CN102428540A - 用于对硅片进行掺硼的方法 - Google Patents
用于对硅片进行掺硼的方法 Download PDFInfo
- Publication number
- CN102428540A CN102428540A CN2010800193625A CN201080019362A CN102428540A CN 102428540 A CN102428540 A CN 102428540A CN 2010800193625 A CN2010800193625 A CN 2010800193625A CN 201080019362 A CN201080019362 A CN 201080019362A CN 102428540 A CN102428540 A CN 102428540A
- Authority
- CN
- China
- Prior art keywords
- chamber
- boron
- gas
- silicon chip
- technology
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 105
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 97
- 239000010703 silicon Substances 0.000 title claims abstract description 96
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title abstract description 21
- 235000012431 wafers Nutrition 0.000 title abstract 3
- 239000007789 gas Substances 0.000 claims abstract description 75
- 239000012159 carrier gas Substances 0.000 claims abstract description 38
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims abstract description 14
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000005516 engineering process Methods 0.000 claims description 58
- 238000012545 processing Methods 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 239000001257 hydrogen Substances 0.000 claims description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000000605 extraction Methods 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 230000001105 regulatory effect Effects 0.000 claims description 7
- 238000005259 measurement Methods 0.000 claims description 6
- 229910052810 boron oxide Inorganic materials 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000009466 transformation Effects 0.000 claims description 3
- 238000009736 wetting Methods 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 230000004907 flux Effects 0.000 claims description 2
- 239000002243 precursor Substances 0.000 abstract description 9
- 229910015844 BCl3 Inorganic materials 0.000 abstract 1
- 239000003153 chemical reaction reagent Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 8
- 238000002156 mixing Methods 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000002349 favourable effect Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229920002313 fluoropolymer Polymers 0.000 description 3
- 239000004811 fluoropolymer Substances 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical class CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002611 lead compounds Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 238000007086 side reaction Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 244000287680 Garcinia dulcis Species 0.000 description 1
- 229920001774 Perfluoroether Polymers 0.000 description 1
- NCWPZAVGKXDSFU-UHFFFAOYSA-N [O].B(Cl)(Cl)Cl Chemical compound [O].B(Cl)(Cl)Cl NCWPZAVGKXDSFU-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- UOALEFQKAOQICC-UHFFFAOYSA-N chloroborane Chemical class ClB UOALEFQKAOQICC-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical compound FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR09/01708 | 2009-04-06 | ||
FR0901708A FR2944138B1 (fr) | 2009-04-06 | 2009-04-06 | Procede de dopage au bore de plaquettes de silicium |
PCT/EP2010/054487 WO2010115862A1 (fr) | 2009-04-06 | 2010-04-06 | Procede de dopage au bore de plaquettes de silicium. |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102428540A true CN102428540A (zh) | 2012-04-25 |
CN102428540B CN102428540B (zh) | 2017-02-08 |
Family
ID=41404593
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080019362.5A Active CN102428540B (zh) | 2009-04-06 | 2010-04-06 | 用于对硅片进行掺硼的方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8691677B2 (zh) |
EP (1) | EP2417621B1 (zh) |
JP (1) | JP2012523127A (zh) |
KR (2) | KR101897191B1 (zh) |
CN (1) | CN102428540B (zh) |
FR (1) | FR2944138B1 (zh) |
SG (1) | SG175185A1 (zh) |
WO (1) | WO2010115862A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102797040A (zh) * | 2012-08-22 | 2012-11-28 | 中国科学院电工研究所 | 一种硼(b)扩散掺杂的方法 |
CN107690693A (zh) * | 2015-06-09 | 2018-02-13 | 国际太阳能研究中心康斯坦茨协会 | 掺杂硅晶片的方法 |
CN109545893A (zh) * | 2018-11-16 | 2019-03-29 | 深圳市拉普拉斯能源技术有限公司 | 一种n型太阳能电池多步硼扩散工艺 |
CN116288091A (zh) * | 2023-03-28 | 2023-06-23 | 南昌大学 | 一种低温制备超细晶粒钽片的退火工艺 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102031174B1 (ko) | 2012-11-16 | 2019-10-11 | 삼성전자주식회사 | 반도체 소자, 반도체 소자의 제조 방법 및 기판 가공 장치 |
DE102013208799A1 (de) * | 2013-05-14 | 2014-11-20 | Heraeus Quarzglas Gmbh & Co. Kg | SiO2-basierte Sperrschicht für Hochtemperatur-Diffusions- und Beschichtungsprozesse |
CN104393107B (zh) * | 2014-10-27 | 2016-08-17 | 中国电子科技集团公司第四十八研究所 | 一种高方阻晶体硅电池低压扩散工艺 |
KR102400911B1 (ko) * | 2016-06-13 | 2022-05-20 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 태양전지, 태양전지의 제조 방법 및 태양전지의 제조 시스템 |
US11961739B2 (en) * | 2020-10-05 | 2024-04-16 | Applied Materials, Inc. | Boron concentration tunability in boron-silicon films |
DE102020133390A1 (de) | 2020-12-14 | 2022-06-15 | Hanwha Q Cells Gmbh | Verfahren zur Herstellung eines Bor-Emitters auf einem Silizium-Wafer |
CN113604791B (zh) * | 2021-06-16 | 2023-10-10 | 拉普拉斯新能源科技股份有限公司 | 一种基于BCl3气体的LPCVD硼掺杂非晶硅水平镀膜方法及应用 |
KR102635522B1 (ko) * | 2021-10-19 | 2024-02-08 | (주)한화 | 웨이퍼 소스 도핑 시스템 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3574009A (en) * | 1968-03-06 | 1971-04-06 | Unitrode Corp | Controlled doping of semiconductors |
US4381213A (en) * | 1980-12-15 | 1983-04-26 | Motorola, Inc. | Partial vacuum boron diffusion process |
JPS605511A (ja) * | 1983-06-24 | 1985-01-12 | Toshiba Corp | 半導体用拡散装置 |
US5208185A (en) * | 1991-03-20 | 1993-05-04 | Shin-Etsu Handotai Co., Ltd. | Process for diffusing boron into semiconductor wafers |
JP2001313265A (ja) * | 2000-04-28 | 2001-11-09 | Sharp Corp | 半導体装置の製造方法 |
CN1528007A (zh) * | 2001-05-14 | 2004-09-08 | ��ķ�ƹ��̹ɷ�����˾ | 在减低压力的情况下掺杂、扩散及氧化硅片的方法和装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0204182B1 (de) * | 1985-05-22 | 1991-06-05 | Siemens Aktiengesellschaft | Verfahren zum Herstellen von mit Bor und Phosphor dotierten Siliziumoxid-Schichten für integrierte Halbleiterschaltungen |
JPH0364912A (ja) * | 1989-08-03 | 1991-03-20 | Nissan Motor Co Ltd | 水素燃焼酸化拡散炉 |
JP2928930B2 (ja) * | 1989-12-06 | 1999-08-03 | セイコーインスツルメンツ株式会社 | 不純物ドーピング装置 |
US5268062A (en) * | 1990-03-05 | 1993-12-07 | Northrop Corporation | Method and apparatus for carbon coating and boron-doped carbon coating a porous refractory substrate |
JPH05152236A (ja) * | 1991-12-02 | 1993-06-18 | Matsushita Electron Corp | 半導体装置の製造方法 |
US5256595A (en) | 1993-02-19 | 1993-10-26 | The United States Of America As Represented By The Secretary Of The Army. | Method of growing device quality InP onto an InP substrate using an organometallic precursor in a hot wall reactor |
-
2009
- 2009-04-06 FR FR0901708A patent/FR2944138B1/fr not_active Expired - Fee Related
-
2010
- 2010-04-06 EP EP10715519.4A patent/EP2417621B1/fr active Active
- 2010-04-06 CN CN201080019362.5A patent/CN102428540B/zh active Active
- 2010-04-06 US US13/262,993 patent/US8691677B2/en active Active
- 2010-04-06 JP JP2012503989A patent/JP2012523127A/ja active Pending
- 2010-04-06 KR KR1020167028464A patent/KR101897191B1/ko active IP Right Grant
- 2010-04-06 KR KR1020117024974A patent/KR20120047844A/ko active Search and Examination
- 2010-04-06 WO PCT/EP2010/054487 patent/WO2010115862A1/fr active Application Filing
- 2010-04-06 SG SG2011074291A patent/SG175185A1/en unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US3574009A (en) * | 1968-03-06 | 1971-04-06 | Unitrode Corp | Controlled doping of semiconductors |
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CN1528007A (zh) * | 2001-05-14 | 2004-09-08 | ��ķ�ƹ��̹ɷ�����˾ | 在减低压力的情况下掺杂、扩散及氧化硅片的方法和装置 |
Cited By (6)
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CN102797040A (zh) * | 2012-08-22 | 2012-11-28 | 中国科学院电工研究所 | 一种硼(b)扩散掺杂的方法 |
CN102797040B (zh) * | 2012-08-22 | 2015-08-12 | 中国科学院电工研究所 | 一种硼(b)扩散掺杂的方法 |
CN107690693A (zh) * | 2015-06-09 | 2018-02-13 | 国际太阳能研究中心康斯坦茨协会 | 掺杂硅晶片的方法 |
CN107690693B (zh) * | 2015-06-09 | 2022-01-07 | 国际太阳能研究中心康斯坦茨协会 | 掺杂硅晶片的方法 |
CN109545893A (zh) * | 2018-11-16 | 2019-03-29 | 深圳市拉普拉斯能源技术有限公司 | 一种n型太阳能电池多步硼扩散工艺 |
CN116288091A (zh) * | 2023-03-28 | 2023-06-23 | 南昌大学 | 一种低温制备超细晶粒钽片的退火工艺 |
Also Published As
Publication number | Publication date |
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KR101897191B1 (ko) | 2018-09-11 |
US20120083105A1 (en) | 2012-04-05 |
JP2012523127A (ja) | 2012-09-27 |
CN102428540B (zh) | 2017-02-08 |
EP2417621B1 (fr) | 2018-12-19 |
WO2010115862A1 (fr) | 2010-10-14 |
SG175185A1 (en) | 2011-12-29 |
EP2417621A1 (fr) | 2012-02-15 |
FR2944138A1 (fr) | 2010-10-08 |
KR20120047844A (ko) | 2012-05-14 |
FR2944138B1 (fr) | 2012-12-07 |
KR20160122860A (ko) | 2016-10-24 |
US8691677B2 (en) | 2014-04-08 |
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