CN106158690A - A kind of method in energy quick detection chip crater - Google Patents
A kind of method in energy quick detection chip crater Download PDFInfo
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- CN106158690A CN106158690A CN201610672356.9A CN201610672356A CN106158690A CN 106158690 A CN106158690 A CN 106158690A CN 201610672356 A CN201610672356 A CN 201610672356A CN 106158690 A CN106158690 A CN 106158690A
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- sodium hydroxide
- crater
- beaker
- chip
- quick detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sampling And Sample Adjustment (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
Abstract
The method that the invention discloses a kind of energy quick detection chip crater, comprises the following steps: S1, preparation: chip product, cutter, 100ML beaker A, 100ML beaker B, heating platform, metal pincet, stirring rod, high power microscope, sodium hydroxide, acetone, water;S2, weighing sodium hydroxide and water;S3, water and sodium hydroxide are added in 100ML beaker A, stir with Glass rod;S4, sodium hydroxide solution is put into heating platform heating;S5, use cutter diced chip product, then put in sodium hydroxide solution with metal pincet and heat;S6, taking-up chip product, put into and clean in the 100ML beaker B filling acetone and dry;S7, under high power microscope observe chip product situation.The method in a kind of energy quick detection chip crater that the present invention proposes, simple to operate, can quickly detect crater, the shortest, improve work efficiency, it is ensured that product quality, improve utilization rate of equipment and installations simultaneously, add production capacity, reduce cost.
Description
Technical field
The present invention relates to semiconductor packages bonding wire operation quality inspection operation field, particularly relate to one and can quickly detect core
The method in sheet crater.
Background technology
Chip refers to include the silicon chip of integrated circuit, and volume is the least, is a part for computer or other electronic equipments, integrated
Circuit package be exactly chip, lead frame after pressure welding lead-in wire connects, then be encapsulated with plastic packaging material, for integrated circuit
Chip provides output and protection, it is to avoid the artificial and damage of environmental factors, thus ensure integrated circuit can stablize, reliably work
Make.Crater is exactly during integrated antenna package, because various factors makes chip aluminum pad aluminium lamination and bottom silicon compound go to pot
A kind of phenomenon.The factor producing crater problem is varied, in order to produce the chip product of high-quality, low cost, crater
Detection and decision method be particularly important.
The detection method in the most the most frequently used chip crater has two kinds, and one is with chemical medicinal liquid potassium hydroxide, phosphoric acid heating
Carry out, additionally use chloroazotic acid and carry out contrast test, finally carry out checking judgement, the safety to operator under high power microscope
Requirement of shelter is higher, and heat time heating time and the bad control of heating-up temperature, the longest, inefficiency;Two is strong base solution
Drop on ready-made finished product IC chip, utilize room temperature to allow solution react, finally at high power microscope with the solder joint aluminum on chip
Under carry out checking and judge, simple to operate, but product quality is the highest, and required time is long, inefficiency.This present invention is proposed
A kind of method in energy quick detection chip crater.
Summary of the invention
The invention aims to solve shortcoming present in prior art, and the one proposed can quick detection chip
The method in crater.
The method in a kind of energy quick detection chip crater, comprises the following steps:
S1, preparation: chip product, cutter, 100ML beaker A, 100ML beaker B, heating platform, metal pincet, stirring rod,
High power microscope, sodium hydroxide, acetone, water;
S2, the sodium hydroxide calculating use required for weighing by the concentration of 25-35% percentage by weight and water;
S3, the water weighed in step S2 is poured in 100ML beaker A, be slowly added to the sodium hydroxide weighed in step S2, use glass
Glass rod is gently mixed 8-15min, until being completely dissolved in water white transparency shape;
S4, the sodium hydroxide solution prepared is put into heating platform it is heated to 80-110 DEG C in step S3, be incubated standby;
S5, use cutter diced chip product, put down the chip product metal pincet of cutting gently hydrogen into keeping warm mode
In sodium hydroxide solution, heat 3-5min;
S6, a certain amount of acetone is poured in 100ML beaker beaker B, step S5 will be taken out chip product after heating, and put into
100ML beaker B cleans and dries;
S7, under high power microscope, observe chip product situation, be normally without breakage, crack, pit or rainbow phenomena.
Preferably, the water in described step S1 is pure water.
Preferably, the weight percent concentration in described step S2 is 28-32%.
Preferably, the heating-up temperature in described step S4 is 85-100 DEG C.
Preferably, the heat time heating time in described step S5 is 4min.
Preferably, the ratio of the amounts of acetone in described step S6 and pure water amount is 1-1.4:1.
The method in a kind of energy quick detection chip crater that the present invention proposes, simple to operate, used in the process of equipment and molten
Liquid is reusable, effectively raises the utilization rate of equipment and solution, reduces cost, and the method that the present invention proposes can be quickly
Detection crater, the shortest, the shortest, carry out solution preparation, heat after, crater detect the time typically can be controlled in 5 points
Within clock, effectively raise work efficiency, and ensure that product quality.
Detailed description of the invention
Below in conjunction with specific embodiment, the present invention is explained orally further.
Embodiment one
The method in a kind of energy quick detection chip crater that the present invention proposes, comprises the following steps:
S1, preparation: chip product, cutter, 100ML beaker A, 100ML beaker B, heating platform, metal pincet, stirring rod,
High power microscope, sodium hydroxide, acetone, pure water;
S2, the sodium hydroxide calculating use required for weighing by the concentration of 28% percentage by weight and pure water;
S3, the pure water weighed in step S2 is poured in 100ML beaker, be slowly added to the sodium hydroxide weighed in step S2, use
Glass rod is gently mixed 15min, until being completely dissolved in water white transparency shape;
S4, the sodium hydroxide solution prepared is put into heating platform it is heated to 90 DEG C in step S3, be incubated standby;
S5, use cutter diced chip product, put down the chip product metal pincet of cutting gently hydrogen into keeping warm mode
In sodium hydroxide solution, heat 4min;
S6, the acetone that consumption is equal with pure water consumption is poured in 100ml beaker B, will chip product after heating in step S5
Take out, put into and 100ML beaker B cleans and dries;
S7, under high power microscope, observe chip product situation, be normally without breakage, crack, pit or rainbow phenomena.
Embodiment two
The method in a kind of energy quick detection chip crater that the present invention proposes, comprises the following steps:
S1, preparation: chip product, cutter, 100ML beaker A, 100ML beaker B, heating platform, metal pincet, stirring rod,
High power microscope, sodium hydroxide, acetone, pure water;
S2, the sodium hydroxide calculating use required for weighing by the concentration of 32% percentage by weight and pure water;
S3, the pure water weighed in step S2 is poured in 100ML beaker, be slowly added to the sodium hydroxide weighed in step S2, use
Glass rod is gently mixed 10min, until being completely dissolved in water white transparency shape;
S4, the sodium hydroxide solution prepared is put into heating platform it is heated to 100 DEG C in step S3, be incubated standby;
S5, use cutter diced chip product, put down the chip product metal pincet of cutting gently hydrogen into keeping warm mode
In sodium hydroxide solution, heat 3min;
S6, it is that the acetone of pure water consumption 1.3 times is poured in 100ml beaker B by consumption, will chip product after heating in step S5
Take out, put into and 100ML beaker B cleans and dries;
S7, under high power microscope, observe chip product situation, be normally without breakage, crack, pit or rainbow phenomena.
Embodiment three
The method in a kind of energy quick detection chip crater that the present invention proposes, comprises the following steps:
S1, preparation: chip product, cutter, 100ML beaker A, 100ML beaker B, heating platform, metal pincet, stirring rod,
High power microscope, sodium hydroxide, acetone, pure water;
S2, the sodium hydroxide calculating use required for weighing by the concentration of 25% percentage by weight and pure water;
S3, the pure water weighed in step S2 is poured in 100ML beaker, be slowly added to the sodium hydroxide weighed in step S2, use
Glass rod is gently mixed 9min, until being completely dissolved in water white transparency shape;
S4, the sodium hydroxide solution prepared is put into heating platform it is heated to 85 DEG C in step S3, be incubated standby;
S5, use cutter diced chip product, put down the chip product metal pincet of cutting gently hydrogen into keeping warm mode
In sodium hydroxide solution, heat 3.5min;
S6, it is that the acetone of pure water consumption 1.1 times is poured in 100ml beaker B by consumption, will chip product after heating in step S5
Take out, put into and 100ML beaker B cleans and dries;
S7, under high power microscope, observe chip product situation, be normally without breakage, crack, pit or rainbow phenomena.
Embodiment four
The method in a kind of energy quick detection chip crater that the present invention proposes, comprises the following steps:
S1, preparation: chip product, cutter, 100ML beaker A, 100ML beaker B, heating platform, metal pincet, stirring rod,
High power microscope, sodium hydroxide, acetone, pure water;
S2, the sodium hydroxide calculating use required for weighing by the concentration of 30% percentage by weight and pure water;
S3, the pure water weighed in step S2 is poured in 100ML beaker, be slowly added to the sodium hydroxide weighed in step S2, use
Glass rod is gently mixed 14min, until being completely dissolved in water white transparency shape;
S4, the sodium hydroxide solution prepared is put into heating platform it is heated to 95 DEG C in step S3, be incubated standby;
S5, use cutter diced chip product, put down the chip product metal pincet of cutting gently hydrogen into keeping warm mode
In sodium hydroxide solution, heat 5min;
S6, it is that the acetone of pure water consumption 1.4 times is poured in 100ml beaker B by consumption, will chip product after heating in step S5
Take out, put into and 100ML beaker B cleans and dries;
S7, under high power microscope, observe chip product situation, be normally without breakage, crack, pit or rainbow phenomena.
Embodiment five
The method in a kind of energy quick detection chip crater that the present invention proposes, comprises the following steps:
S1, preparation: chip product, cutter, 100ML beaker A, 100ML beaker B, heating platform, metal pincet, stirring rod,
High power microscope, sodium hydroxide, acetone, pure water;
S2, the sodium hydroxide calculating use required for weighing by the concentration of 35% percentage by weight and pure water;
S3, the pure water weighed in step S2 is poured in 100ML beaker, be slowly added to the sodium hydroxide weighed in step S2, use
Glass rod is gently mixed 12min, until being completely dissolved in water white transparency shape;
S4, the sodium hydroxide solution prepared is put into heating platform it is heated to 105 DEG C in step S3, be incubated standby;
S5, use cutter diced chip product, put down the chip product metal pincet of cutting gently hydrogen into keeping warm mode
In sodium hydroxide solution, heat 4.5min;
S6, it is that the acetone of pure water consumption 1.2 times is poured in 100ml beaker B by consumption, will chip product after heating in step S5
Take out, put into and 100ML beaker B cleans and dries;
S7, under high power microscope, observe chip product situation, be normally without breakage, crack, pit or rainbow phenomena.
In the crater detection method propose above-mentioned five groups of embodiments, the crater used detection time is added up, and draws following
Result:
Embodiment | Embodiment one | Embodiment two | Embodiment three | Embodiment four | Embodiment five |
The detection time | 3.8min | 3.2min | 3.5min | 4.7min | 4.5min |
The method in a kind of energy quick detection chip crater that the present invention proposes, simple to operate, used in the process of equipment and solution can
Reusing, effectively raise the utilization rate of equipment and solution, reduce cost, the method that the present invention proposes can quickly be examined
Surveying crater, the shortest, after carrying out solution preparation, heat, crater is detected within the time typically can be controlled in 5 minutes, effectively
Improve work efficiency, and ensure that product quality.
The above, the only present invention preferably detailed description of the invention, but protection scope of the present invention is not limited thereto,
Any those familiar with the art in the technical scope that the invention discloses, according to technical scheme and
Inventive concept equivalent or change in addition, all should contain within protection scope of the present invention.
Claims (6)
1. the method in an energy quick detection chip crater, it is characterised in that comprise the following steps:
S1, preparation: chip product, cutter, 100ML beaker A, 100ML beaker B, heating platform, metal pincet, stirring rod,
High power microscope, sodium hydroxide, acetone, water;
S2, the sodium hydroxide calculating use required for weighing by the concentration of 25-35% percentage by weight and water;
S3, the water weighed in step S2 is poured in 100ML beaker A, be slowly added to the sodium hydroxide weighed in step S2, use glass
Glass rod is gently mixed 8-15min, until being completely dissolved in water white transparency shape;
S4, the sodium hydroxide solution prepared is put into heating platform it is heated to 80-110 DEG C in step S3, be incubated standby;
S5, use cutter diced chip product, put down the chip product metal pincet of cutting gently hydrogen into keeping warm mode
In sodium hydroxide solution, heat 3-5min;
S6, a certain amount of acetone is poured in 100ml beaker B, step S5 will be taken out chip product after heating, and put into
100ML beaker B cleans and dries;
S7, under high power microscope, observe chip product situation, be normally without breakage, crack, pit or rainbow phenomena.
The method in a kind of energy the most according to claim 1 quick detection chip crater, it is characterised in that in described step S1
Water be pure water.
The method in a kind of energy the most according to claim 1 quick detection chip crater, it is characterised in that in described step S2
Weight percent concentration be 28-32%.
The method in a kind of energy the most according to claim 1 quick detection chip crater, it is characterised in that in described step S4
Heating-up temperature be 85-100 DEG C.
The method in a kind of energy the most according to claim 1 quick detection chip crater, it is characterised in that in described step S5
Heat time heating time be 4min.
The method in a kind of energy the most according to claim 1 quick detection chip crater, it is characterised in that in described step S6
Amounts of acetone and the ratio of pure water amount be 1-1.4:1.
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CN201610672356.9A CN106158690A (en) | 2016-08-16 | 2016-08-16 | A kind of method in energy quick detection chip crater |
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CN201610672356.9A CN106158690A (en) | 2016-08-16 | 2016-08-16 | A kind of method in energy quick detection chip crater |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107799399A (en) * | 2017-10-31 | 2018-03-13 | 浙江华越芯装电子股份有限公司 | The preprocess method that crater is detected under medium temperature |
CN107978538A (en) * | 2017-12-01 | 2018-05-01 | 泰州海天电子科技股份有限公司 | A kind of method for judging transistor bonding crater |
CN111273158A (en) * | 2020-02-26 | 2020-06-12 | 上海韦尔半导体股份有限公司 | Testing method and device for checking craters and intelligent routing equipment |
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CN102637613A (en) * | 2012-05-09 | 2012-08-15 | 四川立泰电子有限公司 | Realization method for lead bonding thick aluminum wire |
CN104390911A (en) * | 2014-10-31 | 2015-03-04 | 山东华芯半导体有限公司 | Method for detecting welding strength of chip bonding wire |
CN104599997A (en) * | 2015-01-30 | 2015-05-06 | 工业和信息化部电子第五研究所 | Unpacking method of plastic-packed metal wire bonding device |
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2016
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102637613A (en) * | 2012-05-09 | 2012-08-15 | 四川立泰电子有限公司 | Realization method for lead bonding thick aluminum wire |
CN104390911A (en) * | 2014-10-31 | 2015-03-04 | 山东华芯半导体有限公司 | Method for detecting welding strength of chip bonding wire |
CN104599997A (en) * | 2015-01-30 | 2015-05-06 | 工业和信息化部电子第五研究所 | Unpacking method of plastic-packed metal wire bonding device |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107799399A (en) * | 2017-10-31 | 2018-03-13 | 浙江华越芯装电子股份有限公司 | The preprocess method that crater is detected under medium temperature |
CN107799399B (en) * | 2017-10-31 | 2020-01-03 | 浙江华越芯装电子股份有限公司 | Pretreatment method for crater detection at medium temperature |
CN107978538A (en) * | 2017-12-01 | 2018-05-01 | 泰州海天电子科技股份有限公司 | A kind of method for judging transistor bonding crater |
CN111273158A (en) * | 2020-02-26 | 2020-06-12 | 上海韦尔半导体股份有限公司 | Testing method and device for checking craters and intelligent routing equipment |
CN111273158B (en) * | 2020-02-26 | 2022-04-15 | 上海韦尔半导体股份有限公司 | Testing method and device for checking craters and intelligent routing equipment |
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Application publication date: 20161123 |