CN102479772A - 用于监控源漏多晶硅刻蚀的测试结构 - Google Patents
用于监控源漏多晶硅刻蚀的测试结构 Download PDFInfo
- Publication number
- CN102479772A CN102479772A CN2010105655849A CN201010565584A CN102479772A CN 102479772 A CN102479772 A CN 102479772A CN 2010105655849 A CN2010105655849 A CN 2010105655849A CN 201010565584 A CN201010565584 A CN 201010565584A CN 102479772 A CN102479772 A CN 102479772A
- Authority
- CN
- China
- Prior art keywords
- source
- polycrystalline silicon
- drain area
- polysilicon
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201010565584 CN102479772B (zh) | 2010-11-30 | 2010-11-30 | 用于监控源漏多晶硅刻蚀的测试结构 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201010565584 CN102479772B (zh) | 2010-11-30 | 2010-11-30 | 用于监控源漏多晶硅刻蚀的测试结构 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102479772A true CN102479772A (zh) | 2012-05-30 |
CN102479772B CN102479772B (zh) | 2013-09-11 |
Family
ID=46092337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 201010565584 Active CN102479772B (zh) | 2010-11-30 | 2010-11-30 | 用于监控源漏多晶硅刻蚀的测试结构 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102479772B (zh) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103887283A (zh) * | 2014-03-27 | 2014-06-25 | 上海华力微电子有限公司 | 多晶硅残留监测结构 |
CN103943608A (zh) * | 2014-02-21 | 2014-07-23 | 上海华力微电子有限公司 | 一种检测多晶硅残留的测试结构 |
CN106847791A (zh) * | 2017-01-04 | 2017-06-13 | 上海华虹宏力半导体制造有限公司 | 监控基区宽度的测试结构 |
CN109659297A (zh) * | 2018-12-19 | 2019-04-19 | 上海华力集成电路制造有限公司 | 闪存控制栅极板间电容的晶圆允收测试图形 |
CN113192931A (zh) * | 2021-04-27 | 2021-07-30 | 上海华虹宏力半导体制造有限公司 | 残留多晶硅监测结构、结构版图、方法及半导体器件 |
US20230009090A1 (en) * | 2021-07-12 | 2023-01-12 | Changxin Memory Technologies, Inc. | Semiconductor device layout structure and method of forming semiconductor device |
WO2023159805A1 (zh) * | 2022-02-28 | 2023-08-31 | 长鑫存储技术有限公司 | 半导体结构版图及半导体结构 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5670891A (en) * | 1995-06-07 | 1997-09-23 | Advanced Micro Devices, Inc. | Structures to extract defect size information of poly and source-drain semiconductor devices and method for making the same |
CN1687698A (zh) * | 2005-05-13 | 2005-10-26 | 东南大学 | 多晶硅薄膜残余应变的在线检测结构及检测方法 |
US20060121631A1 (en) * | 2002-12-20 | 2006-06-08 | Koninklijke Philips Electronics N.V. | Method of producing semiconductor elements using a test structure |
CN101304020A (zh) * | 2007-05-11 | 2008-11-12 | 中芯国际集成电路制造(上海)有限公司 | 一种用于检测芯片制成缺陷的测试机构及其制作方法 |
US20090166619A1 (en) * | 2007-12-26 | 2009-07-02 | Dongbu Hitek Co., Ltd. | Test pattern of semiconductor device and manufacturing method thereof |
-
2010
- 2010-11-30 CN CN 201010565584 patent/CN102479772B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5670891A (en) * | 1995-06-07 | 1997-09-23 | Advanced Micro Devices, Inc. | Structures to extract defect size information of poly and source-drain semiconductor devices and method for making the same |
US20060121631A1 (en) * | 2002-12-20 | 2006-06-08 | Koninklijke Philips Electronics N.V. | Method of producing semiconductor elements using a test structure |
CN1687698A (zh) * | 2005-05-13 | 2005-10-26 | 东南大学 | 多晶硅薄膜残余应变的在线检测结构及检测方法 |
CN101304020A (zh) * | 2007-05-11 | 2008-11-12 | 中芯国际集成电路制造(上海)有限公司 | 一种用于检测芯片制成缺陷的测试机构及其制作方法 |
US20090166619A1 (en) * | 2007-12-26 | 2009-07-02 | Dongbu Hitek Co., Ltd. | Test pattern of semiconductor device and manufacturing method thereof |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103943608A (zh) * | 2014-02-21 | 2014-07-23 | 上海华力微电子有限公司 | 一种检测多晶硅残留的测试结构 |
CN103943608B (zh) * | 2014-02-21 | 2016-06-08 | 上海华力微电子有限公司 | 一种检测多晶硅残留的测试结构 |
CN103887283A (zh) * | 2014-03-27 | 2014-06-25 | 上海华力微电子有限公司 | 多晶硅残留监测结构 |
CN103887283B (zh) * | 2014-03-27 | 2017-04-05 | 上海华力微电子有限公司 | 多晶硅残留监测结构 |
CN106847791A (zh) * | 2017-01-04 | 2017-06-13 | 上海华虹宏力半导体制造有限公司 | 监控基区宽度的测试结构 |
CN106847791B (zh) * | 2017-01-04 | 2019-06-11 | 上海华虹宏力半导体制造有限公司 | 监控基区宽度的测试结构 |
CN109659297A (zh) * | 2018-12-19 | 2019-04-19 | 上海华力集成电路制造有限公司 | 闪存控制栅极板间电容的晶圆允收测试图形 |
CN109659297B (zh) * | 2018-12-19 | 2020-06-16 | 上海华力集成电路制造有限公司 | 闪存控制栅极板间电容的晶圆允收测试图形 |
CN113192931A (zh) * | 2021-04-27 | 2021-07-30 | 上海华虹宏力半导体制造有限公司 | 残留多晶硅监测结构、结构版图、方法及半导体器件 |
CN113192931B (zh) * | 2021-04-27 | 2024-04-16 | 上海华虹宏力半导体制造有限公司 | 残留多晶硅监测结构、结构版图、方法及半导体器件 |
US20230009090A1 (en) * | 2021-07-12 | 2023-01-12 | Changxin Memory Technologies, Inc. | Semiconductor device layout structure and method of forming semiconductor device |
WO2023159805A1 (zh) * | 2022-02-28 | 2023-08-31 | 长鑫存储技术有限公司 | 半导体结构版图及半导体结构 |
Also Published As
Publication number | Publication date |
---|---|
CN102479772B (zh) | 2013-09-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102479772B (zh) | 用于监控源漏多晶硅刻蚀的测试结构 | |
CN102157496B (zh) | 接触孔测试装置和有源区接触孔对栅极的漏电流测试方法 | |
CN101777556B (zh) | 一种沟槽型大功率mos器件及其制造方法 | |
US8330254B2 (en) | Semiconductor device | |
CN101395719A (zh) | 用于功率器件的沟道场板末端 | |
US20180061980A1 (en) | Semiconductor device | |
CN101853854B (zh) | 一种改进型终端结构的沟槽功率mos器件 | |
CN104091831A (zh) | 一种薄膜晶体管、阵列基板和显示装置 | |
KR101330084B1 (ko) | 반도체 장치의 테스트 구조물, 그 형성 방법, 반도체 장치및 이의 제조 방법 | |
CN201611658U (zh) | 一种深沟槽功率mos器件 | |
CN102110586B (zh) | 监测半导体衬底中硅损伤的方法 | |
CN107346752B (zh) | 半导体测试结构及其形成方法以及测试方法 | |
CN103887283A (zh) | 多晶硅残留监测结构 | |
CN103943608B (zh) | 一种检测多晶硅残留的测试结构 | |
CN103137605B (zh) | 监控源漏多晶和管侧墙间寄生电容的测试结构及制造方法 | |
CN101750563A (zh) | 半导体器件中通孔或接触孔短路检测结构 | |
CN101692425B (zh) | 一种esd保护的设计方法 | |
CN110854113B (zh) | 静电防护结构、制造方法以及阵列基板母板 | |
CN108037131B (zh) | 一种对插塞缺陷进行检测的方法 | |
JP4876440B2 (ja) | 半導体装置 | |
CN1983630A (zh) | Mos场效应管及其制作方法 | |
CN201655808U (zh) | 一种沟槽型大功率mos器件 | |
WO2023079814A1 (ja) | 半導体装置 | |
CN201708155U (zh) | 一种改进型终端结构的沟槽功率mos器件 | |
CN109671766B (zh) | 功率金属氧化物半导体场效晶体管 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131225 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
TR01 | Transfer of patent right |
Effective date of registration: 20131225 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |