CN104599997A - Unpacking method of plastic-packed metal wire bonding device - Google Patents
Unpacking method of plastic-packed metal wire bonding device Download PDFInfo
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- CN104599997A CN104599997A CN201510053404.1A CN201510053404A CN104599997A CN 104599997 A CN104599997 A CN 104599997A CN 201510053404 A CN201510053404 A CN 201510053404A CN 104599997 A CN104599997 A CN 104599997A
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- chip
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- packaging material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
Abstract
The invention discloses an unpacking method of a plastic-packed metal wire bonding device, and belongs to the technical field of failure analysis of electronic devices. The unpacking method comprises the steps of performing flat grinding, cutting grooves and separating; when in flat grinding, the device is grinded through a 120-2000 meshes abrasive paper, wherein the grinding surface is the one plastic packing side of the active surface of a chip; the plastic packing material on the surface of the chip is gradually grinded and removed, and the grinding is stopped at the part being 0.5 to 3mm away from the chip surface; when in groove cutting, annular grooves are cut about the position of the chip, on the device grinding surface; when in separating, a plastic-packing material area surrounded with the annular groove is adhered through adhering materials, then the adhering materials are pulled until the plastic-packing material is pulled an separated from the chip surface so as to expose the chip. According to the method, the exposed internal chip of the device remains the bonding state of a first bonding point of a bonding wire, the corrosion and dirt close to the chip surface and the bonding part and other important information.
Description
Technical field
The present invention relates to Failure Analysis Technology of Electronic Component field, particularly relate to a kind of opening method of Plastic Package wire bond devices.
Background technology
In recent years, semicon industry adopts the part category of Plastic Package copper wire bonding packaging technique to get more and more, but because copper wire bonding technology development itself is relatively late, relative gold wire bonding, the technology controlling and process of copper wire bonding and maturity are not enough, often because the reasons such as copper wire oxidation, dirty, corrosion cause bonding point to occur, " rosin joint ", " crater " etc. are bad, and after causing injection moulding to complete, the failure phenomenons such as open circuit, electric leakage appear in device.
In order to analyzing and testing causes the failure cause of Plastic Package copper wire bond devices, often need to break a seal to plastic packaged device, the plastic packaging material on removal devices surface, to detect inside chip and bonding technology quality.
At present, two kinds of opening methods such as chemical corrosion, laser ablation are usually had to the opening method of Plastic Package copper wire bond devices.
Wherein, with chemical corrosion method Kaifeng Plastic Package copper wire bond devices, generally the mixed acid utilizing oleum and fuming nitric aicd, under cryogenic, alignment feature chip area, utilizes manual acid or automatic mail opener equipment automatically to spray acid, erodes the plastic packaging material of chip surface gradually, and then utilize acetone, alcohol, washed with de-ionized water, finally dry sample.
With laser ablation Kaifeng Plastic Package copper wire bond devices, generally use special laser equipment, utilize the high-energy feature of laser focusing, by device surface major part plastic packaging material ablation, thinning, until stop when will arriving chip surface, recycle above-mentioned first method (chemical corrosion) and remove the residue plastic packaging material covering chip surface.
But, above-mentioned two kinds of methods all have inevitable defect: chemical corrosion method Kaifeng plastic packaging copper wire bond devices, general needs carry out under lower temperature (10 DEG C ~ 40 DEG C), and the device Kaifeng time thicker for plastic seal charging is longer, nor can ensure to retain copper wire structure.Bonding region or chip surface are existed to the situation of corrosion, the important informations such as original source of corrosion, corrosion product can be caused to lose, or new source of corrosion may be introduced, original source of corrosion cannot be distinguished.And laser ablation Kaifeng Plastic Package copper wire bond devices, exposed chip surface of cannot directly breaking a seal, is very easily damaged to chip because laser energy is uneven in the process of Kaifeng.The last method of chemical corrosion that also needs of same laser ablation removes residual plastic packaging material, and the important informations such as original source of corrosion, corrosion product may be caused equally to lose.
Therefore, need a kind of method that Plastic Package copper wire bond devices is broken a seal badly, the method can either remove the plastic packaging material covering chip surface, expose device inside chip, the first bonding point bond styles of copper wire can be retained again, and retain the important informations such as burn near chip surface and bonding is dirty.
Summary of the invention
Based on this, the object of the invention is to the defect overcoming prior art, a kind of opening method of Plastic Package wire bond devices is provided, expose the inside chip of device in this way, can the important informations such as the burn near the first bonding point bond styles of bonding wire, chip surface and bonding is dirty retained.
For achieving the above object, the present invention takes following technical scheme:
An opening method for Plastic Package wire bond devices, comprises plain grinding, cuts groove, separating step, wherein:
In described plain grinding step: grind device with 120-2000 object sand paper, abradant surface is the plastic packaging side in chip active face, and the plastic packaging material of chip surface is removed in grinding gradually, during to distance chip surface 0.5mm-3mm, stops grinding;
Describedly cut in groove step: on device abradant surface, the surrounding along chip position cuts out annular groove;
In described separating step: with cohesive material paste above-mentioned annular groove around plastic packaging material region, then pull-up cohesive material, the plastic packaging material to chip surface is pulled up, and exposes chip.
The opening method of a kind of Plastic Package wire bond devices of the present invention, first in the mode of sand paper grinding, reduction processing is carried out to the plastic packaging material of device surface, to plastic packaging material only remaining 0.5mm-3mm time (when indistinctly can observe chip surface), cut the plastic packaging material that this is thinning again, the plastic packaging material edge of the covering chip plastic encapsulant as a whole with pressing is separated, finally, passes through cohesive material, plastic packaging material is opened, exposed chip surface in the mode of gentleness.
Opening method of the present invention, process from the front of device (i.e. chip active face close on side), just carries out the grinding of physical property, cutting process, avoids the loss that chemical corrosion process causes the important informations such as source of corrosion.Further, this opening method is when plain grinding is soon close to chip surface, and stopping grinding, utilizes remaining plastic packaging material isolating chip surface, thus avoid the new pollutant sources of introducing; Now the bond styles of the first bonding point wiry also keeps original state with chip, after groove to be cut, bonding separating treatment, no matter whether the first bonding point comes off or still keep being connected with chip, can be undertaken observing, analyzing its come off face or bonding pattern by light microscope or electronic scanner microscope, and coherent element composition can be detected, thus the reason of component failure can be caused by assistant analysis.
Wherein in an embodiment, before described plain grinding step, also comprise sample fixing step, in described sample fixing step: be fixed on substrate by device by the method for welding.When the size of device is less, device is fixed, be convenient to follow-up plain grinding operation, particularly can guarantee abradant surface and chip face keeping parallelism, avoid uneven the generation chip of grinding to damage.Device or can be cemented in epoxidized block for slightly large PCB, the copper coin of volume by described substrate, and chip active face should towards outside (i.e. abradant surface side).
Wherein in an embodiment, after described separating step, also comprise observation analysis step, in described observation analysis step: detected under the microscope by the plastic packaging material that the device of exposed chip and cohesive material are pasted, observation, the physics at Analyze & separate interface, chemical feature, and record result.Described microscope is light microscope and/or electronic scanner microscope.
Wherein in an embodiment, described sand paper is 1200-2000 order.Adopt thinner sand paper, there is good grinding dynamics, thus avoid the damage that may cause chip.
Wherein in an embodiment, in described plain grinding step: be ground to distance chip surface 0.5mm-1.5mm, stop grinding.Be convenient to follow-up cut groove and separating step carries out smoothly.
Wherein in an embodiment, in described plain grinding step, process of lapping carries out with the lapping mode being parallel to chip.The situation because the uneven segment chip caused of plastic packaging material thickness thinning above chip is impaired is avoided to occur.
Wherein in an embodiment, the degree of depth of described annular groove is that the thickness of abradant surface residue plastic packaging material adds 0.1mm-2mm again.To guarantee plastic packaging material to cut off, cohesive material is easy to plastic packaging material pull-up.
Wherein in an embodiment, described in cut in groove step: cut with the surrounding of blade along inside chip position.Available scalpel or general blade operation, have simple and easy to do feature.
Wherein in an embodiment, described cohesive material is adhesive tape.Adhesive tape can select adhesive tape etc., has feature simple and easy to get.
Compared with prior art, the present invention has following beneficial effect:
The opening method of a kind of Plastic Package wire bond devices of the present invention, can retain the important informations such as the burn near the first bonding point bond styles of bonding wire, chip surface and bonding is dirty.And to equipment and tool demands low, workable, can be used for detect, analyze wire bond devices there is the occasion such as bonding rosin joint, the dirty corrosion of chip.Applicable device comprises the plastic packaged device adopting copper wire bonding, gold wire bonding, aluminium wire bonding.
Embodiment
Below in conjunction with embodiment, the present invention is described further, but do not cause any restriction to the present invention.
Embodiment 1
An opening method for Plastic Package copper wire bond devices, comprises the following steps:
(1) fixing: by the method for welding, device to be fixed on substrate.This substrate is the PCB that volume is slightly large.
(2) plain grinding: device is ground with 1200 object sand paper, abradant surface is chip active dough model front cover side, and the plastic packaging material of chip surface is removed in grinding gradually, during to distance chip surface 1.5mm, stops grinding;
(3) cut groove: on device abradant surface, cut out annular groove with the blade of blade along the surrounding of chip position, the degree of depth of this annular groove is 2mm;
(4) be separated: with adhesive tape paste above-mentioned annular groove around plastic packaging material region, then pull-up adhesive tape, the plastic packaging material to chip surface is pulled up, expose chip.
(5) analyze: the plastic packaging material that the device of exposed chip and cohesive material are pasted is observed under the microscope, the physics at Analyze & separate interface, chemical feature, and record result.
Break a seal Plastic Package copper wire bond devices in this way, and the bond styles of the first bonding point of copper wire also keeps original state with chip, after cutting groove, separating treatment, no matter whether the first bonding point comes off or still keep being connected with chip.And the equal not damaged situation of chip of all devices of test.
Embodiment 2
An opening method for Plastic Package copper wire bond devices, comprises the following steps:
(1) fixing: by the method for welding, device to be fixed on substrate.This substrate is copper coin.
(2) plain grinding: device is ground with 2000 object sand paper, abradant surface is the plastic packaging side in chip active face, and the plastic packaging material of chip surface is removed in grinding gradually, during to distance chip surface 0.5mm, stops grinding;
(3) cut groove: on device abradant surface, cut out annular groove with the blade of blade along the surrounding of chip position, the degree of depth of this annular groove is 1mm;
(4) be separated: with adhesive tape paste above-mentioned annular groove around plastic packaging material region, then pull-up adhesive tape, the plastic packaging material to chip surface is pulled up, expose chip.
(5) analyze: the plastic packaging material that the device of exposed chip and cohesive material are pasted is observed under the microscope, the physics at Analyze & separate interface, chemical feature, and record result.
Break a seal Plastic Package copper wire bond devices in this way, and the bond styles of the first bonding point of copper wire also keeps original state with chip, after cutting groove, separating treatment, no matter whether the first bonding point comes off or still keep being connected with chip.And the equal not damaged situation of chip of all devices of test.
Embodiment 3
An opening method for Plastic Package copper wire bond devices, comprises the following steps:
(1) plain grinding: this device size is comparatively large, and hand-held assurance, grinds device with 120 object sand paper, and abradant surface is the plastic packaging side in chip active face, the plastic packaging material of chip surface is removed in grinding gradually, during to distance chip surface 2mm, stops grinding;
(2) cut groove: on device abradant surface, cut out annular groove with the blade of scalpel along the surrounding of chip position, the degree of depth of this annular groove is 4mm;
(3) be separated: with adhesive tape paste above-mentioned annular groove around plastic packaging material region, then pull-up adhesive tape, repeatedly, the plastic packaging material to chip surface is pulled up, expose chip.
Break a seal Plastic Package copper wire bond devices in this way, because sand paper is comparatively coarse, for avoiding damaging chip, just should stop grinding when plastic packaging material thickness is 2mm, and the plastic packaging material now retained is thicker, need larger for depth of groove setting when cutting groove, there is certain operation easier, and when being separated because plastic packaging material is thicker, need larger dynamics could by plastic packaging material pull-up, finally cause the plastic packaging material that device chip remained on surface is more, cannot completely exposed chip surface.
Comparative example 1
An opening method for Plastic Package copper wire bond devices, comprises the following steps:
(1) plain grinding: this device size is comparatively large, and hand-held assurance, grinds device with 120 object sand paper, and abradant surface is the plastic packaging side in chip active face, the plastic packaging material of chip surface is removed in grinding gradually, during to distance chip surface 2mm, stops grinding;
(2) cut groove: on device abradant surface, cut out annular groove with the blade of scalpel along the surrounding of chip position, the degree of depth of this annular groove is 4mm;
(3) be separated: scalpel tip is inserted in above-mentioned groove, annular groove around plastic packaging material lever up, expose chip.
Break a seal Plastic Package copper wire bond devices in this way, causes device chip to occur mechanical damage, make the phenomenon that chip produces fragmentation, crackle even makes chip come off, have impact on follow-up determination and analysis.
The above embodiment only have expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (9)
1. an opening method for Plastic Package wire bond devices, is characterized in that, comprises plain grinding, cuts groove, separating step, wherein:
In described plain grinding step: grind device with 120-2000 object sand paper, abradant surface is the plastic packaging side in chip active face, and the plastic packaging material of chip surface is removed in grinding gradually, during to distance chip surface 0.5mm-3mm, stops grinding;
Describedly cut in groove step: on device abradant surface, the surrounding along chip position cuts out annular groove;
In described separating step: with cohesive material paste above-mentioned annular groove around plastic packaging material region, then pull-up cohesive material, the plastic packaging material to chip surface is pulled up, and exposes chip.
2. the opening method of Plastic Package metal copper wire bond devices according to claim 1, is characterized in that, before described plain grinding step, also comprise sample fixing step, in described sample fixing step: be fixed on substrate by device by the method for welding.
3. the opening method of Plastic Package wire bond devices according to claim 1, it is characterized in that, after described separating step, also comprise observation analysis step, in described observation analysis step: the plastic packaging material that the device of exposed chip and cohesive material are pasted is detected under the microscope, observation, the physics at Analyze & separate interface, chemical feature, and record result.
4. the opening method of Plastic Package wire bond devices according to claim 1, is characterized in that, described sand paper is 1200-2000 order.
5. the opening method of Plastic Package wire bond devices according to claim 1, is characterized in that, in described plain grinding step: be ground to distance chip surface 0.5mm-1.5mm, stop grinding.
6. the opening method of Plastic Package wire bond devices according to claim 1, is characterized in that, in described plain grinding step, process of lapping carries out with the lapping mode being parallel to chip.
7. the opening method of Plastic Package wire bond devices according to claim 1, is characterized in that, the degree of depth of described annular groove is that the thickness of abradant surface residue plastic packaging material adds 0.1mm-2mm again.
8. the opening method of Plastic Package wire bond devices according to claim 1, is characterized in that, described in cut in groove step: cut with the surrounding of blade along inside chip position.
9. the opening method of Plastic Package wire bond devices according to claim 1, is characterized in that, described cohesive material is adhesive tape.
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Cited By (7)
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CN105070649A (en) * | 2015-08-12 | 2015-11-18 | 上海华力微电子有限公司 | Method for removing lead bonding |
CN106158690A (en) * | 2016-08-16 | 2016-11-23 | 南京矽邦半导体有限公司 | A kind of method in energy quick detection chip crater |
CN107170663A (en) * | 2016-03-03 | 2017-09-15 | 北京智芯微电子科技有限公司 | A kind of method that chip is taken out from packaging body |
CN110018187A (en) * | 2019-04-12 | 2019-07-16 | 西安太乙电子有限公司 | A kind of anatomic method of 3D module |
CN110146503A (en) * | 2019-05-28 | 2019-08-20 | 青岛歌尔微电子研究院有限公司 | Interface metal is total to the coverage rate detection method of compound |
CN111261533A (en) * | 2020-01-21 | 2020-06-09 | 宜特(上海)检测技术有限公司 | Method for taking chip by driving IC |
CN116230494A (en) * | 2022-12-12 | 2023-06-06 | 佛山市蓝箭电子股份有限公司 | Automatic removing method and system for semiconductor plastic packaging material |
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CN105070649A (en) * | 2015-08-12 | 2015-11-18 | 上海华力微电子有限公司 | Method for removing lead bonding |
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CN116230494A (en) * | 2022-12-12 | 2023-06-06 | 佛山市蓝箭电子股份有限公司 | Automatic removing method and system for semiconductor plastic packaging material |
CN116230494B (en) * | 2022-12-12 | 2024-03-26 | 佛山市蓝箭电子股份有限公司 | Automatic removing method and system for semiconductor plastic packaging material |
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Application publication date: 20150506 |