the preparation method of photovoltaic cell, this method comprises the steps:
1) on upside deposits the glass 1 of conducting film 11, utilize radio frequency plasma enhanced chemical vapor deposition processes deposition P layer 21, the material of P layer 21 is the carbon dope amorphous silicon, and its energy gap is 1.8ev, and its thickness equals 100 dusts;
2) utilize the radio frequency plasma enhanced chemical vapor deposition processes, 1) in the P layer on deposition I layer 22, the material of I layer 22 is an amorphous germanium silicon, its energy gap is 1.6 ev;
3) utilize the radio frequency plasma enhanced chemical vapor deposition processes, 2) in I layer 22 on deposition N layer 23, the energy gap of N layer is 1.7 ev, the thickness of N layer 23 equals 300 dusts;
4) utilize magnetron sputtering technique, 3) in N layer 23 on the deposition dorsum electrode layer 3, the thickness of dorsum electrode layer 3 is 1300
Dust, dorsum electrode layer 3 adopts the aluminium film, obtains this photovoltaic cell.
The radio frequency plasma enhanced chemical vapor deposition processes is called for short RF-PECVD, and it is the same with magnetron sputtering technique, is the routine techniques part.
Above-described only is an embodiment of the invention.Should be pointed out that for the person of ordinary skill of the art under the prerequisite that does not break away from present principles, can also make some modification and improvement, these also should be regarded as belonging to protection scope of the present invention.As: dorsum electrode layer 3 also can adopt nickel aluminium.
Claims (4)
1. photovoltaic cell; The glass, functional layer, the dorsum electrode layer that are deposited conducting film by upside stack gradually from bottom to top and form, and functional layer comprises P layer, I layer, the N layer that stacks gradually layout from bottom to top, and the P layer contacts with conducting film; The N layer contacts with dorsum electrode layer; The thickness of dorsum electrode layer is 1000 ~ 1500 dusts, it is characterized in that: the material of I layer is an amorphous germanium silicon, and its energy gap is 1.3 ~ 1.8 ev.
2. photovoltaic cell according to claim 1 is characterized in that: the material of P layer is the carbon dope amorphous silicon, and its energy gap is 1.7 ~ 1.9 ev, and the thickness of P layer is less than or equal to 100 dusts.
3. photovoltaic cell according to claim 2 is characterized in that: the energy gap of N layer is 1.7 ~ 1.8ev, and the thickness of N layer is less than or equal to 300 dusts.
4. the preparation method of the said photovoltaic cell of claim 3, this method comprises the steps:
1) the radio frequency plasma enhanced chemical vapor deposition processes deposition P layer that utilizes on glass that deposits conducting film at upside, the material of P layer is the carbon dope amorphous silicon, and its energy gap is 1.7 ~ 1.9 ev, and its thickness is less than or equal to 100 dusts;
2) utilize the radio frequency plasma enhanced chemical vapor deposition processes, 1) in the P layer on deposition I layer, the material of I layer is an amorphous germanium silicon, its energy gap is 1.7 ~ 1.8 ev;
3) utilize the radio frequency plasma enhanced chemical vapor deposition processes, 2) in the I layer on deposition N layer, the energy gap of N layer is 1.7 ~ 1.8 ev, the thickness of its N layer is less than or equal to 300 dusts;
4) utilize magnetron sputtering technique, 3) in the N layer on deposit dorsum electrode layer, the thickness of dorsum electrode layer is 1000 ~ 1500 dusts, obtains this photovoltaic cell.
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| CN2011104453312A CN102496646A (en) | 2011-12-28 | 2011-12-28 | Photovoltaic cell and preparation method thereof |
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| CN2011104453312A CN102496646A (en) | 2011-12-28 | 2011-12-28 | Photovoltaic cell and preparation method thereof |
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| CN102496646A true CN102496646A (en) | 2012-06-13 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI659246B (en) * | 2017-06-12 | 2019-05-11 | 大陸商上海耕岩智能科技有限公司 | Image detection display device, device and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5252142A (en) * | 1990-11-22 | 1993-10-12 | Canon Kabushiki Kaisha | Pin junction photovoltaic element having an I-type semiconductor layer with a plurality of regions having different graded band gaps |
| US5324364A (en) * | 1992-04-15 | 1994-06-28 | Canon Kabushiki Kaisha | Pin junction photovoltaic device having an i-type a-SiGe semiconductor layer with a maximal point for the Ge content |
| US5429685A (en) * | 1992-11-16 | 1995-07-04 | Canon Kabushiki Kaisha | Photoelectric conversion element and power generation system using the same |
| CN101383385A (en) * | 2008-09-27 | 2009-03-11 | 中国科学院上海微系统与信息技术研究所 | Gap tunable triple thin-film solar cell and preparation thereof |
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2011
- 2011-12-28 CN CN2011104453312A patent/CN102496646A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5252142A (en) * | 1990-11-22 | 1993-10-12 | Canon Kabushiki Kaisha | Pin junction photovoltaic element having an I-type semiconductor layer with a plurality of regions having different graded band gaps |
| US5324364A (en) * | 1992-04-15 | 1994-06-28 | Canon Kabushiki Kaisha | Pin junction photovoltaic device having an i-type a-SiGe semiconductor layer with a maximal point for the Ge content |
| US5429685A (en) * | 1992-11-16 | 1995-07-04 | Canon Kabushiki Kaisha | Photoelectric conversion element and power generation system using the same |
| CN101383385A (en) * | 2008-09-27 | 2009-03-11 | 中国科学院上海微系统与信息技术研究所 | Gap tunable triple thin-film solar cell and preparation thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI659246B (en) * | 2017-06-12 | 2019-05-11 | 大陸商上海耕岩智能科技有限公司 | Image detection display device, device and preparation method thereof |
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Application publication date: 20120613 |