CN102487037A - 缓冲高温工艺中薄膜局部应力释放的方法 - Google Patents
缓冲高温工艺中薄膜局部应力释放的方法 Download PDFInfo
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CN2010105708371A CN102487037A (zh) | 2010-12-02 | 2010-12-02 | 缓冲高温工艺中薄膜局部应力释放的方法 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111551775A (zh) * | 2020-06-16 | 2020-08-18 | 新纳传感系统有限公司 | 一种电流传感器的制造方法 |
WO2023231187A1 (zh) * | 2022-06-02 | 2023-12-07 | 长鑫存储技术有限公司 | 半导体结构的制造方法 |
CN117737686A (zh) * | 2024-01-31 | 2024-03-22 | 湖南德智新材料有限公司 | 石墨产品的膜层制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62115755A (ja) * | 1985-11-14 | 1987-05-27 | Mitsubishi Electric Corp | 半導体装置 |
US20080164530A1 (en) * | 2007-01-04 | 2008-07-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuits with stress memory effect and fabrication methods thereof |
US20080303101A1 (en) * | 2007-06-05 | 2008-12-11 | International Business Machines Corporation | Dual stress memorization technique for cmos application |
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2010
- 2010-12-02 CN CN2010105708371A patent/CN102487037A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62115755A (ja) * | 1985-11-14 | 1987-05-27 | Mitsubishi Electric Corp | 半導体装置 |
US20080164530A1 (en) * | 2007-01-04 | 2008-07-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated circuits with stress memory effect and fabrication methods thereof |
US20080303101A1 (en) * | 2007-06-05 | 2008-12-11 | International Business Machines Corporation | Dual stress memorization technique for cmos application |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111551775A (zh) * | 2020-06-16 | 2020-08-18 | 新纳传感系统有限公司 | 一种电流传感器的制造方法 |
WO2023231187A1 (zh) * | 2022-06-02 | 2023-12-07 | 长鑫存储技术有限公司 | 半导体结构的制造方法 |
CN117737686A (zh) * | 2024-01-31 | 2024-03-22 | 湖南德智新材料有限公司 | 石墨产品的膜层制备方法 |
CN117737686B (zh) * | 2024-01-31 | 2024-07-12 | 湖南德智新材料有限公司 | 石墨产品的膜层制备方法 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140116 |
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Effective date of registration: 20140116 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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Application publication date: 20120606 |