CN203325952U

CN203325952U - Two-sided passivated efficient heterojunction cell

Info

Publication number: CN203325952U
Application number: CN201320356596XU
Authority: CN
Inventors: 赵会娟; 张东升
Original assignee: GD SOLAR Co Ltd
Current assignee: GD SOLAR Co Ltd
Priority date: 2013-06-20
Filing date: 2013-06-20
Publication date: 2013-12-04
Anticipated expiration: 2023-06-20

Abstract

The utility model discloses a two-sided passivated efficient heterojunction cell. The two-sided passivated efficient heterojunction cell comprises a crystalline silicon base layer. An amorphous n layer, a positive passivated layer and a positive electrode are arranged on the front surface of the crystalline silicon base layer successively, a solar PN junction is formed by the amorphous n layer and the crystalline silicon base layer, and a back passivated layer, an intrinsic hydrogenated silicon thin film, a heavily doped hydrogenated silicon thin film, a transparent conducting film TCO and a back electrode are arranged on the rear surface of the crystalline silicon base layer successively. According to the cell, common advantages of a conditional crystalline silicon cell and a thin film cell are combined, the back surface composition is reduced, the open-circuit voltage is increased, long wave absorptivity is improved, the short-circuit current is increased, and the photoelectric conversion efficiency of the cell can be more than 20%.

Description

The efficient hetero-junction solar cell of a kind of passivation on double surfaces

Technical field

The utility model relates to a kind of heterojunction solar battery, particularly relates to the efficient hetero-junction solar cell of a kind of passivation on double surfaces, belongs to technical field of solar cell manufacturing.

Background technology

The current commercialization solar cell technological process of production is simple, and manufacturing cost is relatively cheap, is applicable to industrialization, automation, thereby is used widely.But this technique also has certain disadvantages, be mainly that technology is relatively simple, the solar cell transformation efficiency is lower.

With respect to traditional handicraft, each large research institution of the whole world has developed a series of conversion efficiencies and has surpassed 20% efficient crystal silicon solar battery, as PERL battery, PERC battery, PERT battery, OECO battery, LFC battery, MWT battery, EWT battery etc.They all adopt high-quality silicon substrate, perfect surperficial light trapping structure, good surface passivation technique and unique battery structure, these batteries are on the one hand owing to adopting high-quality silicon substrate to cause material cost very high, manufacture craft is very complicated on the other hand, very high to equipment requirement, so be difficult to mass production.

The utility model content

For above-mentioned the deficiencies in the prior art, it is lower that the purpose of this utility model is to provide a kind of cost, and technique simply is suitable for the efficient hetero-junction solar cell of passivation on double surfaces of volume production.

The technical solution of the utility model is such: the efficient hetero-junction solar cell of a kind of passivation on double surfaces, it is characterized in that: comprise crystal silicon basic unit, described crystal silicon basic unit front surface is provided with amorphous n layer, positive passivation layer and positive electrode successively, described amorphous n layer and crystal silicon basic unit form the solar energy PN junction, and described crystal silicon basic unit rear surface is provided with back of the body passivation layer, intrinsic silicon hydride thin film, heavy doping hydrogenated silicon film by utilizing, nesa coating TCO and back electrode successively.

In a specific embodiment of the present utility model, described positive passivation layer and back of the body passivation layer are the individual layer passivating film, and described positive passivation layer is silicon nitride film, and described back of the body passivation layer is a kind of in silicon nitride, silica, carborundum, amorphous silicon or microcrystalline silicon film.

In another specific embodiment of the present utility model, described positive passivation layer and back of the body passivation layer are the dual layer passivation film, described positive passivation layer is silicon nitride/silicon oxide film system, and described back of the body passivation layer is silicon nitride/silicon oxide film system or silicon nitride/Nano thin film system.

In another specific embodiment of the present utility model, described intrinsic silicon hydride thin film and heavy doping hydrogenated silicon film by utilizing are hydrogenation non crystal silicon film or microcrystalline hydrogenated silicon film.

Technical scheme provided by the utility model, by passivation technology, can provide the passivation that front surface is good for battery, can greatly reduce the battery surface reflectivity again; Can play passivation well for the battery rear surface, improve again back side internal reflection, make the rear surface recombination rate greatly reduce, increase the recycling of light.This battery combines the common advantage of traditional crystal silicon battery and hull cell, reduces back of the body surface recombination and improves open circuit voltage, increases the long wave absorption and improves short circuit current, can realize that the cell photoelectric transformation efficiency is more than 20%.

The accompanying drawing explanation

Fig. 1 is the utility model dual layer passivation membrane structure schematic diagram;

Fig. 2 is the utility model process drawing.

Embodiment

Below in conjunction with embodiment, the utility model is described in further detail, but not as to restriction of the present utility model.

Refer to Fig. 1, the efficient hetero-junction solar cell of passivation on double surfaces comprises crystal silicon basic unit 1, crystal silicon basic unit 1 front surface is provided with amorphous n layer 2, positive passivation layer 3 and positive electrode 7 successively, amorphous n layer 2 forms the solar energy PN junction with crystal silicon basic unit 1, and crystal silicon basic unit 1 rear surface is provided with back of the body passivation layer 4, intrinsic silicon hydride thin film 5, heavy doping hydrogenated silicon film by utilizing 6, nesa coating TCO8 and back electrode 9 successively.Positive passivation layer 3 and back of the body passivation layer 4 can be that the individual layer passivation film structure can be also the dual layer passivation membrane structure.For the individual layer passivating film, the positive passivation layer of front surface 3 adopts silicon nitride films, and the back of the body passivation layer 4 of rear surface can adopt a kind of in silicon nitride, silica, carborundum, amorphous silicon or microcrystalline silicon film.For the dual layer passivation film, the positive passivation layer 3 of front surface adopts silicon nitride/silicon oxide film system, and the back of the body passivation layer 4 of rear surface can adopt silicon nitride/silicon oxide film system or silicon nitride/Nano thin film system.Intrinsic silicon hydride thin film 5 and heavy doping hydrogenated silicon film by utilizing 6 are hydrogenation non crystal silicon film or microcrystalline hydrogenated silicon film.

The efficient hetero-junction solar cell of manufacture two-sided double-deck passivation of take is example, this manufacture method is to adopt chemical corrosion to remove the positive and negative surface damage layer of crystal silicon chip, prepare suede structure and spread front prerinse, then adopt conventional diffusion technique to carry out phosphorus and diffuse to form the solar cell PN junction and remove edge and back of the body knot; Crystal silicon is carried out to the two-sided double-deck passivation, adopt thermal oxidation, magnetron sputtering or PECVD technology two surfaces before and after silicon chip to form the dual layer passivation film, positive passivation layer adopts silicon nitride/silicon oxide film system, and the back of the body passivation layer of rear surface adopts silicon nitride/silicon oxide film system or silicon nitride/Nano thin film system; Pass through overleaf subsequently low temperature (250 ℃) PECVD technology deposition intrinsic hydrogenated silicon film by utilizing and heavy doping hydrogenated silicon film by utilizing overleaf; Electrode sintering before silk screen printing again; After sintering, adopt magnetron sputtering (PVD) technology deposition of transparent conductive film TCO and back electrode overleaf.

Claims

1. the efficient hetero-junction solar cell of passivation on double surfaces, it is characterized in that: comprise crystal silicon basic unit (1), described crystal silicon basic unit (1) front surface is provided with amorphous n layer (2), positive passivation layer (3) and positive electrode (7) successively, described amorphous n layer (2) forms the solar energy PN junction with crystal silicon basic unit (1), and described crystal silicon basic unit (1) rear surface is provided with back of the body passivation layer (4), intrinsic silicon hydride thin film (5), heavy doping hydrogenated silicon film by utilizing (6), nesa coating TCO (8) and back electrode (9) successively.

2. the efficient hetero-junction solar cell of passivation on double surfaces according to claim 1, it is characterized in that: described positive passivation layer (3) and back of the body passivation layer (4) are the individual layer passivating film, described positive passivation layer (3) is silicon nitride film, and described back of the body passivation layer (4) is a kind of in silicon nitride, silica, carborundum, amorphous silicon or microcrystalline silicon film.。

3. the efficient hetero-junction solar cell of passivation on double surfaces according to claim 1, it is characterized in that: described positive passivation layer (3) and back of the body passivation layer (4) are the dual layer passivation film, described positive passivation layer (3) is silicon nitride/silicon oxide film system, and described back of the body passivation layer (4) is silicon nitride/silicon oxide film system or silicon nitride/Nano thin film system.

4. the efficient hetero-junction solar cell of passivation on double surfaces according to claim 1, it is characterized in that: described intrinsic silicon hydride thin film (5) and heavy doping hydrogenated silicon film by utilizing (6) are hydrogenation non crystal silicon film or microcrystalline hydrogenated silicon film.