CN102484132B - 隧道场效应器件 - Google Patents

隧道场效应器件 Download PDF

Info

Publication number
CN102484132B
CN102484132B CN201080038343.7A CN201080038343A CN102484132B CN 102484132 B CN102484132 B CN 102484132B CN 201080038343 A CN201080038343 A CN 201080038343A CN 102484132 B CN102484132 B CN 102484132B
Authority
CN
China
Prior art keywords
semi
conducting material
epitheca
core parts
induction tunnel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201080038343.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN102484132A (zh
Inventor
M·T·比约克
S·F·卡格
J·克诺赫
H·E·里埃尔
W·H·里斯
P·M·所罗门
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Core Usa Second LLC
GlobalFoundries Inc
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of CN102484132A publication Critical patent/CN102484132A/zh
Application granted granted Critical
Publication of CN102484132B publication Critical patent/CN102484132B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Bipolar Transistors (AREA)
  • Thin Film Transistor (AREA)
CN201080038343.7A 2009-08-31 2010-08-30 隧道场效应器件 Active CN102484132B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/550,857 2009-08-31
US12/550,857 US8288803B2 (en) 2009-08-31 2009-08-31 Tunnel field effect devices
PCT/IB2010/053884 WO2011024152A1 (en) 2009-08-31 2010-08-30 Tunnel field effect devices

Publications (2)

Publication Number Publication Date
CN102484132A CN102484132A (zh) 2012-05-30
CN102484132B true CN102484132B (zh) 2014-07-30

Family

ID=43127353

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080038343.7A Active CN102484132B (zh) 2009-08-31 2010-08-30 隧道场效应器件

Country Status (7)

Country Link
US (1) US8288803B2 (https=)
JP (1) JP5501463B2 (https=)
CN (1) CN102484132B (https=)
DE (1) DE112010003495B4 (https=)
GB (1) GB2485495B (https=)
TW (1) TWI463653B (https=)
WO (1) WO2011024152A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8890120B2 (en) 2012-11-16 2014-11-18 Intel Corporation Tunneling field effect transistors (TFETs) for CMOS approaches to fabricating N-type and P-type TFETs
EP3050111A4 (en) * 2013-09-27 2017-06-07 Intel Corporation Improved cladding layer epitaxy via template engineering for heterogeneous integration on silicon
GB2518679A (en) * 2013-09-30 2015-04-01 Ibm Reconfigurable tunnel field-effect transistors
KR102157825B1 (ko) 2014-01-16 2020-09-18 삼성전자주식회사 터널링 전계 효과 트랜지스터
CN104835840B (zh) * 2015-03-24 2017-09-19 北京大学 超陡平均亚阈摆幅纳米线隧穿场效应晶体管及制备方法
US10026830B2 (en) 2015-04-29 2018-07-17 Stmicroelectronics, Inc. Tunneling field effect transistor (TFET) having a semiconductor fin structure
JP6159777B2 (ja) * 2015-10-28 2017-07-05 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
JP6375316B2 (ja) * 2016-01-06 2018-08-15 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
JP6080989B2 (ja) * 2016-01-06 2017-02-15 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
JP6114434B2 (ja) * 2016-04-21 2017-04-12 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置
CN108369960A (zh) * 2016-04-22 2018-08-03 华为技术有限公司 隧穿场效应晶体管及其制造方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1675778A (zh) * 2002-08-12 2005-09-28 艾康技术公司 具有到沟道的钝化肖特基势垒的绝缘栅场效应晶体管
US20070052012A1 (en) * 2005-08-24 2007-03-08 Micron Technology, Inc. Vertical tunneling nano-wire transistor
CN101065811A (zh) * 2004-05-25 2007-10-31 国际商业机器公司 制造隧穿纳米管场效应晶体管的方法
EP1901355A1 (en) * 2006-09-15 2008-03-19 Interuniversitair Microelektronica Centrum Tunnel effect transistors based on elongate monocrystalline nanostructures having a heterostructure
US20080067495A1 (en) * 2006-09-15 2008-03-20 Interuniversitair Microelektronica Centrum (Imec) Tunnel effect transistors based on silicon nanowires
US7465976B2 (en) * 2005-05-13 2008-12-16 Intel Corporation Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions
US20090034355A1 (en) * 2007-07-30 2009-02-05 Qimonda Ag Integrated circuit including memory cells with tunnel fet as selection transistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8120115B2 (en) * 2007-03-12 2012-02-21 Imec Tunnel field-effect transistor with gated tunnel barrier

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1675778A (zh) * 2002-08-12 2005-09-28 艾康技术公司 具有到沟道的钝化肖特基势垒的绝缘栅场效应晶体管
CN101065811A (zh) * 2004-05-25 2007-10-31 国际商业机器公司 制造隧穿纳米管场效应晶体管的方法
US7465976B2 (en) * 2005-05-13 2008-12-16 Intel Corporation Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions
US20070052012A1 (en) * 2005-08-24 2007-03-08 Micron Technology, Inc. Vertical tunneling nano-wire transistor
EP1901355A1 (en) * 2006-09-15 2008-03-19 Interuniversitair Microelektronica Centrum Tunnel effect transistors based on elongate monocrystalline nanostructures having a heterostructure
US20080067495A1 (en) * 2006-09-15 2008-03-20 Interuniversitair Microelektronica Centrum (Imec) Tunnel effect transistors based on silicon nanowires
US20090034355A1 (en) * 2007-07-30 2009-02-05 Qimonda Ag Integrated circuit including memory cells with tunnel fet as selection transistor

Also Published As

Publication number Publication date
DE112010003495T5 (de) 2012-09-20
GB2485495A (en) 2012-05-16
US8288803B2 (en) 2012-10-16
TW201133837A (en) 2011-10-01
WO2011024152A1 (en) 2011-03-03
GB201200880D0 (en) 2012-02-29
DE112010003495B4 (de) 2013-12-12
TWI463653B (zh) 2014-12-01
JP2013503471A (ja) 2013-01-31
CN102484132A (zh) 2012-05-30
US20110049474A1 (en) 2011-03-03
JP5501463B2 (ja) 2014-05-21
GB2485495B (en) 2013-10-30

Similar Documents

Publication Publication Date Title
CN102484132B (zh) 隧道场效应器件
US8193524B2 (en) Nanoelectronic device
US8772877B2 (en) Tunnel field-effect transistor
Ghosh et al. A junctionless tunnel field effect transistor with low subthreshold slope
CN104465657B (zh) 互补tfet 及其制造方法
EP2887398A1 (en) A bilayer graphene tunneling field effect transistor
US20130264544A1 (en) Nanowire field-effect device with multiple gates
US20110018065A1 (en) Method for manufacturing semiconductor device and semiconductor device
Singh et al. Improved DC performances of gate-all-around si-nanotube tunnel FETs using gate-source overlap
Jain et al. Controlling L-BTBT in emerging nanotube FETs using dual-material gate
CN110828564B (zh) 具有半导体性栅极的场效应晶体管
CN104201195B (zh) 一种无结场效应晶体管及其制备方法
CN104201205B (zh) 一种芯‑壳场效应晶体管及其制备方法
CN110574168A (zh) 垂直金属氧化物半导体场效应晶体管(mosfet)及其形成的方法
US10658460B2 (en) Semi-metal tunnel field effect transistor
EP3010044B1 (en) Layered structure of a p-TFET
CN104157687B (zh) 一种垂直环栅隧穿晶体管及其制备方法
KR102273935B1 (ko) 음성 트랜스 컨덕턴스 기반의 터널링 트랜지스터
KR102608554B1 (ko) 상보형 스위치 소자
CN104241334A (zh) 无结晶体管
CN117012836A (zh) 一种纵向氧化镓mosfet器件及其制备方法
CN104134701A (zh) 一种杂质分凝肖特基源漏器件及其制备方法
TW201742126A (zh) 環閘極ｉｉｉ－ｖ族量子井電晶體及鍺無接面電晶體及其製造方法
CN108054209B (zh) 场效应晶体管、制造场效应晶体管的方法及电子器件
KR102451562B1 (ko) 터널링 전계 효과 트랜지스터 및 이를 포함하는 반도체 장치

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20171030

Address after: Grand Cayman, Cayman Islands

Patentee after: GLOBALFOUNDRIES INC.

Address before: American New York

Patentee before: Core USA second LLC

Effective date of registration: 20171030

Address after: American New York

Patentee after: Core USA second LLC

Address before: American New York

Patentee before: International Business Machines Corp.

TR01 Transfer of patent right