CN113945442B - Method for taking crystal grain in gallium arsenide chip packaging structure and application - Google Patents
Method for taking crystal grain in gallium arsenide chip packaging structure and application Download PDFInfo
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- CN113945442B CN113945442B CN202111205743.9A CN202111205743A CN113945442B CN 113945442 B CN113945442 B CN 113945442B CN 202111205743 A CN202111205743 A CN 202111205743A CN 113945442 B CN113945442 B CN 113945442B
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Abstract
The invention provides a method for taking crystal grains from a gallium arsenide chip packaging structure and application, and relates to the technical field of gallium arsenide chips. The method for taking the crystal grain from the gallium arsenide chip packaging structure adopts the liquid mixture with specific raw material composition and proportion to react with the gallium arsenide chip packaging structure, and controls the reaction time and temperature, thereby realizing the complete removal of the plastic package body and the substrate in the gallium arsenide chip packaging structure, simultaneously avoiding the damage to the crystal grain and realizing the complete extraction of the crystal grain. The invention provides the application of the method for taking the crystal grain from the gallium arsenide chip packaging structure, and in view of the advantages of the method, the extracted crystal grain is not corroded and damaged, the integrity of the crystal grain is ensured, and a precondition is provided for researching the failure analysis of the gallium arsenide chip. The invention also provides a failure analysis method of the gallium arsenide chip.
Description
Technical Field
The invention relates to the technical field of gallium arsenide chips, in particular to a method for taking crystal grains from a gallium arsenide chip packaging structure and application thereof.
Background
Gallium arsenide (GaAs) is an important semiconductor material, and has excellent electrical characteristics such as high saturation electron rate, high electron mobility, and high breakdown voltage, and a semiconductor device manufactured by using the GaAs has advantages of good high-frequency, high-temperature, and low-temperature performances, low noise, and strong radiation resistance, and thus is widely used in the fields of integrated circuits, light emitting diodes, semiconductor lasers, solar cells, and the like.
With the increasing requirements of people on the quality and reliability of gallium arsenide chip products, the failure analysis work of gallium arsenide chips becomes more and more important. Failure analysis can provide necessary feedback information for design engineers to continuously improve or repair the chip design to better conform to the design specifications. The failure analysis can evaluate the effectiveness of different test vectors, provide necessary supplement for production test and provide necessary information basis for verifying test flow optimization.
The current gallium arsenide chip is usually packaged on a substrate by a plastic package body to form a gallium arsenide chip package structure. That is, the gallium arsenide chip package structure includes a substrate 10, a die 20 and a molding compound 30, the die 20 is disposed on a surface of one side of the substrate 10, and the molding compound 30 packages the die 20 on the surface of the substrate 10, as shown in fig. 1. Before failure analysis is carried out on the gallium arsenide chip, the gallium arsenide chip (crystal grain) needs to be separated from a gallium arsenide chip packaging structure, and the surface of the crystal grain cannot be damaged in the separation process, otherwise, the accuracy of the failure analysis is influenced. In the prior art, fuming nitric acid is generally used for extracting crystal grains from a gallium arsenide chip packaging structure, but the fuming nitric acid can react with gallium arsenide to cause the corrosion of the crystal grains, so that the failure analysis work on the crystal grains cannot be carried out all the time.
Accordingly, the present invention is directed to solving at least one of the problems set forth above.
Disclosure of Invention
The first objective of the present invention is to provide a method for taking out a die from a gallium arsenide chip package structure, so as to improve the technical problem that the die cannot be completely taken out in the prior art.
The second objective of the present invention is to provide an application of the method for taking out the die from the gallium arsenide chip package structure.
The third objective of the present invention is to provide a failure analysis method for a gallium arsenide chip.
In order to achieve the purpose, the technical scheme of the invention is as follows:
the invention provides a method for taking crystal grains from a gallium arsenide chip packaging structure, which comprises the following steps:
(a) pretreating the gallium arsenide chip packaging structure;
(b) placing the pretreated gallium arsenide chip packaging structure in a liquid composition for reaction, wherein the reaction time is 15-20s, the temperature is 150-;
the liquid composition comprises concentrated sulfuric acid, first nitric acid and second nitric acid, wherein the mass fraction of the first nitric acid is 95-99.9%, the mass fraction of the second nitric acid is 65-70%, and the volume ratio of the concentrated sulfuric acid to the first nitric acid to the second nitric acid is (2.5-3.0) - (0.8-1.0) - (0.4-0.6).
Further, on the basis of the above technical solution of the present invention, in the step (a), the substrate of the gallium arsenide chip package structure is a copper substrate.
Further, on the basis of the above technical solution of the present invention, in the step (a), the thickness of the copper substrate is 50 to 100 μm.
Further, on the basis of the above technical solution of the present invention, in the step (a), the package thickness of the plastic package body of the gallium arsenide chip package structure is 550-1200 μm.
Further, on the basis of the above technical solution of the present invention, in the step (a), the pretreatment includes a step of at least partially removing the substrate and/or the plastic package in the gallium arsenide chip package structure.
Further, on the basis of the above technical solution of the present invention, in the step (b), the mass fraction of the concentrated sulfuric acid in the liquid composition is 98-99.9%.
Further, on the basis of the above technical solution of the present invention, in the step (b), the volume ratio of the concentrated sulfuric acid, the first nitric acid and the second nitric acid in the liquid composition is (2.8-3.0) to (0.9-1.0):
(0.5-0.6)。
further, on the basis of the above technical solution of the present invention, in the step (b), the volume ratio of the concentrated sulfuric acid, the first nitric acid and the second nitric acid in the liquid composition is 3.0:1.0: 0.5.
Further, on the basis of the above technical scheme of the present invention, in the step (b), the reaction time is 16 to 19 s.
Further, on the basis of the above technical scheme of the present invention, in the step (b), the temperature of the reaction is 155-.
Further, on the basis of the above technical solution of the present invention, in the step (b), the cleaning agent used for cleaning includes any one of water, soap water, concentrated sulfuric acid, acetone, or alcohol.
Further, on the basis of the above technical solution of the present invention, in the step (b), the cleaning time is 10 to 30 s.
Further, on the basis of the above technical solution of the present invention, in the step (b), the cleaning is ultrasonic cleaning.
Further, on the basis of the above technical solution of the present invention, the method for taking out the crystal grain in the gallium arsenide chip packaging structure comprises the following steps:
(a) removing at least part of the substrate and at least part of the plastic package body in the gallium arsenide chip packaging structure for pretreatment;
(b) placing the pretreated gallium arsenide chip packaging structure in a liquid composition for reaction, wherein the reaction time is 15-20s, the reaction temperature is 150-;
the liquid composition comprises concentrated sulfuric acid, first nitric acid and second nitric acid, wherein the mass fraction of the first nitric acid is 95-99.9%, the mass fraction of the second nitric acid is 65-70%, and the volume ratio of the concentrated sulfuric acid to the first nitric acid to the second nitric acid is (2.5-3.0) - (0.8-1.0) - (0.4-0.6).
The invention also provides the application of the method for taking the crystal grain from the gallium arsenide chip packaging structure in gallium arsenide chip failure analysis.
The invention also provides a failure analysis method of the gallium arsenide chip, which comprises the following steps:
exposing the crystal grain by adopting the method for taking the crystal grain from the gallium arsenide chip packaging structure;
and carrying out defect analysis on the crystal grains.
Further, on the basis of the technical scheme of the invention, the defect analysis is carried out on the crystal grains by adopting an optical microscope and/or an electrical test.
Compared with the prior art, the invention has the following technical effects:
(1) the invention provides a method for taking crystal grains from a gallium arsenide chip packaging structure, which adopts a liquid mixture with specific raw material composition and proportion to react with the gallium arsenide chip packaging structure, and realizes the complete removal of a plastic package body and a substrate in the gallium arsenide chip packaging structure by controlling the reaction time and temperature, and simultaneously does not damage the crystal grains and realizes the complete extraction of the crystal grains.
(2) The invention provides the application of the method for taking the crystal grain in the gallium arsenide chip packaging structure, and in view of the advantages of the method for taking the crystal grain in the gallium arsenide chip packaging structure, the extracted crystal grain is not corroded and damaged, the integrity of the crystal grain is ensured, and the precondition is provided for researching the failure analysis of the gallium arsenide chip.
(3) The invention provides a failure analysis method of a gallium arsenide chip, and in view of the advantages of the method for taking the crystal grain from the gallium arsenide chip packaging structure, the crystal grain can be perfectly extracted from the gallium arsenide chip packaging structure, so that designers and researchers can perform failure analysis on the defect of the crystal grain, and further optimization of the product structure and improvement of the product performance are facilitated.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic structural diagram of a GaAs chip package structure;
fig. 2 is an optical microscope image of a die processed by the method for taking a die from a gallium arsenide chip package structure provided in embodiment 1 of the present invention;
fig. 3 is an optical microscope photograph of the die processed by the method for taking the die from the gallium arsenide chip package structure provided by comparative example 12 of the present invention.
An icon: 10-a substrate; 20-grains; and 30-plastic packaging body.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to embodiments and examples, but those skilled in the art will understand that the following embodiments and examples are only illustrative of the present invention and should not be construed as limiting the scope of the present invention. Those who do not specify the conditions are performed according to the conventional conditions or the conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available commercially.
In the description of the present invention, it should be noted that the terms "upper", "lower", and the like refer to orientations or positional relationships based on the orientations or positional relationships shown in the drawings or orientations or positional relationships that the products of the present invention are conventionally placed in use, and are used for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like are used merely to distinguish one description from another, and are not to be construed as indicating or implying relative importance.
According to a first aspect of the present invention, a method for taking a die from a gallium arsenide chip package structure is provided, which includes the following steps:
(a) preprocessing a gallium arsenide chip packaging structure;
(b) placing the pretreated gallium arsenide chip packaging structure in a liquid composition for reaction, wherein the reaction time is 15-20s, the temperature is 150-;
the liquid composition comprises concentrated sulfuric acid, first nitric acid and second nitric acid, wherein the mass fraction of the first nitric acid is 95-99.9%, the mass fraction of the second nitric acid is 65-70%, and the volume ratio of the concentrated sulfuric acid to the first nitric acid to the second nitric acid is (2.5-3.0): (0.8-1.0): 0.4-0.6).
Specifically, the gallium arsenide chip package structure is pretreated in step (a) to facilitate subsequent reaction with the liquid composition.
In step (b), the composition and ratio of the raw materials of the liquid composition are critical to the removal of the crystal grains. The liquid composition comprises concentrated sulfuric acid, first nitric acid and second nitric acid, wherein the first nitric acid is fuming nitric acid (mass fraction is typically but not limited to 95%, 96%, 97%, 98%, 99% or 99.9%) which is mainly used for dissolving the plastic package body, and the second nitric acid is concentrated nitric acid (mass fraction is typically but not limited to 65%, 66%, 67%, 68%, 69% or 70%) which is mainly used for dissolving the plastic package body and corroding a substrate, and concentrated sulfuric acid is also intentionally added into the liquid composition and is mainly used for protecting gallium arsenide crystal grains due to the fact that the first nitric acid (fuming nitric acid) has a corrosion effect on gallium arsenide at the same time. That is, when the reaction is carried out by placing the gallium arsenide chip package structure in a liquid composition, the dissolution of the molding compound, the corrosion of the substrate, and the corrosion and protection of the crystal grains are involved to be carried out simultaneously.
It is to be noted that "comprising", "mainly made of … …" in the present invention means that it may include other materials in addition to the materials, which give the liquid composition different characteristics. In addition, the terms "comprising," "made primarily of … …," and "made of … …," as used herein, are intended to be interchangeable.
The amount of each raw material in the liquid composition also directly affects the extraction effect of the crystal grains. The liquid composition typically, but not by way of limitation, has a volume ratio of concentrated sulfuric acid, first nitric acid, and second nitric acid of 2.5:0.8: 0.4, 2.8: 0.8:0.4, 3.0: 0.8:0.4, 2.5: 0.9: 0.4, 2.5: 1.0: 0.4, 2.5:0.8: 0.5, 2.5:0.8:0.6, 2.8:0.9: 0.4, 2.8:1.0: 0.4, 2.8:0.9:0.5, 2.8:1.0: 0.5, 3.0: 0.9: 0.4, 3.0:1.0: 0.4, 3.0: 0.9:0.5, 3.0:1.0:0.5 or 3.0:1.0: 0.6. if the volume ratio of the concentrated sulfuric acid in the liquid composition is too large, the substrate is corroded too slowly, the substrate cannot be corroded cleanly within a certain reaction time, if the reaction time is prolonged, the contact time of gallium arsenide and the first nitric acid is prolonged, the corrosion risk is increased, if the volume ratio of the concentrated sulfuric acid is too small, the concentration of the first nitric acid is larger, the contact area of the first nitric acid and the gallium arsenide is larger, and the reaction time is too short to protect the gallium arsenide easily. If the volume ratio of the first nitric acid is too large, the reaction speed is too fast, and the gallium arsenide is more easily corroded, and if the volume ratio of the first nitric acid is too small, the reaction time is prolonged if the plastic package body is completely removed, and the risk of gallium arsenide corrosion is increased. If the volume ratio of the second nitric acid is too large, the concentration of the total nitric acid in the liquid composition is increased, gallium arsenide corrosion is caused, if the volume ratio of the second nitric acid is too small, the substrate corrosion is too slow, the substrate cannot be completely corroded within a certain reaction time, and if the reaction time is prolonged, the contact time of the gallium arsenide and the first nitric acid is prolonged, and the corrosion risk is increased. The amounts of the respective raw materials in the liquid composition should be limited within specific numerical ranges.
The amount of the liquid composition used in the reaction process of step (b) relative to the pretreated gallium arsenide chip package structure is not particularly limited as long as the pretreated gallium arsenide chip package structure can be completely immersed in the liquid composition.
The extraction effect of the crystal grains is not only related to the raw material composition and the proportion of the liquid composition, but also has a direct relation with the reaction time and the reaction temperature. The reaction time in the present invention needs to be controlled to 15-20s, and typical but not limiting reaction times are 15s, 16s, 17s, 18s, 19s or 20 s. If the reaction time is too short (less than 15s), the reaction is likely to be insufficient, and clean gallium arsenide crystal grains (DIE) are not obtained completely, and if the reaction time is too long (longer than 20s), the gallium arsenide crystal grains are likely to be corroded and become non-functional.
In the present invention, the reaction temperature is controlled to be 150 ℃ to 200 ℃, and the typical, but not limiting, reaction temperature is 150 ℃, 155 ℃, 160 ℃, 165 ℃, 170 ℃, 175 ℃, 180 ℃, 185 ℃, 190 ℃, 195 ℃ or 200 ℃. If the reaction temperature is too low (lower than 150 ℃), the plastic package body or the substrate cannot be completely removed, the crystal grains cannot be obtained, and if the reaction temperature is too high (higher than 200 ℃), the reaction is too violent, and the optimal time for clamping the chip is not easy to grasp, so that the chip is corroded and loses efficacy. The plastic package body and the substrate can be completely removed only by keeping the reaction time and the temperature within the specific range, and meanwhile, the crystal grains are not damaged.
After the reaction is completed, the surface of the crystal grains remains small particles of the molding material, and therefore, the molding material needs to be cleaned. The cleaning mode, the cleaning agent used, the cleaning time and temperature are not particularly limited, as long as the residual plastic package material on the surface of the crystal grain can be cleaned.
The method for taking the crystal grain from the gallium arsenide chip packaging structure provided by the invention adopts the liquid mixture with specific raw material composition and proportion to react with the gallium arsenide chip packaging structure, and controls the reaction time and temperature, thereby realizing the complete removal of the plastic package body and the substrate in the gallium arsenide chip packaging structure, simultaneously avoiding the damage to the crystal grain and realizing the complete extraction of the crystal grain.
The gallium arsenide chip packaging structure comprises a substrate, a crystal grain and a plastic packaging body, wherein the crystal grain is arranged on the surface of one side of the substrate, and the plastic packaging body packages the crystal grain on the surface of one side of the substrate. The die is typically mounted on the substrate by a Quad Flat No-leads Package (QFN) or System In a Package (SIP Package).
As an optional embodiment of the present invention, in step (a), the substrate of the gallium arsenide chip package structure is a copper substrate.
As an alternative embodiment of the present invention, in step (a), the copper substrate has a thickness of 50 to 100. mu.m. Typical but non-limiting copper substrates have a thickness of 50 μm, 55 μm, 60 μm, 65 μm, 70 μm, 75 μm, 80 μm, 85 μm, 90 μm, 95 μm or 100 μm.
In an optional embodiment of the present invention, in step (a), the material of the plastic package body of the gallium arsenide chip package structure includes epoxy resin.
As an optional implementation manner of the present invention, in the step (a), the package thickness of the plastic package body of the gallium arsenide chip package structure is 550-. Typical but non-limiting package thicknesses are 550 μm, 600 μm, 650 μm, 700 μm, 750 μm, 800 μm, 850 μm, 900 μm, 950 μm, 1000 μm, 1050 μm, 1100 μm, 1150 μm or 1200 μm.
As an optional embodiment of the present invention, in the step (a), the pre-treatment includes a step of at least partially removing the substrate and/or the plastic package in the gallium arsenide chip package structure.
Here, "and/or" means that the pretreatment may include only the step of removing at least a part of the substrate, may include only the step of removing at least a part of the molding body, and may include the step of removing at least a part of the substrate and at least a part of the molding body at the same time.
The purpose of removing the substrate and thinning the plastic package is to minimize the reaction time in the liquid composition to prevent excessive reaction time that could cause excessive chemical attack on the gaas grains.
As an alternative embodiment of the present invention, in step (b), the mass fraction of concentrated sulfuric acid in the liquid composition is 98% to 99.9%.
As an alternative embodiment of the present invention, in step (b), the volume ratio of the concentrated sulfuric acid, the first nitric acid and the second nitric acid in the liquid composition is (2.8-3.0): (0.9-1.0): (0.5-0.6).
As an alternative embodiment of the present invention, in step (b), the volume ratio of the concentrated sulfuric acid, the first nitric acid and the second nitric acid in the liquid composition is 3.0:1.0: 0.5.
Through further limiting the volume ratio of the concentrated sulfuric acid, the first nitric acid and the second nitric acid in the liquid composition, the dissolving time of the gallium arsenide chip packaging structure in the reaction process with the liquid composition is shorter than the time that the gallium arsenide crystal grains are protected, namely, the dissolving rate and the corrosion rate are controlled, so that the plastic packaging body and the substrate are completely dissolved, and the crystal grains are not damaged by corrosion.
The time and temperature during the reaction are further optimized.
As an alternative embodiment of the present invention, in step (b), the reaction time is 16 to 19 s.
As an alternative embodiment of the present invention, the temperature of the reaction in step (b) is 155-190 ℃.
After the reaction is finished, the crystal grains obtained after the reaction are cleaned. The type of the cleaning agent, the cleaning temperature and time and the cleaning mode adopted in the cleaning process can be further optimized.
As an alternative embodiment of the present invention, in the step (b), the cleaning agent used for cleaning includes any one of water, soapy water, concentrated sulfuric acid, acetone or alcohol.
As an alternative embodiment of the present invention, in step (b), the washing time is 10 to 30 seconds. Typical but non-limiting washing times are 10s, 15s, 20s, 25s or 30 s.
As an alternative embodiment of the present invention, in the step (b), the cleaning is ultrasonic cleaning. The ultrasonic cleaning is favorable for cleaning residual fine particles (such as plastic package body materials) on the surface of the chip more easily and cleaning the chip more easily.
As a preferred embodiment of the present invention, a method for taking a die from a gallium arsenide chip package structure comprises the following steps:
(a) removing at least part of the substrate and at least part of the plastic package body in the gallium arsenide chip packaging structure for pretreatment;
(b) placing the pretreated gallium arsenide chip packaging structure in a liquid composition for reaction, wherein the reaction time is 15-20s, the temperature is 150-;
the liquid composition comprises concentrated sulfuric acid, first nitric acid and second nitric acid, wherein the mass fraction of the first nitric acid is 95-99.9%, the mass fraction of the second nitric acid is 65-70%, and the volume ratio of the concentrated sulfuric acid to the first nitric acid to the second nitric acid is (2.5-3.0): (0.8-1.0): 0.4-0.6).
Through the limitation of raw materials and process parameters of all steps in the method, the crystal grain taking effect is better.
According to the second aspect of the invention, the application of the method for taking the crystal grain from the gallium arsenide chip packaging structure in gallium arsenide chip failure analysis is also provided.
In view of the advantages of the method for taking the crystal grain in the gallium arsenide chip packaging structure, the extracted crystal grain is not corroded and damaged, the integrity of the crystal grain is ensured, and a precondition is provided for researching the failure analysis of the gallium arsenide chip.
According to a third aspect of the present invention, there is provided a failure analysis method for a gallium arsenide chip, comprising the steps of:
exposing the crystal grain by adopting the method for taking the crystal grain from the gallium arsenide chip packaging structure;
and carrying out defect analysis on the crystal grains.
In view of the advantages of the method for taking the crystal grain from the gallium arsenide chip packaging structure, the crystal grain can be perfectly extracted from the gallium arsenide chip packaging structure, so that designers and developers can perform failure analysis on the defect of the crystal grain, and further optimization of the product structure and improvement of the product performance are facilitated.
When the defect analysis is performed on the crystal grains, the defects of the crystal grains can be detected by adopting various technical means.
As an alternative embodiment of the present invention, the die is subjected to defect analysis using an optical microscope and/or electrical test.
The term "and/or" as used herein means that only an optical microscope, only an electrical test, or both an optical microscope and an electrical test may be used for defect analysis.
The present invention will be further described with reference to specific examples and comparative examples.
Example 1
The embodiment provides a method for taking crystal grains from a gallium arsenide chip packaging structure, which comprises the following steps:
(a) removing part of the substrate in the gallium arsenide chip packaging structure, and thinning the plastic packaging body on the front side so as to preprocess the gallium arsenide chip packaging structure;
the gallium arsenide chip packaging structure comprises a substrate, a crystal grain and a plastic packaging body, wherein the crystal grain is arranged on the surface of one side of the substrate, the crystal grain is packaged on the surface of one side of the substrate by the plastic packaging body, the substrate is a copper substrate, the thickness of the copper substrate is 60 micrometers, the material of the plastic packaging body is epoxy resin, and the packaging thickness of the plastic packaging body is 600 micrometers.
(b) Placing the pretreated gallium arsenide chip packaging structure into 20mL of liquid composition for reaction, wherein the reaction time is 15s, the temperature is 160 ℃, taking out the gallium arsenide chip packaging structure, performing ultrasonic cleaning by using soap water, and obtaining crystal grains after cleaning;
the liquid composition comprises 98% by mass of concentrated sulfuric acid, 95% by mass of first nitric acid and 65% by mass of second nitric acid, and the volume ratio of the concentrated sulfuric acid to the first nitric acid to the second nitric acid is 3.0:1.0: 0.5.
Example 2
This example provides a method for taking a die from a gallium arsenide chip package structure, except that the volume ratio of the concentrated sulfuric acid to the first nitric acid to the second nitric acid in the liquid composition is 2.5:0.8:0.6, and the other steps and process parameters are the same as those in example 1.
Example 3
This example provides a method for taking a die from a gallium arsenide chip package structure, except that the volume ratio of the concentrated sulfuric acid to the first nitric acid to the second nitric acid in the liquid composition is 2.6:0.8:0.4, and the remaining steps and process parameters are the same as those in example 1.
Example 4
This example provides a method for taking a die from a gallium arsenide chip package structure, except that the volume ratio of the concentrated sulfuric acid to the first nitric acid to the second nitric acid in the liquid composition is 2.8:0.9:0.5, and the remaining steps and process parameters are the same as those in example 1.
Example 5
This embodiment provides a method for taking a die from a gaas chip package structure, except that the reaction time in step (b) is 20s, and the remaining steps and process parameters are the same as those in embodiment 1.
Example 6
The present embodiment provides a method for taking a die from a gallium arsenide chip package structure, except that the reaction time in step (b) is 17s, and the remaining steps and process parameters are the same as those in embodiment 1.
Example 7
This example provides a method for taking a die from a gaas chip package, which is the same as that of example 1 except that the reaction temperature in step (b) is 200 ℃.
Example 8
This example provides a method for taking a die from a gaas chip package, which is the same as that of example 1 except that the reaction temperature in step (b) is 175 ℃.
Example 9
The embodiment provides a method for taking a crystal grain in a gallium arsenide chip packaging structure, except that the packaging thickness of the plastic package body in the step (a) is 1000 μm, and the other steps and process parameters are the same as those in the embodiment 1.
Example 10
The embodiment provides a method for taking crystal grains from a gallium arsenide chip packaging structure, which comprises the following steps:
(a) removing at least part of the substrate in the gallium arsenide chip packaging structure, and thinning the plastic packaging body on the front surface so as to preprocess the gallium arsenide chip packaging structure;
the gallium arsenide chip packaging structure comprises a substrate, a crystal grain and a plastic packaging body, wherein the crystal grain is arranged on the surface of one side of the substrate, the crystal grain is packaged on the surface of one side of the substrate by the plastic packaging body, the substrate is a copper substrate, the thickness of the copper substrate is 100 micrometers, the plastic packaging body is made of epoxy resin, and the packaging thickness of the plastic packaging body is 750 micrometers.
(b) Placing the pretreated gallium arsenide chip packaging structure into 20mL of liquid composition for reaction, wherein the reaction time is 18s, the temperature is 180 ℃, taking out the gallium arsenide chip packaging structure, performing ultrasonic cleaning by using soap water, and obtaining crystal grains after cleaning;
the liquid composition comprises 99% of concentrated sulfuric acid, 98% of first nitric acid and 68% of second nitric acid, and the volume ratio of the concentrated sulfuric acid to the first nitric acid to the second nitric acid is 2.8:1.0: 0.6.
Comparative example 1
This comparative example provides a method for taking a crystal grain in a gallium arsenide chip package structure, except that the volume ratio of concentrated sulfuric acid, first nitric acid and second nitric acid in the liquid composition is 2.0:1.0:0.5, and the remaining steps and process parameters are the same as those of example 1.
Comparative example 2
This comparative example provides a method for taking a crystal grain in a gallium arsenide chip package structure, except that the volume ratio of concentrated sulfuric acid, first nitric acid and second nitric acid in the liquid composition is 3.9:1.0:0.5, and the remaining steps and process parameters are the same as those of example 1.
Comparative example 3
The present comparative example provides a method for taking a crystal grain in a gallium arsenide chip package structure, the steps and process parameters being the same as those of example 1 except that the volume ratio of the concentrated sulfuric acid, the first nitric acid and the second nitric acid in the liquid composition is 3.0:1.5: 0.5.
Comparative example 4
This comparative example provides a method for taking a crystal grain in a gallium arsenide chip package structure, except that the volume ratio of concentrated sulfuric acid, first nitric acid and second nitric acid in the liquid composition is 3.0:0.5:0.5, and the remaining steps and process parameters are the same as those of example 1.
Comparative example 5
This comparative example provides a method for taking a crystal grain in a gallium arsenide chip package structure, except that the volume ratio of concentrated sulfuric acid, first nitric acid and second nitric acid in the liquid composition is 3.0:1.0:0.8, and the remaining steps and process parameters are the same as those of example 1.
Comparative example 6
This comparative example provides a method for taking a crystal grain in a gallium arsenide chip package structure, except that the volume ratio of concentrated sulfuric acid, first nitric acid and second nitric acid in the liquid composition is 3.0:1.0:0.3, and the remaining steps and process parameters are the same as those of example 1.
Comparative example 7
This comparative example provides a method for taking a crystal grain in a gallium arsenide chip package structure, the steps and process parameters being the same as those in example 1 except that concentrated sulfuric acid in the liquid composition is replaced with the same amount of the first nitric acid.
Comparative example 8
This comparative example provides a method for taking a crystal grain in a gallium arsenide chip package structure, except that concentrated sulfuric acid is not added to the liquid composition, the total amount of the liquid composition is not changed, that is, the liquid composition is the first nitric acid and the second nitric acid, the volume ratio of the first nitric acid to the second nitric acid is 1.0:0.5, and the rest of the steps and the process parameters are the same as those of example 1.
Comparative example 9
This comparative example provides a method for taking a die from a gallium arsenide chip package structure, except that concentrated sulfuric acid and a second nitric acid are not added to the liquid composition, i.e., the liquid composition is the first nitric acid, the total amount of the liquid composition is not changed, and the remaining steps and process parameters are the same as those in example 1.
Comparative example 10
This comparative example provides a method of taking a grain in a gallium arsenide chip package structure, except that the first nitric acid is not added to the liquid composition, i.e., the liquid composition is concentrated sulfuric acid and second nitric acid, the volume ratio of the concentrated sulfuric acid to the second nitric acid is 3.0:0.5, and the total amount of the liquid composition was unchanged, the remaining steps and process parameters were the same as in example 1.
Comparative example 11
This comparative example provides a method for taking a crystal grain in a gallium arsenide chip package structure, the remaining steps and process parameters being the same as those of example 1 except that the reaction time in step (b) is 10 s.
Comparative example 12
This comparative example provides a method for taking a crystal grain in a gallium arsenide chip package structure, the steps and process parameters being the same as those of example 1 except that the reaction time in step (b) is 25 s.
Comparative example 13
This comparative example provides a method for taking a crystal grain in a gallium arsenide chip package structure, the steps and process parameters being the same as those of example 1 except that the reaction temperature in step (b) is 120 ℃.
Comparative example 14
This comparative example provides a method for taking a grain in a gallium arsenide chip package structure, the steps and process parameters being the same as those of example 1 except that the reaction temperature in step (b) is 250 ℃.
Comparative example 15
This comparative example provides a method for taking a grain from a gallium arsenide chip package structure, except that the gallium arsenide chip package structure is not pre-treated, but the gallium arsenide chip package structure is directly placed in a liquid composition for reaction, and the remaining steps and process parameters are the same as those of example 1.
In order to illustrate the technical effects of the above examples and comparative examples, the following experimental examples were specifically set forth.
Experimental example 1
(1) Since many examples and comparative examples are involved, only example 1 and comparative example 12 are taken as representatives here, and the optical microscopic analysis is carried out on the crystal grains after being treated by the method of example 1 and comparative example 12, as shown in fig. 2 to fig. 3.
As can be seen from the optical microscope image of fig. 2, clean removal of the encapsulation material (see left and upper side edge black in the figure) can be achieved using the method provided in example 1, while the grains in the middle portion remain intact and are not corroded or damaged.
As can be seen from the optical microscopic image of fig. 3, the method provided by comparative example 12 also achieved the removal of most of the encapsulating material (see left and upper side edge black portions in the figure), but the gallium arsenide crystal grains (see upper left corner in the figure) were damaged and the crystal grains were not taken out completely.
(2) In order to examine the technical effects of the embodiments and the comparative examples, the gallium arsenide chip packaging structure is processed by the methods provided by the embodiments and the comparative examples, 5 groups of parallel samples are arranged in each embodiment and the comparative example, and the crystal grains taken out after each group of samples are processed are detected by an optical microscope. Since the content of the image is large, each detection result is reflected only by the data in table 1.
TABLE 1
As can be seen from the detection structure in table 1, the effect of extracting the crystal grain by using the method for extracting the crystal grain in the gallium arsenide chip package structure provided in each embodiment of the present invention is significantly better than the effect of extracting the crystal grain by using the method for extracting the crystal grain in the gallium arsenide chip package structure provided in the comparative example of the present invention.
Inventive examples 2 to 4 and comparative examples 1 to 10 were comparative experiments of example 1, and the influence of the composition of the raw materials of the liquid composition, the volume ratio of each raw material, the reaction time, and the reaction temperature on the effect of taking out the crystal grains was examined, respectively. As can be seen from the data in the table, only by using the specific raw materials and the liquid composition within the specific raw material proportioning range, the plastic package body and the matrix can be cleanly removed, and the crystal grains can be completely taken out. When one or two of the raw materials are lacked in the liquid composition or the dosage of each raw material is not within the numerical range defined by the invention, the plastic package body and the matrix cannot be cleanly removed and the crystal grains cannot be completely taken out.
Inventive examples 5 to 8 and comparative examples 11 to 14 were also comparative experiments of example 1, which examined the effect of different reaction times and reaction temperatures on the effect of taking out the crystal grains, respectively. It can be seen from the data in the table that when the reaction time is too long (corresponding to comparative example 12), the crystal grains are easily corroded, and the perfect taking-out of the crystal grains cannot be guaranteed, and when the reaction time is too short (corresponding to comparative example 11), the reaction is easily insufficient, and a part of the plastic package body or the substrate remains, and clean crystal grains cannot be obtained. When the reaction temperature is too high (corresponding to comparative example 14), the crystal grains are easily corroded to fail, and when the reaction temperature is too low (corresponding to comparative example 13), the plastic package body or the substrate cannot be completely removed, and the crystal grains cannot be obtained. Therefore, the reaction time and the reaction temperature have a direct relation with the extraction effect of the crystal grains, and the clean removal of the plastic package body and the matrix and the complete extraction of the crystal grains can be realized only when the reaction temperature and the reaction time are within the specific numerical value range defined by the invention.
Comparative example 15 of the present invention also examined the effect of the pretreatment step on the effect of grain extraction. As can be seen from the data in table 1, if the gaas chip package structure is not pretreated but directly placed in the liquid composition for reaction, a large amount of residue is likely to be left on the substrate and the plastic package, and the crystal grains cannot be obtained.
Therefore, the method for taking the crystal grain from the gallium arsenide chip packaging structure can completely remove the plastic package body and the substrate in the gallium arsenide chip packaging structure, cannot damage the crystal grain and achieves complete extraction of the crystal grain. The complete extraction of the crystal grains provides a precondition for the subsequent research of the failure analysis of the gallium arsenide chip.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (17)
1. A method for taking crystal grains from a gallium arsenide chip packaging structure is characterized by comprising the following steps:
(a) preprocessing a gallium arsenide chip packaging structure;
(b) placing the pretreated gallium arsenide chip packaging structure in a liquid composition for reaction, wherein the reaction time is 15-20s, the temperature is 150-;
the liquid composition comprises concentrated sulfuric acid, first nitric acid and second nitric acid, wherein the mass fraction of the first nitric acid is 95-99.9%, the mass fraction of the second nitric acid is 65-70%, the mass fraction of the concentrated sulfuric acid is 98-99.9%, and the volume ratio of the concentrated sulfuric acid to the first nitric acid to the second nitric acid is (2.5-3.0): (0.8-1.0): (0.4-0.6).
2. The method of claim 1, wherein in step (a), the substrate of the GaAs chip package is a copper substrate.
3. The method of claim 2, wherein in step (a), the copper substrate has a thickness of 50-100 μm.
4. The method of claim 1, wherein in step (a), the molding compound of the GaAs chip package structure comprises an epoxy resin.
5. The method of claim 1, wherein in step (a), the package thickness of the plastic package of the GaAs chip package structure is 550-1200 μm.
6. The method of claim 1, wherein the pre-treating step (a) comprises at least partially removing the substrate and/or the molding compound from the GaAs chip package.
7. The method of claim 1, wherein in step (b), the volume ratio of the concentrated sulfuric acid to the first nitric acid to the second nitric acid in the liquid composition is (2.8-3.0): (0.9-1.0): (0.5-0.6).
8. The method of claim 7, wherein in step (b), the volume ratio of concentrated sulfuric acid to the first nitric acid to the second nitric acid in the liquid composition is 3.0:1.0: 0.5.
9. The method of taking die from the packaging structure of GaAs chip as claimed in any of claims 1-6, wherein in step (b), the reaction time is 16-19 s.
10. The method for taking out the die from the GaAs chip package structure of any of claims 1 to 6, wherein the temperature of the reaction in the step (b) is 155-190 ℃.
11. The method for taking out die from the packaging structure of gallium arsenide chip as claimed in any of claims 1-6, wherein in step (b), the cleaning agent used for cleaning comprises any of water, soap water, concentrated sulfuric acid, acetone or alcohol.
12. The method of claim 11, wherein the time for cleaning in step (b) is 10-30 s.
13. The method of claim 11, wherein in step (b), the cleaning is ultrasonic cleaning.
14. The method for taking out die from the gallium arsenide chip package structure of any of claims 1-6, comprising the steps of:
(a) removing at least part of the substrate and at least part of the plastic package body in the gallium arsenide chip packaging structure for pretreatment;
(b) placing the pretreated gallium arsenide chip packaging structure in a liquid composition for reaction, wherein the reaction time is 15-20s, the reaction temperature is 150-;
the liquid composition comprises concentrated sulfuric acid, first nitric acid and second nitric acid, wherein the mass fraction of the first nitric acid is 95-99.9%, the mass fraction of the second nitric acid is 65-70%, and the volume ratio of the concentrated sulfuric acid to the first nitric acid to the second nitric acid is (2.5-3.0) - (0.8-1.0) - (0.4-0.6).
15. Use of the method of taking a die from a gallium arsenide chip package according to any of claims 1 to 14 for failure analysis of gallium arsenide chips.
16. A failure analysis method of a gallium arsenide chip is characterized by comprising the following steps:
exposing the die by the method of taking the die from the gallium arsenide chip package structure of any of claims 1-14;
and carrying out defect analysis on the crystal grains.
17. The method of claim 16, wherein the defect analysis is performed on the die using an optical microscope and/or electrical testing.
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