CN102456538B - Method for unsealing plastically-packaged apparatus containing un-passivated metal layer structure - Google Patents
Method for unsealing plastically-packaged apparatus containing un-passivated metal layer structure Download PDFInfo
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- CN102456538B CN102456538B CN201010527075.7A CN201010527075A CN102456538B CN 102456538 B CN102456538 B CN 102456538B CN 201010527075 A CN201010527075 A CN 201010527075A CN 102456538 B CN102456538 B CN 102456538B
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Abstract
The invention diswcloses a method for unsealing a plastically-packaged apparatus containing an un-passivated metal layer structure, comprising the following steps of: firstly, etching the plastically-packaged apparatus for 5-10 seconds in an environment at 80-90 DEG C by fuming nitric acid, starting to perform a cleaning process in 30 seconds, cleaning the etched apparatus by acetone and deionized water, and then drying in air; secondly, etching the plastically-packaged apparatus for 10-20 seconds in an environment at 70-80 DEG C by an etching acid I formed by mixing fuming nitric acid with 98% concentrated sulphuric acid in a volume ratio of 2: 1, and immediately cleaning the apparatus by acetone, isopropyl ketone and deionized water after etching; and lastly, drying in air. The plastically-packaged semiconductor integrated circuit with a chip surface made of nickel-copper, nickel-tungsten and the like and produced by a structure which is not protected by a passivation layer is unsealed by a method of precisely controlling unsealing technique parameters and performing an etching process twice, the interior structure of the apparatus can be completely reserved after the apparatus is unsealed, and the apparatus is ensured to be able to keep electrical performance after being unsealed, so that the demand on the integrity of the apparatus by the follow-up inspections of destructive physical analysis, failure analysis and the like is completely satisfied.
Description
[technical field]
The present invention relates to electronic devices and components Kaifeng technical field, relate in particular to a kind of not opening method of the plastic device of passivated metal layer structure that contains.
[background technology]
The ambrose alloy of the chip surface of some device employing at present etc. is not subject to the process structure of passivation layer protection; the plastic packaged integrated circuit of this special construction is common in the power management (abbreviation: TPS), in serial epoxy seal semiconductor device and some magnetic isolating devices, the application of these devices in each field is at present very extensive that TIX's (being called for short TI company) design is produced.In order to check the performance index of plastic device; generally all can break a seal to plastic device; the Kaifeng of present stage plastic device (as epoxy seal semiconductor integrated circuit), adopt nitric acid wet method to break a seal; though the method efficiency simple to operate is high; FA) etc. but utilize this opening method to tend to make device inside be not subject to the structural failure of passivation layer protection and make product device lose its function, the physical analysis of damaging property (is called for short: DPA) (be called for short: subsequent survey cannot be proceeded with failure analysis.
[summary of the invention]
The object of the invention is in order to overcome the deficiencies in the prior art, provide a kind of containing the opening method of the plastic device of passivated metal layer structure not, it has the advantages that Kaifeng efficiency is high, cost is low, and original performance that can retainer member behind Kaifeng.
Provided by the invention containing the opening method of the plastic device of passivated metal layer structure not, under the environment of 70 ℃-80 ℃, utilize one etching plastic device 10-20 second of etching acid, this etching acid one is made up of by volume ratio mixing in 2: 1 fuming nitric aicd and 98% concentrated sulfuric acid; After etching acid one etching plastic device, immediately device is cleaned up, concrete cleaning process is: adopt acetone to clean 2 times, each scavenging period 1 minute; Clean 1 minute with isopropyl alcohol again, then use washed with de-ionized water 2 minutes, finally air-dry in air.
Wherein, before etching acid one etching, also need to carry out etching for the first time and clean for the first time, be specially: utilize fuming nitric aicd etching plastic device 5-10 second under the environment of 80 ℃-90 ℃, and in 30 seconds, start to carry out cleaning process, to remove the unnecessary acid solution of device surface.
Wherein, described cleaning process is for the first time: first adopt acetone to clean 1 minute, then use washed with de-ionized water 2 minutes, and finally air-dry in air.
Wherein, described etching acid one etching plastic device time under 75 ℃ of temperature environments is 10 seconds.
Wherein, before Kaifeng, first device is carried out to X-ray examination or ultrasonic scanning inspection, obtain device inside chip size, position and depth information, according to the consumption of these Information Selection etching acid one and fuming nitric aicd, time of contact, the consumption of cleaning fluid and scavenging period.
Wherein, etching acid one flow is selected 1 ml/min, touches the device beginning timing that is as the criterion with etching acid one, and be 10-20 second the time of contact of device and etching acid one.
Wherein, the fuming nitric aicd flow that etching is used is selected 1 ml/min, touches the device beginning timing that is as the criterion with fuming nitric aicd, and device contacts 5-10 second with fuming nitric aicd.
Wherein, described opening method can adopt automatic mail opener to break a seal or break a seal manually.
The present invention compared with prior art, has the following advantages:
The present invention adopts accurate control Kaifeng technological parameter (being mainly proportioning and the temperature of etching acid one); and adopt twice etching process to adopt ambrose alloy, nickel tungsten etc. not broken a seal by the plastic device (as semiconductor integrated circuit) of the process structure of passivation layer protection to chip surface; the internal structure of reservation device that can be complete behind Kaifeng; guarantee that device can also keep its electrical property behind Kaifeng, meet the requirement of the subsequent survey such as Destructive Physical Analysis and failure analysis to device integrity completely.
[accompanying drawing explanation]
Fig. 1 is the not opening method schematic flow sheet of the plastic device of passivated metal layer structure that contains of the embodiment of the present invention;
Fig. 2 contains the not X-ray examination design sketch of the plastic device of passivated metal layer structure in the embodiment of the present invention;
Fig. 3 contains the not design sketch of the plastic device of passivated metal layer structure after etching for the first time in the embodiment of the present invention;
Fig. 4 contains the not design sketch of the plastic device of passivated metal layer structure after etching for the second time in the embodiment of the present invention;
Fig. 5 contains the not rear chip surface pattern schematic diagram in plastic device Kaifeng of passivated metal layer structure behind the inventive method Kaifeng;
Fig. 6 is the not plastic device chip surface pattern schematic diagram of passivated metal layer structure that contains adopting behind art methods Kaifeng.
[embodiment]
Technological means and effect of taking for reaching predetermined object for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, to the not opening method of the plastic device of passivated metal layer structure that contains proposing according to the present invention, its embodiment, structure, feature and effect thereof, illustrate as after.
The not opening method of the plastic device of passivated metal layer structure that contains provided by the invention, it is the opening method based on containing the Destructive Physical Analysis of the epoxy seal semiconductor device of passivated metal layer structure (DPA) not and failure analysis (FA), be specially and under the environment of 70 ℃-80 ℃, utilize one etching plastic device 10-20 second of etching acid, this etching acid one is made up of by the volume ratio mixing of 2: 1 concentrated sulfuric acid of fuming nitric aicd and 98%.As better with the meeting of fuming nitric aicd etch effect before etching acid one etching, be specially: first utilize fuming nitric aicd etching plastic device 5-10 second under the environment of 80 ℃-90 ℃, and in 30 seconds, start to carry out cleaning process, device after etching is cleaned up, to remove the acid solution of device surface, this cleaning process can adopt acetone to clean 1 minute, then uses washed with de-ionized water 2 minutes, finally air-dry in air; Clean and later can carry out etching for the second time: under the environment of 70 ℃-80 ℃, utilize one etching plastic device 10-20 second of etching acid; After etching, should immediately device be cleaned up for the second time, to remove the acid solution of device surface, concrete cleaning process is: adopt acetone to clean 2 times, each scavenging period 1 minute; Clean 1 minute with isopropyl alcohol again, then use washed with de-ionized water 2 minutes, finally air-dry in air, the use of can testing of the device after air-dry.
The inventive method is the etching to chip of the three aspect factor reduction time of contact etching solution that utilizes the passivation of the concentrated sulfuric acid, adopt lower temperature the activity of solution (reduce etching solution temperature can change) and reduce etching solution and chip as far as possible.As shown in Figure 1, below utilize automatic mail opener to describe the detailed process in Kaifeng for example, before Kaifeng, first device is carried out to X-ray examination or ultrasonic scanning inspection, X ray pattern as shown in Figure 2, obtain device inside chip size, position and depth information, according to the consumption of these Information Selection etching acid, time of contact, the consumption of cleaning fluid and scavenging period; And adopt twice etching method, the effect that makes to break a seal can be better, etching solution and device contacts can be more even and coming out of making that chip can be more complete.
Automatically mail opener Kaifeng is as follows containing the detailed process of the plastic device of passivated metal layer structure not:
Etched object is the moulding material on removal devices surface as much as possible for the first time, but does not expose chip.Etching for the first time adopts fuming nitric aicd etching, temperature adopts 80 ℃-90 ℃, etching fuming nitric aicd flow is selected 1 ml/min, touch the device beginning timing that is as the criterion with fuming nitric aicd, device contacts 5-10 second with fuming nitric aicd, be encapsulated as routine optimal time as 5 seconds take TSSOP-20 (the little profile of the ultra-thin scaled-down version of 20 pin).Etching for the first time makes just to expose bonding wire but do not expose chip containing the plastic device of passivated metal layer structure not, is illustrated in figure 3 in the embodiment of the present invention after etching for the first time containing the design sketch of the plastic device of passivated metal layer structure not.
After etching for the first time completes, should in 30 seconds, start to carry out cleaning process, the device after etching is cleaned up, to remove the unnecessary acid solution of device surface.Be encapsulated as example with TS SOP-20, its cleaning process is: first adopt at least 50ml acetone to clean 1 minute, then use at least 300ml washed with de-ionized water 2 minutes, and finally air-dry in air.Clean and can carry out etching for the second time later.
Etched object is by exposure complete chip but does not damage the structure that chip surface is not protected by passivation layer for the second time.The only moulding material of surplus thin layer of chip surface after etching for the first time, thereby can make etching solution for the second time reduce more greatly the chip and etching one time contacting of acid of device for the second time with the contact-making surface of device, thereby avoid the unnecessary etching of chip.It is that etching is carried out in the etching acid one that mixes composition at 2: 1 with 98% the concentrated sulfuric acid according to volume ratio that etching for the second time adopts fuming nitric aicd, temperature adopts 70 ℃-80 ℃, can cause unnecessary etching to chip on the contrary time of contact if adopt lower temperature can increase, optimal etch temperature is 75 ℃.Etching acid one flow is selected 1 ml/min, touches the device beginning timing that is as the criterion with etching acid one, and be 10-20 second the time of contact of device and etching acid one, is encapsulated as routine optimal time as 10 seconds take TSSOP-20.Etch effect as shown in Figure 4, etches away the moulding material of the chip surface in Fig. 3 for the second time, makes complete the coming out of chip.
Etching process should clean up device after completing immediately for the second time, to remove the unnecessary acid solution of device surface.Being encapsulated as routine cleaning process with TSSOP-20 can adopt at least 50ml acetone to clean 2 times, each scavenging period is 1 minute, again with isopropyl alcohol at least 50ml clean 1 minute, then use at least 300ml washed with de-ionized water 2 minutes, order is carried out cleaning process for the second time according to this, finally air-dry in air, plastic device can drop into check use after air-dry.
Opening method provided by the invention is different from now methodical key and is the control (comprising the proportioning of etching acid and the temperature of etching solution) to etching solution, and adopt twice etching process to shorten the time of contact of chip and etching solution, in the structure short time that makes device chip surface not protected by passivation layer, there is not etching, thereby retained the electrical property of device; After being illustrated in figure 5 the inventive method Kaifeng, contain the not rear chip surface pattern schematic diagram in plastic device Kaifeng of passivated metal layer structure; can obviously see that the structure that adopts opening method provided by the invention Kaifeng its chip surface of device not to be subject to passivation layer protection (as the bonding jumper of 3 of A1, B1, C1) is not subject to etching and damages, intact through electric performance test device function.And conventional method generally all adopts the limiting temperature of single fuming nitric aicd solution to break a seal in order to raise the efficiency, chip surface is not subject to the structure of passivation layer protection to react rapidly and to dissolve with nitric acid, makes the device forfeiture electrical property that is damaged, thus damage device; Be illustrated in figure 6 the not plastic device chip surface pattern schematic diagram of passivated metal layer structure that contains adopting behind art methods Kaifeng; can see Kaifeng device surface not to be subject to the structure of passivation layer protection can be subject to serious etching and damage (as the bonding jumper of 3 of A2, B2, C2 has been subjected to serious etching), device function is lost.
If there is no automatic Kaifeng equipment, can also adopt manual method Kaifeng according to method step provided by the present invention and technological parameter.Manual Kaifeng should adopt Kaifeng method twice, Kaifeng can adopt wet method Kaifeng for the first time, or also can adopt grinding and polishing method to remove device surface moulding material, behind Kaifeng, should guarantee only surplus thin layer moulding material of device chip surface for the first time, if adopt grinding and polishing method should stop grinding and polishing before exposing bonding wire.The fuming nitric aicd of Kaifeng employing is for the second time that manual Kaifeng is carried out in the etching acid that mixes composition at 2: 1 with 98% the concentrated sulfuric acid according to volume ratio.Behind each Kaifeng, all need to clean, clean and utilize acetone and deionized water to clean successively for the first time, clean for the second time and adopt acetone, isopropyl alcohol and deionized water to clean successively.Behind Kaifeng, available microscopic examination is not subject to the structure of passivation layer protection there is no the vestige of etching to the chip surface of device.
The present invention adopts accurate control Kaifeng technological parameter (being mainly etching acid proportioning and temperature); and the epoxy seal semiconductor integrated circuit that adopts the method for twice etching process to adopt ambrose alloy, nickel tungsten etc. not produced by the process structure of passivation layer protection to chip surface breaks a seal; the internal structure of reservation device that can be complete behind Kaifeng; guarantee that device can also keep electrical property behind Kaifeng, meet the requirement of the subsequent survey such as Destructive Physical Analysis and failure analysis to device integrity completely.
In this specification, the present invention is described with reference to its specific embodiment, still, still can make various modifications and conversion obviously and not deviate from the spirit and scope of invention.Therefore, specification of the present invention and accompanying drawing are considered to illustrative and nonrestrictive.
Claims (7)
1. contain a not opening method for the plastic device of passivated metal layer structure, it is characterized in that, comprise the following steps:
Before etching acid one etching, carry out etching for the first time and cleaning for the first time, be specially and utilize fuming nitric aicd etching plastic device 5-10 second under the environment of 80 ℃-90 ℃, and in 30 seconds, start to carry out cleaning process, to remove the unnecessary acid solution of device surface;
Under the environment of 70 ℃-80 ℃, utilize one etching plastic device 10-20 second of etching acid, this etching acid one is mixed and forms by 2:1 volume ratio by fuming nitric aicd and 98% concentrated sulfuric acid; After etching acid one etching plastic device, immediately device is cleaned up, concrete cleaning process is for adopting acetone cleaning 2 times, each scavenging period 1 minute; Clean 1 minute with isopropyl alcohol again, then use washed with de-ionized water 2 minutes, finally air-dry in air.
2. the not opening method of the plastic device of passivated metal layer structure that contains as claimed in claim 1, is characterized in that, described cleaning process is for the first time: first adopt acetone to clean 1 minute, then use washed with de-ionized water 2 minutes, and finally air-dry in air.
3. the not opening method of the plastic device of passivated metal layer structure that contains as claimed in claim 2, is characterized in that, described etching acid one etching plastic device time under 75 ℃ of temperature environments is 10 seconds.
4. the not opening method of the plastic device of passivated metal layer structure that contains as claimed in claim 3, it is characterized in that, before Kaifeng, first device is carried out to X-ray examination or ultrasonic scanning inspection, obtain device inside chip size, position and depth information, according to the consumption of these Information Selection etching acid one and fuming nitric aicd, time of contact, the consumption of cleaning fluid and scavenging period.
5. the not opening method of the plastic device of passivated metal layer structure that contains as claimed in claim 4, it is characterized in that, etching acid one flow is selected 1 ml/min, touches the device beginning timing that is as the criterion with etching acid one, and be 10-20 second the time of contact of device and etching acid one.
6. the not opening method of the plastic device of passivated metal layer structure that contains as claimed in claim 4, it is characterized in that, the fuming nitric aicd flow that etching is used is selected 1 ml/min, touches the device beginning timing that is as the criterion with fuming nitric aicd, and device contacts 5-10 second with fuming nitric aicd.
As described in claim 5 or 6 containing the opening method of the plastic device of passivated metal layer structure not, it is characterized in that, described opening method is for adopting automatic mail opener to break a seal or break a seal manually.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010527075.7A CN102456538B (en) | 2010-11-02 | 2010-11-02 | Method for unsealing plastically-packaged apparatus containing un-passivated metal layer structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010527075.7A CN102456538B (en) | 2010-11-02 | 2010-11-02 | Method for unsealing plastically-packaged apparatus containing un-passivated metal layer structure |
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| Publication Number | Publication Date |
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| CN102456538A CN102456538A (en) | 2012-05-16 |
| CN102456538B true CN102456538B (en) | 2014-07-02 |
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Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103545171B (en) * | 2012-07-17 | 2016-08-03 | 北大方正集团有限公司 | A kind of surface protection material from high-power device minimizing technology |
| CN104458753B (en) * | 2014-11-04 | 2016-09-14 | 航天科工防御技术研究试验中心 | semiconductor device physical characteristic analysis method |
| CN104599981B (en) * | 2015-01-07 | 2017-06-30 | 航天科工防御技术研究试验中心 | The opening method of plastic device |
| CN104599997A (en) * | 2015-01-30 | 2015-05-06 | 工业和信息化部电子第五研究所 | Unpacking method of plastic-packed metal wire bonding device |
| CN106683977A (en) * | 2016-12-16 | 2017-05-17 | 贵州航天计量测试技术研究所 | Unsealing device and unsealing method of molded package device |
| CN107655903A (en) * | 2017-09-04 | 2018-02-02 | 西安微电子技术研究所 | A kind of plastic packaging optocoupler anatomic method |
| CN109950156A (en) * | 2017-12-20 | 2019-06-28 | 海太半导体（无锡）有限公司 | A kind of flip-chip opening method |
| CN109244062A (en) * | 2018-08-24 | 2019-01-18 | 中山市江波龙电子有限公司 | A kind of semiconductor packing device and preparation method thereof, test method |
| CN112108481B (en) * | 2019-06-21 | 2022-05-13 | 北京振兴计量测试研究所 | Method for dissecting plastic package optocoupler |
| CN114578203B (en) * | 2022-05-05 | 2022-08-23 | 江山季丰电子科技有限公司 | Unsealing method, application and failure analysis method of chip packaged by adopting routing process |
| CN115353887B (en) * | 2022-10-20 | 2023-02-03 | 上海聚跃检测技术有限公司 | Plastic package body corrosive liquid and method for uncapping plastic package body by using same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6368886B1 (en) * | 2000-09-15 | 2002-04-09 | The Charles Stark Draper Laboratory, Inc. | Method of recovering encapsulated die |
| CN201477600U (en) * | 2009-07-29 | 2010-05-19 | 深圳国微技术有限公司 | Tampered detecting circuit for protecting chip |
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2010
- 2010-11-02 CN CN201010527075.7A patent/CN102456538B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6368886B1 (en) * | 2000-09-15 | 2002-04-09 | The Charles Stark Draper Laboratory, Inc. | Method of recovering encapsulated die |
| CN201477600U (en) * | 2009-07-29 | 2010-05-19 | 深圳国微技术有限公司 | Tampered detecting circuit for protecting chip |
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